WO2011039883A1 - Module d'éclairage - Google Patents

Module d'éclairage Download PDF

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Publication number
WO2011039883A1
WO2011039883A1 PCT/JP2009/067164 JP2009067164W WO2011039883A1 WO 2011039883 A1 WO2011039883 A1 WO 2011039883A1 JP 2009067164 W JP2009067164 W JP 2009067164W WO 2011039883 A1 WO2011039883 A1 WO 2011039883A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical module
substrate
recess
semiconductor
wiring
Prior art date
Application number
PCT/JP2009/067164
Other languages
English (en)
Japanese (ja)
Inventor
健一 田中
雅博 青木
俊樹 菅原
和彦 細見
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP2011534017A priority Critical patent/JP5390623B2/ja
Priority to PCT/JP2009/067164 priority patent/WO2011039883A1/fr
Publication of WO2011039883A1 publication Critical patent/WO2011039883A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • the present invention relates to an optical module.
  • Patent Document 1 An example of an optical module used for optical communication is disclosed in Patent Document 1.
  • This optical module has an LD and a PD mounted on a printed circuit board, and is entirely covered with a transparent resin, leaving a part of the lead pins required for connection with an external circuit.
  • an electric signal is sent by passing a current of several tens of mA to drive the LD, whereas on the receiving side, the PD receives an electric signal with a small current of the order of ⁇ A or less. For this reason, in an optical module in which an LD and a PD are mixedly mounted, it is necessary to suppress the electric signal current flowing through the substrate to the order of several tens of nA in order to prevent electrical crosstalk.
  • the LD and PD are mounted close to each other in the same package. Therefore, when the conductor through which the LD drive signal flows and the conductor through which the PD light reception signal flows are close to each other, an electrical crosstalk occurs in which the electromagnetic field radiated by the drive signal is mixed into the light reception signal.
  • driving of an LD and a PD generally causes unnecessary electromagnetic field radiation and coupling to occur mainly between gold wires for extracting a signal from an element or a package.
  • An object of the present invention is to provide an optical module excellent in high-frequency transmission.
  • an optical module in which an optical element is mounted on a multilayer substrate, the multilayer substrate is provided with a recess with an inner layer wiring exposed on the bottom surface, and the optical element is accommodated in the recess and exposed on the bottom surface. Some are connected to the inner layer wiring.
  • FIG. 3 is a three-dimensional view illustrating an outline of the optical module according to the first embodiment.
  • FIG. 1 is a development view illustrating an outline of an optical module according to a first embodiment.
  • FIG. 3 is a cross-sectional view of the optical module according to the first embodiment, and is a cross-sectional view taken along line AB of FIG. It is a figure which shows the mode of the whole large sized board
  • FIG. 6 is a development view of an optical module according to Embodiment 2.
  • FIG. 1 is a development view illustrating an outline of an optical module according to a first embodiment.
  • FIG. 3 is a cross-sectional view of the optical module according to the first embodiment, and is a cross-sectional view taken along line AB of FIG. It is a figure which shows the mode of the whole large sized board
  • FIG. 6 is a development view of the optical module of Example 3. It is sectional drawing in AB of FIG. 6 is a three-dimensional external view of the optical module of Example 4. It is sectional drawing in AB of FIG. 6 is a three-dimensional external view of the optical module of Example 4. FIG. 6 is a development view of the optical module of Example 4. It is sectional drawing in AB of FIG. FIG. 10 is a three-dimensional external view of the optical module of Example 5. 10 is a schematic diagram of an optical module according to Embodiment 6. FIG. 10 is a schematic diagram of an optical module according to Example 7. FIG. 10 is a cross-sectional view illustrating an outline of an optical module according to Example 8. FIG.
  • FIG. 15 is a schematic diagram illustrating an external appearance of an optical module according to Example 12.
  • FIG. 15 is a schematic diagram illustrating an external appearance of an optical module according to Example 12. It is the schematic explaining the external appearance which mounted the optical module which concerns on Example 13 in a can stem. It is the schematic explaining the external appearance which mounted the optical module which concerns on Example 13 in a can stem.
