WO2011076056A1 - Chip with version number and method for modifying chip version number thereof - Google Patents

Chip with version number and method for modifying chip version number thereof Download PDF

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Publication number
WO2011076056A1
WO2011076056A1 PCT/CN2010/079364 CN2010079364W WO2011076056A1 WO 2011076056 A1 WO2011076056 A1 WO 2011076056A1 CN 2010079364 W CN2010079364 W CN 2010079364W WO 2011076056 A1 WO2011076056 A1 WO 2011076056A1
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metal layer
layer
channel
metal
channels
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PCT/CN2010/079364
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French (fr)
Chinese (zh)
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桂阳
齐亚军
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炬力集成电路设计有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54433Marks applied to semiconductor devices or parts containing identification or tracking information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54433Marks applied to semiconductor devices or parts containing identification or tracking information
    • H01L2223/5444Marks applied to semiconductor devices or parts containing identification or tracking information for electrical read out
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to the field of chip design, and in particular to a modification technique of a chip version number.
  • Chip version is used to identify integrated circuits (Integrated Circuit) , referred to as the 'IC') version of the chip.
  • chip version is usually represented by a number of binary digits. Take 4 digits as an example, version 1 The ID is 4'b0000, the version 2 is identified as 4'b0001, the version 3 is identified as 4'b0010, and so on, and the version 15 is identified as 4'b1111.
  • 4'b0000 is a flag indicating that all 4 bits are 0.
  • Other similar tags have similar meanings.
  • the chip version information will change and the corresponding bits need to be modified. For example, from version 1 (4'b0000) to version 2 (4'b0001), the least significant bit needs to be modified; from version 2 (4'b0001) to version 3 (4'b0010), the least significant bit and the second lowest bit need to be modified... Other cases can be analogized.
  • RTL Register Transfer Level
  • netlist After that, perform network synthesis (logic synthesis) to get netlist (netlist).
  • placer placer
  • router route
  • get placed & routed netlist A netlist with layout and wiring.
  • the resulting netlist is only modified as necessary (modify the design bug) compared to the original netlist. Or meet new requirements), so in the foundry factory, only one or several layers of metal need to be re-masked instead of all, thus greatly reducing the cost of fab.
  • an embodiment of the present invention provides a chip having a version number, including N stacked in sequence. a metal layer, a via layer between each two adjacent metal layers, and a device layer, wherein the N metal layers are sequentially from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; at least one set of channels in the chip, each set of channels having the following characteristics:
  • Each group of channels includes two independent channels that are not connected to each other;
  • Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
  • One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer;
  • one of the two channels is taken out as a bit of the version number.
  • An embodiment of the present invention further provides a method for modifying a version number of the above chip, comprising the following steps:
  • the specified metal layer that can be modified is neither the top N a metal layer, which is not the first metal layer at the bottom, cuts two metal wires corresponding to two channels in the specified metal layer to form four portions, the first portion and the first channel in the channel group
  • the upper layers are connected, the second part is connected to the lower layers of the original first channel, the third part is connected to the upper layers of the original second channel in the channel group, and the fourth part is connected to the original second channel
  • the following layers are connected;
  • the first portion and the fourth portion are connected by a metal wire, and the second portion and the third portion are connected by a metal wire.
  • Embodiments of the present invention also provide a method of modifying a version number of a chip, the chip including N stacked in sequence a metal layer, a via layer between each two adjacent metal layers, and a device layer, wherein the N metal layers are sequentially from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; at least one set of channels in the chip, each set of channels having the following characteristics:
  • Each group of channels includes two independent channels that are not connected to each other;
  • Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
  • One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer.
  • one of the two channels is taken out as a bit of the version number
  • Each cross structure includes eight nodes centered on one via layer, wherein
  • the first to fourth nodes are located adjacent to the metal layer above the via layer, and the fifth to eighth nodes are located adjacent to the metal layer below the via layer;
  • the first and second nodes are connected by metal wires
  • the third and fourth nodes are connected by metal wires
  • the fifth and sixth nodes are connected by metal wires
  • the seventh and eighth nodes are connected by metal wires
  • the first and fifth nodes and the through holes therebetween form part of one channel, and the third and seventh nodes and the through holes therebetween form part of the other channel;
  • the method includes the following steps:
  • the through hole between the original first and fifth nodes is disconnected, and the through hole between the third and seventh nodes is disconnected, in the second and eighth
  • a new through hole is set between the nodes, and a new through hole is set between the fourth and sixth nodes.
  • a pair of mutually independent channels are arranged in the chip, and the high-level and low-level are respectively connected from the bottom layer to the top layer, and one of the channels is selected as a bit of the version number, so that the modification of the chip version number is no longer dependent on the specific layer.
  • the chip version number can be modified in any metal layer. Thus, in The foundry factory does not modify one or more layers of metal or via to modify the chip version number, which greatly saves the fab cost.
  • At least one cross structure is set in each group of channels, and only one through hole layer can be modified to implement the modification of the chip version number.
  • a cross structure is provided for each of the via layers, and the modification of the chip version number can be realized by modifying any one of the via layers.
  • a set of channels is set for each bit in the version number, and any change of each bit of the version number can be realized as long as it is modified at any one layer.
  • FIG. 1 is a schematic diagram of a normal IC design flow in the prior art
  • FIG. 2 is a schematic diagram of a normal IC design modification process in the prior art
  • Figure 3 is a schematic diagram of the ECO modification process in the prior art
  • FIG. 4 is a schematic view showing the structure of a chip of four metal layers in the first embodiment of the present invention.
  • FIG. 5 is a schematic flow chart of a method for modifying a chip version number in a first embodiment of the present invention
  • FIG. 8 is a schematic flow chart of a method for modifying a chip version number in a second embodiment of the present invention.
  • FIG. 9 is a schematic view showing the structure of a chip of four metal layers in a second embodiment of the present invention.
  • Figure 10 is a plan view of the cross structure of Figure 9;
  • FIG. 11 is a schematic diagram of modifying a chip version number in a via layer in a second embodiment of the present invention.
  • Figure 12 is a plan view showing the modified cross structure in the second embodiment of the present invention.
  • FIG. 13 is a first wiring manner of four metal layer chips in a third embodiment of the present invention.
  • Fig. 15 is a third wiring pattern of four metal layer chips in the third embodiment of the present invention.
  • a first embodiment of the present invention relates to a chip having a version number and a method of modifying a chip version number.
  • the chip comprises N metal layers stacked in sequence, one via layer between each two adjacent metal layers, and one and N a device layer adjacent to one side of the metal layer, wherein the N metal layers are sequentially a first metal layer to an Nth metal layer, N is an integer greater than 1, and the device layer is adjacent to the first metal layer .
  • each set of channels has the following characteristics:
  • Each group of channels includes two independent channels that are not connected to each other.
  • Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth Metal layer.
  • Each channel behaves as a length of metal wire in each metal layer and as a through hole in each via layer.
  • One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer.
  • the low level and the high level are the terms in the art.
  • the low level is the level representing the logic '0'
  • the high level is the logic '1'.
  • 'Level Preferably, one channel is connected to a unit providing a stable low level (TieLO), and the other channel is connected to a unit providing a stable high level (TieHI) ) Connect. It can also be one channel grounded (low level) and the other channel connected to the supply voltage (high level).
  • Which of the two channels is derived depends entirely on the current version number at design time, if the current version number needs to represent logic '0' in the specified bit ', then the channel that is connected to the low level is drawn. If the current version number needs to represent the logic '1' in the specified bit, the channel with the high level is drawn.
  • a pair of mutually independent channels are arranged in the chip, and the high-level and low-level are respectively connected from the bottom layer to the top layer, and one of the channels is selected as a bit of the version number, so that the modification of the chip version number is no longer dependent on the specific layer.
  • the chip version number can be modified in any metal layer.
  • each group of channels corresponding to one bit of the version number. After setting a set of channels for each bit in the version number, any change in the bits of the version number can be achieved by modifying any of the metal layers.
  • the chip has four metal layers, namely metal1, metal2, metal3, and Metal4 has three via layers sandwiched between four metal layers, namely via1, via2, and via3.
  • channel 1 and channel 2 Two channels (channel 1 and channel 2), starting from metal1, running through the metal layers and via layers, all the way to Metal4.
  • channel 1 is connected to the TieLO of the device layer
  • channel 2 is connected to the TieHI of the device layer.
  • channel 1 A read-only logic '1' can be derived
  • channel 2 can lead to a read-only logic '0'.
  • the chip version numbers if the bit is designed to be logical '0', then the channel 1 is taken out. If the bit is designed to be logical '1', then channel 2 is drawn.
