WO2012084057A1 - Dispositif rf et procédé de syntonisation d'un dispositif rf - Google Patents

Dispositif rf et procédé de syntonisation d'un dispositif rf Download PDF

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Publication number
WO2012084057A1
WO2012084057A1 PCT/EP2010/070686 EP2010070686W WO2012084057A1 WO 2012084057 A1 WO2012084057 A1 WO 2012084057A1 EP 2010070686 W EP2010070686 W EP 2010070686W WO 2012084057 A1 WO2012084057 A1 WO 2012084057A1
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WO
WIPO (PCT)
Prior art keywords
tunable
terminal
component
capacitor
substrate
Prior art date
Application number
PCT/EP2010/070686
Other languages
English (en)
Inventor
Zhidong Liu
Klaus Reimann
Kevin R. Boyle
Maurice De Jongh
Jeroen Bielen
Original Assignee
Epcos Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag filed Critical Epcos Ag
Priority to US13/996,853 priority Critical patent/US9300270B2/en
Priority to JP2013545064A priority patent/JP5752803B2/ja
Priority to DE112010006074T priority patent/DE112010006074T5/de
Priority to KR1020137017483A priority patent/KR20140040073A/ko
Priority to PCT/EP2010/070686 priority patent/WO2012084057A1/fr
Publication of WO2012084057A1 publication Critical patent/WO2012084057A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0153—Electrical filters; Controlling thereof
    • H03H7/0161—Bandpass filters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/04—Networks or arrays of similar microstructural devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01—Details
    • H01G5/014—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01—Details
    • H01G5/019—Means for correcting the capacitance characteristics

Definitions

  • the present invention is related to an RF device, a system comprising an RF device and a method for tuning an RF device.
  • An RF device often comprises a component with a tunable capacitance value such as a varactor, a diode, or a micro- electro-mechanical system capacitor, abbreviated MEMS
  • Document WO 2006/129239 Al is related to a planar antenna assembly with impedance matching.
  • a circuit comprises tunable capacitors which are connected in series.
  • the closed bond frame forms an inductive element. Moreover, a series circuit of a MEMS capacitor and a further capacitor couples two areas of the bond frame. A terminal of the MEMS capacitor is
  • a MEMS system which comprises a capacitor switch array.
  • the capacitor switch array comprises series circuits of a capacitor and a MEMS switch.
  • the capacitance value of the capacitor switch array is tuned by setting the MEMS switches in an open or a closed state.
  • An RF device comprises a substrate and a series circuit of a tunable RF component and a DC blocking capacitor.
  • the series circuit of the tunable RF component and the DC blocking capacitor is arranged on the substrate and couples an RF signal terminal to a fixed voltage terminal.
  • the fixed voltage terminal is electrically isolated from the RF signal terminal.
  • the tunable RF component is coupled to the RF signal terminal.
  • the DC blocking capacitor is coupled to the fixed voltage terminal.
  • a driver terminal is coupled to the tunable RF component.
  • the RF device Since the DC blocking capacitor is connected to the fixed voltage terminal, parasitic effects from the DC blocking capacitors such as parasitic capacitors have constant values which results in a reduced influence of the parasitic effects on the RF device.
  • the RF device has a lower capacitance value and a higher capacitance ratio when the tunable RF component is tuned between its minimum and its maximum capacitance value and is connected to the RF signal terminal.
  • the driver terminal is coupled to a node between the tunable RF component and the DC blocking
  • the driver terminal is coupled to a control terminal of the tunable RF component.
  • a reference potential terminal is coupled to the RF signal terminal such that the reference potential terminal is DC grounded.
  • the RF signal terminal is, for example, connected to the reference potential terminal via a component or a circuit which allow a DC current flow between the RF signal terminal and the reference potential terminal.
  • the RF signal terminal can be connected to the reference potential terminal via an antenna, an inductor or a resistor.
  • a co-design of a biased tunable impedance device and RF components is performed.
  • the reference potential terminal is coupled to the fixed voltage terminal.
  • the fixed voltage terminal and the RF signal terminal are both DC grounded, but only the fixed voltage terminal is AC grounded.
  • the reference potential terminal provides a ground potential.
  • the fixed voltage terminal has the ground potential.
  • a RF input signal is provided to the RF signal terminal.
