WO2011111343A1 - Appareil de génération de faisceau d'ions, appareil de traitement de substrat, et procédé de fabrication de dispositif électronique utilisant lesdits appareils - Google Patents

Appareil de génération de faisceau d'ions, appareil de traitement de substrat, et procédé de fabrication de dispositif électronique utilisant lesdits appareils Download PDF

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Publication number
WO2011111343A1
WO2011111343A1 PCT/JP2011/001249 JP2011001249W WO2011111343A1 WO 2011111343 A1 WO2011111343 A1 WO 2011111343A1 JP 2011001249 W JP2011001249 W JP 2011001249W WO 2011111343 A1 WO2011111343 A1 WO 2011111343A1
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Prior art keywords
electrode
ion beam
dispersion
substrate
dispersion electrode
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PCT/JP2011/001249
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English (en)
Japanese (ja)
Inventor
裕久 平柳
歩 三好
アインシタイン ノエル アバラ
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キヤノンアネルバ株式会社
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Publication of WO2011111343A1 publication Critical patent/WO2011111343A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/0817—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

Definitions

  • the present invention relates to microfabrication of a semiconductor substrate or a magnetic disk substrate, an ion beam generator for performing microfabrication and surface flattening with high accuracy and uniformity, a substrate processing apparatus using such an apparatus, and And an electronic device manufacturing method using the apparatus.
  • Patent Document 1 discloses a multi-slot structure
  • Patent Document 2 discloses a tilted ion by a slit-shaped opening. A method for generating a beam is disclosed.
  • the ion beam extracted from the plasma chamber is bent in one direction by the grid structure, but the ion beam cannot be divided and distributed in different directions for irradiation.
  • the ion beam can be bent in one direction, but the ion beam cannot be divided and irradiated in different directions. Therefore, on the substrate, the incident direction of the ion beam is biased in a predetermined direction, and there is a problem that the incident direction and the incident amount are not uniform.
  • An object of the present invention is to provide an ion beam generating apparatus that can disperse an ion beam extracted from a plasma chamber to reduce the deviation of the direction of the ion beam incident on the substrate and can perform uniform substrate processing. And It is another object of the present invention to provide a substrate processing apparatus provided with such an ion beam generator and a method for manufacturing an electronic device using the ion beam generator.
  • a first aspect of the present invention is a discharge tank for generating plasma;
  • An extraction electrode having a plurality of openings for extracting ions generated in the discharge tank, and a plurality of openings disposed on the front surface of the extraction electrode for dispersing the ion beam extracted by the extraction electrode And an ion beam generator.
  • the second of the present invention is a substrate holder for holding the substrate;
  • an ion beam generator disposed opposite to the surface of the substrate is provided on each of both surfaces of the substrate, the substrate processing apparatus,
  • the ion beam generator is the ion beam generator of the present invention.
  • 3rd of this invention is a manufacturing method of the electronic device using the ion beam generator of the said this invention, Comprising: Generating plasma in the discharge vessel; Applying a voltage to the extraction electrode to extract an ion beam from the plasma in the discharge vessel; Generating an electric field on the dispersion electrode and dispersing the ion beam; Performing a surface treatment of the substrate with the dispersed ion beam; It is characterized by including.
  • the ion beam generator of the present invention is provided with a dispersion electrode to disperse the ion beam extracted from the plasma chamber in multiple directions, so that a uniform ion beam with no deviation in the incident direction with respect to the entire surface of the substrate to be processed is obtained. Can be irradiated. Therefore, according to the present invention, it is possible to satisfactorily perform surface treatment of a substrate using an ion beam in manufacturing an electronic device.
  • FIG. 2 is a diagram illustrating a configuration example of a carrier that holds a substrate in the apparatus of FIG. 1. It is a cross-sectional schematic diagram which shows the detail of the ion beam generator of the substrate processing apparatus of FIG. It is the perspective view and top view for demonstrating the detailed structure of the extraction electrode and dispersion electrode of the ion beam generator of this invention. It is sectional drawing explaining the detailed structure of the extraction electrode and dispersion electrode of the ion beam generator of this invention. It is sectional drawing and top view explaining 1st Embodiment of the dispersion
  • FIG. 7 is a top view of the first dispersion electrode shown in FIG. 6. It is sectional drawing and a perspective view for demonstrating the electric field formed in the projection part vicinity of the dispersion
  • FIG. 7 is a cross-sectional view for explaining an electric field formed when the second dispersion electrode is set to a floating potential in the dispersion electrode configuration shown in FIG. 6.
  • FIG. 7 is a cross-sectional view for explaining an electric field formed when a resistance element is connected to a second dispersion electrode in the dispersion electrode configuration shown in FIG. 6. It is a cross-sectional schematic diagram for demonstrating 2nd Embodiment of the ion beam generator of this invention.
  • FIG. 1 is a diagram schematically showing a configuration of an embodiment of a substrate processing apparatus according to the present invention as viewed from above.
  • a substrate processing apparatus 100 includes a substrate (wafer) W, first and second ion beam generators 1a and 1b arranged to face each other with the substrate W interposed therebetween, a control unit 101, and a counter. 103 and a computer interface 105.
  • the substrate W in this example is a substrate for a magnetic recording medium such as a hard disk, and generally has an opening formed at the center of a substantially disk-shaped substrate.
