WO2011069881A1 - Source de lumière euv pour le système d'éclairage d'un dispositif d'exposition par projection microlithographique - Google Patents

Source de lumière euv pour le système d'éclairage d'un dispositif d'exposition par projection microlithographique Download PDF

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Publication number
WO2011069881A1
WO2011069881A1 PCT/EP2010/068699 EP2010068699W WO2011069881A1 WO 2011069881 A1 WO2011069881 A1 WO 2011069881A1 EP 2010068699 W EP2010068699 W EP 2010068699W WO 2011069881 A1 WO2011069881 A1 WO 2011069881A1
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WO
WIPO (PCT)
Prior art keywords
radiation
source unit
target material
mirror
light source
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Application number
PCT/EP2010/068699
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English (en)
Inventor
Damian Fiolka
Original Assignee
Carl Zeiss Smt Gmbh
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Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2011069881A1 publication Critical patent/WO2011069881A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Definitions

  • EUV light source for an illumination system of a microlithographic projection exposure apparatus
  • the invention concerns an EUV light source for an illumination system of a microlithographic projection exposure apparatus.
  • Microlithography is used for the production of microstructured components such as for example integrated circuits or LCDs.
  • the microlithography process is carried out in what is referred to as a projection exposure apparatus having an illumination system and a projection objective.
  • a projection exposure apparatus having an illumination system and a projection objective.
  • Mirrors are used as optical components for the imaging process in projection objectives designed for the EUV range, that is to say at wavelengths of for example about 13 nm or about 7 nm, due to the lack of availability of suitable translucent refractive materials.
  • Production of the EUV light is effected by means of an EUV light source based on plasma excitation, in relation to which Figure 3 shows a conventional structure by way of example.
  • That EUV light source firstly has a C0 2 laser (not shown in Figure 3) to produce infrared radiation 306 of a wavelength of ⁇ « 10.6 ⁇ which is focused by way of an optical focusing system (not shown in Figure 3), passes through an opening 31 1 in a collector mirror 310 in the form of an ellipsoid and is deflected on to a target material 332 (for example tin droplets) which are produced by means of a target source 335 and fed to a plasma ignition position 330.
  • a target material 332 for example tin droplets
  • the infrared radiation 306 heats the target material 332 in the plasma ignition position 330 in such a way that the material goes into a plasma state and produces EUV radiation.
  • the spectral range used by the microlithographic projection exposure apparatus can be for example ⁇ « 13.6 + 0.5 nm. That EUV radiation is focused by way of the collector mirror 310 on to an intermediate focus IF and passes through that intermediate focus IF into a subsequent illumination system, the boundary 340 of which is only indicated and which has a free opening 341 for the light entry.
  • a light trap 320 serves to prevent the infrared radiation 306 from passing through into the illumination system directly (that is to say without previous reflection occurring at the collector mirror 310).
  • the problem which arises in that respect is that the infrared radiation 306 incident on the target material 332 (in the example tin droplets) is partially reflected thereby. That reflection already occurs in the 'cold' state (that is to say before being converted into the plasma state), wherein the degree of reflection also increases in the conversion into the plasma state.
  • the proportion of the infrared radiation reflected by the target material 332 in the plasma ignition position 330 is referenced '307'.
  • a part of the infrared radiation incident on the target material 332 also penetrates into the target material 332.
  • the radiation emitted by the target material 332 is referenced '308' and, besides the infrared radiation and the desired EUV radiation, also includes further wavelengths, for example in the VUV range (about 100 nm).
  • the target material 332 reflects the infrared radiation 306 at its surface precisely in that direction in which the collector mirror 310 is arranged in the Figure 3 structure.
  • the collector mirror 310 also collects the infrared radiation reflected by the target material 332 at the plasma ignition position 330 (referenced '307' in Figure 3) and combines it together at the intermediate focus (IF), from which the infrared radiation also passes into the subsequent illumination system.
  • the infrared radiation is also deflected to the photoresist- coated wafer where the infrared radiation can lead to heating of the photoresist and thus to a disrupting background as far as destruction of the photoresist.
