WO2010100711A1 - Diviseur d'onde électrique - Google Patents

Diviseur d'onde électrique Download PDF

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Publication number
WO2010100711A1
WO2010100711A1 PCT/JP2009/053857 JP2009053857W WO2010100711A1 WO 2010100711 A1 WO2010100711 A1 WO 2010100711A1 JP 2009053857 W JP2009053857 W JP 2009053857W WO 2010100711 A1 WO2010100711 A1 WO 2010100711A1
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WO
WIPO (PCT)
Prior art keywords
current
layer
magnetoresistive
magnetoresistive effect
spin torque
Prior art date
Application number
PCT/JP2009/053857
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English (en)
Japanese (ja)
Inventor
顕知 伊藤
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to PCT/JP2009/053857 priority Critical patent/WO2010100711A1/fr
Priority to JP2011502518A priority patent/JP5280516B2/ja
Publication of WO2010100711A1 publication Critical patent/WO2010100711A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Definitions

  • the spin torque diode can take out a DC voltage with high-frequency AC as an input, it can be used as a kind of receiver. However, since it is difficult to control the reception frequency with high accuracy, it is difficult to use the reception frequency as it is.
  • the present invention provides a receiver and a radio wave demultiplexer that can be industrially produced by applying the spin torque effect.
  • a radio wave demultiplexer includes a single bit line in which a direct current source and an antenna are connected in parallel, and a nonmagnetic layer comprising a fixed layer made of a ferromagnetic material and a free layer made of a ferromagnetic material.
  • a plurality of magnetoresistive elements connected to the bit lines, a plurality of source lines connected to the plurality of magnetoresistive elements, and a plurality of sources connected to the plurality of source lines, respectively.
  • FIG. 1 shows a circuit diagram of a radio wave demultiplexer applying spin torque according to the present invention.
  • 1 is a current driver
  • 2 is a memory for storing the magnitude of a current flowing through a digit line
  • 3 is a digit line through which a current for generating a magnetic field applied to the magnetoresistive effect element is passed
  • 4 is a direct current source
  • 5 is a direct current Inductance to be passed
  • 6 is a capacity for passing only alternating current
  • 7 is an antenna
  • 8 is a bit line
  • 9 is a magnetoresistive effect element
  • 10 is an amplifier
  • 11 is a mixer.
  • FIG. 2 is a diagram showing the portion of the magnetoresistive effect element in more detail.
  • a digit line 3 for generating a magnetic field 31 to be applied to the free layer 23 is formed immediately below the magnetoresistive effect element 9 in a direction perpendicular to the bit line.
  • a signal generated by the magnetoresistive effect element 9 is guided to the amplifier 10 manufactured in the peripheral portion of the receiving device body through the source line 33.
  • a radio signal to be received is first caught by an antenna 7 outside the receiver.
  • This radio signal is a signal in which information such as a video signal and an audio signal is superimposed at a lower frequency on a high frequency of a preset frequency f (frequency band is normally set to 1 to 30 GHz).
  • the direct current generated by the direct current source 4 is superimposed on the signal received by the antenna 7 via the capacitor 6 and the inductance 5 at the bias T 22 and guided to the bit line 8. This signal current is applied to all the magnetoresistive effect elements 9 from the bit line 8 to the channels 1 to n.
  • V j I i sin (2 ⁇ f i t) ⁇ ⁇ R ⁇ sin (2 ⁇ f i t + ⁇ )
  • f i the ferromagnetic resonance frequency of the free layer of the magnetoresistive effect element connected to the i-th channel
  • ⁇ is the phase difference between the input signal and the ferromagnetic resonance vibration
  • I i is generated by a DC power source.
  • the ferromagnetic resonance frequency f i of each channel by setting the frequency of the frequency f that carry signals such as video signals and audio signals, only the signal superimposed on a specific frequency demultiplexes the detection it can.
  • the frequency f i of the ferromagnetic resonance of each magnetoresistive element can be set as follows corresponding to the saturation magnetization Ms of the free layer and the magnetic field H i generated by the current flowing through the digit line.
  • ⁇ is a magnetic rotation ratio
  • ⁇ 0 is a vacuum permeability.
  • FIG. 4 shows an example of the relationship between the external magnetic field H i and the ferromagnetic resonance frequency f i . It can be seen that the resonance frequency can be changed from 3.2 GHz to 20 GHz by changing the magnetic field from 1 mT to 10 mT. Since the resonance line width of ferromagnetic resonance is usually about several tens of MHz, about ten resonance frequencies from resonance frequencies f 1 to f 10 can be dispersed between 3.2 GHz and 20 GHz as shown in FIG. It is. Thus, it is possible to demultiplex and detect about 10 different radio signals using this demultiplexer.
  • a method of matching this with a preset frequency f i is as follows. Before the duplexer is manufactured and shipped, a current superimposed with a sine wave having the set frequency f i is applied to the bit line 8. Next, the value of the current that maximizes the output from the i-th channel while flowing the current through the digit line 3 installed immediately below the i-th channel magnetoresistive effect element 9 and adjusting the magnitude of the current. Is recorded in the memory 2. This operation is performed for all the channels from the first channel to the tenth channel, and the information is recorded in the memory 2.
  • the recorded information is read from the memory 2 and transferred to the current driver 1, and a predetermined current value is applied to the digit line for each channel.
