WO2010137793A1 - Dispositif de cuisson pour préparer un capteur à couche mince magnétique et procédé associé - Google Patents

Dispositif de cuisson pour préparer un capteur à couche mince magnétique et procédé associé Download PDF

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Publication number
WO2010137793A1
WO2010137793A1 PCT/KR2010/001390 KR2010001390W WO2010137793A1 WO 2010137793 A1 WO2010137793 A1 WO 2010137793A1 KR 2010001390 W KR2010001390 W KR 2010001390W WO 2010137793 A1 WO2010137793 A1 WO 2010137793A1
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WO
WIPO (PCT)
Prior art keywords
chamber
temperature
wafer
baking
heater
Prior art date
Application number
PCT/KR2010/001390
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English (en)
Korean (ko)
Inventor
김종호
신동문
김기현
Original Assignee
(주)노바마그네틱스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by (주)노바마그네틱스 filed Critical (주)노바마그네틱스
Publication of WO2010137793A1 publication Critical patent/WO2010137793A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Definitions

  • the present invention heats the wafer top by high temperature air convection heated by a heater located at the bottom of the chamber by using a convection chamber that can insulate the outside, and the wafer is fixed on a specially manufactured jig (Jig) to top the wafer.
  • a magnetic thin film sensor is manufactured by designing and laying out an electronic circuit to be manufactured, then fabricating it as a mask, and performing image transfer to a prepared wafer. This is becoming increasingly integrated by the development of various microfabrication techniques. Photolithography, which makes a designed circuit into a mask and transfers an image of the mask onto a wafer, is important in that it enables the shape of the circuit.
  • Photolithography process includes wafer cleaning, photoresist coat, softbake, alignment and exposure, development, hardbaking, etching and plating (Plating), photoresist strip (Strip) and wafer cleaning process, and the baking process is carried out for the purpose of improving the adhesion, chemical resistance and durability of the photoresist film by volatilizing the organic solvent contained in the photoresist film.
  • This requires precise process conditions in that the electrical characteristics of the device are improved by adjusting the conditions of the photoresist film to facilitate the development and etching process, which is a subsequent process of the baking process, to form an accurate pattern on the material to which the image is to be transferred. do.
  • Baking is largely divided into soft baking and hard baking.
  • soft baking is applied to a wafer or a mask substrate, and then the solvent of the photosensitive film is thermally weakly heated to volatilize to some extent, thereby adhering to adhesion and chemical resistance of the photosensitive film.
  • durability to improve the durability, and in particular, baking conditions are closely related to the process line width and thickness loss of the photoresist film during the exposure and development processes. Also, a reproducible shape can be obtained.
  • hard baking is performed at a temperature of about 40 to 60 ° C. higher than the normal soft baking temperature after developing the photoresist film, which removes excess solvent and water remaining in the photoresist film itself after developing to improve adhesion between the photoresist film and the wafer surface.
  • hard baking is performed at a temperature of about 40 to 60 ° C. higher than the normal soft baking temperature after developing the photoresist film, which removes excess solvent and water remaining in the photoresist film itself after developing to improve adhesion between the photoresist film and the wafer surface.
  • a conventional baking process is a method in which a wafer is placed on an upper surface of a baking plate, and then the baking plate is heated to a temperature set by a heater installed at the bottom of the baking plate, and the baking plate conducts heat to the wafer in contact with the heat. .
  • FIG. 1 is a schematic cross-sectional view for explaining a conventional baking apparatus.
  • a circular baking plate 12 in which a wafer W coated with a photosensitive film is placed is provided in a chamber 10 for performing a baking process, and the baking plate 12 includes a plurality of baking plates 12.
  • the transfer pin 14 penetrates the baking plate 12 and is installed in a driving device (not shown) below the chamber 10. The transfer pin 14 is moved up and down by the driving device, and an upper portion of the transfer pin 14 has a stroke distance up to a predetermined distance in the baking plate 12 in the baking plate 12.
  • the transfer pin 14 moves downward.
  • the wafer W is seated on the baking plate 12.
  • the baking plate 12 When the wafer W is seated on the baking plate 12 as described above, the baking plate 12 is heated to a predetermined temperature by the heater 16 installed under the baking plate 12. Heat of the heated baking plate 12 is transferred to the wafer W so that the wafer W is heated to cure the photosensitive film applied on the wafer W.
