WO2010151030A2 - 두께변화 측정장치, 이를 이용한 시스템, 이를 이용한 표면 현미경, 두께변화 측정방법 및 이를 이용한 표면 이미지 획득방법 - Google Patents
두께변화 측정장치, 이를 이용한 시스템, 이를 이용한 표면 현미경, 두께변화 측정방법 및 이를 이용한 표면 이미지 획득방법 Download PDFInfo
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- WO2010151030A2 WO2010151030A2 PCT/KR2010/004044 KR2010004044W WO2010151030A2 WO 2010151030 A2 WO2010151030 A2 WO 2010151030A2 KR 2010004044 W KR2010004044 W KR 2010004044W WO 2010151030 A2 WO2010151030 A2 WO 2010151030A2
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- measurement object
- sensing unit
- reflected
- curved reflector
- point
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/24—Base structure
- G02B21/241—Devices for focusing
- G02B21/245—Devices for focusing using auxiliary sources, detectors
Definitions
- the present invention relates to a thickness change measuring apparatus, a system using the same, a surface microscope using the same, a thickness change measuring method, and a method for obtaining a surface image using the same.
- the present invention relates to a thickness change measuring apparatus capable of acquiring surface images, a system using the same, a surface microscope using the same, a method of measuring thickness variation, and a method of acquiring surface images using the same.
- the thickness change measuring device is a device for measuring the thickness of the thin film or the thickness change of the thin film.
- the thickness is monitored by measuring the amount actually deposited using a sensor using a crystal oscillator.
- This method requires frequent changes of the crystal oscillator sensor, requires accurate calibration, and, after a certain degree of deposition, causes the sensor to saturate and exhibit a non-linear response, making it difficult to monitor real-time thickness changes.
- the second method is to measure the thickness of the thin film that has already been deposited.
- various methods such as ellipsometry, white light interferometer, alpha-step, and laser triangulation system are used. There are many problems to measure. Even the thickness measurement of 1 ⁇ size encounters various difficulties such as the preparation of samples or the assumption of other variables when the thickness measurement is performed using the above method.
- optical systems such as confocal optics also require precision and precise alignment is required, which inevitably increases the price of all parts or components.
- the present invention is to solve the various problems including the above problems, a thickness change measuring device that can accurately and accurately measure the fine thickness change or obtain a surface image with a simple yet inexpensive configuration, a system using the same, using the same
- An object of the present invention is to provide a surface microscope, a method for measuring thickness change, and a method for obtaining a surface image using the same.
- the present invention includes a light source for irradiating a beam to the measurement object, a curved reflector that can reflect when the beam reflected from the measurement object is incident, and a sensing unit for sensing the beam reflected from the curved reflector, Provide a thickness change measuring device.
- the light source can be irradiated with a beam at a 45 ° angle to the measurement object.
- the lens unit further comprises a lens disposed to pass before the beam emitted from the light source reaches the measurement object, the lens unit is the curved surface after the beam emitted from the light source passes through the lens unit The beam diameter may be gradually reduced until it enters the reflector.
- the lens unit further comprises a lens disposed to pass before the beam emitted from the light source reaches the measurement object, the sensing unit after the beam emitted from the light source is reflected by the curved reflector
- the lens unit may be such that the beam diameter is changed after the beam emitted from the light source passes through the lens unit so that the beam diameter is constant until incident.
- the light emitting apparatus further includes a lens unit disposed to pass before the beam emitted from the light source reaches the measurement target, and the beam reflected from the measurement target is curvature at the beam incident point of the curved reflector.
- the lens unit may be such that the beam diameter is changed after the beam emitted from the light source passes through the lens unit.
- the light source may be a laser light source.
- the light source may include a light emitting element and a pin hole for passing a part of the light emitted from the light emitting element.
- the curved reflector may be at least a part of the reflector surface.
- the beam reflected from the measurement object before the change in the thickness of the measurement object, the beam reflected from the measurement object is reflected by the curved reflector is incident on the sensing unit and the first point sensed by the sensing unit and the thickness change of the measurement object Afterwards, the beam reflected from the measurement object may be reflected by the curved reflector to be incident on the sensing part, and the thickness change of the measurement object may be measured according to the position difference between the second points sensed by the sensing part.
- the beam reflected from one point of the measurement object is reflected from the curved reflector and incident on the sensing unit and the first point sensed by the sensing unit and the beam reflected from another point of the measurement object
- the change in the thickness of the measurement object may be measured according to the positional difference between the second point reflected by the curved reflector and incident on the sensing unit and sensed by the sensing unit.
- the beam reflected from the curved reflector may be further provided with an amplifying tube having at least two mutually opposite reflecting surfaces arranged to pass before entering the sensing unit.
- At least two mutually opposite reflecting surfaces of the amplifying tube may be parallel.
