WO2011012833A3 - Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb - Google Patents

Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb Download PDF

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Publication number
WO2011012833A3
WO2011012833A3 PCT/FR2010/051636 FR2010051636W WO2011012833A3 WO 2011012833 A3 WO2011012833 A3 WO 2011012833A3 FR 2010051636 W FR2010051636 W FR 2010051636W WO 2011012833 A3 WO2011012833 A3 WO 2011012833A3
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WO
WIPO (PCT)
Prior art keywords
electro
absorption
index
variation
optical devices
Prior art date
Application number
PCT/FR2010/051636
Other languages
English (en)
Other versions
WO2011012833A2 (fr
Inventor
François JULIEN
Anatole Lupu
Maria Tchernycheva
Laurent Nevou
Original Assignee
Universite Paris-Sud 11
Centre National De La Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite Paris-Sud 11, Centre National De La Recherche Scientifique filed Critical Universite Paris-Sud 11
Priority to JP2012522238A priority Critical patent/JP2013500505A/ja
Priority to CA2769478A priority patent/CA2769478A1/fr
Priority to US13/387,035 priority patent/US20120120478A1/en
Priority to EP10800972A priority patent/EP2460048A2/fr
Publication of WO2011012833A2 publication Critical patent/WO2011012833A2/fr
Publication of WO2011012833A3 publication Critical patent/WO2011012833A3/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

La présente invention concerne des composants électro-optiques à transition intersousbande par confinement quantique entre deux matériaux de type nitrure d'éléments de groupe III, typiquement par GaN/AIN. Elle concerne en outre des dispositifs ou systèmes incluant de tels composants, ainsi qu'un procédé de fabrication d'un tel composant. Selon l'invention, un tel composant (2) est du type comprenant au moins une région active (23) incluant au moins deux couches barrières dites extérieures (BLO, BL3) entourant une ou plusieurs structures quantiques (QWl, QW2, QW3) dopées « N », et est caractérisé en ce que ladite ou lesdites structures quantiques sont entourées chacune par deux zones barrières (BLO, BLl, BL2, BL3) non intentionnellement dopées d'une épaisseur d'au moins cinq couches monoatomiques.
PCT/FR2010/051636 2009-07-30 2010-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb WO2011012833A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012522238A JP2013500505A (ja) 2009-07-30 2010-07-30 Ｉｓｂ遷移における吸収又は率の変化に基づく電気光学デバイス
CA2769478A CA2769478A1 (fr) 2009-07-30 2010-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb
US13/387,035 US20120120478A1 (en) 2009-07-30 2010-07-30 Electro-optical devices based on the variation in the index or absorption in the isb transitions
EP10800972A EP2460048A2 (fr) 2009-07-30 2010-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0955365 2009-07-30
FR0955365A FR2948816B1 (fr) 2009-07-30 2009-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb.

Publications (2)

Publication Number Publication Date
WO2011012833A2 WO2011012833A2 (fr) 2011-02-03
WO2011012833A3 true WO2011012833A3 (fr) 2011-04-21

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PCT/FR2010/051636 WO2011012833A2 (fr) 2009-07-30 2010-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb

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US (1) US20120120478A1 (fr)
EP (1) EP2460048A2 (fr)
JP (1) JP2013500505A (fr)
CA (1) CA2769478A1 (fr)
FR (1) FR2948816B1 (fr)
WO (1) WO2011012833A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014028468A2 (fr) * 2012-08-13 2014-02-20 The Curators Of The University Of Missouri Commutateur linéaire à activation optique destiné à des limiteurs radar ou des applications de commutation haute puissance
JP5956371B2 (ja) * 2013-03-22 2016-07-27 日本電信電話株式会社 光変調導波路
CN111950346A (zh) * 2020-06-28 2020-11-17 中国电子科技网络信息安全有限公司 一种基于生成式对抗网络的行人检测数据扩充方法
JP7220837B1 (ja) * 2022-06-01 2023-02-10 三菱電機株式会社 半導体光変調器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0549132A2 (fr) * 1991-12-24 1993-06-30 AT&T Corp. Dispositif comprenant un corps semi-conducteur et des moyens pour moduler sa transparence optique
JP2001108950A (ja) * 1999-10-08 2001-04-20 Toshiba Corp 半導体光スイッチの製造方法
JP2005215395A (ja) * 2004-01-30 2005-08-11 Toshiba Corp 半導体導波型光制御素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215875A (ja) * 1985-07-12 1987-01-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH08297263A (ja) * 1995-04-26 1996-11-12 Toshiba Corp 半導体光導波素子
JP2971419B2 (ja) * 1997-07-31 1999-11-08 株式会社東芝 光スイッチ
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US7180100B2 (en) * 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0549132A2 (fr) * 1991-12-24 1993-06-30 AT&T Corp. Dispositif comprenant un corps semi-conducteur et des moyens pour moduler sa transparence optique
JP2001108950A (ja) * 1999-10-08 2001-04-20 Toshiba Corp 半導体光スイッチの製造方法
JP2005215395A (ja) * 2004-01-30 2005-08-11 Toshiba Corp 半導体導波型光制御素子

Also Published As

Publication number Publication date
FR2948816A1 (fr) 2011-02-04
FR2948816B1 (fr) 2011-08-12
EP2460048A2 (fr) 2012-06-06
CA2769478A1 (fr) 2011-02-03
US20120120478A1 (en) 2012-05-17
WO2011012833A2 (fr) 2011-02-03
JP2013500505A (ja) 2013-01-07

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