  • step 501 Medium, determining a set of channels corresponding to the bits of the version number to be modified. Not every bit changes every time a chip is redesigned, sometimes it only changes by one or a few bits.
  • step 502 it is determined which layer of the specified metal layer is available for modification, and if it is the top layer, the process proceeds to step 503. If it is the bottom layer, the process proceeds to step 506, and otherwise, the process proceeds to step 504.
  • ECO When the mode is modified, only part of the metal layer will be modified, and the revision of the chip version number should be performed in the metal layers to be modified.
  • These metal layers are the metal layers that can be modified. Because the modification of the version number can be implemented as long as any metal layer is modified, if there are multiple metal layers that can be modified, it is necessary to specify one of the metal layers to implement the modification of the version number. This metal layer is in the embodiment of the present invention. It is referred to as the specified metal layer that can be modified.
  • step 503 if the specified metal layer that can be modified is the Nth
  • the metal layer (top layer) determines the channel of the group channel that was originally extracted as the version number, cuts off the channel, and introduces another channel in the group channel as a bit of the version number. This process ends thereafter.
  • step 504 if the specified metal layer that can be modified is neither the top N a metal layer, which is not the first metal layer at the bottom, cuts two metal wires corresponding to two channels in the specified metal layer to form four portions, the first portion and the first channel in the channel group The upper layers are connected, the second part is connected to the lower layers of the original first channel, the third part is connected to the upper layers of the original second channel in the channel group, and the fourth part is connected to the original second channel The following layers are connected.
  • step 505 In the specified metal layer, the first portion and the fourth portion are connected by a metal wire, and the second portion and the third portion are connected by a metal wire. This process ends thereafter.
  • the specified metal layer that can be modified is the first metal layer
  • the channel that was originally connected to the low level is changed to the high level
  • the channel that was originally connected to the high level is changed to the low level.
  • a similar step 503 can be used regardless of which layer of the specified metal layer is available for modification.
  • the method is processed in 504, that is, the two metal wires in the specified metal layer are cut off, and the four portions formed after the switching are cross-connected. In other words, steps 502, 503, and 506 are omitted.
  • the following takes the chip in FIG. 4 as an example to specifically describe the method for modifying the chip version number.
  • the metal2 The two metal wires in the middle are cut, and the four portions formed after the cutting are cross-connected.
  • indicates that the line is disconnected, and the curve indicates that the corresponding node is reconnected.
  • a second embodiment of the present invention relates to a chip having a version number, and a method of modifying a chip version number.
  • the second embodiment is improved on the basis of the first embodiment, and the main improvement is that one or more cross structures are arranged in each group of channels, so that only one through hole layer can be modified to realize the modification of the chip version number. Especially suitable for When the ECO is modified, only the via layer needs to be modified. Specifically:
  • Each cross structure includes eight nodes centered on one via layer, wherein
  • the first to fourth nodes are located on one side of the metal layer adjacent to the via layer, and the fifth to eighth nodes are located on the other metal layer adjacent to the other side of the via layer.
  • the first and second nodes are connected by metal wires
  • the third and fourth nodes are connected by metal wires
  • the fifth and sixth nodes are connected by metal wires
  • the seventh and eighth nodes are connected by metal wires.
  • the second and eighth node positions corresponds to the first and fifth node positions, the second and eighth node positions, the third and seventh node positions, and the fourth and sixth node positions.
  • the first and fifth nodes and the through holes therebetween form part of one channel
  • the third and seventh nodes and the through holes therebetween form part of the other channel.
  • step 801 a set of channels corresponding to the bits to be modified are determined.
  • step 802 For the set of channels, the through holes between the original first and fifth nodes are disconnected in the specified via layer that can be modified.
  • step 803 where the through holes between the third and seventh nodes are disconnected.
  • step 804 a new via hole is provided between the second and eighth nodes.
  • step 805 a new via hole is provided between the fourth and sixth nodes.
  • Steps 802 to 805 The four steps can be interchanged in any order.
  • FIG. 9 shows the via layer via1 A chip structure with a cross structure is set.
  • B2 corresponds to the first node
  • C2 corresponds to the second node
  • B2' corresponds to the third node
  • C2' corresponds to the fourth node
  • B1 corresponds to the fifth node
  • C1 corresponds to the sixth node
  • B1' corresponds to the seventh node
  • C1' corresponds to the eighth node.
  • Figure 9 is a schematic diagram, and the information of each node in the corresponding relationship is not fully expressed.
  • Figure 10 is Figure 9.
  • the plan view of the middle cross structure can better represent the correspondence of each node.
  • B1 corresponds to B2, and B1' corresponds to B2'.
  • C1' corresponds to C2, and C1 corresponds to C2'.
  • B1(B2) means that B1 and B2 have the same plane coordinates
  • B1'(B2') means B1' and B2'.
  • the plane coordinates are the same
  • C1(C2') means C1 and C2' plane coordinates are the same
  • C1'(C2) means C1' and C2
  • the plane coordinates are the same.
  • the small circle in the figure indicates that there is a through hole, such as B1(B2) and B1'(B2'). Two locations.
  • the ⁇ in the figure indicates that there is no actual through hole, and only one through hole is reserved in the two metal layers adjacent to the via layer, such as C1 (C2') and C1' (C2). .
  • a third embodiment of the present invention relates to a chip having a version number, and a method of modifying a chip version number.
  • the third embodiment is improved on the basis of the second embodiment, and the main improvement is that a cross structure is provided for each of the via layers, so that the chip version number can be realized by modifying any one of the via layers. Modifications.
  • the via layer is provided with a cross structure, which is suitable for knowing in advance which of the via layers may be modified.
  • N-1 exists in each group of channels.
  • a cross structure each of which is centered on a different via layer.
  • Figure 13 can be used.
  • the third embodiment can realize the purpose of modifying the chip version number by modifying any metal layer or the via layer, making the modification more flexible and effectively saving the revision cost.

Abstract

A chip with a version number and a method for modifying the chip version number thereof, belonging to the field of chip design, are provided. The chip structure comprises a pair of independent channels (channel 1, channel 2) running through the chip from the bottom to the top and connecting to a high voltage and a low voltage respectively, wherein one of the channels is led out as a bit of the version number, so that the modification of the chip version number is no longer dependent on a specific layer, and each of metal layers (metal 1, metal 2, metal 3, metal 4) can achieve the chip version number modification. A cross-layer structure is set in each via layer (via 1, via 2, via 3). As long as any via layer is changed, the chip version number is modified.

Description

具有版本号的芯片及修改芯片版本号的方法Chip with version number and method for modifying chip version number 技术领域Technical field
本发明涉及芯片设计领域,特别涉及芯片版本号的修改技术。  The present invention relates to the field of chip design, and in particular to a modification technique of a chip version number.
背景技术Background technique
芯片版本号( chip version )用于标识集成电路( Integrated Circuit ,简称' IC ')芯片的版本。 Chip version is used to identify integrated circuits (Integrated Circuit) , referred to as the 'IC') version of the chip.
在 IC 设计中, chip version 通常用若干位二进制数来表示。以 4 位为例,将版本 1 标识为 4'b0000 ,版本 2 标识为 4'b0001 ,版本 3 标识为 4'b0010 ……依此类推,版本 15 标识为 4'b1111 。本发明中, 4'b0000 是表示 4 个比特都为 0 的标记,其它类似的标记有类似的含义。 In IC design, chip version is usually represented by a number of binary digits. Take 4 digits as an example, version 1 The ID is 4'b0000, the version 2 is identified as 4'b0001, the version 3 is identified as 4'b0010, and so on, and the version 15 is identified as 4'b1111. In the present invention, 4'b0000 is a flag indicating that all 4 bits are 0. Other similar tags have similar meanings.
IC 改版时,芯片版本信息会发生变化,需要修改对应的位。比如,从版本 1(4'b0000) 到版本 2(4'b0001) ,需要修改最低位;从版本 2(4'b0001) 到版本 3(4'b0010) 需要修改最低位和次低位……其它情况可类推。 When the IC is revised, the chip version information will change and the corresponding bits need to be modified. For example, from version 1 (4'b0000) to version 2 (4'b0001), the least significant bit needs to be modified; from version 2 (4'b0001) to version 3 (4'b0010), the least significant bit and the second lowest bit need to be modified... Other cases can be analogized.
现有技术中,通常会用一个只读寄存器来记录芯片版本号,在 IC 设计时完成。正常的 IC 设计流程如图 1 所示。 In the prior art, a read-only register is usually used to record the chip version number, which is done at the time of IC design. The normal IC design process is shown in Figure 1. Shown.
