TW202017098A - Wafer process equipment and method for processing wafer - Google Patents

Abstract

A wafer process equipment and method for processing wafer comprising a cavity body, a pressing device, a carrying device and an alignment device. The cavity body is in a vacuum state. The pressing device, the carrying device and the alignment device being separately deposed in the cavity body. A wafer and a glass substrate being disposed in the cavity body. Therefore, providing oven, dewarpage and cooling in the cavity body to achieve a three-in-one wafer processing equipment.

Description

Wafer processing machine and processing method thereof

The invention relates to a wafer processing machine and a processing method thereof, in particular to a wafer processing machine with functions of bake (Oven), warpage elimination (Dewarpage) and cooling (Cooling) and its processing method.

The wafer is processed on the surface through continuous processing to complete various electronic parts. The wafer processing process depends on the production needs, but most of them will have multiple steps such as baking and bonding. , Eliminate warpage (Dewarpage) and cooling (Cooling) and other steps. In the current wafer processing machines, in actual production processes, the characteristics of each program are very different, and it is less possible to perform more than two production processes at the same time. For example, the temperature and time requirements of the wafer baking process It must be very accurate, and the wafer bonding process needs a rapid and uniform heating system in the equipment, and it can provide high and uniform pressure processing, and it needs to be equipped with a special gas introduced in the later stage for processing and rapid vacuuming of the production. Therefore, basically, the equipment design will set up each of the aforementioned processes independently to avoid different processes interfering with each other to make the finished product. However, due to the large differences in the operating procedures of the various processes, separate equipment is required to complete the wafer processing process, resulting in longer time spent in the wafer manufacturing process and relatively high production costs. As mentioned above, conventional knowledge has the following disadvantages: 1. The wafer processing process is relatively time-consuming; 2. The production cost is too high. Therefore, how to solve the problems and deficiencies in the above-mentioned practice is the one where the inventors of this case and related manufacturers engaged in this industry are desperate to study the direction of improvement.

Therefore, in order to effectively solve the above-mentioned problems, the main purpose of the present invention is to provide a wafer processing machine that can perform baking (Oven) and eliminate warpage (Dewarpage) and cooling (Cooling) functions in the same cavity. station. The secondary objective of the present invention is to provide a wafer processing machine that can greatly reduce wafer processing time. The secondary objective of the present invention is to provide a wafer processing machine that can greatly reduce production costs. The secondary object of the present invention is to provide a wafer processing method that can accomplish the functions of baking (Oven), eliminating warpage (Dewarpage) and cooling (Cooling) in the same cavity. The secondary objective of the present invention is to provide a wafer processing method that can greatly reduce wafer processing time. The secondary objective of the present invention is to provide a wafer processing method that can greatly reduce production costs. In order to achieve the above object, the present invention provides a wafer processing machine, which includes a cavity, an upper pressure device, a carrying device and a positioning device, the cavity can be in a vacuum state, and the upper pressure The device is arranged in the cavity and has a pressure plate and an air bag. The pressure plate can adsorb a wafer. The carrier device is arranged in the cavity and corresponds to the upper pressure device. The carrier device has a A carrying table and a lifting table, a glass substrate corresponding to the wafer is attached to the carrying table, the alignment device is disposed in the cavity, and the alignment device is used to determine the wafer And the position of the glass substrate is correct. In order to achieve the above object, the present invention provides a wafer processing method including the following steps: a wafer and a glass substrate are provided in a cavity; 　　 lowers a platen to close the cavity and evacuate the inside, Heating the inside of the cavity to complete the baking of the wafer and the glass substrate; after the baking is completed, and then raising the inside of the cavity to a fixed temperature, the The pressure plate is pressed down and pressurized by a balloon to attach the wafer to the glass substrate for bonding; after bonding is completed, a carrier is heated to a fixed temperature and then eliminated Warpage (Dewarpage); 　　　　　　After completion of Dewarpage, the inside of the cavity is cooled (Cooling); After the completion of the cooling (Cooling), the pressure plate is raised to open the cavity, and the cavity is taken out The finished wafer. Through the design of the present invention, the wafer processing machine with three-in-one function can be achieved by simultaneously completing the wafer processing processes of baking (Oven), eliminating warpage (Dewarpage) and cooling (Cooling) in the vacuum chamber , And can achieve the effect of reducing wafer processing time and reducing production costs.

