WO2010137793A1 - Baking device for preparing magnetic thin film sensor and method thereof - Google Patents

Baking device for preparing magnetic thin film sensor and method thereof Download PDF

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Publication number
WO2010137793A1
WO2010137793A1 PCT/KR2010/001390 KR2010001390W WO2010137793A1 WO 2010137793 A1 WO2010137793 A1 WO 2010137793A1 KR 2010001390 W KR2010001390 W KR 2010001390W WO 2010137793 A1 WO2010137793 A1 WO 2010137793A1
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Prior art keywords
chamber
temperature
wafer
baking
heater
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PCT/KR2010/001390
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French (fr)
Korean (ko)
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김종호
신동문
김기현
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(주)노바마그네틱스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Definitions

  • the present invention heats the wafer top by high temperature air convection heated by a heater located at the bottom of the chamber by using a convection chamber that can insulate the outside, and the wafer is fixed on a specially manufactured jig (Jig) to top the wafer.
  • a magnetic thin film sensor is manufactured by designing and laying out an electronic circuit to be manufactured, then fabricating it as a mask, and performing image transfer to a prepared wafer. This is becoming increasingly integrated by the development of various microfabrication techniques. Photolithography, which makes a designed circuit into a mask and transfers an image of the mask onto a wafer, is important in that it enables the shape of the circuit.
  • Photolithography process includes wafer cleaning, photoresist coat, softbake, alignment and exposure, development, hardbaking, etching and plating (Plating), photoresist strip (Strip) and wafer cleaning process, and the baking process is carried out for the purpose of improving the adhesion, chemical resistance and durability of the photoresist film by volatilizing the organic solvent contained in the photoresist film.
  • This requires precise process conditions in that the electrical characteristics of the device are improved by adjusting the conditions of the photoresist film to facilitate the development and etching process, which is a subsequent process of the baking process, to form an accurate pattern on the material to which the image is to be transferred. do.
  • Baking is largely divided into soft baking and hard baking.
  • soft baking is applied to a wafer or a mask substrate, and then the solvent of the photosensitive film is thermally weakly heated to volatilize to some extent, thereby adhering to adhesion and chemical resistance of the photosensitive film.
  • durability to improve the durability, and in particular, baking conditions are closely related to the process line width and thickness loss of the photoresist film during the exposure and development processes. Also, a reproducible shape can be obtained.
  • hard baking is performed at a temperature of about 40 to 60 ° C. higher than the normal soft baking temperature after developing the photoresist film, which removes excess solvent and water remaining in the photoresist film itself after developing to improve adhesion between the photoresist film and the wafer surface.
  • hard baking is performed at a temperature of about 40 to 60 ° C. higher than the normal soft baking temperature after developing the photoresist film, which removes excess solvent and water remaining in the photoresist film itself after developing to improve adhesion between the photoresist film and the wafer surface.
  • a conventional baking process is a method in which a wafer is placed on an upper surface of a baking plate, and then the baking plate is heated to a temperature set by a heater installed at the bottom of the baking plate, and the baking plate conducts heat to the wafer in contact with the heat. .
  • FIG. 1 is a schematic cross-sectional view for explaining a conventional baking apparatus.
  • a circular baking plate 12 in which a wafer W coated with a photosensitive film is placed is provided in a chamber 10 for performing a baking process, and the baking plate 12 includes a plurality of baking plates 12.
  • the transfer pin 14 penetrates the baking plate 12 and is installed in a driving device (not shown) below the chamber 10. The transfer pin 14 is moved up and down by the driving device, and an upper portion of the transfer pin 14 has a stroke distance up to a predetermined distance in the baking plate 12 in the baking plate 12.
  • the transfer pin 14 moves downward.
  • the wafer W is seated on the baking plate 12.
  • the baking plate 12 When the wafer W is seated on the baking plate 12 as described above, the baking plate 12 is heated to a predetermined temperature by the heater 16 installed under the baking plate 12. Heat of the heated baking plate 12 is transferred to the wafer W so that the wafer W is heated to cure the photosensitive film applied on the wafer W.
  • the baking plate is heated by a heater, and the high temperature of the heated baking plate is transferred to the wafer so that the wafer is heated. Occurs.
  • the temperature difference makes the thickness of the photoresist film to be cured generally not uniform, and serves as a defect factor in subsequent processes.
  • the back surface of the wafer is contaminated at the contact of the baking plate and the wafer, the high-temperature baking plate has a problem that can cause a burn to the operator.
  • the present invention was conceived to solve the above problems, using a convection chamber that can insulate the outside to heat the wafer top by high temperature air convection heated by a heater located at the bottom of the chamber, the wafer is specifically By fixing on the fabricated jigs and uniformly heating not only the top of the wafer but also the bottom thereof, the present invention provides a baking apparatus and method for manufacturing a magnetic thin film sensor that enhances the adhesion between the photoresist film and the wafer surface as well as the durability of the photoresist film itself. Its purpose is to.
  • Another object of the present invention is to control the heater installed in the lower end of the chamber in real time by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor, by maintaining the air temperature inside the chamber uniformly coated on the wafer
  • the present invention provides a baking apparatus and method for manufacturing a magnetic thin film sensor that uniformly cures a magnetic thin film sensor to improve yield.
  • another object of the present invention is to provide a baking apparatus and method for manufacturing a magnetic thin film sensor which does not cause a worker to be burned by a high temperature baking plate because a baking plate used in a conventional apparatus is not required.
  • another object of the present invention is to manufacture a magnetic thin film sensor that can increase the thermal conductivity by laminating the surface of the mold as well as maximizing the contact area with the wafer to heat the wafer at a uniform temperature.
  • Baking apparatus for manufacturing a magnetic thin film sensor according to a preferred embodiment of the present invention for achieving the above object is installed in the lower end of the chamber inside the baking process is performed, a plurality of heaters for heating the air in the chamber;
  • a temperature sensor installed inside the chamber and sensing a temperature inside the chamber;
  • a control unit connected to the temperature sensor and configured to analyze a temperature signal detected by the temperature sensor and to control power supplied to the heater to maintain a uniform temperature in the chamber;
  • a power supply device connected to the control unit and supplying power to the heater according to a control signal output from the control unit;
  • control unit is connected to the temperature sensor, the input device for converting the temperature signal inside the chamber detected by the temperature sensor in the analog signal to a digital signal;
  • a control device connected to the input device and outputting a control signal for controlling power supplied to the heater by analyzing a temperature signal converted by the input device; It is connected to the control device, characterized in that it comprises an output device for converting the control signal output from the control device into a digital signal to an analog signal.
  • the height of the plate is characterized in that the frame placed on the upper surface of the plate is installed so as to be located in the center of the interior of the baking chamber.
  • the mold is characterized in that located in the center of the inside of the cubic chamber to equalize the temperature of the air delivered to the wafer (W).
  • a baking method for manufacturing a magnetic thin film sensor for achieving the above object includes a wafer insertion step of mounting a wafer fixed to the frame on a plate for supporting a wafer installed in the chamber; An air heating step in the chamber for supplying power to a heater installed at each corner of the chamber to increase the temperature of the air in the chamber; A baking progress step by convection in which the temperature of the air in the chamber is heated to a predetermined temperature to cause curing of the photosensitive film applied to the wafer; Determining an advancing time of the baking process; When the progress time of the baking process is checked and the preset time is reached, the power supply to the heater is stopped, the baking process is terminated after the wafer is removed, and the progress of the baking process does not reach the preset time.
