WO2011015959A1 - Led with silicone layer and laminated remote phosphor layer - Google Patents

Led with silicone layer and laminated remote phosphor layer Download PDF

Info

Publication number
WO2011015959A1
WO2011015959A1 PCT/IB2010/053113 IB2010053113W WO2011015959A1 WO 2011015959 A1 WO2011015959 A1 WO 2011015959A1 IB 2010053113 W IB2010053113 W IB 2010053113W WO 2011015959 A1 WO2011015959 A1 WO 2011015959A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
silicone
phosphor layer
phosphor
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2010/053113
Other languages
English (en)
French (fr)
Inventor
Grigoriy Basin
Paul S. Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Lumileds LLC
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Lumileds Lighing Co LLC filed Critical Koninklijke Philips Electronics NV
Priority to BR112012002431-0A priority Critical patent/BR112012002431A2/pt
Priority to JP2012523405A priority patent/JP2013501372A/ja
Priority to RU2012108576/28A priority patent/RU2012108576A/ru
Priority to KR1020127006022A priority patent/KR20120056843A/ko
Priority to EP10740008A priority patent/EP2462634A1/en
Priority to CN2010800350575A priority patent/CN102473820A/zh
Publication of WO2011015959A1 publication Critical patent/WO2011015959A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Definitions

  • Non- remote phosphors Problems with such non- remote phosphors include: 1) the photon density is very high for high power LEDs and saturates the phosphor; 2) the LED is very hot and phosphors may react to the heat to cause darkening of the polymer binder layer (e.g., silicone) in which the phosphor particles are imbedded; 3) due to the various angles of blue light rays passing through different thicknesses of phosphors (a normal blue light ray passing through the least thickness), the color varies with viewing angle; and 4) it is difficult to create very uniform phosphor layer thicknesses and densities.
  • the polymer binder layer e.g., silicone
  • the mold 30 is then heated to cure the silicone 34, depending on the type of silicone 34 used. If the original silicone 34 was a solid (e.g., a powder or tablets) at room
  • the mold 30 is cooled to harden the silicone 34.
  • a transparent mold may be used and the silicone 34 may be cured with UV light.
  • a phosphor layer 42 may be laminated with a non-phosphor optical layer 50 that may be a pigmented color filter, a light scattering layer (e.g., silicone containing particles OfTiO 2 ), or other type of layer.
  • Fig. 11 illustrates the wafer 12 with the laminated phosphor layer 38 being brought against a mold 60 in order to form a silicone lens over the LEDs. This will protect the laminated phosphor layer 38, create any desired emission pattern, and increase light extraction by tailoring the refractive index of the silicone and the shape of the lens.
  • the mold 60 contains cavities 62 filled with silicone 64 for forming a hemispherical lens 66 (Fig. 12).

Landscapes

  • Led Device Packages (AREA)
PCT/IB2010/053113 2009-08-07 2010-07-07 Led with silicone layer and laminated remote phosphor layer Ceased WO2011015959A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
BR112012002431-0A BR112012002431A2 (pt) 2009-08-07 2010-07-07 método para fabricar um dispositivo emissor de luz e dispositivo emissor de luz
JP2012523405A JP2013501372A (ja) 2009-08-07 2010-07-07 シリコーン層及び積層された遠隔蛍光体層を備えるled
RU2012108576/28A RU2012108576A (ru) 2009-08-07 2010-07-07 Сид с силиконовым слоем и листовым отдаленным слоем люминофора
KR1020127006022A KR20120056843A (ko) 2009-08-07 2010-07-07 실리콘 층 및 라미네이트된 리모트 인광체 층을 갖는 led
EP10740008A EP2462634A1 (en) 2009-08-07 2010-07-07 Led with silicone layer and laminated remote phosphor layer
CN2010800350575A CN102473820A (zh) 2009-08-07 2010-07-07 具有硅树脂层和层叠远程磷光体层的led

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/537,909 2009-08-07
US12/537,909 US20110031516A1 (en) 2009-08-07 2009-08-07 Led with silicone layer and laminated remote phosphor layer

Publications (1)

Publication Number Publication Date
WO2011015959A1 true WO2011015959A1 (en) 2011-02-10

Family

ID=43017061

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/053113 Ceased WO2011015959A1 (en) 2009-08-07 2010-07-07 Led with silicone layer and laminated remote phosphor layer

Country Status (9)

