WO2011045829A1 - Silicon purity measuring instrument, silicon sorting apparatus, and silicon purity measuring method - Google Patents
Silicon purity measuring instrument, silicon sorting apparatus, and silicon purity measuring method Download PDFInfo
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- WO2011045829A1 WO2011045829A1 PCT/JP2009/005324 JP2009005324W WO2011045829A1 WO 2011045829 A1 WO2011045829 A1 WO 2011045829A1 JP 2009005324 W JP2009005324 W JP 2009005324W WO 2011045829 A1 WO2011045829 A1 WO 2011045829A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
- G01N27/82—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws
- G01N27/83—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws by investigating stray magnetic fields
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- the present invention relates to a silicon purity measuring instrument, a silicon sorting device, and a silicon purity measuring method for measuring the purity of silicon.
- the silicon waste material discarded during the purification of silicon has a purity that can be used as a raw material for solar cells, and is a useful material that can be used as a resource.
- the silicon waste material is crushed and divided into blocks, sorted by its purity, and reused.
- Silicon has a characteristic that the greater the resistance value, the higher the purity.
- the resistance value is measured by a resistance measuring instrument and sorted according to the resistance value.
- a resistance measuring instrument for measuring the resistance value of a silicon block one using a 4-deep needle method is known (for example, see Patent Document 1).
- This resistance measuring device includes four deep needles (metal electrodes), and measures the resistance value of the silicon block by manually pressing these metal electrodes against the surface of the silicon block.
- the conventional resistance measuring device measures the resistance value by pressing the metal electrode against the silicon block, a measurement error due to a difference in contact pressure occurs, and the silicon block is contaminated with the metal electrode. . Further, since the resistance value of silicon increases as it oxidizes, the resistance value of the surface of the silicon block becomes higher than that of the inside thereof as time passes. Therefore, when the resistance value on the surface of the silicon block is measured by the conventional resistance measuring instrument, a resistance value higher than the resistance value inside the silicon block is measured, and the internal purity is determined at the time of selection. There is a possibility of mixing a low silicon block into a silicon block having high internal purity.
- the present invention has been made in view of the above-described circumstances, and provides a silicon purity measuring instrument, a silicon sorting device, and a silicon purity measuring method capable of preventing metal contamination of silicon and measuring the purity of silicon. With the goal.
- the present invention provides an inspection table, a magnetic field generator for generating a magnetic field for measurement so that magnetic flux is transmitted through the silicon disposed on the inspection table, and the measurement magnetic field. And a determination unit that determines the degree of attenuation of the magnetic field after being disconnected, and the purity inside the silicon is specified from the degree of attenuation determined by the determination unit.
- a housing that houses the magnetic field generator and the determination unit may be provided, and the inspection table and a display unit that displays the specified purity may be provided in the housing.
- the present invention also provides an inspection table, a magnetic field generator for generating a magnetic field for measurement so that magnetic flux is transmitted through the silicon disposed on the inspection table, and a magnetic field after the measurement magnetic field is momentarily interrupted.
- a determination unit for determining the degree of attenuation, and a silicon purity measuring device for specifying the purity of the silicon from the degree of attenuation determined by the determining unit is provided in a conveyance path for conveying silicon, and the silicon purity measuring device
- the downstream transport path is provided with a sorter for sorting the silicon based on the purity of the silicon measured by the silicon purity meter.
- the present invention generates a magnetic field for measurement so that magnetic flux is transmitted through the silicon arranged on the inspection table, instantaneously interrupts the magnetic field for measurement, and determines the degree of attenuation of the magnetic field after the instantaneous interruption.
- the internal purity of the silicon is specified from the degree of attenuation.
- an inspection table a magnetic field generator for generating a magnetic field for measurement so that magnetic flux is transmitted through the silicon disposed on the inspection table, and attenuation of the magnetic field after instantaneously interrupting the measurement magnetic field
- a determination unit for determining the degree, and the purity inside the silicon is specified from the degree of attenuation determined by the determination unit, so that metal contamination of silicon can be prevented and the purity inside the silicon can be measured.
- FIG. 1 is a perspective view showing a silicon purity measuring device according to an embodiment of the present invention.
- 2 is a cross-sectional view taken along the line II-II in FIG.
- FIG. 3 is a diagram showing a silicon purity measuring instrument in a state where a measurement magnetic field is generated.
- FIG. 4 is a diagram illustrating a voltage waveform of the measurement coil.
- FIG. 5 is a diagram showing the relationship between attenuation characteristics and silicon internal purity.
- FIG. 6 is a diagram showing the relationship between the decay time and the silicon internal purity.
