WO2011076157A1 - Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze - Google Patents
Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze Download PDFInfo
- Publication number
- WO2011076157A1 WO2011076157A1 PCT/DE2009/001798 DE2009001798W WO2011076157A1 WO 2011076157 A1 WO2011076157 A1 WO 2011076157A1 DE 2009001798 W DE2009001798 W DE 2009001798W WO 2011076157 A1 WO2011076157 A1 WO 2011076157A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- melt
- magnetic
- magnetic field
- field generating
- central axis
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/24—Crucible furnaces
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2213/00—Aspects relating both to resistive heating and to induction heating, covered by H05B3/00 and H05B6/00
- H05B2213/02—Stirring of melted material in melting furnaces
Definitions
- the present invention relates to a method and an arrangement for influencing the melt convection, which in a melt volume in the
- Solidification direction is as uniform as possible.
- no strong temperature gradients perpendicular to the solidification direction and no local temperature inhomogeneities occur in the vicinity of the phase boundary, which can lead to thermal stresses and to the formation of crystal defects and can occur, for B. in the form of dislocations can have a detrimental effect on the applications of the crystal materials.
- the flow in the melt influences the shape of the solidification front as well as the incorporation and distribution of foreign atoms or particles in the solid state.
- the structural, mechanical, electrical and optical properties of the solid
- phase boundary Due to uneven flow conditions in the vicinity of the phase boundary, it may be local, eg. In
- these particles can sink by sedimentation to the bottom of the melt or on the
- the floating can be used to chemically remove these particles via the gas atmosphere or mechanically from the melt, and thus effectively purify the melt.
- the prerequisite for floating is a high flow intensity, so that even large and heavy particles can be found. This is used in metallurgy for the purification of metallic melts, for example of steel or metallurgical silicon.
- Czochralski process for the production of silicon crystals
- arrangements with alternating, traveling or rotating magnetic fields are used in order to influence the flow of the melt in a rotationally symmetrical crucible in the desired manner.
- the coils for generating the magnetic fields are arranged so that one with respect to the axis of rotation of the Tiegel symmetrical magnetic field is generated.
- the axis of rotation represents the central axis of the melt volume or crucible which runs parallel to the solidification direction or perpendicular to the phase boundary between the melt and the solid.
- mechanical rotation of the growing crystal and crucible is often additionally performed in the opposite or the same direction. This leads above all to a radial homogenization of the impurity concentration and the temperature distribution at the phase boundary.
- inductors are used, outside or inside the furnace to heat the melt
- the furnace is usually surrounded by a closed vessel to set the required gas atmosphere above the melt.
- electrically conductive system components in particular the electrically conductive heater or the boiler wall in the case of an arrangement of the inductors outside the furnace, which cause a weakening of the magnetic flux density.
- EP 1 849 892 A1 for example, to use alternating current-operated heating modules, so-called magnetic heaters, in which the alternating magnetic field generated by these heaters is used specifically to influence the flow.
- the magnetic heaters are arranged so that they generate a magnetic field and thus a Lorentz force distribution in the melt, which is symmetrical to the central axis the melt volume is.
- a plurality of magnetic heaters are arranged around the melt volume, which are subjected to an alternating current with or without phase shift in order to produce a stirring effect in the melt by a time-varying magnetic field.
- the alternating current through the magnetic heaters can be superimposed with a direct current, in order to be able to control the melting temperature during the processing independently of the melt convection.
- Such an arrangement is also known from DE 103 49 339 AI.
- a symmetrical arrangement of the magnetic heaters with respect to the central axis of the melt volume results in a correspondingly symmetrical Lorentz force distribution in the melt, which has a flow structure
- DE 102 59 588 A1 describes a method for producing a monocrystal made of silicon, in which by a non-rotationally symmetrical melt flow, a reduced deflection of the phase boundary, a homogenization of the radial course of the axial temperature gradients and a reduction of the radial concentration gradients for oxygen can be achieved.
- the rotational symmetry of a magnetic field acting on the melt is broken by additional metallic shields.