  • FIG. 1 is a three-dimensional view for explaining the outline of the optical module according to the first embodiment
  • FIG. 2 is a development view for explaining the outline of the optical module according to the first embodiment
  • FIG. 3 is a cross-sectional view of the optical module according to the first embodiment, and shows a cross-sectional view taken along line AB of FIG.
  • the X direction in FIGS. 1 to 3 is the left-right direction
  • the Y direction is the front-rear direction
  • the Z direction is the up-down direction.
  • the optical module 1 is a laminated substrate on which three semiconductor members 10, a light emitting element 11 that is a semiconductor laser, a light receiving element 12 that is a photodiode, and a semiconductor IC 13 that is a transimpedance amplifier are mounted. 20 is provided.
  • the laminated substrate 20 includes concave portions 50 and 51.
  • the multilayer substrate 20 is composed of a three-layer multilayer substrate, and each layer is provided with a wiring pattern in accordance with the mounting form of the semiconductor member. Further, the lowermost wiring pattern has an extraction electrode 30 for connecting an external terminal.
  • the extraction electrode 30 for connecting the external terminal can be connected on the upper surface of the substrate by forming the lower substrate a little larger.
  • the optical module 1 When the optical module 1 is manufactured, in order to increase productivity and reduce manufacturing costs, a large substrate that is a circuit board having a large area is prepared, and a semiconductor member including an optical element is mounted on the large substrate. Thus, an assembly of optical modules is formed, and a large number of individual optical modules 1 are obtained by dividing the assembly. Since the optical module is obtained as an individual small unit as a result of the process as described above, the optical module is hereinafter referred to as a “single cell”. The details of the single cell manufacturing method will be described later.
  • the recess 50 shown in FIG. 1 includes a through hole 502 in the third layer substrate 21 and a through hole 501 in the second layer substrate 22. On the first layer substrate 23. Therefore, with respect to the recess 50, a part of the wiring pattern 31 of the first layer substrate 23 is exposed from the through holes 501 and 502.
  • the recess 51 shown in FIG. 1 is formed of a through hole 503 in the third layer substrate 21 of the laminated substrate, and the bottom surface of the recess 51 is on the second layer substrate 22. Therefore, regarding the recess 51, the wiring pattern 32 of the second-layer substrate 22 is exposed from the through hole 503.
  • the wiring pattern 31 of the substrate 23 and the wiring pattern 32 of the substrate 22 connected to the extraction electrode 30 for connecting the external terminal are electrically connected through the through hole 33.
  • Wiring patterns 30, 31, and 32 are microstrip lines or coplanar lines that enable low-loss high-frequency transmission.
  • the light emitting element 11 mounted on the single cell 1 is mounted on the first layer substrate 23 on the bottom surface of the recess 50 and is electrically connected to the wiring 31.
  • the wire 31 is used for electrical connection with the wire 31.
  • face-down bonding in which one side is mounted with solder without using a wire may be used.
  • the light receiving element 12 mounted on the single cell 1 and the transimpedance amplifier, which is the semiconductor IC 13 serving as a drive driver circuit are mounted on the wiring 32 of the substrate 22 on the bottom surface of the recess 51 and are electrically connected.
  • the wire 32 is used for electrical connection with the wiring 32, but face-down bonding in which one side is mounted with solder without using a wire may be used.
  • the height position in the single cell 1 of the light emitting element 11 mounted in the recess 50, the light receiving element 12 mounted in the recess 51, and the semiconductor IC 13 which is a drive driver circuit will be described.
  • the light emitting element 11 is mounted on the wiring 31 of the substrate 23, and the light receiving element 12 and the semiconductor IC 13 are mounted on the wiring 32 of the substrate 22.
  • the thickness of the second-layer substrate 22 is d1
  • the thickness of the third-layer substrate 21 is d2
  • the thickness of the light-emitting element 11 is d3
  • the thickness of the light-receiving element 12 and the semiconductor IC 13 that is the drive driver circuit is thicker. Is expressed as d4.