首先完成寄存器传输级( Register Transfer Level ,简称' RTL ')的设计。在 RTL 设计中,电路的行为被定义成寄存器之间的信号传输,或者对这些信号的逻辑操作,简单地讲, RTL 就是用硬件描述语言(如 Verilog 或 VHDL )描述你想达到的功能。 First, the design of the Register Transfer Level ('RTT') is completed. in In RTL design, the behavior of a circuit is defined as the signal transmission between registers, or the logical operation of these signals. Simply put, RTL is a hardware description language (such as Verilog or VHDL). ) Describe the features you want to achieve.
此后进行 logic synthesis( 逻辑综合 ) ,得到 netlist (网表)。 After that, perform network synthesis (logic synthesis) to get netlist (netlist).
此后用 placer (布局器)进行布局,得到 placed netlist (经布局的网表)。 Then use placer (placer) to layout, get placed netlist (layout netlist).
此后用 router (布线器)进行布线,得到 placed & routed netlist (经布局和布线的网表)。 Then use router (router) to route, get placed & routed netlist (A netlist with layout and wiring).
如果由于设计 bug (缺陷)或者新的需求而需要修改 RTL 时,通常会用新的 RTL 重复整个设计流程,如图 2 所示,以得到新的完整的经布局和布线的网表。 If you need to modify the RTL due to a design bug (defect) or new requirements, you will usually use a new RTL Repeat the entire design process, as shown in Figure 2, to get a new complete layout and routing netlist.
使用图 2 所示的修改方法,由于重新逻辑综合并重新布局布线,最终得到的网表和图 1 中得到的网表有很大的差别。在 foundry (代工)厂,需要对所有的 metal 层(金属层)重新做光罩, fab 成本(工厂成本)很高。 Using the modification method shown in Figure 2, due to re-synthesis and re-layout, the resulting netlist and Figure 1 The netlists obtained in this are quite different. In the foundry factory, it is necessary to re-make all the metal layers (metal layers), and the fab cost (factory cost) is high.
为了解决图 2 中流程所存在问题,出现了一种有别于正常 IC 设计流程的设计修改方法--工程变更指令( Engineering Change Order ,简称' ECO ')。与正常的设计修改方法相比, ECO 风险更小,时间更短,成本更低。因此,在 IC 改版设计中常常采用 ECO 的方法。 In order to solve the problem in the process in Figure 2, there is a design modification method that is different from the normal IC design flow--engineering change instruction ( Engineering Change Order, referred to as 'ECO'). ECO is less risky, shorter, and less costly than normal design modifications. So at the IC The ECO method is often used in revision design.
ECO 的流程如图 3 所示。工程师对 RTL 进行修改,得到新的 RTL 之后,不再进行 logic synthesis 、 placer 和 router 的步骤(在图 3 中这些步骤以单线表示删除),而是直接在经布局和布线的旧网表上修改,得到经布局和布线的 ECO 网表。 The process of ECO is shown in Figure 3. After the engineer modified the RTL and got the new RTL, the logic is no longer executed. The steps of synthesis, placer, and router (these steps are removed in a single line in Figure 3), but are modified directly on the old netlist that is laid out and routed, resulting in layout and routing. ECO netlist.
采用图 3 所示 ECO 的方法,最终得到的网表和原先的网表相比,只做了必要的修改(修改设计 bug 或满足新需求),因此在 foundry 厂,只需要对其中的一层或几层 metal 重新做光罩而不是全部,因而大大降低了 fab 成本。 Using the ECO method shown in Figure 3, the resulting netlist is only modified as necessary (modify the design bug) compared to the original netlist. Or meet new requirements), so in the foundry factory, only one or several layers of metal need to be re-masked instead of all, thus greatly reducing the cost of fab.
为了修改设计 bug 或满足新需求,采用 ECO 进行 IC 改版时,可能只需要修改其中的一个或几个 metal 层,甚至可能只需要改动某个 via 层(通孔层),而完全不需要改动 metal 层。但是,修改芯片版本号涉及的 metal 层或 via 层可能并不在其中。这样,为了修改芯片版本号,需要多修改一层或几层 metal 或 via ,大大增加了 fab 成本。In order to modify design bugs or meet new requirements, when using ECO for IC revision, you may only need to modify one or several of them. The metal layer may even need to modify a via layer (via layer) without changing the metal layer at all. However, modifying the metal layer or via involved in the chip version number The layer may not be in it. In this way, in order to modify the chip version number, it is necessary to modify one or more layers of metal or via, which greatly increases the fab cost.
技术问题technical problem
本发明的目的在于提供一种具有版本号的芯片及修改芯片版本号的方法,在任一层都可以实现芯片版本号的修改,不再依赖于特定的层。 It is an object of the present invention to provide a chip having a version number and a method of modifying the version number of the chip, and the modification of the chip version number can be implemented at any layer, and is no longer dependent on a specific layer.
技术解决方案Technical solution
为解决上述技术问题,本发明的实施方式提供了一种具有版本号的芯片,包括依次层叠的 N 个金属层,每两个相邻金属层之间有一个通孔层, 以及一个器件层,所述 N 个金属层依次为第一个金属层至第 N 个金属层, N 为大于 1 的整数,所述器件层与第一个金属层相邻; 该芯片中至少存在一组通道,每组通道具有以下特征: In order to solve the above technical problem, an embodiment of the present invention provides a chip having a version number, including N stacked in sequence. a metal layer, a via layer between each two adjacent metal layers, and a device layer, wherein the N metal layers are sequentially from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; at least one set of channels in the chip, each set of channels having the following characteristics:
每组通道包括两个相互不连通的独立通道; Each group of channels includes two independent channels that are not connected to each other;
每个通道分别从第一个金属层开始,贯穿各金属层和通孔层,一直连通到第 N 个金属层;每个通道在每个金属层表现为一段金属线,在每个通孔层表现为一个通孔; Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
一个通道通过第一个金属层与器件层的低电平连接,另一个通道通过第一个金属层与器件层的高电平连接; One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer;
在第 N 个金属层中,两个通道中的一个被引出作为版本号的一个比特。 In the Nth metal layer, one of the two channels is taken out as a bit of the version number.
本发明的实施方式还提供了一种修改上述芯片的版本号的方法,包括以下步骤: An embodiment of the present invention further provides a method for modifying a version number of the above chip, comprising the following steps:
确定要修改的比特所对应的一组通道; Determining a set of channels corresponding to the bits to be modified;
对于该组通道,如果可供修改的指定金属层既不是最上面的第 N 个金属层,也不是最下面的第一个金属层,则切断该指定金属层中两个通道所对应的两段金属线,形成四个部分,第一部分与该通道组中原先第一个通道的上面各层连接,第二部分与原先第一个通道的下面各层连接,第三部分与该通道组中原先第二个通道的上面各层连接,第四部分与原先第二个通道的下面各层连接; For this set of channels, if the specified metal layer that can be modified is neither the top N a metal layer, which is not the first metal layer at the bottom, cuts two metal wires corresponding to two channels in the specified metal layer to form four portions, the first portion and the first channel in the channel group The upper layers are connected, the second part is connected to the lower layers of the original first channel, the third part is connected to the upper layers of the original second channel in the channel group, and the fourth part is connected to the original second channel The following layers are connected;
在该指定金属层中,将第一部分与第四部分以金属线连接,将第二部分与第三部分以金属线连接。 In the specified metal layer, the first portion and the fourth portion are connected by a metal wire, and the second portion and the third portion are connected by a metal wire.
