CN107293504B - Bonding heating control device and method thereof - Google Patents
Bonding heating control device and method thereof Download PDFInfo
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- CN107293504B CN107293504B CN201610200573.8A CN201610200573A CN107293504B CN 107293504 B CN107293504 B CN 107293504B CN 201610200573 A CN201610200573 A CN 201610200573A CN 107293504 B CN107293504 B CN 107293504B
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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Abstract
The invention provides a bonding heating control device and a method thereof, wherein the device comprises a heating controller, two heating devices and two heating driving devices; the heating device is used for heating and pressurizing the silicon chip or the glass chip, and a heater and at least two temperature sensors are arranged in the heating device; the heating controller is used for measuring each temperature sensor in the two heating devices and outputting PWM opening degree of the heater; the heating driving device drives the heater to work according to the PWM opening degree output by the heating controller; the two heating devices work simultaneously and are mutually independent, so that the heating time is saved, the heating efficiency is improved, the graphite sheets are respectively arranged on the upper side and the lower side of the heating plate, the temperature is uniformly spread, the heating process is divided into three stages, the heating time is shortened and the yield is improved through the rapid heating in the rate heating stage; and the adjustable power of the heating rate stage is realized, and more process parameters are provided for the bonding process.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a bonding heating control device and a bonding heating control method.
Background
Two wafers with flat and clean surfaces can be combined with each other through chemical bonds on the surfaces under certain conditions without the limitation of crystal lattices and crystal orientations of two wafer materials, and the technology is called as wafer bonding technology. The bonding technology has great freedom in combining new structural materials, and is widely used in microelectronic circuit, sensor, power device, micro machining, photoelectronic device, Silicon On Insulator (SOI) and other fields. Wafer bonding technology has become a technology that can be used to fabricate many important optoelectronic devices.
Wafer bonding techniques can bond wafers of different materials together. Wafer bonding is an important process for three-dimensional processing of semiconductor devices, and regardless of the type of wafer bonding, the main process steps of wafer bonding include processing (cleaning, activating) of the wafer surface, alignment of the wafer, and final wafer bonding. Through these process steps, individual wafers are aligned and then bonded together to achieve their three-dimensional structure. Bonding is not only a packaging technique in microsystem technology, but also an organic component in three-dimensional device fabrication, and has applications in both the previous and subsequent processes of device fabrication. The most prominent bonding applications in existence are silicon wafer to silicon wafer bonding and silicon wafer to glass substrate bonding.
In the wafer bonding process, materials such as a silicon wafer and a glass substrate are generally heated to a certain temperature in a vacuum environment, and bonded by applying a certain pressure for a certain time. In this process, the time to heat the material to a given temperature is about 20% of the total process. Therefore, shortening the heating time has a great influence on improving the yield. In addition, in the heating and pressurizing process, the heating stability is improved, the temperature oscillation is reduced, the material deformation can be reduced, and the bonding precision is improved.
Therefore, how to shorten the heating time and improve the heating stability is a problem to be solved in the wafer bonding process.
Disclosure of Invention
The invention aims to provide a bonding heating control device and a method thereof, which solve the problems of overlong heating time, unstable heating and oscillating heating temperature in the prior art.
In order to achieve the above and other related objects, the present invention provides a bonding heating control device, which includes a heating controller, two heating devices and two heating driving devices;
the heating device is used for heating and pressurizing a silicon wafer or a glass sheet, and a heater and at least two temperature sensors are arranged in the heating device;
the heating controller is used for measuring each temperature sensor in the two heating devices and respectively outputting the PWM opening degree of the heater;
and the heating driving device drives the heater to work according to the PWM opening degree output by the heating controller.
Optionally, the bonding apparatus further comprises a human-machine interface, wherein the human-machine interface is used for setting device parameters to start or stop the bonding process.
Optionally, the device parameters include: a heater PWM opening set value, a ratio of a heating rate to the heater PWM opening set value, and PID parameters.
Optionally, the heating device sequentially includes: pressure disk, first graphite flake, heating plate, second graphite flake, ceramic dish and base.
Optionally, an electric heater is arranged in the heating plate.
Optionally, temperature sensors are disposed between the pressure plate and the first graphite sheet and between the heater and the second graphite sheet.