  • the thickness d1 of the second-layer substrate 22 is thicker than the thickness d3 of the light-emitting element 11, and further, the thickness d2 of the third-layer substrate 21 is added. It is located on the bottom of a recess surrounded by a much higher sidewall.
  • the thickness d2 of the third-layer substrate 21 is configured to be thicker than the thickness d4 of the light receiving element 12 and the semiconductor IC 13. Since the optical elements 11 and 12 and the semiconductor IC 13 of the present embodiment are mounted on the bottom surface of the concave portion of the laminated substrate, and the optical elements 11 and 12 are surrounded by the side walls, optical crosstalk and electrical crossing are performed. Talk is suppressed.
  • the optical crosstalk affects the light receiving sensitivity of the photodiode, and the electrical crosstalk causes deterioration of the high frequency characteristics. However, since they can be suppressed, the characteristics of the optical module are improved. Moreover, when making an electrical connection by wire bonding, it is preferable to store the wire in the recess.
  • each semiconductor member is surrounded by walls on all sides, the optical crosstalk between the light emitting element 11 and the light receiving element 12 can be reduced.
  • a thermal via is formed directly under a semiconductor member such as the light emitting element 11, the passive element 12, or the semiconductor IC 13, heat can be efficiently radiated to the outside.
  • an optical module manufacturing method When manufacturing an optical module, an assembly of optical modules is made using a large substrate, which is a circuit board having a large area.
  • FIG. 4 and 5 are diagrams showing a state when the mounting of the element on the large substrate is completed, and FIG. 4 shows an entire state of the large substrate on which the element is mounted.
  • FIG. It is an enlarged view of the part of the dotted line part of 4.
  • the large substrate 70 is preferably formed of a ceramic material such as an LTCC (Low Temperature Co-fired Ceramic) substrate, and is a multi-layer laminated substrate including, for example, three dielectric layers as described above.
  • LTCC Low Temperature Co-fired Ceramic
  • FIG. 2 there is a wiring pattern at a position corresponding to the mounting layout on the surface of the second layer substrate. Similarly, a wiring pattern also exists on the first-layer substrate surface at a position corresponding to the mounting layout and the second-layer substrate surface wiring pattern.
  • the large substrate 70 has a conductive layer in which a wiring pattern is formed between dielectric layers.
  • the wiring pattern formed in the conductive layer includes a wiring pattern on the front surface and the back surface, and through holes (if necessary). (Including thermal vias).
  • elements such as a light emitting element, a passive element, and a transimpedance amplifier are mounted in a plurality of recesses provided on the large substrate as described above.
  • the recesses provided on each of the large substrates 70 are mounted on the wiring pattern using an adhesive having conductivity with respect to electricity and heat.
  • the light emitting element may be mounted with high accuracy by image recognition or the like using a marker (not shown in the figure) on the multilayer substrate as a reference.
  • the light receiving element and the transimpedance amplifier are also aligned and mounted in the other recess with high accuracy.
  • the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 may be wired by wire bonding or the like.
  • the large substrate 70 (mounted substrate) on which the mounting of the semiconductor member or the like is completed is an assembly of single cells, dicing is performed to complete the product as a single cell as shown in FIG.
  • FIG. 6 is a three-dimensional external view of the optical module of Example 2, and FIG. 7 is a development view thereof. Further, FIG. 8 is a cross-sectional view taken along the line AB of FIG.
  • the optical module of this example also includes a single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and Concave portions 50 and 51 for accommodating the semiconductor IC 13 are provided and have the same configuration as that of the first embodiment. Therefore, the light emitting element 11 is a semiconductor laser, the light receiving element 12 is a photodiode, and the semiconductor IC 13 is a transimpedance amplifier.
  • the thickness of the light emitting element 11 is d3, the thickness of the thick semiconductor member of the light receiving element 12 and the semiconductor IC 13 is d4, and the thickness of the substrate 22 of the unit cell 1 is. d1, and the thickness of the substrate 21 is d2.
  • the semiconductor member mounted on the single cell 1 can be completely accommodated in the recess. Therefore, as shown in FIG. 6, the lid 40 can be placed in the recesses 50 and 51. Accordingly, since the light emitting element 11 and the light receiving element 12 can be individually sealed, the optical crosstalk between the light emitting element 11 and the light receiving element 12 can be drastically reduced.