  • the voltage of the RF input signal is different from the ground potential.
  • the substrate is a semiconductor substrate.
  • the substrate is a silicon substrate.
  • substrate can be a silicon wafer or a silicon chip.
  • the substrate comprises a single crystal of the semiconductor .
  • the tunable RF component is one of a group comprising a varactor diode, a PIN diode, a MEMS capacitor such as a capacitor with a moveable capacitor electrode, a capacitor with a tunable dielectric layer such as a ferro- electric layer, a galvanic MEMS component such as a micro relay and a p-channel high-electron-mobility transistor, abbreviated pHEMT .
  • PIN diode is the abbreviation for a positively-doped/intrinsic/negatively-doped diode.
  • the varactor diode, the PIN diode, the MEMS capacitor and the capacitor with the tunable dielectric layer obtain a spectrum of capacitance values between a minimum capacitance value and a maximum capacitance value depending on the driver signal.
  • the galvanic MEMS component has an open and a closed state such that the series circuit of the tunable RF component and the DC blocking capacitor either show the capacitance value of the blocking capacitor or an approximately zero
  • the RF device comprises a cap and a bond frame.
  • the bond frame connects the cap to a first surface of the substrate.
  • a cavity is enclosed by the cap and the substrate.
  • the cavity can be filled with a gas, such as air.
  • the tunable RF component and the DC blocking capacitor can be arranged inside the cavity on the first surface of the substrate.
  • the cap encapsulates the substrate such that the influence of disturbances on the tunable RF component and the DC blocking capacitor are reduced.
  • a system comprises the RF device and an antenna which is coupled to the RF signal terminal.
  • the antenna is DC grounded or a connection line between the RF signal terminal and the antenna is DC grounded. By the DC grounding, a conductive path couples the RF signal terminal to the reference
  • the driver signal controls the DC voltage across the tunable RF component such that the capacitance value of the tunable RF component is set.
  • the system is applied in a mobile phone, a portable device, an RF-ID reader or a miniaturized, adaptive RF module.
  • a method for tuning an RF device comprises providing an RF input signal that is DC grounded to an RF signal terminal and providing a ground potential to a fixed voltage terminal.
  • a series circuit of a tunable RF component and a DC blocking capacitor is arranged on a substrate and couples the RF signal terminal to the fixed voltage terminal.
  • the fixed voltage terminal is electrically isolated from the RF signal terminal.
  • the tunable RF component is coupled to the RF signal terminal.
  • the DC blocking capacitor is coupled to the fixed voltage terminal.
  • a driver signal controls the tunable RF component.
  • the RF input signal is DC grounded by a resistive or an inductive connection of the RF signal
  • the ground potential is provided at the reference potential terminal.
  • the RF signal terminal is not AC grounded.
  • the RF input signal is different from the ground potential.
  • the RF input signal is free of a DC voltage.
  • FIGs. 1 to 8 show exemplary embodiments of a system
  • FIGs. 9 to 13 show exemplary embodiments of an RF device.
  • FIG. 1 shows an exemplary embodiment of a system 10
  • the RF device 11 comprises a series circuit 12 having a tunable RF component 13 and a DC blocking capacitor 14. Moreover, the RF device 11 has an RF signal terminal 15 and a fixed voltage terminal 16. The fixed voltage terminal 16 is directly and permanently connected to a reference potential terminal 17. The fixed voltage terminal 16 is alternatively connected to a supply voltage terminal. A terminal of the tunable RF component 13 is connected to the fixed voltage terminal 16. Correspondingly, a terminal of the DC blocking capacitor 14 is connected to the RF signal terminal 15.
  • the RF device 11 comprises a driver terminal 18 which is connected to a node between the tunable RF component 13 and the DC blocking capacitor 14.
  • a driver circuit 19 is connected to the driver terminal 18.
  • the driver circuit 19 comprises a series connection of a voltage source 20 and a resistor 21.
  • the driver circuit 19 is connected between the driver terminal 18 and the reference potential terminal 17.
  • the driver circuit 19 is designed as a DC bias circuit.
  • a first parasitic capacitor 22 is arranged between the
  • a second parasitic capacitor 23 connects the reference potential terminal 17 and a node between the tunable RF component 13 and the fixed voltage terminal 16.
