WO2011096580A1 - Corps plan transparent et interrupteur tactile transparent - Google Patents

Corps plan transparent et interrupteur tactile transparent Download PDF

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Publication number
WO2011096580A1
WO2011096580A1 PCT/JP2011/052669 JP2011052669W WO2011096580A1 WO 2011096580 A1 WO2011096580 A1 WO 2011096580A1 JP 2011052669 W JP2011052669 W JP 2011052669W WO 2011096580 A1 WO2011096580 A1 WO 2011096580A1
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Prior art keywords
layer
transparent
transparent conductive
refractive
thickness
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PCT/JP2011/052669
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English (en)
Inventor
Shuji Furukawa
Atsushi Yamashita
Reiko Onodera
Satomi Miyazaki
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Gunze Limited
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Priority to JP2012524982A priority Critical patent/JP5131628B1/ja
Publication of WO2011096580A1 publication Critical patent/WO2011096580A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels

Definitions

  • the present invention relates to a transparent planar body and a transparent touch switch.
  • a capacitive touch switch for detecting the location of input.
  • a capacitive touch switch is known.
  • a touch switch disclosed in Patent Document 1 comprises a dielectric layer lying between a pair of transparent planar bodies each provided with a transparent electric conductor patterned into a predetermined shape.
  • a finger or the like touches the operation surface, utilizing the change in capacitance caused by grounding through the human body, the touch location can be detected.
  • Patent Document 1 JP-A-2003-173238 (Figs. 1 and 5)
  • Such a touch switch is mounted on the surface of a liquid crystal display, CRT, or the like.
  • the pattern shape of the transparent electric conductor formed in the transparent planar body is conspicuous, resulting in reduced visibility.
  • Such a problem is present not only in capacitive touch switches but also in touch switches with a matrix pattern, etc .
  • an object of the invention is to provide a transparent planar body and a transparent touch switch, which are capable of providing improved visibility.
  • a transparent planar body comprising a silicon-containing layer; an adhesive layer disposed on at least one side of the silicon-containing layer; and a patterned transparent conductive layer disposed between the silicon-containing layer and the adhesive layer.
  • the difference between the maximum and minimum of the absolute value is 0.65 or less at 450 nm to 700 ran.
  • the silicon-containing layer includes a low-refractive-index layer and a high-refractive-index layer having a higher optical refractive index than the low-refractive-index layer, and the transparent conductive layer is formed on the low-refractive-index-layer side of the silicon-containing layer.
  • the low-refractive-index layer has an optical refractive index of 1.45 to 1.47, and the high-refractive-index layer has an optical refractive index of more than 1.47 and not more than 1.53.
  • the low-refractive-index layer is made of Si0 2
  • the high-refractive-index layer is made of a glass material.
  • the transparent conductive layer has a thickness of 12 nm or less.
  • the transparent conductive layer has a thickness of 12 nm or more and 14nm or less, and the low-refractive-index layer has a thickness of 10 nm to 45 nm.
  • the thickness of the low-refractive-index layer is not greater than the value calculated by the following equation 1: Equation 1: 0.3409X 2 - 16.705X + 217.73
  • X represents the thickness of the transparent conductive layer.
  • the thickness of the low-refractive-index layer is not greater than the value calculated by the following equation 2 :
  • Equation 2 -10X + 185
  • -X represents the thickness of the transparent conductive layer.
  • the object of the present invention can also be achieved by a transparent touch switch comprising the above transparent planar body, the transparent planar body being arranged in such a manner that the transparent conductive layer of the transparent planar body and a second transparent conductive layer that is different from the transparent conductive layer of the transparent planar body face each other or face the same direction.
  • a transparent planar body and a transparent touch switch which are capable of providing improved visibility, can be provided.
  • Fig. 1 a schematic cross-sectional view of a transparent touch switch according to an embodiment of the invention.
  • Fig. 2 is a plane view of a portion of the transparent touch switch shown in Fig. 1.
