WO2010067814A1 - Substrate and method for manufacturing substrate - Google Patents
Substrate and method for manufacturing substrate Download PDFInfo
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- WO2010067814A1 WO2010067814A1 PCT/JP2009/070587 JP2009070587W WO2010067814A1 WO 2010067814 A1 WO2010067814 A1 WO 2010067814A1 JP 2009070587 W JP2009070587 W JP 2009070587W WO 2010067814 A1 WO2010067814 A1 WO 2010067814A1
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- substrate
- reflection surface
- region
- main surface
- light
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Definitions
- the present invention relates to a substrate and a method for manufacturing the substrate, and more specifically to a substrate that can be recognized by a sensor even if it is transparent, and a method for manufacturing the substrate.
- a semiconductor element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
- MOSFET Metal Oxide Semiconductor Field Effect Transistor
- a semiconductor element is formed in the central region.
- the main surface refers to the surface having the largest area among the surfaces. Therefore, no semiconductor element is formed in a region within a certain distance from the outer periphery of the semiconductor substrate. This is because such a semiconductor element formed near the outer periphery of the main surface, that is, in the end region, may have reduced reliability such as electrical characteristics.
- an ID mark is formed in a region near the outer periphery of the main surface of the semiconductor substrate, that is, an end portion where no semiconductor element is formed.
- the ID mark is used for consistent production management when performing a process for manufacturing a semiconductor device in which a large number of semiconductor elements are formed on the main surface of the semiconductor substrate.
- numbers, characters, barcodes, etc. for identifying each semiconductor substrate may be arranged as ID marks at the end of the main surface of the semiconductor substrate.
- an ID mark for example, a mark in which a large number of dots (concave portions) are formed at the end of the main surface of a semiconductor substrate has been used.
- the semiconductor substrate is identified in the end region of the main surface of the semiconductor substrate.
- This is an arrangement of a set of dots for the purpose.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-200355
- the formed dots are polished and flattened by a chemical mechanical polishing process (CMP process) which is a subsequent process.
- CMP process chemical mechanical polishing process
- a semiconductor wafer in which a recess that does not come into contact with a polishing cloth for performing a CMP process is formed and dots are formed on the bottom surface of the recess. .
- the shape of the end portion of the main surface of the substrate has been processed so as to be an end surface having a certain inclination angle with respect to the main surface so as to suppress chipping.
- Bevel cut has been mainly used. Specifically, a surface that forms a predetermined angle with both main surfaces so as to intersect each of one main surface of the substrate and the other main surface of the substrate facing the one main surface, The end surface of the substrate is formed at the end of the substrate.
- FIG. 15 is a schematic view showing a state in which a round is applied to the end portion of the substrate.
- a substrate 20 shown in FIG. 15 has a special end processing of a curved surface called a round at the end of the main surface. That is, a curved surface (on the left side in FIG. 15) connecting one main surface (the upper surface in FIG. 15) of the substrate 20 and the other main surface (the lower surface in FIG. 15) located on the opposite side of the one main surface.
- An end portion which is a semicircular portion) is provided, and the curved surface is used as an end surface of the substrate.
- a red or infrared LED light emitting diode
- LD laser diode
- Si silicon
- Si which has been mainly used as a conventional semiconductor substrate, absorbs red light or infrared light, so that it is possible to easily detect a semiconductor substrate made of silicon using these lights. is there.
- a substrate 20 for example, a semiconductor substrate such as Si
- red light or infrared light with respect to the one main surface (upper surface in FIG. 15). Irradiate light.
- a photoelectric sensor 30 for recognizing the light beam 10 such as incident red light is installed in a region facing the main surface opposite to the one main surface of the substrate 20 (the lower surface in FIG. 15). Keep it. Then, when the substrate 20 does not exist, the light beam 10 irradiated from above one main surface of the substrate 20 enters the photoelectric sensor 30 as shown in FIG. At this time, it can be recognized that the substrate 20 does not exist when the photoelectric sensor 30 detects the light beam 10.
- the photoelectric sensor 30 can detect the presence of the substrate 20.
- a semiconductor element semiconductor device using a compound semiconductor such as silicon carbide (SiC) instead of Si has been attracting attention as a material for realizing a high-frequency power device and a heat and radiation resistant device.
- SiC silicon carbide
- a compound semiconductor such as SiC or GaN has a wider band gap (forbidden band width) and a higher dielectric breakdown electric field strength than Si, and a semiconductor device using the compound semiconductor is, for example, a semiconductor using Si. This is because it has superior switching characteristics and a higher withstand voltage than devices.
- substrates made of such compound semiconductors substrates made of SiC, GaN, or the like are transparent, so that light irradiated to the substrate is less likely to be reflected by the substrate, and most of the light passes through the substrate. . Therefore, if the substrate 20 in FIG. 15 is a transparent substrate as described above, even if the substrate 20 is irradiated with light rays 10 such as red light or infrared light as shown in FIG. Compared with the case where the light beam 10 is applied to the substrate made of the above, the ratio of the light beam 10 reflected by the substrate 20 is reduced (that is, the ratio of the light beam 10 transmitted through the substrate 20 is increased). For this reason, it becomes difficult for the photoelectric sensor 30 to recognize the presence of the substrate 20 due to the intensity change of the light beam 10.
- the semiconductor using the conventional Si substrate is used. It is conceivable to use the manufacturing apparatus used for manufacturing the apparatus.
- the conventional method for detecting the presence of the Si substrate as described above it is difficult to accurately detect the presence of the transparent substrate. For this reason, it is difficult to divert the manufacturing apparatus used for the production of the semiconductor device using the conventional Si substrate as it is to the manufacture of the semiconductor device using the transparent substrate.
- a detection method different from the conventional one is used to detect the presence of the transparent substrate, a significant modification of the manufacturing apparatus is required, resulting in problems such as an increase in the cost of the manufacturing apparatus. Become.
- the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a substrate that can be detected by the same technique as a conventional Si substrate even if it is transparent, and a method for manufacturing the substrate. Is to provide.