The above objects, structural and functional characteristics of the present invention will be described based on the preferred embodiments of the accompanying drawings. Please refer to FIG. 1, which is a perspective view of a first embodiment of a wafer processing machine 1 of the present invention. As shown in the figure, a wafer processing machine includes a cavity 2, an upper pressing device 20, a The bearing device 21 and the alignment device 22, the cavity 2 is a cavity 2 in a vacuum state in the present invention, the upper pressure device 20 and the bearing device 21 are correspondingly arranged in parallel and respectively arranged in the cavity 2 the upper and lower parts, the upper pressing device 20 has a pressing plate 201 and a balloon 202, the pressing plate 201 is used to adsorb the wafer 27 during the wafer processing process, and can make the wafer 27 and a glass substrate 28 Separated to ensure that the glass substrate 28 is more uniformly heated during the baking process. In addition, during the evacuation of the cavity 2, bubbles can be prevented from remaining in the glass substrate 28, which greatly improves wafer 27 production The yield of the airbag 202 is used during the wafer processing process, during the lowering of the pressure plate 201, the airbag 202 will contact the pressure plate 201 to make the wafer 27 and the glass substrate 28 During the bonding process, the wafer 27 and the glass substrate 28 can be compressed on average, effectively preventing the wafer 27 and the glass substrate 28 from breaking; the carrier 21 has a carrier 211 and a lifting table 212 , A glass substrate 28 is provided on the carrier 211 to correspond to the wafer 27, and the lifting table 212 is used in the wafer processing process to sequentially place the wafer 27 and the glass substrate 28 is raised from the position of the carrier table 211 to the middle position of the cavity 2 for the processing process of the wafer 27 and the glass substrate 28; In addition, the pressing plate 201 and the carrier table 211 are respectively provided with a temperature control unit 25 (please refer to FIG. 3), the pressing plate 201 and the supporting table 211 can simultaneously have heating and cooling functions. In other words, the pressing plate 201 and the supporting table 211 have a heating unit and a cooling unit respectively (not shown in the figure) Shown), the heating unit is used to heat the platen 201 and the supporting table 211, and when heated, the flattening speed of the wafer 27 and the glass substrate 28 can be made faster, and the flattening effect can also be improved. The cooling unit is used By cooling the pressing plate 201 and the supporting table 211, the wafer 27 and the glass substrate 28 can be quickly flattened by heating and flattening. In the present invention, the material of the pressing plate 201 and the supporting table 211 is selected as the mica sheet material Or made of ceramic composite materials to achieve the best results; the alignment device 22 is disposed in the cavity 2, the alignment device 22 is used to perform a wafer alignment process, and the wafer The alignment process must be performed through accurate wafer 27 alignment to ensure that the functionality does not cause erroneous operations due to incomplete bonding or reduce the yield rate when performing the wafer 27 bonding process. In terms of the alignment manufacturing process, mechanical alignment (Optical Alignment) or optical alignment (Optical Alignment) can be used. In the present invention, a photo-coupled device (CCD) detection device is used Carry out wafer alignment procedures to achieve high-precision effects, achieve more precise alignment effects, and improve production yield. In addition, the wafer processing machine 1 further has a transmission mechanism 23 corresponding to the upper pressing device 20, which is used to drive the upper pressing device 20 to move up and down, and a lifting mechanism 24 corresponding to the The lifting platform 212 is connected to drive the lifting platform 212 up and down. The wafer processing machine 1 further has an adsorption unit 26 corresponding to the position of the carrying platform 211, in this embodiment The suction unit 26 is an electrostatic chuck (Electrostatic Chuck), which prevents the wafer 27 and the glass substrate 28 from shifting during processing, so that the wafer 27 and the glass substrate 28 can be stabilized Ground suction is fixed on the carrier 211; please refer to Figures 2 to 11 and also refer to Figure 1 together, which is a flowchart and schematic diagram of the first embodiment of the wafer processing method of the present invention, as shown in the figure , A wafer processing method, which includes the following steps: S1: a wafer and a glass substrate are provided in a cavity; please also refer to Figures 3 to 8 for a schematic diagram of the operation flow of step S1. In step S1, A cavity 2 is provided, and an upper pressure device 20 and a bearing device 21 are provided in the cavity 2, and the upper pressure device 20 and the bearing device 21 are correspondingly arranged in parallel in the cavity 2, the The upper pressing device 20 has a pressing plate 201 and an air bag 202, the carrying device 21 has a carrying table 211 and a lifting table 212, preheats the pressing plate 201 and the carrying table 211, and then the lifting table 212 rises, A wafer 27 is placed on the