  • the free layer may be formed of a multilayer film of NiFe, CoFe, or NiFe / CoFe depending on the frequency to be set.
  • the fixed layer can also have a CoFe or CoFe / Ru / CoFe laminated ferrimagnetic structure.
  • the shape of the tunnel magnetoresistive element 9 is such that the direction parallel to the bit line 8 in FIG. 3 is long, the direction perpendicular thereto is shortened, and the easy axis is parallel to the bit line 8 in FIG.
  • the length ratio that is, the aspect ratio, is preferably about 1.5 to 2.5 as a ratio of long side / short side. This is to stabilize the motion of free layer magnetization due to ferromagnetic resonance excited by the spin torque effect.
  • planar shape of the magnetoresistive effect element is desirably an octagon or a hexagon in which four vertices of an ellipse or a rectangle are cut off as shown in FIG. Thereby, the motion of the free layer magnetization due to ferromagnetic resonance is further stabilized.
  • a tunnel magnetoresistive effect element made of CoFe (3 nm) / Ru (0.8 nm) / CoFeB (2.5 nm) / MgO (1 nm) / CoFeB (3 nm) which can obtain a particularly high tunnel magnetoresistance ratio.
  • the inside of () represents a film thickness.
  • the size of the tunnel magnetoresistive effect element was an ellipse of 80 ⁇ 160 nm.
  • the current I i per channel is 100 ⁇ A. It was. Therefore, the value of the current I energized by the DC power supply 4 is only 1 mA when demultiplexing for 10 channels.
  • the distance between the free layer 23 of the tunnel magnetoresistive element and the center of the digit line is about 300 nm.
  • the current value for generating a magnetic field of 1 mT is 750 ⁇ A
  • the current value for generating a magnetic field of 10 mT is 7.5 mA.
  • a current of about 750 ⁇ A is applied to the digit line immediately below channel 1
  • a current of 7.5 mA is applied to the digit line immediately below channel 10.
  • the resonance frequency of the tunnel magnetoresistive effect element 1 is 3.2 GHz
  • the resonance frequency of the tunnel magnetoresistive effect element of the channel 10 is 20 GHz.
  • the resonance frequencies of the other channels were set by adjusting the value of the current flowing through the digit line so that the interval between the resonance frequencies of adjacent resonance lines was 1.87 GHz.
  • the signal obtained from each channel was about 1 mV, which was amplified several tens of times by an amplifier, and various signals superimposed on the high frequency radio wave could be detected.
  • a ferromagnetic thin film such as NiFe
  • the current value necessary for generating the magnetic field can be further halved to further reduce power consumption. I can do it.
  • the size of the demultiplexer is extremely small as a few tens of ⁇ m ⁇ several tens of ⁇ m as a whole, and can be formed on a semiconductor substrate on which peripheral circuits such as amplifiers are formed by using a lithography process, thereby reducing manufacturing costs. There is an advantage that you can.
  • the film configuration is CoFe (3 nm) / Ru (0.8 nm) / CoFe (2.5 nm) / Cu (3 nm) / CoFe (1 nm) / NiFe (2 nm).
  • the inside of () represents a film thickness.
  • the size of the giant magnetoresistive element was an ellipse of 80 ⁇ 160 nm.
  • the spin torque magnetization reversal is performed with a pulse width of 1 ns from the plot of J c against ln (t).
  • the current density (threshold current density) and the thermal stability index ⁇ can be obtained.
  • the giant magnetoresistive element of this example had a threshold current density of 8 MA / cm 2 and a thermal stability city index of 60. Therefore, the threshold current value of the spin torque magnetization reversal is about 800 ⁇ A.
  • the current I i per channel is 400 ⁇ A. It was. Therefore, the value of the current I energized by the DC power supply 4 is only 4 mA when performing demultiplexing of 10 channels.
  • the resistance of the giant magnetoresistive element when the magnetization of the free layer and the fixed layer is orthogonal is about 50 ⁇ , and the resistance of the tunnel magnetoresistive element when the magnetization of the free layer and the fixed layer is parallel is 50 ⁇ , antiparallel
  • the resistance in this case is 55 ⁇ , and the so-called tunnel magnetoresistance ratio is 10%.
  • a current flowing through the digit line is changed as shown in FIG. 4 with respect to the magnetic field H i generated.
  • the cross sectional dimension of the digit line was a rectangle of 500 nm ⁇ 500 nm.
  • the distance from the free layer of the giant magnetoresistive element to the center of the digit line is about 300 nm.
  • the current value for generating a magnetic field of 1 mT is 750 ⁇ A, and the current value for generating a magnetic field of 10 mT is 7.5 mA.
  • a current of about 750 ⁇ A is passed through the digit line immediately below channel 1 and a current of 7.5 mA is passed through the digit line directly below channel 10.
  • the resonant frequency of the tunnel magnetoresistive element of channel 1 is 3.2 GHz
  • the resonant frequency of the tunnel magnetoresistive element of channel 10 is 20 GHz.
  • the resonance frequencies of the other channels were set by adjusting the value of the current flowing through the digit line so that the interval between the resonance frequencies of adjacent resonance lines was 1.87 GHz.
  • the signal obtained from each channel was about 1 nV, which was amplified several thousand times by an amplifier, and various signals superimposed on high-frequency radio waves could be detected.
  • a ferromagnetic thin film such as NiFe
  • the current value necessary for generating the magnetic field can be further halved to further reduce power consumption. I can do it.
  • the size of the demultiplexer is extremely small as a few tens of ⁇ m ⁇ several tens of ⁇ m as a whole, and can be formed on a semiconductor substrate on which peripheral circuits such as amplifiers are formed by using a lithography process, thereby reducing manufacturing costs. There is an advantage that you can.