- the substrate according to the present invention is a transparent substrate, and is a substrate provided with a detection region which is formed on at least a part of the end portion of the substrate and has a light transmittance smaller than the light transmittance at the central portion of the substrate. .
- a transparent substrate refers to a substrate having a low absorption rate (high transmittance) of light having a predetermined wavelength (for example, visible light (red light) or infrared light), for example, having a predetermined wavelength.
- a substrate transparent to visible light is a region facing one main surface of the substrate and a region facing the other main surface located on the opposite side of the one main surface of the substrate. Means a substrate that can be visually observed through the substrate.
- a part of the main surface of the substrate (here, the end portion) is used as a detection region, and the other main surface located on the opposite side of the main surface from the region facing the one main surface of the substrate in the detection region.
- the ratio (transmittance) at which light is transmitted to the region facing the substrate is made smaller than the similar transmittance in the region other than the detection region (here, the central portion) on the main surface of the substrate.
- the conventional Si substrate detection apparatus can be used for the detection of the substrate. Therefore, the manufacturing apparatus used in the manufacturing process of the semiconductor device using the conventional Si substrate can be used for the manufacturing process of the semiconductor device using the transparent substrate described above.
- the semiconductor element or the like is usually not formed at the end of the substrate, the number of elements obtained from the substrate is reduced even if the detection region as described above is formed at the end of the substrate (elements of the element). There is little possibility that production efficiency will decrease.
- the detection region described above preferably includes a total reflection surface that totally reflects light incident on the detection region. If the light incident on the detection region is totally reflected, almost all the light incident on the detection region is reflected on the surface of the detection region where the light is incident. For this reason, the light incident on the detection region enters the inside of the substrate from the detection region, and hardly transmits to the outside of the substrate from the back surface (the main surface opposite to the side on which the light is incident). As described above, since light traveling in the direction intersecting the main surface of the substrate is blocked in the substrate, the sensor that senses transmission of light can recognize (detect) the presence of the substrate.
- the detection region described above may include an irregular reflection surface that irregularly reflects light incident on the detection region. If the light incident on the detection region is diffusely reflected, most of the light incident on the detection region is reflected on the surface of the detection region where the light is incident. For this reason, as in the case of including the total reflection surface described above, most of the light incident on the detection region is reflected by the presence of the substrate, so that the photoelectric sensor recognizes (detects) the presence of the substrate. Can do.
- the substrate according to the present invention preferably contains at least one selected from the group consisting of SiC, GaN (gallium nitride), sapphire, AlN (aluminum nitride), and diamond. Since these are transparent substrates, when a semiconductor device is formed using these substrates, the presence of the substrate is detected by a sensor by providing a detection region with reduced light transmittance as described above. It can be easily detected.
- the step of preparing a transparent substrate and the light transmittance in at least a part of the end portion of the substrate are made smaller than the light transmittance in the central portion of the substrate.
- a process of performing processing As described above, in a transparent substrate, light such as visible light (for example, red light) or infrared light that is incident on one main surface usually passes through the inside of the substrate. The light is emitted from the main surface (back surface) opposite to the main surface. For this reason, it is difficult to detect the presence of a transparent substrate using a sensor such as a photoelectric sensor.
- a process of forming a region (detection region) in which the transmittance of incident light is reduced is provided on a part of the substrate.
- reducing the transmittance of light incident on a part of a substrate means that the transmittance of light in the region of the substrate is other than the region of the substrate (that is, the transmittance is reduced).
- the processing is performed so that the light transmittance is 10% or less (in the region not processed to be reduced).
- the senor can recognize that the amount of light passing through the inside of the substrate and transmitting to the outside of the substrate is reduced through the detection region. Therefore, the sensor can detect the presence of a transparent substrate.
- the step of performing the above-described processing includes a step of forming a total reflection surface that totally reflects light incident on at least a part of the end portion.
- the sensor can detect the presence of the substrate from the change in light transmittance in the detection region. If the substrate manufacturing method including the step of forming the total reflection surface as described above is used, a transparent substrate that can easily detect the presence of the substrate (by detecting a change in light transmittance) is formed by a sensor. be able to.
- the process of forming the total reflection surface described above includes a process of machining at least a part of the end.
- the step of forming the total reflection surface described above may include a step of laser processing at least a part of the end portion. If these processing methods are used, an arbitrary region on the surface of the substrate can be easily processed into an arbitrary shape (so as to be the total reflection surface). Therefore, by using these processing methods, it is possible to easily form a total reflection surface, so that detection of reducing the ratio (transmittance) of light incident from one main surface of the substrate to the outside of the substrate is reduced. The region can be easily formed.
- the step of performing the above-described processing may include a step of forming an irregular reflection surface that irregularly reflects light incident on at least a part of the end portion. Similarly to the total reflection surface, the irregular reflection surface reflects light incident on a part of the end portion (detection region) of the substrate by the irregular reflection surface of the substrate, so that the light passes through the substrate and is on the back side. Permeation to the For this reason, even when the irregular reflection surface is formed, the presence of the substrate can be easily detected by the sensor as in the case where the total reflection surface is formed.
- the step of forming the irregular reflection surface described above also includes a step of machining at least a part of the end portion as in the step of forming the total reflection surface described above.
- the step of forming the irregular reflection surface described above may include a step of laser processing at least a part of the end portion. If these processing methods are used, an arbitrary region on the surface of the substrate can be easily processed into an arbitrary shape that becomes a diffusely reflecting surface. Therefore, the irregular reflection surface can be easily formed by using these processing methods. For this reason, it is possible to easily form a detection region that reduces the transmittance of light incident from the main surface of the substrate.
- the step of forming the irregular reflection surface includes a step of introducing an impurity into at least a part of the end portion, and a step of increasing the surface roughness of the surface of the region into which the impurity is introduced. And may be included.
- the step of increasing the surface roughness of the surface may include a step of etching the surface layer in the region where the impurity is introduced, or a step of heat treating the surface layer in the region where the impurity is introduced. By performing etching or heat treatment, an uneven portion can be formed on the surface of the region where the impurity is introduced, and the surface roughness can be increased.
