WO2011111960A1

WO2011111960A1 - Power source device for a chemical vapour deposition device and a method for controlling the same

Info

Publication number: WO2011111960A1
Application number: PCT/KR2011/001549
Authority: WO
Inventors: 유효열
Original assignee: 주식회사 다원시스
Priority date: 2010-03-08
Filing date: 2011-03-07
Publication date: 2011-09-15
Also published as: KR20110101400A; KR101122215B1; CN102934342A

Abstract

One embodiment of the present invention relates to a power source device for a chemical vapour deposition (CVD) device, which may comprise: an isolation transformer for isolating and transforming an input power source and outputting the resultant power in multiple stages; a tab changing switch for individually regulating the multi-stage output; an auxiliary transformer having a secondary winding in a dot direction that differs from the dot direction of the secondary winding of the isolation transformer; a first switch of which a first terminal is coupled to a first terminal of the secondary winding of the auxiliary transformer; a second switch which is coupled between the first terminal of the secondary winding of the isolation transformer and the other terminal of the first switch; and a third switch which is coupled between a shared contact point of the first and second switches and a shared contact point between loads; and comprises a switching control unit for controlling the switching of the first through third switches and also the tab changing switch. The present invention allows high switch reliability to be maintained while satisfying load characteristics for CVD processing for the purpose of silicon crystal growth even if use is made of a tab-changing initial switch having a lower rated voltage than hitherto, and thus the cost of producing power source devices is reduced and reliability is improved.

Description

Power supply apparatus for chemical vapor deposition apparatus and control method thereof

TECHNICAL FIELD The present disclosure relates to a power supply for a chemical vapor deposition (CVD) device, and more particularly, to a power supply device suitable for a CVD device for silicon crystal growth and a switching control method thereof.

In general, the load characteristics in a CVD apparatus reactor for silicon crystal growth are as follows.

In the CVD process for silicon crystal growth, a process is performed for about 72 hours. When the first tungsten wire is put into the reactor and the current is maintained at 1000 to 1200 degrees, the silicon molecules in the chlorosilane or trichloride silane gas adhere to the tungsten surface. To grow. Therefore, the round rod-shaped silicon becomes thicker with time, and finally a silicon ingot is obtained. Here, the load is shown as a net resistance load, and as shown in FIG. 1, as the diameter increases, the current increases and the voltage decreases. In other words, it is a load whose equivalent resistance changes relatively with time, and requires a high voltage and a low current at an initial stage and a large current with a low voltage as time passes.

FIG. 2 is a block diagram of a power supply device for a CVD apparatus according to the prior art. As shown in the drawing, an isolation transformer 210 which insulates and transforms an input power and outputs it in multiple stages, It includes a tap-changing switch 220 to transfer to the load (R1 ~ R4). For reference, FIG. 2 illustrates only one phase configuration of a three-phase transformer having the same phase configuration in order to avoid duplication of description.

In order to satisfy the load condition of FIG. 1, power is supplied to the loads R1-R4 through Tap1 by initially conducting the first switch S221. Over time, the required voltage is lowered and the current is higher. When the load required voltage reaches Tap2, the first switch S221 is stopped and the second switch S222 conducts Tap2. In the same way, it will switch sequentially to Tap5.

However, the apparatus of FIG. 2 initially has the disadvantage that the voltage specification of the first switch S221 for supplying the voltage 3500V required by the loads R1-R4 is high. That is, each switch (S221-S225) of the tap-change switch 220 of Figure 2 is composed of a bi-directional SCR switch as shown in Figure 3, the rated voltage of each switch is selected to about 2.5 times the normal use voltage. For the first switch S221, it is not easy to configure a bidirectional SCR switch having a high rated voltage of about 7000 [V] or more. Therefore, a problem such as a decrease in the insulation reliability of the switch due to the high load demand voltage may occur, and furthermore, there may be a problem in the reliability of the power supply device.

The present disclosure is to solve the above-mentioned conventional problems, and its purpose is to maintain the reliability of the switch while satisfying the load characteristics of the CVD process for silicon crystal growth even when using a tap-change switch of a lower rated voltage than conventional ones. To provide a power supply for a chemical vapor deposition apparatus and its switching control method.

In order to achieve the above object, a power supply apparatus for a chemical vapor deposition apparatus according to an aspect of the present invention, the isolation transformer for transforming the input power to output in multiple stages; A tap-change switch for respectively intermitting the multi-stage outputs; An auxiliary transformer having a secondary winding in a dot direction different from the dot direction of the secondary winding of the isolation transformer; A first switch having one end connected to one end of the secondary winding of the auxiliary transformer; A second switch connected between one end of the secondary winding of the isolation transformer and the other end of the first switch; And a third switch connected between the common connection point of the first and second switches and the common connection point between the loads, and a switching control unit controlling switching of the first to third switches and the tap change switch. It may include.

The first switch, the second switch, and the tap-changing switch may be configured as a bidirectional SCR (Silicon-C0ntrolled Rectifier Thyristor), the third switch may be configured as a mechanical switch, and the loads may include the auxiliary transformer. It may be connected between the other end of the secondary side winding of and the other end of the secondary side winding of the isolation transformer.