  • the baking plate is heated by a heater, and the high temperature of the heated baking plate is transferred to the wafer so that the wafer is heated. Occurs.
  • the temperature difference makes the thickness of the photoresist film to be cured generally not uniform, and serves as a defect factor in subsequent processes.
  • the back surface of the wafer is contaminated at the contact of the baking plate and the wafer, the high-temperature baking plate has a problem that can cause a burn to the operator.
  • the present invention was conceived to solve the above problems, using a convection chamber that can insulate the outside to heat the wafer top by high temperature air convection heated by a heater located at the bottom of the chamber, the wafer is specifically By fixing on the fabricated jigs and uniformly heating not only the top of the wafer but also the bottom thereof, the present invention provides a baking apparatus and method for manufacturing a magnetic thin film sensor that enhances the adhesion between the photoresist film and the wafer surface as well as the durability of the photoresist film itself. Its purpose is to.
  • Another object of the present invention is to control the heater installed in the lower end of the chamber in real time by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor, by maintaining the air temperature inside the chamber uniformly coated on the wafer
  • the present invention provides a baking apparatus and method for manufacturing a magnetic thin film sensor that uniformly cures a magnetic thin film sensor to improve yield.
  • another object of the present invention is to provide a baking apparatus and method for manufacturing a magnetic thin film sensor which does not cause a worker to be burned by a high temperature baking plate because a baking plate used in a conventional apparatus is not required.
  • another object of the present invention is to manufacture a magnetic thin film sensor that can increase the thermal conductivity by laminating the surface of the mold as well as maximizing the contact area with the wafer to heat the wafer at a uniform temperature.
  • Baking apparatus for manufacturing a magnetic thin film sensor according to a preferred embodiment of the present invention for achieving the above object is installed in the lower end of the chamber inside the baking process is performed, a plurality of heaters for heating the air in the chamber;
  • a temperature sensor installed inside the chamber and sensing a temperature inside the chamber;
  • a control unit connected to the temperature sensor and configured to analyze a temperature signal detected by the temperature sensor and to control power supplied to the heater to maintain a uniform temperature in the chamber;
  • a power supply device connected to the control unit and supplying power to the heater according to a control signal output from the control unit;
  • control unit is connected to the temperature sensor, the input device for converting the temperature signal inside the chamber detected by the temperature sensor in the analog signal to a digital signal;
  • a control device connected to the input device and outputting a control signal for controlling power supplied to the heater by analyzing a temperature signal converted by the input device; It is connected to the control device, characterized in that it comprises an output device for converting the control signal output from the control device into a digital signal to an analog signal.
  • the height of the plate is characterized in that the frame placed on the upper surface of the plate is installed so as to be located in the center of the interior of the baking chamber.
  • the mold is characterized in that located in the center of the inside of the cubic chamber to equalize the temperature of the air delivered to the wafer (W).
  • a baking method for manufacturing a magnetic thin film sensor for achieving the above object includes a wafer insertion step of mounting a wafer fixed to the frame on a plate for supporting a wafer installed in the chamber; An air heating step in the chamber for supplying power to a heater installed at each corner of the chamber to increase the temperature of the air in the chamber; A baking progress step by convection in which the temperature of the air in the chamber is heated to a predetermined temperature to cause curing of the photosensitive film applied to the wafer; Determining an advancing time of the baking process; When the progress time of the baking process is checked and the preset time is reached, the power supply to the heater is stopped, the baking process is terminated after the wafer is removed, and the progress of the baking process does not reach the preset time.
  • control unit determines the temperature distribution inside the chamber by the temperature signal detected by the temperature sensor and controls the power supplied to the heater.
  • Baking apparatus and method for manufacturing a magnetic thin film sensor according to the present invention has the following effects.
  • the present invention heats the upper part of the wafer by a high temperature air convection heated by a heater located at the bottom of the chamber using a convection chamber that can insulate the outside, and the wafer is fixed on a specially manufactured jig
  • a heater located at the bottom of the chamber using a convection chamber that can insulate the outside
  • the wafer is fixed on a specially manufactured jig
  • the present invention is to control the heater installed in the lower end of the chamber in real time by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor, thereby maintaining a uniform air temperature in the chamber to the photosensitive film applied on the wafer By uniformly curing to improve the production yield of the magnetic thin film sensor.
