WO2011029640A2 - Solar cell - Google Patents
Solar cell Download PDFInfo
- Publication number
- WO2011029640A2 WO2011029640A2 PCT/EP2010/059093 EP2010059093W WO2011029640A2 WO 2011029640 A2 WO2011029640 A2 WO 2011029640A2 EP 2010059093 W EP2010059093 W EP 2010059093W WO 2011029640 A2 WO2011029640 A2 WO 2011029640A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- front side
- base
- emitter
- semiconductor wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 238000002161 passivation Methods 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 53
- 238000000034 method Methods 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000002231 Czochralski process Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- EWT emitter-warp-through
- EWA emitter-wrap-around
- corresponding regions or layers have a physically larger vertical extension, as well as an embodiment, wherein the doping density at the corresponding regions or layers is increased.
- the base contact regions may be finger-shaped and may comprise base contact regions underneath of busbars.
- the solar cell may be formed without busbars, such that the finger-shaped base contact regions do not border on each other any place on the front side on the semiconductor.
- the base contact regions may, on the other hand, in an advantageous embodiment, be formed point-shaped, whereby such base contact points have to provide a suitable minimum surface for the subsequent contacting.
- the base contact points are preferably arranged in a grid pattern.
- the point-shaped base contact regions are base contact regions that are not only spaced apart from each other, but that are also separated from each other, in the sense that they are not electrically connected to each other through further base contact regions, but only via the base layer or additionally via base electrodes or via
- a dielectric layer 11 is positioned on a section of the back side 5, having layer openings 111 , through which a contacting of the emitter electrode 7 with the back side emitter layer 62 occurs.
- the dielectric layer 11 is in all the herein shown embodiments only optional and may for example serve for surface passivation. For this reason, it is preferably made of aluminum oxide and preferably by way of atomic layer deposition (ALD method).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/395,081 US20120167980A1 (en) | 2009-09-10 | 2010-06-25 | Solar cell |
| CN201080040171.7A CN102484146B (zh) | 2009-09-10 | 2010-06-25 | 太阳能电池 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009043975A DE102009043975B4 (de) | 2009-09-10 | 2009-09-10 | Solarzelle |
| DE102009043975.7 | 2009-09-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2011029640A2 true WO2011029640A2 (en) | 2011-03-17 |
| WO2011029640A3 WO2011029640A3 (en) | 2012-02-09 |
Family
ID=43561923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2010/059093 WO2011029640A2 (en) | 2009-09-10 | 2010-06-25 | Solar cell |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102484146B (de) |
| DE (1) | DE102009043975B4 (de) |
| WO (1) | WO2011029640A2 (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299212A (zh) * | 2011-09-28 | 2011-12-28 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池制作方法 |
| WO2013123066A1 (en) * | 2012-02-14 | 2013-08-22 | Bandgap Engineering, Inc. | Screen printing electrical contacts to nanowire areas |
| US20140174525A1 (en) * | 2011-07-01 | 2014-06-26 | Stichting Energieonderzoek Cenrum Nederland | Photovoltaic cell with wrap through connections |
| US10864950B2 (en) | 2017-12-08 | 2020-12-15 | Mclaren Automotive Limited | Moveable underslung wing |
| US11355584B2 (en) | 2008-04-14 | 2022-06-07 | Advanced Silicon Group Technologies, Llc | Process for fabricating silicon nanostructures |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820343B (zh) * | 2012-08-16 | 2014-12-10 | 常州天合光能有限公司 | 具有无发射极区的太阳能电池及其制备方法 |
| CN103985771A (zh) * | 2014-03-31 | 2014-08-13 | 南通大学 | 双面电极太阳能电池及太阳能电池阵列 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1732142A1 (de) | 2005-06-09 | 2006-12-13 | Shell Solar GmbH | Si Solarzelle und ihr Herstellungsverfahren |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4665277A (en) * | 1986-03-11 | 1987-05-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Floating emitter solar cell |
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| JP5142980B2 (ja) * | 2006-03-01 | 2013-02-13 | 三洋電機株式会社 | 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール |
-
2009
- 2009-09-10 DE DE102009043975A patent/DE102009043975B4/de active Active
-
2010
- 2010-06-25 CN CN201080040171.7A patent/CN102484146B/zh active Active
- 2010-06-25 WO PCT/EP2010/059093 patent/WO2011029640A2/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1732142A1 (de) | 2005-06-09 | 2006-12-13 | Shell Solar GmbH | Si Solarzelle und ihr Herstellungsverfahren |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11355584B2 (en) | 2008-04-14 | 2022-06-07 | Advanced Silicon Group Technologies, Llc | Process for fabricating silicon nanostructures |
| US20140174525A1 (en) * | 2011-07-01 | 2014-06-26 | Stichting Energieonderzoek Cenrum Nederland | Photovoltaic cell with wrap through connections |
| US9871151B2 (en) * | 2011-07-01 | 2018-01-16 | Stichting Energieonderzoek Centrum Nederland | Photovoltaic cell with wrap through connections |
| CN102299212A (zh) * | 2011-09-28 | 2011-12-28 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池制作方法 |
| CN102299212B (zh) * | 2011-09-28 | 2014-09-24 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池制作方法 |
| WO2013123066A1 (en) * | 2012-02-14 | 2013-08-22 | Bandgap Engineering, Inc. | Screen printing electrical contacts to nanowire areas |
| US9768331B2 (en) | 2012-02-14 | 2017-09-19 | Advanced Silicon Group, Inc. | Screen printing electrical contacts to nanowire areas |
| US10269995B2 (en) | 2012-02-14 | 2019-04-23 | Advanced Silicon Group, Inc. | Screen printing electrical contacts to nanostructured areas |
| US10864950B2 (en) | 2017-12-08 | 2020-12-15 | Mclaren Automotive Limited | Moveable underslung wing |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102009043975A1 (de) | 2011-03-24 |
| CN102484146A (zh) | 2012-05-30 |
| DE102009043975B4 (de) | 2012-09-13 |
| CN102484146B (zh) | 2014-11-19 |
| WO2011029640A3 (en) | 2012-02-09 |
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