WO2010081505A3 - Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat - Google Patents

Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat Download PDF

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Publication number
WO2010081505A3
WO2010081505A3 PCT/EP2009/008605 EP2009008605W WO2010081505A3 WO 2010081505 A3 WO2010081505 A3 WO 2010081505A3 EP 2009008605 W EP2009008605 W EP 2009008605W WO 2010081505 A3 WO2010081505 A3 WO 2010081505A3
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WO
WIPO (PCT)
Prior art keywords
silicon substrate
solar cell
producing
process steps
layer
Prior art date
Application number
PCT/EP2009/008605
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English (en)
French (fr)
Other versions
WO2010081505A2 (de
Inventor
Daniel Biro
Oliver Schultz-Wittmann
Anke Lemke
Jochen Rentsch
Florian Clement
Marc Hofmann
Andreas Wolf
Luca Gautero
Sebastian Mack
Ralf Preu
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to EP09771303A priority Critical patent/EP2377169A2/de
Priority to CN2009801545402A priority patent/CN102282683A/zh
Priority to US13/144,531 priority patent/US20110272020A1/en
Publication of WO2010081505A2 publication Critical patent/WO2010081505A2/de
Publication of WO2010081505A3 publication Critical patent/WO2010081505A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung einer Solarzelle aus einem Siliziumwafer, folgende Verfahrensschritte umfassend: A Texturierung einer Seite des Siliziumsubstrates (1) zur Verbesserung der Absorption oder Entfernen des Sägeschadens an einer Seite des Siliziumsubstrates (1), B Erzeugen eines Emitterbereiches (2) an einer Seite des Siliziumsubstrates (1) durch Eindiffundieren eines Dotierstoffes, zur Ausbildung eines pn-Überganges, C Entfernen einer Glasschicht, wobei die Glasschicht den Dotierstoff enthält, D Aufbringen einer Maskierungsschicht (3), wobei die Maskierungsschicht (3) eine dielektrische Schicht ist, E Abtragen eines Teil des Materials des Siliziumsubstrates (1), F Aufbringen von Metallisierungsstrukturen (5, 6), zur elektrischen Kontaktierung der Solarzelle. Wesentlich ist, dass zwischen den Verfahrensschritten E und F eine thermische Oxidation durchgeführt wird, zur Ausbildung einer Oxidschicht (4) und dass die Maskierungsschicht (3) und die Oxidschicht (4) in den nachfolgenden Prozessschritten auf dem Siliziumsubstrat (1) verbleiben.
PCT/EP2009/008605 2009-01-14 2009-12-03 Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat WO2010081505A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09771303A EP2377169A2 (de) 2009-01-14 2009-12-03 Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat
CN2009801545402A CN102282683A (zh) 2009-01-14 2009-12-03 太阳能电池和用于由硅基底制造太阳能电池的方法
US13/144,531 US20110272020A1 (en) 2009-01-14 2009-12-03 Solar cell and method for producing a solar cell from a silicon substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009005168A DE102009005168A1 (de) 2009-01-14 2009-01-14 Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
DE102009005168.6 2009-01-14

Publications (2)

Publication Number Publication Date
WO2010081505A2 WO2010081505A2 (de) 2010-07-22
WO2010081505A3 true WO2010081505A3 (de) 2011-04-14

Family

ID=42262905

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/008605 WO2010081505A2 (de) 2009-01-14 2009-12-03 Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat

Country Status (5)

Country Link
US (1) US20110272020A1 (de)
EP (1) EP2377169A2 (de)
CN (1) CN102282683A (de)
DE (1) DE102009005168A1 (de)
WO (1) WO2010081505A2 (de)

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DE102008038184A1 (de) * 2008-08-19 2010-02-25 Suss Microtec Test Systems Gmbh Verfahren und Vorrichtung zur temporären elektrischen Kontaktierung einer Solarzelle
US8084280B2 (en) 2009-10-05 2011-12-27 Akrion Systems, Llc Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology
US8115097B2 (en) * 2009-11-19 2012-02-14 International Business Machines Corporation Grid-line-free contact for a photovoltaic cell
NL2005261C2 (en) * 2010-08-24 2012-02-27 Solland Solar Cells B V Back contacted photovoltaic cell with an improved shunt resistance.
DE102011050136A1 (de) * 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
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DE102011010077A1 (de) * 2011-02-01 2012-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle sowie Verfahren zu deren Herstellung
NL2006161C2 (en) * 2011-02-08 2012-08-09 Tsc Solar B V Method of manufacturing a solar cell and solar cell thus obtained.
CN102800743B (zh) * 2011-05-27 2015-12-02 苏州阿特斯阳光电力科技有限公司 背接触晶体硅太阳能电池片制造方法
CN103620800A (zh) 2011-04-19 2014-03-05 弗劳恩霍弗实用研究促进协会 用于制造太阳能电池的方法
DE102011018374A1 (de) * 2011-04-20 2012-10-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer metallischen Kontaktstruktur einer Halbleiterstruktur mit Durchkontaktierung und photovoltaische Solarzelle
DE102011051511A1 (de) 2011-05-17 2012-11-22 Schott Solar Ag Rückkontaktsolarzelle und Verfahren zum Herstellen einer solchen
DE102011053085A1 (de) 2011-08-29 2013-02-28 Schott Solar Ag Verfahren zur Herstellung einer Solarzelle
WO2013062727A1 (en) * 2011-10-24 2013-05-02 Applied Materials, Inc. Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells
DE102011056495A1 (de) * 2011-12-15 2013-06-20 Rena Gmbh Verfahren zum einseitigen Glattätzen eines Siliziumsubstrats
CN102569345B (zh) * 2011-12-30 2016-04-20 昆山维信诺显示技术有限公司 Oled彩色显示屏及其制造方法
JP2013165160A (ja) * 2012-02-10 2013-08-22 Shin Etsu Chem Co Ltd 太陽電池の製造方法及び太陽電池
CN102569531B (zh) * 2012-02-28 2014-07-09 常州天合光能有限公司 一种多晶硅片的钝化处理方法
US9224906B2 (en) * 2012-03-20 2015-12-29 Tempress Ip B.V. Method for manufacturing a solar cell
CN102769059B (zh) * 2012-05-24 2015-08-05 友达光电股份有限公司 桥接太阳能电池及太阳能发电系统
US9093598B2 (en) * 2013-04-12 2015-07-28 Btu International, Inc. Method of in-line diffusion for solar cells
US9178088B2 (en) * 2013-09-13 2015-11-03 Tsmc Solar Ltd. Apparatus and methods for fabricating solar cells
CN103746039A (zh) * 2014-01-09 2014-04-23 东莞南玻光伏科技有限公司 晶体硅太阳能电池的背钝化方法及晶体硅太阳能电池的制备方法
WO2015118592A1 (ja) * 2014-02-06 2015-08-13 パナソニックＩｐマネジメント株式会社 太陽電池セルおよび太陽電池セルの製造方法
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Also Published As

Publication number Publication date
EP2377169A2 (de) 2011-10-19
DE102009005168A1 (de) 2010-07-22
US20110272020A1 (en) 2011-11-10
WO2010081505A2 (de) 2010-07-22
CN102282683A (zh) 2011-12-14

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