WO2011125839A1 - Composition permettant de former un film de sous-couche de réserve et procédé de formation de motif - Google Patents

Composition permettant de former un film de sous-couche de réserve et procédé de formation de motif Download PDF

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Publication number
WO2011125839A1
WO2011125839A1 PCT/JP2011/058221 JP2011058221W WO2011125839A1 WO 2011125839 A1 WO2011125839 A1 WO 2011125839A1 JP 2011058221 W JP2011058221 W JP 2011058221W WO 2011125839 A1 WO2011125839 A1 WO 2011125839A1
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Prior art keywords
group
general formula
resist
underlayer film
resist underlayer
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PCT/JP2011/058221
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English (en)
Japanese (ja)
Inventor
慎也 中藤
信也 峯岸
和彦 香村
孝徳 中野
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Jsr株式会社
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Priority to JP2012509572A priority Critical patent/JP5794228B2/ja
Publication of WO2011125839A1 publication Critical patent/WO2011125839A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds

Definitions

  • the present invention relates to a resist underlayer film forming composition and a pattern forming method. More specifically, the present invention relates to a resist underlayer film forming composition and a pattern forming method capable of forming a resist underlayer film having high elastic modulus and high etching resistance while maintaining a standing wave preventing effect.
  • a liquid resist underlayer film forming composition is first applied on a substrate to form a resist underlayer film (hereinafter sometimes simply referred to as “underlayer film”), and then a liquid is formed on the underlayer film.
  • the photoresist composition is further applied to form a photoresist film (resist film).
  • the photoresist film is exposed using a reduction projection exposure apparatus (stepper) and then developed to obtain a photoresist pattern. Thereafter, the photoresist pattern is transferred to the resist underlayer film by dry etching.
  • a substrate on which a desired pattern is formed can be obtained.
  • the case where one kind of resist underlayer film is used is called a two-layer resist process, and the case where two kinds of resist underlayer films are used is sometimes called a three-layer resist process.
  • the resist underlayer film generally has a function as an antireflection film that absorbs radiation reflected from the substrate.
  • the resist underlayer film formed immediately above the substrate is often formed of a material having a high carbon content (composition for forming a resist underlayer film). This is because if the carbon content is high, the etching resistance during substrate processing is improved, and more accurate pattern transfer is possible.
  • a composition for forming a resist underlayer film having a high carbon content those containing a thermosetting phenol novolak and those containing a polymer having an acenaphthylene skeleton are known (see, for example, Patent Documents 1 and 2). ).
  • compositions for forming a resist underlayer film a composition containing a photopolymerizable compound is known instead of a composition containing a resin such as thermosetting phenol novolak (see, for example, Patent Document 3).
  • the resist underlayer film forming compositions described in Patent Documents 1 and 2 have problems such as bending of the underlayer film pattern when the pattern is transferred from the resist underlayer film to the substrate by etching, and the pattern is satisfactorily applied to the substrate. There was a problem that it was impossible to transfer. Particularly, since the miniaturization of integrated circuit elements has recently been advanced, problems such as bending of a lower layer film pattern caused by heat have become a problem. Here, the cause of the bending of the lower layer film pattern is considered to be that the elastic modulus of the resist lower layer film is insufficient because the resins are not sufficiently crosslinked.
  • the resist underlayer film forming composition described in Patent Document 3 contains a photopolymerizable compound, but is intended to obtain a material having low etching resistance. What is the resist underlayer film of the present invention? Disclose materials for different applications.
  • the present invention has been made to solve the above-described problems of the prior art, and is capable of forming a resist underlayer film having a high elastic modulus and high etching resistance while maintaining a standing wave prevention effect. It aims at providing the composition for lower layer film formation, and the pattern formation method.
  • the present invention provides the following resist underlayer film forming composition and pattern forming method.
  • B a resist underlayer film forming composition containing a solvent.
  • R 11 to R 13 are each independently a monovalent group derived from an aromatic compound, a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkyl group having 3 to 20 carbon atoms.
  • cycloalkyl group, a nitro group, a cyano group, -COR 2 shows a -COOR 2 or -CON (R 2) 2 (where, -COR 2, -COOR 2, and -CON (R 2) in 2, R 2
  • R 2 Each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or a monovalent organic group derived from an aromatic compound, and having a substituent.
  • any one of R 11 to R 13 is a monovalent group derived from an aromatic compound, a nitro group, a cyano group, —COR 2 , —COOR 2 or —CON (R 2 ) is a 2 .
  • R 3 may have a substituent, .n1 showing the n1 valent organic radical derived from aromatic compounds is an integer of 2-4.
  • R 4 is independently of each other a monovalent organic group derived from an aromatic compound, a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a cycloalkyl having 3 to 20 carbon atoms.
  • R 7 are mutually And independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or a monovalent organic group derived from an aromatic compound, and may have a substituent.