  • WO 2004/092693 A2 discloses inter alia an EUV light source in which, in an embodiment, in addition to an elliptical collector mirror, there is a secondary mirror which reflects light beams which are focused on to a target droplet disposed at the position intended for ignition of the plasma and which are emitted by the target droplet in a direction away from the elliptical collector mirror, back through the focus of the elliptical collector mirror on to the elliptical collector mirror from where those light beams are also deflected on to the intermediate focus (IF).
  • IF intermediate focus
  • the object of the present invention is to provide an EUV light source for an illumination system of a microlithographic projection exposure apparatus, which permits a reduction in the stressing of the illumination system with radiation of an unwanted wavelength.
  • An EUV light source according to the invention for an illumination system of a microlithographic projection exposure apparatus comprises:
  • At least one target source for feeding target material into the beam path of the radiation source unit in such a way that said target material can be excited at at least one plasma ignition position by radiation produced by the radiation source unit into a plasma state with the emission of EUV radiation
  • a primary mirror which forms a collector mirror and which at least partially reflects EUV radiation emitted by the target material in such a way that the reflected EUV radiation passes into the illumination system
  • a secondary mirror which reflects a beam produced by the radiation source unit and focuses it on to the plasma ignition position, - wherein the beam reflected at the secondary mirror after reflection at the secondary mirror has a numerical aperture greater than the numerical aperture of said beam prior to reflection at the secondary mirror, and
  • the wording expressing that radiation reflected at the target material in the plasma ignition position after focusing by the secondary mirror is "at least predominantly" not incident on the collector mirror is used to denote that the intensity of irradiation which, after focusing by the secondary mirror and reflection at the target material, is not incident on the (primary) collector mirror is larger than the intensity of irradiation which, after focusing by the secondary mirror and reflection at the target material, is incident on the collector mirror.
  • the intensity of irradiation which, after focusing by the secondary mirror and reflection at the target material, is incident on the collector mirror is not more than 30%, more particularly not more than 20%, still more particularly not more than 10%, and still more particularly not more than 5% of the total intensity of the irradiation reflected at the target material in the plasma ignition position after focusing by the secondary mirror.
  • the irradiation being reflected at the target material in the plasma ignition position after focusing by the secondary mirror is not incident at all on the collector mirror.
  • the invention is based in particular on the concept that the radiation produced by the radiation source unit and used for plasma excitation is firstly not - or at least not significantly - focused on the way to the plasma ignition position, but is guided at least predominantly past a target material in the plasma ignition position in the form of a substantially unfocused parallel beam, with the consequence that focusing on to the target material in the plasma ignition position occurs only after reflection at the further secondary mirror.
  • the secondary mirror used in accordance with the invention does not serve for example for the reflection of (secondary) radiation already emitted by a target material in the plasma ignition position, but rather for reflection of the primary radiation which was still not at all focused on to the plasma ignition position but which has passed the carrier material in the plasma ignition position without being influenced.
  • the radiation which is focused on to the plasma ignition position in that way after reflection at the secondary mirror consequently is incident on the target material in the plasma ignition position from another and in particular opposite direction in comparison with the conventional structure described in the opening part of this specification and is thus also reflected again in a different direction - insofar as it is not absorbed and converted into EUV radiation - , more specifically in such a way that at any event it can no longer be predominantly incident on the (primary) collector mirror and can pass focused thereby by way of the intermediate focus into the illumination system.
  • the principle according to the invention of focusing the infrared radiation produced by the radiation source unit only from a secondary mirror on to the target material in the plasma ignition position serves to heat up the target material in the plasma ignition position from a side which is in opposite relationship in comparison with the conventional arrangement in Figure 3. Consequently the beam path of any radiation still reflected at the target material in the plasma ignition position after focusing by the secondary mirror extends at least predominantly in such a way that the radiation reflected at the target material no longer is incident on the collector mirror and consequently cannot be collected at all by the collector mirror and fed into the illumination system.