- the region can be a diffuse reflection surface. For this reason, the irregular reflection surface which should become a detection area
- the step of forming the irregular reflection surface includes a step of forming a thin film on at least a part of the end portion. That is, by increasing the surface roughness of a predetermined region of the main surface of the substrate as described above, a thin film that can be used as the irregular reflection surface is formed on the main surface of the substrate instead of making the region an irregular reflection surface. Also good. An irregular reflection surface made of a thin film formed in this way can also exhibit the same effects as the irregular reflection surface formed by increasing the surface roughness.
- the step of forming the total reflection surface may include a step of forming a thin film on at least a part of the end portion. As the thin film, any thin film whose surface is a total reflection surface can be used. In this case as well, the same effect as when the total reflection surface is formed by machining or the like can be obtained.
- the present invention it is possible to provide a substrate that can be recognized by a sensor even if it is transparent, and a method for manufacturing the substrate.
- a substrate 1 according to Embodiment 1 of the present invention has a predetermined thickness (vertical direction in FIG. 1), and is a transparent material used for a semiconductor device such as a high frequency power device or a heat / radiation resistant device. It is a substrate.
- the substrate 1 is depicted in a trapezoidal shape, but in actuality, a flat plate having a thickness (vertical direction in FIG. 1) of, for example, about 1 mm and a diameter (horizontal direction of FIG. It has a shape.
- a double wavy line is used to indicate that the width in the left-right direction is omitted.
- the substrate 1 in FIG. 1 is a transparent substrate as described above.
- the substrate 1 is made of a material containing at least one selected from the group consisting of SiC, GaN, sapphire, AlN, diamond, for example. Is preferred.
- the substrate 1 made of these materials can be used as a substrate for a semiconductor element (semiconductor device) such as a power device using a compound semiconductor.
- a light beam 10 (light) transmitted from the upper main surface side of the substrate 1 to the lower main surface (back surface) side in a direction intersecting (substantially perpendicular) the main surface. 1 passes through the inside of the substrate 1 at a high rate in the central portion (the central portion in the left-right direction in FIG. 1), and exits from the lower main surface to the outside of the substrate 1.
- the light beam 10 may be visible light such as red light, or may be non-visible light such as infrared light.
- the substrate 1 is preferably transparent to light having a wavelength of 200 nm to 800 nm.
- the substrate 1 is particularly preferably transparent to light having a wavelength of 300 nm to 700 nm. If light having the above-described wavelength is used as the light beam 10, it can be operated as a highly accurate sensor.
- the light beam 10 incident on the edge of the substrate 1 has the same wavelength and the same intensity as the light beam 10 incident on the central portion of the substrate 1.
- the light beam 10 incident on the central portion of 1 is not transmitted through the substrate 1, but is totally reflected by the total reflection surface 2 of the detection region existing at least at a part of the end portion of the substrate 1.
- the detection region is a region having a transmittance of the light beam 10 that is smaller than the transmittance of the light beam 10 in the central portion of the substrate 1.
- the entire region in the left-right direction (outer peripheral edge of the substrate 2) in FIG. 1 where the total reflection surface 2 is formed is referred to as a detection region.
- the detection region not only the total reflection surface 2 but also the outer peripheral end portion on the back surface side of the substrate 1 facing the photoelectric sensor 30 in FIG.
- the detection region is formed by providing a total reflection surface 2 having a predetermined angle with respect to the main surface of the substrate 1. That is, the total reflection surface 2 totally reflects the light beam 10 in the detection region, and thus the ratio (transmittance) of the light beam 10 irradiated to the detection region through the substrate 1 is set to the light beam 10 in the region other than the detection region. Exerts the function of making the ratio smaller than the ratio of transmitting through the substrate 1. Therefore, for example, as shown in FIG. 1, when the light beam 10 is incident on the substrate 1 from a direction intersecting (perpendicular) to the main surface of the substrate 1, the light beam 10 incident on the total reflection surface 2 is totally reflected.
- the total reflection surface 2 is an inclined surface having a predetermined angle ⁇ with respect to the main surface of the substrate 1 (left and right direction in FIG. 1) so that the angle can cause total reflection at the surface 2. Further, it is preferable that the surface of the total reflection surface 2 has such a small surface roughness that the light beam 10 incident on the total reflection surface 2 can be totally reflected without causing irregular reflection. In this way, the light beam 10 incident on the total reflection surface 2 is totally reflected as shown in FIG.
- the photoelectric sensor 30 can recognize that the light beam 10 is blocked by the presence of the substrate 1 disposed on the photoelectric sensor 30. As a result, the presence of the substrate 1 can be detected by a change in the amount of light detected by the photoelectric sensor 30.
- the photoelectric sensor 30 can recognize (detect) the presence of the substrate 1 even when the substrate 1 is made of a material that transmits the light beam 10.
- FIG. 2 is an enlarged cross-sectional view of the left total reflection surface 2 in the substrate 1 of FIG. Accordingly, since the region on the right side of the substrate 1 in FIG. 1 is omitted in FIG. 2, a wavy line is provided on the right side in FIG.
- the total reflection surface 2 of the substrate 1 shown in FIG. 2 forms an angle ⁇ with the main surface of the substrate 1 (surface extending in the left-right direction in FIG. 1) as shown in FIG.
- the angle ⁇ is an angle at which the light beam 10 incident on the substrate 1 from a direction perpendicular to the main surface of the substrate 1 can be totally reflected by the total reflection surface 2 as described above.
- positioned is the distance (distance from the left end in FIG. 2 to the right side) of the main surface direction from the outer periphery end (left end in FIG. 2) of the board
- the total reflection surface 2 and the lower main surface in FIG. May be small (a sharp angle).
- the substrate 1 will be chipped or cleaved starting from the outer peripheral end (the end portion of the substrate 1 having a sharp angle).
