WO2011111960A1 - Dispositif de source d'énergie pour dispositif de dépôt chimique en phase vapeur et son procédé de commande - Google Patents

Dispositif de source d'énergie pour dispositif de dépôt chimique en phase vapeur et son procédé de commande Download PDF

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Publication number
WO2011111960A1
WO2011111960A1 PCT/KR2011/001549 KR2011001549W WO2011111960A1 WO 2011111960 A1 WO2011111960 A1 WO 2011111960A1 KR 2011001549 W KR2011001549 W KR 2011001549W WO 2011111960 A1 WO2011111960 A1 WO 2011111960A1
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WO
WIPO (PCT)
Prior art keywords
switch
secondary winding
switches
isolation transformer
transformer
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Application number
PCT/KR2011/001549
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English (en)
Korean (ko)
Inventor
유효열
Original Assignee
주식회사 다원시스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 다원시스 filed Critical 주식회사 다원시스
Priority to CN2011800132753A priority Critical patent/CN102934342A/zh
Publication of WO2011111960A1 publication Critical patent/WO2011111960A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P13/00—Arrangements for controlling transformers, reactors or choke coils, for the purpose of obtaining a desired output
    • H02P13/06—Arrangements for controlling transformers, reactors or choke coils, for the purpose of obtaining a desired output by tap-changing; by rearranging interconnections of windings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/10—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using transformers
    • H02M5/12—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using transformers for conversion of voltage or current amplitude only

