WO2011124576A1 - Sensors - Google Patents

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Publication number
WO2011124576A1
WO2011124576A1 PCT/EP2011/055285 EP2011055285W WO2011124576A1 WO 2011124576 A1 WO2011124576 A1 WO 2011124576A1 EP 2011055285 W EP2011055285 W EP 2011055285W WO 2011124576 A1 WO2011124576 A1 WO 2011124576A1
Authority
WO
WIPO (PCT)
Prior art keywords
frequency
sensor
inertial sensor
oscillator
sensor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/055285
Other languages
English (en)
French (fr)
Inventor
Michael Durston
David Beasley
Kevin Townsend
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Sensing Systems Ltd
Original Assignee
Silicon Sensing Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Sensing Systems Ltd filed Critical Silicon Sensing Systems Ltd
Priority to US13/639,703 priority Critical patent/US9162875B2/en
Priority to CN201180018073.8A priority patent/CN103097860B/zh
Priority to JP2013503087A priority patent/JP2013527920A/ja
Priority to EP11711946.1A priority patent/EP2556334B1/en
Priority to KR1020127029198A priority patent/KR20130040877A/ko
Publication of WO2011124576A1 publication Critical patent/WO2011124576A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/008MEMS characterised by an electronic circuit specially adapted for controlling or driving the same
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/567Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
    • G01C19/5677Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional [2D] vibrators, e.g. ring-shaped vibrators
    • G01C19/5684Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional [2D] vibrators, e.g. ring-shaped vibrators the devices involving a micromechanical structure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces

Definitions

  • the invention relates to sensors. More specifically but not exclusively it relates to sensors such as inertial sensors, for example accelerometers and gyroscopes, in which resonant frequency of a microelectromechanical system (MEMS) sensor must be matched with allied control electronics.
  • MEMS microelectromechanical system
  • Angular velocity sensors incorporating a MEMS sensor of a resonator ring type are known and such examples can be seen in, for example, GB2322196.
  • a vibrating planar ring or hoop-like structure is disclosed.
  • the ring-like structure is suspended in space by a suitable support mount for detecting turning rate, linear acceleration and angular acceleration.
  • Turning rate is sensed by detecting vibrations coupled by Coriolis forces, whereas linear acceleration and angular acceleration are sensed by lateral, vertical and rocking movement of the entire ring or hoop-like structure within its mount.
  • the MEMS resonator is driven into resonance by a suitable driver signal generated by control electronics.
  • control electronics it is necessary for the frequency of the control electronics to be matched, with a suitable tolerance, to the resonant frequency of the MEMS resonator.
  • an inertial sensor comprising an element having a resonant frequency, the element being driven to resonance by suitable driver means, the sensor further comprising electronic control means including an oscillator capable of oscillation at variable frequencies in which the sensor further comprises comparator means for comparing the frequency of the output of the element with the frequency of the oscillator and locking the frequency of the oscillator once a predetermined frequency is achieved.
  • Figure 1 is a schematic drawing showing one form of circuit suitable for matching the frequency of an oscillator to the resonant frequency of a MEMS type ring sensor.
  • a MEMS resonator 1 is driven by a suitable drive signal into resonance.
  • the drive signal is generated by suitable drive means 2 under the control of suitable control electronics 3, including an oscillator.
  • suitable control electronics 3 including an oscillator.
  • the output signal of the MEMS resonator 1 is input in to a threshold detector 4 and to the control electronics 3.
  • the control electronics 3 oscillator On application of power (or release of applied reset signal) to the system, the control electronics 3 oscillator is forced to a frequency that is always less than the MEMS resonator frequency (taking into account all the relevant tolerances of MEMS and control electronics). The control electronics 3 then forces the oscillator frequency to ramp at a suitable speed while monitoring the amplitude of the MEMS transducer signals. When the frequency of the MEMS resonance is reached an increase in the MEMS transducer signals is detected and the control electronics stops the ramp of the oscillator frequency and switches to PLL (phase lock loop) mode.
  • PLL phase lock loop
  • the frequency of the oscillator is now suitably close to the MEMS resonator frequency to allow the system to lock to the MEMS in a short period of time.
  • the circuit detects the dc level after demodulation and looks for a certain threshold. When the threshold is reached the system latches to PLL mode. The PLL loop then pulls the system into the final correct resonant frequency.
  • a peak detector may be used in place of the threshold detector but is not specifically required for the embodiment described above. Additionally, the point of detecting the pickoff signal due to reaching the resonant frequency can be implemented at various points (i.e. before the demod).
  • the invention may be applied to any suitable form of sensor.
  • it can be applied to any form of sensor where there is a requirement to lock to a resonant frequency using a PLL type loop.
  • the diagram shown in Figure 1 is simplified for ease of disclosure.
  • the comparator is a threshold detector. The level detected is after channel amplification and demodulation to a dc level.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
PCT/EP2011/055285 2010-04-08 2011-04-05 Sensors Ceased WO2011124576A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/639,703 US9162875B2 (en) 2010-04-08 2011-04-05 Sensors
CN201180018073.8A CN103097860B (zh) 2010-04-08 2011-04-05 传感器
JP2013503087A JP2013527920A (ja) 2010-04-08 2011-04-05 センサ
EP11711946.1A EP2556334B1 (en) 2010-04-08 2011-04-05 Sensors
KR1020127029198A KR20130040877A (ko) 2010-04-08 2011-04-05 센서들

