TWI783714B - Wafer bonding apparatus - Google Patents
Wafer bonding apparatus Download PDFInfo
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- TWI783714B TWI783714B TW110137193A TW110137193A TWI783714B TW I783714 B TWI783714 B TW I783714B TW 110137193 A TW110137193 A TW 110137193A TW 110137193 A TW110137193 A TW 110137193A TW I783714 B TWI783714 B TW I783714B
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- 235000012431 wafers Nutrition 0.000 claims abstract description 143
- 238000003825 pressing Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000011148 porous material Substances 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 11
- 238000009413 insulation Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
本發明是有關於一種接合設備,且特別是有關於一種晶圓接合設備。The present invention relates to a bonding apparatus, and in particular to a wafer bonding apparatus.
新一代的半導體材料如碳化矽(SiC)與氮化鎵(GaN),相較傳統的半導體材料具有更高效能與更高功率等優勢,適用於5G通訊、電動車等產業。以碳化矽晶圓來說,在進行拋光等製程之前,需先將碳化矽晶圓與作為載體的另一晶圓進行黏合以增加厚度,避免晶圓因厚度太薄而於拋光等製程中破裂。現行的做法是以人工目視方式將兩晶圓的周緣對齊並使其相黏合,然後利用砝碼重壓此兩晶圓並靜置一段時間。然而,人工目視方式不容易準確地使兩晶圓的周緣對齊,且砝碼重壓方式無法準確掌控所需的壓合力道與壓合時間,難以藉由標準化的作業流程確保晶圓的接合品質。The new generation of semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have the advantages of higher performance and higher power than traditional semiconductor materials, and are suitable for 5G communications, electric vehicles and other industries. For silicon carbide wafers, before polishing and other processes, it is necessary to bond the silicon carbide wafer with another wafer as a carrier to increase the thickness, so as to prevent the wafer from being too thin and cracked during polishing and other processes. . The current method is to manually align the peripheries of two wafers and make them stick together, and then use a weight to press the two wafers and let them stand for a while. However, it is not easy to align the peripheral edges of the two wafers accurately by manual visual inspection, and the weight pressing method cannot accurately control the required pressing force and pressing time, and it is difficult to ensure the bonding quality of the wafers through a standardized operation process .
本發明提供一種晶圓接合設備,可藉由標準化的作業流程確保晶圓的接合品質。The invention provides a wafer bonding equipment, which can ensure the bonding quality of wafers through a standardized operation process.
本發明的晶圓接合設備包括一載台、至少兩第一定位件、兩第二定位件、一熱源及一軟質加壓件。載台具有一承載區,承載區適於承載相互疊設的兩晶圓,各晶圓的周緣包括一圓弧區段及一直線區段。兩第一定位件及兩第二定位件配置於載台上且圍繞承載區。兩第一定位件適於抵靠圓弧區段且兩第二定位件適於抵靠直線區段,以定位兩晶圓且使兩直線區段相互對齊。熱源連接於載台且適於加熱承載區,以使兩晶圓之間的一接合材升溫。軟質加壓件可升降地配置於承載區上方。軟質加壓件適於往承載區下移而加壓兩晶圓,以使兩晶圓藉由接合材而相接合。The wafer bonding equipment of the present invention includes a stage, at least two first positioning parts, two second positioning parts, a heat source and a soft pressing part. The carrying platform has a carrying area, which is suitable for carrying two wafers stacked on top of each other. The periphery of each wafer includes an arc segment and a straight line segment. The two first locating elements and the two second locating elements are arranged on the platform and surround the carrying area. The two first positioning pieces are suitable for abutting against the arc section and the two second positioning pieces are suitable for abutting against the straight line section, so as to position the two wafers and align the two straight line sections with each other. The heat source is connected to the carrier and is suitable for heating the carrier region to increase the temperature of a bonding material between the two wafers. The soft pressing part is arranged above the bearing area in a liftable manner. The soft pressing member is suitable for moving down to the supporting area to pressurize the two wafers, so that the two wafers are bonded by the bonding material.
在本發明的一實施例中,上述的至少兩第一定位件及兩第二定位件可伸縮地連接於載台,當軟質加壓件加壓兩晶圓時,至少兩第一定位件及兩第二定位件被軟質加壓件下壓而至少部分地內縮於載台。In one embodiment of the present invention, the above-mentioned at least two first positioning members and two second positioning members are telescopically connected to the stage. When the soft pressing member presses two wafers, the at least two first positioning members and the two second positioning members The two second positioning members are pressed down by the soft pressing member to at least partially shrink inwardly on the platform.
