WO2011072597A1 - Procédé et système d'échange à double étage de galette en silicium pour appareil lithographique - Google Patents

Procédé et système d'échange à double étage de galette en silicium pour appareil lithographique Download PDF

Info

Publication number
WO2011072597A1
WO2011072597A1 PCT/CN2010/079759 CN2010079759W WO2011072597A1 WO 2011072597 A1 WO2011072597 A1 WO 2011072597A1 CN 2010079759 W CN2010079759 W CN 2010079759W WO 2011072597 A1 WO2011072597 A1 WO 2011072597A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer stage
driving unit
degree
drive unit
freedom
Prior art date
Application number
PCT/CN2010/079759
Other languages
English (en)
Chinese (zh)
Inventor
朱煜
张鸣
徐登峰
汪劲松
董立立
杨开明
尹文生
胡金春
许岩
马竞
田丽
李玉洁
王婧
Original Assignee
清华大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 清华大学 filed Critical 清华大学
Publication of WO2011072597A1 publication Critical patent/WO2011072597A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving

Definitions

  • the invention relates to an efficient lithography machine dual silicon wafer exchange system, which is applied to a semiconductor lithography machine and belongs to the technical field of semiconductor manufacturing equipment.
  • the exposure design (lithography) of the chip design pattern on the photoresist on the surface of the silicon wafer is one of the most important processes.
  • the device used in this process is called a photolithography machine. machine).
  • the resolution and exposure efficiency of the lithography machine greatly affect the feature line width (resolution) and productivity of the integrated circuit chip.
  • the motion precision and working efficiency of the silicon ultra-precision motion positioning system (hereinafter referred to as the silicon wafer system), which is the key system of the lithography machine, largely determine the resolution and exposure efficiency of the lithography machine.
  • the basic principle of the step-and-scan projection lithography machine is shown in Figure 1.
  • the deep ultraviolet light from the light source 26 passes through a reticle 27 and a lens system 28 to image a portion of the pattern on the reticle on a particular chip of the silicon wafer 29.
  • the reticle and the silicon wafer are reversely moved at a certain speed ratio, and finally all the patterns on the reticle are imaged on the chip of the silicon wafer.
  • the basic function of the wafer stage motion positioning system is to carry the silicon wafer during the exposure process and move at a set speed and direction to achieve accurate transfer of the mask pattern to various areas of the wafer. Since the line width of the chip is very small (the minimum line width has reached 45 nm at present), in order to ensure the engraving precision and resolution of the lithography, the wafer stage must have a very high motion positioning accuracy; in addition, the movement of the wafer stage Speed greatly affects the productivity of lithography, so it is necessary to continuously increase the speed of the wafer stage to increase productivity.
  • the invention patent filed by the applicant in 2007 "a lithography machine wafer table double exchange system” (publication number: CN101101454 A dual-switching system of a lithography machine is disclosed, which has the advantages of simple structure, high space utilization, and the exposure efficiency of the lithography machine.
  • the double-wafer stage system also has some problems.
  • the air-floating bearing needs to exchange the guiding surface when the wafer stage is exchanged, which leads to extremely high precision requirements for the dimensional consistency of the wafer stage, and the processing and assembly of the parts.
  • the invention aims at the shortcomings and defects of the prior art silicon wafer stage technology, and proposes a new high efficiency with the advantages of simple structure, high exchange efficiency, high space utilization and no collision between linear guide rails during exchange.
  • the lithography machine's dual silicon wafer exchange system can overcome the shortcomings of the existing dual silicon wafer exchange system, such as non-centroid drive, high space utilization, and high processing and assembly precision requirements, making it simple in structure and space utilization.
  • the rate is high and there is no advantage that the linear guides collide with each other during the exchange, thereby further improving the exchange efficiency and exposure efficiency of the lithography machine.
