WO2010078715A1 - 一种大功率半导体激光器及其制备方法 - Google Patents
一种大功率半导体激光器及其制备方法 Download PDFInfo
- Publication number
- WO2010078715A1 WO2010078715A1 PCT/CN2009/001568 CN2009001568W WO2010078715A1 WO 2010078715 A1 WO2010078715 A1 WO 2010078715A1 CN 2009001568 W CN2009001568 W CN 2009001568W WO 2010078715 A1 WO2010078715 A1 WO 2010078715A1
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- WO
- WIPO (PCT)
- Prior art keywords
- insulating sheet
- negative electrode
- chip
- semiconductor laser
- power semiconductor
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Definitions
- the present invention relates to the field of laser manufacturing, and more particularly to a single emitter high power semiconductor laser and a method of fabricating the same. Background technique
- a semiconductor laser is also called a laser diode (LD).
- LD laser diode
- QW quantum wells
- SL-QW strained quantum wells
- MBE metal-organic chemical vapor deposition
- CBE complex metal-organic chemical vapor deposition
- the threshold current of the LD produced is significantly reduced, the conversion efficiency is greatly improved, the output power is multiplied, and the service life is also significantly lengthened.
- semiconductor lasers are more widely used in laser communication, optical storage, optical gyro, laser printing, ranging and radar, and the market demand is huge. The prospects are even broader.
- the package form of CT-mount will use copper-tungsten (CuW) alloy as the heat dissipation heat sink of single emitter cavity. Because the surface-plated CuW alloy is more expensive, the laser manufactured by it has higher cost. .
- CuW copper-tungsten
- the heat sink is usually located on the vertical side of the side where the single emitter is located. When the laser is working, it will generate nearly half of the heat. Because the chip is far away from the thermoelectric cooling part, the heat can not be exported in time, resulting in heat concentration, which causes the laser to broaden the wavelength and drift the wavelength, resulting in a decrease in the lifetime of the laser, and the reliability is not good.
- the object of the present invention is to overcome the defects of the prior single-emitter semiconductor laser and the preparation method thereof, and to provide a novel single-emitter high-power semiconductor laser and a preparation method thereof, and the technical problem to be solved is to make it not only It has high output power and safety, long life and high reliability, and is simple to manufacture, low in production cost, and mechanically stable than conventional lasers. It is very suitable for practical use.
- a high-power semiconductor laser includes a support block, an insulating sheet, a negative electrode metal piece, a positive electrode metal piece and a chip, wherein one side of the support block is provided with a step, and both ends of the support block are further provided a boss having a screw hole vertically formed on the boss, a positive surface of the chip being soldered to a middle portion of the upper surface of the insulating sheet, and a lower side of the insulating sheet being attached to the two bosses of the support block
- An inner negative electrode of the negative electrode metal piece and the positive electrode metal piece are respectively welded with a negative electrode insulating sheet and a positive electrode insulating sheet, and the negative electrode insulating sheet and the positive electrode insulating sheet are respectively welded on the step of the supporting block.
- a metal connecting piece is attached to the negative electrode of the chip, and one end of the metal connecting piece is further bonded to one end of the negative electrode metal piece, and the
- the insulating sheet has a gold plating layer on both upper and lower sides, and the gold plating layer has a thickness of 2 to 5 ⁇ m.
- the chip is a single-emitter cavity chip, an open-type bar or a plurality of single-emitter cavity chips in parallel.
- the conductive material is gold wire.
- the object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions.
- the method for preparing the high-power semiconductor laser according to the present invention specifically includes the following steps:
- the insulating sheet is cleaned with an organic solution and deionized water, and after drying, a gold layer is plated on the upper and lower sides of the insulating sheet, the gold plating layer has a thickness of 2-5 micrometers, and the insulating sheet after gold plating is used.
- the insulating sheet Store in an inert gas refusal;
- the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
- the positive electrode insulating sheet and the positive electrode insulating sheet are bonded to the support block by a conductive paste.
- the inert gas is nitrogen.
- the distance between the negative electrode metal piece and the positive electrode metal piece in step 5) is maintained at 0.5 to ⁇ to prevent short circuit.
- the soldering in the step 8) is reflow soldering.
- the conductive material in the step 9) is a gold wire.
- a high-power semiconductor laser and a preparation method thereof have at least the following advantages and beneficial effects: (1)
- the laser output power is high.
- the single-emitter cavity chip is directly mounted on the gold-plated thermal conductive insulating sheet, and the lower part of the insulating sheet is directly the heat-dissipating copper block, and the distance between the chip and the heat-dissipating part is closer, so the heat-dissipating capability is greatly enhanced, and the structure with the heat-dissipating capability is increased.
