WO2011087310A2 - Dispositif électroluminescent à semi-conducteurs en nitrure du groupe iii - Google Patents

Dispositif électroluminescent à semi-conducteurs en nitrure du groupe iii Download PDF

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Publication number
WO2011087310A2
WO2011087310A2 PCT/KR2011/000281 KR2011000281W WO2011087310A2 WO 2011087310 A2 WO2011087310 A2 WO 2011087310A2 KR 2011000281 W KR2011000281 W KR 2011000281W WO 2011087310 A2 WO2011087310 A2 WO 2011087310A2
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Prior art keywords
nitride semiconductor
group iii
iii nitride
electrode
semiconductor layer
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PCT/KR2011/000281
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English (en)
Korean (ko)
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WO2011087310A3 (fr
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김창태
이태희
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주식회사 에피밸리
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Publication of WO2011087310A2 publication Critical patent/WO2011087310A2/fr
Publication of WO2011087310A3 publication Critical patent/WO2011087310A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Definitions

  • the present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a group III nitride semiconductor light emitting device for improving the separation of a pad to be wire bonded.
  • the group III nitride semiconductor light emitting element is a group III nitride of Al (x) Ga (y) In (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • Means a light emitting device such as a light emitting diode including a semiconductor layer, and additionally excludes the inclusion of a material consisting of elements of other groups such as SiC, SiN, SiCN, CN or a semiconductor layer made of these materials. no.
  • FIG. 1 is a view illustrating an example of a conventional Group III nitride semiconductor light emitting device, wherein the Group III nitride semiconductor light emitting device is grown on the substrate 100, the buffer layer 200 grown on the substrate 100, and the buffer layer 200.
  • the p-side electrode 600 formed on the group nitride semiconductor layer 500, the p-side bonding pad 700 formed on the p-side electrode 600, the p-type group III nitride semiconductor layer 500 and the active layer 400 are formed.
  • the n-side electrode 800 and the passivation layer 900 are formed on the n-type group III nitride semiconductor layer 300 exposed by mesa etching.
  • a GaN-based substrate is used as the homogeneous substrate, and a sapphire substrate, a SiC substrate, or a Si substrate is used as the heterogeneous substrate. Any substrate may be used as long as the group III nitride semiconductor layer can be grown.
  • the n-side electrode 800 may be formed on the SiC substrate side.
  • Group III nitride semiconductor layers grown on the substrate 100 are mainly grown by MOCVD (organic metal vapor growth method).
  • the buffer layer 200 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the dissimilar substrate 100 and the group III nitride semiconductor, and US Pat.
  • a technique for growing an AlN buffer layer having a thickness of US Pat. No. 5,290,393 describes Al (x) Ga (1-x) N having a thickness of 10 kPa to 5000 kPa at a temperature of 200 to 900 C on a sapphire substrate. (0 ⁇ x ⁇ 1)
  • a technique for growing a buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C.
  • the undoped GaN layer is grown prior to the growth of the n-type Group III nitride semiconductor layer 300, which may be viewed as part of the buffer layer 200 or as part of the n-type Group III nitride semiconductor layer 300. .
  • n-type contact layer In the n-type group III nitride semiconductor layer 300, at least a region (n-type contact layer) in which the n-side electrode 800 is formed is doped with impurities, and the n-type contact layer is preferably made of GaN and doped with Si. .
  • U. S. Patent No. 5,733, 796 describes a technique for doping an n-type contact layer to a desired doping concentration by controlling the mixing ratio of Si and other source materials.
  • the active layer 400 is a layer that generates photons (light) through recombination of electrons and holes, and is mainly composed of In (x) Ga (1-x) N (0 ⁇ x ⁇ 1), and one quantum well layer (single quantum wells) or multiple quantum wells.
  • the p-type III-nitride semiconductor layer 500 is doped with an appropriate impurity such as Mg, and has an p-type conductivity through an activation process.
  • U.S. Patent No. 5,247,533 describes a technique for activating a p-type group III nitride semiconductor layer by electron beam irradiation, and U.S. Patent No. 5,306,662 annealing at a temperature of 400 DEG C or higher to A technique for activating is described, and US Patent Publication No.
  • 2006/157714 discloses a p-type III-nitride semiconductor layer without an activation process by using ammonia and a hydrazine-based source material together as a nitrogen precursor for growing the p-type III-nitride semiconductor layer. Techniques for having this p-type conductivity have been described.
  • the p-side electrode 600 is provided to supply a good current to the entire p-type group III nitride semiconductor layer 500.
  • US Patent No. 5,563,422 is formed over almost the entire surface of the p-type group III nitride semiconductor layer.
  • a light-transmitting electrode made of Ni and Au in ohmic contact with the p-type III-nitride semiconductor layer 500 is described.
  • US Pat. No. 6,515,306 discloses n on the p-type III-nitride semiconductor layer. A technique is described in which a type superlattice layer is formed and then a translucent electrode made of indium tin oxide (ITO) is formed thereon.
  • ITO indium tin oxide
  • the p-side electrode 600 may be formed to have a thick thickness so as not to transmit light, that is, to reflect the light toward the substrate side, this technique is referred to as flip chip (flip chip) technology.
  • U. S. Patent No. 6,194, 743 describes a technique relating to an electrode structure including an Ag layer having a thickness of 20 nm or more, a diffusion barrier layer covering the Ag layer, and a bonding layer made of Au and Al covering the diffusion barrier layer.
  • the p-side bonding pad 700 and the n-side electrode 800 are for supplying current and wire bonding to the outside, and US Patent No. 5,563,422 describes a technique in which the n-side electrode is composed of Ti and Al.
  • the passivation layer 900 is formed of a material such as silicon dioxide and may be omitted.
  • the n-type III-nitride semiconductor layer 300 or the p-type III-nitride semiconductor layer 500 may be composed of a single layer or a plurality of layers, and recently, the substrate 100 may be formed by laser or wet etching. A technique for manufacturing a vertical light emitting device by separating from group III nitride semiconductor layers has been introduced.
