WO2010106484A1 - Cadre collé intégré dans un circuit électronique - Google Patents

Cadre collé intégré dans un circuit électronique Download PDF

Info

Publication number
WO2010106484A1
WO2010106484A1 PCT/IB2010/051111 IB2010051111W WO2010106484A1 WO 2010106484 A1 WO2010106484 A1 WO 2010106484A1 IB 2010051111 W IB2010051111 W IB 2010051111W WO 2010106484 A1 WO2010106484 A1 WO 2010106484A1
Authority
WO
WIPO (PCT)
Prior art keywords
frame
bond
mems
circuit
circuit according
Prior art date
Application number
PCT/IB2010/051111
Other languages
English (en)
Inventor
Klaus Reimann
Zidong Liu
Peter Gerard Steeneken
Olaf Wunnicke
Aarnoud Laurens Roest
Original Assignee
Nxp B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp B.V. filed Critical Nxp B.V.
Publication of WO2010106484A1 publication Critical patent/WO2010106484A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the invention relates to encapsulated integrated RF circuits comprising an integrated bond frame.
  • MEMS MicroElectroMechanical Systems
  • packages i.e., hermetic packages.
  • Prominent examples are capacitive or galvanic MEMS switches for RF.
  • a small and cost-effective package will lead to a wafer-scale package, where the MEMS wafer itself forms one part of the package.
  • the other half can be another wafer that is bonded on the MEMS wafer, e.g., by eutectic bonding onto a bond frame.
  • Microelectromechanical systems are the technology of the very small, and merge at the nano-scale into nanoelectromechanical systems (NEMS) and nanotechnology. MEMS are also referred to as micromachines (in Japan), or
  • MEMS Micro Systems Technology - MST (in Europe). MEMS are separate and distinct from the hypothetical vision of Molecular nanotechnology or Molecular Electronics. MEMS are made up of components between 0.01 to 100 ⁇ m in size (i.e. 0.00001 to 0.1 mm) and MEMS devices generally range in size from 1 ⁇ m to a millimeter. The packaged devices are to be used in circuits. An integrated circuit saves area and is especially attractive at higher frequencies where the passive components such as coils and capacitors become smaller. An alternative is to include the full circuit into the package. Various patent documents disclose encapsulated RF integrated circuits. WO2007/001976 Al describes a RF structure having an antenna formed of seal rings.
  • US2007/290326 Al describes a hermetically sealed assembly were components are fabricated as the packaging so as to reduce size, weight and cost. Also an antenna is formed on the package. The metal seal provided purely seals the cavity. US2005/168306 Al describes a MEMS device with integral packaging. The metal layer from the seal ring is also used for galvanic contact of the MEMS.
  • US2003/045044 Al describes a RF package with an integrated inductor. It describes a hermetically sealed cavity with therein passive components including inductors and antennas. A special via/interconnect technique is employed to span the distance between the active wafer and the passive components at the bottom of the cavity of the other wafer. A closed metal seal ring is provided.
  • a metallic bond- frame for a hermetic package consumes wafer-space, and causes parasitic capacitances and/or losses due to the wide metallic RF feed-throughs under the bond- frame.
  • the manufacturing of these feed-throughs usually requires extra masks and process steps and extra dielectrics are needed to electrically separate the metallic feed- through from the bond- frame.
  • the losses of the RF feed-through can be reduced by making it thicker, the presence of the feed-through metal usually causes extra height differences on the wafer which increases the difficulty of manufacturing a hermetically sealed bond-ring.
  • Transmission lines and coils in- and outside the package need to keep spacing to the metallic bond- frame in order to avoid a reduction in performance.
  • the bond- frame should also be grounded to avoid cross talk. Even further, the ground-connections can consume additional space.
  • the present invention is aimed at providing an RF circuit overcoming one or more of the above disadvantages, and at the same time not jeopardizing other characteristics of an RF circuit.
  • the present invention relates to a RF circuit comprising a closed bond frame, wherein the bond frame forms an electrically coupled inductive element in a resonator configuration, use thereof, as well as a device comprising said RF circuit. Integrating the bond frame as part of the integrated circuit solves the above problems.
  • the bond frame is used as an inductive element, forming a parallel coil in a resonator configuration.
  • the present invention provides a closed seal-ring metal. No metal crossing is needed, whereas at the same time a parallel coil is formed.
