TWI783714B - Wafer bonding apparatus - Google Patents

Wafer bonding apparatus Download PDF

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TWI783714B
TWI783714B TW110137193A TW110137193A TWI783714B TW I783714 B TWI783714 B TW I783714B TW 110137193 A TW110137193 A TW 110137193A TW 110137193 A TW110137193 A TW 110137193A TW I783714 B TWI783714 B TW I783714B
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positioning
wafer bonding
area
degrees
wafers
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TW110137193A
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TW202245095A (en
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林萬迪
何清崇
吳嘉生
林塘棋
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環球晶圓股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • H01L21/187Joining of semiconductor bodies for junction formation by direct bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Abstract

A wafer bonding apparatus includes a base, at least two first positioning components, two second positioning components, a heat source and a soft pressing component. The base has a carrying region, the carrying region is adapted to carry two wafers stacked with each other, and a periphery of each of the wafers includes an arc segment and a straight line segment. The two first positioning components and the two second positioning components are disposed on the base and surround the carrying region. The two first positioning components are adapted to lean against the arc segment and the two second positioning components are adapted to lean against the straight line segment, such that the two wafers are positioned and the two straight lines are aligned to each other. The heat source is connected to the base and adapted to heat the carrying region, such that a temperature of a bonding material between the two wafers is raised. The soft pressing component is disposed above the carrying region and is capable of being elevated. The soft pressing component is adapted to be lowered toward the carrying region to press the two wafers, such that the two wafers are boned two each other through the bonding material.

Description

晶圓接合設備Wafer Bonding Equipment

本發明是有關於一種接合設備,且特別是有關於一種晶圓接合設備。The present invention relates to a bonding apparatus, and in particular to a wafer bonding apparatus.

新一代的半導體材料如碳化矽(SiC)與氮化鎵(GaN),相較傳統的半導體材料具有更高效能與更高功率等優勢,適用於5G通訊、電動車等產業。以碳化矽晶圓來說,在進行拋光等製程之前,需先將碳化矽晶圓與作為載體的另一晶圓進行黏合以增加厚度,避免晶圓因厚度太薄而於拋光等製程中破裂。現行的做法是以人工目視方式將兩晶圓的周緣對齊並使其相黏合,然後利用砝碼重壓此兩晶圓並靜置一段時間。然而,人工目視方式不容易準確地使兩晶圓的周緣對齊,且砝碼重壓方式無法準確掌控所需的壓合力道與壓合時間,難以藉由標準化的作業流程確保晶圓的接合品質。The new generation of semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have the advantages of higher performance and higher power than traditional semiconductor materials, and are suitable for 5G communications, electric vehicles and other industries. For silicon carbide wafers, before polishing and other processes, it is necessary to bond the silicon carbide wafer with another wafer as a carrier to increase the thickness, so as to prevent the wafer from being too thin and cracked during polishing and other processes. . The current method is to manually align the peripheries of two wafers and make them stick together, and then use a weight to press the two wafers and let them stand for a while. However, it is not easy to align the peripheral edges of the two wafers accurately by manual visual inspection, and the weight pressing method cannot accurately control the required pressing force and pressing time, and it is difficult to ensure the bonding quality of the wafers through a standardized operation process .

本發明提供一種晶圓接合設備,可藉由標準化的作業流程確保晶圓的接合品質。The invention provides a wafer bonding equipment, which can ensure the bonding quality of wafers through a standardized operation process.

本發明的晶圓接合設備包括一載台、至少兩第一定位件、兩第二定位件、一熱源及一軟質加壓件。載台具有一承載區,承載區適於承載相互疊設的兩晶圓,各晶圓的周緣包括一圓弧區段及一直線區段。兩第一定位件及兩第二定位件配置於載台上且圍繞承載區。兩第一定位件適於抵靠圓弧區段且兩第二定位件適於抵靠直線區段,以定位兩晶圓且使兩直線區段相互對齊。熱源連接於載台且適於加熱承載區,以使兩晶圓之間的一接合材升溫。軟質加壓件可升降地配置於承載區上方。軟質加壓件適於往承載區下移而加壓兩晶圓,以使兩晶圓藉由接合材而相接合。The wafer bonding equipment of the present invention includes a stage, at least two first positioning parts, two second positioning parts, a heat source and a soft pressing part. The carrying platform has a carrying area, which is suitable for carrying two wafers stacked on top of each other. The periphery of each wafer includes an arc segment and a straight line segment. The two first locating elements and the two second locating elements are arranged on the platform and surround the carrying area. The two first positioning pieces are suitable for abutting against the arc section and the two second positioning pieces are suitable for abutting against the straight line section, so as to position the two wafers and align the two straight line sections with each other. The heat source is connected to the carrier and is suitable for heating the carrier region to increase the temperature of a bonding material between the two wafers. The soft pressing part is arranged above the bearing area in a liftable manner. The soft pressing member is suitable for moving down to the supporting area to pressurize the two wafers, so that the two wafers are bonded by the bonding material.

在本發明的一實施例中,上述的至少兩第一定位件及兩第二定位件可伸縮地連接於載台,當軟質加壓件加壓兩晶圓時,至少兩第一定位件及兩第二定位件被軟質加壓件下壓而至少部分地內縮於載台。In one embodiment of the present invention, the above-mentioned at least two first positioning members and two second positioning members are telescopically connected to the stage. When the soft pressing member presses two wafers, the at least two first positioning members and the two second positioning members The two second positioning members are pressed down by the soft pressing member to at least partially shrink inwardly on the platform.

在本發明的一實施例中,上述的晶圓接合設備包括至少兩位置調整組件,其中至少兩位置調整組件配置於載台上,至少兩第一定位件分別連接於至少兩位置調整組件,各位置調整組件適於調整對應的第一定位件的位置,以使至少兩第一定位件抵靠圓弧區段。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes at least two position adjustment components, wherein at least two position adjustment components are arranged on the stage, and at least two first positioning members are respectively connected to the at least two position adjustment components, each The position adjustment assembly is adapted to adjust the positions of the corresponding first positioning members, so that at least two first positioning members abut against the arc section.

在本發明的一實施例中,上述的各位置調整組件適於沿圓弧區段的徑向調整對應的第一定位件的位置。In an embodiment of the present invention, each of the above-mentioned position adjustment components is adapted to adjust the position of the corresponding first positioning member along the radial direction of the arc section.

