WO2011024910A1 - Tranche de silicium pour cellules solaires et son procédé de production - Google Patents

Tranche de silicium pour cellules solaires et son procédé de production Download PDF

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Publication number
WO2011024910A1
WO2011024910A1 PCT/JP2010/064510 JP2010064510W WO2011024910A1 WO 2011024910 A1 WO2011024910 A1 WO 2011024910A1 JP 2010064510 W JP2010064510 W JP 2010064510W WO 2011024910 A1 WO2011024910 A1 WO 2011024910A1
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Prior art keywords
wire
silicon wafer
silicon
solar cells
wafer
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PCT/JP2010/064510
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English (en)
Japanese (ja)
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亮 中島
之信 貝賀
有樹 村田
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株式会社Sumco
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Publication of WO2011024910A1 publication Critical patent/WO2011024910A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a silicon wafer for a solar cell and a method for manufacturing the same, and more particularly to a silicon wafer for a solar cell that is obtained by slicing a silicon ingot for a solar cell as a base material for a silicon-based solar cell.
  • a silicon-based solar cell is manufactured by forming a PN junction on a solar cell silicon wafer obtained by slicing a single crystal silicon ingot or a polycrystalline silicon ingot, and forming electrodes on the front and back surfaces of the wafer.
  • wire saws have been used for general slices. In the slicing method using a wire saw, first, one wire is bridged between two to four groove rollers at a predetermined pitch to form a wire row. Thereafter, each groove roller is rotated to run the wire, and the solar cell silicon ingot is pressed against the wire row while supplying slurry containing loose abrasive grains onto the wire row on both sides of the ingot. Thereby, many silicon wafers for solar cells are obtained simultaneously.
  • the thickness of a general silicon wafer for solar cells is as thin as about 200 ⁇ m. Therefore, in the bi-directional feed of the wire, the silicon wafer for solar cells is cracked or chipped at the time of slicing, and the wire is easily broken. Therefore, in order to solve this problem, unidirectional feed that provides high smoothness of the slice surface has been adopted as one of the wire operating conditions (wire feed direction). As a result, the front and back surfaces of the solar cell silicon wafer were so smooth (Rmax 5 to 10 ⁇ m) that the saw marks on the grinding marks could not be confirmed.
  • silicon-based solar cells have innumerable fine irregularities formed on the surface (light-receiving surface) of a solar cell silicon wafer, and the light reflectance on this surface is reduced.
  • a method of forming irregularities on the surface of a silicon wafer for solar cells conventionally, utilizing the difference in etching rate depending on the silicon surface orientation, an alkaline aqueous solution is brought into contact with the silicon wafer for solar cells, and irregularities are formed on the wafer surface by etching.
  • a method has been developed (for example, Patent Document 1).
  • the surface roughness of Rmax of 20 ⁇ m or more could not be realized with respect to the surface of the solar cell silicon wafer due to the characteristics of crystal anisotropy.
  • an etching process is employed for forming the irregularities, an etching process different from slicing is required when manufacturing a silicon-based solar cell from a silicon wafer for solar cells. Thereby, the silicon wafer for solar cells was expensive. This also applies to the case where irregularities are formed on the surface of the solar cell silicon wafer by a method different from etching (for example, grinding, laser irradiation, etc.).
  • the invention provides a silicon wafer for a solar cell that can increase the light receiving area, obtain high photoelectric conversion efficiency, simplify the unevenness forming process different from slicing, and reduce the manufacturing cost of silicon-based solar cells. And it aims at providing the manufacturing method.
  • the present invention relates to a silicon wafer for a solar cell in which a PN junction and an electrode are formed to be processed into a silicon-based solar cell, and a large number of linear concave grooves directed in the same direction, which are saw marks that appear at the time of slicing. It is the silicon wafer for solar cells formed in the front and back.
