WO2010105617A3 - Creuset pour fondre et cristalliser un métal, un semi-conducteur ou un alliage métallique, composant pour un corps de base d'un creuset et procédé de fabrication d'un creuset - Google Patents
Creuset pour fondre et cristalliser un métal, un semi-conducteur ou un alliage métallique, composant pour un corps de base d'un creuset et procédé de fabrication d'un creuset Download PDFInfo
- Publication number
- WO2010105617A3 WO2010105617A3 PCT/DE2010/000338 DE2010000338W WO2010105617A3 WO 2010105617 A3 WO2010105617 A3 WO 2010105617A3 DE 2010000338 W DE2010000338 W DE 2010000338W WO 2010105617 A3 WO2010105617 A3 WO 2010105617A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- component
- metal
- crystallizing
- melting
- Prior art date
Links
- 238000002844 melting Methods 0.000 title abstract 4
- 230000008018 melting Effects 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 4
- 229910001092 metal group alloy Inorganic materials 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/10—Crucibles
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62665—Flame, plasma or melting treatment
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- C04B35/63444—Nitrogen-containing polymers, e.g. polyacrylamides, polyacrylonitriles, polyvinylpyrrolidone [PVP], polyethylenimine [PEI]
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- C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Silicon Compounds (AREA)
- Ceramic Products (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
L'invention concerne un creuset pour fondre et cristalliser un métal, un matériau semi-conducteur ou un alliage métallique, une paroi d'un corps de base de creuset étant au moins partiellement composée d'un matériau de creuset contenant du nitrure de silicium et du dioxyde de silicium dans un rapport massique de 1:10 à 1:1 environ (Si3N4 : SiO2). L'invention concerne également un composant pour un corps de base d'un creuset pour fondre et cristalliser un métal, un matériau semi-conducteur ou un alliage métallique, une partie du composant étant au moins partiellement composée d'un matériau de creuset contenant du nitrure de silicium et du dioxyde de silicium dans un rapport massique de 1:10 à 1:1 environ (Si3N4 : SiO2), et un procédé de fabrication d'un composant pour un corps de base d'un creuset pour fondre et cristalliser un métal, un matériau semi-conducteur ou un alliage métallique, une partie du composant étant au moins partiellement composée d'un matériau de creuset contenant du nitrure de silicium et du dioxyde de silicium dans un rapport massique de 1:10 à 1:1 environ (Si3N4 : SiO2).
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009013706 | 2009-03-20 | ||
DE102009013706.8 | 2009-03-20 | ||
DE102009048741.7 | 2009-10-08 | ||
DE102009048741A DE102009048741A1 (de) | 2009-03-20 | 2009-10-08 | Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils |
Publications (4)
Publication Number | Publication Date |
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WO2010105617A2 WO2010105617A2 (fr) | 2010-09-23 |
WO2010105617A8 WO2010105617A8 (fr) | 2010-11-25 |
WO2010105617A3 true WO2010105617A3 (fr) | 2011-01-13 |
WO2010105617A4 WO2010105617A4 (fr) | 2011-03-10 |
Family
ID=42664191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2010/000338 WO2010105617A2 (fr) | 2009-03-20 | 2010-03-19 | Creuset pour fondre et cristalliser un métal, un semi-conducteur ou un alliage métallique, composant pour un corps de base d'un creuset et procédé de fabrication d'un creuset |
Country Status (2)
Country | Link |
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DE (1) | DE102009048741A1 (fr) |
WO (1) | WO2010105617A2 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5762945B2 (ja) * | 2011-12-30 | 2015-08-12 | 株式会社Sumco | シリカガラスルツボ |
DE102012101214B4 (de) * | 2012-02-15 | 2016-09-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wiederverwendbarer Tiegel aus einer Siliziumnitrid-Keramik, Verfahren zu dessen Herstellung, dessen Verwendung sowie Verfahren zur Herstellung eines mono- oder multikristallinen Halbmetall-Ingots oder Halbmetall-Körpers aus einer Schmelze |
CN103360077B (zh) * | 2012-04-01 | 2014-12-24 | 浙江昱辉阳光能源有限公司 | 一种氮化硅坩埚及其制备方法 |
FR3003272A1 (fr) * | 2013-03-14 | 2014-09-19 | Saint Gobain Ct Recherches | Creuset |
DE102013109024B4 (de) | 2013-08-21 | 2019-12-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wiederverwendbarer Tiegel aus einer Siliziumnitrid-Keramik, Verfahren zu dessen Herstellung, Verwendung des Tiegels, sowie Verfahren zur Herstellung eines mono- oder multikristallinen Silizium-Ingots und eines Silizium-Einkristalls aus einer Schmelze |
DE102014102980B4 (de) * | 2014-03-06 | 2017-12-21 | Ald Vacuum Technologies Gmbh | Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt |
CN107236987A (zh) * | 2017-07-12 | 2017-10-10 | 晶科能源有限公司 | 一种坩埚制备方法和多晶铸锭炉 |
DE102018006329B3 (de) | 2018-08-09 | 2019-03-21 | Faruk Savasci | Verfahren zur Herstellung von Schmelztiegeln durch Schichtenbildung mit thermischer Zerstörung der Tiegelpositive |
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WO2005026067A1 (fr) * | 2003-09-11 | 2005-03-24 | Wacker Chemie Ag | Procede de production d'un corps moule en sio2 recouvert de si3n4 |
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EP1739209A1 (fr) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Creuset pour la cristallisation du silicium |
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DE3639335A1 (de) | 1986-11-18 | 1988-05-26 | Bayer Ag | Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung |
EP0963464B1 (fr) | 1997-02-06 | 2001-07-18 | Deutsche Solar GmbH | Creuset muni de couches de protection en silicium, procede d'application la couche de protection en silicium et utilisation |
US6491971B2 (en) | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
NO317080B1 (no) | 2002-08-15 | 2004-08-02 | Crusin As | Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler |
WO2006002779A1 (fr) | 2004-06-30 | 2006-01-12 | Deutsche Solar Ag | Procede de production d'une coquille a revetement antiadhesif |
US20090249999A1 (en) | 2006-06-23 | 2009-10-08 | Rec Scanwafer As | Reusable crucibles and method of manufacturing them |
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- 2009-10-08 DE DE102009048741A patent/DE102009048741A1/de not_active Withdrawn
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DE4441911C1 (de) * | 1994-11-24 | 1996-02-08 | Wacker Chemie Gmbh | Verfahren zur Herstellung von gegenüber Metallschmelzen beständigen Formteilen und Verwendung der Formteile |
WO2005026067A1 (fr) * | 2003-09-11 | 2005-03-24 | Wacker Chemie Ag | Procede de production d'un corps moule en sio2 recouvert de si3n4 |
WO2005106084A1 (fr) * | 2004-04-29 | 2005-11-10 | Vesuvius Crucible Company | Creuset pour la cristallisation du silicium |
US20060219162A1 (en) * | 2005-04-01 | 2006-10-05 | G.T. Equipment Technologies, Inc. | Solidification of crystalline silicon from reusable crucible molds |
EP1739209A1 (fr) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Creuset pour la cristallisation du silicium |
Also Published As
Publication number | Publication date |
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WO2010105617A2 (fr) | 2010-09-23 |
WO2010105617A8 (fr) | 2010-11-25 |
WO2010105617A4 (fr) | 2011-03-10 |
DE102009048741A1 (de) | 2010-09-30 |
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