在本發明的一實施例中,上述的晶圓接合設備包括一第一驅動單元,其中兩第二定位件連接於第一驅動單元,第一驅動單元適於驅動兩第二定位件往承載區移動而抵靠直線區段。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a first driving unit, wherein the two second positioning members are connected to the first driving unit, and the first driving unit is suitable for driving the two second positioning members to the loading area Move against the straight segment.

在本發明的一實施例中,上述的兩第二定位件的連線平行於一第一方向,第一驅動單元適於驅動兩第二定位件沿垂直於第一方向的一第二方向往承載區移動。In an embodiment of the present invention, the line connecting the above-mentioned two second positioning members is parallel to a first direction, and the first driving unit is adapted to drive the two second positioning members to move along a second direction perpendicular to the first direction. The carrying area moves.

在本發明的一實施例中,上述的第一定位件包括一導引結構,導引結構沿著第二方向延伸。In an embodiment of the present invention, the above-mentioned first positioning member includes a guiding structure, and the guiding structure extends along the second direction.

在本發明的一實施例中,上述的晶圓接合設備包括一止擋件及至少一彈性件,止擋件配置於載台上,至少一第二定位件沿第二方向可動地連接於止擋件,至少一彈性件連接於止擋件與至少一第二定位件之間。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a stopper and at least one elastic member, the stopper is arranged on the stage, and at least one second positioning member is movably connected to the stopper along the second direction. For the stopper, at least one elastic member is connected between the stopper and at least one second positioning member.

在本發明的一實施例中,上述的第二定位件包括相連接的一止擋部及一連接部,連接部沿第二方向可動地連接於止擋件,至少一彈性件套設於連接部且壓縮於止擋部與止擋件之間。In an embodiment of the present invention, the above-mentioned second positioning member includes a stopper portion and a connecting portion that are connected, the connecting portion is movably connected to the stopper along the second direction, and at least one elastic member is sheathed on the connecting portion. portion and is compressed between the stopper portion and the stopper.

在本發明的一實施例中,上述的晶圓接合設備包括至少兩第二驅動單元,其中至少兩第一定位件分別連接於至少兩第二驅動單元,各第二驅動單元適於驅動對應的第一定位件往承載區移動而抵靠圓弧區段,各第二驅動單元的驅動力小於第一驅動單元的驅動力。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes at least two second driving units, wherein at least two first positioning members are respectively connected to at least two second driving units, and each second driving unit is suitable for driving the corresponding The first positioning member moves toward the bearing area and abuts against the arc section, and the driving force of each second driving unit is smaller than that of the first driving unit.

在本發明的一實施例中,上述的各第二驅動單元的驅動力為0.2~0.7MPa、0.4~0.7MPa或0.3~0.5MPa。In an embodiment of the present invention, the driving force of each of the above-mentioned second driving units is 0.2-0.7 MPa, 0.4-0.7 MPa or 0.3-0.5 MPa.

在本發明的一實施例中,上述的晶圓接合設備包括一熱風提供單元,其中載台在承載區具有多個孔隙,熱風提供單元適於提供熱風,熱風從承載區下方透過這些孔隙而往承載區上方流動,以使兩晶圓懸浮於承載區上方。In one embodiment of the present invention, the above-mentioned wafer bonding equipment includes a hot air supply unit, wherein the carrier has a plurality of apertures in the loading area, the hot air supply unit is suitable for providing hot air, and the hot air passes through these apertures from below the loading area. flow over the carrying area to suspend the two wafers above the carrying area.

在本發明的一實施例中,上述的熱風的溫度為120~150度、130~150度、130~140度或135度。In an embodiment of the present invention, the temperature of the above-mentioned hot air is 120-150 degrees, 130-150 degrees, 130-140 degrees or 135 degrees.

在本發明的一實施例中,上述的晶圓接合設備包括一吸真空單元,其中載台在承載區具有多個孔隙,吸真空單元適於對這些孔隙進行吸真空,以在承載區產生真空吸附力而吸附兩晶圓。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a vacuum suction unit, wherein the stage has a plurality of holes in the loading area, and the vacuum suction unit is suitable for vacuuming these holes to generate a vacuum in the loading area The two wafers are adsorbed by the adsorption force.

在本發明的一實施例中,上述的晶圓接合設備包括一傾角調整組件,其中傾角調整組件連接於載台且適於調整載台的傾角。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes a tilt adjustment component, wherein the tilt adjustment component is connected to the stage and is suitable for adjusting the tilt angle of the stage.

在本發明的一實施例中,上述的傾角調整組件適於調整載台的傾角為1~5度、2~4度、2.5~3.5度或3度。In an embodiment of the present invention, the above-mentioned inclination adjustment assembly is suitable for adjusting the inclination angle of the stage to 1-5 degrees, 2-4 degrees, 2.5-3.5 degrees or 3 degrees.

在本發明的一實施例中,上述的晶圓接合設備包括至少一斷熱元件,其中載台在承載區下方具有一容納空間,容納空間容納熱源,至少一斷熱元件配置於熱源與容納空間的至少部分內表面之間。In an embodiment of the present invention, the above-mentioned wafer bonding equipment includes at least one heat-insulating element, wherein the stage has a receiving space under the carrying area, the containing space accommodates a heat source, and at least one heat-insulating element is arranged between the heat source and the containing space between at least some of the inner surfaces of the

在本發明的一實施例中,上述的斷熱元件為環形且沿著熱源的至少部分周緣配置。In an embodiment of the present invention, the above-mentioned thermal break element is annular and arranged along at least part of the periphery of the heat source.

在本發明的一實施例中,上述的熱源的溫度為120~200度、130~150度、143~150度或145度。In an embodiment of the present invention, the temperature of the above-mentioned heat source is 120-200 degrees, 130-150 degrees, 143-150 degrees or 145 degrees.

在本發明的一實施例中,上述的軟質加壓件為一氣囊。In an embodiment of the present invention, the above-mentioned soft pressurizing part is an air bag.

在本發明的一實施例中,上述的氣囊的壓力值為0.04~0.05Mpa。In an embodiment of the present invention, the pressure value of the above-mentioned air bag is 0.04-0.05Mpa.