- the sensing unit may be disposed at one end of at least one reflective surface of the at least two reflective surfaces of the amplifying tube.
- the sensing unit includes a first sensing unit disposed at one end of one of the at least two reflective surfaces facing each other of the amplifying tube and a second sensing unit disposed at an end of the other reflecting surface. I can do it.
- the incident angle adjusting unit for adjusting the angle of incidence of the beam reflected from the curved reflector to the amplification tube, and the emission angle adjustment for adjusting the angle of incidence of the beam passing through the amplification tube to the sensing unit At least one of the parts may be further provided.
- it may be further provided with a light source actuator that can adjust the angle of incidence of the beam irradiated from the light source to the measurement object.
- the present invention also provides a system using any one of the above-described thickness change measuring apparatuses.
- the present invention also provides a surface microscope having any one of the above-described thickness change measuring apparatuses, and a scanner capable of changing the position of a measurement object on a plane.
- the present invention also includes the steps of (a) irradiating a beam to the measurement object before the thickness change of the measurement object, and (b) when the beam reflected from the measurement object is reflected by the curved reflector and enters the sensing unit, the sensing unit enters the sensing unit Determining a first point; (c) irradiating a beam to the measurement object after the thickness change of the measurement object; and (d) the beam reflected from the measurement object is reflected by the curved reflector and is incident on the sensing unit. Determining a thickness change of the object to be measured according to a position difference between the first point and the second point, and determining a second point incident to the sensing unit. Provide a measurement method.
- the present invention also includes the steps of (a) irradiating a beam to a point of the measurement object, and (b) when the beam reflected from the measurement object is reflected by the curved reflector and enters the sensing unit, the first incident incident to the sensing unit Determining a point; (c) irradiating a beam to another point of the measurement object; and (d) when the beam reflected from the measurement object is reflected from the curved reflector and enters the sensing unit, And determining (e) determining a thickness change of the object to be measured according to the position difference between the first point and the second point.
- step (a) and step (c) may be a step of irradiating a beam at a 45 ° angle to the measurement object.
- the step (a) and the step (c) is a step of irradiating the beam to pass through the lens unit before the beam reaches the measurement object, the lens unit the beam passes through the lens unit After that, the beam diameter may gradually decrease until it enters the curved reflector.
- step (a) and step (c) is a step of irradiating the beam through the lens unit before the beam reaches the measurement object, after the beam is reflected from the curved reflector
- the lens unit may change the beam diameter after the beam emitted from the light source passes through the lens unit such that the beam diameter is constant until incident on the sensing unit.
- step (a) and (c) is a step of irradiating the beam to pass through the lens unit before the beam reaches the measurement object, the beam reflected from the measurement object,
- the lens unit may change the beam diameter after the beam passes through the lens unit in order to converge at the center of the radius of curvature in consideration of the radius of curvature at the beam incident point of the curved reflector.
- the beam may be a laser beam.
- the curved reflector may be at least a part of the reflector surface.
- the step (b) and the step (d), the amplifying tube is at least two surfaces facing each other before the beam reflected from the curved reflector is incident on the sensing unit It can be said that it is a step which makes it pass.
- At least two mutually opposite reflecting surfaces of the amplifying tube may be parallel.
- the present invention also includes the steps of (a) irradiating a beam to a point of the measurement object, and (b) when the beam reflected from the measurement object is reflected by the curved reflector and enters the sensing unit, the incident point of the sensing unit is determined. (C) changing the position of the measurement object on a plane to change the beam incidence point on the measurement object, repeating steps (a) and (b), and (d) determining the sensing unit.
- a method of acquiring a surface image includes determining a surface image of a measurement object by using data about points at which a beam is incident.
- the thickness change measuring apparatus of the present invention made as described above, a system using the same, a surface microscope using the same, the thickness change measuring method and the surface image acquisition method using the same, it is possible to precisely and accurately measure the minute thickness change with a cheap and simple configuration Can be.
- FIG 1 and 2 are conceptual views schematically showing the measurement of the thickness change of the measurement object using the thickness change measuring apparatus according to an embodiment of the present invention.
- 3 and 4 are conceptual views schematically showing the principle of determining the thickness change.
- FIG. 5 is a schematic conceptual view illustrating a necessity of collimating a beam when using the thickness change measuring apparatus of FIGS. 1 and 2.
- FIG. 6 is a conceptual diagram schematically showing a thickness change measuring apparatus according to another embodiment of the present invention.
- FIG. 7 is a conceptual diagram schematically illustrating an apparatus for measuring thickness change according to another embodiment of the present invention.
- FIGS. 8 to 10 are schematic conceptual views for explaining a thickness change measuring apparatus according to another embodiment of the present invention.
- FIG. 11 is a conceptual diagram schematically showing a part of a thickness change measuring apparatus according to another embodiment of the present invention.
- FIG. 12 is a conceptual diagram schematically showing a portion of a thickness change measuring apparatus according to another embodiment of the present invention.