  • control unit determines the temperature distribution inside the chamber by the temperature signal detected by the temperature sensor and controls the power supplied to the heater.
  • Baking apparatus and method for manufacturing a magnetic thin film sensor according to the present invention has the following effects.
  • the present invention heats the upper part of the wafer by a high temperature air convection heated by a heater located at the bottom of the chamber using a convection chamber that can insulate the outside, and the wafer is fixed on a specially manufactured jig
  • a heater located at the bottom of the chamber using a convection chamber that can insulate the outside
  • the wafer is fixed on a specially manufactured jig
  • the present invention is to control the heater installed in the lower end of the chamber in real time by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor, thereby maintaining a uniform air temperature in the chamber to the photosensitive film applied on the wafer By uniformly curing to improve the production yield of the magnetic thin film sensor.
  • the present invention does not require the baking plate used in the conventional apparatus, so that there is no risk of the worker being burned by the high heat baking plate.
  • the present invention can maximize the contact area with the wafer in order to heat the wafer to a uniform temperature as well as to raise the thermal conductivity by lapping the surface of the mold.
  • FIG. 1 is a schematic cross-sectional view for explaining a conventional baking apparatus.
  • Figure 2 is an interior view of a baking chamber for explaining the baking apparatus according to an embodiment of the present invention.
  • Figure 3 is a block diagram for explaining the operation of the baking apparatus according to an embodiment of the present invention.
  • FIG. 4 is a flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
  • FIG. 2 is an internal view of a baking chamber for explaining a baking apparatus according to an embodiment of the present invention
  • Figure 3 is a block diagram for explaining the operation of the baking apparatus according to an embodiment of the present invention
  • Figure 4 is A flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
  • the baking apparatus for manufacturing a magnetic thin film sensor is a chamber 100, a heater 102, a temperature sensor 104, a plate 106, The frame 108, the power supply 118, the control unit 110, the input device 112, the output device 116, the control device 114 and the like.
  • FIG. 2 is an internal view of a baking chamber for explaining a baking apparatus according to an embodiment of the present invention, as shown in Figure 2, is provided with a cubic baking chamber 100 for performing a baking process, At the lower end of the chamber 100, a heater 102 for heating air in the chamber 100 and a temperature sensor 104 for detecting an internal temperature are installed. At this time, the temperature sensor 104 is installed so as not to be directly affected by the heat generated from the heater (102). In the middle of the inside of the baking chamber 100, a plate 106 for supporting the mold 108 is installed and the mold 108 is placed on the upper surface.
  • the mold 108 is positioned in the center of the cubic chamber 100, and the temperature of the heater 102 installed at the lower end is controlled by It can harden
  • the baking apparatus includes a heater 102 for heating air in a baking chamber, and baking.
  • a temperature sensor 104 for sensing a temperature inside the chamber, a power supply 118 for supplying power to the heater 102, and a heater 102 according to a temperature signal of the temperature sensor 104.
  • a control unit 110 for controlling the power supplied.
  • the controller 110 includes an input device 112 connected to a temperature sensor 104, an output device 116 connected to the power supply 118, and the input device 112 and an output device 116. It includes a control device 114 connected to.
  • the air in the chamber is heated to a predetermined temperature by the heaters 102 installed at the bottom of the baking chamber, and the baking process is performed.
  • the temperature sensor 104 installed inside the chamber continuously detects the temperature inside the chamber during the baking process, and the input device 112 connected to the temperature sensor 104 is the temperature sensor 104. Converts the temperature signal detected by the analog signal into a digital signal.
  • the controller 114 connected to the input device 112 determines the temperature distribution state inside the chamber by using the temperature signal converted from the input device 112 as input data, and controls the power supplied to the heater 102.
  • the temperature control loop using the feedback control concept as described above is continuously performed while the baking process is performed to maintain a constant temperature inside the chamber where the baking process is performed.
  • the temperature inside the chamber can be kept uniform at a predetermined temperature, and the air in the chamber heated evenly transfers uniform heat to the wafer, and uniformly cures the photosensitive film applied to the wafer.
  • the baking plate used in the conventional apparatus since the baking plate used in the conventional apparatus is not necessary, there is no risk of the worker being burned by the high temperature baking plate.
  • the mold on which the wafer is raised maximizes the contact area with the wafer to heat the wafer to a uniform temperature.
  • FIG. 4 is a flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
  • a wafer W in which a wafer fixed to a mold is installed in a chamber is illustrated. It is placed on the plate for support (S 200). Thereafter, power is supplied to heaters installed at each corner of the inside of the chamber to increase the temperature of the air in the chamber (S202). Then, the temperature of the air in the chamber is heated to a predetermined temperature to cure the photosensitive film applied to the wafer (S204). Thereafter, when the progress time of the baking process is checked to reach a predetermined time (S206), the power supplied to the heater is stopped (S214), and when the wafer is removed, the baking process is terminated (S216).
  • the air temperature inside the chamber is sensed by the temperature sensor installed in the chamber (S 208), and the controller detects the temperature
  • the temperature distribution in the chamber is determined by the temperature signal, and a control signal for controlling the power supplied to the heater is output (S 210).
  • the temperature inside the chamber is uniformly maintained by controlling the power supplied to the heaters installed at the corners according to the control signal of the controller (S 212).
  • the photosensitive film applied to the surface of the wafer can be uniformly cured.
  • the present invention can be used for manufacturing all thin film sensors using photoresist, manufacturing semiconductor equipment, and the like.

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Abstract

Provided are a baking device for preparing a magnetic thin film sensor and a method thereof, wherein a wafer top part is heated by the convection of high temperature air, which is heated by a heater positioned at a lower end of a convection chamber capable of being insulated from the outside, the wafer is fixed on a specifically prepared frame (jig) such that the lower part as well as the top part may be uniformly heated, thereby promoting the durability of a photosensitive film itself as well as the adhesion force between the photosensitive film and the surfaces of the wafer, the heater mounted at the lower end part of the chamber is controlled in real time by a control part, which controls the internal temperature of a baking chamber according to a signal output from a temperature sensor, such that the temperature of air in the chamber may be kept uniform so as to uniformly cure the photosensitive film doped on the wafer, thereby improving the yield of the magnetic thin film sensor, workers are protected from burns from a baking plate of high temperature since the baking plate used in conventional devices is no longer required, and the frame to secure the wafer is maximized in the contact area with the wafer for heating the wafer at uniform temperature and increased in heat conductivity since the surfaces of the frame are lapped.