  • the invention concerns an EUV light source for an illumination system of a microlithographic projection exposure apparatus comprising:
  • At least one target source for feeding target material into the beam path of the radiation source unit in such a way that said target material can be excited at at least one plasma ignition position by radiation produced by the radiation source unit into a plasma state with the emission of EUV radiation
  • a primary mirror which forms a collector mirror and which at least partially reflects EUV radiation emitted by the target material in such a way that the reflected EUV radiation passes into the illumination system
  • the collector mirror has an opening for the radiation produced by the radiation source unit to pass therethrough.
  • This opening can be a central opening on said collector mirror.
  • the opening can be located on a system axis of the EUV light source.
  • the invention however is not limited thereto, so that in other embodiments the collector mirror can also have one or more openings at other positions (not corresponding to a central position) for enabling radiation produced by the radiation source unit to pass therethrough.
  • the invention also relates to an EUV light source for an illumination system of a microlithographic projection exposure apparatus comprising:
  • At least one target source for feeding target material into the beam path of the radiation source unit in such a way that said target material can be excited at at least one plasma ignition position by radiation produced by the radiation source unit into a plasma state with the emission of EUV radiation
  • a primary mirror which forms a collector mirror and which at least partially reflects EUV radiation emitted by the target material in such a way that the reflected EUV radiation passes into the illumination system
  • the collector mirror has an opening for the radiation produced by the radiation source unit to pass therethrough.
  • the plasma ignition position, the secondary mirror and the intermediate focus are arranged on a common axis.
  • the opening is also arranged on said common axis.
  • the radiation produced by the radiation source unit has a propagation direction which is parallel to said common axis.
  • the radiation produced by the radiation source unit has, before reflection at the secondary mirror, a first average propagation direction, and the EUV radiation after reflection at the collector mirror has a second average propagation direction, wherein an angle between said first and second average propagation directions is less than 20°, more particular less than 10°, still more particularly less than 3°, and still more particularly 0°.
  • the term "average propagation direction” is used to denote the propagation direction averaged (as arithmetic average or arithmetic mean) over all rays or beams contributing to the respective radiation.
  • the secondary mirror is an ellipsoidal mirror.
  • the invention however is not restricted thereto but it is also possible to use another mirror depending on the respective specific arrangement.
  • the invention further makes use of the realisation that the radiation component emitted by the target material in the plasma state in the infrared range is comparatively slight in comparison with the component directly reflected by the plasma droplet in the infrared range.
  • the low proportion of the radiation emitted by the target material in the infrared range in comparison with the proportion in the infrared range that is reflected directly by the target material is based on the one hand on the limited conversion efficiency of the carrier material in the plasma state, which has the result that only a comparatively small radiation proportion is converted into plasma heat.
  • a further cause or attenuation of the emitted radiation portion results from spectral distribution: the target material in the plasma state represents so-to-speak a black body emitting a multiplicity of wavelengths of a wavelength spectrum which for example besides infrared radiation also embraces wavelengths in the VUV range (of about 100 nm) so that the total energy of the emitted radiation is correspondingly distributed to those wavelengths.
  • the proportion of infrared radiation which is particularly problematical in regard to adversely affecting the lithography process as explained in the opening part of this specification, in the radiation proportion emitted by the plasma drop (and thus in part also going to the collector) is substantially less than in the reflected radiation proportion (completely in the infrared range or at the wavelength of the light incident on the plasma droplet).
  • the illumination system also does not require any filter for the wavelength of the radiation serving for plasma excitation, whereby structural complication and expenditure and the costs of the illumination device can be reduced.
  • a filter should still be used for the wavelength serving for plasma excitation (that is to say in the foregoing example ⁇ « 10.6 ⁇ ) in order to filter out any residual radiation at that wavelength, which still passes from the target material to the collector mirror (for example as discussed hereinbefore as a consequence of emission of such radiation by the target material) in the illumination system, such a wavelength filter can at any event have a lower level of power density.