  • the silicon wafer for solar cells has a large number of linear concave grooves in the same direction that appear on the front and back surfaces of the silicon wafer by traveling in both directions. That is, the silicon wafer for solar cells as a product is obtained without performing flattening processing such as etching, grinding, polishing, etc., which is generally performed on the silicon wafer after slicing. Thereby, the light receiving area of the silicon wafer for solar cells is expanded (wafer surface roughness of 20 ⁇ m or more is possible at Rmax), and high photoelectric conversion efficiency is obtained.
  • silicon solar cells include single crystal silicon solar cells and polycrystalline silicon solar cells.
  • a material of the silicon wafer for solar cells single crystal silicon, polycrystalline silicon, or the like can be employed.
  • a shape of the silicon wafer for solar cell a circle, a rectangle with chamfered corners (made of single crystal silicon), a rectangle (made of polycrystalline silicon), or the like can be adopted.
  • “Straight groove” means a saw mark at the time of slicing consisting of a large number of grooves that are linearly and parallelly formed in the same direction at almost equal intervals over the entire surface of the silicon wafer for solar cells. Grinding marks). This saw mark is formed by slicing a silicon ingot for solar cells while a fixed abrasive wire is traveling in both directions. For this reason, not only the surface of the silicon wafer for solar cells but also the back surface has the same linear groove on the back surface in the same direction as the groove on the wafer surface (for example, the groove on the front and back surfaces of the wafer in the X direction). Further, there may be a curved portion (sag) in one direction at both end portions of the linear groove.
  • the groove is a saw mark, there is a finer surface roughness of about 2 to 3 ⁇ m in Rmax between the bottom surface of the groove and the top surface of the wafer. Further, since the concave grooves are saw marks, the pitch and depth of the concave grooves on the wafer surface and the pitch and depth of the concave grooves on the back surface of the wafer are substantially the same. Furthermore, in the pitch direction of the silicon wafer, the groove formation position on the wafer surface and the groove formation position on the wafer back surface are substantially the same.
  • the thickness of the silicon wafer for solar cells is 160 to 220 ⁇ m. If it is less than 160 micrometers, the silicon wafer for solar cells is too thin, and the crack of a wafer increases remarkably on wafer handling. Therefore, it is effective to increase the thickness of the silicon wafer for solar cells as a countermeasure against this crack. However, if it exceeds 220 ⁇ m, the amount of silicon used is increased, and the production cost of the silicon wafer for solar cells is increased.
  • On the front and back surfaces of the silicon wafer for solar cells there is a processing damage of 1 to 5 ⁇ m (on one side of the wafer) that appears by slicing the fixed abrasive wire in both directions. Incidentally, when a wire is cut using loose abrasive grains (wires are moved in both directions), a processing damage of 5 to 15 ⁇ m generally appears on one side of the wafer.
  • the concave grooves have a pitch of 0.1 to 5 mm and a depth of 1 to 50 ⁇ m.
  • the pitch of the concave grooves formed on the front and back surfaces of the wafer is set to 0.1 to 5 mm, and the depth of the concave grooves is set to 1 to 50 ⁇ m, thereby preventing a reduction in strength of the silicon wafer for solar cells due to the formation of the concave grooves.
  • expansion of the light receiving area of the silicon wafer for solar cells and high photoelectric conversion efficiency can be satisfied at the same time.
  • the pitch of the concave grooves is less than 0.1 mm, the strength of the silicon wafer for solar cells due to the formation of the concave grooves tends to decrease. Moreover, if the pitch of a ditch
  • the present invention relates to a silicon wafer for solar cells obtained by slicing a plurality of silicon wafers for solar cells by pressing a silicon ingot for solar cells while supplying slurry to a wire row traveling between a plurality of groove rollers of a wire saw.
  • a fixed abrasive wire having abrasive grains fixed on an outer peripheral surface is used as a wire constituting the wire row, and the silicon ingot for solar cells is sliced while the wire row is traveling in both directions.
  • This is a method for manufacturing a silicon wafer for solar cells, in which a large number of linear concave grooves directed in the same direction as saw marks are formed on the front and back surfaces of each silicon wafer for solar cells.