- the crystal with respect. The axis of rotation of the crystal growing plant
- the object of the present invention is to provide a method and an arrangement for influencing the melt zkonvetation in the production of a solid by solidification of an electrically conductive melt, with which a high flow intensity or flow rate and a flow structure in the vicinity of the phase boundary between the Solid and the melt can be generated, which positively influences the foreign matter and Fremdphaseneinbau in the solid. Furthermore, the method and the arrangement to allow a homogeneous temperature field as possible perpendicular to the Festarrungs sec. To ensure growth direction, the
- the task is with the method and the
- Solid body by solidification of an electrically conductive melt occurs by means of
- Magnetic field generating devices applied external time-varying magnetic fields to the melt volume, which produce a distribution of Lorentz forces in the melt volume.
- the proposed method is characterized in that the magnetic field
- generating means are controlled so that the distribution of Lorentz forces about a central axis of the melt volume, at least approximately perpendicular to a phase boundary between the solid and the melt, i. parallel to the solidification direction of the solid, runs, or the resulting flow pattern is asymmetric.
- Phase boundary i. in a distance range of about 0.1 mm to about 1 cm to the phase boundary, in the melt no local flow minimum on the central axis.
- the central axis runs through the geometric center of gravity of the phase boundary or the cross section of the melt container parallel to
- Lorentz forces refers to the amount and / or direction of these forces. Furthermore, reduced by an asymmetric distribution of Lorentz forces the number the flow rollers in the melt, whereby a higher average flow velocity, especially in the immediate vicinity of the phase boundary occurs. As a result, a better mixing at the phase boundary and a more uniform distribution of impurities are also achieved. This leads to a minimization of the accumulation of foreign substances in the region of the phase boundary and thus to a controlled incorporation of foreign matter and to the suppression of the formation of precipitates.
- the magnetic field generating devices are controlled so that the asymmetric distribution of Lorentz forces around the central axis changes over time, preferably rotates about the central axis. This can be done continuously or in stages.
- a rotation of the generated Lorentz force distribution is preferably carried out in stages by switching the power supply between the magnetic field generating devices.
- the time between individual switching operations is suitably selected depending on the growth rate of the solid. Here can, for example, times between the
- the between 10 s and 10 min or even up to 30 min, can be up to 1 h or longer.
- Magnetic field generating devices by possibly in conjunction with a correspondingly asymmetric
- Impurity and foreign phase incorporation in the solids as well as the structural properties of the material are positively influenced.
- Magnetic field generating devices has the advantage that the generation of the magnetic field can take place simultaneously with the heating effect to maintain a required temperature of the melt.
- Magnetic heaters are preferably with a
- the heating power can be controlled independently of the generation of the magnetic fields.
- the melt is usually in a crucible, which may have any shape,
- the means for generating the magnetic fields can thereby laterally, i. be arranged around the crucible or the central axis, or also above and / or below the crucible. In the case of magnetic heaters this is also spoken of side, ceiling or floor heaters.
- the means for generating the magnetic fields are preferably divided into individual independently electronically controllable segments. With these devices, a magnetic traveling field with a perpendicular to the direction of growth asymmetrical Lorent zkraftver gutter can be selectively generated in the melt. Compared to the stirring effect, which is caused by a symmetrical distribution of Lorentz forces around the central axis, in the case of asymmetrical Lorent distribution of forces the same force distribution is achieved
- the proposed arrangement for influencing or controlling the melt convection comprises several
- Magnetic field generating devices which are arranged around a volume for receiving a container for a melt or to such a container and connected to an electrical control device for controlling the individual devices.
- the magnetic field generating devices can be arranged symmetrically or asymmetrically about the central axis.
- the control device has a control program, with the magnetic field generating means so
- the melt ⁇ volume be controlled so that an asymmetric distribution of Lorentz forces around a central axis of the melt ⁇ volume is obtained.
- the melt ⁇ volume is controlled so that an asymmetric distribution of Lorentz forces around a central axis of the melt ⁇ volume is obtained.
- Control device or its control program designed such that the control of the magnetic field generating devices is carried out according to the inventive method.
- Devices in this case designed as magnetic heaters or inductors, wherein preferably in the growth direction in each case at least three independently
- controllable magnetic heaters are arranged, the
- the asymmetrical distribution of the Lorentz forces or the asymmetric flow pattern can also be produced with an arrangement of only one or two magnetic heaters.