本发明的实施方式还提供了一种修改芯片的版本号的方法,该芯片包括依次层叠的 N 个金属层,每两个相邻金属层之间有一个通孔层, 以及一个器件层,所述 N 个金属层依次为第一个金属层至第 N 个金属层, N 为大于 1 的整数,所述器件层与第一个金属层相邻; 该芯片中至少存在一组通道,每组通道具有以下特征: Embodiments of the present invention also provide a method of modifying a version number of a chip, the chip including N stacked in sequence a metal layer, a via layer between each two adjacent metal layers, and a device layer, wherein the N metal layers are sequentially from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; at least one set of channels in the chip, each set of channels having the following characteristics:
每组通道包括两个相互不连通的独立通道; Each group of channels includes two independent channels that are not connected to each other;
每个通道分别从第一个金属层开始,贯穿各金属层和通孔层,一直连通到第 N 个金属层;每个通道在每个金属层表现为一段金属线,在每个通孔层表现为一个通孔; Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
一个通道通过第一个金属层与器件层的低电平连接,另一个通道通过第一个金属层与器件层的高电平连接 ; One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer. ;
在第 N 个金属层中,两个通道中的一个被引出作为版本号的一个比特; In the Nth metal layer, one of the two channels is taken out as a bit of the version number;
每组通道中至少存在一个交叉结构; There is at least one cross structure in each group of channels;
每个交叉结构包括以一个通孔层为中心的八个节点,其中, Each cross structure includes eight nodes centered on one via layer, wherein
第一至第四节点位于该通孔层上面相邻的金属层,第五至第八节点位于该通孔层下面相邻的金属层; The first to fourth nodes are located adjacent to the metal layer above the via layer, and the fifth to eighth nodes are located adjacent to the metal layer below the via layer;
第一与第二节点间以金属线相连,第三与第四节点间以金属线相连,第五与第六节点间以金属线相连,第七与第八节点间以金属线相连; The first and second nodes are connected by metal wires, the third and fourth nodes are connected by metal wires, the fifth and sixth nodes are connected by metal wires, and the seventh and eighth nodes are connected by metal wires;
第一与第五节点位置对应,第二与第八节点位置对应,第三与第七节点位置对应,第四与第六节点位置对应; Corresponding to the first and fifth node positions, the second and eighth node positions, the third and seventh node positions, and the fourth and sixth node positions;
第一与第五节点间有一个通孔,第三与第七节点间有一个通孔; There is a through hole between the first node and the fifth node, and a through hole between the third node and the seventh node;
在该交叉结构所在的那组通道中,第一、第五节点以及它们之间的通孔构成一个通道的一部分,第三、第七节点以及它们之间的通孔构成另一个通道的一部分; In the set of channels in which the intersecting structure is located, the first and fifth nodes and the through holes therebetween form part of one channel, and the third and seventh nodes and the through holes therebetween form part of the other channel;
方法包括以下步骤: The method includes the following steps:
确定要修改的比特所对应的一组通道; Determining a set of channels corresponding to the bits to be modified;
对于该组通道,在可供修改的指定通孔层中,断开原第一与第五节点之间的通孔,断开第三与第七节点间的通孔,在第二与第八节点间设置新通孔,在第四与第六节点间设置新通孔。 For the set of channels, in the specified through hole layer that can be modified, the through hole between the original first and fifth nodes is disconnected, and the through hole between the third and seventh nodes is disconnected, in the second and eighth A new through hole is set between the nodes, and a new through hole is set between the fourth and sixth nodes.
有益效果Beneficial effect
本发明实施方式与现有技术相比,主要区别及其效果在于: Compared with the prior art, the main differences and effects of the embodiments of the present invention are as follows:
在芯片中设置一对相互独立的通道,从底层贯通到顶层,分别接高、低电平,选择其中一个通道引出作为版本号的一个比特,使得芯片版本号的修改不再依赖于特定的层,在任一金属层都可以实现芯片版本号的修改。因此,在 foundry 厂,不会为了修改芯片版本号,而多修改一层或几层 metal 或 via ,大大节省了 fab 成本。 A pair of mutually independent channels are arranged in the chip, and the high-level and low-level are respectively connected from the bottom layer to the top layer, and one of the channels is selected as a bit of the version number, so that the modification of the chip version number is no longer dependent on the specific layer. The chip version number can be modified in any metal layer. Thus, in The foundry factory does not modify one or more layers of metal or via to modify the chip version number, which greatly saves the fab cost.
进一步地,在每组通道至少设置一个交叉结构,可以只修改一个通孔层而实现芯片版本号的修改。 Further, at least one cross structure is set in each group of channels, and only one through hole layer can be modified to implement the modification of the chip version number.
进一步地,为每一个通孔层都设置一个交叉结构,只要修改任意一个通孔层,都可以实现芯片版本号的修改。 Further, a cross structure is provided for each of the via layers, and the modification of the chip version number can be realized by modifying any one of the via layers.
进一步地,为版本号中的每一个比特都设置一组通道,只要在任意的一个层作修改,就可以实现版本号各比特的任意变化。 Further, a set of channels is set for each bit in the version number, and any change of each bit of the version number can be realized as long as it is modified at any one layer.
附图说明DRAWINGS
图 1 是现有技术中正常 IC 设计流程示意图; 1 is a schematic diagram of a normal IC design flow in the prior art;
图 2 是现有技术中正常 IC 设计修改流程示意图; 2 is a schematic diagram of a normal IC design modification process in the prior art;
图 3 是现有技术中 ECO 修改流程示意图; Figure 3 is a schematic diagram of the ECO modification process in the prior art;
图 4 是本发明第一实施方式中 4 个金属层的芯片结构示意图; 4 is a schematic view showing the structure of a chip of four metal layers in the first embodiment of the present invention;
图 5 是本发明第一实施方式中修改芯片版本号的方法流程示意图; 5 is a schematic flow chart of a method for modifying a chip version number in a first embodiment of the present invention;
图 6 是本发明第一实施方式中在 metal2 层对版本号的一个比特进行修改的例子; 6 is an example of modifying a bit of a version number at the metal2 layer in the first embodiment of the present invention;
图 7 是本发明第一实施方式中在 metal4 层对版本号的一个比特进行再次修改的例子; 7 is an example of modifying a bit of a version number at the metal4 layer in the first embodiment of the present invention;
图 8 是本发明第二实施方式中修改芯片版本号的方法流程示意图; 8 is a schematic flow chart of a method for modifying a chip version number in a second embodiment of the present invention;
图 9 是本发明第二实施方式中 4 个金属层的芯片结构示意图; 9 is a schematic view showing the structure of a chip of four metal layers in a second embodiment of the present invention;
图 10 是图 9 中交叉结构的平面示意图; Figure 10 is a plan view of the cross structure of Figure 9;
图 11 是本发明第二实施方式中在 via 层修改芯片版本号的示意图; 11 is a schematic diagram of modifying a chip version number in a via layer in a second embodiment of the present invention;
图 12 是本发明第二实施方式中修改后的交叉结构平面示意图; Figure 12 is a plan view showing the modified cross structure in the second embodiment of the present invention;
图 13 是本发明第三实施方式中 4 个金属层芯片的第一种走线方式; 13 is a first wiring manner of four metal layer chips in a third embodiment of the present invention;
图 14 是本发明第三实施方式中 4 个金属层芯片的第二种走线方式; 14 is a second wiring manner of four metal layer chips in the third embodiment of the present invention;
图 15 是本发明第三实施方式中 4 个金属层芯片的第三种走线方式。 Fig. 15 is a third wiring pattern of four metal layer chips in the third embodiment of the present invention.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
在以下的叙述中,为了使读者更好地理解本申请而提出了许多技术细节。但是,本领域的普通技术人员可以理解,即使没有这些技术细节和基于以下各实施方式的种种变化和修改,也可以实现本申请各权利要求所要求保护的技术方案。 In the following description, numerous technical details are set forth in order to provide the reader with a better understanding of the present application. However, those skilled in the art can understand that the technical solutions claimed in the claims of the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明的实施方式作进一步地详细描述。 The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
本发明第一实施方式涉及一种具有版本号的芯片和一种修改芯片版本号的方法。 A first embodiment of the present invention relates to a chip having a version number and a method of modifying a chip version number.
先对芯片的结构进行说明。 First, the structure of the chip will be described.
该芯片包括依次层叠的 N 个金属层,每两个相邻金属层之间有一个通孔层, 以及一个 与 N 个金属层一侧相邻的 器件层,所述 N 个金属层依次为第一个金属层至第 N 个金属层, N 为大于 1 的整数,所述器件层与第一个金属层相邻。 The chip comprises N metal layers stacked in sequence, one via layer between each two adjacent metal layers, and one and N a device layer adjacent to one side of the metal layer, wherein the N metal layers are sequentially a first metal layer to an Nth metal layer, N is an integer greater than 1, and the device layer is adjacent to the first metal layer .
该芯片中存在一组或多组通道,每组通道具有以下特征: There are one or more sets of channels in the chip, each set of channels has the following characteristics:
每组通道包括两个相互不连通的独立通道。 Each group of channels includes two independent channels that are not connected to each other.
每个通道分别从第一个金属层开始,贯穿各金属层和通孔层,一直连通到第 N 个金属层。每个通道在每个金属层表现为一段金属线,在每个通孔层表现为一个通孔。 Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth Metal layer. Each channel behaves as a length of metal wire in each metal layer and as a through hole in each via layer.