Description

자기박막센서 제조를 위한 베이킹 장치 및 방법Baking apparatus and method for manufacturing magnetic thin film sensor
본 발명은 외부와 단열이 가능한 대류 챔버를 이용하여 챔버 하단에 위치한 히터를 통해 가열된 고열의 공기 대류에 의해 웨이퍼 상부를 가열하고, 상기 웨이퍼는 특수하게 제작된 틀(Jig) 위에 고정시켜 웨이퍼 상부뿐만이 아니라 하부도 균일하게 가열함으로써, 감광막과 웨이퍼 표면간의 접착력을 증진시킴은 물론 감광막 자체의 내구력을 증진시키고, 온도감지센서의 신호를 통해 베이킹 챔버 내의 온도를 제어하는 제어부에 의해 챔버 하단부에 설치된 히터를 실시간으로 제어함으로써, 챔버 내부의 공기 온도를 균일하게 유지하여 웨이퍼 상에 도포된 감광막을 균일하게 경화시켜 자기박막센서의 제조 수율을 향상시키며, 종래의 장치에서 사용되는 베이킹 플레이트가 필요하지 않기 때문에 고열의 베이킹 플레이트에 의해 작업자가 화상을 입을 우려가 없고, 웨이퍼가 올려지는 틀은 균일한 온도로 웨이퍼를 가열하기 위해 웨이퍼와의 접촉 면적을 최대화시킴은 물론 틀의 표면을 연마(Lapping)하여 열전도율을 높일 수 있는 자기박막센서 제조를 위한 베이킹 장치 및 방법에 관한 기술이다.The present invention heats the wafer top by high temperature air convection heated by a heater located at the bottom of the chamber by using a convection chamber that can insulate the outside, and the wafer is fixed on a specially manufactured jig (Jig) to top the wafer. In addition, by heating the lower part uniformly, not only the adhesion between the photosensitive film and the wafer surface but also the durability of the photoresist film itself, and a heater installed at the bottom of the chamber by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor By controlling in real time, by maintaining the air temperature inside the chamber uniformly to uniformly harden the photosensitive film applied on the wafer to improve the production yield of the magnetic thin film sensor, since the baking plate used in the conventional apparatus is not necessary Workers can be burned by high temperature baking plates Baking for manufacturing magnetic thin film sensor that can raise the thermal conductivity by laminating the surface of the mold as well as maximizing the contact area with the wafer to heat the wafer at a uniform temperature. A technique relating to an apparatus and method.
일반적으로 자기 박막 센서는 만들고자하는 전자회로를 설계하여 레이아웃(Layout)한 다음 이를 마스크로 제작하고, 준비된 웨이퍼에 영상전달을 행하여 만들어진다. 이는 여러 가지 미세 가공 기술의 개발에 의해 점점 고집적화되고 있는데, 설계된 회로를 마스크로 제작하고 마스크의 영상을 웨이퍼에 옮기는 사진식각공정(Photo Lithography)은 회로의 형상을 가능하게 한다는 점에서 중요시되고 있다.In general, a magnetic thin film sensor is manufactured by designing and laying out an electronic circuit to be manufactured, then fabricating it as a mask, and performing image transfer to a prepared wafer. This is becoming increasingly integrated by the development of various microfabrication techniques. Photolithography, which makes a designed circuit into a mask and transfers an image of the mask onto a wafer, is important in that it enables the shape of the circuit.
사진식각공정은 웨이퍼 세척(Cleaning), 감광막 도포(Photoresist Coat), 소프트베이킹(Softbake), 정열(Align) 및 노광(Expose), 현상(Develop), 하드베이킹(Hardbake), 식각(Etching) 및 도금(Plating), 감광막 제거(Strip) 및 웨이퍼 세척 공정으로 진행되는데, 이중에서도 베이킹 공정은 감광막 속에 함유된 유기용제를 휘발시켜 감광막의 접착력, 내약품성 및 내구력을 증진시키는 목적으로 행해진다. 이는 감광막의 조건을 적절하게 조절하여 베이킹 공정의 후속공정인 현상 및 식각공정을 용이하게 하여 영상을 전달하고자 하는 물질에 정확한 패턴 형성을 통해 소자의 전기적 특성을 향상시킨다는 점에서 정밀한 공정조건을 필요로 한다. Photolithography process includes wafer cleaning, photoresist coat, softbake, alignment and exposure, development, hardbaking, etching and plating (Plating), photoresist strip (Strip) and wafer cleaning process, and the baking process is carried out for the purpose of improving the adhesion, chemical resistance and durability of the photoresist film by volatilizing the organic solvent contained in the photoresist film. This requires precise process conditions in that the electrical characteristics of the device are improved by adjusting the conditions of the photoresist film to facilitate the development and etching process, which is a subsequent process of the baking process, to form an accurate pattern on the material to which the image is to be transferred. do.
베이킹은 크게 소프트 베이킹과 하드 베이킹로 구분되는데, 먼저, 소프트 베이킹은 웨이퍼 혹은 마스크 기판에 감광막을 도포한 후, 상기 감광막의 용제를 열적으로 약하게 가열시켜 어느 정도 휘발시켜 줌으로써 상기 감광막의 접착력, 내약품성 및 내구력을 향상시켜 후속공정을 용이하게 하기 위함이며, 특히 베이킹 조건은 노광 및 현상공정에서 감광막의 공정선폭 및 두께손실과 밀접한 관계를 지니고 있으므로 감광막 종류에 따른 지정된 온도 및 시간을 정확히 지켜야만 균일하고도 재현성 있는 형상을 얻을 수 있다. Baking is largely divided into soft baking and hard baking. First, soft baking is applied to a wafer or a mask substrate, and then the solvent of the photosensitive film is thermally weakly heated to volatilize to some extent, thereby adhering to adhesion and chemical resistance of the photosensitive film. And durability to improve the durability, and in particular, baking conditions are closely related to the process line width and thickness loss of the photoresist film during the exposure and development processes. Also, a reproducible shape can be obtained.
한편 하드 베이킹은 상기 감광막을 현상한 후 보통 소프트 베이킹 온도보다 40 ∼ 60℃ 정도 높은 온도에서 행하는데, 이는 현상작업 후 감광막 자체 내에 잔존하는 여분의 용제 및 수분을 제거함으로써 감광막과 웨이퍼 표면간의 접착력을 증진시키고 아울러 감광막 자체의 내약품성 및 내구력을 증진시켜 다음 식각공정 및 이온화를 이용하는 공정을 용이하게 하기 위함이다. On the other hand, hard baking is performed at a temperature of about 40 to 60 ° C. higher than the normal soft baking temperature after developing the photoresist film, which removes excess solvent and water remaining in the photoresist film itself after developing to improve adhesion between the photoresist film and the wafer surface. In addition, to improve the chemical resistance and durability of the photosensitive film itself to facilitate the following etching process and the process using the ionization.
종래의 베이킹 공정을 위한 장치는 베이킹 플레이트의 상면에 웨이퍼를 안착시킨 후, 베이킹 플레이트의 하부에 설치되는 히터로 설정된 온도로 베이킹 플레이트를 가열하고 베이킹 플레이트의 열이 접촉하고 있는 웨이퍼로 전도되는 방식이다.A conventional baking process is a method in which a wafer is placed on an upper surface of a baking plate, and then the baking plate is heated to a temperature set by a heater installed at the bottom of the baking plate, and the baking plate conducts heat to the wafer in contact with the heat. .
도 1은 종래의 베이킹 장치를 설명하기 위한 개략적인 단면도이다.1 is a schematic cross-sectional view for explaining a conventional baking apparatus.