- the angle with respect to the main surface is larger than the total reflection surface 2. It is preferable to provide an end face. Further, the shape of the end surface from the outer peripheral end to the point A may be a plane as shown in FIG.
- the surface shape of the end surface may be a curved surface.
- a configuration in which the end surface from the outer peripheral end to the point A shown in FIG. 2 described above is not provided (a configuration in which the outer peripheral side from the point B is the total reflection surface 2) is possible.
- the region of 5 mm or more from the outer peripheral edge of the substrate 1 corresponds to the central portion of the main surface of the substrate 1 and is a region where a semiconductor element or the like is formed. Therefore, if the total reflection surface 2 is provided in a region of 5 mm or more from the end surface of the substrate 1, the region for forming a semiconductor element or the like on the main surface of the substrate 1 is reduced, so that the productivity of the semiconductor device is lowered. . For this reason, it is preferable to set the distance L2 to be 5 mm or less.
- the total reflection surface 2 only needs to be formed on at least a part of the end portion of the main surface of the substrate 1. That is, the total reflection surface 2 may be formed so as to make one round of the outer peripheral portion of the main surface of the substrate 1 in the entire region whose distance from the end surface of the main surface of the substrate 1 is, for example, 0.1 mm or more and 5 mm or less. And you may form the total reflection surface 2 only in a part in the circumferential direction of the said outer peripheral part.
- a method for manufacturing a substrate according to Embodiment 1 of the present invention will be described.
- a step of preparing the substrate (S10) is performed. Specifically, this is achieved by using a light beam 10 (see FIG. 1) irradiated for detecting a substrate in an apparatus such as a semiconductor device manufacturing apparatus (for example, a film forming apparatus or an etching apparatus).
- a transparent substrate to be a base for forming a transparent substrate 1 (see FIG. 1) that can be recognized.
- the substrate prepared here is a semiconductor substrate for forming a semiconductor device such as a power device by forming a semiconductor element on one main surface of the substrate, for example, visible light (red light) or infrared light.
- a transparent semiconductor substrate that transmits 10% or more of the light beam 10 is preferable.
- the substrate is made of a material including at least one selected from the group consisting of SiC, GaN, sapphire, AlN, and diamond, for example.
- the above-described substrate having a predetermined thickness and a predetermined main surface size may be purchased from the outside.
- the Czochralski method or boat Forming an ingot made of a crystal constituting the semiconductor substrate using a method, a solution growth method, etc., and cutting the ingot into a shape as a substrate having a predetermined thickness and a predetermined main surface size using, for example, a wire saw By doing so, a substrate may be prepared.
- a processing step (S20) is performed. Specifically, in order to make the light transmittance in at least a partial region of the end portion of the substrate prepared in the step (S10) of preparing the substrate function as a detection region, the central portion of the main surface of the substrate This is a step of performing processing for making the transmittance of the region smaller than the transmittance of the light in.
- the light transmittance in the region of the substrate is a region other than the region of the substrate (that is, the region not subjected to processing for reducing the transmittance).
- the processing is performed so as to be smaller than the light transmittance.
- the processing means that the light transmittance in the region is 10% or less of the light transmittance in other regions.
- this processing step (S20) in order to make the light transmittance in at least a part of the end portion of the main surface of the substrate smaller than the light transmittance in the central portion of the main surface of the substrate, A step of forming a total reflection surface that totally reflects light incident on at least a part of the portion is performed.
- predetermined conditions satisfying conditions that can cause total reflection when irradiated with a light beam 10 traveling in a direction intersecting the main surface of substrate 1 (left-right direction in FIG. 1) for example, a vertical direction.
- a total reflection surface 2 having an angle ⁇ is formed. As shown in FIG.
- the total reflection surface 2 may be formed so that almost the entire end face of the outer peripheral portion of the substrate 1 becomes the total reflection surface 2.
- the total reflection surface 2 and the conventional bevel cut surface 4 used conventionally may coexist in the detection region. That is, the angle formed by the total reflection surface 2 on the side on which the light beam 10 is incident (upper side in FIG. 4) and the main surface of the substrate 3 (left-right direction in FIG. 4) is an angle that satisfies the condition for total reflection of the light beam 10.
- a normal structure, for example, a bevel cut surface 4 for suppressing chipping or cleavage of the substrate 3 may be formed on the side opposite to the side on which the light beam 10 is incident (the lower side in FIG. 4).
- the bevel cut surface 4 has a main surface on the side where the total reflection surface 2 of the substrate 3 is formed so that the angle of the corner of the connection portion with the total reflection surface 4 is an acute angle as shown in FIG.
- the substrate 3 is formed so as to be inclined in the opposite direction to the total reflection surface 2 so that the width of the substrate 3 becomes smaller toward the opposite main surface (back surface).
- the total reflection surface 2 is formed to have an angle satisfying the same conditions as the total reflection surface 2 of the substrate 5 described above, and opposite to the side on which the light beam 10 is incident.
- an end surface 6 and a normal bevel cut surface 7 that are substantially perpendicular to the main surface (left-right direction in FIG. 5) of the substrate 5 may be formed. That is, from a different point of view, the outer peripheral edge of the substrate 5 has a configuration in which the total reflection surface 2 and the bevel cut surface 7 are arranged with the end surface 6 being substantially perpendicular to the main surface. Also good.
- the bevel cut surfaces 4 and 7 and the end surface 6 are provided below the total reflection surface 2 (opposite the side on which the light beam 10 is incident).
- a round (surface having a curved surface) formed at the end of the substrate in FIG. 15 (left side in FIG. 15) may be formed so as to be continuous with the total reflection surface 2.
- an arbitrary shape for suppressing cleavage and chipping of the substrate due to stress for example, can be provided under the total reflection surface 2 of each substrate.
- the step of forming total reflection surface 2 of each substrate according to the first embodiment of the present invention described above may include, for example, a step of machining at least a part of the end portion. May include a step of laser processing at least a part thereof. For example, using a grinding wheel, a predetermined region at the end of the main surface of the substrate 1 is removed so as to satisfy an angle that satisfies the condition for total reflection of the light beam 10 irradiated from a direction substantially perpendicular to the main surface. By doing so, the total reflection surface 2 can be formed. Alternatively, the total reflection surface 2 may be formed by removing the end portion of the substrate 1 in the same manner using a laser.
