TWI681500B - Wafer process equipment and method for processing wafer - Google Patents
Wafer process equipment and method for processing wafer Download PDFInfo
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- TWI681500B TWI681500B TW107137891A TW107137891A TWI681500B TW I681500 B TWI681500 B TW I681500B TW 107137891 A TW107137891 A TW 107137891A TW 107137891 A TW107137891 A TW 107137891A TW I681500 B TWI681500 B TW I681500B
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Abstract
Description
本發明是有關於一種晶圓加工機台及其加工方法,尤指一種具有烘烤(Oven)、消除翹曲(Dewarpage)及冷卻(Cooling)三合一功能之晶圓加工機台及其加工方法。 The invention relates to a wafer processing machine and a processing method thereof, in particular to a wafer processing machine with functions of baking, dewarpage and cooling, and processing thereof method.
晶圓透過連續加工將電路製作於表面上,完成各種需求的電子零件,而晶圓加工的過程則視製作需求而定,但大多都會有多個步驟如烘烤(Oven)、接合(Bonding)、消除翹曲(Dewarpage)及冷卻(Cooling)等等步驟。 The wafer is processed on the surface through continuous processing to complete various electronic parts. The wafer processing process depends on the production needs, but most of them will have multiple steps such as baking and bonding. , Eliminate warpage (Dewarpage) and cooling (Cooling) and other steps.
當前的晶圓加工機台,於實際的生產製程中,各個程序的特性差異極大,製程中較無法同時進行兩種以上的製作程序,例如,其中的晶圓烘烤製程對溫度和時間的要求須非常精確,而晶圓接合製程在設備需有迅速、均勻之加熱系統,同時可夠提供高且均勻之壓力處理,並需搭配後段製程導入特殊氣體進行加工與製作物快速抽真空等製作階段性需求,因此基本上,設備設計會將前述各個製程分別獨立設置,避免不同的工序相互干擾製作成品。 In the current wafer processing machines, in actual production processes, the characteristics of each program are very different, and it is less possible to perform more than two production processes at the same time. For example, the temperature and time requirements of the wafer baking process It must be very accurate, and the wafer bonding process needs a rapid and uniform heating system in the equipment, and it can provide high and uniform pressure processing, and it needs to be equipped with a special gas introduced in the later stage for processing and rapid vacuuming of the production. Therefore, basically, the equipment design will set up each of the aforementioned processes independently to avoid different processes interfering with each other to make the finished product.
然而,由於各個製程的運行程序差異大,須分別有獨立的設備以完成晶圓的加工製程,導致於晶圓製造過程中花費的時間較為冗長,且生產成本也相對過高。 However, due to the large differences in the operating procedures of the various processes, separate equipment is required to complete the wafer processing process, resulting in longer time spent in the wafer manufacturing process and relatively high production costs.
以上所述,習知具有下列之缺點:1.晶圓加工的製程較為費時;2.生產成本過高。 As mentioned above, the conventional method has the following disadvantages: 1. The wafer processing process is relatively time-consuming; 2. The production cost is too high.
是以,要如何解決上述習用之問題與缺失,即為本案之發明人與從事此行業之相關廠商所亟欲研究改善之方向所在者。 Therefore, how to solve the problems and deficiencies in the above-mentioned practice is the one where the inventors of this case and related manufacturers engaged in this industry are desperate to study the direction of improvement.
爰此,為有效解決上述之問題,本發明之主要目的在於提供一種可於同一腔體內完成烘烤(Oven)及消除翹曲(Dewarpage)及冷卻(Cooling)三合一功能之晶圓加工機台。 Therefore, in order to effectively solve the above-mentioned problems, the main purpose of the present invention is to provide a wafer processing machine that can accomplish the functions of baking (Oven), eliminating warpage (Dewarpage) and cooling (Cooling) in the same cavity station.
本發明之次要目的,在於提供一種可大幅減少晶圓加工時間之晶圓加工機台。 The secondary objective of the present invention is to provide a wafer processing machine that can greatly reduce wafer processing time.