  • the present invention uses the bond- frame or equivalently parts of the bond- frame as inductive element in an integrated RF circuit to save space and avoid the bad parasitic influences of the feed-through.
  • a problem is that the bond-frame is necessarily a closed metal path (a closed loop) and cannot be used as a single coil by elements inside the frame. It is therefore used as one or more parallel coils in a resonator configuration.
  • the present invention discloses suited designs and applications so that the bond- frame can be absorbed entirely or partially into the circuit. In some configurations also the need for feed-throughs can be eliminated.
  • the present invention can be advantageous used in, e.g., switchable RF band-pass filters, band-stop filters or matching networks, or as part of an antenna.
  • the invention in a first aspect relates to a RF circuit comprising a closed bond frame, wherein the bond frame forms an electrically coupled inductive element in a resonator configuration.
  • the electrically coupled inductive element consists of two parallel coil, as such an embodiment is easily integrated in an RF circuit.
  • a so-called distributed coil is included in the term "parallel coil”.
  • An alternative term for "bond frame” is "seal ring". These terms should be understood generally. To this invention disclosure it is not relevant how the hermetic cavity is actually formed, e.g., by bonding or other sealing techniques.
  • the present invention is useful for any integrated circuits that use a metallic seal-ring (bond- frame). Most likely these applications use frequencies above 100 MHz, preferably above 1 GHz, due to the limited value of the inductance that can be achieved by the bond- frame. Typically filters are provided in the GHz region, such as at 2 GHz or higher, though also filters up to 100 GHZ and higher are envisaged. New generation devices using frequencies above e.g. 5 GHz are very favorable, as dimensions of the bond frame and frequencies can be matched specifically good, e.g. in terms of losses. Likely devices in these packages are for example MEMS, such as galvanic MEMS (electrostatically or piezoelectrically actuated), MEMS capacitive switches, and tunable capacitors.
  • MEMS such as galvanic MEMS (electrostatically or piezoelectrically actuated)
  • passive LC networks such as adaptive matching networks for power amplifiers or antennas, phase shifters, mechanical oscillators (BAW, SAW, MEMS) as well as band-pass and band-stop filters.
  • the frame might even be used as an antenna or inductive coupler. It may also be used for spectral sensing.
  • the present invention also relates to a RF circuit comprising one or more bond frames, such as more than two, more than three, or more than four bond frames.
  • the present invention is not limited to one bond frame.
  • a bond frame may consist of several layers, forming a stack.
  • the bond frame as such may be regarded as a "composite" bond frame.
  • the bond frame soldering metals are normally not good conductors.
  • a bond- frame may be extended to the left and/or right by a good conductor (see Fig. 4d).
  • a metal layer is used with a conductivity of more than 1 * 10 7 S/m. Typical metals are Ni, Sn, Al, Au, Cu, Ag and alloys thereof.
  • the bond- frame contains at least 10% of one or more of the elements Au, Cu, Ag, Ni, Sn and Al.
  • Such a layer is typically placed below (on the substrate) and/or above (on the bonded part) the bond-frame.
  • the layer could be 5 ⁇ m Al.
  • said metal layer extends the bond-frame horizontally by a width / which is larger than the height h of the bond-frame (see Fig. 4c).
  • the solder is only in the center of this conductor and hence has less effect on the RF properties because the RF current concentrates at the edges of the strip.
  • a solder- stop mask could be devised to prevent the solder from spreading out all over the metal, such as Al. All this is not needed if thermo-compression or ultrasonic bonding with pure Au is done.
  • Such an implementation is preferably adapted to the bonding technology which might vary from application to application.
  • Additional well conducting layers can be added which are isolated from the bond-frame by a dielectric layer for, e.g., electrical feed-through for low frequency signals.
  • a dielectric layer for, e.g., electrical feed-through for low frequency signals.
  • metal layers follow the path of the bond-frame for more than 50% of the part which forms the inductive element of the present invention, preferably for more than 90% thereof.
  • the present bond frame could be used for sealing a cavity, such as above a substrate on which a bond frame resides. Such is e.g. the case when a MEMS is present.
  • the present RF circuit typically comprises a tunable capacitive device, an RF input, and an RF output.
  • the tunable capacitive switch is connected to a DC voltage Vb, whereas the bond frame is typically connected to a second stable voltage, such as to earth.