Definitions

  • the present disclosure relates to a power supply for a chemical vapor deposition (CVD) device, and more particularly, to a power supply device suitable for a CVD device for silicon crystal growth and a switching control method thereof.
  • CVD chemical vapor deposition
  • the load characteristics in a CVD apparatus reactor for silicon crystal growth are as follows.
  • the load is shown as a net resistance load, and as shown in FIG. 1, as the diameter increases, the current increases and the voltage decreases. In other words, it is a load whose equivalent resistance changes relatively with time, and requires a high voltage and a low current at an initial stage and a large current with a low voltage as time passes.
  • FIG. 2 is a block diagram of a power supply device for a CVD apparatus according to the prior art.
  • an isolation transformer 210 which insulates and transforms an input power and outputs it in multiple stages, It includes a tap-changing switch 220 to transfer to the load (R1 ⁇ R4).
  • FIG. 2 illustrates only one phase configuration of a three-phase transformer having the same phase configuration in order to avoid duplication of description.
  • each switch (S221-S225) of the tap-change switch 220 of Figure 2 is composed of a bi-directional SCR switch as shown in Figure 3, the rated voltage of each switch is selected to about 2.5 times the normal use voltage.
  • the first switch S221 it is not easy to configure a bidirectional SCR switch having a high rated voltage of about 7000 [V] or more. Therefore, a problem such as a decrease in the insulation reliability of the switch due to the high load demand voltage may occur, and furthermore, there may be a problem in the reliability of the power supply device.
  • the present disclosure is to solve the above-mentioned conventional problems, and its purpose is to maintain the reliability of the switch while satisfying the load characteristics of the CVD process for silicon crystal growth even when using a tap-change switch of a lower rated voltage than conventional ones.
  • a power supply apparatus for a chemical vapor deposition apparatus for transforming the input power to output in multiple stages;
  • a tap-change switch for respectively intermitting the multi-stage outputs;
  • An auxiliary transformer having a secondary winding in a dot direction different from the dot direction of the secondary winding of the isolation transformer;
  • a first switch having one end connected to one end of the secondary winding of the auxiliary transformer;
  • a second switch connected between one end of the secondary winding of the isolation transformer and the other end of the first switch;
  • a third switch connected between the common connection point of the first and second switches and the common connection point between the loads, and a switching control unit controlling switching of the first to third switches and the tap change switch. It may include.
  • the first switch, the second switch, and the tap-changing switch may be configured as a bidirectional SCR (Silicon-C0ntrolled Rectifier Thyristor), the third switch may be configured as a mechanical switch, and the loads may include the auxiliary transformer. It may be connected between the other end of the secondary side winding of and the other end of the secondary side winding of the isolation transformer.
  • SCR Silicon-C0ntrolled Rectifier Thyristor
  • a switching control method of a power supply for a chemical vapor deposition apparatus in the power supply for a chemical vapor deposition apparatus configured as described above, in the method for controlling the switching of the switches A first switching step of turning on the first to third switches and turning off the remaining switches; And a second switching step of sequentially turning on from the switch intermittent to the lowest output among the tap change switches to the switch intermittent to the lowest output and turning off the remaining switches.
  • the present invention even when using a tap-change switch having a lower rated voltage than the conventional one, it is possible to maintain the high reliability of the switch while satisfying the load characteristics of the CVD process for silicon crystal growth.
  • the effect is to lower the production cost of the power supply and improve the reliability.
  • FIG. 2 is a configuration diagram of a power supply apparatus for a CVD apparatus according to the prior art
  • FIG. 3 is a configuration diagram of each switch of the tap changeover switch of FIG. 2;
  • FIG. 4 is a configuration diagram of a power supply device for a CVD apparatus according to an embodiment of the present invention.
  • 5 to 9 are equivalent circuit diagrams of switching control of each switch of FIG. 4.
  • FIG. 4 is a configuration diagram of a power supply device for a CVD apparatus according to an embodiment of the present invention. As shown in the same drawing, an isolation transformer 410, a tap change switch 420, an auxiliary transformer 430, and a first transformer are shown. To third switches 440, 450, 460, load 470, and switching controller 480.
  • the isolation transformer 410 insulates and transforms the input power of the primary side to output in multiple stages at the secondary side.
  • the output tap of the multiple stages configured at the secondary side has an output tap (Tap2) of 1750V / 557A, 870V / 1307A.
  • the tap-changing switch 420 is to control the multi-stage output of the secondary side of the isolation transformer 410, respectively, for example, the switch (S4), the second output to control the output of the first output tap (Tap2) And a switch S5 for regulating the output of the tap Tap3, a switch S6 for regulating the output of the third output tap Tap4, and a switch S7 for regulating the output of the fourth output tap Tap5.
  • the switches S4 to S7 may be configured as bidirectional SCRs.
  • the auxiliary transformer 430 has a secondary winding in a dot direction different from the dot direction of the secondary winding of the isolation transformer 410, and the secondary winding includes an output tap Tap1 of 1750V / 557A.
  • the first switch S1, 440 has one end (eg, an input end) connected to one end of an output tap Tap1 of the secondary winding of the auxiliary transformer 430, and the other end (eg, an output end) is connected to the second switch. It is connected to the output terminal (S2, 450), for example, may be configured as a bidirectional SCR.
  • One end (eg, an input end) of the second switches S2 and 450 is connected to one end of the output tap Tap2 of the secondary winding of the isolation transformer 410, and the other end (eg, an output end) of the second switch S2 and 450 is connected to the first switch ( It is connected to the output terminal of S1, 440, for example, may be configured as a bidirectional SCR.
  • One end of the third switch S3 and 460 is connected to the common output terminal of the first switch S1 and 440 and the second switch S2 and 450, and the other end of the loads R1 to R4 and 470. It is connected to a common connection point (i.e., a connection point between R2 and R3), and may be constituted by a mechanical switch such as, for example, a vacuum circuit break (VCB).
  • a common connection point i.e., a connection point between R2 and R3
  • VFB vacuum circuit break
  • the load 470 is connected between, for example, the other end of the secondary winding of the auxiliary transformer 430 and the other end of the secondary winding of the isolation transformer 410, and is connected in series with each other.
  • loads may be included, and in this embodiment, each of the loads R1 to R4 may be a silicon pillar.
  • the switching controller 480 is configured to switch the first switch (S1, 440), the second switch (S2, 450), the third switch (S3, 460), and the tap change switch (420, S4 to S7). To control.
  • 5 to 9 are equivalent circuit diagrams of switching control of each switch of FIG. 4.
  • step 1 of FIG. 1 when the switches of S1, S2, and S3 are turned on and the other switches are turned off under the control of the switching controller 480, Tap1 at both ends of R1R2 as shown in FIG. 5.
  • the output voltage of 1750V is applied, and the output voltage of Tap2 is applied to both ends of R3R4, and as a result, 3500V is applied to both ends of the load R1R2R3R4.
  • step 2 of FIG. 1 when only the switch of S4 which intercepts the highest output of the tap changeover switch 420 is turned on and the other switches are turned off under the control of the switching controller 480, the switch shown in FIG. 6 is turned on. As shown, the output voltage of Tap2, 1750 V, is applied across the load R1R2R3R4.
  • step 3 of FIG. 1 when only the switch of S5 which controls the next higher output of the tap changeover switch 420 is turned on and the other switches are turned off, under the control of the switching controller 480, the switch is turned off.
  • the output voltage of Tap3, 870V is applied to both ends of the load R1R2R3R4.
  • step 4 of FIG. 1 if only the switch of S6 which controls the next higher output of the tap changeover switch 420 is turned on and the other switches are turned off, under the control of the switching controller 480, the switch of FIG. 8 is turned off. As shown, 480V, which is an output voltage of Tap4, is applied to both ends of the load R1R2R3R4.
  • step5 of FIG. 1 when only the switch of S7 which intercepts the lowest output of the tap changeover switch 420 is turned on and the other switches are turned off under the control of the switching controller 480, FIG. As shown, the output voltage of Tap5, 270V, is applied across the load R1R2R3R4.
  • a high voltage of 3500 V should be provided to the load R1R2R3R4 at an initial time point such as step 1 of FIG. 1.
  • all the highest voltages 3500 V are applied to the initial switch S221.
  • the switch specification can be lowered while the supply voltage is the same as in the related art.
  • the power supply for a chemical vapor deposition apparatus and its switching control method according to an aspect of the present invention is applied to a CVD apparatus for silicon crystal growth, so that silicon crystal growth can be achieved by using an initial switch having a lower rated voltage than the conventional one. It is possible to maintain the high reliability of the switch while satisfying the load characteristics of the CVD process, which is a very useful invention that lowers the production cost of the power supply and improves the reliability.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