  • a second parasitic capacitor 23 connects the reference
  • a third parasitic capacitor 24 couples the reference potential terminal 17 to a node between the DC blocking capacitor 14 and the RF signal terminal 15.
  • the system 10 further comprises a RF circuit 25 having further RF components.
  • the RF circuit 25 is connected to the RF signal terminal 15.
  • an RF input terminal 26 is connected to a node between the RF circuit 25 and the RF signal terminal 15.
  • the dashed rectangular line indicates the package of the RF device 11.
  • the RF device 11 provides a tunable capacitance value.
  • An RF input signal SRF can be tapped at the RF input terminal 26.
  • the RF input signal SRF is applied to the RF circuit 25 and to the RF signal terminal 15.
  • the driver circuit 19 feds a driver signal SD to the driver terminal 18.
  • the driver signal SD is provided across the tunable RF component 13 and sets the DC voltage across the tunable RF component 13.
  • the DC blocking capacitor 14 blocks a DC current from the RF signal terminal 15 to the tunable RF component 13.
  • the overall capacitance value CS of the series circuit 12 can be calculated according to the following equation, if the parasitic capacitors 22, 23, 24 are neglected:
  • CMEMS + CDC wherein CMEMS is the capacitance value of the tunable RF component 13 and CDC is the capacitance value of the DC blocking capacitor 14. Since the capacitance value CMEMS is smaller than the capacitance value CDC, the capacitance value CS of the series circuit 12 is approximately equal to the capacitance value CMEMS of the tunable RF component 13. If the parasitic capacitors 22, 23, 24 are not neglected, the capacitance value CS of the series circuit 12 can be
  • C2P + CMEMS CDC wherein C2P is the capacitance value of the second parasitic capacitor 23 and C3P is the capacitance value of the third parasitic capacitor 24.
  • the tunable RF component 13 In the "closed” state, the tunable RF component 13 obtains a high capacitance value, whereas in an "open” state, the tunable RF component 13 obtains a low capacitance value.
  • the capacitance ratio between the "close” and "open” states for the series circuit 12 shown in Figure 1 is
  • Figure 1 shows a typical configuration for a shunted RF device 11, wherein only one port of the RF device 11 needs biasing.
  • the RF device 11 can be named as a MEMS switch .
  • RF components are usually not DC-grounded and the DC voltage on RF components might differ from application to
  • FIG. 2 shows a further exemplary embodiment of the system 10.
  • the system 10 comprises an antenna 30 that is connected to the RF signal terminal 15.
  • the system 10 is a MEMS-switched antenna arrangement .
  • FIG. 3 shows an exemplary embodiment of the system 10
  • the system 10 shown in Figure 3 is a further development of the system shown in Figures 1 and 2.
  • the series circuit 12 is arranged in such a way that a terminal of the tunable RF component 13 is
  • the tunable RF component 13 is an adjustable RF component or a variable RF component.
  • the component 13 is realized as tunable capacitor.
  • the antenna 30 is connected to the RF signal terminal 15.
  • the RF device 11 is implemented as a MEMS device.
  • the antenna 30 is implemented such that a DC ground potential is applied by the antenna 30 to the RF signal terminal 15.
  • the driver circuit 19 is connected between the driver
  • the driver signal SD can set the DC voltage between the first and the second terminal of the tunable RF component 13.
  • the capacitance value of the tunable RF component 13 is solely controlled by the driver signal SD and not by the RF input signal SRF.
  • the first parasitic capacitor 22 couples a node between the tunable RF component 13 and the RF signal terminal 15 to the reference potential terminal 17.
  • the third parasitic capacitor 24 connects the reference potential terminal 17 to a node between the DC blocking capacitor 14 and the fixed voltage terminal 15.
  • the three parasitic capacitors 22, 23, 24 are located at the same terminals of the tunable RF component 13 and the DC blocking capacitor 14 such as in Figures 1 and 2.
  • the capacitance value CS of the series circuit 12 can be calculated according to the following equations:
  • CDC is the capacitance value of the DC blocking capacitor 14
  • CMEMS is the capacitance value of the tunable RF component 13
  • C1P is the capacitance value of the first parasitic capacitor 22
  • C2P is the capacitance value of the second parasitic capacitor 23.