- the invention adopts a gold-plated insulating sheet instead of a gold-plated CuW heat sink, and the thermal conductivity of the two is equivalent, and the gold-plated CuW heat sink is more expensive than the gold-plated insulating sheet, and the same effect is achieved, and the gold-plated insulating sheet is greatly used in the invention. Reduced laser manufacturing costs
- the invention has two fixed screw holes, which can effectively improve the mechanical stability of the laser;
- the invention adopts a gold-plated insulating sheet instead of a gold-plated CuW heat sink. Since the insulating sheet has a good insulating effect, the heat-dissipating block of the laser is not charged, which greatly improves the safety of the laser;
- the high-power semiconductor laser of the invention adopts an insulating sheet on the heat sink material, and the structure is designed with double fastening screw holes, which can effectively extend the service life of the laser, improve the reliability and stability of the laser, and the laser of the invention
- the structure also has the advantage of being small in size.
- the present invention relates to a high power semiconductor laser including a support block, a positive electrode metal piece, a negative electrode metal piece, and a chip.
- the support block is provided with a step and both ends thereof. Each of them is provided with a boss, a screw hole is formed on the boss, the chip is welded with the insulating sheet, the insulating sheet is attached to the supporting block, and the positive electrode metal piece and the negative electrode metal piece are respectively welded with the positive electrode insulating piece and the negative electrode insulating piece, the positive electrode insulating piece and The negative insulating sheet is spliced on the step of the supporting block, the negative electrode of the chip is attached to the metal connecting piece, the metal connecting piece is bonded to the positive and negative metal pieces, and the gold wire is welded between the insulating piece and the positive metal piece.
- the invention combines C-mount and CT-mount, and has the advantages of heat conduction and insulation. And with hard soldering, the reliability of the laser is high.
- the coefficient of linear expansion of the insulating sheet and the chip is relatively matched, and the thickness of the insulating sheet is small, so that the volume of the laser is smaller.
- the present invention is mainly applied to a high power semiconductor laser having a power of more than 0.5 watt.
- the present invention has significant advances in technology and has significant positive effects, and is a novel, progressive, and practical new design.
- FIG. 1A and FIG. 1B are schematic diagrams showing a package form of a prior art C-mount and CT-mount.
- 1 is a schematic exploded view of various components of a high power semiconductor laser of the present invention.
- 3 is a schematic view showing the overall structure of a high power semiconductor laser of the present invention.
- Figure 4 is a ⁇ -1 curve diagram of a 808mn single-emitter semiconductor laser sample.
- Figure 5 is a schematic diagram of the LIV curve of a 808 nm single-emitter semiconductor laser sample.
- Figure 6 is a schematic diagram showing the results of the optical language test of a 808 nm single-emitter semiconductor laser.
- Figure 7 is a schematic diagram of the P-I curve of a 808 nm single-emissive cavity semiconductor laser sample under pulsed conditions.
- Figure 8 is a schematic view showing the shape of a gold-plated layer of the insulating sheet 3.
- Positive metal sheet 10 gold wire
- the high power semiconductor laser of the present invention comprises a support block 1, an insulating sheet 3, a negative electrode metal piece 4, a positive electrode metal piece 9, and a chip 5.
- the material of the support block 1 needs to have a high thermal conductivity, for example, copper or a diamond having a higher thermal conductivity, which is not specifically limited in the present invention;
- the material of the insulating sheet 3 may be aluminum nitride (A1N) or cerium oxide. (Be0), or a diamond material having a higher thermal conductivity;
- the material of the negative electrode metal piece 4 and the positive electrode metal piece 9 is preferably copper, because the thermal conductivity of copper is 4 ⁇ , and the heat dissipation is good.
- a step 12 is disposed on one side of the support block 1, and the step 12 is processed on one side of the entire support block 1.
- the support block 1 is further provided with a boss 11 at each end thereof, and the boss 11 in FIG. a rectangular structure and a screw hole 2 is vertically defined in each of the bosses 11, and the screw holes 2 are used for fixing the laser;
- the positive electrode surface of the chip 5 is soldered to the middle of one side of the insulating sheet 3 (will be opposite to the positive surface of the chip 5)
- the connecting surface is referred to as an upper side, and correspondingly, the other side corresponding to the upper side of the insulating sheet 3 is a lower side), wherein the light emitting cavity surface of the chip 5 is required to be flush with the long side of the insulating sheet 3 (ie, the light emitting cavity) The surface only needs to be close to the long side of one side.)
- the light emitting direction of the chip 5 is perpendicular to the long side of the insulating sheet 3 (wherein the
- the metal layer can be gold, copper or other metal materials with high conductivity.
- Upper and lower metal layer is made of the same metal material.