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  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

L'invention porte sur un diviseur d'onde qui applique un effet de couple de spin et qui est compact et peut facilement régler une fréquence reçue. Un diviseur d'onde électrique comprend une ligne de bit (8), à laquelle une source de courant continu (4) et une antenne (7) sont connectées en parallèle, une pluralité de lignes de source connectées à des éléments à effet magnétorésistif (9) connectés à la ligne de bit, des amplificateurs (10) connectés aux lignes de source individuelles, un mélangeur (11) pour mélanger les sorties des amplificateurs individuels, des lignes de chiffre (3) pour appliquer des champs magnétiques aux couches libres des éléments à effet magnétorésistif, un circuit d'attaque en courant (1) agencé pour appliquer un courant électrique prédéterminé aux lignes de chiffre individuelles, et une mémoire (2) pour stocker à l'avance l'intensité des courants électriques qui doivent être appliqués aux lignes de chiffre individuelles. Les fréquences de résonance des éléments à effet magnétorésistif individuels sont ajustées par les champs magnétiques, qui sont appliqués par les lignes de chiffre aux couches libres des éléments à effet magnétorésistif.
PCT/JP2009/053857 2009-03-02 2009-03-02 Diviseur d'onde électrique WO2010100711A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2009/053857 WO2010100711A1 (fr) 2009-03-02 2009-03-02 Diviseur d'onde électrique
JP2011502518A JP5280516B2 (ja) 2009-03-02 2009-03-02 電波分波器

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Application Number Priority Date Filing Date Title
PCT/JP2009/053857 WO2010100711A1 (fr) 2009-03-02 2009-03-02 Diviseur d'onde électrique