  • the invention provides a method for exchanging a dual wafer stage of a lithography machine, characterized in that the exchange method is carried out as follows: a) when the two wafer stages exchange positions, firstly, the first main driving unit drives the first Y direction guide And the first wafer stage rotates clockwise in the plane of the base, and the second main driving unit drives the second Y-direction guide and the second wafer stage to rotate clockwise in the plane of the base, and The first wafer stage auxiliary driving unit drives the first wafer stage to move along the first Y-direction rail toward the first main driving unit, and the second wafer stage auxiliary driving unit drives the second wafer stage to face along the second Y-direction rail.
  • the second main driving unit moves in the direction; b) when the two Y-direction guides rotate to move in the X direction without mutual interference, the first main driving unit drives the first Y-direction guide rail and the first silicon wafer stage to move in the negative X direction. At the same time, the second main driving unit drives the second Y-direction guide rail and the second silicon wafer stage to move in the positive X direction, and the first single-degree-of-freedom auxiliary driving unit moves in the X negative direction, and the third single-degree-of-freedom auxiliary driving unit moves along the X direction.
  • the invention provides a lithography machine dual silicon wafer exchange system, which comprises a first wafer stage running at an exposure station, a second wafer stage running at a pretreatment station, a base station, a first X Direction linear guide, second X direction linear guide, first single degree of freedom auxiliary drive unit, second single degree of freedom auxiliary drive unit, third single degree of freedom auxiliary drive unit, fourth single degree of freedom auxiliary drive unit, first Y a direction guide rail, a second Y-direction guide rail, a first wafer stage auxiliary driving unit, and a second wafer stage auxiliary driving unit, the first Y-direction rail passes through the first wafer stage, and the second Y-direction rail passes through the second silicon a stage; the system further comprising: a first main driving unit disposed on the first X-direction linear guide; and a second main driving unit disposed on the second X-direction linear guide; the first main The driving unit and the second main driving unit have a degree of freedom of movement in the X direction and
  • a lithography machine dual silicon wafer exchange system is characterized in that: the first main driving unit and the second main driving unit are driven by a main driving unit linear motor mover, a torque motor and a vacuum preload
  • the air bearing is composed of a stepping motor, or the linear motor is replaced by a stepping motor, and the vacuum preloaded air bearing is replaced by a permanent magnet preloaded air floating shaft.
  • a ball guide or an air bearing is mounted between the top of the first main drive unit and the first X-direction guide rail, and between the top of the second main drive unit and the second X-direction guide rail as a guide support;
  • the bottom surface of the first main driving unit and the second main driving unit in contact with the base is equipped with a permanent magnet preloaded air bearing.
  • a lithography machine dual silicon wafer exchange system is characterized in that: the first main driving unit, the second main driving unit, the first single degree of freedom auxiliary driving unit, and the second single
  • the linearity motor of the degree of freedom auxiliary drive unit, the third single degree of freedom auxiliary drive unit, the fourth single degree of freedom auxiliary drive unit, the first wafer stage auxiliary drive unit, and the second wafer stage auxiliary drive unit are respectively mounted for position Feedback linear grating.
  • the first single degree of freedom auxiliary driving unit, the second single degree of freedom auxiliary driving unit, the third single degree of freedom auxiliary driving unit and the fourth single degree of freedom auxiliary driving unit of the present invention are all equipped with linear motor movers at the bottom.
  • the side contacting the abutment is equipped with a vacuum preloaded air bearing, and the bottom surface in contact with the abutment is equipped with a permanent magnet preloaded air bearing.
  • a lithography machine dual silicon wafer exchange system further comprises a dual frequency laser interferometer for moving position feedback of the silicon wafer stage.