一種晶圓接合設備,包括一載台、至少兩第一定位件、兩第二定位件、一熱源及一軟質加壓件。載台具有一承載區。至少兩第一定位件及兩第二定位件配置於載台上且圍繞承載區,其中至少兩第一定位件及兩第二定位件適於共同定義一定位區域,定位區域的周緣包括一圓弧區段及一直線區段,至少兩第一定位件適於移至圓弧區段且兩第二定位件適於移至直線區段。熱源連接於載台且適於加熱承載區。軟質加壓件可升降地配置於承載區上方,其中軟質加壓件適於往承載區下移。A wafer bonding equipment includes a carrier, at least two first positioning pieces, two second positioning pieces, a heat source and a soft pressing piece. The carrier has a carrying area. At least two first locating pieces and two second locating pieces are disposed on the carrier and surround the carrying area, wherein at least two first locating pieces and two second locating pieces are adapted to jointly define a positioning area, and the periphery of the positioning area includes a circle The arc segment and the straight line segment, at least two first positioning parts are suitable for moving to the arc segment and the two second positioning parts are suitable for moving to the straight line segment. The heat source is connected to the stage and adapted to heat the carrying area. The soft pressing part is liftably arranged above the bearing area, wherein the soft pressing part is suitable for moving down towards the bearing area.

基於上述,本發明的晶圓接合設備利用至少兩第一定位件抵靠晶圓的周緣之圓弧區段並利用兩第二定位件抵靠晶圓的周緣之直線區段,而可透過三點定位的方式將兩晶圓準確地定位於正確位置,並準確地使兩晶圓的直線區段相互對齊。此外,本發明利用軟質加壓件對晶圓進行加壓,而可確保加壓力道均勻。從而,本發明的晶圓接合設備藉由標準化的作業流程確保了晶圓的接合品質。Based on the above, the wafer bonding equipment of the present invention can pass through three The point positioning method accurately positions the two wafers in the correct position, and accurately aligns the straight line sections of the two wafers with each other. In addition, the present invention utilizes a soft pressing member to pressurize the wafer, thereby ensuring a uniform pressure path. Therefore, the wafer bonding equipment of the present invention ensures the bonding quality of wafers through a standardized operation process.

圖1是本發明一實施例的晶圓接合設備的立體圖。圖2是圖1的晶圓接合設備的分解圖。圖3是圖1的晶圓接合設備的局部立體圖。請參考圖1至圖3,本實施例的晶圓接合設備100包括一載台110、三第一定位件120、兩第二定位件130、一熱源140、一軟質加壓件150、一驅動源180、一電控單元190。載台110具有一承載區110a,這些第一定位件120及這些第二定位件130配置於載台110上且圍繞承載區110a。熱源140連接於載台110且對應於承載區110a。軟質加壓件150藉由驅動源180(例如是汽缸)的驅動而可升降地配置於承載區110a上方。電控單元190供使用者控制晶圓接合設備100之操作。FIG. 1 is a perspective view of a wafer bonding apparatus according to an embodiment of the present invention. FIG. 2 is an exploded view of the wafer bonding apparatus of FIG. 1 . FIG. 3 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . Please refer to FIG. 1 to FIG. 3 , the wafer bonding equipment 100 of the present embodiment includes a stage 110, three first positioning members 120, two second positioning members 130, a heat source 140, a soft pressing member 150, a driving Source 180, an electronic control unit 190. The stage 110 has a carrying area 110a, and the first positioning elements 120 and the second positioning elements 130 are disposed on the stage 110 and surround the carrying area 110a. The heat source 140 is connected to the carrier 110 and corresponds to the carrier area 110a. The soft pressing member 150 is arranged above the bearing area 110 a in a liftable manner by being driven by a driving source 180 (such as a cylinder). The electronic control unit 190 is used for the user to control the operation of the wafer bonding equipment 100 .

圖4是圖3的承載區承載晶圓的俯視圖。圖5是圖3的承載區承載晶圓的側視圖。請參考圖4及圖5,承載區110a適於承載相互疊設的兩晶圓W,各晶圓W的周緣包括一圓弧區段S1(標示於圖4)及一直線區段S2(標示於圖4)。這三個第一定位件120及這兩個第二定位件130適於共同定義一定位區域R(標示於圖4),定位區域R的周緣包括一圓弧區段S1’(標示於圖4)及一直線區段S2’(標示於圖4)。定位區域R為預定對晶圓W進行定位的區域,定位區域R的圓弧區段S1’及直線區段S2’分別對應於晶圓W的圓弧區段S1及直線區段S2。這三個第一定位件120適於移至定位區域R的圓弧區段S1’而抵靠晶圓W的圓弧區段S1而可透過三點定位的方式將兩晶圓W準確地定位於正確位置,且這兩個第二定位件130適於如圖4所示移至定位區域R的直線區段S2’而抵靠晶圓W的直線區段S2,而可準確地使兩晶圓W的直線區段S2相互對齊。熱源140適於加熱承載區110a,以使兩晶圓W之間的一接合材M(繪示於圖5)升溫。熱源的溫度可設定為120~200度、130~150度、143~150度或145度。FIG. 4 is a top view of the wafer carrying area in FIG. 3 . FIG. 5 is a side view of the wafer carrying area in FIG. 3 . Please refer to FIG. 4 and FIG. 5 , the carrying area 110a is suitable for carrying two wafers W stacked on top of each other, and the periphery of each wafer W includes an arc segment S1 (marked in FIG. 4 ) and a straight line segment S2 (marked in FIG. 4 ). Figure 4). The three first positioning members 120 and the two second positioning members 130 are adapted to jointly define a positioning area R (marked in FIG. 4 ), and the periphery of the positioning area R includes an arc segment S1' (marked in FIG. 4 . ) and a straight line segment S2' (marked in Figure 4). The positioning area R is an area where the wafer W is scheduled to be positioned, and the arc segment S1' and the straight line segment S2' of the positioning area R correspond to the arc segment S1 and the straight line segment S2 of the wafer W, respectively. The three first positioning members 120 are adapted to move to the arc segment S1' of the positioning area R and abut against the arc segment S1 of the wafer W, so that the two wafers W can be accurately positioned by means of three-point positioning. In the correct position, and the two second positioning members 130 are suitable for moving to the straight line section S2' of the positioning area R as shown in FIG. The straight sections S2 of the circle W are aligned with each other. The heat source 140 is suitable for heating the loading area 110 a to increase the temperature of a bonding material M (shown in FIG. 5 ) between the two wafers W. The temperature of the heat source can be set to 120-200 degrees, 130-150 degrees, 143-150 degrees or 145 degrees.