Selon un mode de réalisation, la présente invention concerne un dispositif de source d'énergie, pour un dispositif chimique en phase vapeur (CVD), qui peut comporter : un transformateur d'isolation pour isoler et transformer une source d'énergie d'entrée et pour émettre en sortie l'énergie résultante en multiples étages; un commutateur de changement de languette pour réguler individuellement la sortie à multiples étages; un transformateur auxiliaire ayant un bobinage secondaire dans une direction de point qui diffère de celle du bobinage secondaire du transformateur d'isolation; un premier commutateur dont une première borne est couplée à une première borne du bobinage secondaire du transformateur auxiliaire; un deuxième commutateur qui est couplé entre la première borne du bobinage secondaire du transformateur d'isolation et l'autre borne du premier commutateur, et un troisième commutateur qui est couplé entre un point de contact partagé du premier et du deuxième commutateur et un point de contact partagé entre des charges. Ledit dispositif comporte une unité de commande de commutation afin de commander la commutation des trois commutateurs, ainsi que celle du commutateur de changement de languette. La présente invention permet d'obtenir une fiabilité élevée des commutateurs tout en satisfaisant des caractéristiques de charge pour un traitement de dépôt chimique en phase vapeur (CVD) en vue d'une croissance cristalline du silicium, même si un commutateur initial de changement de languette, dont la tension nominale est plus basse que jusqu'à présent, est utilisé et, par conséquent, les coûts de fabrication des dispositifs de source d'énergie sont réduits et la fiabilité est améliorée.
PCT/KR2011/001549 2010-03-08 2011-03-07 Dispositif de source d'énergie pour dispositif de dépôt chimique en phase vapeur et son procédé de commande WO2011111960A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011800132753A CN102934342A (zh) 2010-03-08 2011-03-07 用于化学气象沉积装置的电源装置及其控制方法

Applications Claiming Priority (2)

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KR1020100020377A KR101122215B1 (ko) 2010-03-08 2010-03-08 화학 기상 증착 장치용 전원 장치 및 그 제어 방법
KR10-2010-0020377 2010-03-08

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WO2011111960A1 true WO2011111960A1 (fr) 2011-09-15

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KR101389457B1 (ko) * 2012-12-04 2014-04-28 김종구 역률 및 고조파가 개선된 다중권선 변압기를 이용한 중첩식 전원 공급 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108121A (ja) * 1982-12-14 1984-06-22 Tokyo Denshi Kogyo Kk 交流電圧調整装置
JPH09305243A (ja) * 1996-05-13 1997-11-28 Seikun Imoto 電圧制御装置
JPH11134040A (ja) * 1997-10-28 1999-05-21 Nissin High Voltage Co Ltd 高電位部用電源装置
KR20030031802A (ko) * 2001-10-16 2003-04-23 삼성전자주식회사 입력되는 디지털 영상신호를 디스플레이하기 위해선택적으로 출력 및 증폭할 수 있는 디지털 영상신호수신장치
JP2009105585A (ja) * 2007-10-23 2009-05-14 Toa Corp オーディオパワーアンプ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100346562C (zh) * 2004-01-19 2007-10-31 南京航空航天大学 变压器箝位零电压开关三电平全桥变换器及其扩展电路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108121A (ja) * 1982-12-14 1984-06-22 Tokyo Denshi Kogyo Kk 交流電圧調整装置
JPH09305243A (ja) * 1996-05-13 1997-11-28 Seikun Imoto 電圧制御装置
JPH11134040A (ja) * 1997-10-28 1999-05-21 Nissin High Voltage Co Ltd 高電位部用電源装置
KR20030031802A (ko) * 2001-10-16 2003-04-23 삼성전자주식회사 입력되는 디지털 영상신호를 디스플레이하기 위해선택적으로 출력 및 증폭할 수 있는 디지털 영상신호수신장치
JP2009105585A (ja) * 2007-10-23 2009-05-14 Toa Corp オーディオパワーアンプ

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CN102934342A (zh) 2013-02-13
KR20110101400A (ko) 2011-09-16
KR101122215B1 (ko) 2012-03-20

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