  • substrate W is hold
  • the carrier includes two substrate holders 20 and a slider member 10 that holds the substrate holder 20 in the vertical direction (vertical direction) and moves on the conveyance path.
  • Light weight Al (A5052) or the like is usually used for the slider member and the substrate holder.
  • the substrate holder 20 has a circular opening 20a into which a substrate is inserted at the center, and has a shape whose width is reduced in two steps on the lower side.
  • Inconel L-shaped spring members 21, 22, and 23 are attached at three locations around the opening 20a.
  • the spring member (movable spring member) 23 is configured to be pushed downward.
  • V-shaped grooves for gripping the outer peripheral end face of the substrate are formed at the distal ends of the spring members 21, 22, and 23, and project into the opening 20a.
  • the attaching directions of the spring members 21, 22, and 23 are attached rotationally symmetrically.
  • the support claws of the two spring members 21 and 22 are arranged at positions symmetrical with respect to the vertical line passing through the center of the opening of the substrate holder 20, and the support claws of the movable spring member 23 are arranged on the vertical line.
  • the slider member 10 has a U-shaped cross-sectional shape in which a recess 10b is formed at the center, and the upper thick portion 10a includes an intermediate portion of the substrate holder 20.
  • a slit-like groove is formed so as to penetrate the recessed portion 10b.
  • a pair of insulating members 11a and 11b are arranged at both ends in the slit-like groove, the insulating member 11a on the end side of the slider member 10 is fixed in the groove, and the insulating member 11b on the center side of the slider member 10 is left and right. It is arranged to be movable.
  • a leaf spring 12 is attached so as to urge the movable insulating member 11b toward the end of the slider member 10. In this way, by inserting the substrate holder 20 into the groove of the slider member 10 and tightening the screw 13, the substrate holder 10 is pressed to the outside of the carrier and firmly fixed.
  • a large number of magnets 14 are attached to the bottom of the slider member 10 with the magnetizing directions alternately reversed, and the slider member 10 moves by the interaction with the rotating magnet 40 disposed along the conveyance path.
  • a guide roller 41 for preventing the slider from being detached from the conveyance path and a roller 42 for preventing the fall are attached to the conveyance path at a predetermined interval.
  • the first ion beam generator 1a and the second ion beam generator 1b are arranged to face each other across the substrate W so as to face both surfaces of the substrate W. That is, each of the first ion beam generator 1a and the second ion beam generator 1b is arranged to irradiate an ion beam to a region between them, and a substrate W having an opening in the region is formed.
  • a substrate carrier for holding is disposed. In the configuration shown in FIG. 1, the ion beam irradiation surfaces of the first and second ion beam generators 1a and 1b and the processing surface of the substrate W are disposed so as to be substantially parallel.
  • the first ion beam generator 1a includes an RF (radio frequency) electrode 5a, a discharge tank 2a for generating plasma, and an extraction electrode 7a (electrode 71a from the plasma tank 2a side) as a mechanism for extracting ions in the plasma. 72a, 73a). Further, a dispersion electrode 30a for dispersing the ion beam extracted by the extraction electrode 7a is provided.
  • dispersion refers to dividing an ion beam in one direction into ion beams in a plurality of directions.
  • the extraction electrodes 71a, 72a, 73a and the dispersion electrode 30a are connected to voltage sources 81a, 82a, 83a, 84a so that they can be controlled independently.
  • a neutralizer 9a is installed in the vicinity of the extraction electrode 7a and the dispersion electrode 30a. The neutralizer 9a is configured to irradiate electrons in order to neutralize the ion beam emitted by the ion beam generator 1a.
  • a treatment gas such as argon (Ar) is supplied into the discharge tank from a gas introduction means (not shown).
  • Ar is supplied from the gas introduction means into the discharge chamber 2a, and RF power is applied from the RF source source 85a to the electrode 5a to generate plasma.
  • Ions in the plasma are extracted by the extraction electrode 7a, dispersed by the dispersion electrode 30a, and then irradiated onto the substrate W, and the surface of the substrate W is processed by the ion beam.
  • the second ion beam generator 1b is also configured in the same manner as the ion beam generator 1a, description thereof is omitted.
  • the control unit 101 is electrically connected to the voltage source 8a of the ion beam generator 1a and the voltage source 8b of the ion beam generator 1b, and controls the voltage sources 8a and 8b.
  • the counter 103 is connected to the control unit 101, counts the number of substrates processed by the ion beam generators 1a and 1b, and starts the cleaning process when the number reaches a specified number (for example, 1000).
  • the control unit 101 can be instructed.
  • the control unit 101 has a program memory for storing a program (software) for executing all control related to ion beam etching processing and substrate transfer processing and all control related to various additional functions.
  • a central processing control unit (CPU) of the computer reads out and executes a required program sequentially from the program memory.
  • Various storage media such as a hard disk, an optical disk, and a flash memory can be used for program storage management.
  • the computer interface 105 is connected to the control unit 101 and the counter 103, and is configured to allow the user of the apparatus to input cleaning conditions (processing time, etc.).
  • FIG. 3 is a schematic sectional view showing a detailed structure of an embodiment of the ion beam generator of the present invention. Since the structures of the first and second ion beam generators 1a and 1b in FIG. 1 are the same, description will be made by appropriately omitting the branch codes a and b.