圖6繪示圖1的軟質加壓件膨脹。軟質加壓件150例如是氣囊且可如圖6所示膨脹,並往承載區110a下移而加壓兩晶圓W,以使兩晶圓W藉由接合材M(繪示於圖5)而相接合。藉由軟質加壓件150的柔軟的特性,可確保其對晶圓W的加壓力道均勻。所述氣囊的壓力可設定為0.04~0.05 Mpa,所述氣囊的直徑例如為185毫米,其加壓晶圓W的時間可設定為1~5分鐘內的適當時間長度。FIG. 6 illustrates the expansion of the flexible compression member of FIG. 1 . The soft pressurizing member 150 is, for example, an airbag and can be inflated as shown in FIG. 6 , and moves down to the loading area 110 a to pressurize the two wafers W, so that the two wafers W pass through the bonding material M (shown in FIG. 5 ). And join. Due to the softness of the soft pressing member 150 , it can ensure that the pressure path on the wafer W is uniform. The pressure of the airbag can be set to 0.04-0.05 Mpa, the diameter of the airbag is, for example, 185 mm, and the time for pressurizing the wafer W can be set to an appropriate length of time within 1-5 minutes.

透過第一定位件120、第二定位件130及軟質加壓件150的上述作用方式,本實施例的晶圓接合設備100藉由標準化的作業流程確保了晶圓W的接合品質。Through the above-mentioned working methods of the first positioning member 120 , the second positioning member 130 and the soft pressing member 150 , the wafer bonding apparatus 100 of this embodiment ensures the bonding quality of the wafer W through a standardized operation process.

在本實施例中,可將各第一定位件120及各第二定位件130設計為可伸縮地連接於載台。當圖6所示的軟質加壓件150沿著加壓方向P加壓兩晶圓W時,各第一定位件120及各第二定位件130會被軟質加壓件150下壓而至少部分地內縮於載台110,以避免第一定位件120及第二定位件130阻礙軟質加壓件150對晶圓W之加壓。在軟質加壓件150移離各第一定位件120及各第二定位件130之後,各第一定位件120及各第二定位件130可藉由適當形式的彈性件所提供的彈性力而往上復位。In this embodiment, each first positioning member 120 and each second positioning member 130 can be designed to be telescopically connected to the carrier. When the soft pressurizing member 150 shown in FIG. The ground is retracted from the stage 110 to prevent the first positioning member 120 and the second positioning member 130 from hindering the soft pressurizing member 150 from pressing the wafer W. After the soft pressurizing part 150 moves away from each first positioning part 120 and each second positioning part 130, each first positioning part 120 and each second positioning part 130 can be closed by the elastic force provided by an elastic part of a suitable form. Reset up.

請參考圖3及圖4,本實施例的晶圓接合設備100包括三個位置調整組件160。這些位置調整組件160配置於載台110上,這些第一定位件120分別連接於這些位置調整組件160。各位置調整組件160可調整對應的第一定位件120的位置,使第一定位件120在預定的位置抵靠於晶圓W的周緣的圓弧區段S1,以確實地對晶圓W進行三點定位。藉由位置調整組件160的設計,各第一定位件120的位置可微調以因應不同直徑的晶圓W,其適用的直徑範圍例如是149~151毫米。具體而言,各位置調整組件160例如是設計為可沿圓弧區段S1的徑向帶動對應的第一定位件120移動,以調整對應的第一定位件120的位置。在利用各位置調整組件160完成對應的第一定位件120的位置調整之後,可藉由螺鎖或其他方式固定這些位置調整組件160。Please refer to FIG. 3 and FIG. 4 , the wafer bonding apparatus 100 of this embodiment includes three position adjustment components 160 . The position adjustment components 160 are disposed on the stage 110 , and the first positioning members 120 are respectively connected to the position adjustment components 160 . Each position adjustment assembly 160 can adjust the position of the corresponding first positioning member 120, so that the first positioning member 120 abuts against the circular arc section S1 of the periphery of the wafer W at a predetermined position, so as to securely adjust the wafer W. Three point positioning. Through the design of the position adjustment component 160 , the position of each first positioning member 120 can be finely adjusted to cope with wafers W of different diameters, and the applicable diameter range is, for example, 149-151 mm. Specifically, each position adjustment assembly 160 is designed to drive the corresponding first positioning member 120 to move along the radial direction of the arc segment S1 , so as to adjust the position of the corresponding first positioning member 120 . After the position adjustment of the corresponding first positioning member 120 is completed by using each position adjustment component 160 , these position adjustment components 160 can be fixed by screw locks or other methods.

請參考圖3至圖5,在本實施例中,晶圓接合設備100包括一第一驅動單元170。第一驅動單元170例如是汽缸,兩第二定位件130連接於第一驅動單元170,第一驅動單元可驅動兩第二定位件130往承載區110a移動而抵靠晶圓W的直線區段S2。具體而言,兩第二定位件130的連線平行於一第一方向D1(標示於圖4),第一驅動單元170適於驅動兩第二定位件130沿垂直於第一方向D1的一第二方向D2(標示於圖4及圖5)往承載區110a移動,使晶圓W的直線區段S2藉由兩第二定位件130的推抵而沿著第一方向D1對齊。Please refer to FIG. 3 to FIG. 5 , in the present embodiment, the wafer bonding apparatus 100 includes a first driving unit 170 . The first driving unit 170 is, for example, a cylinder. The two second positioning members 130 are connected to the first driving unit 170. The first driving unit can drive the two second positioning members 130 to move to the carrying area 110a and abut against the linear section of the wafer W. S2. Specifically, the line connecting the two second positioning members 130 is parallel to a first direction D1 (marked in FIG. 4 ), and the first driving unit 170 is adapted to drive the two second positioning members 130 along a direction perpendicular to the first direction D1. The second direction D2 (marked in FIG. 4 and FIG. 5 ) moves toward the carrying area 110 a, so that the linear section S2 of the wafer W is aligned along the first direction D1 by the pushing of the two second positioning members 130 .