在本發明的一實施例中,上述的晶圓接合設備包括至少兩位置調整組件,其中至少兩位置調整組件配置於載台上,至少兩第一定位件分別連接於至少兩位置調整組件,各位置調整組件適於調整對應的第一定位件的位置,以使至少兩第一定位件抵靠圓弧區段。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes at least two position adjustment components, wherein at least two position adjustment components are arranged on the stage, and at least two first positioning members are respectively connected to the at least two position adjustment components, each The position adjustment assembly is adapted to adjust the positions of the corresponding first positioning members, so that at least two first positioning members abut against the arc section.
在本發明的一實施例中,上述的各位置調整組件適於沿圓弧區段的徑向調整對應的第一定位件的位置。In an embodiment of the present invention, each of the above-mentioned position adjustment components is adapted to adjust the position of the corresponding first positioning member along the radial direction of the arc section.
在本發明的一實施例中,上述的晶圓接合設備包括一第一驅動單元,其中兩第二定位件連接於第一驅動單元,第一驅動單元適於驅動兩第二定位件往承載區移動而抵靠直線區段。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a first driving unit, wherein the two second positioning members are connected to the first driving unit, and the first driving unit is suitable for driving the two second positioning members to the loading area Move against the straight segment.
在本發明的一實施例中,上述的兩第二定位件的連線平行於一第一方向,第一驅動單元適於驅動兩第二定位件沿垂直於第一方向的一第二方向往承載區移動。In an embodiment of the present invention, the line connecting the above-mentioned two second positioning members is parallel to a first direction, and the first driving unit is adapted to drive the two second positioning members to move along a second direction perpendicular to the first direction. The carrying area moves.
在本發明的一實施例中,上述的第一定位件包括一導引結構,導引結構沿著第二方向延伸。In an embodiment of the present invention, the above-mentioned first positioning member includes a guiding structure, and the guiding structure extends along the second direction.
在本發明的一實施例中,上述的晶圓接合設備包括一止擋件及至少一彈性件,止擋件配置於載台上,至少一第二定位件沿第二方向可動地連接於止擋件,至少一彈性件連接於止擋件與至少一第二定位件之間。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a stopper and at least one elastic member, the stopper is arranged on the stage, and at least one second positioning member is movably connected to the stopper along the second direction. For the stopper, at least one elastic member is connected between the stopper and at least one second positioning member.
在本發明的一實施例中,上述的第二定位件包括相連接的一止擋部及一連接部,連接部沿第二方向可動地連接於止擋件,至少一彈性件套設於連接部且壓縮於止擋部與止擋件之間。In an embodiment of the present invention, the above-mentioned second positioning member includes a stopper portion and a connecting portion that are connected, the connecting portion is movably connected to the stopper along the second direction, and at least one elastic member is sheathed on the connecting portion. portion and is compressed between the stopper portion and the stopper.
在本發明的一實施例中,上述的晶圓接合設備包括至少兩第二驅動單元,其中至少兩第一定位件分別連接於至少兩第二驅動單元,各第二驅動單元適於驅動對應的第一定位件往承載區移動而抵靠圓弧區段,各第二驅動單元的驅動力小於第一驅動單元的驅動力。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes at least two second driving units, wherein at least two first positioning members are respectively connected to at least two second driving units, and each second driving unit is suitable for driving the corresponding The first positioning member moves toward the bearing area and abuts against the arc section, and the driving force of each second driving unit is smaller than that of the first driving unit.
在本發明的一實施例中,上述的各第二驅動單元的驅動力為0.2~0.7MPa、0.4~0.7MPa或0.3~0.5MPa。In an embodiment of the present invention, the driving force of each of the above-mentioned second driving units is 0.2-0.7 MPa, 0.4-0.7 MPa or 0.3-0.5 MPa.
在本發明的一實施例中,上述的晶圓接合設備包括一熱風提供單元,其中載台在承載區具有多個孔隙,熱風提供單元適於提供熱風,熱風從承載區下方透過這些孔隙而往承載區上方流動,以使兩晶圓懸浮於承載區上方。In one embodiment of the present invention, the above-mentioned wafer bonding equipment includes a hot air supply unit, wherein the carrier has a plurality of apertures in the loading area, the hot air supply unit is suitable for providing hot air, and the hot air passes through these apertures from below the loading area. flow over the carrying area to suspend the two wafers above the carrying area.
