WO2010121068A3 - Improved apparatus for temporary wafer bonding and debonding - Google Patents

Improved apparatus for temporary wafer bonding and debonding Download PDF

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Publication number
WO2010121068A3
WO2010121068A3 PCT/US2010/031302 US2010031302W WO2010121068A3 WO 2010121068 A3 WO2010121068 A3 WO 2010121068A3 US 2010031302 W US2010031302 W US 2010031302W WO 2010121068 A3 WO2010121068 A3 WO 2010121068A3
Authority
WO
WIPO (PCT)
Prior art keywords
debonder
temporary
wafer bonding
bonding
cluster
Prior art date
Application number
PCT/US2010/031302
Other languages
French (fr)
Other versions
WO2010121068A2 (en
Inventor
Gregory George
Hale Johnson
Patrick Gorun
Emmett Hughlett
James Hermanowski
Matthew Stiles
Michael Kuhnle
Dennis Patricio
Original Assignee
Suss Microtec, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suss Microtec, Inc. filed Critical Suss Microtec, Inc.
Priority to CN2010800268299A priority Critical patent/CN102460677A/en
Priority to JP2012505938A priority patent/JP5439583B2/en
Priority to EP10765211A priority patent/EP2419928A2/en
Publication of WO2010121068A2 publication Critical patent/WO2010121068A2/en
Publication of WO2010121068A3 publication Critical patent/WO2010121068A3/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006Delaminating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08Dimensions, e.g. volume
    • B32B2309/10Dimensions, e.g. volume linear, e.g. length, distance, width
    • B32B2309/105Thickness
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/18Handling of layers or the laminate
    • B32B38/1858Handling of layers or the laminate using vacuum
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/93Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S156/931Peeling away backing
    • Y10S156/932Peeling away backing with poking during delaminating, e.g. jabbing release sheet backing to remove wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Press Drives And Press Lines (AREA)

Abstract

An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.
PCT/US2010/031302 2009-04-16 2010-04-15 Improved apparatus for temporary wafer bonding and debonding WO2010121068A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800268299A CN102460677A (en) 2009-04-16 2010-04-15 Improved apparatus for temporary wafer bonding and debonding
JP2012505938A JP5439583B2 (en) 2009-04-16 2010-04-15 Improved apparatus for temporary wafer bonding and debonding
EP10765211A EP2419928A2 (en) 2009-04-16 2010-04-15 Improved apparatus for temporary wafer bonding and debonding

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16975309P 2009-04-16 2009-04-16
US61/169,753 2009-04-16

Publications (2)

Publication Number Publication Date
WO2010121068A2 WO2010121068A2 (en) 2010-10-21
WO2010121068A3 true WO2010121068A3 (en) 2011-01-13

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ID=42980095

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Application Number Title Priority Date Filing Date
PCT/US2010/031302 WO2010121068A2 (en) 2009-04-16 2010-04-15 Improved apparatus for temporary wafer bonding and debonding