  • R 5 represents a monovalent organic group derived from an aromatic compound which may have a substituent
  • R 6 represents an n2-valent organic group
  • X represents —COO—. * or -CONH- * the show ( "*" represents a bond that binds to R 6). 2 is an integer of 2-10.
  • the photopolymerizable compound represented by the general formula (1) is a compound represented by the following general formula (1-1), and the photopolymerizable compound represented by the general formula (2) is The composition for forming a resist underlayer film according to the above [1], which is a compound represented by the following general formula (2-1).
  • R 1 independently represents a hydrogen atom or a cyano group.
  • R 2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, 3 to 20 cycloalkyl groups, or monovalent organic groups derived from aromatic compounds, which may have a substituent, R 3 may have a substituent, an aromatic group An n1-valent organic group derived from a compound, where n1 is an integer of 2 to 4.
  • R 41 independently represents a hydrogen atom or a cyano group
  • R 6 represents an n2 valent hydrocarbon group
  • n2 represents an integer of 2 to 10.
  • R P is .n p indicating a substituent is an integer of 0-5.
  • R 1 independently represents a hydrogen atom or a cyano group.
  • R 2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, 3 to 20 cycloalkyl groups or monovalent organic groups derived from aromatic compounds, which may have a substituent, n1 represents an integer of 2 to 4.
  • R 1 independently represents a hydrogen atom or a cyano group.
  • R 2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, 3 to 20 cycloalkyl groups or a monovalent organic group derived from an aromatic compound, which may have a substituent
  • the resist underlayer film forming composition of the present invention is at least one selected from the group consisting of a photopolymerizable compound represented by the general formula (1) and a photopolymerizable compound represented by the general formula (2). Since it contains a photopolymerizable compound, when irradiated with light, the cross-linking structure formed by the polymerization reaction of these compounds becomes strong, and the elastic modulus is maintained while maintaining the standing wave prevention effect. In addition, a resist underlayer film having high etching resistance can be formed.
  • a resist underlayer film forming composition is applied on a substrate to be processed to form a coating film, and the formed coating film is irradiated with radiation to be applied.
  • the “substituent” is not particularly limited.
  • R S1 independently represents an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or an aryl group having 6 to 30 carbon atoms, and one of hydrogen atoms contained in these groups. Part or all may be substituted with a fluorine atom.
  • R S2 is independently of each other a single bond, an alkanediyl group having 1 to 10 carbon atoms, a cycloalkanediyl group having 3 to 20 carbon atoms, an arylene group having 6 to 30 carbon atoms, or hydrogen contained in these groups A group in which some or all of the atoms are substituted with fluorine atoms.
  • “having a substituent” means having one or more of the above substituents alone, or having one or more of each of the above substituents.
  • composition for forming a resist underlayer film is selected from the group consisting of (A) a photopolymerizable compound represented by the general formula (1) and a photopolymerizable compound represented by the general formula (2). Containing at least one photopolymerizable compound and (B) a solvent. Since this resist underlayer film forming composition contains the photopolymerizable compound (A), when the compound is irradiated with light, the cross-linked structure formed by the polymerization reaction of these compounds is strong. Thus, the elastic modulus and etching resistance are high while maintaining the standing wave preventing effect. Therefore, according to such a composition for forming a resist underlayer film, it is possible to form a resist underlayer film that hardly causes pattern bending.
  • (A) Photopolymerizable compound In the photopolymerizable compound represented by the general formula (1) and the photopolymerizable compound represented by the general formula (2), the carbon-carbon double bond is converted to another carbon- by irradiation with light. It is a compound that undergoes recombination of carbon double bond and bond to form a cyclobutane ring. That is, by containing the (A) photopolymerizable compound, in the resist underlayer film (in the coating film formed by the resist underlayer film forming composition of the present invention), (A) two photopolymerizable compounds are contained. It is strongly cross-linked by a carbon-carbon bond to form a cross-linked structure.
  • a hard resist underlayer film can be formed by using such a compound ((A) photopolymerizable compound).
  • the conventional resist underlayer forming composition forms a crosslinked structure in the resist underlayer film by using a crosslinking agent or the like, but since this crosslinked structure is due to a single bond, the strength of the bond is low. Not enough (bonding strength was not enough). Therefore, the pattern may be bent during etching (so-called pattern bending may occur).
  • the cross-linked structure formed by the photopolymerizable compound (A) has a stronger bonding force than that of a single bond, it is considered that a hard resist underlayer film is obtained and the pattern does not bend during etching.
  • the monovalent group derived from an aromatic compound represented by R 11 to R 13 is a group obtained by removing one hydrogen atom from an aromatic hydrocarbon having 6 to 10 carbon atoms.
  • the aromatic hydrocarbon include aromatic hydrocarbons such as benzene and naphthalene; nitrogen-containing aromatic hydrocarbons such as pyrrole, pyridine, pyrazine, pyrimidine, pyridazine, triazine and indole; and oxygen-containing aromatic carbons such as furan.
  • Hydrogen Sulfur-containing aromatic hydrocarbons such as thiophene.