도 1에 도시한 바와 같이, 베이킹 공정을 수행하기 위한 챔버(10)내에 감광막이 도포된 웨이퍼(W)가 놓여지는 원형의 베이킹 플레이트(12)가 설치되어 있고, 베이킹 플레이트(12)에는 복수개의 이송핀(14)이 베이킹 플레이트(12)를 관통하여 챔버(10) 하부의 구동장치(도시되지 않음)에 설치되어 있다. 상기 이송핀(14)은 상기 구동장치에 의해 상하로 이동되며, 이송핀(14)의 상부는 베이킹 플레이트(12) 내부에서 베이킹 플레이트(12)의 상방향으로 일정 거리만큼의 행정거리를 가진다. As shown in FIG. 1, a circular baking plate 12 in which a wafer W coated with a photosensitive film is placed is provided in a chamber 10 for performing a baking process, and the baking plate 12 includes a plurality of baking plates 12. The transfer pin 14 penetrates the baking plate 12 and is installed in a driving device (not shown) below the chamber 10. The transfer pin 14 is moved up and down by the driving device, and an upper portion of the transfer pin 14 has a stroke distance up to a predetermined distance in the baking plate 12 in the baking plate 12.
챔버(10) 외부의 웨이퍼(W) 이송 장치(도시되지 않음)에 의해 웨이퍼(W)가 챔버(10) 내부로 이송되어 이송핀(14) 위에 안착되면 이송핀(14)이 하방향으로 이동하여 베이킹 플레이트(12)상에 웨이퍼(W)를 안착시킨다.When the wafer W is transferred into the chamber 10 and seated on the transfer pin 14 by a wafer transfer device (not shown) outside the chamber 10, the transfer pin 14 moves downward. The wafer W is seated on the baking plate 12.
상기와 같이 베이킹 플레이트(12)상에 웨이퍼(W)가 안착되면, 베이킹 플레이트(12)의 하부에 설치된 히터(16)에 의해 베이킹 플레이트(12)는 기설정된 온도로 가열된다. 가열된 베이킹 플레이트(12)의 열이 웨이퍼(W)로 전달되어 웨이퍼(W)가 가열됨으로써 웨이퍼(W)상에 도포된 감광막이 경화된다. When the wafer W is seated on the baking plate 12 as described above, the baking plate 12 is heated to a predetermined temperature by the heater 16 installed under the baking plate 12. Heat of the heated baking plate 12 is transferred to the wafer W so that the wafer W is heated to cure the photosensitive film applied on the wafer W.
상술한 바와 같이, 종래의 베이킹 장치는 베이킹 플레이트를 히터로 가열하고, 가열된 상기 베이킹 플레이트의 고열이 웨이퍼로 전달되어 웨이퍼가 가열되는 것이므로 베이킹 플레이트로부터 웨이퍼가 전체적으로 균일하게 가열되지 못하여 부위별 온도 차이가 발생한다. 상기 온도 차이는 경화되는 감광막의 두께를 전체적으로 균일하지 않게 하며, 후속 공정의 결함 요인으로 작용한다. 또한 상기 베이킹 플레이트와 웨이퍼의 접촉에서 웨이퍼의 후면이 오염되고, 고열의 베이킹 플레이트는 작업자에게 화상을 입힐 수 있는 문제점이 있다.As described above, in the conventional baking apparatus, the baking plate is heated by a heater, and the high temperature of the heated baking plate is transferred to the wafer so that the wafer is heated. Occurs. The temperature difference makes the thickness of the photoresist film to be cured generally not uniform, and serves as a defect factor in subsequent processes. In addition, the back surface of the wafer is contaminated at the contact of the baking plate and the wafer, the high-temperature baking plate has a problem that can cause a burn to the operator.
이에 본 발명은 상기 문제점들을 해결하기 위하여 착상된 것으로서, 외부와 단열이 가능한 대류 챔버를 이용하여 챔버 하단에 위치한 히터를 통해 가열된 고열의 공기 대류에 의해 웨이퍼 상부를 가열하고, 상기 웨이퍼는 특수하게 제작된 틀(Jig) 위에 고정시켜 웨이퍼 상부뿐만이 아니라 하부도 균일하게 가열함으로써, 감광막과 웨이퍼 표면간의 접착력을 증진시킴은 물론 감광막 자체의 내구력을 증진시키는 자기박막센서 제조를 위한 베이킹 장치 및 방법을 제공하는데 그 목적이 있다. Accordingly, the present invention was conceived to solve the above problems, using a convection chamber that can insulate the outside to heat the wafer top by high temperature air convection heated by a heater located at the bottom of the chamber, the wafer is specifically By fixing on the fabricated jigs and uniformly heating not only the top of the wafer but also the bottom thereof, the present invention provides a baking apparatus and method for manufacturing a magnetic thin film sensor that enhances the adhesion between the photoresist film and the wafer surface as well as the durability of the photoresist film itself. Its purpose is to.
다른 본 발명의 목적은 온도감지센서의 신호를 통해 베이킹 챔버 내의 온도를 제어하는 제어부에 의해 챔버 하단부에 설치된 히터를 실시간으로 제어함으로써, 챔버 내부의 공기 온도를 균일하게 유지하여 웨이퍼 상에 도포된 감광막을 균일하게 경화시켜 자기박막센서의 제조 수율을 향상시키는 자기박막센서 제조를 위한 베이킹 장치 및 방법을 제공하는데 있다.Another object of the present invention is to control the heater installed in the lower end of the chamber in real time by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor, by maintaining the air temperature inside the chamber uniformly coated on the wafer The present invention provides a baking apparatus and method for manufacturing a magnetic thin film sensor that uniformly cures a magnetic thin film sensor to improve yield.
또 본 발명의 다른 목적은 종래의 장치에서 사용되는 베이킹 플레이트가 필요하지 않기 때문에 고열의 베이킹 플레이트에 의해 작업자가 화상을 입을 우려가 없는 자기박막센서 제조를 위한 베이킹 장치 및 방법을 제공하는데 있다.In addition, another object of the present invention is to provide a baking apparatus and method for manufacturing a magnetic thin film sensor which does not cause a worker to be burned by a high temperature baking plate because a baking plate used in a conventional apparatus is not required.
또 본 발명의 다른 목적은 웨이퍼가 올려지는 틀은 균일한 온도로 웨이퍼를 가열하기 위해 웨이퍼와의 접촉 면적을 최대화시킴은 물론 틀의 표면을 연마(Lapping)하여 열전도율을 높일 수 있는 자기박막센서 제조를 위한 베이킹 장치 및 방법을 제공하는데 있다. In addition, another object of the present invention is to manufacture a magnetic thin film sensor that can increase the thermal conductivity by laminating the surface of the mold as well as maximizing the contact area with the wafer to heat the wafer at a uniform temperature. To provide a baking apparatus and method for.
