WO2011015330A3 - Flansch für ein cvd-reaktorgehäuse, verwendung einer kamera bei einem cvd-verfahren sowie cvd-verfahren zur erzeugung von siliziumstangen - Google Patents

Flansch für ein cvd-reaktorgehäuse, verwendung einer kamera bei einem cvd-verfahren sowie cvd-verfahren zur erzeugung von siliziumstangen Download PDF

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Publication number
WO2011015330A3
WO2011015330A3 PCT/EP2010/004720 EP2010004720W WO2011015330A3 WO 2011015330 A3 WO2011015330 A3 WO 2011015330A3 EP 2010004720 W EP2010004720 W EP 2010004720W WO 2011015330 A3 WO2011015330 A3 WO 2011015330A3
Authority
WO
WIPO (PCT)
Prior art keywords
cvd method
camera
cvd
silicon rods
flange
Prior art date
Application number
PCT/EP2010/004720
Other languages
English (en)
French (fr)
Other versions
WO2011015330A2 (de
Inventor
Ralph Kienzler
Original Assignee
Graeber Engineering Consultants Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Graeber Engineering Consultants Gmbh filed Critical Graeber Engineering Consultants Gmbh
Publication of WO2011015330A2 publication Critical patent/WO2011015330A2/de
Publication of WO2011015330A3 publication Critical patent/WO2011015330A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00654—Controlling the process by measures relating to the particulate material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft einen Flansch (4) für einen CVD-Reaktor (1), an dem eine Kamera, insbesondere eine Wärmebildkamera (10), mittels einer Befestigungsvorrichtung (5) angebracht ist, wobei die Kamera so ausrichtbar ist, dass sie mindestens eine der sich in dem CVD-Reaktor (1) befindenden Siliziumstangen (15) erfasst. Außerdem betrifft die Erfindung eine Verwendung einer Kamera, insbesondere einer Wärmebildkamera (10), zur Bestimmung des Durchmessers D von Siliziumstangen (15) während des Abscheideprozesses von Reinsilizium bei der Durchführung eines CVD-Verfahrens. Darüber hinaus betrifft die Erfindung ein CVD-Verfahren zur Erzeugung von Siliziumstangen (15), bei dem die Flussmenge des zugeführten Prozessgases vom Durchmesser D der Siliziumstangen (15) abhängt.
PCT/EP2010/004720 2009-08-03 2010-08-02 Flansch für ein cvd-reaktorgehäuse, verwendung einer kamera bei einem cvd-verfahren sowie cvd-verfahren zur erzeugung von siliziumstangen WO2011015330A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009035952.4 2009-08-03
DE102009035952A DE102009035952A1 (de) 2009-08-03 2009-08-03 Flansch für ein CVD-Reaktorgehäuse, Verwendung einer Kamera bei einem CVD-Verfahren sowie CVD-Verfahren zur Erzeugung von Siliziumstangen

Publications (2)

Publication Number Publication Date
WO2011015330A2 WO2011015330A2 (de) 2011-02-10
WO2011015330A3 true WO2011015330A3 (de) 2011-10-13

Family

ID=43426298

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/004720 WO2011015330A2 (de) 2009-08-03 2010-08-02 Flansch für ein cvd-reaktorgehäuse, verwendung einer kamera bei einem cvd-verfahren sowie cvd-verfahren zur erzeugung von siliziumstangen

Country Status (2)

Country Link
DE (1) DE102009035952A1 (de)
WO (1) WO2011015330A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013206236A1 (de) * 2013-04-09 2014-10-09 Wacker Chemie Ag Gasverteiler für Siemens-Reaktor
FR3032975B1 (fr) * 2015-02-23 2017-03-10 Sidel Participations Procede de traitement par plasma de recipients, comprenant une phase d'imagerie thermique
WO2020234401A1 (de) * 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB913427A (en) * 1960-08-25 1962-12-19 Siemens Ag Improvements in or relating to methods of, and apparatus for, producing semi-conductor material
DE2518853A1 (de) * 1975-04-28 1976-11-04 Siemens Ag Reaktionsgefaess zum abscheiden von elementarem silicium
US4148931A (en) * 1976-03-08 1979-04-10 Siemens Aktiengesellschaft Process for depositing elemental silicon semiconductor material from a gas phase
DE4039007A1 (de) * 1989-12-06 1991-06-13 Hitachi Ltd Infrarottemperaturmessgeraet, eichverfahren fuer das geraet, infrarottemperaturbildmessmethode, geraet zur messung desselben, heizgeraet mit messgeraet, verfahren zur steuerung der erwaermungstemperatur, und vakuumbedampfungsgeraet mit infrarotem temperaturmessgeraet
WO2001050116A1 (en) * 2000-01-06 2001-07-12 Thermal Wave Imaging, Inc. Automated non-destructive weld evaluation method and apparatus
EP2067744A2 (de) * 2007-11-28 2009-06-10 Mitsubishi Materials Corporation Verfahren zum Herstellen von Polykristallinsilizium

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061593B (de) 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
DE102008000052A1 (de) 2008-01-14 2009-07-16 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB913427A (en) * 1960-08-25 1962-12-19 Siemens Ag Improvements in or relating to methods of, and apparatus for, producing semi-conductor material
DE2518853A1 (de) * 1975-04-28 1976-11-04 Siemens Ag Reaktionsgefaess zum abscheiden von elementarem silicium
US4148931A (en) * 1976-03-08 1979-04-10 Siemens Aktiengesellschaft Process for depositing elemental silicon semiconductor material from a gas phase
DE4039007A1 (de) * 1989-12-06 1991-06-13 Hitachi Ltd Infrarottemperaturmessgeraet, eichverfahren fuer das geraet, infrarottemperaturbildmessmethode, geraet zur messung desselben, heizgeraet mit messgeraet, verfahren zur steuerung der erwaermungstemperatur, und vakuumbedampfungsgeraet mit infrarotem temperaturmessgeraet
WO2001050116A1 (en) * 2000-01-06 2001-07-12 Thermal Wave Imaging, Inc. Automated non-destructive weld evaluation method and apparatus
EP2067744A2 (de) * 2007-11-28 2009-06-10 Mitsubishi Materials Corporation Verfahren zum Herstellen von Polykristallinsilizium

Also Published As

Publication number Publication date
DE102009035952A1 (de) 2011-02-10
WO2011015330A2 (de) 2011-02-10

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