一个通道通过第一个金属层与器件层的低电平连接,另一个通道通过第一个金属层与器件层的高电平连接 。可以理解,低电平、高电平是本领域的术语,本发明的实施方式中,低电平就是代表逻辑' 0 '的电平,而高电平就是代表逻辑' 1 '的电平。优选地,一个通道与提供稳定低电平的单元( TieLO )连接,另一个通道与提供稳定高电平的单元( TieHI )连接。也可以是一个通道接地(低电平),另一个通道接电源电压(高电平)。 One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer. . It can be understood that the low level and the high level are the terms in the art. In the embodiment of the present invention, the low level is the level representing the logic '0', and the high level is the logic '1'. 'Level. Preferably, one channel is connected to a unit providing a stable low level (TieLO), and the other channel is connected to a unit providing a stable high level (TieHI) ) Connect. It can also be one channel grounded (low level) and the other channel connected to the supply voltage (high level).
在第 N 个金属层中,两个通道中只有一个被引出作为版本号的一个比特。另一个未被引出作为版本号的通道如果也要引出的话,可以作为版本号中相应比特的取反值。 At the Nth Of the metal layers, only one of the two channels is taken out as a bit of the version number. Another channel that is not exported as the version number, if it is to be extracted, can be used as the inverse of the corresponding bit in the version number.
两个通道中哪一个被引出完全取决于设计时的当前版本号,如果当前版本号在指定比特位需要表示逻辑' 0 ',则引出其中接低电平的通道,如果当前版本号在指定比特位需要表示逻辑' 1 ',则引出其中接高电平的通道。 Which of the two channels is derived depends entirely on the current version number at design time, if the current version number needs to represent logic '0' in the specified bit ', then the channel that is connected to the low level is drawn. If the current version number needs to represent the logic '1' in the specified bit, the channel with the high level is drawn.
在芯片中设置一对相互独立的通道,从底层贯通到顶层,分别接高、低电平,选择其中一个通道引出作为版本号的一个比特,使得芯片版本号的修改不再依赖于特定的层,在任一金属层都可以实现芯片版本号的修改。 A pair of mutually independent channels are arranged in the chip, and the high-level and low-level are respectively connected from the bottom layer to the top layer, and one of the channels is selected as a bit of the version number, so that the modification of the chip version number is no longer dependent on the specific layer. The chip version number can be modified in any metal layer.
在芯片设计时,如果可以预计版本号中只有部分比特可能被修改,则只要为这些可能被修改的比特设置成对的通道即可,其它不可能被修改的比特可以使用传统的方法进行设计。这样既可以有修改的便利,又能够最大限度地简化芯片设计。 At the time of chip design, if it is expected that only some of the bits in the version number may be modified, it is only necessary to set the paired channels for these potentially modified bits, and other bits that cannot be modified can be designed using conventional methods. This allows for both the convenience of modification and the simplification of chip design.
如果版本号中所有的比特都可能会被修改,假定版本号由 M 个比特组成,则需要在芯片中设置 M 组通道,每组通道分别对应版本号的一个比特。为版本号中的每一个比特都设置一组通道后,只要在任意的一个金属层作修改,就可以实现版本号各比特的任意变化。 If all the bits in the version number may be modified, assuming that the version number consists of M bits, you need to set M in the chip. Group channel, each group of channels corresponding to one bit of the version number. After setting a set of channels for each bit in the version number, any change in the bits of the version number can be achieved by modifying any of the metal layers.
下面以 4 个金属层的芯片为例,对芯版结构进行具体说明。该芯片的结构如图 4 所示。 The following is a detailed description of the core structure by taking a chip of four metal layers as an example. The structure of the chip is shown in Figure 4.
该芯片共有 4 个金属层,分别为 metal1 、 metal2 、 metal3 、和 metal4 , 4 个金属层之间夹着 3 个通孔层,分别为 via1 、 via2 、和 via3 。 The chip has four metal layers, namely metal1, metal2, metal3, and Metal4 has three via layers sandwiched between four metal layers, namely via1, via2, and via3.
两个通道(通道 1 和通道 2 ),从 metal1 开始,贯穿各金属层和通孔层,一直连通到 metal4 。在 metal1 ,通道 1 与器件层的 TieLO 连接,通道 2 与器件层的 TieHI 连接。在 metal4 ,通道 1 可以引出一个只读的逻辑' 1 ',而通道 2 可以引出一个只读的逻辑' 0 '。做为芯片版本号的其中一位,如果该位设计为逻辑' 0 ',则引出通道 1 ,如果该位设计为逻辑' 1 ',则引出通道 2 。 Two channels (channel 1 and channel 2), starting from metal1, running through the metal layers and via layers, all the way to Metal4. At metal1, channel 1 is connected to the TieLO of the device layer, and channel 2 is connected to the TieHI of the device layer. In metal4, channel 1 A read-only logic '1' can be derived, and channel 2 can lead to a read-only logic '0'. As one of the chip version numbers, if the bit is designed to be logical '0', then the channel 1 is taken out. If the bit is designed to be logical '1', then channel 2 is drawn.
下面说明在上述结构的芯片中修改芯片版本号的方法,该方法的流程如图 5 所示。 The method of modifying the chip version number in the chip of the above structure will be described below, and the flow of the method is as shown in FIG. 5.
在步骤 501 中,确定要修改的版本号的比特所对应的一组通道。每次芯片改版时,并不是所有的比特都会变化,有时只会变化 1 个或几个比特。 At step 501 Medium, determining a set of channels corresponding to the bits of the version number to be modified. Not every bit changes every time a chip is redesigned, sometimes it only changes by one or a few bits.
此后进入步骤 502 ,判断可供修改的指定金属层是哪一层,如果是顶层则进入步骤 503 ,如果是底层则进入步骤 506 ,其它情况进入步骤 504 。一般来说,以 ECO 方式进行修改时,只有部分的金属层会被改动,芯片版本号的修改应当在这些本就要被改动的金属层中进行,这些金属层就是可供修改的金属层。因为只要修改任一个金属层就可以实现版本号的修改,所以如果有可供修改的金属层有多个,需要指定其中的一个金属层实现版本号的修改,这个金属层在本发明的实施方式中被称为可供修改的指定金属层。 Thereafter, proceeding to step 502, it is determined which layer of the specified metal layer is available for modification, and if it is the top layer, the process proceeds to step 503. If it is the bottom layer, the process proceeds to step 506, and otherwise, the process proceeds to step 504. Generally speaking, with ECO When the mode is modified, only part of the metal layer will be modified, and the revision of the chip version number should be performed in the metal layers to be modified. These metal layers are the metal layers that can be modified. Because the modification of the version number can be implemented as long as any metal layer is modified, if there are multiple metal layers that can be modified, it is necessary to specify one of the metal layers to implement the modification of the version number. This metal layer is in the embodiment of the present invention. It is referred to as the specified metal layer that can be modified.
在步骤 503 中,如果可供修改的指定金属层是第 N 个金属层(顶层),则确定该组通道中原先被引出作为版本号的那个通道,切断该通道的引出,改将该组通道中另一个通道引出作为版本号的一个比特。此后结束本流程。 In step 503, if the specified metal layer that can be modified is the Nth The metal layer (top layer) determines the channel of the group channel that was originally extracted as the version number, cuts off the channel, and introduces another channel in the group channel as a bit of the version number. This process ends thereafter.
在步骤 504 中,如果可供修改的指定金属层既不是最上面的第 N 个金属层,也不是最下面的第一个金属层,则切断该指定金属层中两个通道所对应的两段金属线,形成四个部分,第一部分与该通道组中原先第一个通道的上面各层连接,第二部分与原先第一个通道的下面各层连接,第三部分与该通道组中原先第二个通道的上面各层连接,第四部分与原先第二个通道的下面各层连接。 In step 504, if the specified metal layer that can be modified is neither the top N a metal layer, which is not the first metal layer at the bottom, cuts two metal wires corresponding to two channels in the specified metal layer to form four portions, the first portion and the first channel in the channel group The upper layers are connected, the second part is connected to the lower layers of the original first channel, the third part is connected to the upper layers of the original second channel in the channel group, and the fourth part is connected to the original second channel The following layers are connected.
此后进入步骤 505 ,在该指定金属层中,将第一部分与第四部分以金属线连接,将第二部分与第三部分以金属线连接。此后结束本流程。 Then proceed to step 505 In the specified metal layer, the first portion and the fourth portion are connected by a metal wire, and the second portion and the third portion are connected by a metal wire. This process ends thereafter.
在步骤 506 中,如果可供修改的指定金属层是第一个金属层,则将原先接低电平的通道改为接高电平,将原先接高电平的通道改为接低电平。 At step 506 If the specified metal layer that can be modified is the first metal layer, the channel that was originally connected to the low level is changed to the high level, and the channel that was originally connected to the high level is changed to the low level.