상기 목적을 달성하기 위한 본 발명의 바람직한 실시예에 따른 자기박막센서 제조를 위한 베이킹 장치는 베이킹 공정이 수행되는 챔버 내부의 하단부에 설치되고, 챔버 내부의 공기를 가열하는 복수개의 히터들과; 상기 챔버 내부에 설치되고, 챔버 내부의 온도를 감지하는 온도감지센서와; 상기 온도감지센서와 연결되고, 온도감지센서에서 감지된 온도 신호를 분석하고, 상기 챔버 내부의 온도를 균일하게 유지하기 위해 히터에 공급되는 전원을 제어하는 제어부와; 상기 제어부와 연결되고, 제어부에서 출력된 제어 신호에 따라 히터에 전원을 공급하는 전원공급장치와; 상기 챔버 내부에 놓여지는 틀 및 웨이퍼를 지지하도록 판; 을 포함하며, 상기 히터들에 의해 가열된 챔버 내부의 공기를 대류방식에 의해 균일하게 웨이퍼를 경화시키는 것을 특징으로 한다.Baking apparatus for manufacturing a magnetic thin film sensor according to a preferred embodiment of the present invention for achieving the above object is installed in the lower end of the chamber inside the baking process is performed, a plurality of heaters for heating the air in the chamber; A temperature sensor installed inside the chamber and sensing a temperature inside the chamber; A control unit connected to the temperature sensor and configured to analyze a temperature signal detected by the temperature sensor and to control power supplied to the heater to maintain a uniform temperature in the chamber; A power supply device connected to the control unit and supplying power to the heater according to a control signal output from the control unit; A plate for supporting a mold and a wafer placed inside the chamber; It includes, characterized in that for curing the wafer uniformly by the convection method of the air inside the chamber heated by the heaters.
상기 본 발명에 있어서, 상기 제어부는 상기 온도감지센서와 연결되고, 온도감지센서에서 감지된 챔버 내부의 온도 신호를 아날로그 신호에서 디지털 신호로 변환하는 입력장치와; 상기 입력장치와 연결되고, 입력장치에서 변환된 온도 신호를 분석하여 히터에 공급되는 전원을 제어하기 위한 제어 신호를 출력하는 제어장치와; 상기 제어장치와 연결되고, 제어 장치에서 출력된 제어신호를 디지털 신호에서 아날로그 신호로 변환하는 출력장치를 포함하는 것을 특징으로 한다.In the present invention, the control unit is connected to the temperature sensor, the input device for converting the temperature signal inside the chamber detected by the temperature sensor in the analog signal to a digital signal; A control device connected to the input device and outputting a control signal for controlling power supplied to the heater by analyzing a temperature signal converted by the input device; It is connected to the control device, characterized in that it comprises an output device for converting the control signal output from the control device into a digital signal to an analog signal.
상기 본 발명에 있어서, 상기 판의 높이는 판의 상부면에 놓여지는 틀이 상기 베이킹 챔버 내부의 중앙에 위치되도록 설치되는 것을 특징으로 한다. In the present invention, the height of the plate is characterized in that the frame placed on the upper surface of the plate is installed so as to be located in the center of the interior of the baking chamber.
상기 본 발명에 있어서, 상기 틀은 웨이퍼(W)에 전달되는 공기의 온도를 균일하게 하기 위해 입방형의 챔버 내부의 중앙에 위치하게 되는 것을 특징으로 한다. In the present invention, the mold is characterized in that located in the center of the inside of the cubic chamber to equalize the temperature of the air delivered to the wafer (W).
또한 상기 목적을 달성하기 위한 본 발명의 바람직한 실시예에 따른 자기박막센서 제조를 위한 베이킹 방법은 틀에 고정된 웨이퍼가 챔버 내부에 설치되어 있는 웨이퍼를 지지하기 위한 플레이트 위에 올려지는 웨이퍼 삽입 단계와; 상기 챔버 내부의 각 모서리에 설치되어 있는 히터에 전원이 공급되어 챔버 내부 공기의 온도가 상승하게 하는 챔버 내부의 공기 가열 단계와; 상기 챔버 내부 공기의 온도가 기설정된 온도로 가열되어 웨이퍼에 도포된 감광막의 경화가 진행되게 하는 대류에 의한 베이크 진행 단계와; 상기 베이킹 공정의 진행 시간을 판단하는 단계와; 상기 베이킹 공정의 진행 시간을 체크하여 기설정된 시간에 도달하면, 히터로 공급되는 전원을 중단시키고, 웨이퍼를 제거시킨 후 베이킹 공정이 종료하며, 상기 베이킹 공정의 진행 시간이 기설정된 시간에 도달하지 않으면, 챔버 내부에 설치된 온도감지센서에 의해 챔버 내부의 공기 온도를 감지하고, 제어부에서 온도감지센서에서 감지된 온도신호에 의해 챔버 내부의 온도 분포를 판단하고 히터에 공급되는 전원을 제어하기 위한 제어신호를 출력하며, 상기 제어부의 제어 신호에 따라 각 모서리에 설치된 히터에 공급되는 전원을 제어하여 챔버 내부의 온도를 균일하게 유지하는 히터의 전원 조절 단계; 를 포함하는 것을 특징으로 한다.In addition, a baking method for manufacturing a magnetic thin film sensor according to a preferred embodiment of the present invention for achieving the above object includes a wafer insertion step of mounting a wafer fixed to the frame on a plate for supporting a wafer installed in the chamber; An air heating step in the chamber for supplying power to a heater installed at each corner of the chamber to increase the temperature of the air in the chamber; A baking progress step by convection in which the temperature of the air in the chamber is heated to a predetermined temperature to cause curing of the photosensitive film applied to the wafer; Determining an advancing time of the baking process; When the progress time of the baking process is checked and the preset time is reached, the power supply to the heater is stopped, the baking process is terminated after the wafer is removed, and the progress of the baking process does not reach the preset time. In order to detect the air temperature inside the chamber by the temperature sensor installed inside the chamber, the control unit determines the temperature distribution inside the chamber by the temperature signal detected by the temperature sensor and controls the power supplied to the heater. A power supply control step of controlling a power supplied to a heater installed at each corner according to a control signal of the controller to maintain a uniform temperature inside the chamber; Characterized in that it comprises a.
본 발명에 따른 자기박막센서 제조를 위한 베이킹 장치 및 방법은 다음과 같은 효과를 가진다.Baking apparatus and method for manufacturing a magnetic thin film sensor according to the present invention has the following effects.
첫째, 본 발명은 외부와 단열이 가능한 대류 챔버를 이용하여 챔버 하단에 위치한 히터를 통해 가열된 고열의 공기 대류에 의해 웨이퍼 상부를 가열하고, 상기 웨이퍼는 특수하게 제작된 틀(Jig) 위에 고정시켜 웨이퍼 상부뿐만이 아니라 하부도 균일하게 가열함으로써, 감광막과 웨이퍼 표면간의 접착력을 증진시킴은 물론 감광막 자체의 내구력을 증진시킨다. First, the present invention heats the upper part of the wafer by a high temperature air convection heated by a heater located at the bottom of the chamber using a convection chamber that can insulate the outside, and the wafer is fixed on a specially manufactured jig By uniformly heating not only the upper part of the wafer but also the lower part, the adhesion between the photoresist film and the wafer surface is enhanced as well as the durability of the photoresist film itself.
둘째, 본 발명은 온도감지센서의 신호를 통해 베이킹 챔버 내의 온도를 제어하는 제어부에 의해 챔버 하단부에 설치된 히터를 실시간으로 제어함으로써, 챔버 내부의 공기 온도를 균일하게 유지하여 웨이퍼 상에 도포된 감광막을 균일하게 경화시켜 자기박막센서의 제조 수율을 향상시킨다. Second, the present invention is to control the heater installed in the lower end of the chamber in real time by a control unit for controlling the temperature in the baking chamber through the signal of the temperature sensor, thereby maintaining a uniform air temperature in the chamber to the photosensitive film applied on the wafer By uniformly curing to improve the production yield of the magnetic thin film sensor.