  • Fig. 3 is a plane view of another portion of the transparent touch switch shown in Fig. 1.
  • Fig. 4 is a plane view of a portion of a variation of the transparent touch switch shown in Fig. 1.
  • Fig. 5 is a plane view showing another portion of the variation of the transparent touch switch shown in Fig. 1.
  • Fig. 6 is a schematic cross-sectional view of a transparent planar body forming the transparent touch switch shown in Fig. 1.
  • Fig. 7 shows the results of measurement of the difference in reflectance depending on the presence of a transparent conductive layer in a sample.
  • Fig.8 shows the results of simulation of the difference in reflectance depending on the presence of a transparent conductive layer when the transparent conductive layer thickness is 8 nm.
  • Fig. 9 shows the results of simulation of the difference in reflectance depending on the presence of a transparent conductive layer when the transparent conductive layer thickness is 10 nm.
  • Fig. 10 shows the results of simulation of the difference in reflectance depending on the presence of a transparent conductive layer when the transparent conductive layer thickness is 12 nm.
  • Fig. 11 shows the results of simulation of the difference in reflectance depending -on the presence of a transparent conductive layer when the transparent conductive layer thickness is 14 nm.
  • Fig. 12 is a graph showing the ' relation between the thickness of a low-refractive-index layer that allows the difference between the maximum and minimum of the reflectance difference to be 0.65 or less or 0.5 or less and the thickness of a transparent conductive layer.
  • Fig. 13 is a graph showing the relation between the thickness of a low-refractive-index layer that allows where the maximum of the reflectance difference to be. 0.8 or less or 0.7 or less and the thickness of a transparent conductive layer.
  • Fig. 1 is a schematic cross-sectional view of a transparent touch switch according to one embodiment of the invention.
  • the transparent touch switch 101 is a capacitive touch switch, and includes a first transparent planar body 1 and a second transparent planar body 2.
  • the first transparent planar body 1 includes a transparent silicon-containing layer 11, an adhesive layer 13 disposed on at least one side of the silicon-containing layer 11, and a patterned transparent conductive layer 12 disposed between the silicon-containing layer 11 and the adhesive layer 13.
  • the second transparent planar body 2 includes a patterned transparent conductive layer 22 on one side of a transparent substrate 21.
  • the first transparent planar body 1 and the second transparent planar body 2 are arranged in such a manner that the transparent conductive layers 12 and 22 face each other. They may also be arranged in such a manner that the transparent .conductive layers 12 and 22 face the same direction.
  • the silicon-containing layer 11 includes a low-refractive-index layer 111 and a high-refractive-index layer 112 having a higher optical refractive index than the low-refractive-index layer 111.
  • the transparent conductive layer 12 is formed on the low-refractive-index-layer-111 side of the silicon-containing layer 11.
  • the low-refractive-index layer 111 may be made of Si0 2 , for example.
  • the low-refractive-index layer 111 preferably has an optical refractive index within a range of 1.45 to 1.47.
  • the high-refractive-index layer 112 may be made of a glass material, such as soda glass, alkali-free glass, or borosilicate glass, for example.
  • the thickness of the high-refractive-index layer 112 is not limited. However, it is preferable that the high-refractive-index layer 112 has a thickness of about 0.3 to about 5.0 mm and an optical refractive index of more than 1.47 and not more than 1.53. If the surface of the silicon-containing layer 11 is to be touched by a pen or a finger, such a surface maybe treated for improving transparency, abrasion resistance, wear resistance, and non-glare properties. It is also possible to put a film thereon for preventing cracks.
  • the transparent substrate 21 is preferably made of a highly transparent material.
  • a highly transparent material include flexible films of polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN) , polyethersulfone (PES), , polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP), polyamide (PA), polyacryl (PAC) , acryl, amorphous polyolefinic resins, cyclic polyolefinic resins, alicyclic polyolefins, transparent thermoplastic norbornene resins, and the like; laminates of two or more kinds thereof; glass; etc.