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US (5) US8267143B2 (en)
EP (1) EP2419928A2 (en)
JP (2) JP5439583B2 (en)
KR (1) KR20120027237A (en)
CN (1) CN102460677A (en)
WO (1) WO2010121068A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8950459B2 (en) * 2009-04-16 2015-02-10 Suss Microtec Lithography Gmbh Debonding temporarily bonded semiconductor wafers
US8366873B2 (en) * 2010-04-15 2013-02-05 Suss Microtec Lithography, Gmbh Debonding equipment and methods for debonding temporary bonded wafers
DE102009018156A1 (en) * 2009-04-21 2010-11-18 Ev Group Gmbh Apparatus and method for separating a substrate from a carrier substrate
US20100314149A1 (en) 2009-06-10 2010-12-16 Medtronic, Inc. Hermetically-sealed electrical circuit apparatus
US8871609B2 (en) * 2009-06-30 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Thin wafer handling structure and method
US9305769B2 (en) 2009-06-30 2016-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thin wafer handling method
CN102934217A (en) * 2009-12-23 2013-02-13 休斯微技术光刻有限公司 Automated thermal slide debonder
EP2553719B1 (en) 2010-03-31 2019-12-04 Ev Group E. Thallner GmbH Method for producing a wafer provided with chips using two separately detachable carrier wafers with ring-shaped adhesive layers of different ring widths
US9064686B2 (en) * 2010-04-15 2015-06-23 Suss Microtec Lithography, Gmbh Method and apparatus for temporary bonding of ultra thin wafers
US9837295B2 (en) * 2010-04-15 2017-12-05 Suss Microtec Lithography Gmbh Apparatus and method for semiconductor wafer leveling, force balancing and contact sensing
US9859141B2 (en) * 2010-04-15 2018-01-02 Suss Microtec Lithography Gmbh Apparatus and method for aligning and centering wafers
JP5374462B2 (en) * 2010-08-23 2013-12-25 東京エレクトロン株式会社 Peeling system, peeling method, program, and computer storage medium
DE102010048043A1 (en) * 2010-10-15 2012-04-19 Ev Group Gmbh Apparatus and method for processing wafers
US8666505B2 (en) 2010-10-26 2014-03-04 Medtronic, Inc. Wafer-scale package including power source
US9171721B2 (en) 2010-10-26 2015-10-27 Medtronic, Inc. Laser assisted direct bonding
US8415805B2 (en) * 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
US8796109B2 (en) 2010-12-23 2014-08-05 Medtronic, Inc. Techniques for bonding substrates using an intermediate layer
US8424388B2 (en) 2011-01-28 2013-04-23 Medtronic, Inc. Implantable capacitive pressure sensor apparatus and methods regarding same
TWI557786B (en) * 2011-02-28 2016-11-11 道康寧公司 Wafer bonding system and method for bonding and debonding thereof
US9296193B2 (en) 2011-04-11 2016-03-29 Ev Group E. Thallner Gmbh Bendable carrier mount, device and method for releasing a carrier substrate
WO2012140988A1 (en) * 2011-04-12 2012-10-18 東京エレクトロン株式会社 Separation method, separation device, and separation system
US9227295B2 (en) 2011-05-27 2016-01-05 Corning Incorporated Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer
JP2013008915A (en) * 2011-06-27 2013-01-10 Toshiba Corp Substrate processing method and substrate processing apparatus
FR2980280B1 (en) * 2011-09-20 2013-10-11 Soitec Silicon On Insulator METHOD FOR SEPARATING A LAYER IN A COMPOSITE STRUCTURE
US9393669B2 (en) * 2011-10-21 2016-07-19 Strasbaugh Systems and methods of processing substrates
US8858756B2 (en) * 2011-10-31 2014-10-14 Masahiro Lee Ultrathin wafer debonding systems
KR101869922B1 (en) * 2011-11-28 2018-06-22 삼성디스플레이 주식회사 Vacuum peeling apparatus and method
US11264262B2 (en) * 2011-11-29 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer debonding and cleaning apparatus
US9390949B2 (en) 2011-11-29 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer debonding and cleaning apparatus and method of use