- FIG. 13 is a conceptual diagram schematically illustrating a portion of a thickness change measuring apparatus according to still another embodiment of the present invention.
- the thickness change measuring apparatus includes a light source 10, a curved reflector 20, and a sensing unit 30. Of course, if necessary, it may further include a stage 40, etc. on which the measurement object 42 may be arranged.
- the light source 10 may irradiate the beam 11 to the measurement object 42.
- Laser may be used as the light source 10, but the present invention is not limited thereto.
- the light source 10 may include a light emitting element and a pin hole through which some of the light emitted from the light emitting element passes. That is, if the beam 11 having the straightness can be irradiated to the measuring object 42, any one can be a light source 10 of the measuring apparatus according to the present embodiment.
- a beam having a diameter of several mm can emit such a beam if the diameter does not become larger than several mm even when propagated by 10 m, and can be used as the light source 10 of the measuring apparatus according to the present embodiment, and this condition is satisfied.
- the light source 10 of the measuring device may be a laser.
- the curved reflector 20 may be emitted when the beam 13 reflected from the measurement target 42 is emitted from the light source 10.
- the curved reflector 20 may have various shapes, for example, may be a reflective sphere as shown in the drawing. Hereinafter, the case where the curved reflector 20 is a reflecting sphere will be described for convenience.
- the sensing unit 30 may sense the beam 15 reflected from the curved reflector 20.
- the sensing unit 30 may include, for example, a CCD or a CMOS.
- the thickness change measuring method using the thickness change measuring apparatus according to the present embodiment is as follows.
- the beam 11 is irradiated onto the measurement object 42 on the stage 40 using the light source 10.
- the incident angle is shown to be "90 ° - ⁇ ".
- the beam 11 is reflected at the surface of the measurement object 42.
- the reflected beam 13 enters the curved reflector 20 and is reflected back from the curved reflector 20.
- the reflected beam 15 finally enters the sensing unit 30.
- the sensing unit 30 may determine the position where the reflection beam 15 is incident as the first point.
- the beam 11 is irradiated onto the measurement object 42 on the stage 40 using the light source 10 again.
- the thickness of the measurement target 42 is reduced by t. This may correspond to the case of etching the thin film.
- the beam 11 is irradiated to the measurement object 42 at the same angle of incidence as before the thickness change.
- the beam 11 is reflected at the surface of the measurement object 42.
- the reflected beam 17 enters the curved reflector 20 and is reflected back from the curved reflector 20.
- the reflected beam 19 finally enters the sensing unit 30.
- the sensing unit 30 may determine a position where the reflection beam 19 is incident as the second point.
- the distance between the reflected beam 13 and the reflected beam 17 is geometrically determined to be t / sin ⁇ .
- the distance d between the first point and the second point determined as described above corresponds to a thickness change t of the measurement object 42 at 1: 1. Therefore, the thickness change t of the measurement object 42 can be accurately measured using the distance d between the first point and the second point.
- the measurement of the thickness change (t) of the measurement object 42 can also be attempted by using a conventional measuring device, but the result is not accurate or there is a problem that a very expensive measuring device must be used to obtain accurate results. .
- the measuring device according to the present embodiment is inexpensive and has a simple measuring device, accurate measurement is possible.
- the distance d between the first point and the second point determined by the sensing unit 30 is smaller than the thickness change t of the measurement object 42. It is much larger because it is possible to measure the distance d between the first point and the second point, which is a large distance, even if the cheaper sensing part 30 is used instead of the high-precision sensing part 30. This means that the thickness change t can be accurately measured.
- the distance d between the first point and the second point corresponds 1: 1 to the thickness change t of the measurement object 42.
- the correspondence may be determined in various ways according to the situation.
- the reflection beam 13 before the thickness change of the measurement target 42 is the equator of the curved reflector 20 (reflective sphere) with reference to FIGS. 1 and 2. The case where it enters into a phase is demonstrated.
- the reflection beam 13 is at an angle of incidence of 90 ° - ⁇ to the curved reflector 20 under the above conditions.
- the reflected beam 15 is reflected by the curved reflector 20 at a reflection angle of 90 ° - ⁇ .
- 3 and 4 are conceptual views schematically showing the principle of determining the thickness change.
- the radius of the curved reflector 20 (reflective sphere) is R
- the angle between the incident point of the reflective beam 13 on the curved reflector 20 and the incident point of the reflective beam 17 at the center of the curved reflector 20 is It is defined as ⁇ .
- the distance to the point of incidence of the reflection beam 13 on the curved reflector 20 is geometrically determined by Rtan ⁇ .
- the point of incidence of the reflective beam 13 on the curved reflector 20 at the point where the plane of contact with the curved reflector 20 meets the reflective beam 17 at the point of incidence of the reflective beam 13 on the curved reflector 20 is geometrically determined to be 2t / tan ⁇ .