  • a group derived from benzene, naphthalene, and pyridine is preferable because of high etching resistance.
  • the monovalent group derived from the aromatic compound may have a substituent.
  • the alkyl group having 1 to 10 carbon atoms represented by R 11 to R 13 is methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n- Linear alkyl groups such as hexyl group, n-octyl group, n-dodecyl group, n-tetradecyl group and n-octadecyl group, branching such as isopropyl group, isobutyl group, t-butyl group, neopentyl group and 2-ethylhexyl group
  • An alkyl group can be mentioned. Among these, a methyl group, an ethyl group, an i-propyl group, and an i-butyl group are preferable.
  • the alkyl group may have a substituent.
  • the cycloalkyl group having 3 to 20 carbon atoms represented by R 11 to R 13 is a monocyclic cycloalkyl group such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, or a cyclooctyl group.
  • An alkyl group; and a polycyclic cycloalkyl group such as a tricyclodecanyl group, a tetracyclododecyl group, a norbornyl group, and an adamantyl group.
  • the cycloalkyl group may have a substituent.
  • R 2 is preferably in the -COOR 2, -CON (R 2) 2, as described above, independently of one another, a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, cycloalkyl of 3 to 20 carbon atoms An alkyl group or a monovalent organic group derived from an aromatic compound.
  • a hydrogen atom, a methyl group, an ethyl group, an i-propyl group, an i-butyl group, a phenyl group, and a pyridyl group are preferable.
  • examples of the group represented by “—CR 11 ⁇ CR 12 R 13 ” include groups represented by the following general formulas (a) to (n).
  • R 21 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a cycloalkyl group having 3 to 20 carbon atoms.
  • R 14 represents a monovalent group derived from an aromatic compound which may have a substituent.
  • R 2 is each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or a monovalent organic group derived from an aromatic compound.
  • a wavy line indicates that the direction of coupling is unspecified.
  • R 14 is a monovalent group derived from an aromatic compound similar to the monovalent group represented by R 11 to R 13 derived from an aromatic compound.
  • the monovalent group derived from this aromatic compound may have a substituent.
  • groups derived from benzene, naphthalene, and pyridine are preferable because a resist underlayer film having high etching resistance can be formed.
  • Examples thereof are the same as 10 alkyl groups or cycloalkyl groups having 3 to 20 carbon atoms.
  • a group represented by the following general formula (a-1) is preferable from the viewpoint of easy availability of raw materials.
  • R 1 represents a hydrogen atom or a cyano group.
  • R 2 independently of each other represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a cyclohexane having 3 to 20 carbon atoms. (It is a monovalent organic group derived from an alkyl group or an aromatic compound.)
  • the n1-valent organic group derived from the aromatic compound represented by R 3 includes a group obtained by removing (n1) hydrogen atoms from an aromatic hydrocarbon having 6 to 10 carbon atoms.
  • the aromatic hydrocarbon include aromatic hydrocarbons such as benzene and naphthalene; nitrogen-containing aromatic hydrocarbons such as pyrrole, pyridine, pyrazine, pyrimidine, pyridazine, triazine and indole; and oxygen-containing aromatic carbons such as furan.
  • Hydrogen Sulfur-containing aromatic hydrocarbons such as thiophene.
  • R 3 may have a substituent.
  • n1 is preferably 2 or 3, and more preferably 2.
  • the compound represented by the general formula (1-11) is a compound in the case where R 3 is a benzene-derived divalent group in the general formula (1-1).
  • the compound represented by the general formula (1-111) is a compound in the case where n1 is 2 in the general formula (1-11).
  • photopolymerizable compound represented by the general formula (1) include the following compounds.
  • photopolymerizable compound represented by the general formula (1-111) include the following compounds.
  • the following compounds are preferred because crosslinking proceeds easily (a crosslinked structure is formed) and the crosslinking density is increased by light irradiation.
  • the photopolymerizable compound represented by the general formula (1) can be obtained, for example, by condensing an aromatic ring having a plurality of formyl groups and cyanoacetic acid esters in the presence of a base.
  • the monovalent organic group derived from the aromatic compound represented by R 5 includes a monovalent group represented by R 11 to R 13 and derived from the aromatic compound.
  • a monovalent group derived from the same aromatic compound can be exemplified, and the monovalent group derived from this aromatic compound may have a substituent.
  • a group derived from benzene and pyridine is preferable because of high etching resistance.
  • a monovalent organic group derived from an aromatic compound represented by R 4 , an alkyl group having 1 to 10 carbon atoms, and a cycloalkyl group having 3 to 20 carbon atoms are A monovalent group derived from an aromatic compound represented by R 11 to R 13 in the general formula (1), an alkyl group having 1 to 10 carbon atoms, and a cycloalkyl group having 3 to 20 carbon atoms; The same thing can be illustrated.
  • examples of the group represented by “—X—CR 4 ⁇ CR 4 R 5 ” include groups represented by the following general formulas (o) to (z). .