  • the lids 40 may be lids 41 and 42 provided with a wavelength selection filter function.
  • FIG. 9 is a three-dimensional external view of the optical module of Example 3, and FIG. 10 is a development view thereof. Further, FIG. 11 is a cross-sectional view taken along the line AB of FIG.
  • the optical module of this example also includes a single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and Concave portions 50 and 51 for accommodating the semiconductor IC 13 are provided and have the same configuration as that of the first embodiment.
  • Example 1 and Example 2 all electrode wirings for connection to the outside were connected to the wirings 31 of the substrate 23 through through holes and taken out.
  • the electrode wiring for connection to the outside is taken out by the wiring 31 on the substrate 23, and the wiring 32 on the substrate 22 is taken out by the wiring 32. Do.
  • a through hole is not necessary. Also, the electrical characteristics are improved.
  • FIG. 12 is a three-dimensional external view of the optical module of Example 4, and FIG. 13 is a development view thereof. Further, FIG. 14 is a cross-sectional view taken along the line AB of FIG.
  • the optical module of this example also includes a single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and the like.
  • Concave portions 50 and 51 for housing the semiconductor IC 13 are provided, and the configuration is the same as in the first to third embodiments.
  • connection portion with the external wiring formed in the single cell 1 will be described.
  • all external connections were taken from the lowermost layer wiring
  • Example 3 external connections were taken from the wirings on the respective substrates. In this example, it is taken out from the wiring on the uppermost substrate.
  • the wiring 32 on the substrate 22 is connected to the electrode 35 of the substrate 21 through the through hole 34
  • the wiring 31 on the substrate 23 is connected to the electrode 35 of the substrate 21 through the through hole 34.
  • the electrode 35 of the uppermost substrate 21 is used for the connection.
  • an electrode for external extraction may be formed on the back surface of the substrate 23 through the through hole.
  • FIG. 15 is a cross-sectional view illustrating an outline of the optical module according to the fifth embodiment.
  • the optical module of this example also includes the single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and the semiconductor IC 13.
  • Recesses 50 and 51 are provided for housing the same as in the first to fourth embodiments.
  • the relationship between the depths of the recesses 50 and 51 formed in the single cell 1 and the thickness of the semiconductor members of the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 to be mounted will be described.
  • the relationship between the thicknesses d1 and d2 of the substrate 22 and the substrate 23 constituting the single cell 1 and the semiconductor member to be mounted, that is, the thickness d3 of the light emitting element 11, is d1. If + d2> d3, the light emitting element 11 can be completely accommodated in the recess. If the light emitting element 11 can be completely accommodated in the recess, it can be sealed using a lid having an optical element. At this time, d1 ⁇ d3 may be satisfied.
  • the thickness d2 of the substrate 23 is such that the light receiving element 12 and the semiconductor IC 13 accommodated in the recess. Of these, it is necessary to make it thicker than the thickness d4 of the thick semiconductor member (d2> d4).
  • d1 + d2> d3 and d2> d4 may be used to individually seal the recess 50 in which the light emitting element 11 is mounted and the recess 51 in which the light receiving element 12 is mounted.
  • D1 0 may be satisfied.
  • the recess 50 for mounting the light emitting element 11 and the recess 51 for mounting the light receiving element 12 can be individually sealed, optical crosstalk can be prevented.
  • FIG. 16A is a top view and FIG. 16B is a cross-sectional view illustrating an outline of an optical module according to the sixth embodiment.
  • the optical module of this example also includes the single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and the semiconductor IC 13.
  • the recesses 52 and 53 are provided for housing the same as in the first to fifth embodiments.
  • the concave portion 53 is configured using a hole provided in the substrate 23 of FIG. 1, and the concave portion 52 is provided in the substrate 22 of FIG. 1 as shown in FIG. 16 (B). It is configured using only holes.
  • the recessed part 52 is sealed using the lid
  • the recess 53 can be sealed using the lid 401.