  • the ion beam generator 1 is provided with a discharge tank 2 for confining plasma.
  • the pressure in the discharge chamber 2 is normally maintained in the range of about 1 ⁇ 10 ⁇ 4 Pa (1 ⁇ 10 ⁇ 5 mbar) to about 1 ⁇ 10 ⁇ 2 Pa (1 ⁇ 10 ⁇ 3 mbar).
  • the discharge vessel 2 is partitioned by a plasma confinement vessel 3, and multipolar magnetic means 4 for trapping ions released into the discharge vessel 2 as a result of the formation of plasma is disposed around the discharge vessel 2.
  • the magnetic means 4 is usually provided with a plurality of rod-shaped permanent magnets.
  • N and S cycles are generated only along one axis by using a plurality of relatively long bar magnets whose polarities are alternately changed may be employed.
  • a checker board configuration in which shorter magnets are arranged so as to spread on a plane formed by two axes orthogonal to each other in the N and S cycles may be employed.
  • RF power is applied to the rear wall of the plasma confinement vessel 3 by the RF coil means (RF electrode) 5 and supplied to the discharge vessel 2 via the dielectric RF power coupling window 6 to generate plasma.
  • a dispersion electrode 30 for dispersing the direction of ions accelerated vertically by the extraction electrode 7 is disposed on the front surface of the extraction electrode 7.
  • the openings of the extraction electrodes 71, 72, and 73 are arranged at overlapping positions when projected onto each other. That is, the ion beam is drawn linearly through the overlapping openings.
  • the size of the opening of each extraction electrode may be different.
  • the opening 66 of the dispersion electrode 30 partially overlaps or does not completely overlap the position where the opening 76 of the extraction electrodes 71, 72, 73 is projected onto the dispersion electrode 30. So that they are open at different positions.
  • FIG. 4A is a perspective view showing the positional relationship between the extraction electrodes 71, 72, 73 and the dispersion electrode 30 of this example
  • FIG. 4B shows the position of the extraction electrodes 71, 72, 73 of this example
  • FIG. 6 is a top view in which the opening 76 and the opening 66 of the dispersion electrode 30 are overlapped and described.
  • the opening indicated by hatching in the drawing is the opening 76 of the extraction electrodes 71, 72, 73.
  • the openings 76 of the extraction electrodes 71, 72, 72 are arranged in a face-centered lattice pattern, and are arranged so as to have an alternate positional relationship with the openings 66 of the dispersion electrode 30.
  • an ion beam emitted from one opening 76a of the extraction electrodes 71, 72, 73 is ionized in a plurality of directions by an electric field formed in the vicinity of the opening 66 of the dispersion electrode 30. Disperse and bend. As a result, the ion beam is expanded to a region 68 including the four openings 66 on the dispersion electrode 30 and is emitted from one opening 66 included in the region 68 with an inclination angle.
  • FIG. 5 is a schematic cross-sectional view for explaining the emission direction of ions extracted from the dispersion electrode 30.
  • the ion beam 77 extracted substantially perpendicularly from the extraction electrodes 71, 72, 73 is divided in a plurality of directions by the electric field formed in the vicinity of the opening 66 of the dispersion electrode 30 and reaches the dispersion electrode 30 while being bent. .
  • ions that have reached the opening 66 of the dispersion electrode 30 pass through the opening 66 and are incident on the substrate W to be processed disposed on the side opposite to the extraction electrode 7 at an angle. This contributes to the etching process and flattening process of the surface.
  • FIG. 6 and 7 show the detailed configuration of an embodiment of the dispersion electrode 30 according to the present invention.
  • FIG. 6 is a side sectional view of the dispersion electrode 30 of this example
  • FIG. 7 is a top view of the first dispersion electrode 31 of this example viewed from the discharge tank 2 side.
  • the dispersion electrode 30 includes a first dispersion electrode 31, a second dispersion electrode 32, and a third dispersion electrode 33 in that order from the extraction electrode side.
  • a first insulator 34 that insulates the first dispersion electrode 31 and the second dispersion electrode 32 from each other and a second insulator 35 that insulates the second dispersion electrode 32 and the third dispersion electrode 33 from each other are laminated. ing.
  • the first dispersed electrode 31 has first openings 67 and second openings 31 a arranged alternately.
  • the second dispersion electrode 32 has a projection 36 and a third opening 32 a, and the projection 36 protrudes from the first opening 67 toward the extraction electrode 7, and the tip of the first dispersion electrode 31. It protrudes from the surface on the lead electrode 7 side.
  • the third opening 32 a of the second dispersion electrode 32 is opened so as to overlap the second opening 31 a of the first dispersion electrode 31.
  • a first insulator 34 is filled between the protrusion 36 of the second dispersion electrode 32 and the first dispersion electrode 31.
  • the third dispersion electrode 33 has a fourth opening 33a at a position overlapping the second opening 31a of the first dispersion electrode 31 and the third opening 32a of the second dispersion electrode, and these are aligned with each other.
  • the openings 66 of the dispersion electrode 30 are formed.
  • the first dispersion electrode 31 and the third dispersion electrode 33 are grounded, and a positive potential is applied to the second dispersion electrode 32.