  • Examples of materials for the transparent conductive layers 12 and 22 include transparent conductive materials such as indium tin oxide (ITO) , indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, potassium-doped zinc oxide, silicon-doped zinc oxide, zinc-oxide- and tin-oxide-based materials, indium-oxide- and tin-oxide-based materials, zinc-oxide-, indium-oxide-, and magnesium-oxide-based materials, zinc oxide, and tin oxide films; metal materials such as tin, copper, aluminum, nickel, and chromium; and metal oxide materials. Combined use of two or more kinds of these materials is also possible.
  • ITO indium tin oxide
  • ITO indium tin oxide
  • antimony-doped tin oxide fluorine-doped tin oxide
  • aluminum-doped zinc oxide potassium-doped zinc oxide
  • Elemental metals sensitive to acid and alkali may also be used as conductive materials .
  • the transparent conductive layers 12 and 22 can be formed by a PVD method, such as sputtering, vacuum deposition, or ion plating, a CVD method, a coating method, a printing method, etc., for example.
  • the transparent conductive layers 12 and 22 each preferably have a thickness of 14 nm or less, andmore preferably 12 nm or less. When the thickness is 5 nm or less, such a layer is less likely to be a continuous film, making it difficult to form a stable conductive layer.
  • a material for a transparent conductive layer a composite material prepared by dispersing ultrafine conductive carbon fibers, such as carbon nanotubes, carbon nanohorns, carbon nanowires, carbon nanofibers, or graphite fibrils, in a non-conductive polymer material.
  • the transparent conductive layers 12 and 22 are formed as assemblies of a plurality of parallel, belt-like conductive members 12a and 22a, respectively.
  • the belt-like conductive members 12a and 22a of the transparent conductive layers 12 and 22 are arranged orthogonal to each other.
  • the transparent conductive layers 12 and 22 are connected to an external drive circuit (not illustrated) via a routing circuit (not illustrated) made bf conductive ink, etc.
  • the pattern shapes of the transparent conductive films 12 and 22 are not limited to those described in this embodiment, and any shapes are possible as long as the finger contact area, for example, can be detected. For example, as shown in Figs.
  • the transparent conductive films 12 and 22 may be configured to include a plurality of linearly connected, diamond-shaped conductive members 12b and 22b, respectively. They may be arranged in such a manner that the direction in which the diamond-shaped conductive members 12b of the transparent conductive layer 12 are connected is orthogonal to the direction in which the diamond-shaped conductive members 22b of the transparent conductive layer 22 are connected, and also that, in plane view, upper and lower diamond-shaped conductive members 12b/22b do not overlap each other.
  • the operation performance such as resolution, of the transparent touch switch 101
  • the configuration having a plurality of linearly connected, diamond-shaped conductive members 12b and 22b is preferred to a configuration having rectangular pattern shapes .
  • the transparent conductive layers 12 and 22 can be patterned as follows. A mask portion having a desired pattern shape is formed on the surface of each of the transparent conductive films 12 and 22 formed on a silicon-containing layer and a transparent substrate, respectively, and exposed portions are removed by etching with an acid liquid or the like. The mask portion is then dissolved by an alkaline liquid, etc.
  • the adhesive layer 13 may be made of an ordinary transparent adhesive, such an epoxy-based or acrylic adhesive, and may include a core material formed of a transparent film of a norbornene resin.
  • the adhesive layer may be formed by stacking several sheets of an adhesive material or by stacking sheets of several kinds of adhesive materials .
  • the thickness of the adhesive layer 13 is not limited. In practical application, the thickness is preferably 100 ⁇ or less, and particularly preferably 25 to 75 ⁇ .
  • the adhesive layer preferably has an optical refractive index of 1.40 to 1.70, andmore preferably 1.46 to 1.57.
  • the difference in refractive index at the interface decreases, resulting in improved effects in making the pattern shape inconspicuous .
  • the adhesive layer in order to increase the refractive index of the adhesive layer, it is neccessary to add particulates of a high-refractive-index material thereto, for example, and this causes a problem in that the transmittance as a transparent planar body decreases.