lifting table 212, and then the lifting table 212 is lowered to the carrier table 211, and a suction unit 26 is provided at the position of the carrier table 211 to adsorb and fix the wafer 27 to avoid the wafer 27 A displacement occurs, and then the pressure plate 201 descends, and the wafer 27 is leveled and sucked and then rises. At this time, the wafer 27 is adsorbed on the pressing device 20; the wafer on the lifting table 212 After 27 is adsorbed on the upper pressing device 20, a glass substrate 28 is placed on the lifting table 212 and then lowered to the supporting table 211, and then the glass substrate 28 is adsorbed and fixed by the adsorption unit 26 To avoid displacement. S2: lower a pressure plate to close the cavity and evacuate the inside of the cavity, and heat the inside of the cavity to complete the baking of the wafer and glass substrate (Oven); please refer to Figure 9, In step S2, the pressure plate 201 is lowered to close the cavity 2, and the interior of the cavity 2 is evacuated and raised to a fixed temperature and waits for a period of time to complete the wafer 27 and the glass substrate 28 Oven process, at this stage, the airbag 202 will contact with the pressure plate 201, it should be noted that before the baking process is completed, the wafer 27 and the glass substrate 28 are not in contact of. S3: After the baking (Oven) is completed, after the interior of the cavity is raised to a fixed temperature, the pressure plate is pressed down and pressurized by a balloon to attach the wafer to the glass Bonding on the substrate; please refer to FIG. 10, in step S3, after the baking process is completed, after the temperature inside the cavity 2 is raised to a fixed temperature, the platen 201 is pressed down and penetrated The pressure effect of the airbag 202 (at this time, the wafer 27 on the pressure plate 201 will contact the glass substrate 28 on the carrier 211), so that the wafer 27 is attached to the glass substrate 28 for bonding (Bonding) process, and the function of the airbag 202 can cause the wafer 27 and the glass substrate 28 to be evenly pressed, effectively preventing the wafer 27 and the glass substrate 28 from cracking. S4: After bonding, heating a carrier table to a fixed temperature and then starting to eliminate warpage (Dewarpage); In step S4, after the bonding process is completed, the carrier table 211 is reheated to a fixed temperature After that, the process of eliminating warpage (Dewarpage) is started. At this time, the wafer 27 and the glass substrate 28 are also in a state of being attached. S5: After the warpage elimination (Dewarpage) is completed, the inside of the cavity is cooled (Cooling); In step S5, after the warpage elimination process is finished, the cooling step inside the cavity 2 is started and For a period of time, the processed wafer 27 is gradually cooled. S6: After the cooling (Cooling) is completed, the pressure plate is raised to open the cavity, and the processed wafer inside the cavity is taken out; please refer to Figures 11 and 12, in step S6, after the cooling process is completed, After the pressure plate 201 is raised to open the cavity 2, the lifting table 212 is then raised, and the processed wafer 27 inside the cavity 2 is taken out through a robot arm (not shown). Therefore, through the wafer processing machine and wafer processing method of the present invention, the processes of baking (Oven), eliminating warpage (Dewarpage) and cooling (Cooling) can be achieved in the same cavity 2, that is to say, this The wafer processing machine 1 of the invention is a machine with a three-in-one function. In this way, not only can the time for wafer processing be greatly reduced, but also the production cost can be greatly reduced. Finally, please refer to FIG. 13 and FIG. 14, which is a flowchart and a schematic diagram of the second embodiment of the wafer processing method of the present invention. The wafer processing method is the same, so it is not repeated here, but the main difference between this wafer processing method and the foregoing is that in the step S1: after a wafer and a glass substrate are provided in a cavity, a step is further included S7: use a photosensitive-coupled device (Charge-coupled Device, CCD) detection device to determine whether the position of the notch of the wafer and the glass substrate is normal; in step S7, perform wafer pairing through the pairing device 22 Wafer Alignment Process, the alignment device 22 selects a photosensitive-coupled device (CCD) detection device to determine the wafer 27 adsorbed on the platen 201 and the glass on the carrier 211 Whether the position of the notch of the substrate 28 is normal, so as to verify the position of the wafer 27 and the glass substrate 28 to achieve the effect of high accuracy. As described above, the present invention has the following advantages compared to the conventional ones: 1. Wafer processing machine with three-in-one function; 2. Wafer processing time can be greatly reduced; 3. Production cost can be greatly reduced. The present invention has been described in detail above, but the above is only one of the preferred embodiments of the present invention, and cannot limit the scope of the present invention. That is, all changes and modifications made within the scope of the application of the present invention shall still fall within the scope of the patent of the present invention.