- the method and the proposed arrangement also cause higher flow velocities near the phase boundary, such that foreign phases and particles can easily float in the melt and thus be more effectively removed for the purification of metallic and semiconductor melts.
- the proposed method and the proposed arrangement can be used in different fields.
- An example is the directed one
- Solidification of semiconductor melt crystals in crucibles especially the production of multicrystalline and monocrystalline silicon for photovoltaics.
- Another example is the directional solidification of compound semiconductors, halide, fluoride, or oxide containing crystals.
- crystal materials of metallic solutions for. B. nitride semiconductors from gallium-containing solvents.
- the crucibles or melting containers may be arbitrary in all applications, but especially
- Fig. 1 is a schematic representation of
- Fig. 2 shows an example of an arrangement of
- melt flow specifically influenced or controlled.
- the decisive factors for the quality of the solid produced are the flow and temperature conditions in the immediate vicinity of the phase boundary, since the segregation processes take place here and these depend on the local impurity concentration and the local temperature.
- the melt flow is partly due to the temperature conditions in the
- the flow structure can be parallel in a two-dimensional section in a plane parallel to the phase boundary (x-y plane)
- phase boundary is often curved or curved, sometimes with several local curvatures, so that in strict sense no plane but a correspondingly curved surface must be considered.
- this plane or area the following geometric elements can be defined to describe the symmetry.
- Center of gravity 1 or the central axis 8 can serve as the reference point for the melting volume or as a reference axis for describing the symmetry properties of the flow pattern of the melt.
- the center 1 containing crossing lines or the central axis containing planes can serve for the axis or plane mirroring.
- Magnetic heater leads to a likewise symmetrical structure of the melt flow due to the natural buoyancy in the form of convection rolls.
- Symmetry axes or planes run through the center of the phase boundary, ie through the central axis. As in this area flow rollers 4 with opposite flow direction to each other
- FIG. 1 shows a view of FIG
- Lorentz forces are chosen asymmetrically relative to the central axis. It is already decisive that the Lorent force distribution is not symmetrical around the central axis. Mirror levels may continue to exist, if in the center or in
- the change over time of the Lorentz force distribution can take place with a comparatively large time constant, which is on the order of seconds, minutes or hours.
- Magnetic heaters or inductors used to generate the magnetic fields.
- a basic idea in the realization of the proposed arrangement is not as before to use an inductor surrounding the melt, but individual independently electronically controllable segments. The single ones
- Segments represent independent inductors and are arranged asymmetrically with respect to the central axis of the melt volume or driven asymmetrically in order to produce the desired Lorentz force distribution in the melt.
- a time-variable control of the segments takes place, for example by switching between different segments in the circumferential direction of the melt volume or the
- Frequency of switching the segments is chosen so that after each switching operation the
- FIG. 2 shows a first example of a
- the magnetic heater 6 which are arranged laterally around a melt volume 7 here.
- any cross-sectional areas of the magnetic heaters and the melt volume can be used.
- the magnetic heaters may, for example, a square, rectangular or round cross-sectional area have, in particular as a plate-shaped
- the amount of DC and AC components determines the heat output while the AC parameters (amplitude, frequency, phase shift) determine the Lorentz forces in the melt.
- At least the amplitude or the phase shift or the frequency of the alternating current are independently adjustable in the magnetic heaters 6 each side. By different control of at least one side compared to the other sides is an asymmetric
- Switching this control can then be achieved rotation of the thus generated Lorent zkraftver whatsoever about the central axis 8.
- Switching is understood here as meaning a change in the sides during activation, for example a cyclic change in relation to the central axis, on which the magnetic heaters are driven with a lower alternating current amplitude.
- FIG. 3 shows in the partial illustrations a to f further examples of the arrangement of the magnetic heaters in the proposed arrangement or the proposed method.
- an arrangement can be seen in Figure 3a, which differs from the arrangement of Figure 2 only by a higher number of magnetic heaters 6 on each side.
- the asymmetrical Lorent zkraftverander as in the
- Example of Figure 2 achieved by suitable non-identical control of the individual pages of this arrangement.
- FIG. 3b shows an arrangement in which the upper magnetic heaters 6 each extend over two adjoining sides, while each side has a separate lower magnetic heater 6. Even with such an arrangement can by suitable
- FIG. 3c shows an arrangement and embodiment of the magnetic heater in which two segments and a part of a segment or magnetic heater 6 are meander-shaped.