The invention also provides a bonding heating control method, which comprises the following steps:
step S01: the heating controller measures the temperature of a temperature sensor in the heating device and outputs the PWM opening degree of a heater in the heating device;
step S02: the heating driving device drives the heater to work according to the PWM opening degree output by the heating controller;
step S03: the heating device heats and pressurizes the silicon wafer or the glass sheet.
Optionally, the heating controller outputs PWM opening degrees of heaters in the two heating devices, the two heating driving devices drive the two heaters to work, and the two heating devices work simultaneously but are independent of each other.
Optionally, according to the magnitude of the temperature deviation value of the heater, the heating process of the heater is divided into three stages: a rate heating stage, a coarse temperature adjusting stage and a fine temperature adjusting stage.
Optionally, in the rate heating stage, a ratio of the heating rate to a set value of the PWM opening of the heater is calculated according to an experiment and is used as a parameter setting for the bonding heating control.
Optionally, in the coarse temperature adjustment stage, a PID control algorithm is adopted, and the PID parameter and the amplitude limiting range of the heater PWM opening setting value are set as parameters for bonding heating control.
Optionally, in the temperature fine tuning stage, a PID control algorithm is adopted, and the PID parameter and the amplitude limiting range of the heater PWM opening setting value are set as parameters for bonding heating control.
Compared with the prior art, the bonding heating control device and the method thereof provided by the invention have the following beneficial effects:
1. according to the bonding heating control device provided by the invention, the temperature of each temperature sensor in the two heating devices is measured through the heating controller, the PWM opening degrees of the heaters in the two heating devices are respectively output, the two heating driving devices respectively drive the two heaters to work according to the two PWM opening degrees output by the heating controller, and the two heating devices respectively heat and pressurize a silicon wafer or a glass wafer, so that the two heating devices work simultaneously and are mutually independent, the heating time is saved, and the heating efficiency is improved;
2. according to the heating device provided by the invention, the graphite sheets are respectively arranged on the upper side and the lower side of the heating plate, so that the temperature is uniformly spread; the method comprises the following steps that a pressure plate temperature sensor is arranged between a pressure plate and a first graphite sheet, a heating plate temperature sensor is arranged between a heating plate and a second graphite sheet, the heating plate temperature sensor is selected as a feedback control point, the output of a heater can be quickly responded, the pressure plate temperature sensor is selected as a process evaluation point, the smooth output of the temperature in the process flow can be realized, the influence of the heating control oscillation effect is avoided, and the bonding precision is improved;
3. according to the bonding heating control method provided by the invention, the heating process of the heater is divided into three stages, the heating time is shortened and the yield is improved by the rapid heating in the rate heating stage, and meanwhile, the heating control oscillation effect is reduced and the heating effect is improved by the coarse temperature adjusting stage and the fine temperature adjusting stage; and the adjustable power of the heating rate stage is realized, and more process parameters are provided for the bonding process.
Drawings
Fig. 1 is a schematic structural diagram of a heating device according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a bonding heating control apparatus according to an embodiment of the present invention.
Fig. 3 is a flowchart of a bonding heating control method according to an embodiment of the present invention.
Fig. 4 is a graph illustrating a relationship between temperature and time in a bonding heating control method according to an embodiment of the present invention.
Fig. 5 is a flow chart of a heating control algorithm according to an embodiment of the present invention.
Detailed Description
In order to make the contents of the present invention more clearly understood, the contents of the present invention will be further described with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention is described in detail with reference to the drawings, and for convenience of explanation, the drawings are not enlarged partially according to the general scale, and should not be construed as limiting the present invention.
The core idea of the invention is as follows: the temperature of each temperature sensor in the two heating devices is measured through the heating controller, the PWM opening degrees of the heaters in the two heating devices are respectively output, the two heating driving devices respectively drive the two heaters to work according to the two PWM opening degrees output by the heating controller, and the two heating devices respectively heat and pressurize the silicon wafer or the glass sheet, so that the two heating devices work simultaneously and are mutually independent, the heating time is saved, and the heating efficiency is improved.
