WO2011038242A3 - Injecteur de gaz hybride - Google Patents

Injecteur de gaz hybride Download PDF

Info

Publication number
WO2011038242A3
WO2011038242A3 PCT/US2010/050217 US2010050217W WO2011038242A3 WO 2011038242 A3 WO2011038242 A3 WO 2011038242A3 US 2010050217 W US2010050217 W US 2010050217W WO 2011038242 A3 WO2011038242 A3 WO 2011038242A3
Authority
WO
WIPO (PCT)
Prior art keywords
axis
gas injector
distal end
extending along
bore extending
Prior art date
Application number
PCT/US2010/050217
Other languages
English (en)
Other versions
WO2011038242A2 (fr
Inventor
Fergal O'moore
Karl Williams
Nam Le
Vincent Brown
Original Assignee
Ferrotec (Usa) Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferrotec (Usa) Corporation filed Critical Ferrotec (Usa) Corporation
Priority to EP10819542.1A priority Critical patent/EP2481082B1/fr
Priority to JP2012531072A priority patent/JP5802672B2/ja
Priority to KR1020127006659A priority patent/KR20120085745A/ko
Priority to CN201080042558.6A priority patent/CN102656666B/zh
Publication of WO2011038242A2 publication Critical patent/WO2011038242A2/fr
Publication of WO2011038242A3 publication Critical patent/WO2011038242A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Un injecteur de gaz destiné à être utilisé pour l'injection d'un gaz de traitement dans un espace contenu dans un four vertical entre une tour soutenant de multiples plaques et une chemise tubulaire comprend une paille tubulaire comportant une extrémité distale ouverte et un premier trou s'étendant le long d'un premier axe et se composant d'un premier matériau unique sélectionné dans le groupe constitué par le silicium, le quartz, et le carbure de silicium, et un connecteur relié amovible à la section paille, composé d'un second matériau autre que le premier matériau et comprenant un tube d'alimentation comportant un second trou s'étendant le long d'un second axe perpendiculaire au premier axe et en communication fluidique avec le premier trou et comportant une extrémité distale pouvant être reliée à une ligne d'alimentation en gaz.
PCT/US2010/050217 2009-09-25 2010-09-24 Injecteur de gaz hybride WO2011038242A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP10819542.1A EP2481082B1 (fr) 2009-09-25 2010-09-24 Injecteur de gaz hybride
JP2012531072A JP5802672B2 (ja) 2009-09-25 2010-09-24 ハイブリッドガスインジェクタ
KR1020127006659A KR20120085745A (ko) 2009-09-25 2010-09-24 하이브리드 가스 인젝터
CN201080042558.6A CN102656666B (zh) 2009-09-25 2010-09-24 混合气体注射器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27736109P 2009-09-25 2009-09-25
US61/277,361 2009-09-25

Publications (2)

Publication Number Publication Date
WO2011038242A2 WO2011038242A2 (fr) 2011-03-31
WO2011038242A3 true WO2011038242A3 (fr) 2011-06-16

Family

ID=43796508

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/050217 WO2011038242A2 (fr) 2009-09-25 2010-09-24 Injecteur de gaz hybride

Country Status (6)

Country Link
US (1) US20110232568A1 (fr)
EP (1) EP2481082B1 (fr)
JP (1) JP5802672B2 (fr)
KR (1) KR20120085745A (fr)
CN (1) CN102656666B (fr)
WO (1) WO2011038242A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2705031T3 (es) * 2012-04-27 2019-03-21 Arkema Inc Campana para recubrir recipientes de vidrio con vapor de óxido metálico
JP6176732B2 (ja) * 2014-03-20 2017-08-09 株式会社日立国際電気 ガス供給部、基板処理装置及び半導体装置の製造方法
US20170167023A1 (en) * 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems
AT518081B1 (de) * 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US11993847B2 (en) * 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
CN115386861B (zh) * 2022-10-27 2023-04-07 盛吉盛(宁波)半导体科技有限公司 一种化学气相沉积设备的导气管及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284426A (ja) * 1997-04-10 1998-10-23 Kokusai Electric Co Ltd ノズル
JP2001351871A (ja) * 2000-06-09 2001-12-21 Asm Japan Kk 半導体製造装置
WO2006030857A1 (fr) * 2004-09-16 2006-03-23 Hitachi Kokusai Electric Inc. Appareil de traitement thermique et procede de fabrication de substrat
US20060211218A1 (en) * 2005-03-03 2006-09-21 Boyle James E Baffle wafers and randomly oriented polycrystalline silicon used therefor