  • R 21 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a cycloalkyl group having 3 to 20 carbon atoms.
  • R 5 represents a monovalent organic group derived from an aromatic compound which may have a substituent.
  • R 8 independently of one another represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or a monovalent organic group derived from an aromatic compound, You may have.
  • a wavy line indicates that the direction of coupling is unspecified.
  • a group represented by the following general formula (o-1) is preferable from the viewpoint of easy availability of raw materials.
  • R 41 represents a hydrogen atom or a cyano group.
  • R p represents a substituent.
  • N p represents an integer of 0 to 5.
  • examples of the n2-valent organic group represented by R 6 include n2-valent hydrocarbon groups.
  • examples of such hydrocarbon groups include methane, ethane, n-propyl group, n-butane, n-pentane, n-hexane, n-octane, n-dodecane, n-tetradecane, and n-octadecane.
  • Chain alkanes Chain hydrocarbons such as branched alkanes such as isopropane, isobutane, t-butane, neopentane, 2-ethylhexane, etc., monocyclic cyclohexane such as cyclopropane, cyclobutane, cyclopentane, cyclohexyl group, cyclooctane, etc.
  • An alkane; a group in which n2 hydrogen atoms are removed from a cyclic hydrocarbon such as polycyclocycloalkane such as tricyclodecane, tetracyclododecane, norbornene, adamantane and the like.
  • N2 in the general formula (2) is preferably 2 to 8, and particularly preferably 2 to 6.
  • photopolymerizable compound represented by the general formula (2) include compounds represented by the following formulas (B-1) to (B-5). Among these, a compound represented by the formula (B-5) is preferable because a resist underlayer film having high etching resistance can be formed.
  • the photopolymerizable compound represented by the general formula (2) can be obtained, for example, by reacting cinnamic acid with a carbon source (for example, dimethylformamide or alkyl bromide) in the presence of a base.
  • a carbon source for example, dimethylformamide or alkyl bromide
  • the composition for resist underlayer film formation of this invention is the photopolymerizable compound represented by the said General formula (1), and the photopolymerizable compound represented by the said General formula (2), respectively. It may contain, may contain both the photopolymerizable compound represented by the general formula (1) and the photopolymerizable compound represented by the general formula (2), It is preferable that the photopolymerizable compound represented by the general formula (1) is contained alone. This is because the photopolymerizable compound represented by the general formula (1) can form a resist underlayer film having high etching resistance because the photocrosslinkable sites are connected by an aromatic ring.
  • solvent will not be specifically limited if it can dissolve the (A) photopolymerizable compound contained.
  • Specific examples of the solvent (B) include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, n-butyl acetate, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate having high coatability, -Heptanone, ⁇ -butyrolactone, cyclohexanone and the like.
  • the content of the solvent is 5 to 80 parts by mass with respect to 100 parts by mass of the total amount of the photopolymerizable compound represented by the general formula (1) and the photopolymerizable compound represented by the general formula (2).
  • the amount is 5 to 40 parts by weight, more preferably 8 to 30 parts by weight.
  • the composition for forming a resist underlayer film of the present invention may further contain an additive in addition to (A) the photopolymerizable compound and (B) the solvent.
  • the additive include a binder resin, a radiation absorber, a surfactant, a storage stabilizer, an antifoaming agent, and an adhesion assistant.
  • thermoplastic resin is a component which has the effect
  • the thermosetting resin is a component that is cured by heating and becomes insoluble in a solvent, and has a function of preventing intermixing between the resulting resist underlayer film and the resist film formed thereon. It can be preferably used as a resin.
  • thermosetting resins such as urea resins, melamine resins, and aromatic hydrocarbon resins are preferable.
  • these binder resin may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the blending amount of the binder resin is (A) 100 parts by mass of the photopolymerizable compound (the total amount of the photopolymerizable compound represented by the general formula (1) and the photopolymerizable compound represented by the general formula (2) is 100 parts by mass. ) Is preferably 20 parts by mass or less, and more preferably 10 parts by mass or less. When the blending amount is more than 20 parts by mass, the binder resin may inhibit the polymerization of the (A) photopolymerizable compound. Therefore, a resist underlayer film having a high elastic modulus may not be obtained.
  • the radiation absorber examples include oil-soluble dyes, disperse dyes, basic dyes, methine dyes, pyrazole dyes, imidazole dyes, hydroxyazo dyes, and the like; bixin derivatives, norbixine, stilbene, Fluorescent brighteners such as 4,4′-diaminostilbene derivatives, coumarin derivatives, pyrazoline derivatives; hydroxyazo dyes, tinuvin 234 (trade name, manufactured by Ciba Geigy), tinuvin 1130 (trade name, manufactured by Ciba Geigy), etc.
  • Ultraviolet absorbers aromatic compounds such as anthracene derivatives and anthraquinone derivatives. These radiation absorbers can be used alone or in admixture of two or more.