  • a solar cell silicon ingot is pressed against a wire row composed of fixed abrasive wires traveling in both directions (forward and backward directions).
  • a large number of rough grooves (saw marks) extending in the same direction appearing when the wire row is run in both directions for example, Rmax of 20 ⁇ m or more
  • Rmax for example, 20 ⁇ m or more
  • linear grooves (saw marks) extending in the same direction with a finer Rmax of about 2 to 3 ⁇ m are formed by the fixed abrasive grains on the wire surface.
  • the use of the fixed abrasive wire increases the cutting efficiency compared with the case of slicing with a wire saw using loose abrasive grains, and the slicing speed of the silicon ingot for solar cells is increased. Even when etching for forming the groove is performed after that, the etching time can be shortened.
  • the number of wire rollers used in the wire saw is, for example, 2, 3, or 4.
  • the fixed abrasive wire is a diamond abrasive grain having a particle size of 7 to 25 ⁇ m, heat-cured or UV-irradiated with a binder on a piano wire with a concentration of 20 to 55, preferably 50 and a diameter of 100 to 300 ⁇ m, etc. Can be adopted.
  • a binder an epoxy resin, a phenol resin, an acrylic urethane resin, or the like can be used.
  • a diamond abrasive grain may be electrodeposited together with nickel on the outer peripheral surface of the wire.
  • the feed rate of the fixed abrasive wire is 500 to 1500 m / min.
  • the slurry (wrapping oil) that does not contain loose abrasive grains is not brought into the cutting portion of the ingot by the wire, and the cutting efficiency decreases. If it exceeds 1500 m / min, the slurry adhering to the wire is blown off, and the cutting efficiency is lowered.
  • the advance amount of the fixed abrasive wire is 250 to 450 m, and the retract amount of the fixed abrasive wire is 248 to 499 m.
  • the cycle time for forward and reverse is 47.7-88.9 seconds.
  • the ingot slice average speed is 400 to 1200 ⁇ m / min. In order to further improve the wafer quality, a lower speed condition is preferable, but if it is less than 400 ⁇ m / min, the productivity is lowered, and the amount of wire used may increase, resulting in an increase in cost. On the other hand, if it exceeds 1200 ⁇ m / min, an excessive load acts on the wire, the fixed abrasive grains are worn out or fall off, making ingot cutting impossible, and wire breakage is likely to occur.
  • the preferred slicing speed of the ingot is 500 to 1000 ⁇ m / min. Within this range, the flatness of the wafer can be further increased.
  • the silicon ingot for solar cells a single crystal silicon ingot or a polycrystalline silicon ingot can be adopted.
  • the single crystal silicon ingot is grown by, for example, the Czochralski (CZ) method or the floating zone melting (FZ) method.
  • the polycrystalline silicon ingot is manufactured by, for example, the Siemens method.
  • the silicon ingot for solar cells is made of polycrystalline silicon, there is a crystal grain size distribution, so unevenness with uniform size cannot be formed by conventional etching, resulting in variations in power generation efficiency within the wafer surface. There is a risk.
  • the linear concave grooves are mechanically formed by the fixed abrasive wire, a uniform power generation efficiency can be obtained in the wafer plane without depending on the crystal grain size distribution.
  • a large number of linear concave grooves are formed on the front and back surfaces of the sliced solar cell silicon wafer. Since a linear concave groove is also formed on the back surface of the silicon wafer for solar cells, when a thin film such as aluminum is formed on the back surface of the wafer in the solar cell module manufacturing process, the contact area with the thin film increases, Adhesive strength can be increased.
  • the concave groove on the back surface side may be removed by a flattening process such as polishing.
  • the operating condition of the wire at the time of slicing traveling in both directions of the wire row is adopted. For this reason, a large number of linear fine grooves in the same direction as saw marks are formed on the front and back surfaces of the silicon wafer for solar cell. Thereby, the light receiving area of the silicon wafer for solar cells is expanded, and high photoelectric conversion efficiency is obtained. In addition, it is possible to simplify the unevenness forming process different from slicing, and to reduce the manufacturing cost of the silicon-based solar cell. Moreover, by adopting a fixed abrasive wire as a wire, at the time of slicing, linear striation is performed on the front and back surfaces of the solar cell silicon wafer by the fixed abrasive.