- the angle between the reflected beam 15 and the reflected beam 19 is geometrically determined as 2 ⁇ .
- the distance from the incident point AC of the reflective beam 13 on the curved reflector 20 to the incident point of the reflective beam 15 on the sensing unit 30 (which is approximately the reflected beam 13 on the curved reflector 20).
- L which is the shortest distance from the incident point AC of the sensor to the sensing unit 30, may be referred to as a point where the reflection beam 15 and the reflection beam 19 converge as described later. Since the center C is close to the incident point AC of the reflective beam 13 on the curved reflector 20 and can be approximated as the same, the distance between the first point and the second point on the sensing unit 30 ( d) may be referred to as L2 ⁇ .
- L2 ⁇ is the length of a circular arc having a radius L and a center angle of 2 ⁇ , which may be considered to be different from the distance d between the first point and the second point on the sensing unit 30, but as described later, 2 ⁇ . Since is a very small value, this approximation is possible.
- ⁇ is a very small value
- the center C which is a point where the reflection beam 15 and the reflection beam 19 converge, is incident on the reflection beam 13 on the curved reflector 20. Since it is very close to the point (AC) it can be seen that both are the same, it will be described below with a specific value.
- the thickness t of the measurement target is 10 nm
- the incident angle 90- ⁇ is 45 °
- the curved reflector 20 is a reflector surface having a radius R of 10 mm.
- the distance (d) between the first point and the second point determined by the sensing unit 30 under the conditions as described above to determine how much is as follows.
- the measurement unit according to the present embodiment may be used by using only a sensing unit capable of detecting a change of 4 ⁇ m, which is about 400 times that of the sensing unit, capable of sensing a change of 10 nm. That means the device can detect a change of 10 nm. This means that the measuring device according to the present embodiment can measure minute thickness changes very precisely even with a simple configuration using the inexpensive sensing unit 30.
- the value may be calculated geometrically accurately without approximation. It is geometrically clear that the thickness change t of the measurement object 42 corresponds 1: 1 with the distance d between the first point and the second point in the sensing unit 30. Therefore, when the positions of the light source 10, the measurement object 42, the curved reflector 20, and the sensing unit 30 are determined, the sensing unit 30 corresponding to the thickness change of the measurement object 42 through computer simulation or the like. It is, of course, possible to accurately and uniquely determine the distance d between the first point and the second point in.
- the thickness change t of the measurement object 42 is sensed.
- the one-to-one correspondence with the distance d between the first point and the second point in the part 30 is geometrically clear. Therefore, after setting the measuring device as shown in Figure 1, the distance (d) data between the first point and the second point in the sensing unit 30 corresponding to the thickness using a variety of samples that already know the thickness By acquiring the database and then, it is possible to accurately measure the thickness change of any measurement object 42.
- the light source 10 irradiates the beam 11 to the measurement object 42 at a 45 ° angle at all times, and reflects the reflected beam 13.
- the equator of the curved reflector 20 which is the reflecting spherical surface, it is possible to precisely measure the thickness change of the measurement object 42 without always changing the position of the sensing unit 30.
- FIG. 5 is a schematic conceptual view illustrating a necessity of collimating a beam when using the thickness change measuring apparatus of FIGS. 1 and 2.
- the beam width of the incident light (il) incident on the curved reflector 20 is constant, the reflected beam rl reflected from the curved reflector 20 is reflected.
- the beam diameter of N increases as the distance from the curved reflector 20 increases. If the beam diameter increases, it may be difficult to accurately determine the first point and the second point in the sensing unit 30 as described above.
- FIG. 6 is a conceptual diagram schematically illustrating a thickness change measuring apparatus according to another exemplary embodiment of the present invention
- the beam emitted from the light source 10 passes through the beam before reaching the measurement target 42.
- the lens unit 50 may be further provided.
- the lens unit 50 may gradually reduce the beam diameter until the beam 11 emitted from the light source 10 enters the curved reflector 20 after passing through the lens unit 50. . That is, the wavefront of the beam emitted from the light source 10 and incident on the lens unit 50 may be deformed into a concave shape.
- the beam diameter gradually increases after reflection.
- the sensing unit 30 can accurately determine the first point and the second point.
- the lens unit 50 may be referred to as a collimation lens unit.
- the lens unit 50 has a beam emitted from the light source 10 such that the beam diameter is constant until the beam emitted from the light source 10 is reflected by the curved reflector 20 and then enters the sensing unit 30. After passing through the lens unit 50, the beam diameter may gradually decrease until it enters the curved reflector. That is, in order to maintain a constant beam diameter without diverging or converging after the beam is reflected from the curved reflector 20 (except diffraction angle), the incident beam wavefront to the lens unit 50 is concave. By matching the radius of curvature of the furnace curved reflector 20, the beam passing through the lens portion 50 can have a wavefront that converges to the center of the curved reflector 20.