  • the invention also concerns an illumination system of a microlithographic projection exposure apparatus, wherein the illumination system is designed for operation with EUV radiation produced by excitation of target material to a plasma state with radiation produced by a radiation source unit, wherein the illumination system does not have a filter for the wavelength of the radiation produced by the radiation source unit.
  • the EUV radiation emitted by the target material is at least partially focused on to an intermediate focus by the collector mirror, wherein the secondary mirror is arranged geometrically between the plasma ignition position and the intermediate focus.
  • the radiation source unit has an infrared radiation source, in particular a C0 2 laser.
  • the target source is designed for feeding target material in droplet form, in particular for feeding tin droplets, into the beam path of the radiation source unit.
  • a target droplet of the target material is of a diameter in the ignition position which is less than 1 /100, in particular less than 1/120, further particularly less than 1/150, of the diameter of a beam which is incident directly on the plasma ignition position from the radiation source unit.
  • the secondary mirror has a cooling means in order in particular to effectively carry away heat dissipation produced by incident infrared radiation.
  • the collector mirror on its reflecting surface has an absorbent coating and/or a diffractive structure to reduce in particular radiation components in the VUV and DUV range which are also still emitted in the structure according to the invention by the target material which is in the plasma state and which by way of focusing at the collector mirror can pass to the intermediate focus and into the illumination system.
  • the absorbent coating or the diffractive structure can be designed in particular to absorb radiation, the wavelength of which is more than 150 nm, in particular more than 100 nm.
  • measures are taken to prevent the radiation coming from the radiation source unit from being incident directly on the target material to eliminate reflections at the target material which can then pass to the collector mirror and thus also by way of the intermediate focus into the illumination system (therefore to provide that said radiation as desired is incident on the target material only after reflection at the additional mirror).
  • a screening or an aperture member which at least partially screens radiation deflected by the radiation source unit directly in the direction of the plasma ignition position from a target material at the plasma ignition position.
  • radiation deflected by the radiation source unit in the direction of the plasma ignition position can also be divided up in such a way that it is guided past a target material at the plasma ignition position.
  • infrared radiation is incident from the radiation source directly on the target material as long as only a significant proportion of that radiation is deflected past the target material and is incident on the secondary mirror.
  • Figure 1 shows a diagrammatic view of the structure of an EUV light source in accordance with an embodiment of the invention
  • Figures 2a-b show a portion ( Figure 2a) on an enlarged scale and a front view respectively of a detail of the EUV light source in Figure 1
  • Figures 2a-b show a portion ( Figure 2a) on an enlarged scale and a front view respectively of a detail of the EUV light source in Figure 1 ,
  • Figure 2c shows a diagrammatic detail view to describe a further embodiment of the invention
  • Figure 3 shows a diagrammatic view to describe the structure of a conventional EUV light source
  • Figure 4 shows a diagrammatic view to illustrate the behaviour of a target droplet in the plasma ignition position in the Figure 3 structure.
  • an EUV light source 100 has a radiation source unit 105 which in the illustrated embodiment is in the form of a C0 2 laser for producing infrared radiation 106 at a wavelength ⁇ « 10.6 ⁇ . That infrared radiation 106 serves for heating target material 132 which is produced by a target source 135 and fed to a plasma ignition position 130 in which, as indicated in Figure 2b, the respective target material 132 there is excited to a plasma state in which inter alia the desired EUV radiation (in the example at a wavelength ⁇ « 13.6 nm + 0.5 nm) is emitted.
  • the desired EUV radiation in the example at a wavelength ⁇ « 13.6 nm + 0.5 nm
  • the target source 135 is designed to feed target material 132 in droplet form, more precisely for feeding tin (Sn) droplets, into the beam path of the radiation source unit 105, the target source 135 being synchronised with the laser pulses generated by the C0 2 laser.
  • the invention however is not limited thereto so that in other embodiments the target material 132 can also be produced for example in the form of a continuous target jet and/or from other target material by the target source 105 and can be fed to the plasma ignition position 130.