  • linear grooves having a finer Rmax of about 2 to 3 ⁇ m are formed by the fixed abrasive grains on the wire surface.
  • the use of the fixed abrasive wire increases the cutting efficiency as compared with slicing using loose abrasive grains, and increases the slicing speed of the silicon ingot for solar cells.
  • the pitch of the groove is 0.1 to 5 mm and the depth of the groove is 1 to 50 ⁇ m.
  • FIG. 1 It is a top view of the silicon wafer for solar cells which concerns on Example 1 of this invention. It is a principal part expanded sectional view of the silicon wafer for solar cells which concerns on Example 1 of this invention.
  • A is a perspective view of the use condition of the wire saw used with the manufacturing method of the silicon wafer for solar cells which concerns on Example 1 of this invention.
  • B is a principal part enlarged view of Fig.3 (a). It is a principal part enlarged plan view which shows the slice process of the silicon ingot for solar cells which uses the fixed abrasive wire in the manufacturing method of the silicon wafer for solar cells which concerns on Example 1 of this invention.
  • W is a silicon wafer for solar cells according to Example 1 of the present invention.
  • This silicon wafer W for solar cells is formed by slicing a silicon ingot for solar cells with a wire saw to form a PN junction and an electrode. And processed into a silicon-based solar cell.
  • a large number of linear concave grooves Wa appearing in the slicing process and extending in the same direction are formed on the entire front and back surfaces of the silicon wafer W for solar cells.
  • the pitch a of the concave grooves Wa is about 1000 ⁇ m, and the depth b of the concave grooves Wa is about 5 ⁇ m.
  • the degree of surface roughness (fine groove group) c of the silicon wafer W for solar cells is about 1 ⁇ m.
  • groove Wa on the wafer back surface are the same.
  • the pitch and depth of the concave grooves Wa on the front surface of the silicon wafer W and the pitch and depth of the concave grooves Wa on the rear surface of the silicon wafer W are substantially the same.
  • the pitch direction of the concave groove Wa of the silicon wafer W the formation position of the concave groove Wa on the wafer surface and the formation position of the concave groove Wa on the back surface of the wafer are substantially the same.
  • the polycrystalline silicon ingot is crushed into a lump of a predetermined size to obtain a molten raw material for casting a polycrystalline silicon ingot for a solar cell.
  • the obtained polycrystal silicon lump is put into a crucible, and a 160 mm square polycrystal silicon ingot is manufactured by an electromagnetic melting continuous casting method.
  • a conductive bottomless crucible having an induction coil arranged on the outer periphery is used.
  • the raw material silicon inserted into the bottomless crucible is heated and melted above the melting point of silicon in a non-contact state on the inner wall of the crucible by electromagnetic induction (15 kHz, 300 kW) of the induction coil.
  • the melt in the bottomless crucible is gradually lowered downward by a drawing device and solidified by a slow cooling device disposed immediately below the bottomless crucible.
  • a polycrystalline silicon ingot is continuously manufactured.
  • the continuously cast polycrystalline silicon ingot is cut every 400 mm in length and finished to a prism having a side of 156 mm by grinding.
  • 10 is a wire saw, and this wire saw 10 is an apparatus for slicing a polycrystalline silicon ingot I cast by an electromagnetic melting continuous casting method into a silicon wafer W for solar cells made of a large number of polycrystalline silicon. It is.
  • the wire saw 10 has two groove rollers 12A and 12B arranged in a rectangular shape when viewed from the front.
  • the groove roller 12A is a driving roller connected so that the rotational force of the driving motor can be transmitted
  • the groove roller 12B is a driven roller.
  • a single fixed abrasive wire 11a is wound around the groove rollers 12A and 12B in parallel with each other at a pitch of 370 ⁇ m. Thereby, the wire row 11 appears between the groove rollers 12A and 12B.
