WO2010067590A1 - Dispositif de traitement par plasma micro-ondes - Google Patents

Dispositif de traitement par plasma micro-ondes Download PDF

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Publication number
WO2010067590A1
WO2010067590A1 PCT/JP2009/006714 JP2009006714W WO2010067590A1 WO 2010067590 A1 WO2010067590 A1 WO 2010067590A1 JP 2009006714 W JP2009006714 W JP 2009006714W WO 2010067590 A1 WO2010067590 A1 WO 2010067590A1
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Prior art keywords
microwave
waveguide
microwave plasma
processing chamber
processing apparatus
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PCT/JP2009/006714
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English (en)
Japanese (ja)
Inventor
山田幸司
青谷正毅
篠田大樹
國廣一郎
Original Assignee
東洋製罐株式会社
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Priority to JP2010542017A priority Critical patent/JP5556666B2/ja
Publication of WO2010067590A1 publication Critical patent/WO2010067590A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Definitions

  • the present invention relates to a microwave plasma processing apparatus for forming a chemical vapor deposition film on a three-dimensional container, and more particularly to a microwave plasma processing apparatus for performing film formation processing on a plurality of containers at the same time by a single microwave oscillator.
  • Chemical vapor deposition is a technology for depositing reaction products in the form of a film on the surface of an object to be processed by vapor phase growth in a high-temperature atmosphere using a processing gas that does not react at room temperature. It is widely used in the manufacture of metal and surface modification of metals and ceramics. Recently, CVD has also been applied as a low-pressure plasma CVD for surface modification of plastic containers, particularly for improving gas barrier properties.
  • Plasma CVD is a method for growing thin films using plasma. Basically, it is generated by dissociating and combining gases containing a processing gas under a reduced pressure with electric energy of a high electric field. This is a method of depositing the processed material on the processing object by chemical reaction in the gas phase or on the processing object.
  • the plasma state is realized by glow discharge, corona discharge, arc discharge, etc.
  • glow discharge a method using direct current glow discharge, a method using high frequency glow discharge (high frequency plasma CVD).
  • a method using microwave discharge microwave discharge (microwave plasma CVD) is known.
  • Microwave plasma CVD is generally composed of a microwave oscillator, a microwave processor, and a waveguide connecting them.
  • the microwave output from the microwave oscillator propagates through the waveguide and is sent to the microwave processor.
  • predetermined processing such as thin film formation is performed in the microwave processor.
  • Patent Document 1 has the following problems. For example, in the branching waveguide, microwave loss occurs at the branching point. For this reason, the microwave conduction efficiency has deteriorated.
  • the equipment size is larger than that of the straight waveguide.
  • the branch waveguide has a higher structure because the structure is more complicated than that of the straight waveguide.
  • the present invention has been made to solve the above-mentioned problems, enables a reduction in equipment size and equipment cost, and can supply microwaves to a processor with high conduction efficiency, and
  • An object of the present invention is to provide a microwave plasma processing apparatus capable of simultaneously performing film formation on a plurality of processing objects.
  • the microwave plasma processing apparatus of the present invention includes one waveguide that propagates microwaves and two or more processing chambers that perform predetermined processing using microwaves, and each processing The chamber has an inlet for introducing microwaves from the waveguide, and two or more inlets are formed at the end of the waveguide.
  • the microwave plasma processing apparatus of the present invention includes a waveguide that propagates microwaves and a processor that receives microwaves, and the processor performs two or more processes that perform predetermined processing using the microwaves.
  • Each processing chamber introduces microwaves from the relay path. It has a configuration in which two or more introduction ports are formed at the end portion in the propagation direction of the microwave in the relay path.
  • microwaves can be supplied from a single waveguide to a plurality of processing chambers. For this reason, compared with the structure which attaches a waveguide or microwave oscillator for exclusive use to each of several process chambers, the number of parts can be reduced, and simplification of an apparatus structure and reduction of apparatus cost can be aimed at. Also, since the waveguide can be a straight tube type instead of a branch type, the equipment size can be reduced and the equipment cost can be reduced.
  • the waveguide has no branching or bending portions, the loss of microwaves can be eliminated.
  • film formation processing can be performed simultaneously on a plurality of containers. This makes it possible to improve production capacity and reduce coating costs.
  • FIG. 1 is a cut-away top view of the main part showing the configuration of the microwave plasma processing apparatus of the present embodiment.
  • FIG. 2 is a perspective view showing the configuration of the microwave processor.
  • the microwave plasma processing apparatus 1 a includes a microwave power source 10, a microwave oscillator 20, a waveguide 30 a, a microwave processor 40 a, and a vacuum pump 50.
  • the microwave power supply 10 supplies power to the microwave oscillator 20.