셋째, 본 발명은 종래의 장치에서 사용되는 베이킹 플레이트가 필요하지 않기 때문에 고열의 베이킹 플레이트에 의해 작업자가 화상을 입을 우려가 없다.Third, the present invention does not require the baking plate used in the conventional apparatus, so that there is no risk of the worker being burned by the high heat baking plate.
넷째, 본 발명은 웨이퍼가 올려지는 틀은 균일한 온도로 웨이퍼를 가열하기 위해 웨이퍼와의 접촉 면적을 최대화시킴은 물론 틀의 표면을 연마(Lapping)하여 열전도율을 높일 수 있다. Fourth, the present invention can maximize the contact area with the wafer in order to heat the wafer to a uniform temperature as well as to raise the thermal conductivity by lapping the surface of the mold.
도 1은 종래의 베이킹 장치를 설명하기 위한 개략적인 단면도. 1 is a schematic cross-sectional view for explaining a conventional baking apparatus.
도 2는 본 발명의 일실시예에 따른 베이킹 장치를 설명하기 위한 베이킹 챔버의 내부도.Figure 2 is an interior view of a baking chamber for explaining the baking apparatus according to an embodiment of the present invention.
도 3은 본 발명의 일실시예에 따른 베이킹 장치의 동작을 설명하기 위한 구성도.Figure 3 is a block diagram for explaining the operation of the baking apparatus according to an embodiment of the present invention.
도 4는 본 발명의 일실시예에 따른 베이킹 장치를 이용하여 베이킹 공정을 하는 흐름도.4 is a flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
이하 첨부된 도면과 함께 본 발명의 바람직한 실시 예를 살펴보면 다음과 같은데, 본 발명을 설명함에 있어서 관련된 공지기술 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략할 것이며, 후술되는 용어들은 본 발명에서의 기능을 고려하여 정의된 용어들로서 이는 사용자, 운용자의 의도 또는 관례 등에 따라 달라질 수 있으므로, 그 정의는 본 발명인 자기박막센서 제조를 위한 베이킹 장치 및 방법을 설명하는 본 명세서 전반에 걸친 내용을 토대로 내려져야 할 것이다. Looking at the preferred embodiment of the present invention together with the accompanying drawings as follows, when it is determined that the detailed description of the known art or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention The description will be omitted, and the following terms are defined in consideration of functions in the present invention, which may vary according to the intention or custom of the user or operator, and the definitions thereof are the baking apparatus for manufacturing the magnetic thin film sensor of the present invention. It should be made based on the contents throughout the specification to describe the method.
도 2는 본 발명의 일실시예에 따른 베이킹 장치를 설명하기 위한 베이킹 챔버의 내부도이고, 도 3은 본 발명의 일실시예에 따른 베이킹 장치의 동작을 설명하기 위한 구성도이며, 도 4는 본 발명의 일실시예에 따른 베이킹 장치를 이용하여 베이킹 공정을 하는 흐름도이다.2 is an internal view of a baking chamber for explaining a baking apparatus according to an embodiment of the present invention, Figure 3 is a block diagram for explaining the operation of the baking apparatus according to an embodiment of the present invention, Figure 4 is A flowchart of a baking process using a baking apparatus according to an embodiment of the present invention.
도 1 내지 도 3에 도시된 바와 같이, 본 발명의 일실시예에 따른 자기박막센서 제조를 위한 베이킹 장치는 챔버(100), 히터(102), 온도감지센서(104), 플레이트(106), 틀(108), 전원공급장치(118), 제어부(110), 입력장치(112), 출력장치(116), 제어장치(114) 등으로 구성된다.As shown in Figures 1 to 3, the baking apparatus for manufacturing a magnetic thin film sensor according to an embodiment of the present invention is a chamber 100, a heater 102, a temperature sensor 104, a plate 106, The frame 108, the power supply 118, the control unit 110, the input device 112, the output device 116, the control device 114 and the like.
도 2는 본 발명의 일실시예에 따른 베이킹 장치를 설명하기 위한 베이킹 챔버의 내부도로서, 도 2에 도시된 바와 같이, 베이킹 공정을 수행하기 위한 입방형의 베이킹 챔버(100)가 구비되고, 챔버(100) 내부의 하단에는 챔버(100) 내부의 공기를 가열하기 위한 히터(102)와 내부 온도를 감지하기 위한 온도 감지 센서(104)가 설치된다. 이때 온도 감지 센서(104)는 히터(102)에서 발생되는 열에 대한 영향을 직접적으로 받지 않도록 설치된다. 상기 베이킹 챔버(100) 내부의 중간에는 틀(108)을 지지하기 위한 플레이트(106)가 설치되고 상부면에 틀(108)이 올려진다. 또한 웨이퍼(W)에 전달되는 공기의 온도가 균일하게 하기 위해 틀(108)이 입방형의 챔버(100) 내부의 중앙에 위치하게 되고, 하단부에 설치되어 있는 히터(102)의 온도를 제어하여 웨이퍼(W)에 도포되어 있는 감광막을 균일하게 경화시킬 수 있는 것이다.2 is an internal view of a baking chamber for explaining a baking apparatus according to an embodiment of the present invention, as shown in Figure 2, is provided with a cubic baking chamber 100 for performing a baking process, At the lower end of the chamber 100, a heater 102 for heating air in the chamber 100 and a temperature sensor 104 for detecting an internal temperature are installed. At this time, the temperature sensor 104 is installed so as not to be directly affected by the heat generated from the heater (102). In the middle of the inside of the baking chamber 100, a plate 106 for supporting the mold 108 is installed and the mold 108 is placed on the upper surface. In addition, in order to make the temperature of the air delivered to the wafer W uniform, the mold 108 is positioned in the center of the cubic chamber 100, and the temperature of the heater 102 installed at the lower end is controlled by It can harden | cure the photosensitive film apply | coated to the wafer W uniformly.
도 3은 본 발명의 일실시예에 따른 베이킹 장치의 동작을 설명하기 위한 구성도로서, 도 3에 도시된 바와 같이, 상기 베이킹 장치는 베이킹 챔버 내부의 공기를 가열하는 히터(102)와, 베이킹 챔버 내부의 온도를 감지하는 온도감지센서(104)와, 상기 히터(102)에 전원을 공급하는 전원공급장치(118)와, 상기 온도감지센서(104)의 온도 신호에 따라 히터(102)에 공급되는 전원을 제어하는 제어부(110)를 구비한다.3 is a block diagram illustrating an operation of a baking apparatus according to an embodiment of the present invention. As shown in FIG. 3, the baking apparatus includes a heater 102 for heating air in a baking chamber, and baking. A temperature sensor 104 for sensing a temperature inside the chamber, a power supply 118 for supplying power to the heater 102, and a heater 102 according to a temperature signal of the temperature sensor 104. A control unit 110 for controlling the power supplied.
상기 제어부(110)는 온도 감지 센서(104)와 연결되는 입력장치(112)와, 상기 전원공급장치(118)와 연결되는 출력장치(116) 및 상기 입력장치(112)와 출력장치(116)에 연결되는 제어장치(114)를 포함한다.The controller 110 includes an input device 112 connected to a temperature sensor 104, an output device 116 connected to the power supply 118, and the input device 112 and an output device 116. It includes a control device 114 connected to.