- the curved reflector 20 As shown in FIG. 5, when the incident light il having a constant beam diameter is incident on the curved reflector 20 (reflective sphere), the curved reflector 20 corresponding to the image of the incident light il on the curved reflector 20 is shown. If the angle at the center is ⁇ , the reflected beam rl spreads with an angle of 2 ⁇ . Accordingly, when the lens unit 50 adjusts the beam 11 emitted from the light source 10 such that the incident light il is incident on the curved reflector 20 with a convergence angle of 2 ⁇ , the reflected light 20 is reflected by the curved reflector 20.
- the reflected beam rl has a constant beam diameter on the beam path.
- the lens unit 50 adjusts the beam 11 emitted from the light source 10 to converge at an angle of 0.2 radians in the former case and at an angle of 0.02 radians in the latter case.
- the beams 15 and 19 can be made beams of approximately constant beam diameter.
- the lens unit 50 is a beam emitted from the light source 10 so that the beam diameter is constant until the beam emitted from the light source 10 is reflected by the curved reflector 20 and then incident on the sensing unit 30. After passing through the lens unit 50, it is sufficient to allow the beam diameter to change. For example, even if a beam having a constant diameter is irradiated to the measurement object 42, the beams 13 and 17 reflected from the measurement object 42 because the surface of the measurement object 42 is not uniform have a diameter of which depends on the path of the beam. It may become smaller. In this case, if the degree of the beam diameter becomes too small, even after being reflected by the curved reflector 20, the beam diameter may not become constant and the beam diameter may continue to decrease.
- the lens unit 50 increases the beam diameter when the beam emitted from the light source 10 passes through the lens unit 50, so that the sensing unit 30 is reflected after the beam is reflected from the curved reflector 20.
- the beam diameter can be made constant until it enters.
- the beams 13 and 17 reflected from the measurement object 42 can converge at the center of the radius of curvature in consideration of the radius of curvature at the point of incidence of the beams 13 and 17 of the curved reflector 20.
- the lens unit 50 is sufficient if the diameter of the beam emitted from the light source 10 can be changed.
- the lens unit 50 may be uniformly determined to change the beam diameter of the beam 11 emitted from the light source 10, or may change the degree to change the beam diameter depending on the situation. (Active lens unit). For example, it may be necessary to adjust the degree of change in the beam diameter according to the radius of curvature of the curved reflector 20 used, the measurement object 42, and the light source 10.
- the curved reflector 20 is a reflecting spherical surface in FIG. 1 and the like, as shown in FIG. 7, which is a conceptual diagram schematically illustrating a thickness change measuring apparatus according to another exemplary embodiment of the present invention
- the curved reflector 20 is sufficient if it is at least a part of a reflecting surface.
- the reflective surface may be any curved surface instead of a spherical surface. Cylinder surfaces, for example, may also be used. That is, as long as the thickness change (t, length change) of the measurement target 42 can be changed to the angle change, any one can be used as the curved reflector 20.
- FIGS. 8 to 10 are schematic conceptual views for explaining a thickness change measuring apparatus according to another embodiment of the present invention.
- the angle formed by the dashed line and the solid line is the same angle.
- the distances d1 and d2 between the first point and the second point in the sensing unit 30 are different.
- the distance d2 between the first point and the second point in the sensing unit 30 in the case of FIG. 9 is determined by the first point and the second point in the sensing unit 30 in the case of FIG. 8. It is larger than the distance d1 between two points.
- a cheaper sensing unit having a lower sensing level can be used.
- the sensing unit having the same sensing level is used in FIGS. 8 and 9, it means that the thickness change of the measurement object can be measured more accurately than in the case of FIG. 8.
- both surfaces 61 and 63 may further include an amplifying tube 60 that is reflective surfaces. At least two mutually opposite reflecting surfaces 61 and 63 of the amplifying tube 60 may be parallel to each other. Of course, by making the at least two mutually opposite reflecting surfaces 61 and 63 of the amplifying tube 60 not parallel, the distance between the first point and the second point in the sensing unit 30 may be further increased. Of course, various modifications are possible.
- the first and second points in the sensing unit 30 by lengthening the beam path from the spherical reflector to the sensing unit 30 after being reflected by the spherical reflector without an amplifying tube
- the distance d2 between them can be made large.
- FIG. 9 and FIG. 10 shows that the sizes S11 and S12 of the apparatus in FIG. 9 using the amplification tube 60 are smaller than the sizes S21 and S22 of the apparatus in FIG. 10 without the amplifying tube. Able to know.
- the size of the thickness change measuring apparatus can be significantly reduced.
- the sensing unit 30 is an amplifying tube 60 as shown in FIG. 11, which is a conceptual diagram schematically showing a part of the thickness change measuring apparatus according to another embodiment of the present invention.