本發明之次要目的,在於提供一種可大幅降低生產成本之晶圓加工機台。 The secondary objective of the present invention is to provide a wafer processing machine that can greatly reduce production costs.
本發明之次要目的,在於提供一種可於同一腔體內完成烘烤(Oven)及消除翹曲(Dewarpage)及冷卻(Cooling)三合一功能之晶圓加工方法。 The secondary objective of the present invention is to provide a wafer processing method that can perform the functions of baking (Oven), eliminating warpage (Dewarpage) and cooling (Cooling) in the same cavity.
本發明之次要目的,在於提供一種可大幅減少晶圓加工時間之晶圓加工方法。 The secondary objective of the present invention is to provide a wafer processing method that can greatly reduce wafer processing time.
本發明之次要目的,在於提供一種可大幅降低生產成本之晶圓加工方法。為達上述目的,本發明係提供一種晶圓加工機台,係包括一腔體、一上壓裝置、一承載裝置及一對位裝置,所述腔體可為一真空狀態,所述上壓裝置設置於所述腔體內並具有一壓板及一氣囊,所述壓板可吸附一晶圓,所述承載裝置設置於所述腔體內並與所述上壓裝置相對應,所述承載裝置具有一承載台及一升降台,所述承載台設置一玻璃基板對應與所述晶圓相貼附,所述對位裝置設置於所述腔體內,所述對位裝置係用以判斷所述晶圓及玻璃基板的位置是否正確。 The secondary objective of the present invention is to provide a wafer processing method that can greatly reduce production costs. In order to achieve the above object, the present invention provides a wafer processing machine, which includes a cavity, an upper pressure device, a carrying device and a positioning device, the cavity can be in a vacuum state, and the upper pressure The device is arranged in the cavity and has a pressure plate and an air bag. The pressure plate can adsorb a wafer. The carrier device is arranged in the cavity and corresponds to the upper pressure device. The carrier device has a A carrying table and a lifting table, a glass substrate corresponding to the wafer is attached to the carrying table, the alignment device is disposed in the cavity, and the alignment device is used to determine the wafer And the position of the glass substrate is correct.
為達上述目的,本發明係提供一種晶圓加工方法,係包含下列步驟:於一腔體內設有一晶圓及一玻璃基板;將一壓板下降以關閉所述腔體並將其內部抽真空,並將所述腔體內部進行升溫以完成所述晶圓及玻璃基板之烘烤(Oven);烘烤(Oven)完成後,再將所述腔體內部升高至一固定溫度後,將所述壓板下壓並透過一氣囊之加壓以令所述晶圓貼附至所述玻璃基板上進行接合(Bonding);接合(Bonding)完成後,加熱一承載台至一固定溫度後開始進行消除翹曲(Dewarpage);消除翹曲(Dewarpage)完成後,將所述腔體內部進行冷卻(Cooling);冷卻(Cooling)完成後,上升所述壓板以開啟所述腔體,取出所述腔體內部加工完成的晶圓。 To achieve the above object, the present invention provides a wafer processing method including the following steps: a wafer and a glass substrate are provided in a cavity; a platen is lowered to close the cavity and evacuate the inside, Heating the inside of the cavity to complete the baking of the wafer and the glass substrate; after the baking is completed, and then raising the inside of the cavity to a fixed temperature, the The pressure plate is pressed down and pressurized by a balloon to attach the wafer to the glass substrate for bonding; after bonding is completed, a carrier is heated to a fixed temperature and then eliminated Warpage (Dewarpage); after the completion of eliminating warpage (Dewarpage), the inside of the cavity is cooled (Cooling); after cooling (Cooling) is completed, the pressure plate is raised to open the cavity, and the cavity is taken out The finished wafer.