US10381254B2 (en) * 2011-11-29 2019-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer debonding and cleaning apparatus and method
EP2795669B1 (en) 2011-12-22 2020-06-17 EV Group E. Thallner GmbH Flexible substrate holder, device and method for detaching a first substrate
JP2013147622A (en) * 2012-01-23 2013-08-01 Nitto Denko Corp Method for separating two stuck plates
KR20140128355A (en) * 2012-01-30 2014-11-05 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Apparatus, hybrid laminated body, method, and materials for temporary substrate support
WO2013119976A1 (en) * 2012-02-08 2013-08-15 Brewer Science Inc. Fluorinated silane coating compositions for thin wafer bonding and handling
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
JP6055597B2 (en) * 2012-02-09 2016-12-27 東京応化工業株式会社 Sticking method and sticking device
KR101223633B1 (en) * 2012-02-20 2013-01-17 코스텍시스템(주) Method for bonding and debonding between device wafer and carrier wafer for semiconductor manufacturing
JP5687647B2 (en) * 2012-03-14 2015-03-18 株式会社東芝 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
JP5591859B2 (en) * 2012-03-23 2014-09-17 株式会社東芝 Substrate separation method and separation apparatus
US8697542B2 (en) 2012-04-12 2014-04-15 The Research Foundation Of State University Of New York Method for thin die-to-wafer bonding
US9111982B2 (en) * 2012-04-25 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer assembly with carrier wafer
JP5752639B2 (en) * 2012-05-28 2015-07-22 東京エレクトロン株式会社 Joining system, joining method, program, and computer storage medium
US8945344B2 (en) 2012-07-20 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of separating bonded wafers
US8963336B2 (en) 2012-08-03 2015-02-24 Samsung Electronics Co., Ltd. Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
KR101970291B1 (en) 2012-08-03 2019-04-18 삼성전자주식회사 Methods of manufacturing semiconductor packages
CN103035482B (en) * 2012-08-15 2016-04-13 上海华虹宏力半导体制造有限公司 The interim bonding method of silicon chip
US9610669B2 (en) 2012-10-01 2017-04-04 Strasbaugh Methods and systems for use in grind spindle alignment
US9457446B2 (en) 2012-10-01 2016-10-04 Strasbaugh Methods and systems for use in grind shape control adaptation
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
US9636782B2 (en) 2012-11-28 2017-05-02 International Business Machines Corporation Wafer debonding using mid-wavelength infrared radiation ablation
US20140144593A1 (en) 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
US9543197B2 (en) * 2012-12-19 2017-01-10 Intel Corporation Package with dielectric or anisotropic conductive (ACF) buildup layer
KR102075635B1 (en) * 2013-01-03 2020-03-02 삼성전자주식회사 Wafer supporting structure, intermediate structure of a semiconductor package including the wafer supporting structure and method of manufacturing the semiconductor package using the intermediate structure
KR102077248B1 (en) 2013-01-25 2020-02-13 삼성전자주식회사 Methods for processing substrates
WO2014165406A1 (en) * 2013-04-01 2014-10-09 Brewer Science Inc. Apparatus and method for thin wafer transfer
WO2014168578A1 (en) * 2013-04-10 2014-10-16 Applied Materials South East Asia Pte. Ltd. Wafer bonding total thickness variation improvement by contour confinement method
JP2015023137A (en) * 2013-07-18 2015-02-02 株式会社ディスコ Peeling apparatus and peeling method
TWI610374B (en) * 2013-08-01 2018-01-01 格芯公司 Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release
JP6182491B2 (en) 2013-08-30 2017-08-16 富士フイルム株式会社 Laminate and its application
JP6188495B2 (en) * 2013-08-30 2017-08-30 富士フイルム株式会社 Laminate and its application
JP6096085B2 (en) * 2013-08-30 2017-03-15 富士フイルム株式会社 Laminate and its application