  • the adhesive layer preferably contains no material that may damage the transparent conductive layer, such as acid.
  • the method for detecting the touch location is the same in known capacitive touch switches .
  • the transparent conductive layers 12 and 22 are grounded through the capacitance of the human body at the touch location, and the value of current flowing through the transparent conductive layers 12 and 22 is detected, thereby calculating the coordinates of the touch location.
  • the difference between the maximum ' and minimum of the absolute value is 0.65 or less, more preferably 0.5 or less, and still more preferably 0.4 or less, at a wavelength in the visible range, 450 nm to 700 nm.
  • the difference between the maximum and the minimum is 0.65 or less, the pattern shape of the transparent conductive layer 12 can be made inconspicuous, thereby improving visibility.
  • the present inventors produced samples of transparent planar bodies configured as above. With respect to the absolute value of the difference between the reflectance of a pattern-forming region, where the transparent conductive layer 12 was formed, at each wavelength of reflection LI of light applied thereto through the silicon-containing layer 11 and the reflectance of a pattern-non-forming region, where the transparent conductive layer 12 was not formed, at each wavelength of reflection L2 of light applied thereto through the silicon-containing layer 11, the difference between the maximum and the minimum of the absolute value was measured. The maximum of the reflectance difference was also measured. At the same time, sensory testing was performed to determine whether the pattern shape of the transparent conductive layer 12 was conspicuous.
  • the samples have a structure as shown in Fig. 6.
  • the high-refractive-index layer 112 and the low-refractive-index layer 111 forming the silicon-containing layer 11 were formed of a soda glass plate and a Si0 2 thin film, respectively.
  • An ITO film was employed as the transparent conductive layer 12, and a film made of an acrylic pressure sensitive adhesive (refractive index: 1.52) was employed as the adhesive layer 13.
  • the samples were thus configured. Five kinds of samples were prepared, varying the thickness of the transparent conductive layer 12 (ITO film) (8 nm, 10 nm, 12 nm, 14 nm, 16 nm) .
  • the thickness of the high-refractive-index layer 112 was 1.1 mm
  • the thickness of the low-refractive-index layer 111 was 12.5 nm
  • the thickness of the adhesive layer 13 was 25 ⁇ .
  • the low-refractive-index layer 111 (Si0 2 thin film) and the transparent conductive layer 12 (ITO film) were deposited by sputtering on the glass plate.
  • spectral reflectance For the measurement of spectral reflectance, an apparatus manufactured by JASCO (V670+ integrating sphere unit) was used. The measurement conditions were as follows: photometry mode: %R, measurement range: 800 to 300 nm, data collection interval: 5 nm, UV/Vis bandwidth: 5.0 nm, NIR bandwidth: 2.0 nm, response: Medium, scattering rate: 400 nm/min, light source switching: 340 nm, diffraction grating switching: 850 nm, light source: D2/WI, filter switching: step, correction: baseline.
  • the maximum and minimum of the absolute value of the difference between the above-obtained first spectral reflectance and second spectral reflectance were calculated. The difference between the maximum and the minimum was also calculated. Table 1 shows the difference between the maximum and the minimum (reflectance difference ⁇ ) , as well as the maximum of the reflectance difference, obtained by calculation.
  • the surface resistance (Rs) of each sample is also shown in Table 1. Surface resistance (Rs) was measured using a resistivity meter Loresta EP MCP-T360 manufactured by MITSUBISHI CHEMICAL ANALYTECH. Table 1 also shows the results of sensory testing for each sample about the conspicuousness of the pattern shape. The test was performed under an ordinary fluorescent lamp in a room and under a three-band fluorescent lamp in a booth covered with a black sheet .
  • the results in Table 1 show that when the thickness of the transparent conductive layer 12 (ITO film) is 8 nm, 10 nm, or 12 nm, the pattern shape of the transparent conductive layer 12 (ITO film) is barely noticeable, achieving excellent visibility .