Country Link
US (1) US20110031516A1 (https=)
EP (1) EP2462634A1 (https=)
JP (1) JP2013501372A (https=)
KR (1) KR20120056843A (https=)
CN (1) CN102473820A (https=)
BR (1) BR112012002431A2 (https=)
RU (1) RU2012108576A (https=)
TW (1) TW201123549A (https=)
WO (1) WO2011015959A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016146665A3 (de) * 2015-03-16 2016-11-03 Osram Opto Semiconductors Gmbh Lichtemittierendes bauelement und verfahren zur herstellung eines lichtemittierenden bauelements
EP3946574B1 (de) 2019-04-03 2024-12-04 JK-Holding GmbH Bestrahlungsmodul sowie vorrichtung zum bestrahlen mit medizinisch-kosmetischer strahlung

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525207B2 (en) * 2008-09-16 2013-09-03 Osram Sylvania Inc. LED package using phosphor containing elements and light source containing same
US8912023B2 (en) * 2009-04-08 2014-12-16 Ledengin, Inc. Method and system for forming LED light emitters
US8323748B2 (en) * 2009-05-15 2012-12-04 Achrolux Inc. Methods for forming uniform particle layers of phosphor material on a surface
WO2010151600A1 (en) 2009-06-27 2010-12-29 Michael Tischler High efficiency leds and led lamps
JP5379615B2 (ja) * 2009-09-09 2013-12-25 パナソニック株式会社 照明装置
JP2011082339A (ja) * 2009-10-07 2011-04-21 Nitto Denko Corp 光半導体封止用キット
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
US8384121B2 (en) 2010-06-29 2013-02-26 Cooledge Lighting Inc. Electronic devices with yielding substrates
US8771577B2 (en) * 2010-02-16 2014-07-08 Koninklijke Philips N.V. Light emitting device with molded wavelength converting layer
US8901586B2 (en) * 2010-07-12 2014-12-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
US20120081000A1 (en) * 2010-10-05 2012-04-05 Power Data Communications Co., Ltd. Led encapsulation process and shield structure made thereby
TWI445216B (zh) * 2010-11-17 2014-07-11 宏齊科技股份有限公司 具有沈積式螢光批覆層之發光二極體封裝結構及其製作方法
DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
TWI441361B (zh) * 2010-12-31 2014-06-11 英特明光能股份有限公司 發光二極體封裝結構及其製造方法
WO2012100132A1 (en) * 2011-01-21 2012-07-26 Osram Sylvania Inc. Luminescent converter and led light source containing same
US8941137B2 (en) * 2011-03-06 2015-01-27 Mordehai MARGALIT Light emitting diode package and method of manufacture
EP2689458B8 (en) * 2011-03-25 2018-08-29 Lumileds Holding B.V. Patterned uv sensitive silicone-phosphor layer over leds, and method for fabricating the same
KR20120119350A (ko) * 2011-04-21 2012-10-31 삼성전자주식회사 발광소자 모듈 및 이의 제조방법
US9029887B2 (en) 2011-04-22 2015-05-12 Micron Technology, Inc. Solid state lighting devices having improved color uniformity and associated methods
DE102011102350A1 (de) * 2011-05-24 2012-11-29 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser
US8480267B2 (en) 2011-06-28 2013-07-09 Osram Sylvania Inc. LED lighting apparatus, systems and methods of manufacture
US8585243B2 (en) 2011-06-28 2013-11-19 Osram Sylvania Inc. LED lighting apparatus, systems and methods of manufacture
WO2013008157A1 (en) 2011-07-14 2013-01-17 Koninklijke Philips Electronics N.V. Method of manufacturing a phosphor-enhanced light source
KR101294415B1 (ko) 2011-07-20 2013-08-08 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
CN102270730A (zh) * 2011-07-27 2011-12-07 晶科电子(广州)有限公司 一种无金线的led器件
US8952402B2 (en) 2011-08-26 2015-02-10 Micron Technology, Inc. Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods
US8579451B2 (en) 2011-09-15 2013-11-12 Osram Sylvania Inc. LED lamp
US9349927B2 (en) * 2011-10-18 2016-05-24 Nitto Denko Corporation Encapsulating sheet and optical semiconductor element device
US9444024B2 (en) * 2011-11-10 2016-09-13 Cree, Inc. Methods of forming optical conversion material caps
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
JP2013135084A (ja) * 2011-12-26 2013-07-08 Nitto Denko Corp 発光ダイオード装置の製造方法
RU2617880C2 (ru) 2012-02-10 2017-04-28 Конинклейке Филипс Н.В. Прессованная линза, формирующая led-модуль масштаба интегральной схемы, и способ ее изготовления
US8591076B2 (en) 2012-03-02 2013-11-26 Osram Sylvania Inc. Phosphor sheet having tunable color temperature
US9388959B2 (en) * 2012-03-02 2016-07-12 Osram Sylvania Inc. White-light emitter having a molded phosphor sheet and method of making same
JP5912712B2 (ja) * 2012-03-21 2016-04-27 スタンレー電気株式会社 照明用光学系
KR102228997B1 (ko) 2012-03-29 2021-03-18 루미리즈 홀딩 비.브이. Led 응용들을 위한 무기 바인더 내의 형광체
WO2013144919A1 (en) 2012-03-29 2013-10-03 Koninklijke Philips N.V. Phosphor in inorganic binder for led applications
US20130279194A1 (en) * 2012-04-22 2013-10-24 Liteideas, Llc Light emitting systems and related methods
CN103378260A (zh) * 2012-04-24 2013-10-30 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US8877561B2 (en) 2012-06-07 2014-11-04 Cooledge Lighting Inc. Methods of fabricating wafer-level flip chip device packages
CN104471730B (zh) 2012-07-20 2018-04-17 皇家飞利浦有限公司 发光器件和创建发光器件的方法
JP6024957B2 (ja) * 2012-09-24 2016-11-16 東芝ライテック株式会社 発光装置および照明装置
EP2917938B1 (en) 2012-11-07 2020-05-06 Lumileds Holding B.V. Wavelength converted light emitting device
US9543478B2 (en) 2012-11-07 2017-01-10 Koninklijke Philips N.V. Light emitting device including a filter and a protective layer
CN103022325B (zh) * 2012-12-24 2016-01-20 佛山市香港科技大学Led-Fpd工程技术研究开发中心 应用远距式荧光粉层的led封装结构及其制成方法
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
KR101319360B1 (ko) * 2013-03-04 2013-10-16 유버 주식회사 칩온보드형 uv led 패키지 및 그 제조방법