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
TW201539645A (en) * 2014-01-20 2015-10-16 Suss Microtec Lithography Gmbh System and method for substrate holding
US9349629B2 (en) * 2014-01-23 2016-05-24 Lam Research Corporation Touch auto-calibration of process modules
US10160209B2 (en) 2014-01-28 2018-12-25 Hewlett-Packard Development Company, L.P. Flexible carrier for fluid flow structure
US9355881B2 (en) * 2014-02-18 2016-05-31 Infineon Technologies Ag Semiconductor device including a dielectric material
US9333735B2 (en) 2014-04-03 2016-05-10 Globalfoundries Inc. Methods for operating a debonder
WO2015197132A1 (en) * 2014-06-27 2015-12-30 Erich Thallner Sample holder, device and method for removing a first substrate
CN104051308B (en) * 2014-06-27 2017-05-24 广东先导先进材料股份有限公司 Chip stripping device and system and device for controlling chip stripping
US9475272B2 (en) 2014-10-09 2016-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. De-bonding and cleaning process and system
US20160133486A1 (en) 2014-11-07 2016-05-12 International Business Machines Corporation Double Layer Release Temporary Bond and Debond Processes and Systems
US9865533B2 (en) 2014-12-24 2018-01-09 Medtronic, Inc. Feedthrough assemblies
US9968794B2 (en) 2014-12-24 2018-05-15 Medtronic, Inc. Implantable medical device system including feedthrough assembly and method of forming same
US10136535B2 (en) 2014-12-24 2018-11-20 Medtronic, Inc. Hermetically-sealed packages including feedthrough assemblies
US10124559B2 (en) 2014-12-24 2018-11-13 Medtronic, Inc. Kinetically limited nano-scale diffusion bond structures and methods
CN104503623A (en) * 2015-01-06 2015-04-08 合肥鑫晟光电科技有限公司 Method and system for separating touch panel from display module
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
KR20170126899A (en) * 2015-03-11 2017-11-20 엔브이 베카에르트 에스에이 Temporarily bonded wafer carrier
US10718606B2 (en) * 2015-04-17 2020-07-21 Nikon Corporation Determination of customized components for fitting wafer profile
US10052859B2 (en) * 2015-05-01 2018-08-21 Euna Park Apparatus and method for reclaiming curved and bendable display screens
US11183401B2 (en) 2015-05-15 2021-11-23 Suss Microtec Lithography Gmbh System and related techniques for handling aligned substrate pairs
US10825705B2 (en) 2015-05-15 2020-11-03 Suss Microtec Lithography Gmbh Apparatus, system, and method for handling aligned wafer pairs
CN105023850B (en) * 2015-07-21 2018-02-23 华进半导体封装先导技术研发中心有限公司 Total-reflection laser tears bonding method open
WO2017079377A1 (en) * 2015-11-03 2017-05-11 Board Of Regents, The University Of Texas System Systems and methods for passive alignment of semiconductor wafers
US10384433B2 (en) * 2015-12-11 2019-08-20 Suma Consulting and Investments, Inc. Apparatus and method to extract an object from a base surface using vibration
US10098589B2 (en) 2015-12-21 2018-10-16 Medtronic, Inc. Sealed package and method of forming same
DE102017103212B4 (en) * 2016-02-24 2024-01-25 Suss Microtec Lithography Gmbh Semiconductor structure bonding device and related techniques
WO2017168531A1 (en) * 2016-03-28 2017-10-05 株式会社ニコン Substrate bonding device and substrate bonding method
CN107293504B (en) * 2016-03-31 2020-05-01 上海微电子装备(集团)股份有限公司 Bonding heating control device and method thereof
US10373858B2 (en) 2016-04-06 2019-08-06 Lam Research Corporation Chuck for edge bevel removal and method for centering a wafer prior to edge bevel removal
DE102016106351A1 (en) 2016-04-07 2017-10-12 Ev Group E. Thallner Gmbh Method and device for bonding two substrates
CN105789059B (en) * 2016-04-19 2018-08-03 浙江中纳晶微电子科技有限公司 The method detached after wafer bonding