  • the compounding amount of the radiation absorber is preferably 100 parts by mass or less, and more preferably 50 parts by mass or less, with respect to 100 parts by mass of the (A) photopolymerizable compound. When the amount is more than 100 parts by mass, the radiation absorber may inhibit the photoreaction of the (A) photopolymerizable compound.
  • Surfactant is a component having an effect of improving coatability, striation, wettability, developability and the like.
  • the compounding amount of the surfactant is preferably 15 parts by mass or less, and more preferably 10 parts by mass or less with respect to 100 parts by mass of the (A) photopolymerizable compound. If the amount is more than 15 parts by mass, the surfactant may affect the performance of the resist underlayer film (decrease the performance of the resist underlayer film).
  • the pattern forming method of the present invention is a coating film forming step (hereinafter referred to as “step (1)”) in which the resist underlayer film forming composition of the present invention described above is applied onto a substrate to be processed to form a coating film. And a lower layer film forming step (hereinafter referred to as “step (2)”) that forms a resist lower layer film on the substrate to be processed by irradiating the formed coating film with radiation and curing the coating film.
  • step (3) a resist film forming step in which a resist composition is applied on the formed resist underlayer film and dried to form a resist film
  • step (4) An exposure step of exposing the resist coating by selectively irradiating the formed resist coating with radiation (hereinafter sometimes referred to as “step (4)”), and developing the exposed resist coating A resist pattern with A pattern forming step to be formed (hereinafter may be referred to as “step (5)”), and etching the resist underlayer film and the substrate to be processed by using the resist pattern as a mask, thereby forming the same pattern as the predetermined pattern on the substrate to be processed And an etching step (hereinafter, may be referred to as “step (6)”).
  • the step (1) and the step (2) are provided, the elastic modulus of the resist underlayer film to be formed is high, and defects such as pattern bending are effectively prevented. Therefore, a good pattern can be formed on the substrate to be processed.
  • Step (1) is a step of coating the resist underlayer film forming composition of the present invention on a substrate to be processed to form a coating film.
  • the substrate to be processed for example, a silicon wafer, a wafer coated with aluminum, or the like can be used.
  • the method for applying the resist underlayer film forming composition to the substrate to be processed is not particularly limited, and for example, it can be carried out by an appropriate method such as spin coating, cast coating, roll coating or the like.
  • step (2) is a step of forming a resist underlayer film on the substrate to be processed by irradiating the formed coating film with radiation and curing the coating film.
  • the radiation to be irradiated can be appropriately selected from, for example, visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, ⁇ -ray, molecular beam, ion beam and the like.
  • the film thickness of the resist underlayer film is usually 0.1 to 5 ⁇ m.
  • a step (1a) for forming an intermediate layer (intermediate coating) on the resist underlayer film may be further provided as necessary.
  • This intermediate layer is a layer provided with these functions in order to further supplement the functions of the resist underlayer film and / or the resist film in the formation of the resist pattern, or to obtain functions that they do not have.
  • the antireflection film is formed as an intermediate layer, the antireflection function of the resist underlayer film can be further supplemented.
  • This intermediate layer can be formed of an organic compound or an inorganic oxide.
  • organic compounds include materials marketed under the trade names such as “DUV-42”, “DUV-44”, “ARC-28”, and “ARC-29” manufactured by Brewer Science, and Rohm and Haas. Materials commercially available under trade names such as “AR-3” and “AR-19” manufactured by the company can be used.
  • the inorganic oxide for example, a coating type spin-on glass material manufactured by JSR, polysiloxane formed by a CVD method, titanium oxide, alumina oxide, tungsten oxide, or the like can be used.
  • the method for forming the intermediate layer is not particularly limited, and for example, a coating method, a CVD method, or the like can be used. Among these, a coating method is preferable. When the coating method is used, the intermediate layer can be formed continuously after forming the resist underlayer film.
  • the film thickness of the intermediate layer is not particularly limited, and is appropriately selected according to the function required for the intermediate layer, but is preferably in the range of 10 to 3000 nm, more preferably 20 to 300 nm.
  • step (3) is a step of forming a resist film by coating a resist composition on the formed resist underlayer film and drying it. Specifically, after a resist composition is applied so that the resulting resist film has a predetermined thickness, the solvent in the film is volatilized by pre-baking to form a resist film.
  • the resist composition examples include a positive or negative chemically amplified resist composition containing a photoacid generator, a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, and an alkali-soluble resin and a crosslink And negative resist compositions composed of an agent.
  • the resist composition used when forming the resist film on the resist underlayer film has a solid content concentration of usually about 5 to 50% by mass, and is generally filtered through, for example, a filter having a pore diameter of about 0.2 ⁇ m. Then, it is used for formation of a resist film. In this step (step (3)), a commercially available resist composition can be used as it is.
  • the coating method of the resist composition is not particularly limited, and can be performed by, for example, a spin coating method.
  • the pre-baking temperature is appropriately adjusted according to the type of resist composition to be used, but is usually about 30 to 200 ° C., preferably 50 to 150 ° C.