US8876312B2 (en) * 2013-03-05 2014-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device and apparatus with spectral converter within a casing
US8928219B2 (en) 2013-03-05 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device with spectral converter
US9470395B2 (en) 2013-03-15 2016-10-18 Abl Ip Holding Llc Optic for a light source
US10400984B2 (en) 2013-03-15 2019-09-03 Cree, Inc. LED light fixture and unitary optic member therefor
TWI527274B (zh) * 2013-04-29 2016-03-21 新世紀光電股份有限公司 發光二極體封裝結構
KR20150025231A (ko) * 2013-08-28 2015-03-10 서울반도체 주식회사 광원 모듈 및 그 제조 방법, 및 백라이트 유닛
US20150226385A1 (en) * 2014-02-11 2015-08-13 Cree, Inc. Systems and Methods for Application of Coatings Including Thixotropic Agents onto Optical Elements, and Optical Elements Having Coatings Including Thixotropic Agents
US9680067B2 (en) 2014-03-18 2017-06-13 GE Lighting Solutions, LLC Heavily phosphor loaded LED packages having higher stability
US9590148B2 (en) 2014-03-18 2017-03-07 GE Lighting Solutions, LLC Encapsulant modification in heavily phosphor loaded LED packages for improved stability
DE102014106074A1 (de) * 2014-04-30 2015-11-19 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
CN105098025A (zh) * 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
JP6077670B2 (ja) * 2014-05-09 2017-02-08 富士高分子工業株式会社 蛍光体含有識別物体及びその製造方法
KR101641205B1 (ko) * 2014-05-12 2016-07-21 주식회사 케이케이디씨 발광각도 조절이 가능한 형광필름이 구비된 led 조명 모듈 제조 방법
US9997676B2 (en) 2014-05-14 2018-06-12 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
TWI631733B (zh) * 2014-10-09 2018-08-01 新世紀光電股份有限公司 發光裝置
TWI583025B (zh) * 2014-10-09 2017-05-11 新世紀光電股份有限公司 具雙基座之薄膜式覆晶發光二極體及其製造方法
US9755110B1 (en) 2016-07-27 2017-09-05 Sharp Laboratories Of America, Inc. Substrate with topological features for steering fluidic assembly LED disks
US9985190B2 (en) 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
US9917226B1 (en) 2016-09-15 2018-03-13 Sharp Kabushiki Kaisha Substrate features for enhanced fluidic assembly of electronic devices
US10249599B2 (en) 2016-06-29 2019-04-02 eLux, Inc. Laminated printed color conversion phosphor sheets
US9892944B2 (en) 2016-06-23 2018-02-13 Sharp Kabushiki Kaisha Diodes offering asymmetric stability during fluidic assembly
CN104485411A (zh) * 2014-11-14 2015-04-01 江苏脉锐光电科技有限公司 一种远程荧光粉透镜和制造方法及其应用
DE102015001723A1 (de) 2015-02-05 2016-08-11 Sergey Dyukin Die Methode der Verbesserung der Charakteristiken von Leuchtgeräten mit einer Stirnseitenbeleuchtung des Lichtleiters, die den Luminophor beinhalten, der mit Halbleiterstrukturen beleuchtet wird.
US10984735B2 (en) * 2015-04-17 2021-04-20 Nanosys, Inc. White point uniformity in display devices
US10217914B2 (en) * 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
CN106469772B (zh) * 2015-08-18 2018-01-05 江苏诚睿达光电有限公司 一种基于滚压式的热塑性树脂光转换体贴合封装led的工艺方法
US10816165B2 (en) 2015-11-19 2020-10-27 Lsi Industries, Inc. LED luminaire assembly
KR101836253B1 (ko) 2015-12-15 2018-03-08 현대자동차 주식회사 광원 모듈 및 이를 이용한 차량용 헤드 램프
USD781482S1 (en) 2015-12-28 2017-03-14 Lsi Industries, Inc. Luminaire
EP3205584B1 (en) * 2016-02-12 2020-06-03 Goodrich Lighting Systems GmbH Exterior aircraft light and aircraft comprising the same
US9627437B1 (en) 2016-06-30 2017-04-18 Sharp Laboratories Of America, Inc. Patterned phosphors in through hole via (THV) glass
EP3491679B1 (en) 2016-07-26 2023-02-22 CreeLED, Inc. Light emitting diodes, components and related methods
DE102016115533A1 (de) * 2016-08-22 2018-02-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und Scheinwerfer mit einem optoelektronischen Halbleiterchip
US10243097B2 (en) 2016-09-09 2019-03-26 eLux Inc. Fluidic assembly using tunable suspension flow
US9837390B1 (en) 2016-11-07 2017-12-05 Corning Incorporated Systems and methods for creating fluidic assembly structures on a substrate
JP7108171B2 (ja) * 2016-12-27 2022-07-28 日亜化学工業株式会社 発光装置
US10319889B2 (en) * 2016-12-27 2019-06-11 Nichia Corporation Light emitting device
US10361349B2 (en) * 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
US11121298B2 (en) * 2018-05-25 2021-09-14 Creeled, Inc. Light-emitting diode packages with individually controllable light-emitting diode chips
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
USD902448S1 (en) 2018-08-31 2020-11-17 Cree, Inc. Light emitting diode package
US11201267B2 (en) * 2018-12-21 2021-12-14 Lumileds Llc Photoresist patterning process supporting two step phosphor-deposition to form an LED matrix array
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
USD933881S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture having heat sink
US11032976B1 (en) 2020-03-16 2021-06-15 Hgci, Inc. Light fixture for indoor grow application and components thereof
USD933872S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture
WO2021258006A1 (en) * 2020-06-18 2021-12-23 Myotek Industries Multi-injection molded optical grade silicone lens and method for producing incorporating a glow in the dark phosphor material
DE102021114070A1 (de) * 2021-05-31 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische leuchtvorrichtung
CN115411023B (zh) * 2022-08-22 2023-09-19 深圳市未林森科技有限公司 一种误差小的cob光源颜色均匀控制工艺方法
TWI857379B (zh) 2022-10-28 2024-10-01 財團法人工業技術研究院 色轉換面板與顯示器
EP4406858B1 (en) 2023-01-24 2026-04-15 Goodrich Lighting Systems GmbH & Co. KG Aircraft light, aircraft comprising an aircraft light, and method of manufacturing an aircraft light