  • the input or output (or both) RF signal connection is directly connected to the bond- frame. As such no RF feed-through is needed.
  • the tunable capacitive switch is preferably further connected to a second capacitor, as well as to the bond frame. Further, a matching circuit may be present.
  • the present invention thus relates to using a part of the bond frame electrically, as such not requiring a closed bond frame.
  • a bond frame, forming part of a package is completely closed
  • the package is hermitically sealed.
  • the present invention provides advantages specifically if a closed seal ring is present.
  • the invention thus relates to the use of the bond frame as for example, an antenna application, an inductor and a transmission line. It is noted that an inductor could be considered as antenna matching and would then be an integral or external part of the antenna.
  • Such an antenna typically comprises an input and an output.
  • the seal ring typically forms a complete, non- intermitted, electrical conductive path, from an input to an output thereof.
  • the present RF circuit typically comprises a bond frame of a so-called low temperature soldering. Further, typically a cap is provided, sealing the RF circuit, such as a MEMS. Such a cap could be made of silicon, a glass, AI2O3, a ceramic, a polymer, etc. For RF properties it is beneficial if the cap is an insulating or high resistivity material.
  • the RF circuit further comprising one or more of a MEMS tunable or switchable capacitor, a galvanic MEMS switch, a capacitive MEMS, a varactor diode, a MOS varactor, a capacitor, a capacitor bank, an acoustic resonator, an acoustic wave guide, and a semiconductor switch within the bond frame.
  • Preferred embodiments are for example a MEMS tunable capacitor, a galvanic/ohmic MEMS switch, a MEMS resonator or a BAW or a SAW device.
  • MEMS switches offer the best RF properties and because they often require the type of package, which is the subject of this invention.
  • a rectangular shape of the ring to utilize the full die area.
  • Even further preferred in terms of RF performance are rounded shapes, wherein the bond frame is substantially circular, such as rectangular, square, hexagonal, octagonal, multigonal, oval, ellipse shaped, circular and combinations thereof, such as a rectangular with rounded corners, preferably circular. In terms of losses, coil performance, etc. such shapes are preferred.
  • Intrusions offer advantages in terms of e.g. connection lines into a package. From an RF point of view round structures have advantages. However, space is lost on a typical die, as it normally is rectangular. A good compromise in this respect might be an almost rectangular shape with rounded or mitered corners.
  • the bond frame has a thickness of 1-20 ⁇ m, such as 10 ⁇ m, and a width of 10-200 ⁇ m, such as 50 ⁇ m. Width and thickness can be modeled to specific requirements of the RF circuit, e.g. to the frequency used, the specific use of the RF circuit etc.
  • the RF circuit for tuning impedance, and/or for forming a band matching network.
  • the inductance is only tuned indirectly.
  • a packaged component normally is a tunable or switchable capacitor, e.g., an RF MEMS.
  • the bond frame is grounded at at least one position and/or wherein the bond frame is extended.
  • the invention in a second aspect relates to a device, such as band-pass filter, harmonic suppression notch, phase shifter, LC circuit, voltage controlled oscillator, comprising an RF circuit according to the invention.
  • the invention relates to RF module, such as a MEMS, LC network, BAW, SAW, tunable filter, reconfigurable matching network, RF fixed or tunable oscillator, adaptive RF network, and combinations thereof, comprising an RF circuit according to the invention.
  • RF module such as a MEMS, LC network, BAW, SAW, tunable filter, reconfigurable matching network, RF fixed or tunable oscillator, adaptive RF network, and combinations thereof, comprising an RF circuit according to the invention.
  • the invention relates to a use of a bond frame, such as in an RF circuit according to any of claims 1-7, for an antenna, for a tunable antenna, for an adaptive antenna, for a coil, for a resonant slot antenna, a matching circuit, a hermetic seal, a wireless electrical, magnetic or electromagnetic transducer, for switching operation between bands or adapting to changing an RF source or load, or a combination thereof.
  • a bond frame such as in an RF circuit according to any of claims 1-7, for an antenna, for a tunable antenna, for an adaptive antenna, for a coil, for a resonant slot antenna, a matching circuit, a hermetic seal, a wireless electrical, magnetic or electromagnetic transducer, for switching operation between bands or adapting to changing an RF source or load, or a combination thereof.