  • FIG. 8A is a schematic cross-sectional view for explaining an electric field formed in the vicinity of the protrusion 36 of the dispersion electrode 30 in FIG. 6, and FIG. 8B is a perspective view thereof.
  • the electric field 46 is formed from the protrusion 36 toward the surface of the first dispersion electrode 31.
  • the ion beam 47 extracted from the extraction electrode 7 in a substantially straight line by the electric field 46 is dispersed around the protrusion 36, and an opening provided around the protrusion 36 as shown in FIG. Passing through 66, the substrate W is irradiated.
  • the electric field emitted from the second dispersion electrode 32 is confined (shielded) in the third dispersion electrode 33, so that the space between the dispersion electrode 30 and the substrate W is reduced. A leakage electric field that causes the ion beam 47 to be bent again in the space is prevented.
  • distribution electrode 33 were set as the earth voltage in this example, it is not limited to this.
  • the first dispersion electrode 31 and the third dispersion electrode 33 may have the same polarity or the same polarity with respect to the second dispersion electrode 32.
  • both the potentials of the first dispersion electrode 31 and the third dispersion electrode 33 may be simultaneously negative or positive with respect to the potential of the second dispersion electrode 32.
  • the ion beam can be set to a voltage that can be effectively extracted according to the voltage of the extraction electrode 7 and the substrate W.
  • the first and second insulators 34 and 35 are used as constituent elements. However, in order to insulate the first to third dispersed electrodes 31 to 33, these dispersed electrodes are separated from each other to form a space. Also good.
  • the second dispersion electrode 32 may be set to a floating voltage, and the second dispersion electrode 32 may be charged by ions incident on the protrusion 36 so that the voltage is self-generated.
  • FIG. 9 (A) is an initial state
  • (B) is a schematic cross-sectional view showing a state in which the second dispersion electrode 32 is sufficiently charged.
  • plasma is generated in the discharge chamber 2 using Ar gas, and positive ions are extracted from the extraction electrode 7.
  • FIG. 9A at the beginning of extraction, the ion beam 47 is uniformly incident on the protrusions 36 of the second dispersion electrode 32 and the first dispersion electrode 31 of the dispersion electrode 30.
  • the second dispersion electrode 32 is at a floating potential, so that positive charges of ions incident on the protrusions 36 are accumulated in the second dispersion electrode 32.
  • the positive charges of the ions incident on the first dispersion electrode 31 are neutralized because the first dispersion electrode 31 is grounded, and the first dispersion electrode 31 is maintained at the ground potential.
  • the electric charge accumulated in the second dispersion electrode 32 forms an electric field 46 with the first dispersion electrode 31 so as to repel the ion beam 47.
  • the ion beam 47 eventually cannot reach the protrusion 36, and the charge accumulation amount in the second dispersion electrode 32 depends on the density of the ion beam 47 and the acceleration voltage. Saturates at the charge amount determined by.
  • the ion beam 47 that has reached the vicinity of the protrusion 36 is dispersed, passes through the opening 66 formed in the vicinity of the protrusion 36, and enters the substrate W with an inclination.
  • FIG. 9B shows the charge accumulation, the shape of the electric field generated, and the ion beam dispersion state at this time. In other words, floating the second dispersion electrode 32 has the same effect as applying a voltage at which ions cannot reach the second dispersion electrode 32.
  • FIG. 10 is a conceptual diagram showing how the ion beam 47 is dispersed in a configuration in which a resistance element 49 is inserted between the second dispersion electrode 32 and the ground potential.
  • the second dispersion electrode 32 is charged by the charge of the positive ions that have flowed in through the protrusion 36, and at the same time has a positive potential due to this accumulated charge.
  • the ion beam 47 is dispersed and the amount of incident light on the protrusion 36 decreases.
  • the potential of the second dispersion electrode 32 rises electrons flow into the second dispersion electrode 32 through the resistance element 49 due to the potential difference from the ground potential, and the positive charge of the second dispersion electrode 32 is increased. To neutralize part of the.
  • the accumulated charge amount of the protrusion 36 and the second dispersion electrode 32 balances the positive charge flowing in by the ion beam 47 and the negative charge due to the electrons flowing in through the resistance element 49, so that the net charge There will be no inflow.
  • the potential of the protrusion 36 is lower than in the case of a complete floating potential.
  • the strength of the electric field 46 for dispersing the ion beam 47 can be reduced, and as a result, the dispersion of the ion beam 47 can be reduced.
  • the reason why the resistance element 49 is a variable resistance is that the potential of the second dispersion electrode 32 can be controlled, and the magnitude of dispersion of the ion beam 47 can be controlled.
  • FIG. 11 shows a second embodiment of the ion beam generator of the present invention.
  • FIG. 11 is a cross-sectional view schematically showing configurations of the extraction electrode 7 and the dispersion electrode 30 of this example, and the same reference numerals are given to the same portions as those in FIG.
  • the openings 76 of the extraction electrode 7 and the openings 66 of the dispersion electrode 30 are alternately arranged at the same pitch.
  • This example is an example in which the density of the openings 66 of the dispersion electrode 30 is larger than the density of the openings 76 of the extraction electrode 7. That is, the size and pitch of the openings 66 of the dispersion electrode 30 in this example are very small compared to the size and arrangement pitch of the openings 76 of the extraction electrode, and a plurality of openings 66 are provided in the openings 76. Is configured to be arranged.