In order to achieve the above object, a switching control method of a power supply for a chemical vapor deposition apparatus according to another aspect of the present invention, in the power supply for a chemical vapor deposition apparatus configured as described above, in the method for controlling the switching of the switches A first switching step of turning on the first to third switches and turning off the remaining switches; And a second switching step of sequentially turning on from the switch intermittent to the lowest output among the tap change switches to the switch intermittent to the lowest output and turning off the remaining switches.

As described above, according to various aspects of the present invention, even when using a tap-change switch having a lower rated voltage than the conventional one, it is possible to maintain the high reliability of the switch while satisfying the load characteristics of the CVD process for silicon crystal growth. The effect is to lower the production cost of the power supply and improve the reliability.

1 shows load characteristics in a CVD apparatus reactor,

2 is a configuration diagram of a power supply apparatus for a CVD apparatus according to the prior art,

3 is a configuration diagram of each switch of the tap changeover switch of FIG. 2;

4 is a configuration diagram of a power supply device for a CVD apparatus according to an embodiment of the present invention;

5 to 9 are equivalent circuit diagrams of switching control of each switch of FIG. 4.

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible even though they are shown in different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

In addition, in describing the component of this invention, terms, such as 1st, 2nd, A, B, (a), (b), can be used. These terms are only for distinguishing the components from other components, and the nature, order or order of the components are not limited by the terms. If a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected or connected to that other component, but between components It will be understood that may be "connected", "coupled" or "connected".

4 is a configuration diagram of a power supply device for a CVD apparatus according to an embodiment of the present invention. As shown in the same drawing, an isolation transformer 410, a tap change switch 420, an auxiliary transformer 430, and a first transformer are shown. To

third switches

440, 450, 460, load 470, and switching controller 480.

The isolation transformer 410 insulates and transforms the input power of the primary side to output in multiple stages at the secondary side. For example, the output tap of the multiple stages configured at the secondary side has an output tap (Tap2) of 1750V / 557A, 870V / 1307A. Output taps (Tap3), output taps (Tap4) of 480V / 2297A, and output taps (Tap5) of 270V / 3047A.

The tap-changing switch 420 is to control the multi-stage output of the secondary side of the isolation transformer 410, respectively, for example, the switch (S4), the second output to control the output of the first output tap (Tap2) And a switch S5 for regulating the output of the tap Tap3, a switch S6 for regulating the output of the third output tap Tap4, and a switch S7 for regulating the output of the fourth output tap Tap5. The switches S4 to S7 may be configured as bidirectional SCRs.

The auxiliary transformer 430 has a secondary winding in a dot direction different from the dot direction of the secondary winding of the isolation transformer 410, and the secondary winding includes an output tap Tap1 of 1750V / 557A.

The first switch S1, 440 has one end (eg, an input end) connected to one end of an output tap Tap1 of the secondary winding of the auxiliary transformer 430, and the other end (eg, an output end) is connected to the second switch. It is connected to the output terminal (S2, 450), for example, may be configured as a bidirectional SCR.

One end (eg, an input end) of the second switches S2 and 450 is connected to one end of the output tap Tap2 of the secondary winding of the isolation transformer 410, and the other end (eg, an output end) of the second switch S2 and 450 is connected to the first switch ( It is connected to the output terminal of S1, 440, for example, may be configured as a bidirectional SCR.

One end of the third switch S3 and 460 is connected to the common output terminal of the first switch S1 and 440 and the second switch S2 and 450, and the other end of the loads R1 to R4 and 470. It is connected to a common connection point (i.e., a connection point between R2 and R3), and may be constituted by a mechanical switch such as, for example, a vacuum circuit break (VCB).

The load 470 is connected between, for example, the other end of the secondary winding of the auxiliary transformer 430 and the other end of the secondary winding of the isolation transformer 410, and is connected in series with each other. Four loads may be included, and in this embodiment, each of the loads R1 to R4 may be a silicon pillar.

The switching controller 480 is configured to switch the first switch (S1, 440), the second switch (S2, 450), the third switch (S3, 460), and the tap change switch (420, S4 to S7). To control.

Next, a switching control method of a power supply apparatus for a chemical vapor deposition apparatus according to an embodiment of the present invention will be described, but will be described in parallel with the operation of the power supply apparatus of FIG. 4 with reference to FIGS.

Initially as in step 1 of FIG. 1, when the switches of S1, S2, and S3 are turned on and the other switches are turned off under the control of the switching controller 480, Tap1 at both ends of R1R2 as shown in FIG. 5. The output voltage of 1750V is applied, and the output voltage of Tap2 is applied to both ends of R3R4, and as a result, 3500V is applied to both ends of the load R1R2R3R4.

Subsequently, at the time of step 2 of FIG. 1, when only the switch of S4 which intercepts the highest output of the tap changeover switch 420 is turned on and the other switches are turned off under the control of the switching controller 480, the switch shown in FIG. 6 is turned on. As shown, the output voltage of Tap2, 1750 V, is applied across the load R1R2R3R4.

