WO2011081322A3 - 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 - Google Patents

레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 Download PDF

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Publication number
WO2011081322A3
WO2011081322A3 PCT/KR2010/008852 KR2010008852W WO2011081322A3 WO 2011081322 A3 WO2011081322 A3 WO 2011081322A3 KR 2010008852 W KR2010008852 W KR 2010008852W WO 2011081322 A3 WO2011081322 A3 WO 2011081322A3
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Prior art keywords
resist
bottom layer
composition
integrated circuit
semiconductor integrated
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PCT/KR2010/008852
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English (en)
French (fr)
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WO2011081322A2 (ko
Inventor
김미영
이우진
한권우
이한송
김상균
김종섭
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제일모직 주식회사
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Application filed by 제일모직 주식회사 filed Critical 제일모직 주식회사
Priority to CN201080060219.0A priority Critical patent/CN102687075B/zh
Publication of WO2011081322A2 publication Critical patent/WO2011081322A2/ko
Publication of WO2011081322A3 publication Critical patent/WO2011081322A3/ko
Priority to US13/539,971 priority patent/US8962747B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Polymers (AREA)

Abstract

화학식 1 내지 3로 표시되는 화합물의 유기실란계 축중합물; 및 용매를 포함하는 레지스트 하층막용 조성물이 제공된다. 상기 레지스트 하층막용 조성물은 굴절율과 흡광도를 용이하게 조절하여, 반사방지 특성이 우수한 레지스트 하층막과 이를 이용한 반도체 집적회로 디바이스를 제공할 수 있다.
PCT/KR2010/008852 2009-12-31 2010-12-10 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 WO2011081322A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080060219.0A CN102687075B (zh) 2009-12-31 2010-12-10 用于抗蚀剂的下层的组合物和使用其来生产半导体集成电路装置的方法
US13/539,971 US8962747B2 (en) 2009-12-31 2012-07-02 Resist underlayer composition and process of producing integrated circuit devices using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090136189A KR20110079202A (ko) 2009-12-31 2009-12-31 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR10-2009-0136189 2009-12-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/539,971 Continuation US8962747B2 (en) 2009-12-31 2012-07-02 Resist underlayer composition and process of producing integrated circuit devices using the same

Publications (2)

Publication Number Publication Date
WO2011081322A2 WO2011081322A2 (ko) 2011-07-07
WO2011081322A3 true WO2011081322A3 (ko) 2011-11-03

Family

ID=44226953

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/008852 WO2011081322A2 (ko) 2009-12-31 2010-12-10 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법

Country Status (5)

Country Link
US (1) US8962747B2 (ko)
KR (1) KR20110079202A (ko)
CN (1) CN102687075B (ko)
TW (1) TWI465853B (ko)
WO (1) WO2011081322A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101432607B1 (ko) 2011-08-11 2014-08-21 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
WO2013146600A1 (ja) * 2012-03-27 2013-10-03 日産化学工業株式会社 自己組織化膜の下層膜形成組成物
TWI557142B (zh) * 2013-12-31 2016-11-11 陶氏全球科技責任有限公司 可交聯聚合物及下方層組成物
US10429737B2 (en) * 2017-09-21 2019-10-01 Rohm And Haas Electronic Materials Korea Ltd. Antireflective compositions with thermal acid generators

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070101148A (ko) * 2006-04-11 2007-10-16 신에쓰 가가꾸 고교 가부시끼가이샤 규소 함유막 형성용 조성물, 규소 함유막, 규소 함유막형성 기판 및 이를 이용한 패턴 형성 방법
KR20070122250A (ko) * 2006-06-26 2007-12-31 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스
KR20080089303A (ko) * 2007-03-30 2008-10-06 제일모직주식회사 내에칭성 디실란 및 포화 탄화수소 가교결합된 실리콘 함유폴리머, 그 제조 방법 및 그 사용 방법

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JP3334662B2 (ja) 1999-03-02 2002-10-15 日本電気株式会社 化学増幅系ネガ型レジスト材料
KR100373215B1 (ko) 2001-02-01 2003-02-25 주식회사 엘지화학 반도체 소자용 저 유전 절연재료의 제조방법
US20040109950A1 (en) * 2002-09-13 2004-06-10 Shipley Company, L.L.C. Dielectric materials
KR20060115411A (ko) * 2005-05-04 2006-11-09 주식회사 하이닉스반도체 반도체 소자의 비트라인콘택 형성 방법
KR100792045B1 (ko) 2006-08-10 2008-01-04 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
JP2009199061A (ja) * 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物

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Publication number Priority date Publication date Assignee Title
KR20070101148A (ko) * 2006-04-11 2007-10-16 신에쓰 가가꾸 고교 가부시끼가이샤 규소 함유막 형성용 조성물, 규소 함유막, 규소 함유막형성 기판 및 이를 이용한 패턴 형성 방법
KR20070122250A (ko) * 2006-06-26 2007-12-31 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스
KR20080089303A (ko) * 2007-03-30 2008-10-06 제일모직주식회사 내에칭성 디실란 및 포화 탄화수소 가교결합된 실리콘 함유폴리머, 그 제조 방법 및 그 사용 방법

Also Published As

Publication number Publication date
CN102687075A (zh) 2012-09-19
US8962747B2 (en) 2015-02-24
TWI465853B (zh) 2014-12-21
KR20110079202A (ko) 2011-07-07
WO2011081322A2 (ko) 2011-07-07
TW201133148A (en) 2011-10-01
US20120270981A1 (en) 2012-10-25
CN102687075B (zh) 2015-02-04

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