- the surface roughness of the total reflection surface 2 to be formed is reduced to such an extent that the irradiated light beam 10 can be totally reflected.
- the surface roughness is preferably processed so that Ra is 0.5 nm or less, and more preferably Ra is 0.1 nm or less.
- the particle size of the grindstone used in the finishing process is 100 nm or less.
- a substrate 8 according to the second embodiment of the present invention shown in FIG. 6 has basically the same mode as the substrate 1 according to the first embodiment of the present invention shown in FIG.
- the substrate 8 shown in FIG. 6 includes an irregular reflection surface 9 for irregularly reflecting the incident light beam 10 in the detection region, instead of the total reflection surface 2 shown in FIG. In this respect, the substrate 8 and the substrate 1 are different.
- a light beam 10 irradiated from a region (upper side in FIG. 6) facing one main surface of the substrate 8 is transmitted to the other main surface (lower side in FIG. 6) located on the opposite side of the one main surface of the substrate 8. If this can be suppressed, the photoelectric sensor 30 positioned below the substrate 8 can recognize that the light beam 10 has been blocked by the substrate 8, and therefore the presence of the substrate 8 can be detected. Therefore, in order to suppress the transmission of the light beam 10 through the substrate 8, the incident light beam 10 may be totally reflected as in the substrate 1 shown in FIG. 1, but the diffuse reflection surface 9 as in the substrate 8 shown in FIG. The effect similar to the case where the light beam 10 is diffusely reflected can be obtained.
- FIG. 7 is an enlarged cross-sectional view of the left irregular reflection surface 9 in the substrate 8 of FIG. Therefore, the region on the right side of the substrate 8 in FIG. 6 is not shown in FIG. Therefore, a wavy line is shown on the right side of FIG. 7, suggesting that the substrate 8 extends to the right side.
- the irregular reflection surface 9 shown in FIG. 7 has a configuration in which processing for increasing the surface roughness is performed on the total reflection surface 2 shown in FIG. That is, similarly to FIG. 2, as shown in FIG. 7, the irregular reflection surface 9 of the substrate 8 forms an angle ⁇ with the main surface of the substrate 8 (surface extending in the left-right direction in FIG. 7).
- to increase the surface roughness means to process the surface so as to have a surface roughness that can diffusely reflect the light beam 10 incident on the surface (to form an uneven shape). More specifically, it means that the surface is processed so that the surface roughness Ra is 0.1 ⁇ m or more.
- the detection region which is a region subjected to processing for increasing the surface roughness in order to exhibit the function as the irregular reflection surface 9, is from the outer peripheral end (left end in FIG. 7) of the substrate 8. It is preferable that the distance in the main surface direction (from the left end to the right side in FIG. 7) is 0.1 mm to 5 mm. That is, if the irregular reflection surface 9 is from point C to point D in FIG. 7, the distance L3 in the main surface direction from the outer peripheral edge of the substrate 8 to the point C is 0.1 mm or more, and the point D from the outer peripheral edge of the substrate 8.
- the distance L4 in the main surface direction is preferably 5 mm or less.
- the irregular reflection surface 9 may be formed on at least a part of the end portion of the main surface of the substrate 8. That is, the irregular reflection surface 9 may be formed so as to make one round of the outer peripheral portion of the main surface of the substrate 8 in the entire region whose distance from the end surface of the main surface of the substrate 8 is, for example, 0.1 mm or more and 5 mm or less. Alternatively, the irregular reflection surface 9 may be formed only on a part of the outer peripheral portion in the circumferential direction.
- the example which forms the irregular reflection surface 9 by raising the surface roughness of the total reflection surface 2 as shown in FIG. 7 is an example.
- a diffuse reflection surface having a large surface roughness at the end of the main surface of the substrate 8 without once forming a total reflection surface (that is, without forming an inclined portion or the like at the end of the substrate 8). 9 may be formed.
- a surface intersecting with one main surface (the upper main surface in FIGS. 6 and 7) and the other main surface (the lower main surface in FIGS. 6 and 7) of the substrate 8 is formed. Even in the case of formation, the angle formed between the intersecting surface and the main surface of the substrate 8 does not need to be an angle that satisfies the condition for causing the light ray 10 to undergo total reflection, such as an angle ⁇ shown in FIG.
- the substrate according to the second embodiment of the present invention like the substrate 3 shown in FIG. 4 as described above, for example, as in the substrate 11 shown in FIG. 4 may coexist. Or, for example, like the substrate 12 shown in FIG. 9, similarly to the substrate 5 in FIG. 5 described above, a structure in which the irregular reflection surface 9, the end surface 6, and the bevel cut surface 7 coexist may be used.
- an arbitrary shape for suppressing cleavage and chipping of the substrate due to stress for example, can be provided below the irregular reflection surface 9 of each substrate.
- substrate which concerns on Embodiment 2 of this invention is demonstrated.
- a transparent substrate to be used as the substrate of the semiconductor device is prepared.
- processing is performed to make the light transmittance in at least a partial region of the end portion of the substrate smaller than the light transmittance in the central portion of the main surface of the substrate.
- the processing step (S20) for example, as in the substrate 8 shown in FIG. 6, in the processing step (S20), light incident on at least a part of the end portion of the main surface of the substrate 8 is irregularly reflected. A step of forming the irregular reflection surface 9 is included.
- the main surface (the upper main surface in FIG. 7) and the other main surface (the lower side in FIG. 7) of the substrate 8 are formed in order to form the irregular reflection surface 9.
- a surface intersecting with the main surface) may be formed, and processing for increasing the surface roughness of the formed surface may be performed.
- the angle formed by the intersecting surface with the main surface of the substrate 8 may be, for example, an angle ⁇ (see FIG. 1) that satisfies the condition that the light ray 10 incident from a direction perpendicular to the main surface is totally reflected. Any other angle can be used.