  • the invention has the following outstanding advantages: one is that the silicon wafer stage of the system is driven by the centroid; the other is that the four auxiliary driving units are single degrees of freedom, which simplifies the control system structure and reduces the system zero.
  • Figure 1 is a schematic diagram of the working principle of the lithography machine.
  • FIG. 2 is a state diagram of a wafer stage dual stage exchange system of a lithography machine of the present invention and before exchange.
  • Figure 3 shows the structure of the drive unit on both sides of the wafer stage.
  • Figure 4 shows the structure of the wafer stage and the Y-direction guide.
  • Figure 5 shows the connection between the wafer stage, the Y-direction guide and the single-degree-of-freedom auxiliary drive unit.
  • Figure 6 shows the structure of a two degree of freedom main drive unit.
  • Figure 7 shows the structure of a single degree of freedom auxiliary drive unit.
  • Figure 8 shows the exchange process for two wafer stages.
  • 1 - first single degree of freedom auxiliary drive unit 2 - first X direction guide; 3 - first wafer stage; 4 - first Y direction guide; 5 - base; 6 - second X direction guide ; 7 - second single degree of freedom auxiliary drive unit; 8 - second wafer stage; 9 - second Y direction guide; 10 - first main drive unit; 11 - first wafer stage auxiliary drive unit; Two-silicon wafer auxiliary driving unit; 13-second main driving unit; 14-torque motor; 15-third single-degree-of-freedom auxiliary driving unit; 16-fourth single-degree-of-freedom auxiliary driving unit; 17-single-degree-of-freedom driving unit Linear motor mover; 18—main drive unit linear motor mover; 19-vacuum preloaded air bearing; 20—permanent magnet preloaded air bearing; 21—Y direction guide linear motor stator magnet; 22—silicon wafer stage Bottom air bearing; 23-Y direction guide air bearing; 24 - closed preloaded air bearing
  • FIG. 2 is a schematic structural view of a dual silicon wafer exchange system of a lithography machine according to the present invention, the system includes a first wafer stage 3 running at an exposure station, and a second wafer stage 8 running at a pretreatment station, a first X-direction linear guide 2, a second X-direction linear guide 6, a first single-degree-of-freedom auxiliary drive unit 1, a second single-degree-of-freedom auxiliary drive unit 7, a third single-degree-of-freedom auxiliary drive unit 15, and a fourth single free
  • the auxiliary driving unit 16 the first Y-direction guide rail 4, the second Y-direction guide rail 9, the first wafer stage auxiliary driving unit 11, the second wafer stage auxiliary driving unit 12, the first main driving unit 10, and the second main
  • the driving unit 13 and the base 5 the long side of the base is the X direction, and the short side is the Y direction; the first main driving unit 10 and the second main driving unit 13 have the freedom of movement in the X direction and are
  • the first main driving unit 10, the third single degree of freedom auxiliary driving unit 15 and the fourth single degree of freedom auxiliary driving unit 16 share the first Y direction linear guide 4;
  • the second main driving unit 13, the first single degree of freedom auxiliary driving unit 1 and the second single-degree-of-freedom auxiliary driving unit 7 share the second Y-direction linear guide 9;
  • the first Y-direction guide 4 passes through the first wafer stage 3, one end of the first Y-direction guide 9 and the first main driving unit 10 Coupling, the other end is coupled with the third single-degree-of-freedom auxiliary driving unit 15 , and the first driving unit 10 and the third single-degree-of-freedom auxiliary driving unit 15 are driven together to realize the movement of the first wafer stage in the X direction;
  • the first Y-direction guide rail 4 can realize a rotary motion perpendicular to the plane of the base plate under the driving of the first main drive unit 10;
  • the second Y-direction guide rail 9 passes through the second wafer stage 8, and
  • FIG. 3 and 4 show the structure and connection mode of the wafer stage, the X-direction guide rail, the Y-direction guide rail, the air bearing, the single-degree-of-freedom auxiliary drive unit, the main drive unit, and the first single-degree-of-freedom auxiliary drive unit 1,