  • the dispersive electrode 30 of this example has the same configuration as the dispersive electrode 30 of the first embodiment, and is configured so that only the opening size, the protrusion size, and the arrangement pitch are different.
  • ions drawn vertically from one opening 76 of the extraction electrode 7 reach the vicinity of the openings 66 and the protrusions 36 of the plurality of dispersion electrodes 30.
  • the electric field is formed only in the vicinity of the protrusion 36, so that the ion beam that reaches the opening 66 goes straight without receiving the electric field, but the ion beam that reaches the vicinity of the protrusion 36 is bent by the electric field. It is done. As a result, it is possible to obtain an ion beam having a wide range of tilt direction components including vertical to tilted components.
  • the surface of the substrate W is processed by irradiating one surface (surface to be processed) of the substrate W from the first ion beam generator 1a. Similarly, the other processed surface of the substrate W is processed by irradiating the other processed surface of the substrate W with the ion beam from the second ion beam generator 1b.
  • the first and second ion beam generators 1a and 1b are each a distributed electrode that disperses the angle of the ion beam that is extracted vertically and the extraction electrodes 7a and 7b that extract ions vertically. 30a and 30b are configured. As a result, ions can be uniformly incident on the substrate W to be processed, and a predetermined process can be performed.
  • An example of applying a surface treatment to the substrate by injecting an ion beam is, for example, an etching process, processing a film deposited on the substrate into a predetermined shape and processing the entire surface, and flattening the uneven surface formed on the substrate. Examples include processing.
  • FIG. 12 is a cross-sectional view schematically showing a step of finely processing a film deposited on the substrate into a predetermined shape by making an ion beam incident.
  • 12A and 12B show a processed shape when the ion beam is incident only from the vertical direction
  • FIGS. 12C and 12D show a case where the ion beam is tilted.
  • a photoresist 202 is formed in a predetermined shape by lithography on a processing target film 201 deposited on a processing target substrate W by sputtering or CVD.
  • the ion beam 203 is irradiated from the ion beam generator to process the film 201 to be processed.
  • vertical processing according to a designed pattern that is, more suited to a mask is desired in order to ensure the performance of the element.
  • the ion beam generator ions generated by introducing a predetermined gas into the plasma source are accelerated by the extraction electrode, and etching is performed by irradiating the substrate with the ion beam.
  • an inert gas such as Ar or He
  • the material to be treated is a so-called difficult dry etching material
  • a volatile product is formed by a chemical reaction between the material to be treated and active species generated by plasma.
  • the adhesive particles 204 are scattered from the substrate processing surface by sputtering.
  • the scattering direction of the particles is scattered with a certain distribution such as a distribution proportional to the cosine of the emission angle.
  • the pattern side surface deposited film 205 is formed by inhibiting the progress. Due to the deposited film 205, the pattern side wall has a tapered shape as shown in FIG. When etching is actually performed at such a normal incidence, a taper angle of approximately 75 ° or more cannot be obtained. When a beam having an ion incident angle of 0 ° is incident on the tapered sidewall, the ion incident angle on the sidewall surface becomes very large. For example, when the taper angle of the side wall is 75 °, according to FIG. 2 of the document “RE Lee: J. Vac. Sci. Technol., 16, 164 (1979)”, the ion incident angle on the side wall Is 75 °.
  • the taper angle refers to the angle formed between the side wall and the substrate surface
  • the ion incident angle refers to the angle at which the incident ion beam is inclined from the direction orthogonal to the incident surface.
  • the incident angle is 0 °.
  • the ion beam 206 when the tilted ion beam 206 is irradiated with an inclination of, for example, 15 ° (FIG. 12C), the ion beam has an ion incident angle of 60 ° with respect to a side surface having a taper angle of, for example, 75 °. Irradiated with. Further, the surface to be etched (substrate surface) is irradiated with an ion incident angle of 15 °. Therefore, according to the above document, the difference in the etching rate is significantly reduced as compared with the case where the ion beam is not inclined. Therefore, as shown in FIG. 12D, the etching of the sidewall of the film 201 to be processed progresses, and a more vertical etching side surface is obtained.
  • the ion beam incident on the substrate W after being tilted is further dispersed by the dispersive electrode, so that the ion beam incident direction is not biased and the surface treatment can be performed uniformly and efficiently. it can.
  • FIG. 13 shows an example of processing for flattening the uneven surface of the substrate surface using an obliquely incident ion beam generator and a vertically incident ion beam generator.
  • FIG. 13 shows an example of processing for flattening the uneven surface of the substrate surface using an obliquely incident ion beam generator and a vertically incident ion beam generator.
  • (A) to (C) are schematic cross-sectional views showing processing steps by a conventional ion beam vertical incidence apparatus, and (D) to (F) use an oblique incidence ion beam generator. It is a cross-sectional schematic diagram which shows a process process.
  • FIGS. 13A and 13D after a layer 208 to be processed is formed on the substrate W to be processed in advance, fine processing is performed by etching using a lithography method. Etching is performed by an obliquely incident ion beam as shown in FIGS. 12 (A) and 12 (B), for example. An embedded layer 209 is formed on the etched layer 208 by using, for example, a sputtering method. When film formation is performed by sputtering or the like, a step is generated on the surface of the buried layer 209 between a portion where the pattern exists and a portion where the pattern does not exist as shown in FIGS.