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6274399B1 (en) 1998-06-05 2001-08-14 Lumileds Lighting, U.S. Llc Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
JP2003046134A (ja) * 2001-07-26 2003-02-14 Matsushita Electric Works Ltd 発光装置の製造方法
US6649440B1 (en) 1999-06-08 2003-11-18 Lumileds Lighting U.S., Llc Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction
US20050151147A1 (en) * 2003-12-22 2005-07-14 Kunihiro Izuno Semiconductor device and method for manufacturing the same
US20050269582A1 (en) 2004-06-03 2005-12-08 Lumileds Lighting, U.S., Llc Luminescent ceramic for a light emitting device
WO2006126119A2 (en) * 2005-05-25 2006-11-30 Philips Intellectual Property & Standards Gmbh Electroluminescence device
US20060281203A1 (en) 2005-06-09 2006-12-14 Lumileds Lighting U.S, Llc Method of removing the growth substrate of a semiconductor light emitting device
US20070012940A1 (en) * 2005-07-14 2007-01-18 Samsung Electro-Mechanics Co., Ltd. Wavelength-convertible light emitting diode package
WO2007049187A1 (en) * 2005-10-28 2007-05-03 Koninklijke Philips Electronics N.V. Laminating encapsulant film containing phosphor over leds
US20070228390A1 (en) * 2006-03-30 2007-10-04 Yasushi Hattori Semiconductor light-emitting device
WO2008104936A2 (en) * 2007-02-26 2008-09-04 Koninklijke Philips Electronics N.V. Led with phosphor tile and overmolded phosphor in lens
US20080211386A1 (en) * 2006-12-26 2008-09-04 Seoul Semiconductor Co., Ltd. Light emitting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259847A (ja) * 2004-03-10 2005-09-22 Nitto Denko Corp 光半導体装置の製造方法
TW200614548A (en) * 2004-07-09 2006-05-01 Matsushita Electric Industrial Co Ltd Light-emitting device
US7352011B2 (en) * 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
US7319246B2 (en) * 2005-06-23 2008-01-15 Lumination Llc Luminescent sheet covering for LEDs