  • the bottoms of the two single-degree-of-freedom auxiliary driving unit 7, the third single-degree-of-freedom auxiliary driving unit 15, and the fourth single-degree-of-freedom auxiliary driving unit 16 are all equipped with a linear motor mover, and the bottom surface in contact with the base is equipped with a permanent magnet pre-prepared a carrier air bearing or a vacuum preload air bearing, the stator is mounted on the base 5, and the third single degree of freedom auxiliary driving unit or the fourth single degree of freedom auxiliary driving unit is docked with the first Y direction rail 4, and
  • a main driving unit 10 cooperates to jointly drive the first silicon wafer table to move in the X direction; the coupling manner of the X direction guide rail and the main
  • Figure 4 shows the coupling structure of the wafer stage and the Y-direction guide.
  • the bottom of the first wafer stage 3 is provided with a vacuum preloaded air bearing, the upper surface of the base is a guiding surface, the first Y direction rail 4 penetrates from the inside of the first wafer stage 3, and the first Y direction rail 4 is mounted with Y.
  • the directional guide linear motor stator magnet, the coil is mounted as a linear motor mover on the wafer stage; the two inner vertical faces of the first wafer stage 3 are also equipped with a closed preload air bearing to constrain the first wafer stage 3 Move along the guide rail in the Y direction.
  • Figure 5 shows the coupling between the first Y-direction rail 4 and the single-degree-of-freedom auxiliary drive unit 15.
  • the third single-degree-of-freedom auxiliary driving unit 15 is docked with the first Y-direction guide rail 4, and the joint surface can be accurately docked and detached by electromagnetic or vacuum adsorption to achieve position exchange of the wafer stage.
  • FIG. 6 shows the structure of the first main drive unit.
  • the first main driving unit 10 is equipped with a linear motor mover 18 and a torque motor 14, which has two degrees of freedom of translation and rotation, and is driven by a torque motor, a linear motor or a stepping motor, and can realize translation in the X direction.
  • the bottoms of the first main driving unit 10 and the second main driving unit 13 are respectively equipped with linear motor movers 18, and the bottom surface is equipped with a permanent magnet preloaded air bearing 20;
  • a ball guide or an air bearing is used as a guide support between the Y-direction guide rail and the Y-direction guide rail.
  • Figure 7 shows the structure of a single degree of freedom auxiliary drive unit.
  • the single-degree-of-freedom auxiliary drive unit and the main drive unit drive the wafer stage to move in the X direction.
  • the single-degree-of-freedom auxiliary drive unit is equipped with a linear motor mover 17 at the bottom, and a vacuum preloaded air bearing 19 is mounted on the side. Both are equipped with permanent magnet preloaded air bearing.
  • the system of the present invention also includes a dual frequency laser interferometer for feedback of the position of the wafer stage.
  • Figure 8 shows the exchange process of the dual silicon wafer exchange system of the lithography machine of the present invention, which is carried out as follows:
  • the first wafer stage 3 and the second wafer stage 8 are in a position state before the exchange, and the third single-degree-of-freedom auxiliary driving unit 15 is docked with the first Y-direction guide 4 and is driven together with the first main drive unit 10.
  • the first wafer stage 3 is in the exposure station; the first single degree of freedom auxiliary driving unit 1 is docked with the second Y direction rail 9 and drives the second wafer stage 8 together with the second main driving unit 13 in the pretreatment station.
  • the first Y-direction guide rail 4 is disengaged from the third single-degree-of-freedom auxiliary drive unit 15, and the first main drive unit 10 drives the first Y-direction guide rail 4 and drives the first wafer stage 3 to be compliant in the plane of the base station.
  • the first main drive unit 10 drives the first Y-direction guide rail 4 and the first wafer stage 3 to move in the negative X direction
  • the main driving unit 13 drives the second Y-direction guide 9 and the second wafer stage 8 to move in the positive X direction
  • the first single-degree-of-freedom auxiliary driving unit 1 moves in the X negative direction
  • the third single-degree-of-freedom auxiliary driving unit 15 X moves in the positive direction and moves to the edge to stop, as shown in Figure 7(b);

