WO2011055915A3 - 식각액 조성물 - Google Patents

식각액 조성물 Download PDF

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Publication number
WO2011055915A3
WO2011055915A3 PCT/KR2010/006956 KR2010006956W WO2011055915A3 WO 2011055915 A3 WO2011055915 A3 WO 2011055915A3 KR 2010006956 W KR2010006956 W KR 2010006956W WO 2011055915 A3 WO2011055915 A3 WO 2011055915A3
Authority
WO
WIPO (PCT)
Prior art keywords
etchant composition
metal film
based metal
compound
film
Prior art date
Application number
PCT/KR2010/006956
Other languages
English (en)
French (fr)
Other versions
WO2011055915A2 (ko
Inventor
신혜라
유인호
권오병
이유진
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100097748A external-priority patent/KR101804572B1/ko
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201080050506.3A priority Critical patent/CN102597163B/zh
Priority to JP2012536650A priority patent/JP5788400B2/ja
Publication of WO2011055915A2 publication Critical patent/WO2011055915A2/ko
Publication of WO2011055915A3 publication Critical patent/WO2011055915A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

본 발명은 철 화합물 0.1 중량% 내지 10 중량%; 질산 0.1 중량% 내지 10 중량%; 함불소 화합물 0.01 중량% 내지 5 중량%; 및 잔량의 물을 포함하고, 인산염 화합물 0.1 중량% 내지 5 중량%를 추가로 포함할 수 있는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물에 관한 것이다.
PCT/KR2010/006956 2009-11-03 2010-10-12 식각액 조성물 WO2011055915A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080050506.3A CN102597163B (zh) 2009-11-03 2010-10-12 蚀刻液组成物
JP2012536650A JP5788400B2 (ja) 2009-11-03 2010-10-12 エッチング液組成物

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2009-0105674 2009-11-03
KR20090105674 2009-11-03
KR10-2009-0105901 2009-11-04
KR20090105901 2009-11-04
KR10-2010-0097748 2010-10-07
KR1020100097748A KR101804572B1 (ko) 2009-11-03 2010-10-07 식각액 조성물

Publications (2)

Publication Number Publication Date
WO2011055915A2 WO2011055915A2 (ko) 2011-05-12
WO2011055915A3 true WO2011055915A3 (ko) 2011-09-01

Family

ID=43970496

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006956 WO2011055915A2 (ko) 2009-11-03 2010-10-12 식각액 조성물

Country Status (1)

Country Link
WO (1) WO2011055915A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050034952A (ko) * 2003-10-10 2005-04-15 엘지.필립스 엘시디 주식회사 금속배선 형성을 위한 에천트 및 이를 이용한 금속배선형성방법
KR20070060864A (ko) * 2005-12-09 2007-06-13 동우 화인켐 주식회사 금속막 식각용액
KR20080045403A (ko) * 2006-11-20 2008-05-23 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 식각방법
KR20080045854A (ko) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR20080109373A (ko) * 2007-06-13 2008-12-17 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050034952A (ko) * 2003-10-10 2005-04-15 엘지.필립스 엘시디 주식회사 금속배선 형성을 위한 에천트 및 이를 이용한 금속배선형성방법
KR20070060864A (ko) * 2005-12-09 2007-06-13 동우 화인켐 주식회사 금속막 식각용액
KR20080045403A (ko) * 2006-11-20 2008-05-23 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 식각방법
KR20080045854A (ko) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR20080109373A (ko) * 2007-06-13 2008-12-17 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법

Also Published As

Publication number Publication date
WO2011055915A2 (ko) 2011-05-12

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