  • the EUV light source 100 further has a collector mirror 1 10 in the form of an ellipsoidal mirror and having an opening 1 1 1 for the radiation 106 coming from the radiation source unit 105 to pass therethrough.
  • the plasma ignition position 130 is arranged in one of the foci of the ellipsoid formed by the collector mirror 1 10, whereas the other focus of the collector mirror 1 10 corresponds to an intermediate focus 140. From that intermediate focus 140 the radiation arriving here passes into a subsequent illumination system, the boundary 140 of which is indicated in Figure 1 and which has an opening 141 for the light to enter.
  • the dimensions of the collector mirror 1 10 can be suitably selected depending on the respective specific design factors, in which respect values of the curvature of the collector mirror 1 10 merely by way of example can be in the range of between 300 mm and 400 mm while the diameter of the collector mirror 1 10 can be for example between 600 mm and 800 mm.
  • the opening 1 1 1 in the collector mirror 1 10 can be for example of a diameter in the range of between 50 mm and 100 mm.
  • the infrared radiation 106 produced by the radiation source unit 105 or the C0 2 laser from the direction of the radiation source unit 105 is not for example already focused, but rather is fed in the form of a parallel beam to the plasma ignition position 130.
  • the consequence of that inter alia is that at least by far the predominant proportion of the infrared radiation 106 initially passes a target droplet which is in the plasma ignition position 130 (and which for example can be of a diameter of some 100 ⁇ ) without it being possible for that infrared radiation 106 to be reflected by the target droplet (as for example in the conventional structure described with reference to Figure 3).
  • the EUV light source 100 now has a further secondary mirror 120.
  • the curvature of the secondary mirror 120 depends on the spacing relative to the plasma or the target material in the plasma ignition position and approximately corresponds to that spacing.
  • the additional secondary mirror 120 reflects the incident infrared radiation 106 produced by the radiation source unit 105 and focuses it back on to the plasma ignition position 130.
  • the resulting heating of the target material 132 in the plasma ignition position 130 causes a transition to the plasma state in which the desired EUV radiation is emitted (at a wavelength ⁇ « 13.6 nm).
  • That EUV radiation (identified by '138' in Figure 2a) is incident on the collector mirror 1 10 and is coupled thereby into the illumination system by way of the intermediate focus (IF).
  • IF intermediate focus
  • proportion of infrared radiation 106 which is not converted into heat energy for heating the target material 132 but is reflected by the target material in the plasma state that reflected infrared radiation (identified by '137' in the portion on an enlarged scale in Figure 2a), unlike the situation in the conventional structure in Figure 3, is no longer incident on the collector mirror 1 10 and consequently can also no longer be collected by the collector mirror 1 10 and fed into the illumination system.
  • any wavelengths not in the infrared range in the radiation emitted by the target material can possibly go to the collector mirror 1 10, but are less problematical than the infrared radiation as suitable filter devices are available.
  • the collector mirror 1 10, on its reflecting surface may have an absorbent coating for the absorption of radiation at a wavelength of at least 100 nm and/or a diffractive structure 1 12 for diffracting radiation of a wavelength of at least 100 nm.
  • the radiation source unit 105 can also be arranged displaced in relation to the position which is shown in Figure 1 and which is symmetrical in relation to the system axis in order in that way to guide an increased proportion of radiation past the target material 132 towards the secondary mirror 120 and further reduce the amount of direct reflections of the infrared radiation 106 at the target material.