圖7是圖1的晶圓接合設備的部分構件方塊圖。請參考圖7,本實施例的晶圓接合設備100更可包括一熱風提供單元H。載台110的承載區110a例如為多孔性的陶瓷盤而具有多個孔隙,熱風提供單元H例如透過適當之空氣流路而連接至承載區110a的這些孔隙下方,且適於提供熱風。所述熱風從承載區110a下方透過這些孔隙而往承載區110a上方流動,以使兩晶圓W懸浮於承載區110a上方。藉此,可避免承載區110a與晶圓W之間的摩擦力阻礙第一定位件120及第二定位件130對晶圓W之定位的進行。所述熱風作用於晶圓W的上升力至少須大於兩晶圓W的總重量,以順利地使兩晶圓W懸浮。此外,所述熱風的溫度可設定為120~150度、130~150度、130~140度或135度,以使晶圓W之間的接合材M保持為被加熱的狀態。FIG. 7 is a block diagram of some components of the wafer bonding apparatus in FIG. 1 . Please refer to FIG. 7 , the wafer bonding apparatus 100 of this embodiment may further include a hot air supply unit H. Referring to FIG. The loading area 110a of the carrier 110 is, for example, a porous ceramic disc with a plurality of pores. The hot air supply unit H is connected to the bottom of the openings of the loading area 110a through a suitable air flow path, and is suitable for supplying hot air. The hot air flows from below the loading area 110a through the holes to above the loading area 110a, so that the two wafers W are suspended above the loading area 110a. Thereby, the frictional force between the loading area 110 a and the wafer W can be prevented from obstructing the positioning of the wafer W by the first positioning member 120 and the second positioning member 130 . The lifting force of the hot air acting on the wafer W must at least be greater than the total weight of the two wafers W, so as to suspend the two wafers W smoothly. In addition, the temperature of the hot air can be set at 120-150 degrees, 130-150 degrees, 130-140 degrees or 135 degrees, so as to keep the bonding material M between the wafers W in a heated state.

如圖7所示,本實施例的晶圓接合設備100可更包括一吸真空單元V。在第一定位件120及第二定位件130完成對晶圓W之定位之後,吸真空單元V可對承載區110a的這些孔隙進行吸真空,以在承載區110a產生真空吸附力而吸附固定兩晶圓W。As shown in FIG. 7 , the wafer bonding apparatus 100 of this embodiment may further include a vacuum unit V. As shown in FIG. After the wafer W is positioned by the first positioning member 120 and the second positioning member 130, the vacuum suction unit V can vacuum the pores of the loading area 110a, so as to generate a vacuum suction force in the loading area 110a to adsorb and fix the wafer W. Wafer W.

圖8繪示圖1的載台傾斜。請參考圖1及圖8,在本實施例中,晶圓接合設備100更包括至少一傾角調整組件A(繪示為兩個),傾角調整組件A連接於載台110且適於如圖8所示調整載台110的傾角。藉由使載台110傾斜,可使載台110之承載區110a上的懸浮的晶圓W(繪示於圖4及圖5)傾斜地抵靠於第一定位件120而不致非預期地飄移。本實施例的傾角調整組件A例如是螺桿的形式,其適於調整載台110的傾角為1~5度、2~4度、2.5~3.5度或3度。FIG. 8 illustrates the inclination of the stage in FIG. 1 . Please refer to FIG. 1 and FIG. 8 , in this embodiment, the wafer bonding equipment 100 further includes at least one inclination adjustment assembly A (shown as two), the inclination adjustment assembly A is connected to the stage 110 and is suitable for The inclination angle of the stage 110 is adjusted as shown. By tilting the stage 110 , the floating wafer W (shown in FIG. 4 and FIG. 5 ) on the carrying area 110 a of the stage 110 can lean against the first positioning member 120 obliquely without drifting unexpectedly. The inclination adjustment component A of this embodiment is, for example, in the form of a screw, which is suitable for adjusting the inclination angle of the stage 110 to 1-5 degrees, 2-4 degrees, 2.5-3.5 degrees or 3 degrees.

圖9是圖1的晶圓接合設備的局部立體圖。圖10繪示圖9的結構於另一視角的立體圖。請參考圖2、圖9及圖10,本實施例的晶圓接合設備100更包括斷熱元件C1、C2。載台110在承載區110a下方具有一容納空間CS(標示於圖2),容納空間CS容納熱源140,斷熱元件C1、C2配置於熱源140與容納空間CS的內表面之間,以避免熱源140的熱過度往承載區110a以外的部分傳遞。在本實施例中,斷熱元件C1、C2例如為環形且沿著熱源140的至少部分周緣配置。具體而言,斷熱元件C1例如是斷熱雲母片,斷熱元件C2例如是隔熱墊圈。FIG. 9 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . FIG. 10 shows a perspective view of the structure of FIG. 9 at another viewing angle. Please refer to FIG. 2 , FIG. 9 and FIG. 10 , the wafer bonding equipment 100 of this embodiment further includes thermal insulation elements C1 and C2 . The carrier 110 has a storage space CS (marked in FIG. 2 ) below the loading area 110a. The storage space CS accommodates the heat source 140. The thermal insulation elements C1 and C2 are arranged between the heat source 140 and the inner surface of the storage space CS to prevent the heat source from The heat of 140 is transferred to parts other than the carrying area 110a. In this embodiment, the thermal insulation elements C1 and C2 are, for example, ring-shaped and disposed along at least part of the periphery of the heat source 140 . Specifically, the heat-insulating element C1 is, for example, a heat-insulating mica sheet, and the heat-insulating element C2 is, for example, a heat-insulating washer.

本發明不對第一定位件120的數量加以限制,以下藉由圖式對此舉例說明。圖11是本發明另一實施例的承載區承載晶圓的俯視圖。圖11所示實施例與圖4所示實施例的不同處在於,圖11所示實施例的第一定位件120的數量為兩個,此兩第一定位件120與第二定位件130共同以三點定位的方式來定位晶圓W。也就是說,在第一定位件120的數量為兩個的情況下,第二定位件130除了用以進行晶圓W之周緣的直線區段S2的對齊,更用以配合兩第一定位件120進行晶圓W之三點定位。在第一定位件120的可微調距離有限的情況下,若第一定位件120的數量如圖4所示為三個,則會限制了可適用的晶圓尺寸範圍。圖11所示實施例藉由將第一定位件120的數量設計為兩個而無此問題。The present invention does not limit the quantity of the first positioning member 120 , which is illustrated below with the help of figures. FIG. 11 is a top view of a wafer carrying area in a carrying area according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 11 and the embodiment shown in FIG. 4 lies in that the number of the first positioning members 120 of the embodiment shown in FIG. 11 is two, and the two first positioning members 120 and the second positioning member 130 are in common The wafer W is positioned in a three-point positioning manner. That is to say, when there are two first positioning members 120, the second positioning member 130 is not only used for aligning the straight line segment S2 of the periphery of the wafer W, but also used to cooperate with the two first positioning members. Step 120 performs three-point positioning of the wafer W. In the case where the finely adjustable distance of the first positioning member 120 is limited, if the number of the first positioning member 120 is three as shown in FIG. 4 , the applicable wafer size range will be limited. The embodiment shown in FIG. 11 avoids this problem by designing the number of the first positioning members 120 to be two.