- Asymmetrical arrangement or design of the magnetic heater 6 with respect to the central axis, an asymmetric magnetic field or an asymmetrical Lorentz force distribution with respect to the central axis in the melt volume 7 is achieved here even without special asymmetrical activation.
- FIG. 3d shows an embodiment in which
- three orbiting magnetic heaters 6 are provided on top of each other but have a larger gap between the power terminals. This also becomes an asymmetric magnetic field or an asymmetrical one
- the asymmetry can be increased even further by an additional asymmetrical activation.
- asymmetric magnetic fields or Lorentz force distributions are also generated by arranging the magnetic heater 6 as a floor or ceiling heater, as illustrated by Figure 3e.
- the heater assembly of this example has six parallel segments or magnetic heaters 6 above and below each Melt volume on. This allows the generation of a traveling magnetic field approximately perpendicular to the growth direction. By a phase shift
- FIG. 3f shows an arrangement in which one or more magnetic heaters 6 run parallel to the growth direction of the solid or to the central axis.
- the asymmetry is achieved in this example, as in the example of Figure 2a by a different control of the individual pages.
- FIG. 3g shows an arrangement in which the melt volume or crucible has a round cross-section.
- the shape of the magnetic heater is adapted to this round cross-section. This arrangement can be operated in the same way as the arrangement of Figure 2.
- the activation of the magnetic heaters can basically be carried out in the present method such that a part of the magnetic heaters has only one direct current component, so that the power supply is simplified.
- the lack of AC ⁇ components in individual magnetic heaters lead to the asymmetry in the Lorentz force distribution.
- the asymmetric Lorentz force distribution is achieved by different geometric shapes of the magnetic heaters on the different sides, for example, as shown in Figure 3c.
- the flow pattern here changes in the case of a silicon melt in a square crucible with an edge length of 22 cm within about 10 to 20 s after a switching operation. A switching period of 500 s (time between two switching operations) may be sufficient to achieve a time-averaged homogeneous temperature field on one side, but on the other hand the flow speed in each state still sufficiently high to ensure a good mixing.
- Segments or magnetic heaters can be achieved that the number of power supplies for the segments and current feedthroughs through the plant boiler may be reduced (see Figure 4). All segments can still have their own connections, so that the circuit and thus the Lorentz force distribution can be changed flexibly during the crystal growth process without any change in the arrangement of the segments.
- FIG. 4 shows various examples of the
- FIG. 4b shows an example of the interconnection of a ceiling heater made up of six segments, with a phase shift to the center being indicated in the figure. In each case two of the magnetic heaters or segments are in the manner shown in series
- Figure 4c shows another example of the control of a ceiling heater of six
- Solidification or crystallization is not exceeded and, for example, crystallization of multicrystalline silicon results in no or less interfering SiC or Si 3 N 4 precipitates.
- a closer approximation to the limiting case of a pure results convective transport in the melt. This leads to a more uniform incorporation of foreign atoms and
- An asymmetric control of the magnetic heaters in conjunction with a switching of individual heating segments ensures that the good mixing in the melt can be set simultaneously with a homogeneous temperature field in the vicinity of the phase boundary.
- This homogeneous temperature field is necessary when a symmetrical, almost flat or slightly convex shape of the solidification front or crystallization front scored and the formation of
- Crystal defects for example.
- dislocations to be suppressed which are considered, for example.
- photovoltaics for use in photovoltaics as extremely harmful.