在本發明的一實施例中,上述的熱風的溫度為120~150度、130~150度、130~140度或135度。In an embodiment of the present invention, the temperature of the above-mentioned hot air is 120-150 degrees, 130-150 degrees, 130-140 degrees or 135 degrees.
在本發明的一實施例中,上述的晶圓接合設備包括一吸真空單元,其中載台在承載區具有多個孔隙,吸真空單元適於對這些孔隙進行吸真空,以在承載區產生真空吸附力而吸附兩晶圓。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a vacuum suction unit, wherein the stage has a plurality of holes in the loading area, and the vacuum suction unit is suitable for vacuuming these holes to generate a vacuum in the loading area The two wafers are adsorbed by the adsorption force.
在本發明的一實施例中,上述的晶圓接合設備包括一傾角調整組件,其中傾角調整組件連接於載台且適於調整載台的傾角。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a tilt adjustment component, wherein the tilt adjustment component is connected to the stage and is suitable for adjusting the tilt angle of the stage.
在本發明的一實施例中,上述的傾角調整組件適於調整載台的傾角為1~5度、2~4度、2.5~3.5度或3度。In an embodiment of the present invention, the above-mentioned inclination adjustment assembly is suitable for adjusting the inclination angle of the stage to 1-5 degrees, 2-4 degrees, 2.5-3.5 degrees or 3 degrees.
在本發明的一實施例中,上述的晶圓接合設備包括至少一斷熱元件,其中載台在承載區下方具有一容納空間,容納空間容納熱源,至少一斷熱元件配置於熱源與容納空間的至少部分內表面之間。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes at least one heat-insulating element, wherein the stage has a receiving space under the carrying area, the containing space accommodates a heat source, and at least one heat-insulating element is arranged between the heat source and the containing space between at least some of the inner surfaces of the
在本發明的一實施例中,上述的斷熱元件為環形且沿著熱源的至少部分周緣配置。In an embodiment of the present invention, the above-mentioned thermal break element is annular and arranged along at least part of the periphery of the heat source.
在本發明的一實施例中,上述的熱源的溫度為120~200度、130~150度、143~150度或145度。In an embodiment of the present invention, the temperature of the above-mentioned heat source is 120-200 degrees, 130-150 degrees, 143-150 degrees or 145 degrees.
在本發明的一實施例中,上述的軟質加壓件為一氣囊。In an embodiment of the present invention, the above-mentioned soft pressurizing part is an air bag.
在本發明的一實施例中,上述的氣囊的壓力值為0.04~0.05Mpa。In an embodiment of the present invention, the pressure value of the above-mentioned air bag is 0.04-0.05Mpa.
一種晶圓接合設備,包括一載台、至少兩第一定位件、兩第二定位件、一熱源及一軟質加壓件。載台具有一承載區。至少兩第一定位件及兩第二定位件配置於載台上且圍繞承載區,其中至少兩第一定位件及兩第二定位件適於共同定義一定位區域,定位區域的周緣包括一圓弧區段及一直線區段,至少兩第一定位件適於移至圓弧區段且兩第二定位件適於移至直線區段。熱源連接於載台且適於加熱承載區。軟質加壓件可升降地配置於承載區上方,其中軟質加壓件適於往承載區下移。A wafer bonding equipment includes a carrier, at least two first positioning pieces, two second positioning pieces, a heat source and a soft pressing piece. The carrier has a carrying area. At least two first locating pieces and two second locating pieces are disposed on the carrier and surround the carrying area, wherein at least two first locating pieces and two second locating pieces are adapted to jointly define a positioning area, and the periphery of the positioning area includes a circle The arc segment and the straight line segment, at least two first positioning parts are suitable for moving to the arc segment and the two second positioning parts are suitable for moving to the straight line segment. The heat source is connected to the stage and adapted to heat the carrying area. The soft pressing part is liftably arranged above the bearing area, wherein the soft pressing part is suitable for moving down towards the bearing area.