- FIG. 7 is a block diagram showing a functional configuration of the silicon purity measuring instrument.
- FIG. 8 is a schematic configuration diagram showing a silicon sorting apparatus.
- FIG. 1 is a perspective view showing a silicon purity measuring device according to an embodiment of the present invention.
- 2 is a cross-sectional view taken along the line II-II in FIG.
- the silicon purity measuring instrument 10 includes a substantially box-shaped housing 12.
- a switch 22 and a display unit 24 are disposed adjacent to the upper plate 12A of the housing 12.
- An inspection table 13 on which a silicon block (silicon) 200 is placed is integrally formed on the upper plate 12A of the housing 12.
- the inspection table 13 is configured using, for example, a non-metallic material such as plastic. Thereby, the contact between the silicon block 200 and the metal is prevented, and the metal contamination of the silicon block 200 is prevented.
- the silicon block 200 is, for example, a crushed material obtained by crushing silicon waste material generated during silicon purification to a predetermined level. Since each silicon block 200 is a crushed material, it has various shapes. In the present embodiment, the silicon block 200 is crushed so as to have a size of about 5 cm, for example. However, about 5 cm refers to the length when the length between arbitrary ends of one silicon block 200 is measured.
- a magnetic field generator 14 for generating a measurement magnetic field, a printed circuit board 16 to which the magnetic field generator 14 is attached, and a measurement unit 30 (see FIG. 7) are housed in the housing 12.
- a case 18 is accommodated.
- the magnetic field generator 14 is provided below the inspection table 13 and includes a pair of measurement coils 14A.
- the pair of measurement coils 14 ⁇ / b> A is disposed adjacent to the printed circuit board 16.
- the magnetic field generator 14 generates a measurement magnetic field by causing the measurement coil 14A to oscillate at a high frequency.
- the shield case 18 is attached to the back side of the printed circuit board 16.
- FIG. 3 is a diagram showing the silicon purity measuring instrument 10 in a state where a measurement magnetic field is generated.
- the magnetic field for measurement 100 generated by the magnetic field generator 14 is extended from the magnetic field generator 14 to the inspection table 13 side so that the magnetic flux passes through the silicon block 200 arranged on the inspection table 13. It has become.
- the silicon purity measuring instrument 10 of the present embodiment is configured to measure the purity inside the silicon block 200 in a range from the inspection table 13 to a predetermined height H (for example, 10 mm).
- H for example, 10 mm
- FIG. 4 is a diagram illustrating a voltage waveform of the measurement coil 14A.
- FIG. 4 shows time on the horizontal axis and voltage on the vertical axis.
- the measurement coil 14A (FIG. 2) is oscillated at a high frequency
- the high frequency output is rapidly cut off to the measurement coil 14A and the measurement magnetic field is momentarily interrupted, as shown in a region X in FIG.
- the voltage of the working coil 14A is attenuated, and the voltage waveform becomes an attenuation (ringing) waveform.
- This attenuation characteristic and the silicon internal purity.
- FIG. 5 shows the relationship between attenuation characteristics and silicon internal purity.
- FIG. 5 shows time on the horizontal axis and voltage on the vertical axis.
- P1 to P4 shown in FIG. 5 indicate the height of the silicon internal purity
- FIG. 5 shows the attenuation characteristics for each silicon internal purity.
- the silicon internal purity increases in the order of P4, P3, P2, and P1.
- the voltage gradually attenuates as the silicon internal purity increases.
- the time until the voltage is attenuated to a predetermined voltage V 2 has a longest time t 1 in the attenuation characteristic of the highest silicon inside purity P1, time decay characteristics of the silicon inside purity P2
- the time t 3 is the decay characteristic of t 2
- the shortest time t 4 is the decay characteristic of the lowest silicon internal purity P 4 . That is, the higher the silicon internal purity, the longer the decay time.
- the leading voltage V 0 (see FIG. 4) of the ringing waveform may change depending on the temperature or the like. Therefore, the decay time (t P1 to t P4 ) until the voltage decays from the predetermined voltage V 1 (for example, 1.5 V) to the predetermined voltage V 2 (for example, 0.5 V) and the silicon internal purity (P1 to P4) It is desirable to see the relationship.
- FIG. 6 shows the relationship between the decay time and the silicon internal purity.
- the horizontal axis represents the decay time
- the vertical axis represents the silicon internal purity.
- decay time for the voltage to decay from the predetermined voltages V 1 to a predetermined voltage V 2 the longer the higher the silicon inside purity, has a longest decay time t P1 tallest silicon inside purity P1, silicon
- the internal purity P2 is the decay time tP2
- the silicon internal purity P3 is the decay time tP3
- the lowest silicon internal purity P4 is the shortest decay time tP4 .