1: Wafer processing machine 2: cavity 20: pressure device 201: pressure plate 202: airbag 21: Carrier 211: Carrying platform 212: Lifting table 22: Alignment device 23: Transmission mechanism 24: Lifting mechanism 25: Temperature control unit 26: Adsorption unit 27: Wafer 28: glass substrate

Figure 1 is a perspective view of a first embodiment of a wafer processing machine of the present invention; Figure 2 is a flowchart of a first embodiment of a wafer processing method of the present invention; Figure 3 is a wafer processing of the present invention Implementation diagram of the first embodiment of the method; FIG. 4 is an implementation diagram of the first embodiment of the wafer processing method of the invention; FIG. 5 is an implementation diagram of the first embodiment of the wafer processing method of the invention; Figure 6 is a schematic diagram of the first embodiment of the wafer processing method of the present invention; Figure 7 is a schematic diagram of the first embodiment of the wafer processing method of the present invention; Figure 8 is a wafer processing of the present invention Implementation schematic diagram of the first embodiment of the method; FIG. 9 is an implementation schematic diagram of the first embodiment of the wafer processing method of the present invention; FIG. 10 is an implementation schematic diagram of the first embodiment of the wafer processing method of the present invention; Figure 11 is a schematic diagram of the first embodiment of the wafer processing method of the invention; Figure 12 is a schematic diagram of the first embodiment of the wafer processing method of the invention; Figure 13 is a wafer processing of the invention Flow chart of the second embodiment of the method; FIG. 14 is a schematic diagram of an implementation of the second embodiment of the wafer processing method of the present invention.

1: Wafer processing machine

2: cavity

20: pressure device

201: pressure plate

202: airbag

21: Carrier

211: Carrying platform

212: Lifting table

22: Alignment device

23: Transmission mechanism

24: Lifting mechanism

26: Adsorption unit

27: Wafer

28: glass substrate

Claims (12)

A wafer processing machine includes: a cavity, which can be in a vacuum state; an upper pressure device, which is arranged in the cavity, the upper pressure device has a pressure plate and an air bag, and the pressure plate can adsorb a Wafer; a carrier device, disposed in the cavity and corresponding to the upper pressure device, the carrier device has a carrier table and a lifting table, the carrier table is provided with a glass substrate corresponding to the wafer Affixed to each other; and a positioning device, which is arranged in the cavity, and the positioning device is used to determine whether the positions of the wafer and the glass substrate are correct. The wafer processing machine according to claim 1, wherein the alignment device is a charge-coupled device (Charge-coupled Device, CCD) detection device. The wafer processing machine according to claim 1, further comprising a transmission mechanism corresponding to the pressing device to drive the pressing device up or down. The wafer processing machine according to claim 1, further comprising a lifting mechanism corresponding to the lifting table to drive the lifting table up or down. The wafer processing machine according to claim 1, wherein the pressing plate and the carrying table are respectively provided with a temperature control unit, which can enable the pressing plate and the carrying table to have heating and cooling functions at the same time. The wafer processing machine according to claim 1, further comprising an adsorption unit disposed in the cavity, the adsorption unit is an electrostatic chuck (Electrostatic Chuck), which prevents the wafer and the glass substrate A displacement is generated so that the wafer and the glass substrate can be adsorbed and fixed on the carrier table. A wafer processing method includes the following steps: a wafer and a glass substrate are provided in a cavity; a pressure plate is lowered to close the cavity and evacuate the inside of the cavity, and the temperature inside the cavity is heated To complete the baking of the wafer and the glass substrate; after the baking is completed, the interior of the cavity is raised to a fixed temperature, and then the pressure plate is pressed down and passed through a balloon Pressing to attach the wafer to the glass substrate for bonding; after bonding, heating a carrier to a fixed temperature and starting to remove warpage (Dewarpage); eliminating warpage After the (Dewarpage) is completed, the inside of the cavity is cooled (Cooling); after the cooling (Cooling) is completed, the pressure plate is raised to open the cavity, and the processed wafer inside the cavity is taken out. The wafer processing method according to claim 7, wherein the pressing device and the carrier device are correspondingly disposed in the cavity. The wafer processing method according to claim 7, wherein the airbag comes into contact with the pressure plate during the step of lowering the pressure plate to close the cavity. The wafer processing method according to claim 7, wherein the wafer and the glass substrate are not in contact when the temperature is raised inside the cavity to complete the baking (Oven) step. The wafer processing method as described in claim 7, further comprising a step of using a charge-coupled device (Charge-coupled Device, CCD) detection device to determine whether the position of the notch of the wafer and the glass substrate is normal . The wafer processing method as described in claim 7, further comprising a wafer alignment process (Wafer Alignment Process), which is used to calibrate the positions of the wafer and the glass substrate.

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