  • such a light emitting device may cause a problem that the p-side bonding pad 700 is peeled off from the light emitting device when wire bonding to the p-side bonding pad 700.
  • FIG. 1 is a view showing an example of a conventional group III nitride semiconductor light emitting device
  • FIGS. 2 and 3 are views showing an example of a group III nitride semiconductor light emitting device according to the present disclosure
  • FIG. 4 is a view showing another example of a group III nitride semiconductor light emitting device according to the present disclosure.
  • FIG. 5 and 6 are views showing another example of the group III nitride semiconductor light emitting device according to the present disclosure.
  • FIG. 7 is a view showing another example of a group III nitride semiconductor light emitting device according to the present disclosure.
  • the group III nitride semiconductor light emitting device includes a substrate 10, a buffer layer 11 formed on the substrate 10, and A first group III nitride semiconductor layer 12 formed on the buffer layer 11, an active layer 13 formed on the first group III nitride semiconductor layer 12 to generate light by recombination of electrons and holes, and an active layer
  • the first group III nitride semiconductor layer in which the bonding pad 15 and the first electrode 17 formed on the group nitride semiconductor layer 14, and the second group III nitride semiconductor layer 14 and the active layer 13 are etched and exposed.
  • the second electrode 20 is formed on the (12).
  • the first group III nitride semiconductor layer 12 and the second group III nitride semiconductor layer 14 are provided to have different conductivity.
  • the first group III nitride semiconductor layer 12 is formed of an n-type semiconductor layer
  • the Group 2 III nitride semiconductor layer 14 was formed of a p-type semiconductor layer.
  • the first opening 21 is formed on the second group III nitride semiconductor layer 14 using an E-beam evaporator.
  • the translucent electrode 16 is laminated as much as possible.
  • the first opening 21 has a diameter of 5 to 10 micrometers and is formed at a position where the first electrode 17 is to be formed instead of the front surface of the translucent electrode 16.
  • the first opening 21 is for increasing the area where the second group III nitride semiconductor layer 14 and the first electrode 17 contact each other, and the shape of the first opening 21 and the plurality of first openings 21 are increased.
  • the arrangement form of is not particularly limited.
  • first opening 21 and the first electrode 17 extend from the bonding pad 15 toward the second electrode 20
  • shape of the first electrode 17 is The present invention is not limited thereto and may be formed to extend to a plurality of branch electrodes in order to facilitate current diffusion.
  • the bonding pad 15 is formed to contact the second group III nitride semiconductor layer 14.
  • the bonding pad 15 may be pulled by the wire when wire bonding or after the wire bonding is performed, and thus peeling may occur.
  • the bonding pad 15 may include a first electrode formed to fill the first opening 21. 17) the area in contact with the second group III nitride semiconductor layer 14 is widened, so that the adhesive force can be improved to improve this phenomenon.
  • FIG. 4 is a view illustrating another example of the group III nitride semiconductor light emitting device according to the present disclosure. Unlike FIG. 3, a bonding pad 15 is formed on the light transmissive electrode 16, and the bonding pad 15 is formed of the first electrode 17. ) Is electrically connected to the second group III nitride semiconductor layer 14.
  • FIG. 5 and 6 illustrate another example of a group III nitride semiconductor light emitting device according to the present disclosure, in which a second opening 18 is formed in a region where a bonding pad 15 is to be formed, thereby forming a second group III nitride semiconductor.
  • the light transmissive electrode 16 is formed such that the layer 14 is exposed.
  • the diameter of the circle is set to about 110 to 120 micrometers in consideration of the size of the bonding pad 15, and the second opening 18 formed in the region is formed in the region where the first electrode 17 is to be formed.
  • the first opening 21 is formed to have a diameter of 5 to 10 micrometers as shown in FIG. 3, the shape and size of the first opening 21 and the second opening 18 are not limited thereto.
  • the bonding pad 15 is smaller than the second opening 18 (eg, 100 micrometers).
  • the bonding pad 15 and the translucent electrode 16 are electrically connected by a third electrode 19 formed in a bridge shape as shown in FIG. 5.
  • the third electrode 19 may be formed in plural, and it is preferable that the third electrode 19 be radially formed to smoothly supply current.
  • the bonding pad 15, the first electrode 17, and the third electrode 19 are simultaneously formed, but may be formed through separate processes.
  • the contact edge of the bonding pad 15 is weak when the wire is bonded or after bonding, so that the outer edge of the bonding pad 15 is peeled off and peeled. It is a trigger of the peeling, which may cause the bonding pad 15 and the translucent electrode 16 to be separated from each other to cause peeling, but the bonding pad 15 and the translucent electrode 16 are isolated as described above. Since the bonding pad 15 is formed and electrically connected by the third electrode 19 to increase the area in which the bonding pad 15 is in contact with the second group III nitride semiconductor layer 14, the adhesive force may be improved.
  • FIG. 7 is a view illustrating another example of the group III nitride semiconductor light emitting device according to the present disclosure.
  • the first opening 21 is formed in a rectangular shape on the second group III nitride semiconductor layer 14, and the first electrode ( 17 is formed to fill a part of the first opening 21 in a form extending from the bonding pad 15 toward the second electrode 20.
  • the first opening 21 forms a barrier against the flow of current (arrow direction), thereby preventing the current from being concentrated in the center of the device, thereby facilitating overall current diffusion.
  • a group III nitride semiconductor light emitting device A group III nitride semiconductor light emitting device.
  • a group III nitride semiconductor light emitting element wherein the first electrode extends from the bonding pad toward the second electrode.
  • a group III nitride semiconductor light emitting element wherein the first electrode is formed so as to fill all of the plurality of openings.
  • the present disclosure it is possible to improve the yield by improving the bonding pad is separated from the light emitting device during wire bonding.