  • the invention in a fifth aspect relates to a mobile communication device, data transfer device, RF-ID, RADAR, comprising an RF circuit according to the invention, and/or an RF module according to the invention.
  • Fig. 1 shows an example of a prior art design of a RF circuit.
  • Fig. 2 shows a resonator layout according to the invention.
  • Fig. 3 shows a resonator layout according to the invention.
  • Figs. 4a-4e show schematic cross sections of a prior art RF circuit and a present RF circuit.
  • Fig. 5 shows simulation set-up of the present RF circuit.
  • Fig. 6 shows results of the simulation of the present RF circuit.
  • Fig. 7 envisages a design with a bond- frame.
  • Fig. 1 shows an example of prior art design, if the inductive elements were to be integrated on-chip or on an additional carrier (such as PCB, glass, interposer, etc.).
  • the negative impacts of the bond-frame crossings such as loss (resistance), and reduced tuning range (parasitic capacitance) are depicted. Less visible is the negative impact of the bond-frame on the size.
  • the inductive elements should keep a minimum distance from the bond- frame and the bond- frame can be fairly broad (80um), so that performance is reduced and/or extra space is consumed.
  • the bond- frame crossings 102 cause extra resistances 120 and parasitic capacitances 121. Additionally the bond- frame can use considerable space and can be fairly large dependent on the technology constraints.
  • Fig. 1 shows an example of prior art design, if the inductive elements were to be integrated on-chip or on an additional carrier (such as PCB, glass, interposer, etc.).
  • the negative impacts of the bond-frame crossings such as loss (resi
  • the bond- frame (201) is used as inductive element in a resonator.
  • the bond- frame provides two parallel coils that are tapped at the resonator connections 211 and 212.
  • the parallel configuration allows a closed bond- frame.
  • the tuned capacitor value Cl (230) can be realized, e.g., by capacitive MEMS, capacitor banks switched by galvanic MEMS, varactor diodes, MOS varactors, ferroelectric capacitors or capacitor banks switched by semiconductor switches. It is noted that no feed-throughs beneath the bond- frame are needed. Parasitic couplings are thus avoided.
  • the metals that realize the coils are anyhow wide and thick to realize a good quality factor.
  • the bond- frame is therefore fully embedded into the package. It relates to one of many possibilities how the present integrated resonator could be constructed.
  • MEMS is shown on the left panel.
  • the right panel contains an equivalent circuit
  • the MEMS circuit configuration shown here makes use of an advantageous bias circuitry.
  • 211 and 212 are possible connections to the resonator.
  • a second capacitor 231, a resistant Rb (222) and a voltage Vb (260) are shown.
  • prior art integrated resonators do not use packaged MEMS.
  • MEMS and discrete circuits using these MEMS are known.
  • Integrated resonators with unpackaged MEMS are known from literature. Variations of the present invention are possible.
  • One example is that the bond- frame does not need to be rectangular, but only needs to be closed. That can be used to optimally design electrical properties.
  • Fig. 3 shows such an example where a slot is provided as matching circuit to adapt the inductance of the bond-frame, e.g., for an antenna-matching circuit.
  • Another version could use meandered bond-frame to increase the inductance.
  • the bond- frame could even be used as an antenna for the circuit inside.
  • multilayer metals can be used below/above the bond frame. These metals are often already there for the bond- frame crossings. Using these metals can lower the resistance even further. This is important if the sealing metal alloy is not well conducting. Thick metal (e.g. Al) can be used beside the bond- frame to back-up conductivity. For electrical performance at RF it is not needed that there is a galvanic contact all over the length of the bond-frame. The (parasitic) capacitive coupling of the crossing metal can be advantageously used to guide the RF signal along the bond- frame.
  • Thick metal e.g. Al
  • the (parasitic) capacitive coupling of the crossing metal can be advantageously used to guide the RF signal along the bond- frame.
  • Another example is a partial use of the bond- frame. Therein two points, grounded to earth, are applied. The coil in between said two points does as a consequence no longer form part of a circuit. Simulations have been done and show the functionality hereof. Also designs that still include bond-frame crossings together with a partial use of the bond-frame are possible and can be provided on request.
  • Figs. 4 show schematic cross sections of a prior art RF circuit and a present RF circuit, respectively.
  • a MEMS 410
