WO2011016682A3 - 레이저 발진소자 - Google Patents

레이저 발진소자 Download PDF

Info

Publication number
WO2011016682A3
WO2011016682A3 PCT/KR2010/005138 KR2010005138W WO2011016682A3 WO 2011016682 A3 WO2011016682 A3 WO 2011016682A3 KR 2010005138 W KR2010005138 W KR 2010005138W WO 2011016682 A3 WO2011016682 A3 WO 2011016682A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser oscillation
oscillation device
substrate
wedge
cells
Prior art date
Application number
PCT/KR2010/005138
Other languages
English (en)
French (fr)
Other versions
WO2011016682A2 (ko
Inventor
정미윤
우정원
Original Assignee
경상대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 경상대학교 산학협력단 filed Critical 경상대학교 산학협력단
Priority to US13/389,101 priority Critical patent/US8896779B2/en
Publication of WO2011016682A2 publication Critical patent/WO2011016682A2/ko
Publication of WO2011016682A3 publication Critical patent/WO2011016682A3/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1686Liquid crystal active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08081Unstable resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08086Multiple-wavelength emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Liquid Crystal Substances (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Lasers (AREA)

Abstract

레이저 발진소자가 개시된다. 제2기판은 제1기판의 상부에 구비되어 제1기판과의 사이에 쐐기형 셀(wedge cell)을 형성하며, 액정층은 쐐기형 셀에 주입되는 피치가 서로 다른 두 개 이상의 액정에 의해 형성된다. 본 발명에 따르면 일정 파장영역에서 연속적 파장 가변 레이징이 가능하다.
PCT/KR2010/005138 2009-08-05 2010-08-05 레이저 발진소자 WO2011016682A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/389,101 US8896779B2 (en) 2009-08-05 2010-08-05 Laser oscillation device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0072100 2009-08-05
KR1020090072100A KR101125195B1 (ko) 2009-08-05 2009-08-05 레이저 발진소자

Publications (2)

Publication Number Publication Date
WO2011016682A2 WO2011016682A2 (ko) 2011-02-10
WO2011016682A3 true WO2011016682A3 (ko) 2011-06-03

Family

ID=43544792

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005138 WO2011016682A2 (ko) 2009-08-05 2010-08-05 레이저 발진소자

Country Status (3)

Country Link
US (1) US8896779B2 (ko)
KR (1) KR101125195B1 (ko)
WO (1) WO2011016682A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2504003B (en) * 2012-07-11 2015-08-12 Alphamicron Inc Continuous wave directional emission liquid crystal structures and devices
KR101716730B1 (ko) * 2015-05-29 2017-03-15 경상대학교산학협력단 레이저 발진소자
WO2019013466A1 (ko) * 2017-07-11 2019-01-17 경상대학교 산학협력단 원형 편광 소자, 이를 포함하는 노치 필터 및 밴드 패스 필터
CN107885008B (zh) * 2017-09-29 2022-03-04 西安空间无线电技术研究所 一种级联液晶光学相控阵天线、成型及应用方法
WO2021132016A1 (ja) * 2019-12-27 2021-07-01 富士フイルム株式会社 画像表示装置およびarグラス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318766A (ja) * 1993-03-12 1994-11-15 Toshiba Corp レーザー発振装置および太陽電池
JP2005116980A (ja) * 2003-10-10 2005-04-28 Nippon Oil Corp レーザ発振素子
JP2005244106A (ja) * 2004-02-27 2005-09-08 Nippon Oil Corp レーザ発振素子
KR20070065973A (ko) * 2005-12-21 2007-06-27 박병주 꼬인 다이렉터 결함층을 갖는 포토닉 밴드 갭 소자 및 이를이용한 광학 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061046A (en) * 1989-12-19 1991-10-29 The University Of Rochester Gradient index liquid crystal devices and method of fabrication thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318766A (ja) * 1993-03-12 1994-11-15 Toshiba Corp レーザー発振装置および太陽電池
JP2005116980A (ja) * 2003-10-10 2005-04-28 Nippon Oil Corp レーザ発振素子
JP2005244106A (ja) * 2004-02-27 2005-09-08 Nippon Oil Corp レーザ発振素子
KR20070065973A (ko) * 2005-12-21 2007-06-27 박병주 꼬인 다이렉터 결함층을 갖는 포토닉 밴드 갭 소자 및 이를이용한 광학 장치

Also Published As

Publication number Publication date
KR20110014432A (ko) 2011-02-11
WO2011016682A2 (ko) 2011-02-10
KR101125195B1 (ko) 2012-03-19
US8896779B2 (en) 2014-11-25
US20120147288A1 (en) 2012-06-14

Similar Documents

Publication Publication Date Title
WO2011016682A3 (ko) 레이저 발진소자
DE502008000738D1 (de) Einrichtung zur Erzeugung von polarisationsverschränkten Photonen
WO2012150132A3 (de) Laserlichtquelle
WO2011025149A3 (ko) 반도체 기판 제조 방법 및 발광 소자 제조 방법
TW200712631A (en) Liquid crystal display device, method for manufacturing the same, and spacer structure of display device
TW200943476A (en) Manufacturing method of SOI substrate
TW200737337A (en) Etch methods to form anisotropic features for high aspect ratio applications
BR112014006925A2 (pt) ressoador piezelétrico que tem modos vibracionais de espessura e largura combinados
MY195790A (en) Wafer Producing Method and Wafer Producing Apparatus
WO2011034300A3 (ko) 곡면 형태의 디스플레이 패널 제조 방법
PL2646194T3 (pl) Sposób oddzielania warstwy powierzchniowej kryształu półprzewodnikowego za pomocą wiązki laserowej prostopadłej do płaszczyzny rozdziału
JP6544538B2 (ja) 脆性基板のクラックライン形成方法
WO2008118536A3 (en) Method for producing active glass nanoparticles by laser ablation
WO2011083160A3 (de) Mikroelektromechanisches halbleiterbauelement und verfahren zu seiner herstellung
WO2009135648A3 (de) Vollständig selbstjustierter oberflächenemittierender halbleiterlaser für die oberflächenmontage mit optimierten eigenschaften
WO2012178059A3 (en) Etching a laser-cut semiconductor before dicing a die attach film (daf) or other material layer
WO2010096310A3 (en) Optical control devices and methods of making
TW200619754A (en) A homeotropic alignment liquid crystal film without alignment layer and method for preparing the same
WO2011065713A3 (ko) 복합패널 및 그 제조 방법
WO2010095811A3 (ko) 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법
WO2014025068A3 (ja) 強化ガラス基板の製造方法及び強化ガラス基板
WO2011124205A3 (de) Verpackung für metall-keramik-substrate sowie verfahren zum verpacken solcher substrate
MX2013007341A (es) Lavabo lavamanos colgado en la pared para evitar la propagacion de una enfermedad infecciosa.
WO2011159737A3 (en) Systems, methods and products involving aspects of laser irradiation, cleaving, and/or bonding silicon-containing material to substrates
JP2009295952A5 (ko)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10806656

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13389101

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 10806656

Country of ref document: EP

Kind code of ref document: A2