USD815159S1 (en) * 2016-05-16 2018-04-10 Cost Effective Equipment Llc Mechanical debonder
JP6700130B2 (en) * 2016-07-12 2020-05-27 東京エレクトロン株式会社 Joining system
CN107665848B (en) * 2016-07-29 2020-08-25 上海微电子装备(集团)股份有限公司 Debonding and leveling device and debonding method
JP6707420B2 (en) * 2016-08-09 2020-06-10 東京エレクトロン株式会社 Joining device and joining system
US10663434B2 (en) * 2017-03-31 2020-05-26 Sonix, Inc. Wafer chuck
JP6980421B2 (en) * 2017-06-16 2021-12-15 株式会社ディスコ Wafer processing method
US10381404B2 (en) 2017-08-07 2019-08-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with memory cells and methods for producing the same
US10403598B2 (en) 2017-08-11 2019-09-03 Micron Technology, Inc. Methods and system for processing semiconductor device structures
US10170443B1 (en) 2017-11-28 2019-01-01 International Business Machines Corporation Debonding chips from wafer
CN107946407A (en) * 2017-11-29 2018-04-20 北京创昱科技有限公司 A kind of new thin film separation mechanism independently driven
WO2019106846A1 (en) * 2017-12-01 2019-06-06 日立化成株式会社 Semiconductor device manufacturing method, resin composition for temporary fixation material, laminated film for temporary fixation material
KR102505213B1 (en) * 2017-12-08 2023-03-03 삼성전자주식회사 Seperating electronic device and process method thereby
US10665494B2 (en) 2018-01-31 2020-05-26 Applied Materials, Inc. Automated apparatus to temporarily attach substrates to carriers without adhesives for processing
JP7042667B2 (en) * 2018-03-28 2022-03-28 古河電気工業株式会社 Manufacturing method of semiconductor chip
CN110349878A (en) * 2018-04-02 2019-10-18 锡宬国际有限公司 Slim wafer communication front-end equipment and the slim wafer front end processing method for applying it
TWI681500B (en) * 2018-10-26 2020-01-01 志聖工業股份有限公司 Wafer process equipment and method for processing wafer
CN109273389A (en) * 2018-11-01 2019-01-25 苏州展德自动化设备有限公司 Wafer with protection paper automatic stripping equipment
CN111385917B (en) * 2018-12-29 2022-07-15 中微半导体设备(上海)股份有限公司 Multi-plane multi-path temperature-adjustable heater for assembling ESC
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
KR102640172B1 (en) 2019-07-03 2024-02-23 삼성전자주식회사 Processing apparatus for a substrate and method of driving the same
KR20210072392A (en) 2019-12-09 2021-06-17 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Adhesive film
US11107716B1 (en) * 2020-02-06 2021-08-31 Pyxis Cf Pte. Ltd. Automation line for processing a molded panel
CN111916384B (en) * 2020-08-17 2022-05-17 鑫天虹(厦门)科技有限公司 Bonding machine alignment module and bonding machine
US11996384B2 (en) * 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
KR102585352B1 (en) * 2021-02-02 2023-10-06 주식회사 플래닝썬 A method of handling thin wafer using foam tape
KR20230116016A (en) 2021-02-04 2023-08-03 미쓰비시덴키 가부시키가이샤 Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
US20230067088A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature controllable bonder equipment for substrate bonding
CN113838777B (en) * 2021-09-03 2023-08-25 北京中科镭特电子有限公司 Detection control system for laser de-bonding
KR20230114922A (en) * 2022-01-26 2023-08-02 주식회사 엘지화학 Adhesive composition for use of semiconductor process, film for use of semiconductor process comprising adhesive composition, and manufacturing method for semiconductor package using the same
CN115291477B (en) * 2022-08-26 2023-07-25 苏师大半导体材料与设备研究院(邳州)有限公司 Semiconductor manufacturing wafer lithography equipment
CN115939008B (en) * 2023-01-06 2023-05-30 无锡先为科技有限公司 Wafer correction mechanism and semiconductor manufacturing equipment
CN116825698A (en) * 2023-08-07 2023-09-29 江苏双晶新能源科技有限公司 Operation method for automatic loading material box of degumming machine