透過本發明的設計,透過於所述真空腔體內同時完成烘烤(Oven)及消除翹曲(Dewarpage)及冷卻(Cooling)之晶圓加工製程,達到具有三合一功能之晶圓加工機台,並可達到減少晶圓加工時間及降低生產成本之效果者。 Through the design of the present invention, wafer processing machines with three-in-one functions are achieved by simultaneously performing wafer processing processes of baking (Oven), eliminating warpage (Dewarpage) and cooling (Cooling) in the vacuum chamber , And can achieve the effect of reducing wafer processing time and reducing production costs.
1‧‧‧晶圓加工機台 1‧‧‧wafer processing machine
2‧‧‧腔體 2‧‧‧cavity
20‧‧‧上壓裝置 20‧‧‧Upper pressure device
201‧‧‧壓板 201‧‧‧Press plate
202‧‧‧氣囊 202‧‧‧Bag
21‧‧‧承載裝置 21‧‧‧Bearing device
211‧‧‧承載台 211‧‧‧Carrying platform
212‧‧‧升降台 212‧‧‧lifting table
22‧‧‧對位裝置 22‧‧‧Alignment device
23‧‧‧傳動機構 23‧‧‧ Transmission mechanism
24‧‧‧升降機構 24‧‧‧ Lifting mechanism
25‧‧‧溫控單元 25‧‧‧Temperature control unit
26‧‧‧吸附單元 26‧‧‧Adsorption unit
27‧‧‧晶圓 27‧‧‧ Wafer
28‧‧‧玻璃基板 28‧‧‧Glass substrate
第1圖係為本發明晶圓加工機台之第一實施例之立體圖;第2圖係為本發明晶圓加工方法之第一實施例之流程圖;第3圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第4圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第5圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第6圖係為本發明晶圓加工方法之第一實施例之實施示意圖; 第7圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第8圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第9圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第10圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第11圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第12圖係為本發明晶圓加工方法之第一實施例之實施示意圖;第13圖係為本發明晶圓加工方法之第二實施例之流程圖;第14圖係為本發明晶圓加工方法之第二實施例之實施示意圖。 Figure 1 is a perspective view of a first embodiment of a wafer processing machine of the present invention; Figure 2 is a flowchart of a first embodiment of a wafer processing method of the present invention; Figure 3 is a wafer processing of the present invention Implementation schematic diagram of the first embodiment of the method; FIG. 4 is an implementation schematic diagram of the first embodiment of the wafer processing method of the present invention; FIG. 5 is an implementation schematic diagram of the first embodiment of the wafer processing method of the present invention; FIG. 6 is a schematic diagram of the first embodiment of the wafer processing method of the present invention; Figure 7 is a schematic diagram of the first embodiment of the wafer processing method of the invention; Figure 8 is a schematic diagram of the first embodiment of the wafer processing method of the invention; Figure 9 is a wafer processing of the invention Implementation schematic diagram of the first embodiment of the method; FIG. 10 is an implementation schematic diagram of the first embodiment of the wafer processing method of the invention; FIG. 11 is an implementation schematic diagram of the first embodiment of the wafer processing method of the invention; Figure 12 is a schematic diagram of the first embodiment of the wafer processing method of the present invention; Figure 13 is a flowchart of the second embodiment of the wafer processing method of the present invention; Figure 14 is a wafer processing of the present invention Implementation diagram of the second embodiment of the method.
本發明之上述目的及其結構與功能上的特性,將依據所附圖式之較佳實施例予以說明。 The above objects, structural and functional characteristics of the present invention will be described based on the preferred embodiments of the accompanying drawings.