  • an unwanted feed of laser radiation serving to excite the plasma in the EUV light source into the illumination system can be reduced or even completely eliminated. Consequently the illumination system also does not need any filter for the wavelength of the (infrared) radiation serving for plasma excitation or at most also a wavelength filter with a comparatively low level of power density, whereby structural complication and the costs of the illumination system are reduced.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)

Abstract

La présente invention concerne une source de lumière UV extrême (EUV) pour le système d'éclairage d'un dispositif d'exposition par projection microlithographique. Selon un aspect de l'invention, une source de lumière EUV comporte une unité source de rayonnement (105), au moins une source de cible (135) permettant l'introduction d'un matériau cible (132) dans le trajet de faisceau de l'unité source de rayonnement (105) de sorte que ledit matériau cible puisse être excité, dans au moins une position d'allumage de plasma (130), par le rayonnement (106) produit par l'unité source de rayonnement (105) jusqu'à l'état de plasma avec émission d'un rayonnement EUV (138), un premier miroir qui forme un miroir collecteur (110) et qui réfléchit au moins en partie le rayonnement EUV (138) émis par le matériau cible (132) de sorte que le rayonnement EUV réfléchi passe dans le système d'éclairage, et un second miroir (120) qui réfléchit un faisceau produit par l'unité source de rayonnement (105) et le focalise sur la position d'allumage de plasma (130). Dans ce dispositif, le faisceau réfléchi par le second miroir (120) possède, après sa réflexion par le second miroir (120), une ouverture numérique supérieure à l'ouverture numérique dudit faisceau avant sa réflexion par le second miroir (120), et le rayonnement (137) réfléchi par le matériau cible (132) dans la position d'allumage de plasma, après sa focalisation par le second miroir (120), ne vient pas frapper, au moins de manière prédominante, le miroir collecteur (110).
PCT/EP2010/068699 2009-12-09 2010-12-02 Source de lumière euv pour le système d'éclairage d'un dispositif d'exposition par projection microlithographique WO2011069881A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US26794809P 2009-12-09 2009-12-09
DE102009047712.8 2009-12-09
US61/267,948 2009-12-09
DE200910047712 DE102009047712A1 (de) 2009-12-09 2009-12-09 EUV-Lichtquelle für eine Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage

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WO2011069881A1 true WO2011069881A1 (fr) 2011-06-16

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013212778A1 (de) 2013-07-01 2014-07-10 Carl Zeiss Smt Gmbh Spiegel für eine mikrolithographische Projektionslichtungsanlage sowie Verfahren zur Bearbeitung eines Spiegels
DE102013212779A1 (de) 2013-07-01 2014-07-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Reinigung eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
DE102014216125A1 (de) 2014-08-13 2014-11-20 Carl Zeiss Smt Gmbh Spiegel für eine mikrolithographische Projektionslichtungsanlage
WO2014207014A1 (fr) 2013-06-27 2014-12-31 Carl Zeiss Smt Gmbh Miroir pour système d'insolation microlithographique par projection ainsi que procédé d'usinage d'un miroir
DE102013212780A1 (de) 2013-07-01 2015-01-08 Carl Zeiss Smt Gmbh Spiegel für eine mikrolithographische Projektionslichtungsanlage sowie Verfahren zur Bearbeitung eines Spiegels
DE102014211066A1 (de) 2013-07-01 2015-01-08 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Reinigung eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
DE102014215398A1 (de) 2013-09-12 2015-03-12 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Reinigung eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
DE102014218087A1 (de) 2014-09-10 2015-10-22 Carl Zeiss Smt Gmbh Anordnung und Verfahren zur Überwachung des Kontaminationszustandes eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
US20160381776A1 (en) * 2015-06-22 2016-12-29 Kla-Tencor Corporation High Efficiency Laser-Sustained Plasma Light Source
US9632419B2 (en) 2011-09-22 2017-04-25 Asml Netherlands B.V. Radiation source
TWI700965B (zh) * 2015-06-22 2020-08-01 美商克萊譚克公司 高效率雷射支持之電漿光源
DE102022205614A1 (de) 2022-06-01 2023-06-15 Carl Zeiss Smt Gmbh Verfahren und Anordnung zum Vorhersagen der Performance eines optischen Elements in einem optischen System für die Mikrolithographie

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DE102022205614A1 (de) 2022-06-01 2023-06-15 Carl Zeiss Smt Gmbh Verfahren und Anordnung zum Vorhersagen der Performance eines optischen Elements in einem optischen System für die Mikrolithographie

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