- the irregular reflection surface 9 having a large surface roughness may be formed at the end of the main surface of the substrate 8 without forming the above-described intersecting surfaces.
- the region having a large surface roughness for exhibiting the function as the irregular reflection surface 9 is formed in a region from 0.1 mm to 5 mm from the end surface of the main surface of the substrate 8.
- a step of machining at least a portion of the end portion may be included, and a step of laser machining at least a portion of the end portion may be included.
- a shape for forming the irregular reflection surface 9 as shown in the substrate 8 is processed using a grindstone, And the method of giving the process which enlarges surface roughness is used.
- processing for increasing the surface roughness is performed by irradiating a predetermined region with laser. Specifically, it is preferable to irradiate a UV laser having a wavelength of 266 nm.
- the irregular reflection surface 9 for example, a method described below can be used. As shown in FIG. 10, in the method, as the step of introducing impurities (S21), the introduction of impurities into the region of the substrate where the irregular reflection surface is formed, that is, at least a portion of the edge of the substrate is introduced. The process to perform is implemented.
- the region of the substrate 8 where the irregular reflection surface is to be formed that is, the region of 0.1 mm or more and 5 mm or less from the end of the main surface of the substrate 8 (for example, the left end in the substrate 8 of FIG. 11) Ions are implanted from the surface into the substrate 8 to form crystal defects 13 constituting the substrate 8.
- Ions are implanted from the surface into the substrate 8 to form crystal defects 13 constituting the substrate 8.
- B boron
- N nitrogen
- Al aluminum
- P phosphorus
- the density (concentration) of impurities to be introduced is preferably 1.0E17 cm ⁇ 3 or more and 1.0E21 cm ⁇ 3 or less, and 1.0E19 cm ⁇ 3 or more and 1. More preferably, it is 0E20 cm ⁇ 3 or less.
- the density (concentration) is in the above range, the effect of irregularly reflecting the light beam 10 incident on the region can be increased.
- an etching step (S22) is performed as shown in FIG. Specifically, this is a step of performing a wet etching process on the surface layer of the substrate on which the ions have been implanted in the step of introducing impurities (S21).
- the substrate 8 on which the defect 13 is formed by ion implantation is immersed in the KOH solution 14.
- KOH is potassium hydroxide, which is a strongly alkaline substance having a strong etching property.
- the etching rate of the main surface of the substrate 8 is locally changed (not uniform) due to the presence of the defect 13, so that irregularities are formed on the etched surface. Is done.
- the surface roughness of the surface where the defect is formed increases.
- the amount by which the main surface is etched is substantially the same in the region, and the surface roughness of the main surface does not change greatly.
- the surface roughness can be increased only in the region of the main surface of the substrate 8 where ion implantation is performed and crystal defects 13 are generated. For this reason, the main surface of the ion-implanted region can be used as the irregular reflection surface.
- a thermal diffusion method may be used instead of the above-described ion implantation method.
- an impurity introduction step (S21) is first performed.
- a heat treatment step (S23) is performed instead of the etching step (S22) in the ion implantation method shown in FIG.
- a defect is formed in the region where the impurity is introduced, and as a result, irregularities are formed on the surface of the region where the impurity is introduced.
- the ion implantation method shown in FIG. 10 may be used, but other methods may be used. Specifically, for example, the substrate and the object are overheated in a state where the object including the impurity is in contact with a region of the substrate where the impurity is to be introduced. As a result, impurities diffuse from the object into the substrate by solid diffusion.
- a mask layer is formed so that only a region where impurities are to be introduced is exposed in the substrate, and the substrate on which the mask layer is formed is heated in a heat treatment furnace. During this heating, a gas containing an impurity to be introduced is used as an atmosphere gas in the heat treatment furnace. In this way, impurities can be introduced into a predetermined region of the substrate (region where the mask layer is not formed) by heat treatment.
- the impurity is introduced using the above method (thermal diffusion method) and then the heat treatment step (S23) is performed, the unevenness of the region into which the impurity is introduced in the main surface of the substrate can be increased.
- the irregular reflection surface can be formed.
- the second embodiment of the present invention is different from the first embodiment of the present invention only in each of the points described above. That is, the configuration, conditions, procedures, effects, and the like that have not been described above for the second embodiment of the present invention are all in accordance with the first embodiment of the present invention.
- the substrate 15 shown in FIG. 14 includes a thin film 16 used as a detection region, for example, in one main surface (the upper main surface in FIG. 14) of the substrate 15 in a region from 0.1 mm to 5 mm from the end face.
- the thin film 16 diffusely reflects the light beam 10 incident on the main surface of the substrate 15 from the upper side of the substrate 15 in a direction substantially perpendicular to the main surface of the substrate 15.
- a metal thin film that can reflect visible light (red light), infrared light, and the like at a high rate, such as Cr (chromium), W (tungsten), and Al (aluminum) is used. It is preferable.
- the light incident on the detection region can be diffusely reflected by the thin film 16 as in the above-described substrate 8 according to the second embodiment of the present invention. For this reason, the light rays 10 incident on the photoelectric sensor 30 arranged on the lower side of the substrate 15 (see FIG. 14) are reduced. At this time, the photoelectric sensor 30 can detect the presence of the substrate 15 by recognizing the interruption of the light beam 10.
- the substrate manufacturing method according to Embodiment 3 of the present invention follows the above-described procedure of the substrate manufacturing method according to Embodiment 1 of the present invention shown in FIG. However, in the processing step (S20) of FIG. 3, as the processing for making the light transmittance in at least a partial region of the end portion of the substrate smaller than the light transmittance in the central portion of the main surface of the substrate, FIG. As shown in FIG. 2, a thin film 16 is formed on one main surface of the substrate 15. Since this thin film 16 is used as an irregular reflection surface, the distance in the main surface direction from the end surface of the main surface of the substrate 15 is not less than 0.1 mm and not more than 5 mm, for example, similarly to the substrate 8 shown in FIG.