請參閱第1圖,係為本發明晶圓加工機台1之第一實施例之立體圖,如圖所示,一種晶圓加工機台,係包括一腔體2、一上壓裝置20、一承載裝置21及一對位裝置22,所述腔體2於本發明中為一真空狀態之腔體2,所述上壓裝置20及承載裝置21係相對應呈平行設置並分別設在腔體2的上部及下部,所述上壓裝置20具有一壓板201及一氣囊202,所述壓板201係用以於晶圓加工過程中吸附晶圓27,並可令晶圓27與一玻璃基板28分開,以確保所述玻璃基板28進行烘烤製程時受熱可更加均勻,此外,於所述腔體2內抽真空的過程中,可防止氣泡殘留於玻璃基板28內,大幅提高晶圓27生產的良率,所述氣囊202係用以於晶圓加工製程時,於所述壓板201下降的過程中,所述氣囊202會與壓板201相接觸,以令所述晶圓27與玻璃基板28於接合製程中,可達到所述晶圓27及玻璃基板28平均受壓,有效防止所述晶圓27與玻璃基板28破裂的問題;所述承載裝置21具有一承載台211及一升降台212,於所述承載台211上設置
一玻璃基板28對應與所述晶圓27相貼附,所述升降台212係用以於晶圓加工製程中,依序將所述晶圓27及玻璃基板28由所述承載台211位置處升高至所述腔體2中間位置處,以便進行晶圓27及玻璃基板28的加工製程;另外,所述壓板201及承載台211分別設有一溫控單元25(請參閱第3圖所示),可令所述壓板201及承載台211同時具有加熱及冷卻之功能,換言之,所述壓板201及承載台211分別具有加熱單元及冷卻單元(圖中未示),所述加熱單元用以加熱壓板201及承載台211,並於加熱時,可使晶圓27及玻璃基板28的壓平速度變快,亦可提高壓平效果,所述冷卻單元用以冷卻壓板201及承載台211,使得晶圓27及玻璃基板28加熱壓平後可迅速地達成冷卻作用,而於本發明中,所述壓板201及承載台211之材質係選擇為雲母片材料或陶瓷複合材料所製成,以使其達到最佳效果;所述對位裝置22設置於所述腔體2內,所述對位裝置22係用以執行晶圓對位程序,而晶圓對位程序必須透過準確的晶圓27對位,於執行晶圓27接合製程時才能確保功能性不會因為接合不完整產生錯誤動作,或造成降低良品率的問題。在對位製作過程方面,可以採用機械性對位方式(Mechanical Alignment)或光學對位(Optical Alignment)方式進行,於本發明中,係採用感光耦合元件(Charge-coupled Device,CCD)檢測裝置來進行晶圓對位程序,以達到高精度之效果,達到更精密的對位效果,提升生產良率。
Please refer to FIG. 1, which is a perspective view of a first embodiment of a
此外,所述晶圓加工機台1更具有一傳動機構23對應與所述上壓裝置20相連接,其係用以帶動上壓裝置20進行上升下降的動作,以及一升降機構24對應與所述升降台212相連接,其係用以帶動升降台212的上升及下降,所述晶圓加工機台1還具有一吸附單元26對應設置於所述承載台211位置處,於本實施例中,所述吸附單元26係為一靜電吸盤(Electrostatic Chuck),其係防止所述晶圓27及玻璃基板28於加工過程中產生位移的狀況,以令所
述晶圓27及玻璃基板28可安定地吸附固定於所述承載台211上;續請參閱第2至11圖並一併參閱第1圖,係為本發明晶圓加工方法第一實施例之流程圖及實施示意圖,如圖所示,一種晶圓加工方法,係包含下列步驟:
In addition, the
S1:於一腔體內設有一晶圓及一玻璃基板;請一併參閱第3至8圖,為步驟S1的作動流程示意圖,在步驟S1中,提供一腔體2,在所述腔體2內設置一上壓裝置20及一承載裝置21,所述上壓裝置20及承載裝置21係相對應平行設置於所述腔體2內,所述上壓裝置20具有一壓板201及一氣囊202,所述承載裝置21具有一承載台211及一升降台212,將所述壓板201及承載台211進行預熱,接著所述升降台212上升,置入一晶圓27於所述升降台212上,接著升降台212下降至承載台211處,且於承載台211位置處設有一吸附單元26以吸附固定所述晶圓27,避免晶圓27產生位移,接著所述壓板201下降,將所述晶圓27進行整平並吸附後再行上升,此時晶圓27吸附在所述上壓裝置20上;所述升降台212上的晶圓27被吸附在上壓裝置20上之後,置入一玻璃基板28於所述升降台212上後再下降至所述承載台211處,接著透過所述吸附單元26令所述玻璃基板28吸附固定住避免產生位移。
S1: a wafer and a glass substrate are provided in a cavity; please refer to FIGS. 3 to 8 together, which is a schematic diagram of the operation flow of step S1. In step S1, a
S2:將一壓板下降以關閉所述腔體並將其內部抽真空,並將所述腔體內部進行升溫以完成所述晶圓及玻璃基板之烘烤(Oven);請參閱第9圖,在步驟S2中,下降所述壓板201以關閉所述腔體2,並將腔體2內部進行抽真空並上升至一固定溫度後靜待一段時間,以完成所述晶圓27及玻璃基板28之烘烤(Oven)製程,於此階段中,所述氣囊202會與壓板201相互接觸,尤須注意的是,於完成烘烤製程前,晶圓27及玻璃基板28之間係不相接觸的。
S2: lower a pressure plate to close the cavity and evacuate the inside of the cavity, and heat the inside of the cavity to complete the baking of the wafer and the glass substrate; please refer to FIG. 9, In step S2, the