基於上述,本發明的晶圓接合設備利用至少兩第一定位件抵靠晶圓的周緣之圓弧區段並利用兩第二定位件抵靠晶圓的周緣之直線區段,而可透過三點定位的方式將兩晶圓準確地定位於正確位置,並準確地使兩晶圓的直線區段相互對齊。此外,本發明利用軟質加壓件對晶圓進行加壓,而可確保加壓力道均勻。從而,本發明的晶圓接合設備藉由標準化的作業流程確保了晶圓的接合品質。Based on the above, the wafer bonding equipment of the present invention can pass through three The point positioning method accurately positions the two wafers in the correct position, and accurately aligns the straight line sections of the two wafers with each other. In addition, the present invention utilizes a soft pressing member to pressurize the wafer, thereby ensuring a uniform pressure path. Therefore, the wafer bonding equipment of the present invention ensures the bonding quality of wafers through a standardized operation process.
圖1是本發明一實施例的晶圓接合設備的立體圖。圖2是圖1的晶圓接合設備的分解圖。圖3是圖1的晶圓接合設備的局部立體圖。請參考圖1至圖3,本實施例的晶圓接合設備100包括一載台110、三第一定位件120、兩第二定位件130、一熱源140、一軟質加壓件150、一驅動源180、一電控單元190。載台110具有一承載區110a,這些第一定位件120及這些第二定位件130配置於載台110上且圍繞承載區110a。熱源140連接於載台110且對應於承載區110a。軟質加壓件150藉由驅動源180(例如是汽缸)的驅動而可升降地配置於承載區110a上方。電控單元190供使用者控制晶圓接合設備100之操作。FIG. 1 is a perspective view of a wafer bonding apparatus according to an embodiment of the present invention. FIG. 2 is an exploded view of the wafer bonding apparatus of FIG. 1 . FIG. 3 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . Please refer to FIG. 1 to FIG. 3 , the
圖4是圖3的承載區承載晶圓的俯視圖。圖5是圖3的承載區承載晶圓的側視圖。請參考圖4及圖5,承載區110a適於承載相互疊設的兩晶圓W,各晶圓W的周緣包括一圓弧區段S1(標示於圖4)及一直線區段S2(標示於圖4)。這三個第一定位件120及這兩個第二定位件130適於共同定義一定位區域R(標示於圖4),定位區域R的周緣包括一圓弧區段S1’(標示於圖4)及一直線區段S2’(標示於圖4)。定位區域R為預定對晶圓W進行定位的區域,定位區域R的圓弧區段S1’及直線區段S2’分別對應於晶圓W的圓弧區段S1及直線區段S2。這三個第一定位件120適於移至定位區域R的圓弧區段S1’而抵靠晶圓W的圓弧區段S1而可透過三點定位的方式將兩晶圓W準確地定位於正確位置,且這兩個第二定位件130適於如圖4所示移至定位區域R的直線區段S2’而抵靠晶圓W的直線區段S2,而可準確地使兩晶圓W的直線區段S2相互對齊。熱源140適於加熱承載區110a,以使兩晶圓W之間的一接合材M(繪示於圖5)升溫。熱源的溫度可設定為120~200度、130~150度、143~150度或145度。FIG. 4 is a top view of the wafer carrying area in FIG. 3 . FIG. 5 is a side view of the wafer carrying area in FIG. 3 . Please refer to FIG. 4 and FIG. 5 , the
圖6繪示圖1的軟質加壓件膨脹。軟質加壓件150例如是氣囊且可如圖6所示膨脹,並往承載區110a下移而加壓兩晶圓W,以使兩晶圓W藉由接合材M(繪示於圖5)而相接合。藉由軟質加壓件150的柔軟的特性,可確保其對晶圓W的加壓力道均勻。所述氣囊的壓力可設定為0.04~0.05 Mpa,所述氣囊的直徑例如為185毫米,其加壓晶圓W的時間可設定為1~5分鐘內的適當時間長度。FIG. 6 illustrates the expansion of the flexible compression member of FIG. 1 . The
透過第一定位件120、第二定位件130及軟質加壓件150的上述作用方式,本實施例的晶圓接合設備100藉由標準化的作業流程確保了晶圓W的接合品質。Through the above-mentioned working methods of the
在本實施例中,可將各第一定位件120及各第二定位件130設計為可伸縮地連接於載台。當圖6所示的軟質加壓件150沿著加壓方向P加壓兩晶圓W時,各第一定位件120及各第二定位件130會被軟質加壓件150下壓而至少部分地內縮於載台110,以避免第一定位件120及第二定位件130阻礙軟質加壓件150對晶圓W之加壓。在軟質加壓件150移離各第一定位件120及各第二定位件130之後,各第一定位件120及各第二定位件130可藉由適當形式的彈性件所提供的彈性力而往上復位。In this embodiment, each