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013038994A1 (fr) * 2011-09-16 2013-03-21 Tdk株式会社 Convertisseur de fréquence
WO2013108357A1 (fr) * 2012-01-17 2013-07-25 株式会社日立製作所 Élément de diode de couple de rotation, redresseur, et module de production d'énergie
JP2016143701A (ja) * 2015-01-30 2016-08-08 Tdk株式会社 磁気抵抗効果デバイス
JP2017028276A (ja) * 2015-07-21 2017-02-02 Tdk株式会社 マイクロ波受信装置および磁気抵抗効果デバイス
JP2017063397A (ja) * 2015-03-16 2017-03-30 Tdk株式会社 磁気抵抗効果デバイス
CN107104181A (zh) * 2016-02-23 2017-08-29 Tdk株式会社 磁阻效应器件
CN109390464A (zh) * 2017-08-07 2019-02-26 Tdk株式会社 磁阻效应器件以及高频器件
JP2019079876A (ja) * 2017-10-23 2019-05-23 株式会社デンソー 磁気抵抗素子および検波器
CN110447114A (zh) * 2017-03-23 2019-11-12 英特尔公司 自旋电子装置、双工器、收发器和电信装置
US11232894B2 (en) * 2016-10-11 2022-01-25 Thales Method for generating a plurality of currents each having a frequency

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JP2004158750A (ja) * 2002-11-08 2004-06-03 Hitachi Ltd 磁気抵抗効果素子、磁気記録素子およびこれらを利用した装置
WO2007032149A1 (fr) * 2005-09-16 2007-03-22 Kyushu University, National University Corporation Dispositif haute fréquence utilisant un point de film multicouche magnétique
JP2007189686A (ja) * 2006-01-12 2007-07-26 Samsung Electronics Co Ltd 共振素子、バンドパスフィルター及びデュプレクサ

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US6979998B2 (en) * 2003-04-16 2005-12-27 Hewlett-Packard Development Company, L.P. Magnetic filter

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2004158750A (ja) * 2002-11-08 2004-06-03 Hitachi Ltd 磁気抵抗効果素子、磁気記録素子およびこれらを利用した装置
WO2007032149A1 (fr) * 2005-09-16 2007-03-22 Kyushu University, National University Corporation Dispositif haute fréquence utilisant un point de film multicouche magnétique
JP2007189686A (ja) * 2006-01-12 2007-07-26 Samsung Electronics Co Ltd 共振素子、バンドパスフィルター及びデュプレクサ

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013038994A1 (fr) * 2011-09-16 2013-03-21 Tdk株式会社 Convertisseur de fréquence
JP2013065987A (ja) * 2011-09-16 2013-04-11 Tdk Corp 周波数変換装置
WO2013108357A1 (fr) * 2012-01-17 2013-07-25 株式会社日立製作所 Élément de diode de couple de rotation, redresseur, et module de production d'énergie
JP2016143701A (ja) * 2015-01-30 2016-08-08 Tdk株式会社 磁気抵抗効果デバイス
JP2017063397A (ja) * 2015-03-16 2017-03-30 Tdk株式会社 磁気抵抗効果デバイス
JP2017028276A (ja) * 2015-07-21 2017-02-02 Tdk株式会社 マイクロ波受信装置および磁気抵抗効果デバイス
CN107104181A (zh) * 2016-02-23 2017-08-29 Tdk株式会社 磁阻效应器件
CN107104181B (zh) * 2016-02-23 2020-01-03 Tdk株式会社 磁阻效应器件
US11232894B2 (en) * 2016-10-11 2022-01-25 Thales Method for generating a plurality of currents each having a frequency
CN110447114A (zh) * 2017-03-23 2019-11-12 英特尔公司 自旋电子装置、双工器、收发器和电信装置
EP3607593A4 (fr) * 2017-03-23 2020-10-21 INTEL Corporation Dispositifs spintroniques, duplexeurs, émetteurs-récepteurs et dispositifs de télécommunication
US11205749B2 (en) 2017-03-23 2021-12-21 Intel Corporation Spintronic devices, duplexers, transceivers and telecommunication devices
CN109390464A (zh) * 2017-08-07 2019-02-26 Tdk株式会社 磁阻效应器件以及高频器件
JP2019079876A (ja) * 2017-10-23 2019-05-23 株式会社デンソー 磁気抵抗素子および検波器

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JPWO2010100711A1 (ja) 2012-09-06

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