  • the wire row 11 is reciprocated between the two groove rollers 12A and 12B by a drive motor.
  • the middle of the groove rollers 12A and 12B is the ingot cutting position a1 of the wire row 11 that cuts the polycrystalline silicon ingot I.
  • the polycrystalline silicon ingot I is fixed to the lower surface of the lifting platform 19 for raising and lowering the polycrystalline silicon ingot I through the carbon bed 19a.
  • a pair of slurry nozzles 30 for continuously supplying the slurry S onto the wire row 11 are disposed above both sides of the ingot cutting position a1.
  • wrapping oil 100 liters / min
  • the groove rollers 12A and 12B have a cylindrical shape, and their outer peripheral surfaces are covered with a lining material having a predetermined thickness made of urethane rubber.
  • a wire groove 12d is formed on the outer peripheral surface of each lining material (FIG. 3B).
  • a fixed abrasive wire 11a having a large number of abrasive grains 11b fixed to the outer peripheral surface is used as the wire.
  • a fixed abrasive wire 11a in which abrasive grains 11b made of diamond having a particle diameter of 10 to 25 ⁇ m are fixed to a wire having a diameter of 0.12 mm by Ni plating by an electrodeposition method is used.
  • the wire 11a is led out from the bobbin 20 of the feeding device 13, and is bridged over the groove rollers 12A and 12B via the supply-side guide roller. After that, it is wound around the bobbin 21 of the winding device 15 via the guide roller on the outlet side.
  • the rotating shafts of the bobbins 20 and 21 are connected to corresponding output shafts of the drive motors 16 and 17, respectively.
  • the bobbins 20 and 21 pivotally supported by the pair of bearings 18 are rotated clockwise or counterclockwise in FIG.
  • the wire 11a travels in both directions.
  • the bobbin 20 of the feeding device 13 is driven by the drive motor 16 while supplying the slurry S from the slurry nozzle 30 to the wire row 11 at 100 liters / minute. Rotate. Thereby, the wire 11a is supplied to the groove rollers 12A and 12B. At the same time, the bobbin 21 of the winding device 15 is rotated by the drive motor 17 to wind the wire 11a via the groove rollers 12A and 12B. At that time, the rotation direction of each of the bobbins 20 and 21 is changed at a constant cycle, and the wire 11a is caused to travel in both directions.
  • the advance amount of the fixed abrasive wire 11a is 250 m
  • the retreat amount of the fixed abrasive wire 11a is 248 m
  • the cycle time for changing between advance and retreat is 47.7 seconds.
  • the feed rate of the fixed abrasive wire 11a is 900 m / min.
  • the slice speed of the polycrystalline silicon ingot I is 700 ⁇ m / min.
  • the polycrystalline silicon ingot I is pressed against the wire row 11 from above.
  • the polycrystalline silicon ingot I has a rectangular shape with a length of 156 mm and a width of 120 mm, a boron concentration of 1.4 ⁇ 10 16 atoms / cm 3 , and a specific resistance of 1.0 m ⁇ ⁇ cm (P-type). It slices into the silicon wafer W for solar cells. That is, during the reciprocating traveling of the wire row 11, a large number of abrasive grains 11b are rubbed against the bottom of the cutting groove by the fixed abrasive wire 11a of the wire row 11, and the bottom is gradually scraped off by a grinding action (FIG. 4).
  • a PN junction is formed on the silicon wafer W for solar cells, and electrodes are formed on the front and back surfaces of the wafer. Specifically, phosphorus (P) is thermally diffused on the wafer surface to form an N-type diffusion layer, and then a back electrode made of aluminum is formed on the back surface of the silicon wafer W for solar cells, and silicon for solar cells. A surface electrode made of silver is formed on the surface of the wafer W.
  • each concave groove Wa has a pitch a of about 1000 ⁇ m, a depth b of about 5 ⁇ m, and a surface roughness c of about 1 ⁇ m.
  • an unevenness forming step for example, an etching step
  • the manufacturing cost of the silicon-based solar cell can be reduced.