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274399B1 (en) 1998-06-05 2001-08-14 Lumileds Lighting, U.S. Llc Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6649440B1 (en) 1999-06-08 2003-11-18 Lumileds Lighting U.S., Llc Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction
JP2003046134A (ja) * 2001-07-26 2003-02-14 Matsushita Electric Works Ltd 発光装置の製造方法
US20050151147A1 (en) * 2003-12-22 2005-07-14 Kunihiro Izuno Semiconductor device and method for manufacturing the same
US20050269582A1 (en) 2004-06-03 2005-12-08 Lumileds Lighting, U.S., Llc Luminescent ceramic for a light emitting device
WO2006126119A2 (en) * 2005-05-25 2006-11-30 Philips Intellectual Property & Standards Gmbh Electroluminescence device
US20060281203A1 (en) 2005-06-09 2006-12-14 Lumileds Lighting U.S, Llc Method of removing the growth substrate of a semiconductor light emitting device
US20070012940A1 (en) * 2005-07-14 2007-01-18 Samsung Electro-Mechanics Co., Ltd. Wavelength-convertible light emitting diode package
WO2007049187A1 (en) * 2005-10-28 2007-05-03 Koninklijke Philips Electronics N.V. Laminating encapsulant film containing phosphor over leds
US20070228390A1 (en) * 2006-03-30 2007-10-04 Yasushi Hattori Semiconductor light-emitting device
US20080211386A1 (en) * 2006-12-26 2008-09-04 Seoul Semiconductor Co., Ltd. Light emitting device
WO2008104936A2 (en) * 2007-02-26 2008-09-04 Koninklijke Philips Electronics N.V. Led with phosphor tile and overmolded phosphor in lens

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016146665A3 (de) * 2015-03-16 2016-11-03 Osram Opto Semiconductors Gmbh Lichtemittierendes bauelement und verfahren zur herstellung eines lichtemittierenden bauelements
EP3946574B1 (de) 2019-04-03 2024-12-04 JK-Holding GmbH Bestrahlungsmodul sowie vorrichtung zum bestrahlen mit medizinisch-kosmetischer strahlung

Also Published As

Publication number Publication date
RU2012108576A (ru) 2013-09-20
CN102473820A (zh) 2012-05-23
US20110031516A1 (en) 2011-02-10
BR112012002431A2 (pt) 2019-09-24
JP2013501372A (ja) 2013-01-10
EP2462634A1 (en) 2012-06-13
KR20120056843A (ko) 2012-06-04
TW201123549A (en) 2011-07-01

Similar Documents

Publication Publication Date Title
US20110031516A1 (en) Led with silicone layer and laminated remote phosphor layer
US8536608B2 (en) LED with remote phosphor layer and reflective submount
KR102163642B1 (ko) 파장-변환 재료를 포함하는 발광 다이 및 관련된 방법
CN102763231B (zh) 具有模制波长转换层的发光装置
EP1922767B1 (en) Color converted light emitting diode
WO2012023119A1 (en) Lamination process for leds
EP2115789A2 (en) Led with phosphor tile and overmolded phosphor in lens
US9444024B2 (en) Methods of forming optical conversion material caps

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080035057.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10740008

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010740008

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2012523405

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20127006022

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2012108576

Country of ref document: RU

REG Reference to national code

Ref country code: BR

Ref legal event code: B01A

Ref document number: 112012002431

Country of ref document: BR

ENP Entry into the national phase

Ref document number: 112012002431

Country of ref document: BR

Kind code of ref document: A2

Effective date: 20120202