  • Fig.7 shows that in such cases, at a wavelength in the visible range, 450 nm to 700 nm, the difference (reflectance difference ⁇ ) between the maximum and minimum of the absolute value of the difference between the first spectral reflectance and the second spectral reflectance is 0.5 or less, and the absolute value of the difference between the first spectral reflectance and the second spectral reflectance is 0.7 or less.
  • the thickness of the transparent conductive layer 12 is 14 nm
  • the pattern shape is recognizable under severe evaluation conditions, i.e., under a three-band fluorescent lamp
  • the pattern shape is barely visible under an ordinary fluorescent lamp.
  • the reflectance difference ⁇ is 0.65 or less
  • the absolute value of the difference between the first spectral reflectance and the second spectral reflectance is 0.8 or less
  • practically usable visibility is achieved.
  • the results also show that in the case where the thickness of the ITO film is 16 nm, where the reflectance difference ⁇ is more than 0.65 and the absolute value of the difference between the first spectral reflectance and the second spectral reflectance is more than 0.8, poor visibility is resulted.
  • the surface resistance (Rs) increases with a decrease in the thickness of the transparent conductive layer 12 (ITO film) .
  • the thickness of the transparent conductive layer 12 (ITO film) is particularly preferably 8 nm or more.
  • the present inventors simulated a transparent planar body configured as above.
  • the model used in the simulation has a structure as shown in Fig. 6, and the settings for the simulation were as follows.
  • the silicon-containing layer 11 was formed to include a low-refractive-index layer 111 made of Si0 2 (optical refractive index: 1.46) and a high-refractive-index layer 112 made of soda glass (optical refractive index: 1.52) .
  • the transparent conductive layer 12 was an ITO film (optical refractive index: 2.0) .
  • the adhesive layer 13 was made of an acrylic pressure sensitive adhesive (optical refractive index: 1.52).
  • the thickness of the transparent conductive layer 12 (ITO film) and the thickness of the low-refractive-index layer 111 of the silicon-containing layer 11 were each varied, and the difference in light reflectance (%) between the part in which the transparent conductive layer 12 was formed (pattern-forming region) and the part in which the transparent conductive layer 12 was not formed (pattern-non-forming region) was determined by the simulation.
  • the reflectance was calculated using a thin-film designing software (OPTAS-FILM) manufactured by CYBERNET SYSTEMS .
  • the high-refractive-index layer 112 of the silicon-containing layer 11 and the adhesive layer 13 are members of much greater thickness; in this simulation, reflectance was calculated assuming the thickness of such a member as ⁇ (infinite) .
  • the inconspicuousness of the pattern shape of a transparent conductive layer 12 is correlated to the difference in reflectance between the part in which the transparent conductive film 12 is formed and the part in which it is not formed.
  • the maximum of the reflectance difference is 0.8 or less, good visibility can be achieved. A maximum of 0.7 or less provides better visibility, and a maximum of 0.5 or less provides even better visibility.
  • the pattern shape of the transparent conductive layer is even less conspicuous, resulting in even better visibility.
  • Fig. 8 shows the results of simulation where the thickness of the transparent conductive layer 12 (ITO film) was 8 nm, and the thickness of the low-refractive-index layer 111 (Si0 2 film) of the silicon-containing layer 11 ' was varied (0 nm, 10 nm, 20 nm, 30 nm) .
  • Fig. 9 shows the results of simulation where the thickness of the transparent conductive layer 12 (ITO film) was 10 nm, and the thickness of the low-refractive-index layer 111 (Si0 2 film) of the silicon-containing layer 11 was varied (0 nm, 10 nm, 20 rati, 30 nm) .
  • Fig. 9 shows the results of simulation where the thickness of the transparent conductive layer 12 (ITO film) was 10 nm, and the thickness of the low-refractive-index layer 111 (Si0 2 film) of the silicon-containing layer 11 was varied (0 nm, 10 nm, 20 rati, 30 nm) .