請參考圖3及圖4,本實施例的晶圓接合設備100包括三個位置調整組件160。這些位置調整組件160配置於載台110上,這些第一定位件120分別連接於這些位置調整組件160。各位置調整組件160可調整對應的第一定位件120的位置,使第一定位件120在預定的位置抵靠於晶圓W的周緣的圓弧區段S1,以確實地對晶圓W進行三點定位。藉由位置調整組件160的設計,各第一定位件120的位置可微調以因應不同直徑的晶圓W,其適用的直徑範圍例如是149~151毫米。具體而言,各位置調整組件160例如是設計為可沿圓弧區段S1的徑向帶動對應的第一定位件120移動,以調整對應的第一定位件120的位置。在利用各位置調整組件160完成對應的第一定位件120的位置調整之後,可藉由螺鎖或其他方式固定這些位置調整組件160。Please refer to FIG. 3 and FIG. 4 , the
請參考圖3至圖5,在本實施例中,晶圓接合設備100包括一第一驅動單元170。第一驅動單元170例如是汽缸,兩第二定位件130連接於第一驅動單元170,第一驅動單元可驅動兩第二定位件130往承載區110a移動而抵靠晶圓W的直線區段S2。具體而言,兩第二定位件130的連線平行於一第一方向D1(標示於圖4),第一驅動單元170適於驅動兩第二定位件130沿垂直於第一方向D1的一第二方向D2(標示於圖4及圖5)往承載區110a移動,使晶圓W的直線區段S2藉由兩第二定位件130的推抵而沿著第一方向D1對齊。Please refer to FIG. 3 to FIG. 5 , in the present embodiment, the
圖7是圖1的晶圓接合設備的部分構件方塊圖。請參考圖7,本實施例的晶圓接合設備100更可包括一熱風提供單元H。載台110的承載區110a例如為多孔性的陶瓷盤而具有多個孔隙,熱風提供單元H例如透過適當之空氣流路而連接至承載區110a的這些孔隙下方,且適於提供熱風。所述熱風從承載區110a下方透過這些孔隙而往承載區110a上方流動,以使兩晶圓W懸浮於承載區110a上方。藉此,可避免承載區110a與晶圓W之間的摩擦力阻礙第一定位件120及第二定位件130對晶圓W之定位的進行。所述熱風作用於晶圓W的上升力至少須大於兩晶圓W的總重量,以順利地使兩晶圓W懸浮。此外,所述熱風的溫度可設定為120~150度、130~150度、130~140度或135度,以使晶圓W之間的接合材M保持為被加熱的狀態。FIG. 7 is a block diagram of some components of the wafer bonding apparatus in FIG. 1 . Please refer to FIG. 7 , the
如圖7所示,本實施例的晶圓接合設備100可更包括一吸真空單元V。在第一定位件120及第二定位件130完成對晶圓W之定位之後,吸真空單元V可對承載區110a的這些孔隙進行吸真空,以在承載區110a產生真空吸附力而吸附固定兩晶圓W。As shown in FIG. 7 , the
圖8繪示圖1的載台傾斜。請參考圖1及圖8,在本實施例中,晶圓接合設備100更包括至少一傾角調整組件A(繪示為兩個),傾角調整組件A連接於載台110且適於如圖8所示調整載台110的傾角。藉由使載台110傾斜,可使載台110之承載區110a上的懸浮的晶圓W(繪示於圖4及圖5)傾斜地抵靠於第一定位件120而不致非預期地飄移。本實施例的傾角調整組件A例如是螺桿的形式,其適於調整載台110的傾角為1~5度、2~4度、2.5~3.5度或3度。FIG. 8 illustrates the inclination of the stage in FIG. 1 . Please refer to FIG. 1 and FIG. 8 , in this embodiment, the
圖9是圖1的晶圓接合設備的局部立體圖。圖10繪示圖9的結構於另一視角的立體圖。請參考圖2、圖9及圖10,本實施例的晶圓接合設備100更包括斷熱元件C1、C2。載台110在承載區110a下方具有一容納空間CS(標示於圖2),容納空間CS容納熱源140,斷熱元件C1、C2配置於熱源140與容納空間CS的內表面之間,以避免熱源140的熱過度往承載區110a以外的部分傳遞。在本實施例中,斷熱元件C1、C2例如為環形且沿著熱源140的至少部分周緣配置。具體而言,斷熱元件C1例如是斷熱雲母片,斷熱元件C2例如是隔熱墊圈。FIG. 9 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . FIG. 10 shows a perspective view of the structure of FIG. 9 at another viewing angle. Please refer to FIG. 2 , FIG. 9 and FIG. 10 , the
本發明不對第一定位件120的數量加以限制,以下藉由圖式對此舉例說明。圖11是本發明另一實施例的承載區承載晶圓的俯視圖。圖11所示實施例與圖4所示實施例的不同處在於,圖11所示實施例的第一定位件120的數量為兩個,此兩第一定位件120與第二定位件130共同以三點定位的方式來定位晶圓W。也就是說,在第一定位件120的數量為兩個的情況下,第二定位件130除了用以進行晶圓W之周緣的直線區段S2的對齊,更用以配合兩第一定位件120進行晶圓W之三點定位。在第一定位件120的可微調距離有限的情況下,若第一定位件120的數量如圖4所示為三個,則會限制了可適用的晶圓尺寸範圍。圖11所示實施例藉由將第一定位件120的數量設計為兩個而無此問題。The present invention does not limit the quantity of the