  • the solar cell silicon wafer is compared with the case of slicing using slurry containing loose abrasive grains.
  • a rough linear groove Wa can be formed on the front and back surfaces of W. That is, the pitch a of the concave grooves Wa is about 1000 ⁇ m, and the depth b of the concave grooves Wa is about 5 ⁇ m. Further, the degree of surface roughness c of the solar cell silicon wafer W is about 1 ⁇ m.
  • the fixed abrasive wire 11a since the fixed abrasive wire 11a is used, the cutting efficiency of the polycrystalline silicon ingot I is higher than when slicing using a slurry containing loose abrasive grains. Therefore, the slice speed of the polycrystalline silicon ingot I is increased.
  • the abrasive grains 11b and the fixed abrasive wire 11a are integrated, and the moving speed of the fixed abrasive wire 11a and the moving speed of the abrasive grains 11b in the slice are the same. Because it becomes.
  • the solar cell silicon ingot was sliced in accordance with the method for producing the solar cell silicon wafer of Example 1.
  • the data of the surface roughness of the silicon wafer for solar cells at that time are shown in FIG.
  • a contact roughness meter (Surfcom 130A) manufactured by Tokyo Seimitsu Co., Ltd. was used.
  • the measurement length was 5 mm
  • the measurement speed was 0.3 mm / s
  • CutOFF was 0.8 mm.
  • the wafer surface roughness profile in the graph of FIG. 6 compared with the conventional method (surface roughness Rmax of about 5 ⁇ m) using a slurry containing loose abrasive grains and running the wire in one direction, it is for solar cells.
  • surface roughness Rmax of about 5 ⁇ m
  • FIG. 7a shows a magnification of 200 times
  • FIG. 7a shows a magnification of 200 times
  • FIG. 8 shows the results of measuring the surface roughness of the silicon wafer for solar cells using Keyence VK8500.
  • a slurry in which 110 kg of free abrasive grains (GC abrasive grains) having an average particle size of 7 to 8 ⁇ m are mixed with 100 liters of wrapping oil is used instead of the non-abrasive slurry.
  • the magnification of the site on the wafer surface is 200 times in FIG. 8a and 1000 times in FIG. 8b.
  • no linear grooves (irregularities) were observed on the surface of the solar cell silicon wafer at both low magnification and high magnification.
  • This invention is useful, for example, for silicon wafers for solar cells for power generation.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention porte sur une tranche de silicium pour cellules solaires qui comprend une pluralité de minuscules creux linéaires orientés de façon similaire, qui sont des marques de scie formées sur les surfaces avant et arrière de la tranche, ce par quoi l'aire de réception de lumière de la tranche est augmentée et un rendement de conversion photoélectrique élevé peut être obtenu. En outre, des processus de formation de saillies/creux autres qu'un tranchage sont simplifiés, et le coût de production de cellules solaires au silicium est réduit.
PCT/JP2010/064510 2009-08-28 2010-08-26 Tranche de silicium pour cellules solaires et son procédé de production WO2011024910A1 (fr)

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JP2009-199052 2009-08-28
JP2009199052A JP2012230929A (ja) 2009-08-28 2009-08-28 太陽電池用シリコンウェーハおよびその製造方法

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WO2013006077A1 (fr) * 2011-07-06 2013-01-10 Wostec, Inc. Cellule solaire dotée d'une couche nanostructurée et procédés de fabrication et d'utilisation de celle-ci
WO2014162945A1 (fr) * 2013-04-05 2014-10-09 パレス化学株式会社 Fluide de coupe hydrosoluble pour fil hélicoïdal à grains abrasifs fixe, procédé de découpe de lingot, et substrat pour composant électronique obtenu par ledit procédé
JP6013986B2 (ja) * 2013-06-28 2016-10-25 京セラ株式会社 太陽電池素子の製造方法
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JP2016076508A (ja) * 2014-10-02 2016-05-12 シャープ株式会社 光電変換素子および光電変換素子の製造方法
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