- FIG. 7 is a block diagram showing a functional configuration of the silicon purity measuring instrument 10.
- the silicon purity measuring instrument 10 includes a control unit 20 that controls the silicon purity measuring instrument 10 and a measuring unit 30 that is connected to the control unit 20 and measures the purity inside the silicon block.
- the control unit 20 includes a CPU, RAM, ROM, and the like (not shown), executes a measurement process for measuring the purity inside the silicon block, and outputs a measurement control signal to the measurement unit 30.
- the control unit 20 is connected to a switch 22 for executing measurement processing.
- a display unit 24 is connected to the control unit 20, and the display unit 24 displays display contents according to the processing result.
- the measurement unit 30 includes an oscillation unit 32, a voltage detection unit 34, an attenuation degree determination unit (determination unit) 36, and a silicon purity specifying unit 38.
- the oscillating unit 32 is configured using, for example, a Colpitts type high frequency oscillator.
- the oscillating unit 32 performs high frequency oscillation based on the measurement control signal output from the control unit 20 and outputs a high frequency to the magnetic field generator 14.
- the voltage detection unit 34 detects the voltage of the magnetic field generator 14 (measurement coil 14A) based on the measurement control signal output by the control unit 20, and outputs this voltage to the attenuation degree determination unit 36.
- the attenuation degree determination unit 36 determines an attenuation time between the predetermined voltages V 1 and V 2 from the voltage output from the voltage detection unit 34, and outputs the determined attenuation time to the silicon purity specifying unit 38.
- the silicon purity identification unit 38 identifies the internal purity of the silicon block corresponding to the decay time output by the attenuation degree determination unit 36 as a plurality of levels, and outputs the identified levels to the control unit 20 as a measurement result.
- the number of levels is set according to the number of selected silicon blocks, and is set to three in the present embodiment. For example, as shown in FIG. 6, when the decay time is equal to or greater than the decay time t P1 , the silicon purity identifying unit 38 identifies the purity as level A, and when the decay time is equal to or greater than the decay time t P2 , the decay time t P1. If less, the purity is specified as level B, and if the decay time is less than the decay time tP2 , the purity is specified as level C.
- the decay times t P1 and t P2 serving as the threshold values are set according to the purity required for selection, and are stored in the ROM so as to be readable by the CPU.
- the control unit 20 When the switch 22 is pressed by the operator, the control unit 20 outputs a measurement control signal to the oscillation unit 32 and the voltage detection unit 34.
- the oscillating unit 32 When the measurement control signal is input, the oscillating unit 32 outputs a high frequency to the measurement coil 14A of the magnetic field generator 14 for a predetermined period (for example, 10 ⁇ sec), and rapidly outputs the high frequency to the measurement coil 14A. Cut off.
- the voltage detection unit 34 detects the voltage of the measurement coil 14 ⁇ / b> A and outputs this voltage to the attenuation degree determination unit 36.
- the attenuation degree determination unit 36 determines an attenuation time between the predetermined voltages V 1 and V 2 from the input voltage, and sends the determined attenuation time to the silicon purity specifying unit 38. Output.
- the silicon purity specifying unit 38 compares the input attenuation time with the attenuation times t P1 and t P2 that are threshold values , and the purity of the silicon block 200 is one of the levels A to C.
- the specified level is output to the control unit 20 as a measurement result.
- the control unit 20 outputs the measurement result to the display unit 24 and causes the display unit 24 to display the purity inside the silicon block 200 as “A”, “B”, or “C”. .
- the internal purity of the silicon block 200 can be measured, so that the silicon block 200 can be properly selected.
- the purity inside the silicon block 200 can be measured simply by placing the silicon block 200 on the inspection table 13, the surface of the silicon block 200 that is close to the flat surface is searched and four metal electrodes are pressed against it. Compared to the case, it is possible to perform measurement in a short time without the trouble of measurement work and to reduce measurement errors. In addition, since measurement can be performed in a short time, work efficiency can be improved and cost can be reduced. Since it is not necessary to press the metal electrode against the silicon block 200, metal contamination of the silicon block 200 can be prevented.
- FIG. 8 is a schematic configuration diagram showing a silicon sorting apparatus on which the silicon purity measuring instrument 10 is mounted.
- the silicon sorting apparatus 1 includes a supply unit 40 to which the silicon block 200 is supplied, a transfer path 50 for transferring the silicon block 200 supplied from the supply unit 40, and the transfer process of the transfer path 50, A silicon purity measuring instrument 10 for measuring the internal purity and a selector 60 for selecting the silicon block 200 are provided.