Abstract

L'invention concerne un système d'échange à double étage de galette en silicium pour un appareil lithographique comprenant un étage de base (5), deux étages de galette en silicium (3,8), deux rails de guidage linéaires dans la direction X (2, 6), deux rails de guidage linéaires dans la direction Y (4, 9), deux unités d'entraînement auxiliaires (11, 12) d'étage de galette en silicium et quatre unités d'entraînement auxiliaires (1, 7, 15, 16) à un degré de liberté. Le système comprend en outre deux unités d'entraînement principales (10, 13). En étant entraîné par les unités d'entraînement principales, les rails de guidage linéaires dans la direction Y peuvent accomplir le mouvement le long de la direction X et le mouvement rotatif dans le plan de l'étage de base. Les deux rails de guidage linéaires dans la direction Y tournent jusqu'à ce qu'ils n'interfèrent plus l'un avec l'autre lorsqu'ils se déplacent le long de la direction X, puis les deux rails de guidage linéaires dans la direction Y se déplacent alors l'un vers l'autre le long de la direction X conjointement avec les étages de galette en silicium. Lorsque les deux rails de guidage linéaires dans la direction Y changent pour se déplacer dans des directions opposées, les deux rails de guidage linéaires dans la direction Y tournent dans des directions opposées et réalisent ainsi l'échange de position des deux étages de galette. L'invention concerne également un procédé d'échange à deux étages de la galette en silicium pour l'appareil lithographique. Le système permet non seulement d'éviter les irrégularités de taille des plates-formes de galette en silicium et autorise des exigences de précision extrêmement élevées pour le traitement et l'assemblage de pièces, mais il raccourcit également le temps d'échange, simplifie la structure du système et améliore l'efficacité, le facteur d'utilisation de l'espace et la précision du système.
PCT/CN2010/079759 2009-12-15 2010-12-14 Procédé et système d'échange à double étage de galette en silicium pour appareil lithographique WO2011072597A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2009102419108A CN101718959B (zh) 2009-12-15 2009-12-15 一种光刻机硅片台双台交换方法及系统
CN200910241910.8 2009-12-15

Publications (1)

Publication Number Publication Date
WO2011072597A1 true WO2011072597A1 (fr) 2011-06-23

Family

ID=42433546

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/079759 WO2011072597A1 (fr) 2009-12-15 2010-12-14 Procédé et système d'échange à double étage de galette en silicium pour appareil lithographique

Country Status (2)

Country Link
CN (1) CN101718959B (fr)
WO (1) WO2011072597A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102495531A (zh) * 2011-11-12 2012-06-13 哈尔滨工业大学 一种基于自主同步调向的双工件台回转交换方法与装置
CN108705170A (zh) * 2018-05-31 2018-10-26 深圳市阿拉玎光电自动化有限公司 双炉胆焊接装置以及焊接设备

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101718959B (zh) * 2009-12-15 2011-05-11 清华大学 一种光刻机硅片台双台交换方法及系统
CN102681363B (zh) * 2012-05-11 2014-02-19 清华大学 一种多工位硅片台多台交换系统及其交换方法
EP3137854B1 (fr) * 2014-04-04 2018-10-17 NTN-SNR Roulements Procede de transmission d'informations depuis un equipage mobile le long d'une trajectoire fixe, dispositif de transmission et installation associes
CN109896277B (zh) * 2019-03-19 2023-12-26 江苏信息职业技术学院 真空分配模块、真空吸盘及测试分选机
CN110040512B (zh) * 2019-04-24 2021-01-26 全成信电子（深圳）股份有限公司 一种多工位pcb板的自动定位机构

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969441A (en) * 1996-12-24 1999-10-19 Asm Lithography Bv Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
US20020196421A1 (en) * 2001-06-21 2002-12-26 Nikon Corporation Stage device, exposure apparatus and method
JP2005038874A (ja) * 2003-07-15 2005-02-10 Nikon Corp ステージ装置及び露光装置
JP2005353969A (ja) * 2004-06-14 2005-12-22 Canon Inc 露光装置
CN101071275A (zh) * 2007-06-08 2007-11-14 上海微电子装备有限公司 一种旋转交换的双台系统
WO2007133011A1 (fr) * 2006-05-12 2007-11-22 Chungju National University Industry-Academic Cooperation Foundation Procédé et appareil pour détecter une position dans le plan dans une platine planaire par mesure du déplacement d'un entrefer
CN101551599A (zh) * 2009-04-03 2009-10-07 清华大学 一种光刻机硅片台双台交换系统
CN101718959A (zh) * 2009-12-15 2010-06-02 清华大学 一种光刻机硅片台双台交换方法及系统