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US3761114A (en) * 1971-08-30 1973-09-25 Victaulic Co Ltd Pipe to flange couplings
US3942141A (en) * 1972-05-26 1976-03-02 Licentia Patent-Verwaltungs-G.M.B.H. Flange
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
US4448448A (en) * 1982-03-22 1984-05-15 Raphael Theresa Pollia Coupling system
JPH0719143Y2 (ja) * 1990-04-26 1995-05-01 日本エー・エス・エム株式会社 ガス導入装置を有するｃｖｄ装置
JPH04280420A (ja) * 1991-03-07 1992-10-06 Toshiba Corp 熱処理装置
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH05243161A (ja) * 1992-01-29 1993-09-21 Nec Corp 気相成長装置及びエピタキシャル膜の成長方法
US5441570A (en) * 1993-06-22 1995-08-15 Jein Technics Co., Ltd. Apparatus for low pressure chemical vapor deposition
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JPH09260298A (ja) * 1996-03-18 1997-10-03 Kokusai Electric Co Ltd 半導体製造装置の反応ガス導入ノズル支持構造
JP2001230212A (ja) * 2000-02-16 2001-08-24 Tokyo Electron Ltd 縦型熱処理装置
JP2001267255A (ja) * 2000-03-21 2001-09-28 Nec Corp 気相成長装置及び気相成長方法
US6450346B1 (en) 2000-06-30 2002-09-17 Integrated Materials, Inc. Silicon fixtures for supporting wafers during thermal processing
US6455395B1 (en) * 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
JP3572247B2 (ja) * 2000-10-06 2004-09-29 東芝セラミックス株式会社 半導体熱処理炉用ガス導入管
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20020170487A1 (en) * 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
US7083694B2 (en) * 2003-04-23 2006-08-01 Integrated Materials, Inc. Adhesive of a silicon and silica composite particularly useful for joining silicon parts
US6830449B1 (en) * 2004-02-02 2004-12-14 Sis Microelectronics Corporation Injector robot for replacing a gas injector in a furnace
JP2006080256A (ja) * 2004-09-09 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
US20060185589A1 (en) * 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
US7910494B2 (en) * 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
US8070880B2 (en) * 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
JP5237133B2 (ja) * 2008-02-20 2013-07-17 株式会社日立国際電気 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284426A (ja) * 1997-04-10 1998-10-23 Kokusai Electric Co Ltd ノズル
JP2001351871A (ja) * 2000-06-09 2001-12-21 Asm Japan Kk 半導体製造装置
WO2006030857A1 (fr) * 2004-09-16 2006-03-23 Hitachi Kokusai Electric Inc. Appareil de traitement thermique et procede de fabrication de substrat
US20060211218A1 (en) * 2005-03-03 2006-09-21 Boyle James E Baffle wafers and randomly oriented polycrystalline silicon used therefor

Also Published As

Publication number Publication date
EP2481082A4 (fr) 2013-07-10
WO2011038242A2 (fr) 2011-03-31
EP2481082B1 (fr) 2017-06-21
CN102656666A (zh) 2012-09-05
JP2013506300A (ja) 2013-02-21
US20110232568A1 (en) 2011-09-29
CN102656666B (zh) 2015-06-24
KR20120085745A (ko) 2012-08-01
JP5802672B2 (ja) 2015-10-28
EP2481082A2 (fr) 2012-08-01

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