除了图 5 中所示的方法之外,也可以不论可供修改的指定金属层是哪一层,都采用类似步骤 503 和 504 中方法处理,即,先切断指定金属层中的两段金属线,再将切换后形成的四个部分交叉连接。换句话说,省略步骤 502 、 503 和 506 。 In addition to the method shown in Figure 5, a similar step 503 can be used regardless of which layer of the specified metal layer is available for modification. The method is processed in 504, that is, the two metal wires in the specified metal layer are cut off, and the four portions formed after the switching are cross-connected. In other words, steps 502, 503, and 506 are omitted.
下面以图 4 中的芯片为例,对上述修改芯片版本号的方法进行具体说明。 The following takes the chip in FIG. 4 as an example to specifically describe the method for modifying the chip version number.
假定需要在 metal2 层进行修改,而需要修改的版本号比特对应通道 1 和通道 2 。 It is assumed that modifications are required at the metal2 layer, and the version number bits that need to be modified correspond to channel 1 and channel 2.
如图 6 所示,将 metal2 中的两段金属线切断,再将切断后形成的四个部分交叉连接即可。图中×表示在该处将连线断开,曲线表示将相应结点重新连接。 As shown in Figure 6, the metal2 The two metal wires in the middle are cut, and the four portions formed after the cutting are cross-connected. In the figure, × indicates that the line is disconnected, and the curve indicates that the corresponding node is reconnected.
需要说明的是,图 6 中的两条曲线是在 metal2 中实现的两条金属线,并没有从相邻的 via2 和 via1 中穿过。图 6 中为了清楚地表示连接关系,将曲线的一部分画在了 via2 和 via1 中,并不是非常准确,这里予以澄清。同样地,图 7 中有四条曲线,其中两条曲线是在 metal2 中实现的两条金属线,另两条曲线是在 metal4 中实现的两条金属线,并没有从相邻的通孔层中穿过。 It should be noted that the two curves in Figure 6 are two metal lines implemented in metal2, and there is no adjacent via2. And through via1. In Figure 6, in order to clearly show the connection relationship, it is not very accurate to draw a part of the curve in via2 and via1, which is clarified here. Similarly, Figure 7 There are four curves in it, two of which are the two metal lines implemented in metal2, and the other two are the two metal wires implemented in metal4 and do not pass through the adjacent via layers.
如果在图 6 的基础上需要再次改版,而版本号的这个比特又一次要改变,并且,假定这次只能在 metal4 中修改,则可以按图 7 中所示的方式进行修改,将 metal4 中的两段金属线切断,再将切断后形成的四个部分交叉连接即可。当然,也可以使用步骤 503 中的方法,如果原来引出的是通道 1 ,这次改将通道 2 引出即可。 If it needs to be revised again on the basis of Figure 6, the bit of the version number will change again, and it is assumed that this time can only be If it is modified in metal4, it can be modified in the way shown in Figure 7, the two wires in metal4 are cut, and the four parts formed after cutting are cross-connected. Of course, you can also use the steps In the method of 503, if channel 1 is originally drawn, this time, channel 2 can be extracted.
为了使说明清楚而减少不必要的重复,本发明中各实施方式中举例时都是以 4 个金属层的芯片为例进行说明的,但容易看出,本发明的技术方案完全可以应用在 2 个或 2 个以上金属层的芯片,而不需要任何创造性的劳动。 In order to clarify the description and reduce unnecessary repetition, the embodiments in the present invention are exemplified by 4 The chips of the metal layers are described as an example, but it is easy to see that the technical solution of the present invention can be applied to chips of two or more metal layers without any creative labor.
本发明第二实施方式涉及一种具有版本号的芯片,和一种修改芯片版本号的方法。 A second embodiment of the present invention relates to a chip having a version number, and a method of modifying a chip version number.
第二实施方式在第一实施方式的基础上进行了改进,主要改进之处在于:在每组通道设置一个或多个交叉结构,从而可以只修改一个通孔层而实现芯片版本号的修改,特别适用于在 ECO 修改时,只有通孔层需要修改的情况。具体地说: The second embodiment is improved on the basis of the first embodiment, and the main improvement is that one or more cross structures are arranged in each group of channels, so that only one through hole layer can be modified to realize the modification of the chip version number. Especially suitable for When the ECO is modified, only the via layer needs to be modified. Specifically:
每组通道中至少存在一个交叉结构。 There is at least one cross structure in each set of channels.
每个交叉结构包括以一个通孔层为中心的八个节点,其中, Each cross structure includes eight nodes centered on one via layer, wherein
第一至第四节点位于该通孔层一面相邻的金属层,第五至第八节点位于该通孔层另一面相邻的金属层。 The first to fourth nodes are located on one side of the metal layer adjacent to the via layer, and the fifth to eighth nodes are located on the other metal layer adjacent to the other side of the via layer.
第一与第二节点间以金属线相连,第三与第四节点间以金属线相连,第五与第六节点间以金属线相连,第七与第八节点间以金属线相连。 The first and second nodes are connected by metal wires, the third and fourth nodes are connected by metal wires, the fifth and sixth nodes are connected by metal wires, and the seventh and eighth nodes are connected by metal wires.
第一与第五节点位置对应,第二与第八节点位置对应,第三与第七节点位置对应,第四与第六节点位置对应。 Corresponding to the first and fifth node positions, the second and eighth node positions, the third and seventh node positions, and the fourth and sixth node positions.
第一与第五节点间有一个通孔,第三与第七节点间有一个通孔。 There is a through hole between the first and fifth nodes, and a through hole between the third and seventh nodes.
在该交叉结构所在的那组通道中,第一、第五节点以及它们之间的通孔构成一个通道的一部分,第三、第七节点以及它们之间的通孔构成另一个通道的一部分。 In the set of channels in which the intersecting structure is located, the first and fifth nodes and the through holes therebetween form part of one channel, and the third and seventh nodes and the through holes therebetween form part of the other channel.
下面说明对第二实施方式中所描述的芯片进行版本号修改的方法,其流程图如图 8 所示。 A method of modifying the version number of the chip described in the second embodiment will be described below, and a flowchart thereof is shown in FIG.
在步骤 801 中,确定要修改的比特所对应的一组通道。 In step 801, a set of channels corresponding to the bits to be modified are determined.
此后进入步骤 802 ,对于该组通道,在可供修改的指定通孔层中,断开原第一与第五节点之间的通孔。 Then proceed to step 802 For the set of channels, the through holes between the original first and fifth nodes are disconnected in the specified via layer that can be modified.
此后进入步骤 803 ,断开第三与第七节点间的通孔。 Thereafter, the process proceeds to step 803, where the through holes between the third and seventh nodes are disconnected.
此后进入步骤 804 ,在第二与第八节点间设置新通孔。 Thereafter, proceeding to step 804, a new via hole is provided between the second and eighth nodes.
此后进入步骤 805 ,在第四与第六节点间设置新通孔。 Thereafter, proceeding to step 805, a new via hole is provided between the fourth and sixth nodes.
步骤 802 至步骤 805 四个步骤可以任意互换顺序。 Steps 802 to 805 The four steps can be interchanged in any order.
下面以 4 个金属层的芯片为例,对芯片结构进行具体说明。图 9 中示出了在通孔层 via1 设置了一个交叉结构后的芯片结构。 The chip structure is specifically described below by taking a chip of four metal layers as an example. Figure 9 shows the via layer via1 A chip structure with a cross structure is set.
图中的交叉结构中, B2 对应第一节点, C2 对应第二节点, B2' 对应第三节点, C2' 对应第四节点, B1 对应第五节点, C1 对应第六节点, B1' 对应第七节点, C1' 对应第八节点。 In the cross structure in the figure, B2 corresponds to the first node, C2 corresponds to the second node, and B2' corresponds to the third node, C2' Corresponding to the fourth node, B1 corresponds to the fifth node, C1 corresponds to the sixth node, B1' corresponds to the seventh node, and C1' corresponds to the eighth node.
图 9 是个示意图,各节点在对应关系上的信息没有完全表达出来。图 10 是图 9 中交叉结构的平面图,可以较好地表示各个节点的对应关系。 Figure 9 is a schematic diagram, and the information of each node in the corresponding relationship is not fully expressed. Figure 10 is Figure 9. The plan view of the middle cross structure can better represent the correspondence of each node.