  • the case where it does not seal using a lid is also considered. In this case, the relationship between the depth of the recess and the thickness of the semiconductor member mounted on the recess is not questioned.
  • the concave portion 52 for mounting the light emitting element 11 and the concave portion 53 for mounting the light receiving element 12 can be individually “surrounded” or “sealed”, thereby preventing optical crosstalk. it can.
  • FIG. 17 is a (A) top view and (B) cross-sectional view for explaining the outline of the optical module according to the seventh embodiment.
  • the optical module of this example also includes the single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and the semiconductor IC 13.
  • And recesses 54 and 55 are provided, and the configuration is the same as in the first to sixth embodiments.
  • the recesses 52 and 53 formed in the single cell 1 and a method for sealing it will be described.
  • the recess 53 has a configuration using holes provided in the substrate 23 of FIG. 1, and the recess 52 is provided in the substrate 22 of FIG. 1 as shown in FIG. It is configured using only holes.
  • the recess 52 is sealed using a lid 403 as shown in FIG.
  • the recess 53 covers only the upper part of the light receiving element 12 using the lid 404.
  • there may be a case where “enclosed on all sides” or “sealing” with a lid is not performed. In this case, the relationship between the depth of the recess and the thickness of the semiconductor member mounted on the recess is not questioned.
  • the concave portion 52 for mounting the light emitting element 11 and the concave portion 53 for mounting the light receiving element 12 can be individually “surrounded” or “sealed”, thereby preventing optical crosstalk. be able to.
  • FIG. 18 is a cross-sectional view illustrating an outline of an optical module according to the eighth embodiment.
  • the optical module of this example also includes the single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11, the light receiving element 12, and the semiconductor IC 13. Are provided in the same manner as in the first to sixth embodiments.
  • the lid also has an optical element.
  • the lid may have a refractive lens as shown in FIG.
  • the lens of the lid 405 is mounted after position adjustment so as to be optimal with respect to the optical axis of the light oscillated from the light emitting element 11.
  • the lens of the lid 406 is also mounted after position adjustment so as to be optimal with respect to the optical axis of the light input to the light receiving element 12.
  • the concave portion 56 for mounting the light emitting element 11 and the concave portion 57 for mounting the light receiving element 12 can be individually sealed, optical crosstalk can be prevented and input / output of light can be performed. It can also be performed with high efficiency.
  • FIG. 19 is a schematic diagram for explaining the external appearance of the optical module according to the ninth embodiment mounted on a can stem.
  • the cap and the like are omitted so that members mounted inside the can stem can be confirmed.
  • the multi-layer laminated substrate of the optical module of this example also includes a single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11 and the light receiving element. 12 and a recess for accommodating the semiconductor IC 13 are provided, and the configuration is the same as in the first to eighth embodiments.
  • the single cell 1 shown in FIGS. 6, 9, and 12 can be mounted on the can stem by the method shown in FIG.
  • FIG. 20 to 21 are schematic views for explaining the external appearance of the optical module according to the tenth embodiment mounted on the can stem
  • FIG. 20 is a top view of the three-dimensional external view of the optical module mounted on the can stem. Shows a view of only a single cell of the optical module as seen from the back side.
  • the multi-layer laminated substrate of the optical module of this example includes a single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11 and A recess for receiving the light receiving element 12 and the semiconductor IC 13 is provided, and the configuration is the same as in the first to eighth embodiments.
  • the single cell 1 mounted on the can stem of FIG. 19 is a modified version of the substrate of FIGS. 1, 6, 9, and 12, and external extraction wiring is extracted from the back surface as shown in FIG. Using this external lead-out wiring on the back surface, it is possible to establish an electrical connection directly with the lead pin of the can stem.
  • FIG. 22 is a schematic diagram for explaining an external appearance when packaging is performed after the optical module according to Example 11 is mounted on the can stem.
  • the multi-layer laminated substrate of the optical module of this example includes a single cell 1 on which the light emitting element 11, the light receiving element 12, and the semiconductor IC 13 are mounted.