Fig. 1 is a schematic structural diagram of a heating device according to an embodiment of the present invention. As shown in fig. 1, the heating device 10 sequentially includes: a platen 11, a first graphite sheet 12, a heating plate 13, a second graphite sheet 14, a ceramic plate 15, and a base 16. Pressure disk 11 is used for carrying out even face contact to materials such as bonded silicon chip, glass piece and exerts pressure, first graphite flake 12 is realized heating plate 13 with even heat transfer between the pressure disk 11, the built-in electric heater of heating plate 13 is realized by the drive of heating drive arrangement the heater heating output, second graphite flake 14 is realized heating plate 13 with even heat transfer between ceramic dish 15, ceramic dish 15 is used for realizing right 16 thermal-insulated of base, 16 realization of base and frame be connected. Temperature sensors are arranged between the pressure plate 11 and the first graphite plate 12 and between the heater 13 and the second graphite plate 14, the temperature sensor between the pressure plate 11 and the first graphite plate 12 is a pressure plate temperature sensor 17, and the temperature sensor between the heater 13 and the second graphite plate 14 is a heater temperature sensor 18. In this embodiment, graphite sheets are respectively disposed on the upper and lower sides of the heating plate 13, so that the temperature can be uniformly spread; the heater temperature sensor 18 is selected as a feedback control point, the output of the heater can be responded quickly, the pressure plate temperature sensor 17 is selected as a process evaluation point, the smooth output of the temperature in the process flow can be realized, the influence of the heating control oscillation effect is avoided, and the bonding precision is improved.
Fig. 2 is a schematic structural diagram of a bonding heating control apparatus according to an embodiment of the present invention. As shown in fig. 2, the bonding heating control device 100 includes a heating controller 30, two heating devices 10 and 20 for heating and pressurizing a silicon wafer or a glass sheet, and two heating driving devices 40 and 50, wherein the heating device described in the above embodiment is adopted, and a heater and at least two temperature sensors are provided therein; the heating controller 30 is configured to measure each temperature sensor in the two heating devices and output a PWM opening of the heater; and the heating driving device drives the heater to work according to the PWM opening degree output by the heating controller.
The two heating devices are an upper disc heating device 10 and a lower disc heating device 20, respectively, and the two heating driving devices are an upper disc heating driving device 40 and a lower disc heating driving device 50, respectively. The heating controller 30 measures the temperatures of the temperature sensors in the upper plate heating device 10 and the lower plate heating device 20, and outputs the PWM opening degrees of the heaters in the upper plate heating device 10 and the lower plate heating device 20 through a heating control algorithm; the upper tray heating driving device 40 drives the heater in the upper tray heating device 10 to operate according to the PWM opening of the heater in the upper tray heating device 10 output by the heating controller 30, and the lower tray heating driving device 50 drives the heater in the lower tray heating device 20 to operate according to the PWM opening of the heater in the lower tray heating device 20 output by the heating controller 30; then, the upper plate heating device 10 heats the silicon wafer 70 under pressure, and the lower plate heating device 20 heats and pressurizes the silicon wafer 80, so that the two heating devices work simultaneously and are independent from each other, the heating time is saved, and the heating efficiency is improved. It is understood that the bonding heating control device provided by the invention can be used for not only pressurizing and heating a silicon wafer or a glass sheet, but also other materials known by those skilled in the art.
The bonding heating control device 100 further comprises a human-machine interface 60, and the human-machine interface 60 is used for setting device parameters of the bonding heating control device to start or stop a bonding process, including instructions of heating start and stop. The device parameters comprise a heater PWM opening set value, a ratio of a heating rate to the heater PWM opening set value, PID parameters and the like.
Please refer to fig. 3, which is a flowchart illustrating a bonding heating control method according to an embodiment of the present invention. As shown in fig. 3, the bonding heating control method includes the steps of:
step S01: the heating controller measures the temperature of a temperature sensor in the heating device and outputs the PWM opening degree of a heater in the heating device;
step S02: the heating driving device drives the heater to work according to the PWM opening degree output by the heating controller;
step S03: the heating device heats and pressurizes the silicon wafer or the glass sheet.
Specifically, referring to fig. 2 and 3, in step S01, the heating controller 30 measures the temperatures of the temperature sensors in the upper plate heating apparatus 10 and the lower plate heating apparatus 20, respectively, and outputs the PWM opening degrees of the heaters in the upper plate heating apparatus 10 and the lower plate heating apparatus 20, respectively, through a heating control algorithm.