베이킹 챔버 하단에 설치되어 있는 히터(102)들에 의해 챔버 내부의 공기가 기설정된 온도로 가열되어 베이킹 공정이 진행된다. 상기 챔버 내부에 설치되는 온도감지센서(104)는 베이킹 공정이 진행되는 동안 계속해서 상기 챔버 내부의 온도를 감지하고, 온도감지센서(104)와 연결된 입력장치(112)는 온도감지센서(104)에서 감지된 온도 신호를 아날로그 신호에서 디지털 신호로 변환한다. 또한 입력장치(112)와 연결된 제어장치(114)는 입력장치(112)에서 변환된 온도 신호를 입력 데이터로 하여 상기 챔버 내부의 온도 분포 상태를 판단하고, 히터(102)에 공급되는 전원을 제어하기 위한 제어 신호를 출력한다. 상기 제어장치(114)에서 출력된 제어 신호는 제어 장치(114)와 연결된 출력장치(116)에서 아날로그 신호로 변환되어 출력장치(116)와 연결된 전원공급장치(118)로 보내지면, 전원공급장치(118)에서는 출력장치(116)에서 받은 제어 신호에 의해 히터(102)에 공급되는 전원을 조절하는 것이다. 이때, 상기 챔버의 각 부분에 대한 온도 감지 신호에 의해 출력되는 제어 신호는 각기 대응되는 히터(102)를 동작하게 하여 챔버 내부의 온도를 균일하게 유지한다. The air in the chamber is heated to a predetermined temperature by the heaters 102 installed at the bottom of the baking chamber, and the baking process is performed. The temperature sensor 104 installed inside the chamber continuously detects the temperature inside the chamber during the baking process, and the input device 112 connected to the temperature sensor 104 is the temperature sensor 104. Converts the temperature signal detected by the analog signal into a digital signal. In addition, the controller 114 connected to the input device 112 determines the temperature distribution state inside the chamber by using the temperature signal converted from the input device 112 as input data, and controls the power supplied to the heater 102. Outputs a control signal for When the control signal output from the control device 114 is converted into an analog signal in the output device 116 connected to the control device 114 and sent to the power supply device 118 connected to the output device 116, the power supply device In 118, the power supplied to the heater 102 is controlled by the control signal received from the output device 116. At this time, the control signal output by the temperature sensing signal for each part of the chamber to operate the corresponding heater 102, respectively, to maintain a uniform temperature inside the chamber.
상술한 바와 같은 피드백 제어 개념을 이용한 온도 제어 루프는 베이킹 공정이 진행되는 챔버 내부의 온도를 일정하게 유지하기 위해 베이킹 공정이 수행되는 동안 계속 수행된다.The temperature control loop using the feedback control concept as described above is continuously performed while the baking process is performed to maintain a constant temperature inside the chamber where the baking process is performed.
그러므로 챔버 내부의 온도는 기설정된 온도로 균일하게 유지시킬 수 있으며, 균일하게 가열된 상기 챔버 내부의 공기는 상기 웨이퍼에 균일한 열을 전달하고, 웨이퍼에 도포된 감광막을 균일하게 경화시킨다. 또한 종래의 장치에서 사용되는 베이킹 플레이트가 필요하지 않기 때문에 고열의 베이킹 플레이트에 작업자가 화상을 입을 우려가 없다. 이때, 상기 웨이퍼가 올려지는 틀은 균일한 온도로 웨이퍼를 가열하기 위해 웨이퍼와의 접촉 면적을 최대화시킨다. 또한 틀의 표면을 연마(Lapping)하여 열전도율을 높일 수 있는 것이다.Therefore, the temperature inside the chamber can be kept uniform at a predetermined temperature, and the air in the chamber heated evenly transfers uniform heat to the wafer, and uniformly cures the photosensitive film applied to the wafer. In addition, since the baking plate used in the conventional apparatus is not necessary, there is no risk of the worker being burned by the high temperature baking plate. At this time, the mold on which the wafer is raised maximizes the contact area with the wafer to heat the wafer to a uniform temperature. In addition, it is possible to increase the thermal conductivity by lapping the surface of the mold.
도 4는 본 발명의 일실시예에 따른 베이킹 장치를 이용하여 베이킹 공정을 하는 흐름도로서, 도 4에 도시된 바와 같이, 먼저, 틀에 고정된 웨이퍼가 챔버 내부에 설치되어 있는 웨이퍼(W)를 지지하기 위한 플레이트 위에 올려진다(S 200). 이후 상기 챔버 내부의 각 모서리에 설치되어 있는 히터에 전원이 공급되어 챔버 내부 공기의 온도가 상승한다(S 202). 그러면 상기 챔버 내부 공기의 온도가 기설정된 온도로 가열되어 상기 웨이퍼에 도포된 감광막의 경화가 진행된다(S 204). 이후 베이킹 공정의 진행 시간을 체크하여 기설정된 시간에 도달하면(S 206), 히터로 공급되는 전원을 중단시키고(S 214), 웨이퍼를 제거시키면 베이킹 공정이 종료된다(S 216). 그러나 베이킹 공정의 진행 시간이 기설정된 시간에 도달하지 않으면(S 206), 상기 챔버 내부에 설치된 온도감지센서에 의해 챔버 내부의 공기 온도를 감지하고(S 208), 제어부에서는 온도감지센서에서 감지된 온도 신호에 의해 챔버 내부의 온도 분포를 판단하고 히터에 공급되는 전원을 제어하기 위한 제어 신호를 출력한다(S 210). 이후 상기 제어부의 제어 신호에 따라 각 모서리에 설치된 히터에 공급되는 전원을 제어함으로써 챔버 내부의 온도를 균일하게 유지한다(S 212).4 is a flowchart of a baking process using a baking apparatus according to an embodiment of the present invention. As shown in FIG. 4, first, a wafer W in which a wafer fixed to a mold is installed in a chamber is illustrated. It is placed on the plate for support (S 200). Thereafter, power is supplied to heaters installed at each corner of the inside of the chamber to increase the temperature of the air in the chamber (S202). Then, the temperature of the air in the chamber is heated to a predetermined temperature to cure the photosensitive film applied to the wafer (S204). Thereafter, when the progress time of the baking process is checked to reach a predetermined time (S206), the power supplied to the heater is stopped (S214), and when the wafer is removed, the baking process is terminated (S216). However, if the progress of the baking process does not reach a predetermined time (S 206), the air temperature inside the chamber is sensed by the temperature sensor installed in the chamber (S 208), and the controller detects the temperature The temperature distribution in the chamber is determined by the temperature signal, and a control signal for controlling the power supplied to the heater is output (S 210). Thereafter, the temperature inside the chamber is uniformly maintained by controlling the power supplied to the heaters installed at the corners according to the control signal of the controller (S 212).
그러므로 챔버 내부의 공기 온도를 균일하게 유지하여 균일한 온도 분포를 가지는 고온의 공기를 통해 웨이퍼로 열이 전달됨에 따라 웨이퍼의 표면에 도포된 감광막을 균일하게 경화시킬 수 있는 것이다. Therefore, as the heat is transferred to the wafer through the hot air having a uniform temperature distribution by maintaining the air temperature inside the chamber uniformly, the photosensitive film applied to the surface of the wafer can be uniformly cured.