从图 10 可以看出,在 via1 的法线方向, B1 与 B2 对应, B1' 与 B2' 对应, C1' 与 C2 对应, C1 与 C2' 对应。图中以 B1(B2) 表示 B1 和 B2 平面坐标相同, B1'(B2') 表示 B1' 和 B2' 平面坐标相同, C1(C2') 表示 C1 和 C2' 平面坐标相同, C1'(C2) 表示 C1' 和 C2 平面坐标相同。图中的小圆圈表示此处存在一个通孔,如 B1(B2) 和 B1'(B2') 两个位置。图中的×表示此处不存在实际的通孔,只在通孔层相邻的两个金属层预留了一个通孔的位置,如 C1(C2') 和 C1'(C2) 两个位置。 As can be seen from Figure 10, in the normal direction of via1, B1 corresponds to B2, and B1' corresponds to B2'. C1' corresponds to C2, and C1 corresponds to C2'. In the figure, B1(B2) means that B1 and B2 have the same plane coordinates, and B1'(B2') means B1' and B2'. The plane coordinates are the same, C1(C2') means C1 and C2' plane coordinates are the same, C1'(C2) means C1' and C2 The plane coordinates are the same. The small circle in the figure indicates that there is a through hole, such as B1(B2) and B1'(B2'). Two locations. The × in the figure indicates that there is no actual through hole, and only one through hole is reserved in the two metal layers adjacent to the via layer, such as C1 (C2') and C1' (C2). .
假定仅修改 via1 层,将原先 B1(B2) 和 B2(B2') 两个通孔废弃,而通过新的通孔将 C1 和 C2' 连通,将 C1' 和 C2 连通,则同样可以达到修改芯片版本号的目的。具体的修改可以参见图 11 ,图 11 中的两根曲线对应两个新的通孔。修改后的交叉结构在平面图中的状态如图 12 所示。 Assume that only the via1 layer is modified, the original B1 (B2) and B2 (B2') vias are discarded, and the new vias will be C1 and C2' are connected, and C1' and C2 are connected. The same can be achieved by modifying the chip version number. Specific modifications can be seen in Figure 11 and Figure 11 The two curves in the pair correspond to two new through holes. The state of the modified cross structure in the plan view is shown in Figure 12.
需要说明的是,图 11 中的两条曲线只是表示新的连接关系,并没有真的从 via2 中穿过,图中的画法仅仅是为了能更为清楚地表示连接关系。 It should be noted that the two curves in Figure 11 only represent the new connection relationship, and there is no real slave2. Passing through, the drawing is just to show the connection relationship more clearly.
本发明第三实施方式涉及一种具有版本号的芯片,和一种修改芯片版本号的方法。 A third embodiment of the present invention relates to a chip having a version number, and a method of modifying a chip version number.
第三实施方式在第二实施方式的基础上进行了改进,主要改进之处在于:为每一个通孔层都设置了一个交叉结构,从而只要修改任意一个通孔层,都可以实现芯片版本号的修改。 The third embodiment is improved on the basis of the second embodiment, and the main improvement is that a cross structure is provided for each of the via layers, so that the chip version number can be realized by modifying any one of the via layers. Modifications.
而第二实施方式中只在部分通孔层设置交叉结构,较为适合预先知道哪一些通孔层可能会被修改的情况。 In the second embodiment, only a part of the via layer is provided with a cross structure, which is suitable for knowing in advance which of the via layers may be modified.
第三实施方式中,每组通道中都存在 N-1 个交叉结构,每个交叉结构分别以一个不同的通孔层为中心。 In the third embodiment, N-1 exists in each group of channels. A cross structure, each of which is centered on a different via layer.
以 4 个金属层的芯片为例,可以采用图 13 的结构,其中不同层的走线用不同用的线型表示,详见图例。如果有通过修改某一特定通孔层修改芯片版本号的需求,则将该通孔层原有的两个通孔废弃,将原先没有连通的位置(在图上用×标识)用新的通孔打通即可。 Taking a chip with 4 metal layers as an example, Figure 13 can be used. The structure, in which the traces of different layers are represented by different line types, as shown in the figure. If there is a need to modify the chip version number by modifying a specific via layer, the original two via holes of the via layer are discarded, and the original unconnected position (marked with × on the figure) is used for the new pass. The hole can be opened.
本领域的技术人员可以知道,具体的 layout (版图)走线方式有很多种,即使对于 4 个金属层的芯片的情况也可以有很多的走线方式,在图 14 和图 15 中罗列了其中的两种。 Those skilled in the art will appreciate that there are many ways to route a particular layout, even for 4 The case of a metal layer chip can also have a lot of routing methods, two of which are listed in Figure 14 and Figure 15.
第三实施方式可以实现修改任一金属层或通孔层即可实现修改芯片版本号的目的,使修改更为灵活,且有效地节省了改版成本。 The third embodiment can realize the purpose of modifying the chip version number by modifying any metal layer or the via layer, making the modification more flexible and effectively saving the revision cost.
虽然通过参照本发明的某些优选实施方式,已经对本发明进行了图示和描述,但本领域的普通技术人员应该明白,可以在形式上和细节上对其作各种改变,而不偏离本发明的精神和范围。 Although the invention has been illustrated and described with reference to the preferred embodiments of the present invention, it will be understood The spirit and scope of the invention.
本发明的实施方式Embodiments of the invention
工业实用性Industrial applicability
序列表自由内容Sequence table free content

Claims (10)

1 .一种具有版本号的芯片,包括依次层叠的 N 个金属层,每两个相邻金属层之间有一个通孔层,以及一个器件层,所述 N 个金属层依次为第一个金属层至第 N 个金属层, N 为大于 1 的整数,所述器件层与第一个金属层相邻;其特征在于,该芯片中至少存在一组通道,每组通道具有以下特征:1 . A chip having a version number, comprising N metal layers stacked in sequence, a via layer between each two adjacent metal layers, and a device layer, said N The metal layers are in order from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; wherein the chip has at least one set of channels, each set of channels having the following characteristics:
每组通道包括两个相互不连通的独立通道;Each group of channels includes two independent channels that are not connected to each other;
每个通道分别从第一个金属层开始,贯穿各金属层和通孔层,一直连通到第 N 个金属层;每个通道在每个金属层表现为一段金属线,在每个通孔层表现为一个通孔;Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
一个通道通过第一个金属层与器件层的低电平连接,另一个通道通过第一个金属层与器件层的高电平连接;One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer;
在第 N 个金属层中,两个通道中的一个被引出作为版本号的一个比特。 In the Nth metal layer, one of the two channels is taken out as a bit of the version number.
2 .根据权利要求 1 所述的具有版本号的芯片,其特征在于,所述每组通道中至少存在一个交叉结构;2 . The chip with a version number according to claim 1, wherein at least one cross structure exists in each group of channels;
每个所述交叉结构包括以一个通孔层为中心的八个节点,其中,Each of the intersecting structures includes eight nodes centered on one via layer, wherein
第一至第四节点位于该通孔层一面相邻的金属层,第五至第八节点位于该通孔层另一面相邻的金属层;The first to fourth nodes are located on one side of the metal layer adjacent to the via layer, and the fifth to eighth nodes are located on the other metal layer adjacent to the other side of the via layer;
第一与第二节点间以金属线相连,第三与第四节点间以金属线相连,第五与第六节点间以金属线相连,第七与第八节点间以金属线相连;The first and second nodes are connected by metal wires, the third and fourth nodes are connected by metal wires, the fifth and sixth nodes are connected by metal wires, and the seventh and eighth nodes are connected by metal wires;
第一与第五节点位置对应,第二与第八节点位置对应,第三与第七节点位置对应,第四与第六节点位置对应;Corresponding to the first and fifth node positions, the second and eighth node positions, the third and seventh node positions, and the fourth and sixth node positions;
第一与第五节点间有一个通孔,第三与第七节点间有一个通孔;There is a through hole between the first node and the fifth node, and a through hole between the third node and the seventh node;
在该交叉结构所在的那组通道中,第一、第五节点以及它们之间的通孔构成一个通道的一部分,第三、第七节点以及它们之间的通孔构成另一个通道的一部分。In the set of channels in which the intersecting structure is located, the first and fifth nodes and the through holes therebetween form part of one channel, and the third and seventh nodes and the through holes therebetween form part of the other channel.
3 .根据权利要求 2 所述的具有版本号的芯片,其特征在于,所述每组通道中存在 N-1 个交叉结构,每个交叉结构分别以一个不同的通孔层为中心。3 . The chip with a version number according to claim 2, wherein N-1 exists in each group of channels A cross structure, each of which is centered on a different via layer.
4 .根据权利要求 1 至 3 中任一项所述的具有版本号的芯片,其特征在于,该芯片中存在 M 组通道,每组通道分别对应所述版本号的一个比特,其中 M 为所述版本号的比特数。4 . A chip having a version number according to any one of claims 1 to 3, characterized in that M is present in the chip A group channel, each group channel corresponding to one bit of the version number, where M is the number of bits of the version number.