In step S02, the upper tray heating driving device 40 drives the heater in the upper tray heating apparatus 10 to operate according to the PWM opening of the heater in the upper tray heating apparatus 10 output from the heating controller 30; the lower disc heating driving device 50 drives the heater in the lower disc heating device 20 to operate according to the PWM opening of the heater in the lower disc heating device 20 output by the heating controller 30.
In step S03, the upper plate heating apparatus 10 and the lower plate heating apparatus 20 heat and press the silicon wafer or the glass wafer, respectively.
In this embodiment, the heating controller outputs PWM opening degrees of heaters of the two heating devices, respectively, and the two heating driving devices drive the heaters of the two heating devices to operate, respectively, and the two heating devices operate simultaneously but are independent of each other.
According to the deviation value between the temperature of the heater and the actually required temperature, the heating process of the heater is divided into three stages: the rate heating period T1, the coarse temperature adjustment period T2, and the fine temperature adjustment period T3 are shown in fig. 4, in which the abscissa represents the time T and the ordinate represents the temperature T. In the rate heating stage t1, calculating a ratio kpv of a heating rate ramp to a heater PWM opening set value sv according to experiments, and setting the ratio as a parameter of bonding heating control; in the temperature coarse adjustment stage t2, a PID control algorithm is adopted, and the amplitude limiting range of a PID parameter and a heater PWM opening set value sv is set as a parameter for bonding heating control; in the temperature fine tuning stage t3, a PID control algorithm is adopted, and a PID parameter and a limiting range of a heater PWM opening setting value sv are set as parameters for bonding heating control.
According to the bonding heating control method provided by the invention, the heating process of the heater is divided into three stages, the heating time is shortened and the yield is improved by rapid heating in the rate heating stage, and meanwhile, the heating control oscillation effect is reduced and the heating effect is improved by the coarse temperature adjusting stage and the fine temperature adjusting stage; and the adjustable power of the heating rate stage is realized, and more process parameters are provided for the bonding process.
Fig. 5 shows a flow of a heating control algorithm according to an embodiment of the present invention. As shown in fig. 5, after the heater starts to heat, it is first determined whether the rate heating period t1 is in: if the bonding heating device is in the rate heating stage t1, acquiring kpv parameters from bonding heating control device parameters, calculating an sv value according to sv ═ ramp × > kpv, driving the heater to work by the heating driving device according to the sv value, and then judging whether heating needs to be turned off; if the temperature is not in the rate heating stage t1, it is determined whether the temperature is in the coarse temperature stage t 2. If the temperature is in a coarse temperature adjustment stage t2, acquiring PID1 parameters from bonding heating control device parameters, calculating an sv value according to a PID control algorithm, driving the heater to work by the heating driving device according to the sv value, and then judging whether heating needs to be turned off; if the temperature is not in the coarse temperature adjustment stage t2, it is determined whether the temperature is in the fine temperature adjustment stage t 3. If the temperature is in the fine temperature adjustment stage t3, acquiring PID2 parameters from bonding heating control device parameters, calculating an sv value according to a PID control algorithm, driving the heater to work by the heating driving device according to the sv value, and then judging whether heating needs to be turned off; if the temperature is not in the fine temperature adjustment stage t3, it is directly determined whether the heating needs to be turned off. If the heating is required to be turned off, the heating is directly turned off, and if the heating cannot be turned off, the heating is turned off again until the heating is finally turned off after judging whether the heating is in the rate heating stage t 1.