- the feeder 40 is provided upstream of the conveyance path 50 and supplies the silicon block 200 supplied by an operator or the like to the conveyance path 50 at a predetermined interval L.
- the predetermined interval L is set to a distance that does not affect the measurement by the silicon purity measuring instrument 10.
- the conveyance path 50 is configured using a non-metallic material. Thereby, the contact between the silicon block 200 and the metal is prevented, and the metal contamination of the silicon block 200 is prevented.
- the conveyance path 50 is constituted by a conveyor or the like, for example, and conveys the silicon block 200 from the supply device 40 to the sorter 60 via the silicon purity measuring device 10 as indicated by an arrow in the figure.
- the conveyance path 50 extends above the silicon purity measuring instrument 10 and is disposed close to the inspection table 13 (FIG. 1).
- the sorter 60 is provided downstream of the conveyance path 50, and sorts the silicon block 200 into sorting containers 60A to 60C according to the purity measured by the silicon purity measuring instrument 10.
- the sorting containers 60A to 60C correspond to the purity levels A to C determined by the silicon purity measuring instrument 10.
- the silicon sorting apparatus 1 includes a controller 70 that controls the entire silicon sorting apparatus 1.
- the controller 70 is connected to the supplier 40, the control unit 20 of the silicon purity measuring instrument 10, and the selector 60.
- the controller 70 When the silicon sorting apparatus 1 is turned on, the controller 70 outputs a supply control signal to the supplier 40.
- the supplier 40 supplies the silicon block 200 to the transport path 50 at a predetermined interval L based on the supply control signal output from the controller 70.
- the silicon block 200 supplied to the transport path 50 is transported onto the silicon purity measuring instrument 10 by the transport path 50, and the internal purity is measured.
- the silicon purity measuring instrument 10 can measure the purity inside the silicon block 200 even when the silicon block 200 is disposed on the transport path 50.
- the silicon block 200 whose internal purity has been measured is transported to the sorter 60 by the transport path 50.
- the controller 70 acquires a measurement result indicating the internal purity of the silicon block 200 from the control unit 20 of the silicon purity measuring instrument 10, and outputs the measurement result to the selector 60.
- the sorter 60 sorts the transferred silicon block 200 into sorting containers 60A to 60C based on the measurement result output from the controller 70. That is, when the measurement result is “A”, the sorter 60 accommodates the corresponding silicon block 200 in the sorting container 60A, and when the measurement result is “B”, the sorter 60 accommodates the corresponding silicon block 200 in the sorting container 60B. When the measurement result is “C”, the corresponding silicon block 200 is accommodated in the sorting container 60C.
- the silicon purity measuring instrument 10 uses the measurement magnetic field 100 so that the magnetic flux passes through the inspection table 13 and the silicon block 200 disposed on the inspection table 13. Of the silicon block 200 based on the degree of attenuation determined by the attenuation degree determination unit 36. Identify internal purity.
- the silicon purity measuring instrument 10 includes a housing 12 that houses a measuring unit 30 including a magnetic field generator 14 and an attenuation degree determining unit 36, and displays the inspection table 13 and the specified purity on the housing 12. A display unit 24 is provided. For this reason, while the purity inside the silicon block 200 can be measured, it is not necessary to press the metal electrode against the silicon block 200, so that metal contamination of the silicon block 200 can be prevented.
- the silicon purity specifying unit 38 specifies the internal purity of the silicon block 200 corresponding to the input attenuation time by dividing it into a plurality of levels. From the information indicating the relationship, the internal purity of the silicon block 200 corresponding to the input decay time may be specified as a numerical value. In this case, information indicating the relationship between the decay time and the silicon internal purity is acquired in advance by repeating an experiment or the like, and is stored in the ROM so as to be readable by the CPU. Moreover, you may specify purity by both a numerical value and a level. Therefore, the display unit 24 may display a numerical value of purity, or may display both a numerical value and a level of purity.
- the silicon purity measuring device 10 was mounted in the silicon
- the magnetic field generator 14 was arrange
- the silicon purity measuring instrument 10 having a one-channel configuration in which one magnetic field generator 14 is disposed below the inspection table 13 has been described as an example.
- a plurality of magnetic field generators are disposed below the inspection table 13.
- the silicon purity measuring instrument may be configured in a multi-channel configuration.
- the magnetic field generators may be operated separately in a time division manner, or grouped for each magnetic field generator that does not cause mutual interference when operated simultaneously at the same frequency, and each group is time-division-based. May be configured to operate sequentially. With this configuration, it is possible to configure the silicon purity measuring instrument 10 at a higher speed and with a higher throughput.