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1005875.8A GB201005875D0 (en) 2010-04-08 2010-04-08 Sensors
GB1005875.8 2010-04-08

Publications (1)

Publication Number Publication Date
WO2011124576A1 true WO2011124576A1 (en) 2011-10-13

Family

ID=42236016

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/055285 Ceased WO2011124576A1 (en) 2010-04-08 2011-04-05 Sensors

Country Status (7)

Country Link
US (1) US9162875B2 (https=)
EP (1) EP2556334B1 (https=)
JP (1) JP2013527920A (https=)
KR (1) KR20130040877A (https=)
CN (1) CN103097860B (https=)
GB (1) GB201005875D0 (https=)
WO (1) WO2011124576A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103210278A (zh) * 2010-09-20 2013-07-17 快捷半导体公司 惯性传感器模式调谐电路
CN103791897A (zh) * 2014-02-20 2014-05-14 北京华力创通科技股份有限公司 促使微机械陀螺快速起振的电路
US10816569B2 (en) 2018-09-07 2020-10-27 Analog Devices, Inc. Z axis accelerometer using variable vertical gaps
US11255873B2 (en) 2018-09-12 2022-02-22 Analog Devices, Inc. Increased sensitivity z-axis accelerometer
WO2023145430A1 (en) * 2022-01-28 2023-08-03 Panasonic Intellectual Property Management Co., Ltd. Methods and devices for calibrating capacitive resonators

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103840825A (zh) * 2014-03-21 2014-06-04 合肥工业大学 全数字集成电容式传感器接口电路
GB2534562B (en) * 2015-01-26 2017-11-29 Atlantic Inertial Systems Ltd Gyroscope loop filter
US10735006B1 (en) * 2019-06-25 2020-08-04 Infineon Technologies Ag Functional clock generation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783973A (en) * 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom
GB2322196A (en) 1997-02-18 1998-08-19 British Aerospace A vibrating structure gyroscope

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US4619001A (en) * 1983-08-02 1986-10-21 Matsushita Electric Industrial Co., Ltd. Tuning systems on dielectric substrates
JPH09198807A (ja) * 1996-01-18 1997-07-31 Pioneer Electron Corp クロック抽出回路
JPH1183498A (ja) * 1997-09-02 1999-03-26 Sumitomo Precision Prod Co Ltd 半導体振動子の振動調整方法
JP2000018951A (ja) * 1998-06-30 2000-01-21 Aisin Seiki Co Ltd 角速度検出方法および装置
JP2000018952A (ja) * 1998-07-01 2000-01-21 Aisin Seiki Co Ltd 角速度センサ
US6585338B2 (en) * 2000-12-22 2003-07-01 Honeywell International Inc. Quick start resonant circuit control
DE10240087C5 (de) * 2002-08-30 2011-12-01 Austriamicrosystems Ag Vibrationskreisel
JP4336946B2 (ja) 2003-03-20 2009-09-30 セイコーエプソン株式会社 回転角速度の測定方法および装置
DE102005034702A1 (de) * 2005-07-26 2007-02-01 Robert Bosch Gmbh Verfahren und Schaltungsanordnung zur sicheren Inbetriebnahme eines Drehratensensors
DE102005043592A1 (de) * 2005-09-12 2007-03-15 Siemens Ag Verfahren zum Betrieb eines Vibrationskreisels und Sensoranordnung
JP4696996B2 (ja) * 2006-03-27 2011-06-08 パナソニック株式会社 慣性力センサ
US7434465B1 (en) * 2006-08-07 2008-10-14 Litton Systems Inc. Ring resonator gyroscope with cylindrical ring suspension
JP5286818B2 (ja) 2008-02-21 2013-09-11 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5625916B2 (ja) * 2009-02-13 2014-11-19 パナソニック株式会社 発振回路、発振回路の製造方法、この発振回路を用いた慣性センサ及び電子機器
JP5417115B2 (ja) 2009-10-16 2014-02-12 Winヒューマン・レコーダー株式会社 体温調節システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2322196A (en) 1997-02-18 1998-08-19 British Aerospace A vibrating structure gyroscope
US5783973A (en) * 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103210278A (zh) * 2010-09-20 2013-07-17 快捷半导体公司 惯性传感器模式调谐电路
CN103791897A (zh) * 2014-02-20 2014-05-14 北京华力创通科技股份有限公司 促使微机械陀螺快速起振的电路
US10816569B2 (en) 2018-09-07 2020-10-27 Analog Devices, Inc. Z axis accelerometer using variable vertical gaps
US11255873B2 (en) 2018-09-12 2022-02-22 Analog Devices, Inc. Increased sensitivity z-axis accelerometer
WO2023145430A1 (en) * 2022-01-28 2023-08-03 Panasonic Intellectual Property Management Co., Ltd. Methods and devices for calibrating capacitive resonators

Also Published As

Publication number Publication date
CN103097860B (zh) 2016-02-10
JP2013527920A (ja) 2013-07-04
US9162875B2 (en) 2015-10-20
US20130199293A1 (en) 2013-08-08
EP2556334A1 (en) 2013-02-13
EP2556334B1 (en) 2018-08-22
GB201005875D0 (en) 2010-05-26
KR20130040877A (ko) 2013-04-24
CN103097860A (zh) 2013-05-08

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