- the material of the thin film 16 is preferably a metal thin film that can reflect visible light (red light), infrared light, and the like at a high rate, such as Cr, W, and Al.
- the film thickness of the thin film 16 is preferably 0.05 ⁇ m or more and 1.0 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 0.5 ⁇ m or less.
- a vacuum evaporation method, CVD method, sputtering method etc. for example.
- a substrate 11 as shown in FIG. 8 has a structure in which a thin film 16 used as a diffusely reflecting surface and a normal bevel cut surface 4 conventionally used coexist. It may be.
- a structure in which the thin film 16 used as the irregular reflection surface, the end surface 6 and the bevel cut surface 7 coexist may be used.
- an arbitrary shape can be provided on the lower side of the thin film 16 used as the irregular reflection surface of each substrate, for example, to suppress cleavage and chipping of the substrate due to stress.
- the thin film 16 described above is formed as an irregular reflection surface
- the thin film 16 may be formed to be a total reflection surface by controlling the surface state of the thin film 16 and the like.
- the third embodiment of the present invention is different from the second embodiment of the present invention only in the points described above. That is, the configuration, conditions, procedures, effects, and the like that have not been described above for the third embodiment of the present invention are all in accordance with the second embodiment of the present invention.
- the present invention is particularly excellent as a technique that enables a sensor to recognize the presence of a transparent substrate when a process such as manufacturing a semiconductor device is performed using the transparent substrate.
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Abstract
Description
図1を参照して、本発明の実施の形態1に係る基板1は所定厚み(図1の上下方向)を有する、たとえば高周波パワーデバイスや、耐熱・耐放射線デバイスなどの半導体装置に用いる透明の基板である。また図1においては説明の便宜上、基板1は台形状に描写しているが、実際は厚み(図1の上下方向)がたとえば1mm前後、径(図1の左右方向)がたとえば2インチ前後の平板状をなしている。このため図1においては二重波線を用いて、左右方向の幅を省略していることを表わしている。 (Embodiment 1)
Referring to FIG. 1, a
の高いセンサとして作動させることができる。 Since the
全反射面2は、図1に示すように、基板1の外周部の端面のほぼ全体が全反射面2となるように形成されていてもよいが、たとえば図4に示す基板3のように、検出領域に全反射面2と、従来から用いられる通常のベベルカット面4とが共存した構造となっていてもよい。すなわち光線10が入射する側(図4における上側)に全反射面2を、基板3の主表面(図4における左右方向)とのなす角度が光線10を全反射する条件を満たす角度となるように形成し、光線10が入射する側と反対側(図4における下側)には通常の、たとえば基板3のチッピングやへき開を抑制するためのベベルカット面4を形成した構造であってもよい。なお、ベベルカット面4は、図4に示すように全反射面4との接続部の角部の角度が鋭角となるように、基板3の全反射面2が形成された側の主表面と反対側の主表面(裏面)に向かうにつれて基板3の幅が小さくなるように、全反射面2とは逆方向に傾斜するよう形成されている。 With reference to FIG. 4 and FIG. 5, the modification of the form of the board | substrate of this invention is demonstrated.
As shown in FIG. 1, the
図6に示す本発明の実施の形態2に係る基板8は、図1に示す本発明の実施の形態1に係る基板1と基本的に同様の態様を備えている。しかし、図6に示す基板8は、図1などに示す全反射面2に代えて、検出領域において入射する光線10を乱反射させる乱反射面9を備えている。この点において、基板8と基板1とは相違している。 (Embodiment 2)
A
図14に示す基板15は、検出領域として用いる、たとえば基板15の一方の主表面(図14における上側の主表面)のうち端面から0.1mm以上5mm以下の領域に薄膜16を備えている。この薄膜16は、基板15の上側から基板15の主表面に対して基板15の主表面にほぼ垂直な方向に入射する光線10を乱反射させるものである。ここで薄膜16の材質としては、たとえばCr(クロム)、W(タングステン)、Al(アルミニウム)など、可視光(赤色光)や赤外光などを高い割合で反射することができる金属薄膜を用いることが好ましい。 (Embodiment 3)
The
Claims (14)
- 透明な基板(1、3、5、8、11、12、15、20)であり、
前記基板(1、3、5、8、11、12、15、20)の端部の少なくとも一部に形成され、前記基板(1、3、5、8、11、12、15、20)の中央部における光の透過率よりも小さい前記光の透過率を有する検出領域(2、9、13)を備える基板。 A transparent substrate (1, 3, 5, 8, 11, 12, 15, 20),
Formed on at least a part of the end of the substrate (1, 3, 5, 8, 11, 12, 15, 20), the substrate (1, 3, 5, 8, 11, 12, 15, 20) A board | substrate provided with the detection area | region (2, 9, 13) which has the light transmittance smaller than the light transmittance in a center part. - 前記検出領域(2、9、13)は、前記検出領域(2、9、13)に入射する前記光を全反射する全反射面(2)を含む、請求の範囲第1項に記載の基板。 The substrate according to claim 1, wherein the detection region (2, 9, 13) includes a total reflection surface (2) that totally reflects the light incident on the detection region (2, 9, 13). .
- 前記検出領域(2、9、13)は、前記検出領域(2、9、13)に入射する前記光を乱反射する乱反射面(9)を含む、請求の範囲第1項に記載の基板。 The substrate according to claim 1, wherein the detection area (2, 9, 13) includes an irregular reflection surface (9) for irregularly reflecting the light incident on the detection area (2, 9, 13).
- 前記基板(1、3、5、8、11、12、15、20)はSiC、GaN、サファイア、AlN、ダイアモンドからなる群から選択された少なくとも1種を含む、請求の範囲第1項に記載された基板。 The said board | substrate (1, 3, 5, 8, 11, 12, 15, 20) contains at least 1 sort (s) selected from the group which consists of SiC, GaN, a sapphire, AlN, a diamond, The Claim 1st Claim Substrate.