- the silicon sorting apparatus 1 is configured to measure the purity inside the silicon block 200 in a state where the silicon block 200 is arranged on the conveyance path 50.
- the silicon block on the conveyance path 50 is It is good also as a structure which carries 200 to the inspection stand 13 of the silicon purity measuring device 10.
Abstract
Description
シリコンブロックの抵抗値を測定する抵抗測定器としては、4深針法を用いたものが知られている(例えば、特許文献1参照)。この抵抗測定器は、4本の深針(金属製電極)を備え、これらの金属製電極を人手によってシリコンブロックの表面に押し当てることにより、シリコンブロックの抵抗値を測定する。 The silicon waste material discarded during the purification of silicon has a purity that can be used as a raw material for solar cells, and is a useful material that can be used as a resource. The silicon waste material is crushed and divided into blocks, sorted by its purity, and reused. Silicon has a characteristic that the greater the resistance value, the higher the purity. Conventionally, the resistance value is measured by a resistance measuring instrument and sorted according to the resistance value.
As a resistance measuring instrument for measuring the resistance value of a silicon block, one using a 4-deep needle method is known (for example, see Patent Document 1). This resistance measuring device includes four deep needles (metal electrodes), and measures the resistance value of the silicon block by manually pressing these metal electrodes against the surface of the silicon block.
また、シリコンは、酸化するほど抵抗値が高くなるので、シリコンブロックの表面は、時間が経つにつれ、その内部よりも抵抗値が高くなる。したがって、上記従来の抵抗測定器によってシリコンブロックの表面の抵抗値を測定した場合には、シリコンブロックの内部の抵抗値よりも高い抵抗値が測定されてしまい、選別の際に、内部の純度が低いシリコンブロックを内部の純度が高いシリコンブロックに混入させるおそれがある。
本発明は、上述した事情に鑑みてなされたものであり、シリコンの金属汚染を防止し、シリコンの内部の純度を測定できるシリコン純度測定器、シリコン選別装置、及びシリコン純度測定方法を提供することを目的とする。 However, since the conventional resistance measuring device measures the resistance value by pressing the metal electrode against the silicon block, a measurement error due to a difference in contact pressure occurs, and the silicon block is contaminated with the metal electrode. .
Further, since the resistance value of silicon increases as it oxidizes, the resistance value of the surface of the silicon block becomes higher than that of the inside thereof as time passes. Therefore, when the resistance value on the surface of the silicon block is measured by the conventional resistance measuring instrument, a resistance value higher than the resistance value inside the silicon block is measured, and the internal purity is determined at the time of selection. There is a possibility of mixing a low silicon block into a silicon block having high internal purity.
The present invention has been made in view of the above-described circumstances, and provides a silicon purity measuring instrument, a silicon sorting device, and a silicon purity measuring method capable of preventing metal contamination of silicon and measuring the purity of silicon. With the goal.
図1は、本発明の実施の形態に係るシリコン純度測定器を示す斜視図である。図2は、図1のII-II断面図である。
シリコン純度測定器10は、図1に示すように、略箱状の筐体12を備えている。筐体12の上板12Aには、スイッチ22及び表示部24が隣接して配置されている。筐体12の上板12Aには、シリコンブロック(シリコン)200を載せる検査台13が一体に形成されている。検査台13は、例えば、プラスチック等の非金属製の素材を用いて構成されている。これにより、シリコンブロック200と金属との接触が防止され、シリコンブロック200の金属汚染が防止される。 Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a perspective view showing a silicon purity measuring device according to an embodiment of the present invention. 2 is a cross-sectional view taken along the line II-II in FIG.
As shown in FIG. 1, the silicon
磁界発生器14によって発生した測定用磁界100は、磁界発生器14から検査台13側に長くなるようにされており、検査台13上に配置されたシリコンブロック200の内部に磁束が透過するようになっている。本実施の形態のシリコン純度測定器10は、検査台13から所定の高さH(例えば、10mm)までの範囲において、シリコンブロック200の内部の純度を測定できるように構成されている。
純度の測定には、測定用コイル14Aへの高周波の出力を遮断したときの、測定用コイル14Aとシリコンブロック200との相互作用による磁界の減衰度合いが利用される。 FIG. 3 is a diagram showing the silicon
The magnetic field for
For the purity measurement, the degree of attenuation of the magnetic field due to the interaction between the
一般に、測定用コイル14A(図2)を高周波で発振させ、測定用コイル14Aへ高周波の出力を急速に遮断して測定用磁界を瞬断すると、図4中の領域Xに示すように、測定用コイル14Aの電圧が減衰し、電圧波形は減衰(リンギング)波形となる。この減衰特性とシリコン内部純度との間には、相関関係がある。 FIG. 4 is a diagram illustrating a voltage waveform of the
In general, when the
図5に示すように、電圧は、シリコン内部純度が高いほど緩やかに減衰している。より詳細には、電圧が所定電圧V2に減衰するまでの時間は、一番高いシリコン内部純度P1の減衰特性で一番長い時間t1となっており、シリコン内部純度P2の減衰特性で時間t2、シリコン内部純度P3の減衰特性で時間t3、そして、一番低いシリコン内部純度P4の減衰特性で一番短い時間t4となっている。すなわち、シリコン内部純度が高いほど減衰する時間が長くなっている。 FIG. 5 shows the relationship between attenuation characteristics and silicon internal purity. FIG. 5 shows time on the horizontal axis and voltage on the vertical axis. P1 to P4 shown in FIG. 5 indicate the height of the silicon internal purity, and FIG. 5 shows the attenuation characteristics for each silicon internal purity. The silicon internal purity increases in the order of P4, P3, P2, and P1.