  • the capacitance value CS of the RF device 11 according to Figure 3 is smaller than the capacitance value CS of the RF device 11 according to Figure 1. Further on, the capacitance ratio of the RF device 11 of Figure 3 is larger than the capacitance ratio of the RF device 11 according to Figure 1. This is for example the case, if the DC blocking capacitor 14 adds a lot of parasitic effects or the capacitance value C2P is not smaller than the capacitance value C1P.
  • the RF device 11 is directly connected with the DC-grounded antenna 30.
  • the system 10 not only minimises the parasitic effects from the DC blocking
  • FIG. 3 a co-design of a biased tunable impedance device such as the RF device 11 and RF components such as the antenna 30 is described. By means of the antenna 30 that is DC grounded, the system 10 is optimised.
  • the advantages of the RF device 11 according to Figure 3 in comparison to the RF device 11 of Figure 1 are:
  • the RF device 11 in Figure 3 has lower loss, i.e. higher quality factor.
  • the RF device 11 in Figure 3 provides a lower minimum capacitance.
  • the RF device 11 in Figure 3 has a higher capacitance ratio between the "close” and "open” states.
  • a co-design of the RF device 11 that can be implemented as MEMS device and RF components such as the RF circuit 25 and the antenna 30 is described.
  • the RF device 11 is in shunt with the DC-grounded antenna 30 that means in a parallel circuit with the antenna 30.
  • the RF device 11 comprises the tunable RF component 13, a silicon die and a package that seals the MEMS from humidity and other
  • the bias feed point that is the driver terminal 18 has a lower RF voltage value due to the voltage division between the tunable RF component 13 and the DC blocking capacitor 14, and hence dissipates less power that means loss into the bias resistor 21.
  • the tunable RF component 13 can be implemented as a RF switch.
  • the RF switch can be designed as a RF MEMS switch.
  • the RF MEMS switch can be realized as a micro relay.
  • the driver circuit 19 is connected to a control terminal of the tunable RF component 13 and not to the node between the tunable RF component 13 and the DC blocking capacitor 14.
  • the MEMS switch has a DC-ground at the RF input port 15.
  • the RF MEMS switch is an example for a galvanic MEMS component.
  • the tunable RF component 13 can comprise a varactor diode, a PIN diode, a capacitor with a tunable dielectric layer such as a
  • ferroelectric layer or a pHEMT .
  • FIG. 4 shows a further exemplary embodiment of the system according to the principle presented.
  • the system 10 of Figure 4 is a further development of the system explained by Figures 1 to 3.
  • the antenna 30 is realized as a micro-strip antenna.
  • the antenna 30 is implemented as a planar inverted F-antenna, abbreviated PIFA.
  • the antenna 30 comprises a conducting line 31 which is arranged on a printed circuit board 32,
  • the antenna 30 comprises a pin 33 which is coupled to a reference potential terminal of the PCB 32.
  • the pin 33 of the antenna 30 is designed as a shorting pin.
  • the antenna 30 is realized as a DC grounded antenna.
  • Figure 4 illustrates a co-design of a MEMS device and RF components.
  • FIG. 5 shows a further exemplary embodiment of the system according to the principle presented.
  • the system 10 depicted in Figure 5 is a further development of the system shown in Figures 1 to 4.
  • the DC blocking capacitor 14 is realized as an additional tunable RF component 35.
  • the additional tunable RF component 35 is designed such that it operates as a DC blocking capacitor.
  • the driver signal SD is applied to the tunable RF component 13 and to the additional tunable RF component 35. Since both capacitors 13, 35 of the series circuit 12 are tunable, the capacitance ratio is further increased.
  • the antenna 30 acts as an RF component with a DC ground.
  • the RF device 11 is realized as an RF MEMS matrix.
  • the RF MEMS matrix is a MEMS matrix in series.
  • FIG. 6 shows a further exemplary embodiment of the system according to the principle presented.
  • the system 10 of Figure 6 is a further development of the system described by Figures 1 to 5.
  • the RF device 11 additionally comprises a further series circuit 40 which comprises a further tunable RF component 41 and a further DC blocking capacitor 42.
  • the further DC blocking capacitor 42 is connected to the fixed voltage terminal 16.
  • the RF device 11 is connected to the further tunable RF component 41.