- 透明な基板(1、3、5、8、11、12、15、20)を準備する工程(S10)と、
前記基板(1、3、5、8、11、12、15、20)の端部の少なくとも一部における光の透過率を、前記基板の中央部における前記光の透過率よりも小さくする加工を行なう工程(S20)とを備える、基板の製造方法。 A step (S10) of preparing a transparent substrate (1, 3, 5, 8, 11, 12, 15, 20);
Processing to make the light transmittance in at least a part of the end portion of the substrate (1, 3, 5, 8, 11, 12, 15, 20) smaller than the light transmittance in the central portion of the substrate. A step of performing (S20). - 前記加工を行なう工程(S20)には、前記端部の少なくとも一部に入射する前記光を全反射する全反射面(2)を形成する工程を含む、請求の範囲第5項に記載の基板の製造方法。 6. The substrate according to claim 5, wherein the processing (S20) includes a step of forming a total reflection surface (2) that totally reflects the light incident on at least a part of the end portion. Manufacturing method.
- 前記全反射面(2)を形成する工程には、前記端部の少なくとも一部を機械加工する工程を含む、請求の範囲第6項に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 6, wherein the step of forming the total reflection surface (2) includes a step of machining at least a part of the end portion.
- 前記全反射面(2)を形成する工程には、前記端部の少なくとも一部をレーザ加工する工程を含む、請求の範囲第6項に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 6, wherein the step of forming the total reflection surface (2) includes a step of laser processing at least a part of the end portion.
- 前記加工を行なう工程(S20)には、前記端部の少なくとも一部に入射する光を乱反射する乱反射面(9)を形成する工程を含む、請求の範囲第5項に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 5, wherein the step (S20) of performing the processing includes a step of forming an irregular reflection surface (9) for irregularly reflecting light incident on at least a part of the end portion. .
- 前記乱反射面(9)を形成する工程には、前記端部の少なくとも一部を機械加工する工程を含む、請求の範囲第9項に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 9, wherein the step of forming the irregular reflection surface (9) includes a step of machining at least a part of the end portion.
- 前記乱反射面(9)を形成する工程には、前記端部の少なくとも一部をレーザ加工する工程を含む、請求の範囲第9項に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 9, wherein the step of forming the irregular reflection surface (9) includes a step of laser processing at least a part of the end portion.
- 前記乱反射面(9)を形成する工程には、前記端部の少なくとも一部に不純物の導入を行なう工程(S21)と、前記不純物を導入した領域の表面の面粗度を上げる工程(S22、S23)とを含む、請求の範囲第9項に記載の基板の製造方法。 In the step of forming the irregular reflection surface (9), a step of introducing impurities into at least a part of the end portion (S21), and a step of increasing the surface roughness of the surface into which the impurities are introduced (S22, A method for manufacturing a substrate according to claim 9, comprising S23).
- 前記面粗度を上げる工程(S22、S23)には、前記領域の表面層をエッチングする工程(S22)または前記領域の表面層を熱処理する工程(S23)を含む、請求の範囲第12項に記載の基板の製造方法。 The step (S22, S23) of increasing the surface roughness includes a step (S22) of etching a surface layer of the region or a step of heat treating the surface layer of the region (S23). The manufacturing method of the board | substrate of description.
- 前記乱反射面(9)を形成する工程には、前記端部の少なくとも一部に薄膜(16)を成膜する工程を含む、請求の範囲第9項に記載の基板の製造方法。 The method of manufacturing a substrate according to claim 9, wherein the step of forming the irregular reflection surface (9) includes a step of forming a thin film (16) on at least a part of the end portion.
Priority Applications (4)
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EP09831918A EP2378542A1 (en) | 2008-12-11 | 2009-12-09 | Substrate and method for manufacturing substrate |
CN200980149548XA CN102246265A (en) | 2008-12-11 | 2009-12-09 | Substrate and method for manufacturing substrate |
US13/133,284 US20110241022A1 (en) | 2008-12-11 | 2009-12-09 | Substrate and method of manufacturing substrate |
CA2746568A CA2746568A1 (en) | 2008-12-11 | 2009-12-09 | Substrate and method of manufacturing substrate |
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JP2008315919A JP2010141124A (en) | 2008-12-11 | 2008-12-11 | Substrate and method for manufacturing substrate |
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US (1) | US20110241022A1 (en) |
EP (1) | EP2378542A1 (en) |
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JP2021044565A (en) * | 2020-11-13 | 2021-03-18 | クアーズテック株式会社 | Unevenness identification method of compound semiconductor substrate, and surface inspection device of the compound semiconductor substrate used for them |
WO2021149151A1 (en) * | 2020-01-21 | 2021-07-29 | 三菱電機株式会社 | Semiconductor wafer and method for producing semiconductor device |
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US9082447B1 (en) | 2014-09-22 | 2015-07-14 | WD Media, LLC | Determining storage media substrate material type |
JP6398744B2 (en) | 2015-01-23 | 2018-10-03 | 三菱電機株式会社 | Manufacturing method of substrate for semiconductor device |
CN107623028B (en) * | 2016-07-13 | 2021-02-19 | 环球晶圆股份有限公司 | Semiconductor substrate and processing method thereof |
JP7065759B2 (en) * | 2018-12-14 | 2022-05-12 | 三菱電機株式会社 | A method for detecting a semiconductor wafer substrate and an edge portion of the semiconductor wafer substrate. |
JP2020145272A (en) * | 2019-03-05 | 2020-09-10 | トヨタ自動車株式会社 | Semiconductor wafer |
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- 2009-12-09 KR KR1020117013750A patent/KR20110102334A/en not_active Application Discontinuation
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Also Published As
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KR20110102334A (en) | 2011-09-16 |
TW201029061A (en) | 2010-08-01 |
US20110241022A1 (en) | 2011-10-06 |
EP2378542A1 (en) | 2011-10-19 |
JP2010141124A (en) | 2010-06-24 |
CN102246265A (en) | 2011-11-16 |
CA2746568A1 (en) | 2010-06-17 |
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