As shown in FIG. 5, the voltage gradually attenuates as the silicon internal purity increases. More specifically, the time until the voltage is attenuated to a predetermined voltage V 2, has a longest time t 1 in the attenuation characteristic of the highest silicon inside purity P1, time decay characteristics of the silicon inside purity P2 The time t 3 is the decay characteristic of t 2 , the silicon internal purity P 3 , and the shortest time t 4 is the decay characteristic of the lowest silicon internal purity P 4 . That is, the higher the silicon internal purity, the longer the decay time.
電圧が所定電圧V1から所定電圧V2に減衰するまでの減衰時間も、シリコン内部純度が高いほど長くなり、一番高いシリコン内部純度P1で一番長い減衰時間tP1となっており、シリコン内部純度P2で減衰時間tP2、シリコン内部純度P3で減衰時間tP3、そして、一番低いシリコン内部純度P4で一番短い減衰時間tP4となっている。 FIG. 6 shows the relationship between the decay time and the silicon internal purity. In FIG. 6, the horizontal axis represents the decay time, and the vertical axis represents the silicon internal purity.
Also decay time for the voltage to decay from the predetermined voltages V 1 to a predetermined voltage V 2, the longer the higher the silicon inside purity, has a longest decay time t P1 tallest silicon inside purity P1, silicon The internal purity P2 is the decay time tP2 , the silicon internal purity P3 is the decay time tP3 , and the lowest silicon internal purity P4 is the shortest decay time tP4 .
シリコン純度測定器10は、シリコン純度測定器10を制御する制御部20と、この制御部20に接続され、シリコンブロックの内部の純度を測定する測定部30とを備えている。制御部20は、図示しないCPU、RAM、ROM等を備え、シリコンブロックの内部の純度を測定する測定処理を実行して、測定制御信号を測定部30に出力する。制御部20には、測定処理を実行させるためのスイッチ22が接続されている。また、制御部20には、表示部24が接続されており、この表示部24は、処理結果に応じた表示内容を表示する。 FIG. 7 is a block diagram showing a functional configuration of the silicon
The silicon
作業者によってスイッチ22が押されると、制御部20は、測定制御信号を発振部32及び電圧検出部34に出力する。発振部32は、測定制御信号が入力されると、所定の期間(例えば、10μsec)だけ高周波を磁界発生器14の測定用コイル14Aに出力し、測定用コイル14Aへの高周波の出力を急速に遮断する。
電圧検出部34は、測定制御信号が入力されると、測定用コイル14Aの電圧を検出し、この電圧を減衰度合い判定部36に出力する。減衰度合い判定部36は、電圧検出部34から電圧が入力されると、入力された電圧から所定電圧V1,V2間の減衰時間を判定し、判定した減衰時間をシリコン純度特定部38に出力する。 Next, the operation of the silicon
When the
When the measurement control signal is input, the
シリコン選別装置1は、シリコンブロック200が供給される供給器40と、この供給器40から供給されたシリコンブロック200を搬送する搬送路50と、この搬送路50の搬送過程で、シリコンブロック200の内部の純度を測定するシリコン純度測定器10と、シリコンブロック200を選別する選別器60とを備えている。
供給器40は、搬送路50の上流に設けられ、作業者等によって供給されたシリコンブロック200を所定の間隔Lで搬送路50に供給する。所定の間隔Lは、シリコン純度測定器10での測定に影響が出ない程度の距離に設定される。 FIG. 8 is a schematic configuration diagram showing a silicon sorting apparatus on which the silicon
The
The
選別器60は、搬送路50の下流に設けられ、シリコン純度測定器10が測定した純度に応じて、シリコンブロック200を選別容器60A~60Cに選別する。なお、選別容器60A~60Cは、シリコン純度測定器10によって判定される純度のレベルA~Cと対応している。 The
The
シリコン選別装置1は、シリコン選別装置1全体を制御するコントローラ70を備えている。コントローラ70は、供給器40、シリコン純度測定器10の制御部20、及び選別器60に接続されている。 Of the
The
シリコン選別装置1に電源が投入されると、コントローラ70は、供給器40に対して供給制御信号を出力する。供給器40は、コントローラ70が出力した供給制御信号に基づいて、シリコンブロック200を所定の間隔Lで搬送路50に供給する。搬送路50に供給されたシリコンブロック200は、搬送路50によってシリコン純度測定器10上に搬送され、内部の純度が測定される。なお、シリコン純度測定器10は、シリコンブロック200が搬送路50上に配置された状態でも、シリコンブロック200の内部の純度を測定できるようになっている。 Next, the operation of the