- the first sensing unit 31 disposed at the end of one of the reflecting surfaces 61 and the second sensing unit 32 disposed at the other reflecting surface 63 at the end of at least two mutually opposite reflective surfaces 61 and 63 ) May be included.
- the sensing unit 30 may have at least two reflective surfaces facing each other of the amplifying tube 60. It may be disposed at one end of the reflective surface 61 of the one (61, 63).
- the light source 10 has been described as irradiating the beam 11 to the measurement object 42 at a constant incidence angle, but the present invention is not limited thereto, and the measurement object of the beam 11 irradiated from the light source 10 is described.
- a light source actuator (not shown) that can adjust the angle of incidence to 42 may be further provided as necessary.
- the curved reflector 20 of the stage 40 on which the measurement target 42 may be disposed.
- a stage actuator (not shown) which can change a position may further be provided as needed.
- Figure 13 which is a conceptual diagram schematically showing a part of the measuring apparatus according to another embodiment of the present invention, may further include an incident angle control unit 65 and the exit angle control unit 67.
- the incident angle adjusting unit 65 may adjust the incident angle of the beam reflected from the curved reflector 20 to the amplifying tube 60.
- the emission angle adjusting unit 67 may adjust an angle of incidence of the beam passing through the amplifying tube 60 into the sensing unit 30.
- the distance d2 between the first point and the second point in the sensing unit 30 may be increased by using the amplifying tube 60.
- the incident angle adjusting unit 65 may be formed at the curved reflector 20.
- the exit angle adjusting unit 67 also adjusts the angle of incidence of the beam passing through the amplifying tube 60 to the sensing unit 30, thereby finally providing a distance d2 between the first point and the second point in the sensing unit 30. ) Can be increased dramatically.
- the present invention is not limited thereto, and various modifications may be made, including at least one of the incident angle control unit 65 and the exit angle control unit 67.
- the incident angle control unit 65 and / or the exit angle control unit 67 may be used not only for increasing the distance d2 between the first point and the second point in the sensing unit 30 but also for other purposes. It may be.
- the incident angle adjusting unit 65 may be used for the purpose of changing the beam path so that the beam reflected from the curved reflector 20 properly enters the amplifying tube 60, and the emission angle adjusting unit 67 may amplify the beam angle.
- the beam passing through the tube 60 may be used for the purpose of changing the beam path so that the beam 30 is properly incident on the sensing unit 30.
- the embodiments have been described in which the thickness of the measurement object is reduced as in FIGS. 1 and 2. This may be referred to as the case of reducing the thickness of the measurement object, for example, by etching.
- the present invention is not limited thereto, and of course, the present invention can also be applied to a case where the thickness of the measurement object is increased.
- the position of the reflection beam incident on the sensing unit 30 after the thickness change of the measurement object may be positioned on the opposite side of the reflection beam 19 of FIG. 2 with respect to the reflection beam 15.
- the thickness change measuring device or the thickness change measuring method means that the thickness change can be measured, as well as the thickness of the thin film can be measured. For example, if the first point is identified in the same manner as in FIG. 1 before the thin film is deposited, and the second point is confirmed in the same manner as in FIG. 2 after the thin film is deposited, the deposited thin film is eventually deposited. It can be to measure the thickness of.
- the thickness change measuring apparatus or the thickness change measuring method of the present invention can be modified and used in various ways.
- An example of a system using a thickness change measuring apparatus may be a system for measuring thickness uniformity of a formed thin film. That is, the beam reflected from one point of the measurement object 42 is reflected by the curved reflector 20 and enters the sensing unit 30 to sense the first point sensed by the sensing unit 30 and the measurement object 42. The beam reflected at another point is reflected by the curved reflector 20 and enters the sensing unit 30 to measure the thickness change of the measuring object 42 according to the position difference of the second point sensed by the sensing unit 30. You may.
- a system using a thickness change measuring device is a surface microscope. That is, when using a scanner (eg, xy scanner) that can change the position of the measurement object 42 on the plane, the position of the measurement object 42 is changed on the plane to change the beam incident point on the measurement object 42.
- the incident point change data of the sensing unit 30 is secured, the surface image of the measurement object 42 may be determined using the data.
- a surface image acquisition method using the same.
- a thickness change measuring device capable of precisely and accurately measuring a small thickness change or obtaining a surface image, a system using the same, a surface microscope using the same, a thickness change measuring method, and a surface image obtaining method using the same.
Abstract
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Claims (28)
- 측정대상물에 빔을 조사할 수 있는 광원;측정대상물에서 반사된 빔이 입사할 시 반사시킬 수 있는 곡면 반사체; 및상기 곡면 반사체에서 반사된 빔을 센싱할 수 있는 센싱부;를 구비하는, 두께변화 측정장치.
- 제1항에 있어서,상기 광원은 측정대상물에 45° 각도로 빔을 조사할 수 있는, 두께변화 측정장치.