  • a conducting track 412
  • present invention a conducting track
  • 440 a silicon oxide layer
  • the present invention further comprises a cap (420), typically of silicon, glass, AI2O3, etc.
  • the MEMS switch further comprises a second capacitor C2, as e.g. in Fig. 2, in order to function properly. Said second capacitor is not shown in Fig 4b.
  • Fig. 4b2 shows an embodiment of the present invention, wherein the bond frame consists of several layers. Preferably a further metal layer is present therein, having a good conductivity, as described above. Such further metal layer is even more preferably present at the top section and/or at the bottom section of the bond frame. Even further, more than two metal layers may be present, albeit being complicated to manufacture. Also other layers, e.g. dielectric layers, may be present. Extra metal layers provide a further advantage in terms of behavior of the coil, e.g. with respect to losses.
  • Fig 4c shows an embodiment wherein an extra metal layer 460 and/or 460 are present.
  • These metal layers offer the above mentioned advantages. More preferably the extension / of the metal layer 460 and 461 is larger than the height h of the bond frame, even more preferably / > 2h. As such, the high frequency signals are better transmitted over the metal lines.
  • Fig. 4d shows a top view of the metal lines and bond frame. It can be seen that in a preferred embodiment the metal lines extend beyond the outer circumference of the bond frame and/or beyond the inner circumference thereof, even further providing improved characteristics, as mentioned above.
  • Fig 4e shows a top view of an embodiment, wherein a bond frame has a form with inner extensions (see above). Typically said extensions may extend towards the center for more than 20% of the inner diameter of the bond frame, preferably more than 30%, such as 50%.
  • the resonator can be used stand-alone as discrete component on a printed circuit board. However, also integrated filters are possible.
  • the following pictures show how the above resonators can be used to construct a band-pass filter.
  • Fig. 5 shows a simulation set-up of the layout (two resonators side-by-side, mirror- symmetrical) and Fig. 6 the simulation results.
  • a final implementation could employ 2D simulations for better accuracy, but this model already shows the feasibility, because state-of-the art transmission line models were employed.
  • TLx represent transmission lines, which actually represent the bond-ring
  • Teex represent T-shaped connections
  • COMx represent corner shaped sections
  • Zx represent terminal resistors
  • Cx represent capacitors. Typical values used in the simulation are:
  • Width w of the transmission lines, corners, Tees 100 ⁇ m (TL3,TL8), 300 ⁇ m (rest) bond-frame dimensions: 1000x1500 ⁇ m 2 Cl : tunable capacitor 2-5 pF Fig. 6 shows results of simulations. It is clearly visible that depending on values chosen for Cl, various band pass transfer characteristics are obtained with very good performance.
  • Fig. 7 envisages a design where the bond- frame is used together with internal capacitors such that it becomes self-resonant and high ohmic at the coupling ports to the bond- frame.
  • Small-band RF devices such as mechanical resonators inside the package could then be connected without the need of bond- frame crossings. This could be used, e.g., in MEMS resonator packaging where the resonance frequency is well defined by the resonator in the package. It allows flat bond-frame metals and ensures a good sealing without planarization steps or thick bond- frame metals.
  • the bond- frame can also be used as matching circuit for the acoustic resonator.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne des circuits RF intégrés et encapsulés, comprenant un cadre collé intégré. De nombreux circuits intégrés nécessitent d'être mis sous boîtier pour être protégés ou pour connecter le petit pas des broches de CI au grand pas d'une carte de circuit imprimé. On sait que les composants passifs, tels que des bobines, peuvent être intégrés, par exemple, dans des boîtiers de grille de connexion. La majorité des microsystèmes électromécaniques (MEMS) requièrent des boîtiers spéciaux, c'est-à-dire des boîtiers hermétiques, notamment les commutateurs MEMS capacitifs ou galvaniques pour RF. Un boîtier petit et rentable permettra d'obtenir un boîtier à l'échelle de la plaquette, où la plaquette MEMS elle-même forme une partie du boîtier. L'autre moitié peut être une autre plaquette collée sur la plaquette MEMS, par exemple par liaison eutectique. Le cadre collé fermé entre les plaquettes forme un élément inductif à couplage électrique.
PCT/IB2010/051111 2009-03-18 2010-03-15 Cadre collé intégré dans un circuit électronique WO2010106484A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09155497 2009-03-18
EP09155497.2 2009-03-18