When the
例えば、上記実施の形態では、シリコン純度特定部38は、入力された減衰時間に対応するシリコンブロック200の内部の純度を複数のレベルに分けて特定していたが、減衰時間とシリコン内部純度との関係を示す情報から、入力された減衰時間に対応するシリコンブロック200の内部の純度を数値として特定してもよい。この場合、減衰時間とシリコン内部純度との関係を示す情報は、予め実験を繰り返す等により取得されており、CPUにより読み出し可能にROMに格納される。また、純度を数値及びレベルの両方で特定してもよい。したがって、表示部24には、純度の数値を表示させてもよく、また、純度の数値及びレベルの両方を表示させてもよい。 However, the above embodiment is an aspect of the present invention, and it is needless to say that the embodiment can be appropriately changed without departing from the gist of the present invention.
For example, in the above embodiment, the silicon
また、上記実施の形態では、検査台13の下方に磁界発生器14を配置したが、磁界発生器14を検査台13の側方、あるいは、上方に配置してもよい。 Moreover, in the said embodiment, although the silicon
Moreover, in the said embodiment, although the
10 シリコン純度測定器
12 筐体
13 検査台
14 磁界発生器
14A 測定用コイル
24 表示部
36 減衰度合い判定部(判定部)
40 供給器
50 搬送路
60 選別器
100 測定用磁界
200 シリコンブロック(シリコン) DESCRIPTION OF
40
Claims (4)
- 検査台と、この検査台上に配置したシリコンの内部に磁束が透過するように測定用磁界を発生させる磁界発生器と、前記測定用磁界を瞬断した後の磁界の減衰度合いを判定する判定部とを備え、前記判定部が判定した減衰度合いから前記シリコンの内部の純度を特定することを特徴とするシリコン純度測定器。 An inspection table, a magnetic field generator that generates a magnetic field for measurement so that magnetic flux passes through the silicon disposed on the inspection table, and a determination for determining the degree of attenuation of the magnetic field after the measurement magnetic field is momentarily interrupted A silicon purity measuring instrument that identifies the purity of the silicon from the degree of attenuation determined by the determination unit.
- 前記磁界発生器及び前記判定部を収容する筐体を備え、この筐体に前記検査台と、特定した純度を表示する表示部とを設けたことを特徴とする請求項1に記載のシリコン純度測定器。 2. The silicon purity according to claim 1, further comprising a housing that accommodates the magnetic field generator and the determination unit, wherein the inspection table and a display unit that displays the specified purity are provided in the housing. Measuring instrument.
- 検査台と、この検査台上に配置したシリコンの内部に磁束が透過するように測定用磁界を発生させる磁界発生器と、前記測定用磁界を瞬断した後の磁界の減衰度合いを判定する判定部とを備え、前記判定部が判定した減衰度合いから前記シリコンの内部の純度を特定するシリコン純度測定器を、シリコンを搬送する搬送路に設け、前記シリコン純度測定器の下流の前記搬送路に、前記シリコン純度測定器で測定した前記シリコンの内部の純度に基づいて、前記シリコンを選別する選別器を設けたことを特徴とするシリコン選別装置。 An inspection table, a magnetic field generator that generates a magnetic field for measurement so that magnetic flux passes through the silicon disposed on the inspection table, and a determination for determining the degree of attenuation of the magnetic field after the measurement magnetic field is momentarily interrupted A silicon purity measuring device that specifies the purity inside the silicon from the degree of attenuation determined by the determining unit, and is provided in a transport path that transports silicon, and the transport path downstream of the silicon purity meter A silicon sorter comprising a sorter for sorting the silicon based on the purity inside the silicon measured by the silicon purity meter.