- 제1항에 있어서,상기 광원에서 방출된 빔이 측정대상물에 도달하기 전 통과하도록 배치된 렌즈부를 더 구비하며, 상기 렌즈부는 상기 광원에서 방출된 빔이 상기 렌즈부를 통과한 이후 상기 곡면 반사체에 입사할 때까지, 빔직경이 점진적으로 작아지도록 하는, 두께변화 측정장치.
- 제1항에 있어서,상기 광원에서 방출된 빔이 측정대상물에 도달하기 전 통과하도록 배치된 렌즈부를 더 구비하며, 상기 광원에서 방출된 빔이 상기 곡면 반사체에서 반사된 이후 상기 센싱부에 입사할 때까지 빔직경이 일정하도록, 상기 렌즈부는 상기 광원에서 방출된 빔이 상기 렌즈부를 통과한 이후 빔직경이 변화되도록 하는, 두께변화 측정장치.
- 제1항에 있어서,상기 광원에서 방출된 빔이 측정대상물에 도달하기 전 통과하도록 배치된 렌즈부를 더 구비하며, 측정대상물에서 반사된 빔이, 상기 곡면 반사체의 빔 입사지점에서의 곡률반경을 고려하여 해당 곡률반경의 중심에서 수렴할 수 있도록, 상기 렌즈부는 상기 광원에서 방출된 빔이 상기 렌즈부를 통과한 이후 빔직경이 변화되도록 하는, 두께변화 측정장치.
- 제1항에 있어서,상기 광원은 레이저광원인, 두께변화 측정장치.
- 제1항에 있어서,상기 광원은 발광소자와 상기 발광소자에서 방출되는 광 중 일부를 통과시키는 핀홀(pin hole)을 포함하는, 두께변화 측정장치.
- 제1항에 있어서,상기 곡면 반사체는 반사구면의 적어도 일부인, 두께변화 측정장치.
- 제1항에 있어서,측정대상물의 두께변화 전, 측정대상물에서 반사된 빔이 상기 곡면 반사체에서 반사되어 상기 센싱부에 입사해 상기 센싱부가 센싱한 제1지점과, 측정대상물의 두께변화 후, 측정대상물에서 반사된 빔이 상기 곡면 반사체에서 반사되어 상기 센싱부에 입사해 상기 센싱부가 센싱한 제2지점의 위치 차이에 따라, 측정대상물의 두께변화를 측정하는, 두께변화 측정장치.
- 제1항에 있어서,측정대상물의 일 지점에서 반사된 빔이 상기 곡면 반사체에서 반사되어 상기 센싱부에 입사해 상기 센싱부가 센싱한 제1지점과, 측정대상물의 다른 지점에서 반사된 빔이 상기 곡면 반사체에서 반사되어 상기 센싱부에 입사해 상기 센싱부가 센싱한 제2지점의 위치 차이에 따라, 측정대상물의 두께변화를 측정하는, 두께변화 측정장치.
- 제1항에 있어서,상기 곡면 반사체에서 반사된 빔이 상기 센싱부에 입사하기 전 통과하도록 배치된, 상호 대향된 적어도 두 면들이 반사면들인 증폭관을 더 구비하는, 두께변화 측정장치.
- 제11항에 있어서,상기 증폭관의 상호 대향된 적어도 두 반사면들은 평행한, 두께변화 측정장치.
- 제11항에 있어서,상기 센싱부는 상기 증폭관의 상호 대향된 적어도 두 반사면들 중 어느 한 반사면 끝단에 배치된, 두께변화 측정장치.
- 제11항에 있어서,상기 센싱부는 상기 증폭관의 상호 대향된 적어도 두 반사면들 중 어느 한 반사면 끝단에 배치된 제1센싱부와 다른 반사면 끝단에 배치된 제2센싱부를 포함하는, 두께변화 측정장치.
- 제11항에 있어서,상기 곡면 반사체에서 반사된 빔의 상기 증폭관으로의 입사각을 조절하는 입사각조절부와, 상기 증폭관을 통과한 빔의 상기 센싱부로의 입사각을 조절하는 출사각조절부 중 적어도 어느 하나를 더 구비하는, 두께변화 측정장치.
- 제1항에 있어서,상기 광원에서 조사된 빔의 측정대상물에의 입사각을 조절할 수 있는 광원 액츄에이터를 더 구비하는, 두께변화 측정장치.
- 제1항에 있어서,측정대상물이 배치될 수 있는 스테이지와, 상기 스테이지의 상기 곡면 반사체에 대한 위치를 변화시킬 수 있는 스테이지 액츄에이터를 더 구비하는, 두께변화 측정장치.
- 제1항 내지 제17항 중 어느 한 항의 두께변화 측정장치를 이용한 시스템.