  • FIGS. 13B and 13C show changes in the surface shape when the ion beam 203 is vertically incident on the uneven surface.
  • the surface parallel to the substrate W is processed uniformly, but the tapered portion exhibits a shape in which the progress of etching is suppressed because the incident angle of the ion beam is very large.
  • the ion beam has an effect of selectively etching the corners of the protrusions, the shape of the protrusions is rounded, but a sufficient flattening effect cannot be obtained.
  • the step side wall is parallel to the substrate.
  • Etching can be performed at a significantly faster etching rate than the surface.
  • the side wall of the step has a taper of 75 °
  • the ion beam 206 is incident at an angle of 60 °
  • the ion beam having an ion incident angle of 15 ° is irradiated onto the side wall surface of the step.
  • the incident angle of the ion beam to the surface parallel to the substrate W is 60 °, and according to the above document, the stepped surface is etched at a significantly high etching rate.
  • the ion beam incident on the substrate W after being tilted is further dispersed by the dispersive electrode, so that the ion beam incident direction is not biased and the surface treatment can be performed uniformly and efficiently. it can.
  • a substrate rotation mechanism may be provided in order to equalize the temporal average value of ion incident angle dispersion.
  • a portion where the incidence of the ion beam is hindered by the mechanism is generated, or it is necessary to provide a sliding portion on the outer peripheral portion of the substrate as shown in FIG. 5 of Japanese Patent Laid-Open No. 2008-117753.
  • Providing the sliding portion on the outer peripheral portion of the substrate leads to an unnecessary particle adhering to the substrate and significantly hindering the yield.
  • a very large structure is required to rotate the substrate without obstructing the ion beam and without having the sliding portion on the substrate portion.
  • the ion beam generator of the present invention since the ion beam is dispersed in multiple directions, it is necessary to provide a substrate rotation mechanism or the like as described above to equalize the temporal average value of ion incident angle dispersion. There is no.
  • the ion beam generators 1a and 1b facing each other bend the vertical ion beam extracted from the extraction electrode 7 into ion beams in a plurality of directions.
  • Dispersion electrodes 30 for dispersion are provided.
  • a generator can be constructed.
  • the ion beam generator of the present invention is preferably applied to the case where fine processing or planarization is performed by etching the substrate surface in the manufacturing process of the electronic device.
  • FIG. 14 is a schematic diagram of a discrete track media processing film forming apparatus, which is a manufacturing apparatus when a substrate processing apparatus provided with an ion beam generator of the present invention is used for manufacturing a magnetic recording medium.
  • the manufacturing apparatus of this example is an in-line manufacturing apparatus in which a plurality of evacuable chambers 111 to 121 are connected and arranged in an endless square shape. In each of the chambers 111 to 121, a transport path for transporting the substrate to the adjacent vacuum chamber is formed, and the substrate is sequentially processed in each vacuum chamber as it circulates in the manufacturing apparatus.
  • the substrate is changed in the transfer direction in the direction changing chambers 151 to 154, and the transfer direction of the substrate that has been linearly transferred between the chambers is rotated by 90 ° and delivered to the next chamber.
  • the substrate is introduced into the manufacturing apparatus by the load lock chamber 145, and when the processing is completed, the substrate is unloaded from the manufacturing apparatus by the unload lock chamber 146.
  • a plurality of chambers capable of performing the same process may be arranged in succession, and the same process may be performed in a plurality of times. Thus, time-consuming processing can be performed without increasing the tact time.
  • only a plurality of chambers 121 are arranged, but a plurality of other chambers may be arranged.
  • FIG. 15 and FIG. 16 are cross-sectional views schematically showing a process of processing a laminated body by the manufacturing apparatus of this example.
  • FIG. 15A is a cross-sectional view of a stacked body that is processed by the manufacturing apparatus of this example.
  • a laminate is formed on both surfaces of the substrate 301.
  • the laminate formed on one surface of the substrate 301 is simplified. Paying attention to the treatment, the laminate formed on the other surface and the treatment to the laminate are omitted.
  • the laminate 300 is in the process of being processed into DTM (Discrete Track Media), and includes a substrate 301, a soft magnetic layer 302, an underlayer 303, a recording magnetic layer 304, A mask 305 and a resist layer 306 are provided.
  • DTM Discrete Track Media
  • Such a laminated body 300 is introduced into the manufacturing apparatus shown in FIG.
  • the substrate 301 for example, a glass substrate or an aluminum substrate having a diameter of 2.5 inches (65 mm) can be used.
  • the soft magnetic layer 302, the underlayer 303, the recording magnetic layer 304, the mask 305, and the resist layer 306 are formed on both opposing surfaces of the substrate 301, but for the sake of simplifying the drawing and description as described above.
  • the laminate formed on one side of the substrate 301 is omitted.
  • the soft magnetic layer 302 serves as a yoke for the recording magnetic layer 304 and includes a soft magnetic material such as an Fe alloy or a Co alloy.