  • step (4) is a step of exposing the resist film by selectively irradiating the formed resist film with radiation.
  • the radiation used for the exposure is appropriate from visible light, ultraviolet light, far ultraviolet light, X-rays, electron beams, ⁇ rays, molecular beams, ion beams, etc., depending on the type of photoacid generator used in the resist composition.
  • far ultraviolet rays are preferable, and in particular, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 excimer laser (wavelength 157 nm), Kr 2 excimer laser (wavelength 147 nm), ArKr excimer laser (Wavelength 134 nm), extreme ultraviolet light (wavelength 13 nm, etc.) and the like are preferable.
  • step (5) is a step of developing the exposed resist film to form a resist pattern having a predetermined pattern.
  • the developer used in this step is appropriately selected depending on the type of resist composition used. Specifically, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanol Amine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3. 0] -5-nonene and the like.
  • water-soluble organic solvents for example, alcohols such as methanol and ethanol, and surfactants can be added to these alkaline aqueous solutions in appropriate amounts.
  • the resist pattern is formed by washing and drying.
  • post-baking can be performed after the exposure before development in order to improve resolution, pattern profile, developability, and the like.
  • the post-baking temperature is appropriately adjusted according to the type of resist composition used, but is usually about 50 to 200 ° C., preferably 70 to 150 ° C.
  • step (6) is a step of forming the same pattern as the predetermined pattern on the substrate to be processed by etching the resist underlayer film and the substrate to be processed using the resist pattern as a mask.
  • dry etching include gas plasma such as oxygen plasma.
  • Weight average molecular weight (Mw) The weight average molecular weight (Mw) was determined by using Tosoh's GPC columns (G2000HXL: 2, G3000HXL: 1), flow rate: 1.0 ml / min, elution solvent: tetrahydrofuran, column temperature: 40 ° C. , And measured by a gel permeation chromatograph (detector: differential refractometer) using monodisperse polystyrene as a standard.
  • Example 1 A separable flask equipped with a thermometer was charged with 100 parts of isophthalaldehyde, 200 parts of isobutyl cyanoacetate, 1 part of piperidine, and 4000 parts of 4-methyl-2-pentanol under a nitrogen atmosphere and stirred at 60 ° C. And reacted for 1 hour to obtain a reaction solution. Thereafter, the reaction solution was allowed to stand for 1 day, and the precipitated solid was filtered and then washed with 4-methyl-2-pentanol to obtain a white solid. This white solid was a compound represented by the following formula (3).
  • a resist underlayer film forming composition (1) was applied on a silicon wafer having a diameter of 8 inches by spin coating to form a coating film.
  • the coating film on the wafer is cured by irradiating the coating film on the wafer with 300 mJ of light having an intensity of 20 mW / cm 2 by a small high-precision exposure apparatus for R & D manufactured by TOPCON, and an underlayer film having a film thickness of 0.3 ⁇ m is formed. Obtained.
  • an intermediate layer composition solution (trade name “NFC SOG080”, manufactured by JSR Corporation) for a three-layer resist process was spin-coated on this lower layer film. Then, it heated at 200 degreeC for 60 second on the hotplate.
  • the film was further heated at 300 ° C. for 60 seconds to form an intermediate layer film having a thickness of 0.05 ⁇ m on the lower layer film.
  • a resist composition was spin-coated on this intermediate layer coating, and pre-baked at 130 ° C. for 90 seconds on a hot plate to form a resist coating having a thickness of 0.2 ⁇ m.
  • resist composition one prepared as follows was used.
  • the obtained resin for a resist composition has each repeating unit derived from each of the monomers (a), (b) and (c), and the molar ratio of each of these repeating units is 64: 18:18. Moreover, the weight average molecular weight (Mw) was 27,000.
  • a mixed solvent mass ratio 7: 3 of propylene glycol monomethyl ether acetate and cyclohexanone was used.
  • the resist film was exposed through the mask pattern only for the optimal exposure time.
  • the exposed resist film was developed at 25 ° C. for 1 minute using a 2.38 mass% aqueous tetramethylammonium hydroxide solution. . Thereafter, it was washed with water and dried to obtain a resist film (resist film (resist pattern) on which a positive resist pattern was formed) formed to form a line-and-space pattern (1L / 1S) having a line width of 70 nm. .
  • Elastic modulus A resist underlayer film forming composition (1) was spin-coated on a silicon wafer having a diameter of 8 inches to form a coating film. Next, the coating film on the wafer is cured by irradiating the coating film on the wafer at 300 mJ with light having an intensity of 20 mW / cm 2 using a small high-precision exposure apparatus for R & D manufactured by TOPCON, and a resist having a film thickness of 0.3 ⁇ m. A lower layer film was obtained. Thereafter, the elastic modulus (GPa) of the lower layer film was measured by a nanoindenter method and evaluated. Evaluation criteria set the thing whose elasticity modulus was 10 GPa or more as the pass "G", and made the thing less than 10 GPa the rejection "N".