- the bottom surface of the insulating sheet 3 is entirely plated with gold, the upper ends of the insulating sheet 3 are plated with gold, and the specific shape of the gold-plated layer on the insulating sheet 3 is applied.
- the thickness of the gold plating layer was controlled to be 2 to 5 ⁇ m.
- the middle portion of the insulating sheet 3 is not gold-plated and is used for bonding the solder material to the chip 5.
- the insulating sheet 3 functions as an insulation to ensure the safety of the electrical connection.
- One end of the negative electrode metal piece 4 and the positive electrode metal piece 9 are respectively welded with a negative electrode insulating sheet 7 and a positive electrode insulating sheet 6, and the negative electrode insulating sheet 7 and the positive electrode insulating sheet 6 are respectively welded at both ends of the step 12 of the support block 1, and The 5-1 hidden distance is maintained between the negative electrode metal piece 4 and the positive electrode metal piece 9 with a certain distance between the negative electrode metal piece 4 and the positive electrode metal piece 9.
- the negative electrode of the chip 5 is attached with a metal connecting piece 8 (the material of the metal connecting piece 8 is preferably copper or other metal having high conductivity), and one end of the metal connecting piece 8 is also bonded to one end of the negative electrode metal piece 4.
- the insulating sheet 3 and the positive electrode metal piece 9 are pressed between the gold wire 10 (or other electrically conductive material).
- the chip 5 described above may be a single emitter cavity chip or a mini-bar, and the chip 5 may also be composed of a plurality of single emitter cavity chips in parallel. In order to ensure the mechanical connection reliability of the laser, it can be connected to the external fixing block through the two screw holes 2 on the support block 1 with fastening screws.
- the method of preparing the high power semiconductor laser of the present invention is specifically as follows.
- the quasi-support block 1 First, the quasi-support block 1, the insulating sheet 3, the positive electrode insulating sheet 6, the negative electrode insulating sheet 7, the positive electrode metal sheet 9, the negative electrode metal sheet 4, and the metal connecting sheet 8 (the material of the metal connecting sheet 8 is preferably copper or other conductive material) High metal)
- the insulating sheet 3 is cleaned with an organic solution and deionized water, and after drying, a gold layer is plated on the upper and lower sides of the insulating sheet 3, the thickness of the gold plating layer is 2-5 ⁇ m, and the gold-plated insulating sheet 3 is placed in a nitrogen gas (or Other inert gases) are rejected for storage;
- the positive electrode of the chip 5 is attached to the gold-plated insulating sheet 3 by solder, wherein one side of the light-emitting cavity surface of the chip 5 is flush with the long side surface of the insulating sheet 3, and the light-emitting direction of the chip 5 and the length of the insulating sheet 3 are long. Sideways vertical;
- solder is plated on one surface of the negative electrode insulating sheet 7, and one side of the positive electrode insulating sheet 6 is plated with solder, one side of the metal connecting piece 8 is plated with solder, and the side of the negative electrode metal piece 4 and the negative electrode insulating sheet 7 is soldered, and the positive electrode is bonded.
- the metal piece 9 and the solder-plated side of the positive electrode insulating sheet 6 are welded together;
- insulating sheet 3 the support block 1, the metal connecting piece 8 and the negative electrode metal piece 4 are joined together, and the process may be drought; 9) Finally, one end of the insulating sheet 3 and the positive electrode metal piece 9 is pressure-welded with a conductive material 10 (for example, gold wire), and they are joined together to form a high power semiconductor laser.
- a conductive material 10 for example, gold wire
- the PN junction semiconductor material of the chip 5 connected to the insulating sheet 3 is forward biased, the P region is connected to the positive electrode block, and the N region is connected to the negative electrode block.
- the electric field of the forward voltage is opposite to the self-built electric field of the PN junction. It weakens the hindrance of the self-built electric field to the electron diffusion movement in the crystal, so that the free electrons in the N region are continuously diffused through the PN junction to the P region under the action of the forward voltage, and there are a large number of conduction bands in the junction region. When electrons and holes in the valence band, they will recombine in the injection zone.
- a 808 nm single-chip high-power semiconductor laser is fabricated, that is, the wavelength of light emitted by the semiconductor laser is 808 nra, and the structure thereof is also shown in FIG. 3, and the laser The output optical power exceeds 10 W under continuous wave operation.
- the P-I curve of a 808 nm single-emitter semiconductor laser sample has a maximum output optical power of 15 W.
- the test results of the operation under the condition of 6 watts are shown in Fig. 5.
- the operating current of the laser is 7.38A
- the operating voltage is 1.91V
- the threshold current is 0. 65A
- the ramp effect is 0. 87W/A
- the typical electro-optical conversion efficiency is 41.35%
- the maximum electro-optical conversion The efficiency is 42.42%
- the series resistance is 40.16 milliohms.