  • the single cell 1 includes the light emitting element 11 and the light receiving element. 12 and a recess for accommodating the semiconductor IC 13 are provided, and the configuration is the same as in the first to eighth embodiments.
  • the single cell 1 is mounted on the can package by the method shown in FIG. 19 or FIG. 20, for example, an optical member 61 having a wavelength separation (WDM) filter and a lens member is mounted on the can stem. Then, in order to enable input / output by the optical fiber, in order to optically connect the fiber ferrule 63, the member 63 and the member 61 are connected using the spacer 62, and the assembly is completed.
  • the unit cell 1 can be sealed before the member 61 is mounted on the can stem.
  • 23 to 24 are schematic diagrams for explaining the appearance of the optical module according to the twelfth embodiment.
  • Wiring patterns 301, 302, 302, and 304 are formed for each layer of the multi-layer laminated substrate 201, 202, 203, and 204 of the single cell 1, respectively.
  • the respective signals can be assigned to the wiring 301, the wiring 302, the wiring 303, and the wiring 304 for transmission.
  • electrical crosstalk between signals can be reduced.
  • the wiring 302 on the substrate 202 is connected to the wiring 301 of the substrate 201 through a through hole.
  • the wiring 303 of the substrate 203 and the wiring 304 of the substrate 204 are electrically connected to the wiring 301 of the substrate 201.
  • all the wirings of each layer can be connected to the outside from the wirings 301 of the substrate 201.
  • a wiring pattern may be drawn to the back surface of the substrate 209 using a through hole, and an electrode for external extraction may be formed on the back surface of the substrate 209.
  • FIGS. 25 to 26 are schematic views for explaining the external appearance of the optical module according to the thirteenth embodiment mounted on a can stem.
  • Wiring patterns 305, 306, 307, and 308 are formed for each layer of the multi-layer laminated substrate 205, 206, 207, and 208 of the single cell 1, respectively.
  • the respective signals can be assigned to the wiring 305, the wiring 306, the wiring 307, and the wiring 308 for transmission. Thereby, electrical crosstalk between the signals can be reduced.
  • connection to the outside can be made from the wiring 305 of the substrate 205, the wiring 306 of the substrate 206, the wiring 307 of the substrate 207, and the wiring 308 of the substrate 208.
  • a wiring pattern may be drawn to the back surface of the substrate 205 using a through hole, and an electrode for external extraction may be formed on the back surface of the substrate 213.
  • the optical module is configured as a transmission / reception optical module. included.
  • An optical module comprising a semiconductor member and a substrate for mounting the semiconductor member, wherein the substrate having a wiring pattern formed on at least one surface of the substrate is laminated, and A concave portion is formed on one surface, and the semiconductor member is housed in the concave portion formed on one surface of the substrate, and is electrically connected to the wiring of the substrate.
  • the wiring pattern formed on the surface constitutes an electrode portion for external extraction.
  • the semiconductor member in the optical module of (1) is at least one of a light emitting element and a light receiving element. Further, the semiconductor member in the optical module of the present invention is the light emitting element and the light receiving element alone and a plurality thereof, or a combination of the light emitting element and the light receiving element.
  • the substrate of (1) is a kind of substrate selected from a printed circuit board and a ceramic substrate.
  • the substrate can be made of one kind of material, and a plurality of large substrates can be taken, so that the mounting cost including the assembly process can be reduced.
  • the board wiring of (1) is a type selected from a coplanar line and a microstrip line. With this configuration, a high frequency signal can be transmitted with low loss.
  • the substrate of (1) is provided with an electrical shield layer inside. With this configuration, electric crosstalk can be further reduced.
  • a thermal via is provided inside the substrate of (1), particularly immediately below the semiconductor member.
  • the depth of the concave portion is formed deeper than the height of the semiconductor member, and the concave portion is closed with a lid.
  • signal wiring is provided in each layer on at least one surface so that signals input to and output from different elements are transmitted to the wiring in each layer.
  • the substrate of (1) is provided with at least one or more through holes for connecting a wiring pattern formed on one surface with a wiring pattern formed on the other surface of the substrate,
  • the wiring formed on the surface constitutes an electrode for external extraction.