  • a conducting line of the system 10 connects the RF signal terminal 15 to the further RF signal terminal 43.
  • the RF device 11 is realized as an RF MEMS matrix.
  • the antenna 30 is an example for an RF component with a DC ground.
  • the further series circuit 40 obtains a further first, a further second and a further third parasitic
  • a further driver terminal 47 is connected to a node between the further tunable RF component 41 and the further DC blocking capacitor 42.
  • a further driver circuit 48 couples the further driver terminal 47 to the reference potential terminal 17 and comprises a further voltage source 49 and a further resistor 50.
  • the RF device 11 comprises a MEMS matrix in parallel.
  • the DC bias ports 18, 47 can control each MEMS switch or variable capacitor
  • the RF device 11 can be formed as a MEMS matrix that includes more than one MEMS switch in series or in parallel, as shown in Figure 5 and 6.
  • the further series circuit 40 is arranged between the RF signal terminal 15 and the fixed voltage terminal 16.
  • the series circuit 12 and the further series circuit 40 are connected inside the RF device 11.
  • the further RF signal terminal 43 can be omitted.
  • the driver circuit 19 and the further driver circuit 48 are realized at least partially outside of the RF device 11.
  • FIG. 7 shows a further exemplary embodiment of a system according to the principle presented that is a further development of the system shown in Figures 1 to 6.
  • the system 10 comprises an inductor 51 that is connected between the RF signal terminal 15 and the reference potential terminal 17.
  • the inductor 51 is formed as a coil.
  • the system 10 is realized as a bandpass filter.
  • the bandpass filter has a first order.
  • the system 10 can be integrated in a TV tuner.
  • the driver circuit 19 is realized partly on the RF device 11 and partly in the system 10 outside of the RF device 11.
  • the RF device 11 comprises an impedance 52 which is arranged inside the RF device 11.
  • the system 10 comprises the voltage source 20.
  • the voltage source 20 is realized outside of the RF device 11.
  • the driver circuit 19 comprises the impedance 52 and the voltage source 20.
  • the inductor 51 provides a DC grounding of the RF terminal 15.
  • the antenna 30 is connected to the RF terminal 15.
  • the antenna 30 is grounded.
  • the antenna 30 replaces the
  • FIG. 8 shows a further exemplary embodiment according to the principle presented.
  • the system 10 shown in Figure 8 is a further development of the system shown in Figures 1 to 7.
  • the RF device 11 comprises the series circuit 12 and the further series circuit 40 is shown in FIG. 6.
  • the further driver circuit 48 comprises a further impedance 54 and the further voltage source 49.
  • the further impedance 54 is realized inside the RF device 11.
  • the further voltage source 49 is realized on the system 10 outside of the RF device 11.
  • the inductor 51 couples the RF signal terminal 15 to the further RF signal terminal 43.
  • the antenna 30 is connected to the RF signal terminal 15.
  • the antenna 30 couples the RF signal terminal 15 to the reference potential terminal 17.
  • a transceiver circuit 56 is connected to the further RF signal terminal 43. In Figure 8, a substitute resistance is shown for the transceiver circuit 56.
  • the system 10 comprises a matching circuit, whereas the antenna 30 and the inductor 51 provide a DC ground.
  • the proposed principle can also be used for MEMS-switched RF filters or MEMS-switched impedance matching networks or any MEMS-switched circuit, provided that a DC-ground naturally exists at the RF signal terminal 15 of the RF device 11 in shunt.
  • the tunable RF component 13 can be a single MEMS capacitor or a MEMS capacitor array.
  • the RF device 11 can be fabricated in one package or in several packages.
  • a further RF device comprises the further series circuit 40.
  • the series circuit 12 and the further series circuit 40 are separated in two RF devices each having its package.
  • FIG. 9 shows an exemplary embodiment of the RF device
  • the RF device 11 shown in Figure 9 is a further development of the RF device 11 shown in Figures 1 to 8.
  • the RF device 11 comprises a
  • the RF device 30 comprises a cap 61 and a bond frame 62.
  • the cap 61 is coupled to the substrate 60 via the bond frame 62.
  • the bond frame 62 provides a hermetic seal of a cavity 63 between the cap 61 and the substrate 60.
  • the cap 61 is fixed to a first surface of the substrate 60.