In summary, in the bonding heating control device provided by the invention, the heating controller measures the temperature of each temperature sensor in the two heating devices, and outputs the PWM opening of the heater in the two heating devices, the two heating driving devices drive the two heaters to work according to the two PWM openings output by the heating controller, and the two heating devices heat and pressurize the silicon wafer or the glass wafer respectively, so that the two heating devices work simultaneously and are independent from each other, thereby saving the heating time and improving the heating efficiency; according to the heating device provided by the invention, the graphite sheets are respectively arranged on the upper side and the lower side of the heating plate, so that the temperature is uniformly spread; the method comprises the following steps that a pressure plate temperature sensor is arranged between a pressure plate and a first graphite sheet, a heating plate temperature sensor is arranged between a heating plate and a second graphite sheet, the heating plate temperature sensor is selected as a feedback control point, the output of a heater can be quickly responded, the pressure plate temperature sensor is selected as a process evaluation point, the smooth output of the temperature in the process flow can be realized, the influence of the heating control oscillation effect is avoided, and the bonding precision is improved; according to the bonding heating control method provided by the invention, the heating process of the heater is divided into three stages, the heating time is shortened and the yield is improved by the rapid heating in the rate heating stage, and meanwhile, the heating control oscillation effect is reduced and the heating effect is improved by the coarse temperature adjusting stage and the fine temperature adjusting stage; and the adjustable power of the heating rate stage is realized, and more process parameters are provided for the bonding process.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (9)
1. A bonding heating control device is characterized by comprising a heating controller, two heating devices and two heating driving devices;
the heating device is used for heating and pressurizing a silicon wafer or a glass sheet, and a heater and at least two temperature sensors are arranged in the heating device; the heating device sequentially comprises: the temperature sensor arranged between the pressure plate and the first graphite sheet is a pressure plate temperature sensor, the temperature sensor arranged between the heater and the second graphite sheet is a heater temperature sensor, the pressure plate temperature sensor is a process evaluation point, and the heater temperature sensor is a feedback control point;
the heating controller is used for measuring each temperature sensor in the two heating devices and respectively outputting the PWM opening degree of the heater;
and the heating driving device drives the heater to work according to the PWM opening degree output by the heating controller so as to heat and pressurize two silicon wafers or glass sheets respectively.
2. The bonding heating control device of claim 1, further comprising a human machine interface for setting device parameters to start or stop a bonding process.
3. The bonding heating control device of claim 2, wherein the device parameters comprise: a heater PWM opening set value, a ratio of a heating rate to the heater PWM opening set value, and PID parameters.
4. The bonded heating control of claim 1, wherein an electric heater is disposed within the heater disk.
5. A bonding heating control method, comprising the steps of:
step S01: the heating controller measures the temperature of a temperature sensor in the heating device and outputs the PWM opening degree of a heater in the heating device; the heating device sequentially comprises: the temperature sensor arranged between the pressure plate and the first graphite sheet is a pressure plate temperature sensor, the temperature sensor arranged between the heater and the second graphite sheet is a heater temperature sensor, the pressure plate temperature sensor is a process evaluation point, and the heater temperature sensor is a feedback control point;
step S02: the heating driving device drives the heaters to work according to the PWM opening degree output by the heating controller, the heating controller respectively outputs the PWM opening degrees of the heaters in the two heating devices, the two heating driving devices respectively drive the two heaters to work, and the two heating devices work simultaneously but are independent of each other;
step S03: the heating device heats and pressurizes two silicon wafers or glass sheets simultaneously.
6. The bonding heating control method of claim 5, wherein the heating process of the heater is divided into three stages according to the magnitude of the temperature deviation value of the heater: a rate heating stage, a coarse temperature adjusting stage and a fine temperature adjusting stage.
7. The bonding heating control method according to claim 6, wherein in the rate heating stage, a ratio of a heating rate to a set value of a PWM opening degree of the heater is experimentally calculated as a parameter setting of the bonding heating control.
8. The bonding heating control method according to claim 6, wherein in the coarse temperature adjustment stage, a PID control algorithm is adopted, and the limiting ranges of a PID parameter and a heater PWM opening set value are set as parameters of bonding heating control.
9. The bonding heating control method according to claim 6, wherein in the temperature fine tuning stage, a PID control algorithm is adopted, and a PID parameter and a limit range of a heater PWM opening setting value are set as parameters of the bonding heating control.
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| CN201610200573.8A CN107293504B (en) | 2016-03-31 | 2016-03-31 | Bonding heating control device and method thereof |
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| CN102460677A (en) * | 2009-04-16 | 2012-05-16 | 休斯微技术股份有限公司 | Improved apparatus for temporary wafer bonding and debonding |
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| CN201708143U (en) * | 2010-03-22 | 2011-01-12 | 无锡华润安盛科技有限公司 | Fixture for packaging and bonding sensor chips |
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