  • a resist underlayer film forming composition (1) was spin-coated on a silicon wafer having a diameter of 8 inches to form a coating film.
  • the coating film on the wafer is cured by irradiating the coating film on the wafer at 300 mJ with light having an intensity of 20 mW / cm 2 using a small high-precision exposure apparatus for R & D manufactured by TOPCON, and a resist having a film thickness of 0.3 ⁇ m.
  • a lower layer film was obtained.
  • the evaluation of the standing wave prevention effect is “A”
  • the evaluation result of the elastic modulus is “G”
  • the evaluation result of the etching resistance is “A”.
  • Example 2 A separable flask equipped with a thermometer was charged with 100 parts of cinnamic acid, 200 parts of sodium bicarbonate, 1 part of tetra-n-butylammonium chloride, and 4000 parts of N, N-dimethylformaldehyde under a nitrogen atmosphere and stirred.
  • the reaction solution was obtained by reacting at 110 ° C. for 40 hours. Thereafter, methanol was added to the obtained reaction solution to obtain a precipitate. The resulting precipitate was filtered to obtain a white solid.
  • This white solid was a compound represented by the following formula (4).
  • Example 2 The composition for forming a resist underlayer film of Example 2 was the same as Example 1 except that the compound represented by Formula (4) was used instead of the compound represented by Formula (3). 2) was obtained. About the obtained resist underlayer film forming composition (2), each said evaluation was performed like Example 1. FIG. The evaluation results are shown in Table 1.
  • Example 3 A composition for forming a resist underlayer film of Example 3 in the same manner as in Example 1 except that the compound represented by the following formula (5) was used instead of the compound represented by the above formula (3). (3) was obtained. Each evaluation was performed like Example 1 about the obtained composition for resist underlayer film formation (3). The evaluation results are shown in Table 1.
  • Example 4 The composition for forming a resist underlayer film of Example 4 is the same as Example 1 except that the compound represented by the following formula (6) is used instead of the compound represented by the above formula (3). (4) was obtained. Each evaluation was performed like Example 1 about the obtained composition for resist underlayer film formation (4). The evaluation results are shown in Table 1.
  • Example 5 The composition for forming a resist underlayer film of Example 5 is the same as Example 1 except that the compound represented by the following formula (7) is used instead of the compound represented by the above formula (3). (5) was obtained. Each evaluation was performed like Example 1 about the obtained composition for resist underlayer film formation (5). The evaluation results are shown in Table 1.
  • a resist underlayer film forming composition (6) of Comparative Example 1 was obtained in the same manner as in Example 1 except that 10 parts of the polymer was used instead of the compound represented by the formula (3). It was.
  • Each evaluation was performed in the same manner as in Example 1 using the obtained resist underlayer film forming composition (6).
  • the evaluation results are shown in Table 1.
  • the resist underlayer film (thickness: 0.3 ⁇ m) is formed by forming a coating film on the substrate (silicon wafer having a diameter of 8 inches) with the resist underlayer film forming composition (6), and then applying this coating.
  • the substrate on which the film was formed was placed on a hot plate and heated at 300 ° C. for 120 seconds to form the substrate.
  • Comparative Example 2 instead of the compound represented by the formula (3), 10 parts of bis (4-glycidyloxyphenyl) methane (a compound represented by the following formula (8)) and 1 part of triphenylsulfonium trifluoromethanesulfonate were used. Except for this, a composition for forming a resist underlayer film (7) of Comparative Example 2 was obtained in the same manner as Example 1. Each evaluation was performed like Example 1 about the obtained composition for resist underlayer film formation (7). The evaluation results are shown in Table 1.
  • the resist underlayer film forming compositions of Examples 1 to 5 had the same standing wave prevention effect as the resist underlayer film forming compositions of Comparative Examples 1 and 2, It was confirmed that a resist underlayer film having a high elastic modulus and etching resistance can be formed.
  • composition for forming a resist underlayer film of the present invention can be suitably used as a material for a resist underlayer film formed by a multilayer resist process in an integrated circuit element manufacturing method.

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Abstract

La présente invention a trait à une composition permettant de former un film de sous-couche de réserve, qui présente notamment une excellente résistance à la gravure, et comprenant au moins un élément sélectionné dans le groupe constitué par des composés photopolymérisables représentés par la formule générale (1) et la formule générale (2), ainsi que par un solvant. Dans les formules générales (1) et (2), R11, R12 et R13 représentent un atome d'hydrogène, etc.; R3 représente un groupe n1-valent dérivé d'un composé aromatique; R4 représente un atome d'hydrogène, etc.; R5 représente un groupe organique monovalent dérivé d'un composé aromatique; R6 représente un groupe organique n2-valent; X représente -COO-* [où * représente une liaison se liant à R6], etc.; n1 représente un nombre entier compris entre 2 et 4 inclus; et n2 représente un nombre entier compris entre 2 et 10 inclus.
