WO2010120128A3 - 연마용 리테이너링의 제조방법 및 그에 따라 제조된 리테이너링 - Google Patents
연마용 리테이너링의 제조방법 및 그에 따라 제조된 리테이너링 Download PDFInfo
- Publication number
- WO2010120128A3 WO2010120128A3 PCT/KR2010/002339 KR2010002339W WO2010120128A3 WO 2010120128 A3 WO2010120128 A3 WO 2010120128A3 KR 2010002339 W KR2010002339 W KR 2010002339W WO 2010120128 A3 WO2010120128 A3 WO 2010120128A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- retainer ring
- manufacturing
- parent material
- polishing element
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
본 발명은 연마재를 분리형으로 부착함으로써 슬릿을 형성하는 작업을 생략할 수 있어 작업공정이 단순화될 수 있도록 한 연마용 리테이너링의 제조방법 및 그에 따라 제조된 리테이너링에 관한 것이다. 본 발명에 따른 연마용 리테이너링의 제조방법은 반도체 소자를 연마하기 위한 연마용 리테이너링의 제조방법에 있어서, 링 형상의 모재의 상면을 매끄럽게 가공하는 1단계; 연마재를 상기 모재의 상면 형상과 일체되도록 가공하여 단수의 연마재단위체를 제작하는 2단계; 상기 제작된 연마재 단위체를 상기 모재의 상면에 접착시켜 고정시키되, 각 연마재 단위체가 일정 간격으로 이격되도록 접착시키는 3단계를 포함한다. 상기 제조방법에 의해 모재의 상부에 부착된 연마재로 구성되며, 상ㄱ 연마재는 다수의 연마재 단위체가 일정한 간격으로 이격되게 부착되어 홈이 형성되도록 한 것을 특징으로 하는 반도체 소자를 연마하기 위한 연마용 리테이너링을 제조할 수 있다.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090032809A KR20100114327A (ko) | 2009-04-15 | 2009-04-15 | 연마용 리테이너링의 제조방법 및 그에 따라 제조된 리테이너링 |
KR10-2009-0032809 | 2009-04-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010120128A2 WO2010120128A2 (ko) | 2010-10-21 |
WO2010120128A3 true WO2010120128A3 (ko) | 2011-03-31 |
Family
ID=42983008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/002339 WO2010120128A2 (ko) | 2009-04-15 | 2010-04-15 | 연마용 리테이너링의 제조방법 및 그에 따라 제조된 리테이너링 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20100114327A (ko) |
WO (1) | WO2010120128A2 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105014559A (zh) * | 2015-08-06 | 2015-11-04 | 广东新劲刚新材料科技股份有限公司 | 一种具有多层斜齿的金刚石磨轮 |
US20230129597A1 (en) * | 2021-10-27 | 2023-04-27 | Sch Power Tech Co., Ltd. | Retaining Ring for Wafer Polishing |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123232A (ja) * | 2003-10-14 | 2005-05-12 | Toshiba Corp | 研磨装置及び研磨方法、並びに半導体装置の製造方法。 |
JP2007158201A (ja) * | 2005-12-08 | 2007-06-21 | Nippon Seimitsu Denshi Co Ltd | Cmp装置のリテーナリング |
JP2008177248A (ja) * | 2007-01-16 | 2008-07-31 | Tokyo Seimitsu Co Ltd | 研磨ヘッド用リテーナリング |
KR100879085B1 (ko) * | 2008-03-12 | 2009-01-15 | (주)아이에스테크노 | 웨이퍼 연마용 리테이너 링 |
-
2009
- 2009-04-15 KR KR1020090032809A patent/KR20100114327A/ko not_active Application Discontinuation
-
2010
- 2010-04-15 WO PCT/KR2010/002339 patent/WO2010120128A2/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123232A (ja) * | 2003-10-14 | 2005-05-12 | Toshiba Corp | 研磨装置及び研磨方法、並びに半導体装置の製造方法。 |
JP2007158201A (ja) * | 2005-12-08 | 2007-06-21 | Nippon Seimitsu Denshi Co Ltd | Cmp装置のリテーナリング |
JP2008177248A (ja) * | 2007-01-16 | 2008-07-31 | Tokyo Seimitsu Co Ltd | 研磨ヘッド用リテーナリング |
KR100879085B1 (ko) * | 2008-03-12 | 2009-01-15 | (주)아이에스테크노 | 웨이퍼 연마용 리테이너 링 |
Also Published As
Publication number | Publication date |
---|---|
WO2010120128A2 (ko) | 2010-10-21 |
KR20100114327A (ko) | 2010-10-25 |
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