- Figure 6 shows the spectral test results of a 808 nm single-emitter semiconductor laser with a peak wavelength of 804.24 nm, a center wavelength of 804.12 nm, a FWHM of 1.61 nm, and a FW90%E of 2.48 nm.
- the present invention adopts a composite package structure, combining the advantages of C-mount and CT-mount, and has the advantages of heat conduction and insulation. And with hard solder (AuSn) soldering, the laser is more reliable. 5 ⁇
- the insulating sheet and the chip for example, GaAs
- the linear expansion coefficient is relatively matched
- the thickness of the insulating sheet is generally small, such as less than 0.5 mm.
- the invention is mainly applied to high power semiconductor lasers with powers above 3 watts.
- the single-emitter high-power semiconductor laser prepared by the invention can be applied to communication, computer (mainly data storage and input/output equipment), film and television, aerospace, aviation, medical, entertainment, scientific research, crafts, night vision illumination, and entertainment display. And other industries.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/056,137 US8638827B2 (en) | 2009-01-09 | 2009-12-28 | High-power semiconductor laser and method for manufacturing the same |
JP2011544764A JP5547749B2 (ja) | 2009-01-09 | 2009-12-28 | 高出力半導体レーザおよびその製造方法 |
EP09837273.3A EP2378616B1 (en) | 2009-01-09 | 2009-12-28 | High-power semiconductor laser and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN200910020854.5 | 2009-01-09 | ||
CN2009100208545A CN101465516B (zh) | 2009-01-09 | 2009-01-09 | 一种大功率半导体激光器及其制备方法 |
Publications (1)
Publication Number | Publication Date |
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WO2010078715A1 true WO2010078715A1 (zh) | 2010-07-15 |
Family
ID=40805939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2009/001568 WO2010078715A1 (zh) | 2009-01-09 | 2009-12-28 | 一种大功率半导体激光器及其制备方法 |
Country Status (5)
Country | Link |
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US (1) | US8638827B2 (zh) |
EP (1) | EP2378616B1 (zh) |
JP (1) | JP5547749B2 (zh) |
CN (1) | CN101465516B (zh) |
WO (1) | WO2010078715A1 (zh) |
Families Citing this family (12)
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CN101465516B (zh) * | 2009-01-09 | 2010-12-01 | 西安炬光科技有限公司 | 一种大功率半导体激光器及其制备方法 |
CN101635432B (zh) * | 2009-08-31 | 2011-06-01 | 西安炬光科技有限公司 | 一种用于半导体激光器的液体制冷片及其制备方法 |
CN101841127B (zh) * | 2010-06-11 | 2012-05-09 | 西安炬光科技有限公司 | 一种可替换芯片的水平阵列大功率半导体激光器 |
CN102097744B (zh) * | 2011-01-14 | 2012-12-12 | 刘兴胜 | 一种高功率半导体激光器的封装方法 |
US8681829B2 (en) * | 2011-08-29 | 2014-03-25 | Intellectual Light, Inc. | Compression mount for semiconductor devices, and method |
CN103166103A (zh) * | 2013-03-18 | 2013-06-19 | 中国工程物理研究院应用电子学研究所 | 一种水电绝缘的半导体激光器线阵的封装方法 |
US20160072252A1 (en) | 2014-09-04 | 2016-03-10 | Canare Electric Co., Ltd. | Semiconductor Lasers |
JP6472683B2 (ja) * | 2015-03-09 | 2019-02-20 | 株式会社クリスタルシステム | 半導体レーザモジュール |
RU2582302C1 (ru) * | 2015-03-25 | 2016-04-20 | федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) | Полупроводниковый лазер на основе эпитаксиальной гетероструктуры |
CN104836112B (zh) * | 2015-04-17 | 2018-07-10 | 中国科学院苏州生物医学工程技术研究所 | 一种单管半导体激光器串联结构的绝缘散热装置 |
CN109560456B (zh) * | 2018-07-26 | 2021-04-23 | 长春理工大学 | 一种半导体激光器封装结构及其制备方法 |
CN112510480A (zh) * | 2020-11-02 | 2021-03-16 | 西安理工大学 | 一种具有复合结构的高效散热式高功率半导体激光器热沉 |
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EP2378616A4 (en) | 2014-07-02 |
EP2378616B1 (en) | 2016-03-23 |
CN101465516A (zh) | 2009-06-24 |
EP2378616A1 (en) | 2011-10-19 |
US20110128987A1 (en) | 2011-06-02 |
CN101465516B (zh) | 2010-12-01 |
US8638827B2 (en) | 2014-01-28 |
JP2012514860A (ja) | 2012-06-28 |
JP5547749B2 (ja) | 2014-07-16 |
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