圖12是本發明另一實施例的晶圓接合設備的局部立體圖。圖12所示實施例與前述實施例的不同處在於,圖12的其中兩個第一定位件120’各包括一導引結構G,導引結構G沿著第二方向D2延伸且適於導引晶圓,使晶圓在被第二定位件130’推動的過程中藉由導引結構G之導引而被調整為具有正確的方位。FIG. 12 is a partial perspective view of a wafer bonding apparatus according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 12 and the previous embodiments is that each of the two first positioning members 120' in FIG. 12 includes a guiding structure G, and the guiding structure G extends along the second direction D2 and is suitable for guiding The wafer is guided so that the wafer is adjusted to have a correct orientation by being guided by the guiding structure G during the process of being pushed by the second positioning member 130 ′.

此外,本實施例的晶圓接合設備更包括一止擋件B及兩彈性件E。止擋件B配置於載台110上,第二定位件130’沿第二方向D2可動地連接於止擋件B,兩彈性件E分別對應於兩第二定位件130’,各彈性件E連接於止擋件B與對應的第二定位件130’之間。詳細而言,第二定位件130’包括相連接的一止擋部132及一連接部134,連接部134沿第二方向D2可動地連接於止擋件B,彈性件E套設於連接部134且壓縮於止擋部132與止擋件B之間。藉此,在第一驅動單元170驅動第二定位件130’推抵晶圓的過程中,彈性件E可發揮緩衝的作用,避免晶圓因推力過大而破裂。In addition, the wafer bonding equipment of this embodiment further includes a stopper B and two elastic members E. The stopper B is disposed on the platform 110, the second positioning member 130' is movably connected to the stopper B along the second direction D2, and the two elastic members E correspond to the two second positioning members 130' respectively, and each elastic member E It is connected between the stopper B and the corresponding second positioning member 130'. In detail, the second positioning member 130' includes a stopper 132 and a connecting part 134 connected to each other, the connecting part 134 is movably connected to the stopper B along the second direction D2, and the elastic member E is sheathed on the connecting part 134 and is compressed between the stopper 132 and the stopper B. In this way, when the first driving unit 170 drives the second positioning member 130' to push against the wafer, the elastic member E can play a buffering role to prevent the wafer from being broken due to excessive thrust.

在本實施例中,晶圓接合設備更可包括多個第二驅動單元170’(例如是汽缸),第一定位件120’分別連接於第二驅動單元170’。各第二驅動單元170’適於驅動對應的第一定位件120’往承載區110a移動, 例如第一定位件120’往該承載區110a移動而抵靠該圓弧區段S1,且各第二驅動單元170’的驅動力例如小於第一驅動單元170的驅動力。舉例來說,各第二驅動單元170’的驅動力為0.2~0.7MPa,較佳為0.4~0.7MPa,最佳為0.3~0.5MPa。藉由將第二驅動單元170’配置為具有小的驅動力,可使第二驅動單元170’具有緩衝作用,避免其驅動力過大而導致晶圓破裂。 In this embodiment, the wafer bonding apparatus may further include a plurality of second driving units 170 ′ (such as cylinders), and the first positioning members 120 ′ are respectively connected to the second driving units 170 ′. Each second driving unit 170' is adapted to drive the corresponding first positioning member 120' to move to the carrying area 110a, for example , the first positioning member 120' moves to the carrying area 110a and abuts against the arc segment S1, and each second positioning member 120' The driving force of the second driving unit 170 ′ is, for example, smaller than that of the first driving unit 170 . For example, the driving force of each second driving unit 170 ′ is 0.2-0.7 MPa, preferably 0.4-0.7 MPa, most preferably 0.3-0.5 MPa. By configuring the second driving unit 170 ′ to have a small driving force, the second driving unit 170 ′ can have a buffering effect, preventing the wafer from breaking due to an excessive driving force.

100:晶圓接合設備 110:載台 110a:承載區 120、120’:第一定位件 130、130’:第二定位件 132:止擋部 134:連接部 140:熱源 150:軟質加壓件 160:位置調整組件 170:第一驅動單元 170’:第二驅動單元 180:驅動源 190:電控單元 A:傾角調整組件 B:止擋件 C1、C2:斷熱元件 CS:容納空間 D1、D2、P:方向 E:彈性件 G:導引結構 H:熱風提供單元 M:接合材 R:定位區域 S1、S1’:圓弧區段 S2、S2’:直線區段 V:吸真空單元 W:晶圓 100:Wafer bonding equipment 110: carrier 110a: Loading area 120, 120': the first positioning piece 130, 130': the second positioning piece 132: stop part 134: connection part 140: heat source 150: soft pressure parts 160: Position adjustment component 170: The first drive unit 170': Second drive unit 180: drive source 190: Electronic control unit A: Angle adjustment components B: stopper C1, C2: Thermal break element CS: hold space D1, D2, P: directions E: Elastic parts G: guide structure H: Hot air supply unit M: Joining material R: positioning area S1, S1': arc section S2, S2': Straight line segment V: vacuum unit W: Wafer