PCT/JP2011/058221 2010-03-31 2011-03-31 Composition permettant de former un film de sous-couche de réserve et procédé de formation de motif WO2011125839A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018013768A (ja) * 2016-07-07 2018-01-25 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、レジスト下層膜形成方法、及びレジスト下層膜材料用化合物
WO2019059202A1 (fr) * 2017-09-19 2019-03-28 三菱瓦斯化学株式会社 Composition filmogène de lithographie de semi-conducteurs, et procédé et dispositif de formation de motif de réserve
EP3623867A1 (fr) 2018-09-13 2020-03-18 Shin-Etsu Chemical Co., Ltd. Processus de formation de motifs
KR20220024080A (ko) * 2019-06-17 2022-03-03 닛산 가가쿠 가부시키가이샤 디시아노스티릴기를 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물
WO2022186231A1 (fr) * 2021-03-03 2022-09-09 日産化学株式会社 Composition filmogène de sous-couche de réserve comportant un groupe ester d'acide benzylidène-cyanoacétique
EP4418305A1 (fr) 2023-02-15 2024-08-21 Shin-Etsu Chemical Co., Ltd. Procédé de formation de motifs

Families Citing this family (1)

* Cited by examiner, † Cited by third party
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JP2019086545A (ja) 2017-11-01 2019-06-06 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ アリルオキシ誘導体、これを用いたレジスト下層膜形成組成物、ならびにこれを用いたレジスト下層膜および半導体デバイスの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06118656A (ja) * 1992-10-05 1994-04-28 Japan Synthetic Rubber Co Ltd 反射防止膜およびレジストパターンの形成方法
JP2006502448A (ja) * 2002-10-08 2006-01-19 ブルーワー サイエンス アイ エヌ シー． 多数のエポキシ残基を有しており中心部が小さい分子から得られるフォトレジスト底面の反射防止膜
JP2006508377A (ja) * 2002-06-25 2006-03-09 ブルーワー サイエンス アイ エヌ シー． 湿式現像可能な反射防止組成物
WO2006115044A1 (fr) * 2005-04-19 2006-11-02 Nissan Chemical Industries, Ltd. Composition de sous-couche de reserve permettant la formation d'une sous-couche de reserve durcie par photopolymerisation
WO2008109198A1 (fr) * 2007-03-07 2008-09-12 Brewer Science Inc. Revêtements antiréfléchissants contenant des agents de réticulation d'éther vinylique

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612452B2 (ja) * 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JP4285906B2 (ja) * 1998-04-29 2009-06-24 ブルーワー サイエンス アイ エヌ シー． セルロースバインダ由来の速エッチング性かつ熱硬化性の非反射コーティング

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06118656A (ja) * 1992-10-05 1994-04-28 Japan Synthetic Rubber Co Ltd 反射防止膜およびレジストパターンの形成方法
JP2006508377A (ja) * 2002-06-25 2006-03-09 ブルーワー サイエンス アイ エヌ シー． 湿式現像可能な反射防止組成物
JP2006502448A (ja) * 2002-10-08 2006-01-19 ブルーワー サイエンス アイ エヌ シー． 多数のエポキシ残基を有しており中心部が小さい分子から得られるフォトレジスト底面の反射防止膜
WO2006115044A1 (fr) * 2005-04-19 2006-11-02 Nissan Chemical Industries, Ltd. Composition de sous-couche de reserve permettant la formation d'une sous-couche de reserve durcie par photopolymerisation
WO2008109198A1 (fr) * 2007-03-07 2008-09-12 Brewer Science Inc. Revêtements antiréfléchissants contenant des agents de réticulation d'éther vinylique

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018013768A (ja) * 2016-07-07 2018-01-25 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、レジスト下層膜形成方法、及びレジスト下層膜材料用化合物
WO2019059202A1 (fr) * 2017-09-19 2019-03-28 三菱瓦斯化学株式会社 Composition filmogène de lithographie de semi-conducteurs, et procédé et dispositif de formation de motif de réserve
JPWO2019059202A1 (ja) * 2017-09-19 2020-09-03 三菱瓦斯化学株式会社 半導体リソグラフィー膜形成組成物、並びにレジストパターン形成方法及びデバイス
EP3623867A1 (fr) 2018-09-13 2020-03-18 Shin-Etsu Chemical Co., Ltd. Processus de formation de motifs
KR20220024080A (ko) * 2019-06-17 2022-03-03 닛산 가가쿠 가부시키가이샤 디시아노스티릴기를 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물
KR102592573B1 (ko) 2019-06-17 2023-10-23 닛산 가가쿠 가부시키가이샤 디시아노스티릴기를 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물
WO2022186231A1 (fr) * 2021-03-03 2022-09-09 日産化学株式会社 Composition filmogène de sous-couche de réserve comportant un groupe ester d'acide benzylidène-cyanoacétique
EP4418305A1 (fr) 2023-02-15 2024-08-21 Shin-Etsu Chemical Co., Ltd. Procédé de formation de motifs

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