  • the RF device 11 comprises a first and a second feed-through 64, 65.
  • the first feed-through 64 connects the RF signal terminal 15 to a first terminal of the tunable RF component 13.
  • the second feed-through 65 connects the fixed voltage terminal 16 to a first terminal of the DC blocking capacitor 14.
  • a first feed-through capacitor 66 couples the first terminal of the tunable RF component 13 to the bond frame 62.
  • a second feed-through capacitor 67 couples the first terminal of the DC blocking capacitor 14 to the bond frame 62.
  • the bond frame 62 is connected to the reference potential terminal 17. Thus, the bond frame 62 is grounded.
  • the first and the second feed-through capacitors 66, 67 are parasitic capacitors having capacitance values CB1, CB2, respectively.
  • a cross-section of the RF device 11 is shown on the right side of FIG. 9.
  • the substrate 60 is a silicon substrate.
  • the silicon is off high resistivity.
  • the cap 61 is a silicon micro-machined cap.
  • the bond frame 62 comprises a eutectic compound or an AuSn solder.
  • the tunable RF component 13 and the DC blocking capacitor 14 are located on the first surface of the substrate 60.
  • the DC blocking capacitor 14 is realized as a metal-insulator-metal capacitor, abbreviated MIM
  • the DC blocking capacitor 14 is thus implemented as a parallel plate capacitor.
  • the tunable RF component 13 comprises a first and a second electrode 68, 69 which are fabricated as a fixed and a moving electrode.
  • the driver signal SD changes the distance between the first electrode 69 and the second electrode 68.
  • the capacitance value of the tunable RF component 13 is
  • a first and a second dielectric layer 70, 71 are deposited on the substrate 60.
  • the first feed-through 64 comprises a first conducting line 73 between the first and the second dielectric layer 70, 71 which connects one of the electrodes of the tunable RF component 13 to the RF signal terminal 15.
  • a second conducting line 74 connects the first terminal of the DC blocking capacitor 14 to the fixed voltage terminal 16.
  • the conducting lines 73, 74 are electrically isolated from the bond frame 62.
  • the second dielectric layer 71 provides the electric isolation from the first and the second conducting lines 73, 74 to the bond frame 62.
  • a silicon die comprises the substrate 60, the tunable RF component 13 and the DC blocking capacitor 14.
  • the cap 61 and the bond frame 62 form a package that seals the silicon die and mainly the tunable RF component 13 from the humidity and gas pressure of the ambient gas.
  • the bond frame 62 is grounded to avoid cross-coupling between several signals.
  • the RF device 11 further comprises a third feed-through.
  • the driver terminal 18 can be connected from outside of the RF device 11.
  • the voltage source 20 of the driver circuit 19 is coupled via the third feed-through to the impedance 52 of the driver circuit 19.
  • FIG. 10 shows a further exemplary embodiment of an RF device according to the principle presented.
  • the RF device 11 shown in Figure 10 is a further development of the RF device 11 shown in Figures 1 to 9.
  • the bond frame 62 is realized as a floating bond frame.
  • the bond frame 62 is not electrically connected to the reference potential terminal 17 or to the RF signal terminal 15 or to the fixed voltage terminal 16.
  • the RF device 11 comprises a bond frame capacitor 75 which connects the bond frame 62 to the reference potential
  • the bond frame capacitor 75 preferably can be a parasitic capacitor. Some RF devices, notably the MEMS devices or components need hermetic packaging. A sealing can be achieved by bonding a top substrate with a cavity on the device. A metallic seal ring can be used at lower bonding temperatures and achieves a good hermeticity.
  • the cap 62 and the bond frame 62 cause the first and the second parasitic feed-through capacitors 66, 67 having the capacitance values CB1 and CB2 of the signal lines to the bond ring 62, as shown in Figure 9 and 10.
  • the effective parasitic capacitance CEFF to ground at the RF signal terminal 15 can be calculated according to the
  • the value CEFF is lower than the capacitance value CB1 of the capacitor 66.
  • parasitic effects are reduced by co-designing the system 10 together with the RF device 11.
  • the floating bond frame 62 is advantageously suited for shunt configurations where cross-coupling is less a concern. In some applications, for example if there is only one RF function per package, then a co-design of the package and the board on which the RF device 11 is arranged as well as the surrounding is advantageously performed.