  • the substrate on which the wiring pattern is formed is laminated, and the wiring pattern is provided on each layer on at least one surface, so that the wiring of each layer has different elements.
  • Each input / output signal is transmitted.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention se rapporte à un module d'éclairage doté de caractéristiques de haute fréquence améliorées. Un exemple est un module d'éclairage caractérisé en ce que l'élément d'éclairage est monté sur un panneau stratifié. Le panneau stratifié comporte un renfoncement situé sur sa surface inférieure à l'intérieur duquel un câblage de couche interne est mis à nu. Selon l'invention également, ledit élément d'éclairage est logé à l'intérieur dudit renfoncement et il est connecté au câblage de couche interne qui est mis à nu sur la surface de dessous.
PCT/JP2009/067164 2009-10-01 2009-10-01 Module d'éclairage WO2011039883A1 (fr)

Priority Applications (2)

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JP2011534017A JP5390623B2 (ja) 2009-10-01 2009-10-01 光モジュール
PCT/JP2009/067164 WO2011039883A1 (fr) 2009-10-01 2009-10-01 Module d'éclairage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2009/067164 WO2011039883A1 (fr) 2009-10-01 2009-10-01 Module d'éclairage

Publications (1)

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WO2011039883A1 true WO2011039883A1 (fr) 2011-04-07

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PCT/JP2009/067164 WO2011039883A1 (fr) 2009-10-01 2009-10-01 Module d'éclairage

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JP (1) JP5390623B2 (fr)
WO (1) WO2011039883A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017094279A1 (fr) * 2015-12-01 2017-06-08 シャープ株式会社 Photodétecteur et dispositif électronique le comportant
US20210218221A1 (en) * 2018-03-27 2021-07-15 Nichia Corporation Light emitting device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10268148A (ja) * 1997-03-21 1998-10-09 Sumitomo Electric Ind Ltd 多電極アレイ装置
JP2003110245A (ja) * 2001-09-28 2003-04-11 Ibiden Co Ltd 光学素子実装用基板の製造方法、光学素子実装用基板及び光学素子
JP2004363185A (ja) * 2003-06-02 2004-12-24 Stanley Electric Co Ltd 光通信用モジュール
JP2005331732A (ja) * 2004-05-20 2005-12-02 Auto Network Gijutsu Kenkyusho:Kk 光接続装置
JP2006011092A (ja) * 2004-06-25 2006-01-12 Ngk Spark Plug Co Ltd 光モジュール、光モジュール用セラミック基板
JP2008294152A (ja) * 2007-05-23 2008-12-04 Sumitomo Electric Ind Ltd 光モジュール
JP2009027088A (ja) * 2007-07-23 2009-02-05 Fuji Xerox Co Ltd 半導体発光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10268148A (ja) * 1997-03-21 1998-10-09 Sumitomo Electric Ind Ltd 多電極アレイ装置
JP2003110245A (ja) * 2001-09-28 2003-04-11 Ibiden Co Ltd 光学素子実装用基板の製造方法、光学素子実装用基板及び光学素子
JP2004363185A (ja) * 2003-06-02 2004-12-24 Stanley Electric Co Ltd 光通信用モジュール
JP2005331732A (ja) * 2004-05-20 2005-12-02 Auto Network Gijutsu Kenkyusho:Kk 光接続装置
JP2006011092A (ja) * 2004-06-25 2006-01-12 Ngk Spark Plug Co Ltd 光モジュール、光モジュール用セラミック基板
JP2008294152A (ja) * 2007-05-23 2008-12-04 Sumitomo Electric Ind Ltd 光モジュール
JP2009027088A (ja) * 2007-07-23 2009-02-05 Fuji Xerox Co Ltd 半導体発光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017094279A1 (fr) * 2015-12-01 2017-06-08 シャープ株式会社 Photodétecteur et dispositif électronique le comportant
US20210218221A1 (en) * 2018-03-27 2021-07-15 Nichia Corporation Light emitting device

Also Published As

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JP5390623B2 (ja) 2014-01-15
JPWO2011039883A1 (ja) 2013-02-21

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