圖1是本發明一實施例的晶圓接合設備的立體圖。 圖2是圖1的晶圓接合設備的分解圖。 圖3是圖1的晶圓接合設備的局部立體圖。 圖4是圖3的承載區承載晶圓的俯視圖。 圖5是圖3的承載區承載晶圓的側視圖。 圖6繪示圖1的軟質加壓件膨脹。 圖7是圖1的晶圓接合設備的部分構件方塊圖。 圖8繪示圖1的載台傾斜。 圖9是圖1的晶圓接合設備的局部立體圖。 圖10繪示圖9的結構於另一視角的立體圖。 圖11是本發明另一實施例的承載區承載晶圓的俯視圖。 圖12是本發明另一實施例的晶圓接合設備的局部立體圖。 FIG. 1 is a perspective view of a wafer bonding apparatus according to an embodiment of the present invention. FIG. 2 is an exploded view of the wafer bonding apparatus of FIG. 1 . FIG. 3 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . FIG. 4 is a top view of the wafer carrying area in FIG. 3 . FIG. 5 is a side view of the wafer carrying area in FIG. 3 . FIG. 6 illustrates the expansion of the flexible compression member of FIG. 1 . FIG. 7 is a block diagram of some components of the wafer bonding apparatus in FIG. 1 . FIG. 8 illustrates the inclination of the stage in FIG. 1 . FIG. 9 is a partial perspective view of the wafer bonding apparatus of FIG. 1 . FIG. 10 shows a perspective view of the structure of FIG. 9 at another viewing angle. FIG. 11 is a top view of a wafer carrying area in a carrying area according to another embodiment of the present invention. FIG. 12 is a partial perspective view of a wafer bonding apparatus according to another embodiment of the present invention.

100:晶圓接合設備 100:Wafer bonding equipment

110:載台 110: carrier

110a:承載區 110a: Loading area

120:第一定位件 120: The first positioning part

130:第二定位件 130: the second positioning part

150:軟質加壓件 150: soft pressure parts

160:位置調整組件 160: Position adjustment component

170:第一驅動單元 170: The first drive unit

180:驅動源 180: drive source

190:電控單元 190: Electronic control unit

A:傾角調整組件 A: Angle adjustment components

Claims (22)