이상에서 설명한 바와 같이, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하므로 전술한 실시예 및 첨부된 도면에 한정되는 것은 아니다. As described above, various substitutions, modifications, and changes can be made by those skilled in the art without departing from the technical spirit of the present invention, and thus, the embodiments and the accompanying drawings are limited. It doesn't happen.
상술한 바와 같이, 본원발명은 포토레지스트를 사용하는 모든 박막 센서 제조, 반도체 장비 제조 등에 이용될 수 있는 것이다.As described above, the present invention can be used for manufacturing all thin film sensors using photoresist, manufacturing semiconductor equipment, and the like.

Claims (5)

  1. 자기박막센서 제조를 위한 베이킹 장치에 있어서,In the baking apparatus for manufacturing a magnetic thin film sensor,
    베이킹 공정이 수행되는 챔버 내부의 하단부에 설치되고, 챔버 내부의 공기를 가열하는 복수개의 히터들과; A plurality of heaters installed at a lower end of the inside of the chamber in which the baking process is performed and for heating air in the chamber;
    상기 챔버 내부에 설치되고, 챔버 내부의 온도를 감지하는 온도감지센서와; A temperature sensor installed inside the chamber and sensing a temperature inside the chamber;
    상기 온도감지센서와 연결되고, 온도감지센서에서 감지된 온도 신호를 분석하고, 상기 챔버 내부의 온도를 균일하게 유지하기 위해 히터에 공급되는 전원을 제어하는 제어부와; A control unit connected to the temperature sensor and configured to analyze a temperature signal detected by the temperature sensor and to control power supplied to the heater to maintain a uniform temperature in the chamber;
    상기 제어부와 연결되고, 제어부에서 출력된 제어 신호에 따라 히터에 전원을 공급하는 전원공급장치와; A power supply device connected to the control unit and supplying power to the heater according to a control signal output from the control unit;
    상기 챔버 내부에 놓여지는 틀 및 웨이퍼를 지지하도록 판; 을 포함하며, 상기 히터들에 의해 가열된 챔버 내부의 공기를 대류방식에 의해 균일하게 웨이퍼를 경화시키는 것을 특징으로 하는 자기박막센서 제조를 위한 베이킹 장치.A plate for supporting a mold and a wafer placed inside the chamber; And baking the wafers by the convection method of air inside the chamber heated by the heaters.
  2. 제 1항에 있어서, The method of claim 1,
    상기 제어부는 상기 온도감지센서와 연결되고, 온도감지센서에서 감지된 챔버 내부의 온도 신호를 아날로그 신호에서 디지털 신호로 변환하는 입력장치와; 상기 입력장치와 연결되고, 입력장치에서 변환된 온도 신호를 분석하여 히터에 공급되는 전원을 제어하기 위한 제어 신호를 출력하는 제어장치와; 상기 제어장치와 연결되고, 제어 장치에서 출력된 제어신호를 디지털 신호에서 아날로그 신호로 변환하는 출력장치를 포함하는 것을 특징으로 하는 자기박막센서 제조를 위한 베이킹 장치.The control unit is connected to the temperature sensor, the input device for converting the temperature signal inside the chamber detected by the temperature sensor in the analog signal to a digital signal; A control device connected to the input device and outputting a control signal for controlling power supplied to the heater by analyzing a temperature signal converted by the input device; And an output device connected to the control device and converting the control signal output from the control device into a digital signal to an analog signal.
  3. 제 1항에 있어서, The method of claim 1,
    상기 판의 높이는 판의 상부면에 놓여지는 틀이 상기 베이킹 챔버 내부의 중앙에 위치되도록 설치되는 것을 특징으로 하는 자기박막센서 제조를 위한 베이킹 장치.The height of the plate is a baking apparatus for manufacturing a magnetic thin film sensor, characterized in that the frame placed on the upper surface of the plate is installed in the center of the inside of the baking chamber.
  4. 제 1항에 있어서, The method of claim 1,
    상기 틀은 웨이퍼(W)에 전달되는 공기의 온도를 균일하게 하기 위해 입방형의 챔버 내부의 중앙에 위치하게 되는 것을 특징으로 하는 자기박막센서 제조를 위한 베이킹 장치.The mold is a baking apparatus for manufacturing a magnetic thin film sensor, characterized in that located in the center of the interior of the cubic chamber to uniform the temperature of the air delivered to the wafer (W).
  5. 자기박막센서 제조를 위한 베이킹 방법에 있어서, In the baking method for manufacturing a magnetic thin film sensor,
    틀에 고정된 웨이퍼가 챔버 내부에 설치되어 있는 웨이퍼를 지지하기 위한 플레이트 위에 올려지는 웨이퍼 삽입 단계와; A wafer insertion step of placing a wafer fixed in the frame on a plate for supporting a wafer installed in the chamber;
    상기 챔버 내부의 각 모서리에 설치되어 있는 히터에 전원이 공급되어 챔버 내부 공기의 온도가 상승하게 하는 챔버 내부의 공기 가열 단계와; An air heating step in the chamber for supplying power to a heater installed at each corner of the chamber to increase the temperature of the air in the chamber;
    상기 챔버 내부 공기의 온도가 기설정된 온도로 가열되어 웨이퍼에 도포된 감광막의 경화가 진행되게 하는 대류에 의한 베이크 진행 단계와; A baking progress step by convection in which the temperature of the air in the chamber is heated to a predetermined temperature to cause curing of the photosensitive film applied to the wafer;
    상기 베이킹 공정의 진행 시간을 판단하는 단계와; Determining an advancing time of the baking process;
    상기 베이킹 공정의 진행 시간을 체크하여 기설정된 시간에 도달하면, 히터로 공급되는 전원을 중단시키고, 웨이퍼를 제거시킨 후 베이킹 공정이 종료하며, 상기 베이킹 공정의 진행 시간이 기설정된 시간에 도달하지 않으면, 챔버 내부에 설치된 온도감지센서에 의해 챔버 내부의 공기 온도를 감지하고, 제어부에서 온도감지센서에서 감지된 온도신호에 의해 챔버 내부의 온도 분포를 판단하고 히터에 공급되는 전원을 제어하기 위한 제어신호를 출력하며, 상기 제어부의 제어 신호에 따라 각 모서리에 설치된 히터에 공급되는 전원을 제어하여 챔버 내부의 온도를 균일하게 유지하는 히터의 전원 조절 단계; 를 포함하는 것을 특징으로 하는 자기박막센서 제조를 위한 베이킹 방법.When the progress time of the baking process is checked and the preset time is reached, the power supply to the heater is stopped, the baking process is terminated after removing the wafer, and when the progress time of the baking process does not reach the preset time In order to detect the air temperature inside the chamber by the temperature sensor installed inside the chamber, the control unit determines the temperature distribution inside the chamber by the temperature signal detected by the temperature sensor and controls the power supplied to the heater. A power supply adjusting step of controlling a power supplied to a heater installed at each corner according to a control signal of the controller to maintain a uniform temperature inside the chamber; Baking method for manufacturing a magnetic thin film sensor comprising a.
PCT/KR2010/001390 2009-05-25 2010-03-05 Baking device for preparing magnetic thin film sensor and method thereof WO2010137793A1 (en)

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CN108327138A (en) * 2018-03-22 2018-07-27 北京创昱科技有限公司 A kind of solar energy film baking chamber
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