WO2010098624A3 - 요철부가 형성된 기판 및 이를 이용한 태양전지의 제조방법 - Google Patents

요철부가 형성된 기판 및 이를 이용한 태양전지의 제조방법 Download PDF

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Publication number
WO2010098624A3
WO2010098624A3 PCT/KR2010/001243 KR2010001243W WO2010098624A3 WO 2010098624 A3 WO2010098624 A3 WO 2010098624A3 KR 2010001243 W KR2010001243 W KR 2010001243W WO 2010098624 A3 WO2010098624 A3 WO 2010098624A3
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WO
WIPO (PCT)
Prior art keywords
substrate
uneven portion
solar cell
same
manufacturing solar
Prior art date
Application number
PCT/KR2010/001243
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English (en)
French (fr)
Other versions
WO2010098624A2 (ko
Inventor
이유진
김동제
박정남
이동진
성인모
Original Assignee
주식회사 티지솔라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090016525A external-priority patent/KR20100097537A/ko
Priority claimed from KR1020090016767A external-priority patent/KR101065744B1/ko
Priority claimed from KR20090027277A external-priority patent/KR100995708B1/ko
Application filed by 주식회사 티지솔라 filed Critical 주식회사 티지솔라
Publication of WO2010098624A2 publication Critical patent/WO2010098624A2/ko
Publication of WO2010098624A3 publication Critical patent/WO2010098624A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

요철부가 형성된 기판 및 이를 이용한 태양전지의 제조방법이 개시된다. 이러한 본 발명에 따른 요철부가 형성된 기판의 제조 방법은 기판(100)의 표면에 요철부(110)를 형성하는 텍스쳐링 단계; 및 요철부(110)가 형성된 기판(100)을 열처리 하는 열처리 단계를 포함하는 것을 특징으로 한다.
PCT/KR2010/001243 2009-02-26 2010-02-26 요철부가 형성된 기판 및 이를 이용한 태양전지의 제조방법 WO2010098624A2 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020090016525A KR20100097537A (ko) 2009-02-26 2009-02-26 요철 구조가 형성된 기판의 제조 방법
KR10-2009-0016525 2009-02-26
KR10-2009-0016767 2009-02-27
KR1020090016767A KR101065744B1 (ko) 2009-02-27 2009-02-27 요철구조가 형성된 기판을 이용한 태양전지의 제조방법
KR10-2009-0027277 2009-03-31
KR20090027277A KR100995708B1 (ko) 2009-03-31 2009-03-31 요철 구조가 형성된 기판의 제조 방법

Publications (2)

Publication Number Publication Date
WO2010098624A2 WO2010098624A2 (ko) 2010-09-02
WO2010098624A3 true WO2010098624A3 (ko) 2010-11-11

Family

ID=42666085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/001243 WO2010098624A2 (ko) 2009-02-26 2010-02-26 요철부가 형성된 기판 및 이를 이용한 태양전지의 제조방법

Country Status (2)

Country Link
TW (1) TW201041174A (ko)
WO (1) WO2010098624A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932078A (zh) * 2016-01-15 2016-09-07 北京创世捷能机器人有限公司 一种金刚线切割的多晶硅片的制绒方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425647B (zh) * 2010-11-26 2014-02-01 Big Sun Energy Technology Inc 具有平坦晶圓背面之太陽能電池之製造方法
TWI512807B (zh) * 2011-06-09 2015-12-11 Epistar Corp 半導體元件結構與其分離方法
CN111211184A (zh) * 2019-12-30 2020-05-29 浙江爱旭太阳能科技有限公司 一种利用微喷砂技术增强单晶硅电池前表面陷光效果的方法
CN112053936B (zh) * 2020-09-22 2024-06-11 粤芯半导体技术股份有限公司 晶圆背面粗糙化控制方法以及功率器件制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722632A (ja) * 1993-06-23 1995-01-24 Sharp Corp 多結晶シリコン太陽電池とその製造方法
KR19980080115A (ko) * 1997-03-11 1998-11-25 미따라이 후지오 광전 변환 소자 및 이를 사용한 건재
KR20010054917A (ko) * 1999-12-08 2001-07-02 이 창 세 에스오아이 웨이퍼의 표면 정밀 가공 방법
KR20050053454A (ko) * 2003-12-02 2005-06-08 주식회사 실트론 반도체 웨이퍼의 제조방법
JP2006128391A (ja) * 2004-10-28 2006-05-18 Sharp Corp 結晶質シリコン基板のその処理方法および光電変換素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722632A (ja) * 1993-06-23 1995-01-24 Sharp Corp 多結晶シリコン太陽電池とその製造方法
KR19980080115A (ko) * 1997-03-11 1998-11-25 미따라이 후지오 광전 변환 소자 및 이를 사용한 건재
KR20010054917A (ko) * 1999-12-08 2001-07-02 이 창 세 에스오아이 웨이퍼의 표면 정밀 가공 방법
KR20050053454A (ko) * 2003-12-02 2005-06-08 주식회사 실트론 반도체 웨이퍼의 제조방법
JP2006128391A (ja) * 2004-10-28 2006-05-18 Sharp Corp 結晶質シリコン基板のその処理方法および光電変換素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932078A (zh) * 2016-01-15 2016-09-07 北京创世捷能机器人有限公司 一种金刚线切割的多晶硅片的制绒方法

Also Published As

Publication number Publication date
TW201041174A (en) 2010-11-16
WO2010098624A2 (ko) 2010-09-02

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