- magnetic heaters for generating the magnetic fields are used in the present examples, the method and the arrangement can of course also be separate from the heating elements Have means for generating the magnetic fields, for example. Electromagnets, then as present
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/DE2009/001798 WO2011076157A1 (de) | 2009-12-21 | 2009-12-21 | Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze |
DE112009005457T DE112009005457A5 (de) | 2009-12-21 | 2009-12-21 | Verfahren und Anordnung zur Beeinflussung der Schmelzkonvektion bei der Herstellung eines Festkörpers aus einer elektrisch leitfähigen Schmelze |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/DE2009/001798 WO2011076157A1 (de) | 2009-12-21 | 2009-12-21 | Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze |
Publications (1)
Publication Number | Publication Date |
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WO2011076157A1 true WO2011076157A1 (de) | 2011-06-30 |
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PCT/DE2009/001798 WO2011076157A1 (de) | 2009-12-21 | 2009-12-21 | Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze |
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DE (1) | DE112009005457A5 (de) |
WO (1) | WO2011076157A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013004745A1 (de) | 2011-07-06 | 2013-01-10 | Schott Solar Ag | Verfahren und vorrichtung zum gerichteten erstarren einer nichtmetall-schmelze |
WO2014202284A1 (de) * | 2013-06-21 | 2014-12-24 | Forschungsverbund Berlin E.V. | Kristallisationsanlage und kristallisationsverfahren zur kristallisation aus elektrisch leitenden schmelzen sowie über das verfahren erhältliche ingots |
CN108193279A (zh) * | 2018-03-30 | 2018-06-22 | 天津工业大学 | 一种具有行波磁场的锑铟镓晶体生长炉 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0036302A1 (de) * | 1980-03-13 | 1981-09-23 | Co-Steel International Limited | Elektromagnetischer Rührapparat |
US20040118334A1 (en) * | 2002-12-19 | 2004-06-24 | Wacker Siltronic Ag | Silicon single crystal, and process for producing it |
DE10349339A1 (de) | 2003-10-23 | 2005-06-16 | Crystal Growing Systems Gmbh | Kristallzüchtungsanlage |
EP1849892A1 (de) | 2006-04-27 | 2007-10-31 | Deutsche Solar AG | Ofen für Nichtmetall-Schmelzen |
US20080063025A1 (en) * | 2004-12-08 | 2008-03-13 | Fishman Oleg S | Electric Induction Heating, Melting and Stirring of Materials Non-Electrically Conductive in the Solid State |
EP2022876A1 (de) * | 2007-05-30 | 2009-02-11 | SUMCO Corporation | Vorrichtung zum hochziehen von siliciumeinkristallen |
-
2009
- 2009-12-21 DE DE112009005457T patent/DE112009005457A5/de not_active Withdrawn
- 2009-12-21 WO PCT/DE2009/001798 patent/WO2011076157A1/de active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0036302A1 (de) * | 1980-03-13 | 1981-09-23 | Co-Steel International Limited | Elektromagnetischer Rührapparat |
US20040118334A1 (en) * | 2002-12-19 | 2004-06-24 | Wacker Siltronic Ag | Silicon single crystal, and process for producing it |
DE10259588A1 (de) | 2002-12-19 | 2004-07-15 | Siltronic Ag | Einkristall aus Silicium und Verfahren zu dessen Herstellung |
DE10349339A1 (de) | 2003-10-23 | 2005-06-16 | Crystal Growing Systems Gmbh | Kristallzüchtungsanlage |
US20080063025A1 (en) * | 2004-12-08 | 2008-03-13 | Fishman Oleg S | Electric Induction Heating, Melting and Stirring of Materials Non-Electrically Conductive in the Solid State |
EP1849892A1 (de) | 2006-04-27 | 2007-10-31 | Deutsche Solar AG | Ofen für Nichtmetall-Schmelzen |
EP2022876A1 (de) * | 2007-05-30 | 2009-02-11 | SUMCO Corporation | Vorrichtung zum hochziehen von siliciumeinkristallen |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013004745A1 (de) | 2011-07-06 | 2013-01-10 | Schott Solar Ag | Verfahren und vorrichtung zum gerichteten erstarren einer nichtmetall-schmelze |
DE102011051608A1 (de) | 2011-07-06 | 2013-01-10 | Schott Solar Ag | Verfahren und Vorrichtung zum gerichteten Erstarren einer Nichtmetall-Schmelze |
WO2014202284A1 (de) * | 2013-06-21 | 2014-12-24 | Forschungsverbund Berlin E.V. | Kristallisationsanlage und kristallisationsverfahren zur kristallisation aus elektrisch leitenden schmelzen sowie über das verfahren erhältliche ingots |
CN108193279A (zh) * | 2018-03-30 | 2018-06-22 | 天津工业大学 | 一种具有行波磁场的锑铟镓晶体生长炉 |
Also Published As
Publication number | Publication date |
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DE112009005457A5 (de) | 2012-10-31 |
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