S3:烘烤(Oven)完成後,再將所述腔體內部升高至一固定溫度後,將所述壓板下壓並透過一氣囊之加壓以令所述晶圓貼附至所述玻璃基板上進行接合(Bonding);請參閱第10圖,在步驟S3中,烘烤製程結束後,腔體2內部的溫度再往上升高至一固定溫度後,將所述壓板201下壓並透過所述氣囊202的加壓作用(此時所述壓板201上的晶圓27會與所述承載台211上的玻璃基板28相接觸),以令晶圓27貼附至玻璃基板28上進行接合(Bonding)製程,而氣囊202的作用可使晶圓27及玻璃基板28平均受壓,有效地防止所述晶圓27與玻璃基板28破裂的問題。
S3: After the baking (Oven) is completed, after the interior of the cavity is raised to a fixed temperature, the pressure plate is pressed down and pressurized by a balloon to attach the wafer to the glass Bonding on the substrate; please refer to FIG. 10, in step S3, after the baking process is completed, after the temperature inside the
S4:接合(Bonding)完成後,加熱一承載台至一固定溫度後開始進行消除翹曲(Dewarpage);在步驟S4中,接合製程結束後,再將所述承載台211再加熱至一固定溫度後開始進行消除翹曲(Dewarpage)製程,此時,所述晶圓27及玻璃基板28同樣呈相貼附狀態。
S4: After bonding, heating a carrier to a fixed temperature and then starting to eliminate warpage (Dewarpage); in step S4, after the bonding process is completed, the
S5:消除翹曲(Dewarpage)完成後,將所述腔體內部進行冷卻(Cooling):在步驟S5中,消除翹曲製程結束後,開始進行所述腔體2內部的冷卻(Cooling)步驟並且持續一段時間,以逐漸冷卻加工完成的晶圓27。
S5: After the warpage elimination (Dewarpage) is completed, the inside of the cavity is cooled (Cooling): In step S5, after the warpage elimination process is completed, a cooling step inside the
S6:冷卻(Cooling)完成後,上升所述壓板以開啟所述腔體,取出所述腔體內部加工完成的晶圓;請參閱第11、12圖,在步驟S6中,冷卻製程結束後,將所述壓板201升起後以開啟所述腔體2,接著上升所述升降台212,並透過一機械手臂(圖中未示)取出所述腔體2內部已加工完成的晶圓27。
S6: After the cooling (Cooling) is completed, the pressure plate is raised to open the cavity, and the processed wafer inside the cavity is taken out; please refer to Figures 11 and 12, in step S6, after the cooling process is completed, After lifting the
故透過本發明的晶圓加工機台及晶圓加工方法,可達到於同一腔體2內完成
烘烤(Oven)、消除翹曲(Dewarpage)及冷卻(Cooling)之製程,也就是說,本發明的晶圓加工機台1係為一具備三合一功能的機台,如此一來,不僅可大幅減少晶圓加工的時間耗費外,還可大幅降低生產成本。
Therefore, the wafer processing machine and wafer processing method of the present invention can be completed in the
最後請參閱第13、14圖,係為本發明晶圓加工方法之第二實施例之流程圖及實施示意圖,所述之晶圓加工方法部份元件及元件間之相對應之關係與前述之晶圓加工方法相同,故在此不再贅述,惟本晶圓加工方法與前述最主要之差異為,於所述步驟S1:於一腔體內設有一晶圓及一玻璃基板後更包含一步驟S7:利用一感光耦合元件(Charge-coupled Device,CCD)檢測裝置判斷所述晶圓及玻璃基板的凹口(notch)位置是否正常;在步驟S7中,透過一對位裝置22執行晶圓對位程序(Wafer Alignment Process),所述對位裝置22選擇利用一感光耦合元件(Charge-coupled Device,CCD)檢測裝置,判斷吸附在所述壓板201上的晶圓27及承載台211上的玻璃基板28的凹口(notch)位置是否正常,以校對所述晶圓27及玻璃基板28的位置達到高精度之效果。