  • the present invention does not require the baking plate used in the conventional apparatus, so that there is no risk of the worker being burned by the high heat baking plate.
  • the present invention can maximize the contact area with the wafer in order to heat the wafer to a uniform temperature as well as to raise the thermal conductivity by lapping the surface of the mold.
  • FIG. 1 is a schematic cross-sectional view for explaining a conventional baking apparatus.
  • Figure 2 is an interior view of a baking chamber for explaining the baking apparatus according to an embodiment of the present invention.
  • Figure 3 is a block diagram for explaining the operation of the baking apparatus according to an embodiment of the present invention.
  • FIG. 4 is a flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
  • FIG. 2 is an internal view of a baking chamber for explaining a baking apparatus according to an embodiment of the present invention
  • Figure 3 is a block diagram for explaining the operation of the baking apparatus according to an embodiment of the present invention
  • Figure 4 is A flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
  • the baking apparatus for manufacturing a magnetic thin film sensor is a chamber 100, a heater 102, a temperature sensor 104, a plate 106, The frame 108, the power supply 118, the control unit 110, the input device 112, the output device 116, the control device 114 and the like.
  • FIG. 2 is an internal view of a baking chamber for explaining a baking apparatus according to an embodiment of the present invention, as shown in Figure 2, is provided with a cubic baking chamber 100 for performing a baking process, At the lower end of the chamber 100, a heater 102 for heating air in the chamber 100 and a temperature sensor 104 for detecting an internal temperature are installed. At this time, the temperature sensor 104 is installed so as not to be directly affected by the heat generated from the heater (102). In the middle of the inside of the baking chamber 100, a plate 106 for supporting the mold 108 is installed and the mold 108 is placed on the upper surface.
  • the mold 108 is positioned in the center of the cubic chamber 100, and the temperature of the heater 102 installed at the lower end is controlled by It can harden
  • the baking apparatus includes a heater 102 for heating air in a baking chamber, and baking.
  • a temperature sensor 104 for sensing a temperature inside the chamber, a power supply 118 for supplying power to the heater 102, and a heater 102 according to a temperature signal of the temperature sensor 104.
  • a control unit 110 for controlling the power supplied.
  • the controller 110 includes an input device 112 connected to a temperature sensor 104, an output device 116 connected to the power supply 118, and the input device 112 and an output device 116. It includes a control device 114 connected to.
  • the air in the chamber is heated to a predetermined temperature by the heaters 102 installed at the bottom of the baking chamber, and the baking process is performed.
  • the temperature sensor 104 installed inside the chamber continuously detects the temperature inside the chamber during the baking process, and the input device 112 connected to the temperature sensor 104 is the temperature sensor 104. Converts the temperature signal detected by the analog signal into a digital signal.
  • the controller 114 connected to the input device 112 determines the temperature distribution state inside the chamber by using the temperature signal converted from the input device 112 as input data, and controls the power supplied to the heater 102.
  • the temperature control loop using the feedback control concept as described above is continuously performed while the baking process is performed to maintain a constant temperature inside the chamber where the baking process is performed.
  • the temperature inside the chamber can be kept uniform at a predetermined temperature, and the air in the chamber heated evenly transfers uniform heat to the wafer, and uniformly cures the photosensitive film applied to the wafer.
  • the baking plate used in the conventional apparatus since the baking plate used in the conventional apparatus is not necessary, there is no risk of the worker being burned by the high temperature baking plate.
  • the mold on which the wafer is raised maximizes the contact area with the wafer to heat the wafer to a uniform temperature.
  • FIG. 4 is a flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
  • a wafer W in which a wafer fixed to a mold is installed in a chamber is illustrated. It is placed on the plate for support (S 200). Thereafter, power is supplied to heaters installed at each corner of the inside of the chamber to increase the temperature of the air in the chamber (S202). Then, the temperature of the air in the chamber is heated to a predetermined temperature to cure the photosensitive film applied to the wafer (S204). Thereafter, when the progress time of the baking process is checked to reach a predetermined time (S206), the power supplied to the heater is stopped (S214), and when the wafer is removed, the baking process is terminated (S216).