Publications (1)

Publication Number Publication Date
WO2010106484A1 true WO2010106484A1 (fr) 2010-09-23

Family

ID=42320673

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/051111 WO2010106484A1 (fr) 2009-03-18 2010-03-15 Cadre collé intégré dans un circuit électronique

Country Status (1)

Country Link
WO (1) WO2010106484A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012084057A1 (fr) 2010-12-23 2012-06-28 Epcos Ag Dispositif rf et procédé de syntonisation d'un dispositif rf
US9016133B2 (en) 2011-01-05 2015-04-28 Nxp, B.V. Pressure sensor with pressure-actuated switch

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0376062A1 (fr) * 1988-12-27 1990-07-04 Eta SA Fabriques d'Ebauches Module électronique pour un objet portatif de petite dimension, tel qu'une carte ou une clef, à circuit intégré, et procédé de fabrication de tels modules
US20030045044A1 (en) 2001-08-29 2003-03-06 Honeywell International Inc. Package with integrated inductor and/or capacitor
US20050168306A1 (en) 2000-11-29 2005-08-04 Cohn Michael B. MEMS device with integral packaging
JP2005317565A (ja) * 2004-04-26 2005-11-10 Matsushita Electric Ind Co Ltd 半導体パッケージ
WO2007001976A2 (fr) 2005-06-20 2007-01-04 R828 Llc Structure de semi-conducteur avec element radioelectrique
EP1746866A1 (fr) * 2005-07-19 2007-01-24 Samsung Electronics Co., Ltd. Puce enfermée avec inductance interne
US20070290326A1 (en) 2006-06-19 2007-12-20 Northrop Grumman Space & Missions Systems Corp. Multi-dimensional wafer-level integrated antenna sensor micro packaging