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197724A (en) * 2001-12-28 2003-07-11 Mitsubishi Electric Corp Apparatus and method for separating pasted wafer
KR20050004904A (en) * 2002-06-03 2005-01-12 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
KR20050033440A (en) * 2003-10-06 2005-04-12 닛토덴코 가부시키가이샤 Method of separating semiconductor wafer, and separating apparatus using the same
KR20060028439A (en) * 2003-07-02 2006-03-29 동경 엘렉트론 주식회사 Joining method and joining device
KR20060031701A (en) * 2003-07-29 2006-04-12 동경 엘렉트론 주식회사 Laminating method and laminating device

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046985A (en) * 1974-11-25 1977-09-06 International Business Machines Corporation Semiconductor wafer alignment apparatus
US5427644A (en) * 1993-01-11 1995-06-27 Tokyo Seimitsu Co., Ltd. Method of manufacturing semiconductor wafer and system therefor
JP2862754B2 (en) * 1993-04-19 1999-03-03 東京エレクトロン株式会社 Processing device and rotating member
US5466325A (en) * 1993-06-02 1995-11-14 Nitto Denko Corporation Resist removing method, and curable pressure-sensitive adhesive, adhesive sheets and apparatus used for the method
KR0165467B1 (en) * 1995-10-31 1999-02-01 김광호 Wafer debonder and wafer debonding method using the wafer debonder
CA2232796C (en) * 1997-03-26 2002-01-22 Canon Kabushiki Kaisha Thin film forming process
US6149758A (en) * 1997-06-20 2000-11-21 Lintec Corporation Sheet removing apparatus and method
US6540861B2 (en) * 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
US6672358B2 (en) * 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
JP2000150836A (en) * 1998-11-06 2000-05-30 Canon Inc Processing system for sample
EP1214118B2 (en) * 1999-04-29 2013-11-27 Peter James Brian Lamb Device for depositing a non-flowable object or a non-flowable medicament in a vagina
US6221740B1 (en) * 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
DE10008111A1 (en) * 2000-02-22 2001-08-23 Krauss Maffei Kunststofftech Device for vacuum pressing DVD substrates
US6485248B1 (en) * 2000-10-10 2002-11-26 Applied Materials, Inc. Multiple wafer lift apparatus and associated method
US6827092B1 (en) * 2000-12-22 2004-12-07 Lam Research Corporation Wafer backside plate for use in a spin, rinse, and dry module and methods for making and implementing the same
AT502233B1 (en) 2001-06-07 2007-04-15 Thallner Erich Carrier detachment device aligns inner, near-edge surface of frame with semiconductor disk and bonds them to foil, before detaching disk from carrier
US6638835B2 (en) 2001-12-11 2003-10-28 Intel Corporation Method for bonding and debonding films using a high-temperature polymer
US7367773B2 (en) 2002-05-09 2008-05-06 Maxtor Corporation Apparatus for combining or separating disk pairs simultaneously
CN1703773B (en) * 2002-06-03 2011-11-16 3M创新有限公司 Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US7187162B2 (en) * 2002-12-16 2007-03-06 S.O.I.Tec Silicon On Insulator Technologies S.A. Tools and methods for disuniting semiconductor wafers
JP4592270B2 (en) * 2003-10-06 2010-12-01 日東電工株式会社 Method for peeling semiconductor wafer from support and apparatus using the same
JP2006316078A (en) * 2003-10-17 2006-11-24 Lintec Corp Method and apparatus for peeling adhesive tape
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
JP4326418B2 (en) * 2004-07-16 2009-09-09 株式会社東京精密 Film peeling method and film peeling apparatus
WO2006020685A2 (en) * 2004-08-11 2006-02-23 Cornell Research Foundation, Inc. Modular fabrication systems and methods
JP4792719B2 (en) * 2004-08-25 2011-10-12 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP4401322B2 (en) * 2005-04-18 2010-01-20 日東電工株式会社 Support plate separation apparatus and support plate separation method using the same
US7462552B2 (en) * 2005-05-23 2008-12-09 Ziptronix, Inc. Method of detachable direct bonding at low temperatures
US7589406B2 (en) 2005-06-27 2009-09-15 Micron Technology, Inc. Stacked semiconductor component
DE102005055769A1 (en) * 2005-11-21 2007-05-24 Tesa Ag Method for the temporary fixation of a polymeric layer material on rough surfaces
JP4781802B2 (en) * 2005-12-06 2011-09-28 東京応化工業株式会社 Support plate laminating means and laminating apparatus, and support plate laminating method
JP4687566B2 (en) * 2006-05-24 2011-05-25 ティアック株式会社 Disk unit
DE102006031434B4 (en) 2006-07-07 2019-11-14 Erich Thallner Handling device and handling method for wafers
JP4666514B2 (en) * 2006-07-20 2011-04-06 リンテック株式会社 Sheet peeling apparatus and peeling method
JP5461760B2 (en) * 2006-07-26 2014-04-02 株式会社カネカ Semiconductor manufacturing apparatus and semiconductor manufacturing method
US20080200011A1 (en) 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
JP2008153337A (en) * 2006-12-15 2008-07-03 Tokyo Electron Ltd Method and device for separating laminated substrate, and computer readable recording medium with program recorded thereon
JP2008182016A (en) * 2007-01-24 2008-08-07 Tokyo Electron Ltd Sticking apparatus and method
US20080302481A1 (en) 2007-06-07 2008-12-11 Tru-Si Technologies, Inc. Method and apparatus for debonding of structures which are bonded together, including (but not limited to) debonding of semiconductor wafers from carriers when the bonding is effected by double-sided adhesive tape
US7935780B2 (en) 2007-06-25 2011-05-03 Brewer Science Inc. High-temperature spin-on temporary bonding compositions
FR2925978B1 (en) 2007-12-28 2010-01-29 Commissariat Energie Atomique METHOD AND DEVICE FOR SEPARATING A STRUCTURE
CN101925996B (en) 2008-01-24 2013-03-20 布鲁尔科技公司 Method for reversibly mounting device wafer to carrier substrate
DE102008018536B4 (en) 2008-04-12 2020-08-13 Erich Thallner Device and method for applying and / or detaching a wafer to / from a carrier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197724A (en) * 2001-12-28 2003-07-11 Mitsubishi Electric Corp Apparatus and method for separating pasted wafer
KR20050004904A (en) * 2002-06-03 2005-01-12 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
KR20060028439A (en) * 2003-07-02 2006-03-29 동경 엘렉트론 주식회사 Joining method and joining device
KR20060031701A (en) * 2003-07-29 2006-04-12 동경 엘렉트론 주식회사 Laminating method and laminating device
KR20050033440A (en) * 2003-10-06 2005-04-12 닛토덴코 가부시키가이샤 Method of separating semiconductor wafer, and separating apparatus using the same

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