圖12是本發明另一實施例的晶圓接合設備的局部立體圖。圖12所示實施例與前述實施例的不同處在於,圖12的其中兩個第一定位件120’各包括一導引結構G,導引結構G沿著第二方向D2延伸且適於導引晶圓,使晶圓在被第二定位件130’推動的過程中藉由導引結構G之導引而被調整為具有正確的方位。FIG. 12 is a partial perspective view of a wafer bonding apparatus according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 12 and the previous embodiments is that each of the two first positioning members 120' in FIG. 12 includes a guiding structure G, and the guiding structure G extends along the second direction D2 and is suitable for guiding The wafer is guided so that the wafer is adjusted to have a correct orientation by being guided by the guiding structure G during the process of being pushed by the
此外,本實施例的晶圓接合設備更包括一止擋件B及兩彈性件E。止擋件B配置於載台110上,第二定位件130’沿第二方向D2可動地連接於止擋件B,兩彈性件E分別對應於兩第二定位件130’,各彈性件E連接於止擋件B與對應的第二定位件130’之間。詳細而言,第二定位件130’包括相連接的一止擋部132及一連接部134,連接部134沿第二方向D2可動地連接於止擋件B,彈性件E套設於連接部134且壓縮於止擋部132與止擋件B之間。藉此,在第一驅動單元170驅動第二定位件130’推抵晶圓的過程中,彈性件E可發揮緩衝的作用,避免晶圓因推力過大而破裂。In addition, the wafer bonding equipment of this embodiment further includes a stopper B and two elastic members E. The stopper B is disposed on the
在本實施例中,晶圓接合設備更可包括多個第二驅動單元170’(例如是汽缸),第一定位件120’分別連接於第二驅動單元170’。各第二驅動單元170’適於驅動對應的第一定位件120’往承載區110a移動,
例如第一定位件120’往該承載區110a移動而抵靠該圓弧區段S1,且各第二驅動單元170’的驅動力例如小於第一驅動單元170的驅動力。舉例來說,各第二驅動單元170’的驅動力為0.2~0.7MPa,較佳為0.4~0.7MPa,最佳為0.3~0.5MPa。藉由將第二驅動單元170’配置為具有小的驅動力,可使第二驅動單元170’具有緩衝作用,避免其驅動力過大而導致晶圓破裂。
In this embodiment, the wafer bonding apparatus may further include a plurality of
100:晶圓接合設備
110:載台
110a:承載區
120、120’:第一定位件
130、130’:第二定位件
132:止擋部
134:連接部
140:熱源
150:軟質加壓件
160:位置調整組件
170:第一驅動單元
170’:第二驅動單元
180:驅動源
190:電控單元
A:傾角調整組件
B:止擋件
C1、C2:斷熱元件
CS:容納空間
D1、D2、P:方向
E:彈性件
G:導引結構
H:熱風提供單元
M:接合材
R:定位區域
S1、S1’:圓弧區段
S2、S2’:直線區段
V:吸真空單元
W:晶圓
100:Wafer bonding equipment
110:
圖1是本發明一實施例的晶圓接合設備的立體圖。 圖2是圖1的晶圓接合設備的分解圖。 圖3是圖1的晶圓接合設備的局部立體圖。 圖4是圖3的承載區承載晶圓的俯視圖。 圖5是圖3的承載區承載晶圓的側視圖。 圖6繪示圖1的軟質加壓件膨脹。 圖7是圖1的晶圓接合設備的部分構件方塊圖。 圖8繪示圖1的載台傾斜。 圖9是圖1的晶圓接合設備的局部立體圖。 圖10繪示圖9的結構於另一視角的立體圖。 圖11是本發明另一實施例的承載區承載晶圓的俯視圖。 圖12是本發明另一實施例的晶圓接合設備的局部立體圖。 FIG. 1 is a perspective view of a wafer bonding apparatus according to an embodiment of the present invention. FIG. 2 is an exploded view of the wafer bonding apparatus of FIG. 1 . FIG. 3 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . FIG. 4 is a top view of the wafer carrying area in FIG. 3 . FIG. 5 is a side view of the wafer carrying area in FIG. 3 . FIG. 6 illustrates the expansion of the flexible compression member of FIG. 1 . FIG. 7 is a block diagram of some components of the wafer bonding apparatus in FIG. 1 . FIG. 8 illustrates the inclination of the stage in FIG. 1 . FIG. 9 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . FIG. 10 shows a perspective view of the structure of FIG. 9 at another viewing angle. FIG. 11 is a top view of a wafer carrying area in a carrying area according to another embodiment of the present invention. FIG. 12 is a partial perspective view of a wafer bonding apparatus according to another embodiment of the present invention.