Finally, please refer to FIG. 13 and FIG. 14, which is a flowchart and a schematic diagram of the second embodiment of the wafer processing method of the present invention. The wafer processing method is the same, so it is not repeated here, but the main difference between this wafer processing method and the foregoing is that in the step S1: after a wafer and a glass substrate are provided in a cavity, a step is further included S7: Use a photosensitive-coupled device (Charge-coupled Device, CCD) detection device to determine whether the position of the notch of the wafer and the glass substrate is normal; in step S7, perform wafer pairing through the
以上所述,本發明相較於習知具有下列優點:1.具有三合一功能之晶圓加工機台;2.可大幅減少晶圓加工時間;3.可大幅降低生產成本。 As described above, the present invention has the following advantages over conventional ones: 1. Wafer processing machine with three-in-one function; 2. Can significantly reduce wafer processing time; 3. Can greatly reduce production costs.
以上已將本發明做一詳細說明,惟以上所述者,僅為本發明之一較佳實施例而已,當不能限定本發明實施之範圍。即凡依本發明申請範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍。 The present invention has been described in detail above, but the above is only one of the preferred embodiments of the present invention, and cannot limit the scope of the present invention. That is, all changes and modifications made within the scope of the application of the present invention shall still fall within the scope of the patent of the present invention.
1‧‧‧晶圓加工機台 1‧‧‧wafer processing machine
2‧‧‧腔體 2‧‧‧cavity
20‧‧‧上壓裝置 20‧‧‧Upper pressure device
201‧‧‧壓板 201‧‧‧Press plate
202‧‧‧氣囊 202‧‧‧Bag
21‧‧‧承載裝置 21‧‧‧Bearing device
211‧‧‧承載台 211‧‧‧Carrying platform
212‧‧‧升降台 212‧‧‧lifting table
22‧‧‧對位裝置 22‧‧‧Alignment device
23‧‧‧傳動機構 23‧‧‧ Transmission mechanism
24‧‧‧升降機構 24‧‧‧ Lifting mechanism
26‧‧‧吸附單元 26‧‧‧Adsorption unit
27‧‧‧晶圓 27‧‧‧ Wafer
28‧‧‧玻璃基板 28‧‧‧Glass substrate
Claims (11)
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US20110014774A1 (en) * | 2009-04-16 | 2011-01-20 | Suss Microtec Inc | Apparatus for temporary wafer bonding and debonding |
US8658945B2 (en) * | 2004-02-27 | 2014-02-25 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
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US8658945B2 (en) * | 2004-02-27 | 2014-02-25 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
US20110014774A1 (en) * | 2009-04-16 | 2011-01-20 | Suss Microtec Inc | Apparatus for temporary wafer bonding and debonding |
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