  • FIG. 10 shows the results of simulation where the thickness of the transparent conductive layer 12 (ITO film) was 12 nm, and the thickness of the low-refractive-index layer 111 (Si0 2 film) of the silicon-containing layer 11 was varied (0 nm, 10 nm, 20 nm, 30 nm) .
  • Fig. 11 shows the results of simulation where the thickness of the transparent conductive layer 12 (ITO film) was 14 nm, and the thickness of the low-refractive-index layer 111 (Si0 2 film) of the silicon-containing layer 11 was varied (0 nm, 10 nm, 20 nm, 30 nm) .
  • Table 2 shows the difference between the maximum and minimum of the reflectance difference at a wavelength in the visible range, 450 nm to 700 nm, which was derived from the simulation results shown in Figs. 8 to 11.
  • the maximum of the reflectance difference is the value of reflectance difference at a wavelength of 450 nm
  • the minimum of the reflectance difference is the value of reflectance difference at a wavelength of 700 nm.
  • Table 3 shows the derived maximum of the reflectance difference at a wavelength in the visible range, 450 nm to 700 nm.
  • Figs. 8 to 11 and Tables 2 and 3 show that in the case where the thickness of the transparent conductive layer 12 (ITO film) is 14 nm, when the thickness of the low-refractive-index layer 111 (Si0 2 film) is within a range of 0 to 30 nm, the difference between the maximum and minimum of the reflectance difference is 0.65 or less.
  • the results show that when the thickness of the low-refractive-index layer 111 (Si0 2 film) is 10 nm, 20 nm, or 30 nm, the maximum of the reflectance difference is 0.8 or less, while when the thickness of the low-refractive-index layer 111 (Si0 2 film) is 0 nm, the maximum of the reflectance difference is more than 0.8.
  • the thickness of the low-refractive-index layer 111 (Si0 2 film) was further varied, and the maximum thickness of the low-refractive-index layer 111 (Si0 2 film) that ' allowed the difference between the maximum and minimum of the reflectance difference to be 0.65 or less was calculated by the above simulation.
  • Table 4 shows the derived difference between the maximum and minimum of the reflectance difference at a wavelength in the visible range, 450 nm to 700 nm.
  • Table 4 shows that the maximum thickness of the low-refractive-index layer 111 (Si0 2 film) that allows the difference between the maximum and minimum of the reflectance difference to be 0.65 or less is about 85 nm when the thickness of the transparent conductive layer 12 (ITO film) is 10 nm, while it is about 65 nm when the thickness of the transparent conductive layer 12 (ITO film) is 12 nm. It is also shown that the maximum thickness is 60 nm when the thickness of the transparent conductive layer 12 (ITO film) is 13 nm, while it is 50 nm when the thickness of the transparent conductive layer 12 (ITO film) is 14 nm.
  • Fig. 12 shows the ' relation between the maximum thickness of a low-refractive-index layer 111 (Si0 2 film) that allows the difference between the maximum and minimum of the reflectance difference to be 0.65 or less and the thickness of the transparent conductive layer 12 (ITO film) , plotting the maximum thickness on the ordinate and the thickness of the transparent conductive layer 12 (ITO film) on the abscissa.
  • Fig. 12 also shows approximate curves obtained from the relation between the maximum thickness and the thickness of the transparent conductive layer 12 (ITO film) .
  • Fig. 12 also shows the relation between the maximum thickness of a low-refractive-index layer 111 (Si0 2 film) that allows the difference between the maximum and minimum of the reflectance difference to be 0.5 or less and the thickness of the transparent conductive layer 12 (ITO film), as well as approximate curves obtained from the relation.
  • Si0 2 film a low-refractive-index layer 111
  • ITO film transparent conductive layer 12
  • the difference between the maximum and minimum of the difference in reflectance at each wavelength between the part in which the transparent conductive layer 12 is formed (pattern-forming region) and the part in which the transparent conductive layer 12 is not formed (pattern-non-forming region) can be 0.65 or less. Therefore, in a transparent touch switch 101 configured as shown in Fig. 1, in relation with the thickness of a transparent conductive layer 12, by forming a low-refractive-index layer 111 to have a thickness not greater than the value calculated by the equation 1, the transparent touch switch 101 can be provided with excellent visibility, where the pattern shape of the transparent conductive layer 12 is inconspicuous.