  • the air temperature inside the chamber is sensed by the temperature sensor installed in the chamber (S 208), and the controller detects the temperature
  • the temperature distribution in the chamber is determined by the temperature signal, and a control signal for controlling the power supplied to the heater is output (S 210).
  • the temperature inside the chamber is uniformly maintained by controlling the power supplied to the heaters installed at the corners according to the control signal of the controller (S 212).
  • the photosensitive film applied to the surface of the wafer can be uniformly cured.
  • the present invention can be used for manufacturing all thin film sensors using photoresist, manufacturing semiconductor equipment, and the like.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif de cuisson pour préparer un capteur à couche mince magnétique et un procédé associé, selon lequel une partie supérieure de plaquette est chauffée par convection d'air haute température, qui est chauffé par un élément chauffant positionné au niveau d'une extrémité inférieure d'une chambre de convection pouvant être isolée depuis l'extérieur, la plaquette étant fixée sur un châssis spécifiquement préparé (gabarit) de sorte que la partie inférieure ainsi que la partie supérieure puissent être chauffées uniformément, ce qui permet de favoriser la durabilité d'un film photosensible ainsi que la force d'adhérence entre le film photosensible et les surfaces de la plaquette, l'élément chauffant monté au niveau de la partie d'extrémité inférieure de la chambre étant commandé en temps réel par une unité de commande qui commande la température interne d'une chambre de cuisson en fonction d'un signal émis à partir d'un capteur de température, de façon que la température de l'air dans la chambre puisse être maintenue uniformément pour cuire le film photosensible dopé sur la plaquette uniformément, ce qui permet d'améliorer le rendement du capteur à couche mince magnétique. Les ouvriers sont ainsi protégés contre les brûlures provoquées par une plaque de cuisson à haute température étant donné que la plaque de cuisson utilisée dans des dispositifs classiques n'est plus nécessaire, et le châssis pour fixer la plaquette présente une zone de contact avec la plaquette maximisée pour chauffer ladite plaquette à une température uniforme et une conductivité thermique améliorée étant donné que les surfaces du châssis sont chevauchantes.
PCT/KR2010/001390 2009-05-25 2010-03-05 Dispositif de cuisson pour préparer un capteur à couche mince magnétique et procédé associé WO2010137793A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0045307 2009-05-25
KR1020090045307A KR20100126893A (ko) 2009-05-25 2009-05-25 자기박막센서 제조를 위한 베이킹 장치 및 방법

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WO2010137793A1 true WO2010137793A1 (fr) 2010-12-02

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108327138A (zh) * 2018-03-22 2018-07-27 北京创昱科技有限公司 一种太阳能薄膜烘烤腔室
CN113436994A (zh) * 2021-06-21 2021-09-24 江苏中科智芯集成科技有限公司 一种精密控制的固化处理介电材料的半导体装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020080593A (ko) * 2001-04-16 2002-10-26 삼성전자 주식회사 반도체 장치 제조를 위한 베이킹 장치
US20060097740A1 (en) * 2004-11-05 2006-05-11 Solid State Measurements, Inc. In-situ wafer and probe desorption using closed loop heating
KR20070121095A (ko) * 2006-06-21 2007-12-27 삼성전자주식회사 반도체 소자 제조용 자체보정 베이킹 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020080593A (ko) * 2001-04-16 2002-10-26 삼성전자 주식회사 반도체 장치 제조를 위한 베이킹 장치
US20060097740A1 (en) * 2004-11-05 2006-05-11 Solid State Measurements, Inc. In-situ wafer and probe desorption using closed loop heating
KR20070121095A (ko) * 2006-06-21 2007-12-27 삼성전자주식회사 반도체 소자 제조용 자체보정 베이킹 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108327138A (zh) * 2018-03-22 2018-07-27 北京创昱科技有限公司 一种太阳能薄膜烘烤腔室
CN113436994A (zh) * 2021-06-21 2021-09-24 江苏中科智芯集成科技有限公司 一种精密控制的固化处理介电材料的半导体装置及方法
CN113436994B (zh) * 2021-06-21 2024-02-09 江苏中科智芯集成科技有限公司 一种精密控制的固化处理介电材料的半导体装置及方法

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