100:晶圓接合設備 100:Wafer bonding equipment
110:載台 110: carrier
110a:承載區 110a: Loading area
120:第一定位件 120: The first positioning part
130:第二定位件 130: the second positioning part
150:軟質加壓件 150: soft pressure parts
160:位置調整組件 160: Position adjustment component
170:第一驅動單元 170: The first drive unit
180:驅動源 180: drive source
190:電控單元 190: Electronic control unit
A:傾角調整組件 A: Angle adjustment components
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Citations (5)
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US6008113A (en) * | 1998-05-19 | 1999-12-28 | Kavlico Corporation | Process for wafer bonding in a vacuum |
US20030148596A1 (en) * | 2002-02-06 | 2003-08-07 | Kellar Scot A. | Wafer bonding for three-dimensional (3D) integration |
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TW201937622A (en) * | 2018-02-26 | 2019-09-16 | 台灣積體電路製造股份有限公司 | Bonding apparatus and method of bonding substrates |
TW202017098A (en) * | 2018-10-26 | 2020-05-01 | 志聖工業股份有限公司 | Wafer process equipment and method for processing wafer |
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US11282755B2 (en) * | 2019-08-27 | 2022-03-22 | Applied Materials, Inc. | Asymmetry correction via oriented wafer loading |
US11232946B2 (en) * | 2020-02-10 | 2022-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of optimizing film deposition process in semiconductor fabrication by using gas sensor |
TWM597981U (en) * | 2020-02-19 | 2020-07-01 | 總督科技股份有限公司 | Loading and unloading device for pressing ring of wafer carrier plate |
TWM600933U (en) * | 2020-05-07 | 2020-09-01 | 鈦昇科技股份有限公司 | Wafer loading and unloading machine |
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US6008113A (en) * | 1998-05-19 | 1999-12-28 | Kavlico Corporation | Process for wafer bonding in a vacuum |
US20030148596A1 (en) * | 2002-02-06 | 2003-08-07 | Kellar Scot A. | Wafer bonding for three-dimensional (3D) integration |
TW201029095A (en) * | 2008-12-11 | 2010-08-01 | Mitsubishi Heavy Ind Ltd | Room temperature wafer bonding apparatus |
TW201937622A (en) * | 2018-02-26 | 2019-09-16 | 台灣積體電路製造股份有限公司 | Bonding apparatus and method of bonding substrates |
TW202017098A (en) * | 2018-10-26 | 2020-05-01 | 志聖工業股份有限公司 | Wafer process equipment and method for processing wafer |
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TW202245095A (en) | 2022-11-16 |
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TWI797009B (en) | 2023-03-21 |
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