Abstract

La présente invention concerne un dispositif électroluminescent à semi-conducteurs en nitrure du groupe III, qui comporte une pluralité de couches semi-conductrices en nitrure du groupe III comprenant une première couche semi-conductrice en nitrure du groupe III présentant une première conductivité, une seconde couche semi-conductrice en nitrure du groupe III présentant une seconde conductivité différente de la première conductivité, et une couche d'activation intercalée entre les première et seconde couches semi-conductrices en nitrure du groupe III, de façon à produire de la lumière par recombinaison d'électrons et de trous ; un plot de soudage connecté électriquement à la pluralité de couches semi-conductrices en nitrure de groupe III ; une électrode de transmission de lumière qui est formée sur la seconde couche semi-conductrice en nitrure de groupe III, et qui comporte une pluralité d'ouvertures servant à exposer la seconde couche semi-conductrice en nitrure du groupe III ; une première électrode formée de façon à remplir au moins une partie de la pluralité d'ouvertures ; et une seconde électrode formée sur la première couche semi-conductrice en nitrure du groupe III, ledit plot de soudage et la première électrode étant connectés électriquement l'un à l'autre.
PCT/KR2011/000281 2010-01-14 2011-01-14 Dispositif électroluminescent à semi-conducteurs en nitrure du groupe iii WO2011087310A2 (fr)

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Application Number Priority Date Filing Date Title
KR10-2010-0003453 2010-01-14
KR1020100003453A KR20110083292A (ko) 2010-01-14 2010-01-14 3족 질화물 반도체 발광소자

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WO2011087310A2 true WO2011087310A2 (fr) 2011-07-21
WO2011087310A3 WO2011087310A3 (fr) 2011-10-20

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Cited By (1)

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CN103178183A (zh) * 2011-12-26 2013-06-26 Lg伊诺特有限公司 发光器件

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
KR101223226B1 (ko) * 2011-01-20 2013-01-31 갤럭시아포토닉스 주식회사 개구부를 갖는 발광 다이오드 및 발광 다이오드 패키지
KR101969307B1 (ko) * 2012-09-07 2019-04-17 삼성전자주식회사 반도체 발광소자
KR102070088B1 (ko) 2013-06-17 2020-01-29 삼성전자주식회사 반도체 발광소자
CN106463578B (zh) 2014-05-08 2019-11-22 Lg伊诺特有限公司 发光器件

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103178183A (zh) * 2011-12-26 2013-06-26 Lg伊诺特有限公司 发光器件
US10128412B2 (en) 2011-12-26 2018-11-13 Lg Innotek Co., Ltd. Light emitting device

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WO2011087310A3 (fr) 2011-10-20
KR20110083292A (ko) 2011-07-20

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