  • FIG. 11 shows a further exemplary embodiment of an RF device according to the principle presented.
  • the RF device 11 illustrated in Figure 11 is a further development of the RF device 11 depicted in Figures 1 to 10.
  • the RF device 11 comprises the first feed-through 64.
  • the first feed-through 64 is realized as a bond frame crossing.
  • the second feed- through 65 is omitted. Instead, the bond frame 62 is
  • the bond frame 62 is used as an RF feed at one side of the RF device 11.
  • the metal of the bond frame 62 is applied as a feedline into the package.
  • the fixed voltage terminal 16 is connected directly to the bond frame 62 and the metal of the bond frame 62 extends into the package and is connected to the top metal of the MEMS/MIM devices. The series losses in this connection are substantially reduced and, therefore, the quality-factor of the RF device 11 becomes higher.
  • the ground potential GND is connected to the fixed voltage terminal 16 as well and the bond frame capacitor 75 that is a parasitic capacitor is shorted.
  • FIG. 11 illustrates a further exemplary co-design of MEMS device and RF components.
  • FIG. 12 shows a further exemplary embodiment of an RF device according to the principle presented.
  • the RF device 11 of Figure 12 is a further development of the RF device 11 of Figures 1 to 11.
  • the tunable RF component 13 comprises the first electrode 68 which is realized as a fixed button electrode.
  • the first electrode 68 is arranged on the
  • the second electrode 69 of the tunable RF component 13 is realized as a moving electrode.
  • An isolator 80 is deposited on the first electrode 68.
  • the isolator 80 fills only a part of a gap 87 between the first and the second electrode 68, 69.
  • the second electrode 69 is designed such that the second electrode 69 can move towards and away from the isolator 80.
  • the gap 87 between the first and the second electrode 68, 69 is realized at least partially as an air gap.
  • the second electrode 69 has a distance D to the isolator 80.
  • the first parasitic capacitor 22 results from the capacitance of the first electrode 68 to the backside of the substrate 60.
  • the backside of the substrate 60 is covered by a metal layer 81.
  • the metal layer 81 is connected to the reference potential terminal 17. Furthermore, the RF device 11 comprises the DC blocking capacitor 14. Thus, the DC blocking capacitor 14 is connected in parallel to the first parasitic capacitor 22. Thus, the capacitance value CP1 of the first parasitic capacitor 22 is incorporated into the capacitance value CDC of the DC blocking capacitor 14.
  • the tunable RF component 11 that is a configurable element is most likely asymmetric in its vertical construction.
  • a good example is a planar capacitor, which in the MEMS case would provide a higher capacitance density than symmetric,
  • An asymmetric device has also different parasitic capacitances at its terminals. It
  • FIG. 12 shows a cross- section of the tunable RF component 13 that is a MEMS
  • FIG. 13 shows a further exemplary embodiment of the RF device according to the principle presented.
  • the RF device 11 shown in Figure 13 is a further development of the RF device 11 shown in Figures 1 to 12.
  • the tunable RF component 13 and the DC blocking capacitor 14 form a stack 83.
  • the stack 83 is realized on the first surface of the substrate 60.
  • the DC blocking capacitor 14 is arranged between the tunable RF component 13 and the substrate 60.
  • a first electrode 85 of the DC blocking capacitor 14 is arranged on the substrate 60.
  • the substrate 60 is realized as a dielectric material.
  • the substrate 60 is a PCB or a ceramic such as a high
  • a further isolator 84 is deposited on the first electrode 85 of the DC blocking capacitor 14.
  • a second electrode 86 of the DC blocking capacitor 14 is arranged on the further isolator 84.
  • the isolator 80 is deposited on the second electrode 86 of the DC blocking capacitor 14.
  • the second electrode 86 of the DC blocking capacitor 14 also forms the first electrode 68 of the tunable RF component 13.
  • the tunable RF component 13 and the DC blocking capacitor 14 are parallel plate capacitors and have a common plate.
  • the common plate is connected to the driver terminal 18.
  • the gap 87 which comprises the isolator 80 and the air gap separates the first electrode 68 from the second electrode 69 of the tunable RF component 13.
  • the parasitic capacitors of the tunable RF component 13 are reduced.