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969441A (en) * 1996-12-24 1999-10-19 Asm Lithography Bv Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
US20020196421A1 (en) * 2001-06-21 2002-12-26 Nikon Corporation Stage device, exposure apparatus and method
JP2005038874A (ja) * 2003-07-15 2005-02-10 Nikon Corp ステージ装置及び露光装置
JP2005353969A (ja) * 2004-06-14 2005-12-22 Canon Inc 露光装置
WO2007133011A1 (fr) * 2006-05-12 2007-11-22 Chungju National University Industry-Academic Cooperation Foundation Procédé et appareil pour détecter une position dans le plan dans une platine planaire par mesure du déplacement d'un entrefer
CN101071275A (zh) * 2007-06-08 2007-11-14 上海微电子装备有限公司 一种旋转交换的双台系统
CN101551599A (zh) * 2009-04-03 2009-10-07 清华大学 一种光刻机硅片台双台交换系统
CN101718959A (zh) * 2009-12-15 2010-06-02 清华大学 一种光刻机硅片台双台交换方法及系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102495531A (zh) * 2011-11-12 2012-06-13 哈尔滨工业大学 一种基于自主同步调向的双工件台回转交换方法与装置
CN108705170A (zh) * 2018-05-31 2018-10-26 深圳市阿拉玎光电自动化有限公司 双炉胆焊接装置以及焊接设备

Also Published As

Publication number Publication date
CN101718959A (zh) 2010-06-02
CN101718959B (zh) 2011-05-11

Similar Documents

Publication Publication Date Title
WO2011072598A1 (fr) Système d'échange à double étage pour l'étage de galette en silicium d'une machine de lithographie et procédé d'échange de celle-ci
WO2010111973A1 (fr) Système d'échange de double support pour appareil lithographique
WO2011072597A1 (fr) Procédé et système d'échange à double étage de galette en silicium pour appareil lithographique
WO2010111969A1 (fr) Système d'échange à double étage pour appareil lithographique
WO2010111972A1 (fr) Système d'échange de double porte-plaquette pour dispositif lithographique
WO2009009947A1 (fr) Système de commutation à deux étages pour une machine lithographique
WO2012130108A1 (fr) Système de commutation de deux étages de plaquette pour une machine de lithographie
CN201364459Y (zh) 一种光刻机硅片台双台交换装置
US8027028B2 (en) Precise positioning system for dual stage switching exposure
CN1200321C (zh) 步进投影光刻机双台轮换曝光超精密定位硅片台系统
WO2021219028A1 (fr) Dispositif lithographique multifonctionnel
CN201364460Y (zh) 一种光刻机硅片台双台交换装置
CN113917796A (zh) 一种多自由度宏微混合的精密运动台
WO2011037276A1 (fr) Appareil d'exposition, et procédé de fabrication de dispositif
WO2013026361A1 (fr) Dispositif photolithographique à étapes et procédé d'exposition photolithographique
CN101201555A (zh) 一种采用传送带结构的光刻机硅片台双台交换系统
CN101241311B (zh) 具有掩模台功能的基于叠加电机的物料传输系统及其方法
CN101231471B (zh) 一种采用过渡承接装置的光刻机硅片台双台交换系统
CN100570496C (zh) 一种采用十字导轨的光刻机硅片台双台交换系统
CN201181388Y (zh) 采用传送带结构的光刻机硅片台双台交换装置
CN111198483B (zh) 光刻预对准装置及预对准方法、光刻设备
CN113835308A (zh) 一种拼接曝光方法、装置及系统
CN201181389Y (zh) 采用过渡承接装置的光刻机硅片台双台交换系统
CN201181387Y (zh) 采用十字导轨的光刻机硅片台双台交换装置
CN103376667B (zh) 一种用于曝光装置的掩模台

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10837034

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10837034

Country of ref document: EP

Kind code of ref document: A1