  • the underlayer 303 is a layer for vertically aligning the easy axis of the recording magnetic layer 304 (the stacking direction of the stacked body 300), and includes a stacked body of Ru and Ta.
  • the recording magnetic layer 304 is a layer that is magnetized in a direction perpendicular to the substrate 301 and contains a Co alloy or the like.
  • the mask 305 is for forming a groove in the recording magnetic layer 304, and diamond-like carbon (DLC) or the like can be used.
  • the resist layer 306 is a layer for transferring the groove pattern to the recording magnetic layer 304.
  • the groove pattern is transferred to the resist layer by the nanoimprint method and introduced into the manufacturing apparatus shown in FIG. 14 in this state. Note that the groove pattern may be transferred by exposure and development, regardless of the nanoimprint method.
  • the groove of the resist layer 306 is removed by reactive ion etching in the first chamber 111, and then the mask 305 exposed in the groove is removed by reactive ion etching in the second chamber 112.
  • a cross section of the stacked body 300 at this time is illustrated in FIG.
  • the recording magnetic layer 304 exposed in the groove is removed by ion beam etching in the third chamber 113, and the recording magnetic layer 304 is formed as an uneven pattern in which the tracks are spaced apart in the radial direction as shown in FIG. .
  • the pitch (groove width + track width) at this time is 70 to 100 nm
  • the groove width is 20 to 50 nm
  • the thickness of the recording magnetic layer 304 is 4 to 20 nm.
  • the step of forming the recording magnetic layer 304 with a concavo-convex pattern is performed. Thereafter, in the fourth chamber 114 and the fifth chamber 115, the mask 305 remaining on the surface of the recording magnetic layer 304 is removed by reactive ion etching. Thus, the recording magnetic layer 304 is exposed as shown in FIG.
  • the concave portion of the recording magnetic layer 304 is formed as shown in FIG.
  • a buried layer 309 is formed on the surface of the groove 307.
  • the buried layer forming chamber 117 functions as a second deposition chamber for depositing and filling the buried layer 309 made of a nonmagnetic material on the recording magnetic layer 304.
  • the buried layer 309 is a nonmagnetic material that does not affect recording or reading on the recording magnetic layer 304, and for example, Cr, Ti, or an alloy thereof (for example, CrTi) can be used. Even if the nonmagnetic material includes a ferromagnetic material, it may be any material as long as it has lost its properties as a ferromagnetic material as a whole by including other diamagnetic materials or nonmagnetic materials.
  • the method for forming the buried layer 309 is not particularly limited, but in this example, a bias voltage is applied to the stacked body 300 and RF-sputtering is performed. By applying the bias voltage in this way, the sputtered particles are drawn into the groove 307 and the generation of voids is prevented.
  • a bias voltage is applied to the stacked body 300 and RF-sputtering is performed.
  • the bias voltage By applying the bias voltage in this way, the sputtered particles are drawn into the groove 307 and the generation of voids is prevented.
  • a DC voltage, an AC voltage, or a DC pulse voltage can be applied as the bias voltage.
  • the pressure condition is not particularly limited, but the embedding property is good when the pressure is relatively high, for example, 3 to 10 Pa.
  • the convex portion 308 on which the filling material can be easily laminated as compared with the groove 307 can be etched simultaneously with the film formation using the ionized discharge gas. Therefore, a difference in film thickness laminated on the groove 307 and the convex portion 308 can be suppressed.
  • the embedding material may be laminated in the groove 307 that is the concave portion by using collimated sputtering or low-pressure remote sputtering, but by using the method of this example, the distance between the substrate 301 and the target can be shortened.
  • the device can be miniaturized.
  • an etching stop layer may be formed before the buried layer 309 is formed.
  • a material having an etching rate lower than that of the buried layer 309 may be selected with respect to the upper buried layer 309 under the planarization conditions described later.
  • a function of suppressing damage to the recording magnetic layer 304 due to excessive progress of etching during planarization can be provided.
  • the bias voltage at the time of forming the buried layer 309 in the subsequent process can be effectively functioned, and the generation of the voids can be effectively suppressed.
  • FIG. 14 shows the structure including the etching stop layer deposition chamber 116.
  • the surface after the embedded film formation is generally embedded on fine irregularities, but is lower than the flat surface as described above. If the film thickness of the buried layer is not sufficient on the fine irregularities, minute irregularities may remain.
  • the buried layer 309 is slightly left on the recording magnetic layer 304, and the buried layer 309 is removed.
  • the buried layer 309 is removed by ion beam etching using an inert gas such as Ar gas as an ion source.
  • the step formed on the surface is effectively flattened by irradiating a tilted ion beam using the ion beam generator of the present invention.
  • the first etching chamber 118 includes the ion beam generators 1a and 1b of the present invention illustrated in FIG.
  • the first etching chamber 118 is a chamber for removing a part of the buried layer 309 by ion beam etching.
  • the chamber pressure is 1.0 ⁇ 10 ⁇ 1 Pa or less
  • the electrode 73 voltage is +500 V or more
  • the electrode 72 voltage is ⁇ 500 V to ⁇ 2000 V
  • ICP inductively coupled plasma
  • the RF power during discharge is about 200 W.
  • FIG. 14 also shows a second etching chamber 119 for removing the etching stop layer (not shown).