一種晶圓接合設備,包括: 一載台,具有一承載區,其中該承載區適於承載相互疊設的兩晶圓,各該晶圓的周緣包括一圓弧區段及一直線區段; 至少兩第一定位件及兩第二定位件,配置於該載台上且圍繞該承載區,其中該至少兩第一定位件適於抵靠該圓弧區段且該兩第二定位件適於抵靠該直線區段,以定位該兩晶圓且使該兩直線區段相互對齊; 一熱源,連接於該載台且適於加熱該承載區,以使該兩晶圓之間的一接合材升溫;以及 一軟質加壓件,可升降地配置於該承載區上方,其中該軟質加壓件適於往該承載區下移而加壓該兩晶圓,以使該兩晶圓藉由該接合材而相接合。 A wafer bonding apparatus comprising: A carrier has a carrying area, wherein the carrying area is suitable for carrying two wafers stacked on top of each other, and the periphery of each wafer includes an arc section and a straight line section; At least two first locating pieces and two second locating pieces are arranged on the platform and surround the bearing area, wherein the at least two first locating pieces are suitable for abutting against the arc section and the two second locating pieces are suitable for abutting against the straight line segment to position the two wafers and align the two straight line segments with each other; a heat source connected to the stage and adapted to heat the carrying area to heat up a bonding material between the two wafers; and a soft pressure member, which can be raised and lowered above the bearing area, wherein the soft pressure member is suitable for moving down to the bearing area to pressurize the two wafers, so that the two wafers can be bonded by the bonding material join together. 如請求項1所述的晶圓接合設備,其中該至少兩第一定位件及該兩第二定位件可伸縮地連接於該載台,當該軟質加壓件加壓該兩晶圓時,該至少兩第一定位件及該兩第二定位件被該軟質加壓件下壓而至少部分地內縮於該載台。The wafer bonding equipment according to claim 1, wherein the at least two first positioning members and the two second positioning members are telescopically connected to the stage, when the soft pressing member presses the two wafers, The at least two first positioning parts and the two second positioning parts are pressed down by the soft pressing part and are at least partially retracted into the platform. 如請求項1所述的晶圓接合設備,包括至少兩位置調整組件,其中該至少兩位置調整組件配置於該載台上,該至少兩第一定位件分別連接於該至少兩位置調整組件,各該位置調整組件適於調整對應的該第一定位件的位置,以使該至少兩第一定位件抵靠該圓弧區段。The wafer bonding equipment as claimed in claim 1, comprising at least two position adjustment components, wherein the at least two position adjustment components are arranged on the carrier, and the at least two first positioning members are respectively connected to the at least two position adjustment components, Each of the position adjustment components is adapted to adjust the position of the corresponding first positioning member, so that the at least two first positioning members abut against the arc section. 如請求項3所述的晶圓接合設備,其中各該位置調整組件適於沿該圓弧區段的徑向調整對應的該第一定位件的位置。The wafer bonding apparatus as claimed in claim 3, wherein each of the position adjustment components is adapted to adjust the position of the corresponding first positioning member along the radial direction of the arc segment. 如請求項1所述的晶圓接合設備,包括一第一驅動單元,其中該兩第二定位件連接於該第一驅動單元,該第一驅動單元適於驅動該兩第二定位件往該承載區移動而抵靠該直線區段。The wafer bonding equipment as claimed in claim 1, comprising a first driving unit, wherein the two second positioning members are connected to the first driving unit, and the first driving unit is suitable for driving the two second positioning members toward the The carrying area moves against the straight section. 如請求項5所述的晶圓接合設備,其中該兩第二定位件的連線平行於一第一方向,該第一驅動單元適於驅動該兩第二定位件沿垂直於該第一方向的一第二方向往該承載區移動。The wafer bonding equipment according to claim 5, wherein the line connecting the two second positioning members is parallel to a first direction, and the first driving unit is adapted to drive the two second positioning members along a line perpendicular to the first direction A second direction moves toward the carrying area. 如請求項6所述的晶圓接合設備,其中至少一該第一定位件包括一導引結構,該導引結構沿著該第二方向延伸。The wafer bonding apparatus as claimed in claim 6, wherein at least one of the first positioning members includes a guiding structure, and the guiding structure extends along the second direction. 如請求項6所述的晶圓接合設備,包括一止擋件及至少一彈性件,該止擋件配置於該載台上,至少一該第二定位件沿該第二方向可動地連接於該止擋件,該至少一彈性件連接於該止擋件與該至少一第二定位件之間。Wafer bonding equipment according to claim 6, comprising a stopper and at least one elastic member, the stopper is arranged on the stage, and at least one second positioning member is movably connected to the second position along the second direction The stopper, the at least one elastic member is connected between the stopper and the at least one second positioning member. 如請求項8所述的晶圓接合設備,其中該至少一第二定位件包括相連接的一止擋部及一連接部,該連接部沿該第二方向可動地連接於該止擋件,該至少一彈性件套設於該連接部且壓縮於該止擋部與該止擋件之間。The wafer bonding apparatus as claimed in claim 8, wherein the at least one second positioning member includes a stopper portion and a connecting portion connected thereto, and the connecting portion is movably connected to the stopper along the second direction, The at least one elastic member is sheathed on the connecting portion and compressed between the stopper portion and the stopper. 如請求項5所述的晶圓接合設備,包括至少兩第二驅動單元,其中該至少兩第一定位件分別連接於該至少兩第二驅動單元,各該第二驅動單元適於驅動對應的該第一定位件往該承載區移動而抵靠該圓弧區段,各該第二驅動單元的驅動力小於該第一驅動單元的驅動力。The wafer bonding equipment as claimed in claim 5, comprising at least two second drive units, wherein the at least two first positioning members are respectively connected to the at least two second drive units, and each of the second drive units is suitable for driving the corresponding The first positioning member moves toward the bearing area and abuts against the arc section, and the driving force of each of the second driving units is smaller than that of the first driving unit. 如請求項10所述的晶圓接合設備,其中各該第二驅動單元的驅動力為0.2~0.7MPa、0.4~0.7MPa或0.3~0.5MPa。The wafer bonding apparatus according to claim 10, wherein the driving force of each of the second driving units is 0.2~0.7MPa, 0.4~0.7MPa or 0.3~0.5MPa. 如請求項1所述的晶圓接合設備,包括一熱風提供單元,其中該載台在該承載區具有多個孔隙,該熱風提供單元適於提供熱風,該熱風從該承載區下方透過該些孔隙而往該承載區上方流動,以使該兩晶圓懸浮於該承載區上方。The wafer bonding equipment according to claim 1, comprising a hot air supply unit, wherein the carrier has a plurality of holes in the loading area, the hot air supply unit is suitable for providing hot air, and the hot air passes through the loading area from below The pores flow over the carrying area, so that the two wafers are suspended above the carrying area. 如請求項7所述的晶圓接合設備,其中該熱風的溫度為120~150度、130~150度、130~140度或135度。The wafer bonding equipment according to claim 7, wherein the temperature of the hot air is 120-150 degrees, 130-150 degrees, 130-140 degrees or 135 degrees. 如請求項1所述的晶圓接合設備,包括一吸真空單元,其中該載台在該承載區具有多個孔隙,該吸真空單元適於對該些孔隙進行吸真空,以在該承載區產生真空吸附力而吸附該兩晶圓。The wafer bonding equipment as claimed in claim 1, comprising a vacuum suction unit, wherein the stage has a plurality of pores in the loading area, and the vacuum suction unit is suitable for vacuuming the pores, so that in the loading area A vacuum adsorption force is generated to adsorb the two wafers. 如請求項1所述的晶圓接合設備,包括一傾角調整組件,其中該傾角調整組件連接於該載台且適於調整該載台的傾角。The wafer bonding apparatus as claimed in claim 1, comprising an inclination adjustment assembly, wherein the inclination adjustment assembly is connected to the stage and is adapted to adjust the inclination of the stage. 如請求項15所述的晶圓接合設備,其中該傾角調整組件適於調整該載台的傾角為1~5度、2~4度、2.5~3.5度或3度。The wafer bonding apparatus according to claim 15, wherein the inclination adjustment component is suitable for adjusting the inclination angle of the stage to 1-5 degrees, 2-4 degrees, 2.5-3.5 degrees or 3 degrees. 如請求項1所述的晶圓接合設備,包括至少一斷熱元件,其中該載台在該承載區下方具有一容納空間,該容納空間容納該熱源,該至少一斷熱元件配置於該熱源與該容納空間的至少部分內表面之間。The wafer bonding equipment as claimed in claim 1, comprising at least one heat-insulating element, wherein the stage has an accommodating space under the carrying area, the accommodating space accommodates the heat source, and the at least one heat-insulating element is arranged on the heat source and at least part of the inner surface of the accommodating space. 如請求項17所述的晶圓接合設備,其中該斷熱元件為環形且沿著該熱源的至少部分周緣配置。The wafer bonding apparatus as claimed in claim 17, wherein the thermal break element is annular and disposed along at least part of the periphery of the heat source. 如請求項1所述的晶圓接合設備,其中該熱源的溫度為120~200度、130~150度、143~150度或145度。The wafer bonding equipment as described in Claim 1, wherein the temperature of the heat source is 120-200 degrees, 130-150 degrees, 143-150 degrees or 145 degrees. 如請求項1所述的晶圓接合設備,其中該軟質加壓件為一氣囊。The wafer bonding apparatus as claimed in claim 1, wherein the soft pressurizing member is an air bag. 如請求項20所述的晶圓接合設備,其中該氣囊的壓力值為0.04~0.05Mpa。The wafer bonding equipment as claimed in item 20, wherein the pressure value of the air bag is 0.04~0.05Mpa. 一種晶圓接合設備,包括: 一載台,具有一承載區; 至少兩第一定位件及兩第二定位件,配置於該載台上且圍繞該承載區,其中該至少兩第一定位件及該兩第二定位件適於共同定義一定位區域,該定位區域的周緣包括一圓弧區段及一直線區段,該至少兩第一定位件適於移至該圓弧區段且該兩第二定位件適於移至該直線區段; 一熱源,連接於該載台且適於加熱該承載區;以及 一軟質加壓件,可升降地配置於該承載區上方,其中該軟質加壓件適於往該承載區下移。 A wafer bonding apparatus comprising: A carrying platform has a carrying area; At least two first positioning pieces and two second positioning pieces are arranged on the platform and surround the carrying area, wherein the at least two first positioning pieces and the two second positioning pieces are adapted to jointly define a positioning area, and the positioning The periphery of the area includes a circular arc section and a straight line section, the at least two first positioning members are adapted to move to the arc section and the two second positioning members are suitable to move to the straight line section; a heat source connected to the carrier and adapted to heat the carrier area; and A soft pressing part is disposed above the carrying area in a liftable manner, wherein the soft pressing part is suitable for moving down toward the carrying area.
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