5 .根据权利要求 4 所述的具有版本号的芯片,其特征在于,一个通道通过第一个金属层与器件层中提供稳定低电平的单元 TieLO 连接,另一个通道通过第一个金属层与器件层中提供稳定高电平的单元 TieHI 连接。5 . The chip with a version number according to claim 4, wherein one channel passes through the first metal layer and the device layer provides a stable low level unit. The TieLO connection, the other channel is connected to the TieHI unit that provides a stable high level in the device layer through the first metal layer.
6 .根据权利要求 4 所述的具有版本号的芯片,其特征在于,所述每组通道中,将未被引出作为版本号的一个通道引出,作为版本号中相应比特取反后的信号。6 . According to claim 4 The chip with a version number is characterized in that, in each of the groups of channels, a channel that is not drawn as a version number is taken out as a signal after the corresponding bit in the version number is inverted.
7 .一种修改芯片版本号的方法,其特征在于,该芯片包括依次层叠的 N 个金属层,每两个相邻金属层之间有一个通孔层,以及一个器件层,所述 N 个金属层依次为第一个金属层至第 N 个金属层, N 为大于 1 的整数,所述器件层与第一个金属层相邻;该芯片中至少存在一组通道,每组通道具有以下特征:7 . A method of modifying a chip version number, characterized in that the chip comprises N stacked in sequence a metal layer, a via layer between each two adjacent metal layers, and a device layer, wherein the N metal layers are sequentially from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; at least one set of channels in the chip, each set of channels having the following characteristics:
每组通道包括两个相互不连通的独立通道;Each group of channels includes two independent channels that are not connected to each other;
每个通道分别从第一个金属层开始,贯穿各金属层和通孔层,一直连通到第 N 个金属层;每个通道在每个金属层表现为一段金属线,在每个通孔层表现为一个通孔;Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
一个通道通过第一个金属层与器件层的低电平连接,另一个通道通过第一个金属层与器件层的高电平连接;One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer;
在第 N 个金属层中,两个通道中的一个被引出作为版本号的一个比特;In the Nth metal layer, one of the two channels is taken out as a bit of the version number;
所述方法包括以下步骤:The method includes the following steps:
确定要修改的比特所对应的一组通道;Determining a set of channels corresponding to the bits to be modified;
对于该组通道,如果可供修改的指定金属层既不是最上面的第 N 个金属层,也不是最下面的第一个金属层,则切断该指定金属层中两个通道所对应的两段金属线,形成四个部分,第一部分与该通道组中原先第一个通道的上面各层连接,第二部分与原先第一个通道的下面各层连接,第三部分与该通道组中原先第二个通道的上面各层连接,第四部分与原先第二个通道的下面各层连接;For this set of channels, if the specified metal layer that can be modified is neither the top N a metal layer, which is not the first metal layer at the bottom, cuts two metal wires corresponding to two channels in the specified metal layer to form four portions, the first portion and the first channel in the channel group The upper layers are connected, the second part is connected to the lower layers of the original first channel, the third part is connected to the upper layers of the original second channel in the channel group, and the fourth part is connected to the original second channel The following layers are connected;
在该指定金属层中,将所述第一部分与所述第四部分以金属线连接,将所述第二部分与所述第三部分以金属线连接。In the specified metal layer, the first portion and the fourth portion are connected by a metal wire, and the second portion and the third portion are connected by a metal wire.
8 .根据权利要求 7 所述的修改芯片版本号的方法,其特征在于,所述确定要修改的比特所对应的一组通道的步骤之后,还包括以下步骤:8 . According to claim 7 The method for modifying a chip version number is characterized in that, after the step of determining a group of channels corresponding to the bit to be modified, the method further includes the following steps:
如果可供修改的指定金属层是第 N 个金属层,则确定该组通道中原先被引出作为版本号的那个通道,在第 N 个金属层中切断该通道的引出,改将该组通道中另一个通道引出作为版本号的一个比特。If the specified metal layer that can be modified is the Nth metal layer, then the channel in the group of channels that was originally extracted as the version number is determined at the Nth In the metal layer, the lead of the channel is cut off, and another channel in the set of channels is taken out as a bit of the version number.
9 .根据权利要求 8 所述的修改芯片版本号的方法,其特征在于,所述确定要修改的比特所对应的一组通道的步骤之后,还包括以下步骤:9 . According to claim 8 The method for modifying a chip version number is characterized in that, after the step of determining a group of channels corresponding to the bit to be modified, the method further includes the following steps:
如果可供修改的指定金属层是第一个金属层,则将原先与器件层中低电平连接的通道改为与器件层中的高电平连接,将原先与器件层中高电平连接的通道改为与器件层中的低电平连接。If the specified metal layer that can be modified is the first metal layer, the channel that was originally connected to the low level in the device layer is changed to the high level in the device layer, and is connected to the high level in the device layer. The channel is changed to a low level connection in the device layer.
10 .一种修改芯片版本号的方法,其特征在于,该芯片包括依次层叠的 N 个金属层,每两个相邻金属层之间有一个通孔层,以及一个器件层,所述 N 个金属层依次为第一个金属层至第 N 个金属层, N 为大于 1 的整数,所述器件层与第一个金属层相邻;该芯片中至少存在一组通道,每组通道具有以下特征:10 . A method of modifying a chip version number, characterized in that the chip comprises N stacked in sequence a metal layer, a via layer between each two adjacent metal layers, and a device layer, wherein the N metal layers are sequentially from the first metal layer to the Nth metal layer, and N is greater than 1 An integer of the device layer adjacent to the first metal layer; at least one set of channels in the chip, each set of channels having the following characteristics:
每组通道包括两个相互不连通的独立通道;Each group of channels includes two independent channels that are not connected to each other;
每个通道分别从第一个金属层开始,贯穿各金属层和通孔层,一直连通到第 N 个金属层;每个通道在每个金属层表现为一段金属线,在每个通孔层表现为一个通孔;Each channel starts from the first metal layer, runs through each metal layer and the via layer, and is connected to the Nth a metal layer; each channel behaves as a metal line in each metal layer, and represents a through hole in each of the via layers;
一个通道通过第一个金属层与器件层的低电平连接,另一个通道通过第一个金属层与器件层的高电平连接;One channel is connected to the low level of the device layer through the first metal layer, and the other channel is connected to the high level of the device layer through the first metal layer;
在第 N 个金属层中,两个通道中的一个被引出作为版本号的一个比特;In the Nth metal layer, one of the two channels is taken out as a bit of the version number;
所述每组通道中至少存在一个交叉结构;There is at least one cross structure in each set of channels;
每个所述交叉结构包括以一个通孔层为中心的八个节点,其中,Each of the intersecting structures includes eight nodes centered on one via layer, wherein
第一至第四节点位于该通孔层上面相邻的金属层,第五至第八节点位于该通孔层下面相邻的金属层;The first to fourth nodes are located adjacent to the metal layer above the via layer, and the fifth to eighth nodes are located adjacent to the metal layer below the via layer;
第一与第二节点间以金属线相连,第三与第四节点间以金属线相连,第五与第六节点间以金属线相连,第七与第八节点间以金属线相连;The first and second nodes are connected by metal wires, the third and fourth nodes are connected by metal wires, the fifth and sixth nodes are connected by metal wires, and the seventh and eighth nodes are connected by metal wires;
第一与第五节点位置对应,第二与第八节点位置对应,第三与第七节点位置对应,第四与第六节点位置对应;Corresponding to the first and fifth node positions, the second and eighth node positions, the third and seventh node positions, and the fourth and sixth node positions;
第一与第五节点间有一个通孔,第三与第七节点间有一个通孔;There is a through hole between the first node and the fifth node, and a through hole between the third node and the seventh node;
在该交叉结构所在的那组通道中,第一、第五节点以及它们之间的通孔构成一个通道的一部分,第三、第七节点以及它们之间的通孔构成另一个通道的一部分;In the set of channels in which the intersecting structure is located, the first and fifth nodes and the through holes therebetween form part of one channel, and the third and seventh nodes and the through holes therebetween form part of the other channel;
所述方法包括以下步骤:The method includes the following steps:
确定要修改的比特所对应的一组通道;Determining a set of channels corresponding to the bits to be modified;
对于该组通道,在可供修改的指定通孔层中,断开原第一与第五节点之间的通孔,断开第三与第七节点间的通孔,在第二与第八节点间设置新通孔,在第四与第六节点间设置新通孔。For the set of channels, in the specified through hole layer that can be modified, the through hole between the original first and fifth nodes is disconnected, and the through hole between the third and seventh nodes is disconnected, in the second and eighth A new through hole is set between the nodes, and a new through hole is set between the fourth and sixth nodes.
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