- 検査台に配置したシリコンの内部に磁束が透過するように測定用磁界を発生させ、この測定用磁界を瞬断し、瞬断後の磁界の減衰度合いを判定し、判定した減衰度合いからシリコンの内部の純度を特定することを特徴とするシリコン純度測定方法。 A magnetic field for measurement is generated so that magnetic flux is transmitted through the silicon placed on the inspection table, this magnetic field for measurement is momentarily interrupted, and the degree of attenuation of the magnetic field after the instantaneous interruption is determined. A silicon purity measuring method, characterized by specifying an internal purity.
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61217756A (en) * | 1985-03-25 | 1986-09-27 | Matsushita Electric Ind Co Ltd | Detector for amount of fine magnetic substance |
JPS62108148A (en) * | 1985-11-06 | 1987-05-19 | Shigeru Kitagawa | Method and device for detecting quality of metal |
JPH05203627A (en) * | 1991-08-30 | 1993-08-10 | Xerox Corp | Toner density sensor |
JPH0743417B2 (en) * | 1990-03-17 | 1995-05-15 | 財団法人国際超電導産業技術研究センター | Method and apparatus for detecting magnetic internal property of superconductor |
JPH0778489B2 (en) * | 1986-10-10 | 1995-08-23 | リンデル、ステン | Non-contact method and measuring device for measuring the magnitude of parameters relating to conductive materials |
WO1999064853A1 (en) * | 1998-06-12 | 1999-12-16 | Hitachi, Ltd. | Metal sorting method and device |
JP2001228120A (en) * | 2000-02-18 | 2001-08-24 | Nkk Corp | METHOD FOR Si CONCENTRATION MEASUREMENT OF STEEL PRODUCT |
JP2005303045A (en) * | 2004-04-13 | 2005-10-27 | Mitsubishi Materials Corp | Silicon component and manufacturing method thereof |
JP2005343781A (en) * | 2004-06-03 | 2005-12-15 | Iis Materials:Kk | Refining method for scrap silicon using electron beam |
JP2009532198A (en) * | 2006-03-31 | 2009-09-10 | トーマス バレリオ、 | Method and apparatus for classifying fine non-ferrous metals and insulated wire fragments |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5841023A (en) * | 1993-08-31 | 1998-11-24 | Boehringer Mannheim Corporation | Magnet for medical instrument |
JPH0778489A (en) * | 1993-09-08 | 1995-03-20 | Nec Corp | Storage device |
JP3857271B2 (en) * | 2001-09-21 | 2006-12-13 | トック・エンジニアリング株式会社 | Metal foreign object detection method and apparatus |
JP4312104B2 (en) * | 2004-06-03 | 2009-08-12 | 新日本製鐵株式会社 | Magnetic body internal structure measuring method and apparatus |
-
2009
- 2009-10-13 WO PCT/JP2009/005324 patent/WO2011045829A1/en active Application Filing
- 2009-10-13 CN CN2009801617627A patent/CN102549418A/en active Pending
- 2009-10-13 JP JP2010508544A patent/JP5138770B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61217756A (en) * | 1985-03-25 | 1986-09-27 | Matsushita Electric Ind Co Ltd | Detector for amount of fine magnetic substance |
JPS62108148A (en) * | 1985-11-06 | 1987-05-19 | Shigeru Kitagawa | Method and device for detecting quality of metal |
JPH0778489B2 (en) * | 1986-10-10 | 1995-08-23 | リンデル、ステン | Non-contact method and measuring device for measuring the magnitude of parameters relating to conductive materials |
JPH0743417B2 (en) * | 1990-03-17 | 1995-05-15 | 財団法人国際超電導産業技術研究センター | Method and apparatus for detecting magnetic internal property of superconductor |
JPH05203627A (en) * | 1991-08-30 | 1993-08-10 | Xerox Corp | Toner density sensor |
WO1999064853A1 (en) * | 1998-06-12 | 1999-12-16 | Hitachi, Ltd. | Metal sorting method and device |
JP2001228120A (en) * | 2000-02-18 | 2001-08-24 | Nkk Corp | METHOD FOR Si CONCENTRATION MEASUREMENT OF STEEL PRODUCT |
JP2005303045A (en) * | 2004-04-13 | 2005-10-27 | Mitsubishi Materials Corp | Silicon component and manufacturing method thereof |
JP2005343781A (en) * | 2004-06-03 | 2005-12-15 | Iis Materials:Kk | Refining method for scrap silicon using electron beam |
JP2009532198A (en) * | 2006-03-31 | 2009-09-10 | トーマス バレリオ、 | Method and apparatus for classifying fine non-ferrous metals and insulated wire fragments |
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