  • the maximum thickness of a low-refractive-index layer 111 (Si0 2 film) that allowed the maximum of the reflectance difference at a wavelength in the visible range, 450 nm to 700 nm, to be 0.8 or less was also calculated by the simulation. The results are shown in Table 5. With an increase in the thickness of the low-refractive-index layer 111 (Si0 2 film) , the maximum of the reflectance difference changes from a downward trend to an upward trend. Therefore, the calculation of the maximum of the reflectance difference is partially omitted. Table 5
  • Table 5 shows that the maximum -thickness of the low-refractive-index layer 111 (Si0 2 film) that allows the maximum of the reflectance difference to be 0.8 or less is 85 nm when the thickness of the transparent conductive layer 12 (ITO film) is 10 nm, while it is 65 nm when the thickness of the transparent conductive layer 12 (ITO film) is 12 nm. It is also shown that in the case where the thickness of the transparent conductive layer 12 (ITO film) is 8 nm, even when the maximum thickness is 100 nm, the maximum of the reflectance difference is 0.8 or less.
  • the maximum thickness of the low-refractive-index layer 111 that allows the maximum of the reflectance difference to be 0.8 or less is 45 nm.
  • Fig. 13 shows the relation between the maximum thickness of a low-refractive-index layer 111 (Si0 2 film) that allows the maximum of the reflectance difference to be 0.8 or less and the thickness of the transparent conductive layer 12 (ITO film), plotting the maximum thickness on the ordinate ' and the thickness of the transparent conductive layer 12 (ITO film) on the abscissa.
  • Fig. 13 also shows approximate lines obtained from the relation between the maximum thickness and the thickness of the transparent conductive layer 12 (ITO film) .
  • the maximum of the reflectance difference will be 0.8 or less (however, when the thickness of the transparent conductive layer 12 (ITO film) is 12 nm to 14 nm, the cases where the thickness of the low-refractive-index layer 111 (Si0 2 film) is less than 10 nm are excluded) .
  • Fig. 13 also shows the relation between the maximum thickness of a low-refractive-index layer 111 (Si0 2 film) that allows the maximum of the reflectance difference to be 0.7 or less and the thickness of the transparent conductive layer 12 (ITO film), as well as approximate lines obtained from the relation.
  • the maximum of the difference in reflectance at each wavelength between the part where the transparent conductive layer 12 is formed (pattern-forming region) and the part where the transparent conductive layer 12 is not formed (pattern-non-forming region) ' can be 0.8 or less. Therefore, in a transparent touch switch 101 configured as shown in Fig. 1, in relation with the thickness of a transparent conductive layer 12, by forming a low-refractive-index layer 111 to have a thickness not greater than the value calculated by the equation 2,. the transparent touch switch 101 can be provided with excellent visibility, where the pattern shape of the transparent conductive layer 12 is inconspicuous.
  • Embodiments of the transparent planar body 1 and the transparent touch switch 101 using the same according the invention have been described above; however, the specific configurations are not limited to the above embodiments.
  • the patterned transparent conductive layer 22 is formed on one side of the transparent substrate 21 to form the second transparent planar body 2 in the above embodiments, it is also possible to use a silicon-containing layer 11 in place of the transparent substrate 21, and provide the second transparent planar body 2 with the same configuration as the first transparent planar body 1.
  • the silicon-containing layer 11 includes the low-refractive-index layer 111 and the high-refractive-index layer 112 in the above embodiments, the silicon-containing layer 11 may be formed only of a high-refractive-index layer 112. With reference to the simulation results shown in Figs.