- 제1항 내지 제8항 및 제11항 내지 제16항 중 어느 한 항의 두께변화 측정장치; 및측정대상물의 위치를 평면 상에서 변화시킬 수 있는 스캐너;를 구비하는, 표면 현미경.
- (a) 측정대상물의 두께변화 전 측정대상물에 빔을 조사하는 단계;(b) 측정대상물에서 반사된 빔이 곡면 반사체에서 반사되어 센싱부에 입사하면, 상기 센싱부에 입사한 제1지점을 확정하는 단계;(c) 측정대상물의 두께변화 후 측정대상물에 빔을 조사하는 단계;(d) 측정대상물에서 반사된 빔이 상기 곡면 반사체에서 반사되어 상기 센싱부에 입사하면, 상기 센싱부에 입사한 제2지점을 확정하는 단계; 및(e) 상기 제1지점과 상기 제2지점의 위치 차이에 따라, 측정대상물의 두께변화를 결정하는 단계;를 포함하는, 두께변화 측정방법.
- (a) 측정대상물의 일 지점에 빔을 조사하는 단계;(b) 측정대상물에서 반사된 빔이 곡면 반사체에서 반사되어 센싱부에 입사하면, 상기 센싱부에 입사한 제1지점을 확정하는 단계;(c) 측정대상물의 다른 지점에 빔을 조사하는 단계;(d) 측정대상물에서 반사된 빔이 상기 곡면 반사체에서 반사되어 상기 센싱부에 입사하면, 상기 센싱부에 입사한 제2지점을 확정하는 단계; 및(e) 상기 제1지점과 상기 제2지점의 위치 차이에 따라, 측정대상물의 두께변화를 결정하는 단계;를 포함하는, 두께변화 측정방법.
- 제20항 또는 제21항에 있어서,상기 (a) 단계 및 상기 (c) 단계는 측정대상물에 45° 각도로 빔을 조사하는 단계인, 두께변화 측정방법.
- 제20항 또는 제21항에 있어서,상기 (a) 단계 및 상기 (c) 단계는, 빔이 측정대상물에 도달하기 전에 렌즈부를 통과하도록 빔을 조사하는 단계이며, 상기 렌즈부는 빔이 상기 렌즈부를 통과한 이후 상기 곡면 반사체에 입사할 때까지, 빔직경이 점진적으로 작아지도록 하는, 두께변화 측정방법.
- 제20항 또는 제21항에 있어서,상기 (a) 단계 및 상기 (c) 단계는, 빔이 측정대상물에 도달하기 전에 렌즈부를 통과하도록 빔을 조사하는 단계이며, 빔이 상기 곡면 반사체에서 반사된 이후 상기 센싱부에 입사할 때까지 빔직경이 일정하도록, 상기 렌즈부는 빔이 상기 렌즈부를 통과한 이후 빔직경이 변화되도록 하는, 두께변화 측정방법.
- 제20항 또는 제21항에 있어서,상기 (a) 단계 및 상기 (c) 단계는, 빔이 측정대상물에 도달하기 전에 렌즈부를 통과하도록 빔을 조사하는 단계이며, 측정대상물에서 반사된 빔이, 상기 곡면 반사체의 빔 입사지점에서의 곡률반경을 고려하여 해당 곡률반경의 중심에서 수렴할 수 있도록, 상기 렌즈부는 빔이 상기 렌즈부를 통과한 이후 빔직경이 변화되도록 하는, 두께변화 측정방법.
- 제20항 또는 제21항에 있어서,상기 곡면 반사체는 반사구면의 적어도 일부인, 두께변화 측정방법.
- 제20항 또는 제21항에 있어서,상기 (b) 단계 및 상기 (d) 단계는, 상기 곡면 반사체에서 반사된 빔이 상기 센싱부에 입사하기 전, 상호 대향된 적어도 두 면들이 반사면들인 증폭관을 통과하도록 하는 단계인, 두께변화 측정방법.
- (a) 측정대상물의 일 지점에 빔을 조사하는 단계;(b) 측정대상물에서 반사된 빔이 곡면 반사체에서 반사되어 센싱부에 입사하면, 상기 센싱부에 입사한 지점을 확정하는 단계;(c) 측정대상물의 위치를 평면 상에서 변화시켜 측정대상물 상의 빔 입사지점을 변화시키며 상기 (a) 단계와 상기 (b) 단계를 반복하는 단계; 및(d) 상기 센싱부가 확정한 빔이 입사한 지점들에 대한 데이터를 이용하여 측정대상물의 표면 이미지를 확정하는 단계;를 포함하는, 표면 이미지 획득방법.
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CN201080038383.1A CN102625902B (zh) | 2009-06-23 | 2010-06-22 | 用于测量厚度变化的设备、使用该设备的系统、使用该设备的形貌显微镜、测量厚度变化的方法、以及使用该测量方法获取形貌图像的方法 |
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