Subsequently, at the time of step 3 of FIG. 1, when only the switch of S5 which controls the next higher output of the tap changeover switch 420 is turned on and the other switches are turned off, under the control of the switching controller 480, the switch is turned off. As described above, the output voltage of Tap3, 870V, is applied to both ends of the load R1R2R3R4.

Subsequently, at the time of step 4 of FIG. 1, if only the switch of S6 which controls the next higher output of the tap changeover switch 420 is turned on and the other switches are turned off, under the control of the switching controller 480, the switch of FIG. 8 is turned off. As shown, 480V, which is an output voltage of Tap4, is applied to both ends of the load R1R2R3R4.

Finally, at the time of step5 of FIG. 1, when only the switch of S7 which intercepts the lowest output of the tap changeover switch 420 is turned on and the other switches are turned off under the control of the switching controller 480, FIG. As shown, the output voltage of Tap5, 270V, is applied across the load R1R2R3R4.

As described above, a high voltage of 3500 V should be provided to the load R1R2R3R4 at an initial time point such as step 1 of FIG. 1. According to the conventional power supply device of FIG. 2, all the highest voltages 3500 V are applied to the initial switch S221. According to the power supply device of the present invention, since the initial switches S1 and S2 take only 1750V, which is half of the highest voltage, the switch specification can be lowered while the supply voltage is the same as in the related art.

Therefore, the power supply for a chemical vapor deposition apparatus and its switching control method according to an aspect of the present invention is applied to a CVD apparatus for silicon crystal growth, so that silicon crystal growth can be achieved by using an initial switch having a lower rated voltage than the conventional one. It is possible to maintain the high reliability of the switch while satisfying the load characteristics of the CVD process, which is a very useful invention that lowers the production cost of the power supply and improves the reliability.

In the above description, it is described that all the components constituting the embodiments of the present invention are combined or operated in one, but the present invention is not necessarily limited to these embodiments. In other words, within the scope of the present invention, all of the components may be selectively operated in combination with one or more. In addition, although all of the components may be implemented as one independent hardware, each or some of the components of the program modules are selectively combined to perform some or all of the functions combined in one or a plurality of hardware It may be implemented as a computer program having a. Codes and code segments constituting the computer program may be easily inferred by those skilled in the art. Such a computer program may be stored in a computer readable storage medium and read and executed by a computer, thereby implementing embodiments of the present invention. The storage medium of the computer program may include a magnetic recording medium, an optical recording medium, a carrier wave medium, and the like.

In addition, the terms "comprise", "comprise" or "having" described above mean that the corresponding component may be inherent unless specifically stated otherwise, and thus excludes other components. It should be construed that it may further include other components instead. All terms, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. Terms commonly used, such as terms defined in a dictionary, should be interpreted to coincide with the contextual meaning of the related art, and shall not be interpreted in an ideal or excessively formal sense unless explicitly defined in the present invention.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application claims priority under No. 119 (a) (35 USC § 119 (a)) of the US Patent Act No. 10-2010-0020377 filed with Korea on March 08, 2010. All content is incorporated by reference in this patent application. In addition, if this patent application claims priority for the same reason as above for a country other than the United States, all the contents thereof are incorporated into this patent application by reference.

Claims

An isolation transformer for transforming the input power into output in multiple stages;

A tap-change switch for respectively intermitting the multi-stage outputs;

An auxiliary transformer having a secondary winding in a dot direction different from the dot direction of the secondary winding of the isolation transformer;

A first switch having one end connected to one end of the secondary winding of the auxiliary transformer;

A second switch connected between one end of the secondary winding of the isolation transformer and the other end of the first switch; And

A third switch connected between the common connection point of the first and second switches and the common connection point between the loads;

Power supply for chemical vapor deposition apparatus comprising a.
The method of claim 1,

And wherein the first switch, the second switch, and the tap change switch comprise a bidirectional SCR (Silicon-C0ntrolled Rectifier Thyristor).
The method of claim 1,

And said third switch comprises a mechanical switch.
The method of claim 1,

And the loads are connected between the other end of the secondary winding of the auxiliary transformer and the other end of the secondary winding of the isolation transformer.
The method of claim 1,

And a switching control unit for controlling the switching of the first to third switches and the tap changer switch.
An isolation transformer for transforming the input power into output in multiple stages; A tap-change switch for respectively intermitting the multi-stage outputs; An auxiliary transformer having a secondary winding in a dot direction different from the dot direction of the secondary winding of the isolation transformer; A first switch having one end connected to one end of the secondary winding of the auxiliary transformer; A second switch connected between one end of the secondary winding of the isolation transformer and the other end of the first switch; And a third switch connected between a common connection point of the first and second switches and a common connection point between the loads, the method of controlling switching of the switches, comprising:

A first switching step of turning on the first to third switches and turning off the remaining switches; And

A second switching step of sequentially turning on from the switch regulating the highest output to the switch regulating the lowest output among the tap-change switches and turning off the remaining switches

Switching control method of a power supply for a chemical vapor deposition apparatus comprising a.