  • the difference between the maximum and minimum of the difference in reflectance at each wavelength between the part in which the -transparent conductive layer 12 is formed (pattern-forming region) and the part in which the transparent conductive layer 12 is not formed (pattern-non-forming region) can be 0.65 or less. Accordingly, a transparent planar body 1 and a transparent touch switch 101 with excellent visibility, where the pattern of the transparent conductive layer 12 is inconspicuous, can be obtained.

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  • Non-Insulated Conductors (AREA)

Abstract

L'invention a trait à un corps plan transparent et à un interrupteur tactile transparent qui peuvent apporter une meilleure visibilité. Le corps plan transparent (1) comprend une couche contenant du silicium (11), une couche adhésive (13) disposée au moins sur une face de la couche contenant du silicium (11), et une couche conductrice transparente à motifs (12) placée entre la couche contenant du silicium (11) et la couche adhésive (13). En ce qui concerne la valeur absolue de la différence entre le facteur de réflexion d'une zone de formation de motifs contenant la couche conductrice transparente (12), à chaque longueur d'onde de la lumière appliquée à cette zone à travers la couche contenant du silicium (11), et le facteur de réflexion d'une zone sans formation de motifs ne comportant pas la couche conductrice transparente (12), à chaque longueur d'onde de la lumière appliquée à cette zone à travers la couche contenant du silicium (11), la différence entre le maximum et le minimum de la valeur absolue est de 0,65 ou moins dans la plage de 450 nm à 700 nm.
PCT/JP2011/052669 2010-02-03 2011-01-31 Corps plan transparent et interrupteur tactile transparent WO2011096580A1 (fr)

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WO2015191232A1 (fr) * 2014-06-11 2015-12-17 Carestream Health, Inc. Procédé de production d'un motif invisible à révéler dans un film conducteur transparent
EP3183395A4 (fr) * 2015-03-16 2018-11-21 DIRTT Environmental Solutions, Ltd. Panneaux de paroi reconfigurables de panneau de verre
US11085184B2 (en) 2014-02-20 2021-08-10 Dirtt Environmental Solutions Ltd. Interface for mounting interchangable components
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US11240922B2 (en) 2016-06-10 2022-02-01 Dirtt Environmental Solutions Ltd. Wall system with electronic device mounting assembly
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JP5683734B1 (ja) * 2014-07-01 2015-03-11 グンゼ株式会社 透明導電性積層体、タッチパネル、および透明導電性積層体の製造方法

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US9018536B2 (en) 2011-03-22 2015-04-28 Polyic Gmbh & Co. Kg Layered body, production method and use thereof
JP2013069033A (ja) * 2011-09-21 2013-04-18 Toppan Printing Co Ltd 透明導電性積層体及びその製造方法
CN103135869A (zh) * 2011-11-25 2013-06-05 日东电工株式会社 触摸面板传感器
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WO2013100031A1 (fr) * 2011-12-27 2013-07-04 積水化学工業株式会社 Film conducteur transmettant la lumière et panneau tactile de type capacitif le comprenant
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US11085184B2 (en) 2014-02-20 2021-08-10 Dirtt Environmental Solutions Ltd. Interface for mounting interchangable components
WO2015191232A1 (fr) * 2014-06-11 2015-12-17 Carestream Health, Inc. Procédé de production d'un motif invisible à révéler dans un film conducteur transparent
EP3183395A4 (fr) * 2015-03-16 2018-11-21 DIRTT Environmental Solutions, Ltd. Panneaux de paroi reconfigurables de panneau de verre
US10400448B2 (en) 2015-03-16 2019-09-03 Dirtt Environmental Solutions, Ltd. Reconfigurable wall panels
US11093087B2 (en) 2016-06-10 2021-08-17 Dirtt Environmental Solutions Ltd. Glass substrates with touchscreen technology
US11240922B2 (en) 2016-06-10 2022-02-01 Dirtt Environmental Solutions Ltd. Wall system with electronic device mounting assembly
US11550178B2 (en) 2016-07-08 2023-01-10 Dirtt Environmental Solutions Inc. Low-voltage smart glass

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