  • the third parasitic capacitor 24 couples the first electrode 85 of the DC
  • the substrate 60 is a semiconductor substrate on which an isolating layer is deposited.
  • an isolation of the first electrode 85 of the DC blocking capacitor 14 to the substrate 60 is provided.
  • the lower part of Figure 13 shows a combination of the cross- sections shown in FIG. 9 and 13.
  • the first and the second dielectric layer 70, 71 of FIG. 9 are used as isolator 80 and as further isolator 84.
  • the first conducting line 73 is arranged between the isolator 80 and the further isolator 84.
  • the second conducting line 74 is located between the isolator 80 and the further isolator 84. Openings in the isolator 80 allow an electrical contact to the RF signal terminal 15 and to the fixed voltage terminal 16.
  • the RF device 11 of Figure 13 is similar to the RF device 11 of Figure 12 but with integrated DC decoupling capacitor.
  • the parasitic capacitance is now shifted to the bottom electrode 85 of the DC blocking capacitor 14.
  • the DC blocking capacitor 14 is integrated below the tunable RF component 13 that is a MEMS capacitor.
  • the connection of the bias to the bottom electrode avoids actuation coupling of the anchors through the substrate 60.
  • the anchors of the tunable RF component 13 are structures on the substrate 60 which hold the second electrode 69 above the first electrode 68.
  • electrode 69 is the movable electrode and comprises a
  • the first electrode 68 is the fixed electrode and is designed as backplate.
  • the substrate 60 preferably can be a semiconducting substrate. By co-design of one RF function in one package, the parasitic capacitances can be reduced also in case the bond frame 62 is not grounded.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)

Abstract

L'invention concerne un dispositif RF (11) comprenant un substrat (60) et un circuit en série (12) d'un composant RF accordable (13) et un condensateur de blocage continu (14). Le circuit en série (12) est disposé sur le substrat (60) et couple une borne de signal RF (15) avec une borne de tension fixe (16) qui est électriquement isolée de la borne de signal RF (15). Le composant RF accordable (13) est couplé à la borne de signal RF (15), le condensateur de blocage continu (14) est couplé à la borne de tension fixe (16) et une borne d'attaque (18) est couplée au composant RF accordable (13).
PCT/EP2010/070686 2010-12-23 2010-12-23 Dispositif rf et procédé de syntonisation d'un dispositif rf WO2012084057A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/996,853 US9300270B2 (en) 2010-12-23 2010-12-23 RF device and method for tuning an RF device
JP2013545064A JP5752803B2 (ja) 2010-12-23 2010-12-23 Ｒｆ装置およびｒｆ装置のチューニング方法
DE112010006074T DE112010006074T5 (de) 2010-12-23 2010-12-23 HF-Vorrichtung und Verfahren zum Abstimmen einer HF-Vorrichtung
KR1020137017483A KR20140040073A (ko) 2010-12-23 2010-12-23 Rf 장치 및 rf 장치를 조정하기 위한 방법
PCT/EP2010/070686 WO2012084057A1 (fr) 2010-12-23 2010-12-23 Dispositif rf et procédé de syntonisation d'un dispositif rf

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2010/070686 WO2012084057A1 (fr) 2010-12-23 2010-12-23 Dispositif rf et procédé de syntonisation d'un dispositif rf

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WO2012084057A1 true WO2012084057A1 (fr) 2012-06-28

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US (1) US9300270B2 (fr)
JP (1) JP5752803B2 (fr)
KR (1) KR20140040073A (fr)
DE (1) DE112010006074T5 (fr)
WO (1) WO2012084057A1 (fr)

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JP5993026B2 (ja) * 2011-12-09 2016-09-14 エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ シングルエンド増幅器入力ポートを有するダブルバックプレートｍｅｍｓマイクロフォン
CN109327200A (zh) * 2018-11-27 2019-02-12 中电科技德清华莹电子有限公司 一种声表面波谐振结构滤波器

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US9300270B2 (en) 2016-03-29
DE112010006074T5 (de) 2013-10-10
JP2014506412A (ja) 2014-03-13
JP5752803B2 (ja) 2015-07-22
KR20140040073A (ko) 2014-04-02
US20130335168A1 (en) 2013-12-19

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