  • This etching chamber is constituted by a mechanism that uses ICP plasma by a reactive gas and applies a bias such as DC, RF, and DC pulse to the carrier.
  • a DLC layer 310 is formed over the planarized surface.
  • this film formation is performed in the protective film formation chamber 121 after adjusting to a temperature necessary for forming DLC in the heating chamber 120 or the cooling chamber.
  • the film formation conditions are, for example, parallel plate CVD, high-frequency power of 2000 W, pulse-DC bias of -250 V, substrate temperature of 150 to 200 ° C., chamber pressure of about 3.0 Pa, gas of C 2 H 4 , The flow rate can be 250 sccm. ICP-CVD may be used.
  • the mask 305 is carbon
  • a method of leaving the mask 305 instead of forming an etching stop layer may be used.
  • the thickness of the mask 305 varies due to the etching twice for removing the resist layer 306 and the etching for removing the surplus buried layer 309. Therefore, it is preferable to remove the mask 305 and re-form the etching stop layer as in the above embodiment.
  • an etching stop layer can also be formed on the bottom and wall surfaces of the groove 307, and it is preferable to use a conductive material for the etching stop layer because a bias voltage can be easily applied as described above.
  • the present invention is not limited to this.
  • the present invention can also be applied to the case where the buried layer 309 is formed in a concavo-convex pattern of BPM interspersed with the recording magnetic layer 304.
  • the present invention can be applied not only to the exemplified substrate processing apparatus (magnetron sputtering apparatus) but also to plasma processing apparatuses such as a dry etching apparatus, a plasma asher apparatus, a CVD apparatus, and a liquid crystal display manufacturing apparatus.
  • plasma processing apparatuses such as a dry etching apparatus, a plasma asher apparatus, a CVD apparatus, and a liquid crystal display manufacturing apparatus.
  • examples of electronic devices that can be used for manufacturing the ion beam generator of the present invention include semiconductors and magnetic recording media.
  • 1, 1a, 1b ion beam generator, 2, 2a, 2b: discharge tank, 7, 71, 72, 73: extraction electrode, 20: substrate holder, 30, 30a, 30b: dispersion electrode, 31: first dispersion Electrode, 31a: second opening, 32: second dispersion electrode, 32a: third opening, 33: third dispersion electrode, 33a: fourth opening, 36: protrusion, 47: ion beam, 66: dispersion Opening of electrode, 67: First opening, 76: Opening of extraction electrode, 77: Ion beam

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Abstract

La présente invention concerne un appareil de génération de faisceau d'ions, permettant de traiter uniformément un substrat par dispersion de faisceaux d'ions arrachés d'une chambre à plasma, et de réduire les écarts en direction de faisceaux d'ions pénétrant dans un substrat. Les faisceaux d'ions arrachés linéairement d'une cellule de décharge (2) par une électrode d'arrachage (7) sont dispersés en une pluralité de directions par une électrode de dispersion (30) formée à l'avant de l'électrode d'arrachage (7), et entraînés à pénétrer dans un substrat (W) dans un état incliné à travers une pluralité de sections d'ouverture (66) formées sur l'électrode de dispersion (30).
PCT/JP2011/001249 2010-03-11 2011-03-03 Appareil de génération de faisceau d'ions, appareil de traitement de substrat, et procédé de fabrication de dispositif électronique utilisant lesdits appareils WO2011111343A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106876232A (zh) * 2017-03-31 2017-06-20 上海伟钊光学科技股份有限公司 具有预错位栅孔离子引出栅极板的离子源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07320670A (ja) * 1993-03-10 1995-12-08 Hitachi Ltd 集束イオンビーム発生手段を用いた処理方法及びその装置
JPH11503560A (ja) * 1996-01-23 1999-03-26 フラウンホーファー ゲゼルシャフト ツア フォルデルンク デア アンゲヴァンテン フォルシュンク エー ファウ イオンの広範囲注入のためのデバイス
JPH11329334A (ja) * 1998-05-20 1999-11-30 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2005183331A (ja) * 2003-12-24 2005-07-07 Murata Mfg Co Ltd イオン源装置、及び電子部品の製造方法
JP2008117753A (ja) * 2006-10-12 2008-05-22 Tdk Corp イオンガン、イオンビームエッチング装置、イオンビームエッチング設備、エッチング方法及び磁気記録媒体の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07320670A (ja) * 1993-03-10 1995-12-08 Hitachi Ltd 集束イオンビーム発生手段を用いた処理方法及びその装置
JPH11503560A (ja) * 1996-01-23 1999-03-26 フラウンホーファー ゲゼルシャフト ツア フォルデルンク デア アンゲヴァンテン フォルシュンク エー ファウ イオンの広範囲注入のためのデバイス
JPH11329334A (ja) * 1998-05-20 1999-11-30 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2005183331A (ja) * 2003-12-24 2005-07-07 Murata Mfg Co Ltd イオン源装置、及び電子部品の製造方法
JP2008117753A (ja) * 2006-10-12 2008-05-22 Tdk Corp イオンガン、イオンビームエッチング装置、イオンビームエッチング設備、エッチング方法及び磁気記録媒体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106876232A (zh) * 2017-03-31 2017-06-20 上海伟钊光学科技股份有限公司 具有预错位栅孔离子引出栅极板的离子源

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