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0376062A1 (fr) * 1988-12-27 1990-07-04 Eta SA Fabriques d'Ebauches Module électronique pour un objet portatif de petite dimension, tel qu'une carte ou une clef, à circuit intégré, et procédé de fabrication de tels modules
US20050168306A1 (en) 2000-11-29 2005-08-04 Cohn Michael B. MEMS device with integral packaging
US20030045044A1 (en) 2001-08-29 2003-03-06 Honeywell International Inc. Package with integrated inductor and/or capacitor
JP2005317565A (ja) * 2004-04-26 2005-11-10 Matsushita Electric Ind Co Ltd 半導体パッケージ
WO2007001976A2 (fr) 2005-06-20 2007-01-04 R828 Llc Structure de semi-conducteur avec element radioelectrique
EP1746866A1 (fr) * 2005-07-19 2007-01-24 Samsung Electronics Co., Ltd. Puce enfermée avec inductance interne
US20070290326A1 (en) 2006-06-19 2007-12-20 Northrop Grumman Space & Missions Systems Corp. Multi-dimensional wafer-level integrated antenna sensor micro packaging

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012084057A1 (fr) 2010-12-23 2012-06-28 Epcos Ag Dispositif rf et procédé de syntonisation d'un dispositif rf
DE112010006074T5 (de) 2010-12-23 2013-10-10 Epcos Ag HF-Vorrichtung und Verfahren zum Abstimmen einer HF-Vorrichtung
JP2014506412A (ja) * 2010-12-23 2014-03-13 エプコス アクチエンゲゼルシャフト Ｒｆ装置およびｒｆ装置のチューニング方法
US9300270B2 (en) 2010-12-23 2016-03-29 Qualcomm Technologies, Inc. RF device and method for tuning an RF device
US9016133B2 (en) 2011-01-05 2015-04-28 Nxp, B.V. Pressure sensor with pressure-actuated switch

Similar Documents

Publication Publication Date Title
US11456721B2 (en) RF front end module including hybrid filter and active circuits in a single package
KR100880490B1 (ko) 분파기
EP1553700B1 (fr) Dispositif à ondes acoustiques de surface
US7408434B2 (en) Inductor embedded in substrate, manufacturing method thereof, micro device package, and manufacturing method of cap for micro device package
JP4778228B2 (ja) 多層基板を備えた電子部品
US6075427A (en) MCM with high Q overlapping resonator
US7978031B2 (en) High frequency module provided with power amplifier
US7365628B2 (en) Semiconductor apparatus
KR20060136202A (ko) 기판 매립형 인덕터 및 그 제조방법과, 마이크로 소자패키지 및 이 마이크로 소자 패키지의 캡 제조방법
EP1427051A1 (fr) Substrat pour module hf
US20110309895A1 (en) Multilayer filter
KR20080092853A (ko) 고성능 필터용 콤팩트 코일
JP5051062B2 (ja) 薄膜バラン
US20160173059A1 (en) Electrical Component Suitable For Miniaturization with Reduced Coupling
CN111740722A (zh) 滤波器和射频通信设备
JP2005268878A (ja) アンテナ共用器
US7341888B2 (en) Balance filter packaging chip having balun mounted therein and manufacturing method thereof
JP2011193080A (ja) 分波器
WO2010106484A1 (fr) Cadre collé intégré dans un circuit électronique
WO2017188062A1 (fr) Appareil de filtre à ondes élastiques et multiplexeur
CN109300881B (zh) 电子封装件暨基板结构与制法
CN212627826U (zh) 滤波器和射频通信设备
JP2014506412A (ja) Ｒｆ装置およびｒｆ装置のチューニング方法
TWI361479B (en) Integrated circuit package having inductance loop formed from a bridge interconnect
CN116544640A (zh) 用于高频电流隔离器的电容耦合谐振器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10710445

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10710445

Country of ref document: EP

Kind code of ref document: A1