  • the microwave oscillator 20 receives power from the microwave power supply 10 and generates and outputs a microwave. In the present embodiment, only one microwave oscillator 20 is provided.
  • any conventionally known suitable microwave power source and microwave oscillator can be used.
  • the waveguide 30a propagates the microwave output from the microwave oscillator 20 to the microwave processor 40a.
  • the waveguide 30a is a straight tube type. That is, the waveguide 30a does not have a branch portion (T branch, Y branch, etc.) or a bent portion (bend). Thereby, the loss of microwave energy can be reduced.
  • the waveguide 30a may have a rectangular cross section or a circular shape.
  • the waveguide 30a can include an isolator 31, a matching unit 32, and the like.
  • the microwave processor 40 a includes a casing 41, a receiving port 42 formed in the casing 41, a relay path 43 a, and a plurality (two in this embodiment).
  • Process chamber 44 (44-1, 44-2).
  • casing 41 is a thick container formed with the material which interrupts
  • a waveguide 30 a is connected to the receiving port 42, and microwaves are received from the waveguide 30 a into the housing 41.
  • the relay path 43 a is a path for propagating the microwave received at the receiving port 42 to the processing chamber 44. Inside the relay path 43a, the microwaves from the waveguide 30a are divided and propagated to the processing chambers 44.
  • a vacuum partition 45 is provided in the relay path 43 a and in the vicinity of the receiving port 42.
  • the vacuum partition 45 is a partition that prevents the vacuum state from reaching the waveguide 30a and the microwave oscillator 20 when the processing chamber 44 is in a vacuum state (depressurized state). Further, the vacuum partition 45 sends the microwave propagated through the waveguide 30 a to the processing chamber 44 while maintaining the vacuum state of the processing chamber 44.
  • the vacuum partition 45 is preferably formed of a low dielectric material having mechanical characteristics that can withstand the differential pressure between the waveguide 30a and the processing chamber 44 and having low microwave energy loss. Specifically, for example, it can be formed of quartz glass, alumina, fluororesin (Teflon (registered trademark)), or the like.
  • the processing chamber (coating chamber) 44 is a space for performing predetermined processing using the microwaves sent from the relay path 43a.
  • Examples of the predetermined process include a film forming process and an etching process.
  • the processing chamber 44 is preferably formed in a cylindrical shape. By forming it in a cylindrical shape, it becomes a semi-coaxial resonance system, and an electric field concentrates around the gas nozzle 60 and the periphery thereof, enabling stable plasma emission.
  • a plurality of processing chambers 44 are formed in the casing 41 (two in this embodiment).
  • the two processing chambers 44 (first processing chamber 44-1 and second processing chamber 44-2) are formed in the same cylindrical shape.
  • Each processing chamber 44 is provided with an introduction port (microwave introduction port) 46 for receiving the microwave transmitted from the relay path 43a.
  • the introduction port (first introduction port) 46-1 of the first processing chamber 44-1 and the introduction port (second introduction port) 46-2 of the second processing chamber 44-2 are microwaves in the relay path 43a. Are respectively disposed at the end portions (relay path end portions) 47 in the propagation direction.
  • 3 (i-1) to (i-3) show an example in which two processing chambers 44 (introduction ports 46) are arranged at positions separated from each other.
  • FIGS. 4 (ii-1) to (ii-3) show an example in which two processing chambers 44 (introduction ports 46) are disposed at positions in contact with each other.
  • FIGS. 5 (iii-1) to (iii-3) show the case where the two processing chambers 44 are arranged in a partially overlapping position (the introduction port 46 is arranged in a position in contact with each other).
  • each processing chamber 44 overlaps a part of the relay path end portion 47 and two processings are performed.
  • the surface including the center O of the radial cross section of the chamber 44 includes the end surface S of the relay path 43a ((i-1) in the figure), and each processing chamber 44 slightly overlaps the relay path end portion 47. (FIG. (I-2)), each processing chamber 44 overlaps the side surface 431 of the relay path 43a while overlapping with the relay path end portion 47 (FIG. (I-3)).
  • each processing chamber 44 overlaps a part of the relay path end portion 47 and two processings are performed.
  • the surface including the center O of the radial cross section of the chamber 44 includes the end surface S of the relay path 43a ((ii-1) in the figure), and each processing chamber 44 overlaps part of the relay path end portion 47 and relays.
  • each processing chamber 44 overlaps a part of the relay path end portion 47 and slightly overlaps the side surface 431 of the relay path 43a (Fig. (Iii-2)).
  • each processing chamber 44 overlaps a part of the relay path end portion 47 and overlaps a large amount on the side surface 431 of the relay path 43a ((iii-3) in the figure).
  • the relay path termination portion 47 exists as the termination surface S.
  • the relay path termination portion 47 does not exist as the termination surface S.
  • the relay path termination portion 47 (or termination surface S) is a termination in the microwave propagation direction on the upper surface of the relay path 43a. It can be a portion (or a surface) including the end of the microwave propagation direction on the lower surface. Or it can be set as the part (or surface which contains) the side which these two inlets 46 contact among four sides of the rectangular inlet 46 formed in the two process chambers 44, respectively.
  • FIGS. 3 (i-1) to (i-3), FIGS. 4 (ii-1) to (ii-3), and FIGS. 5 (iii-1) to (iii-3) are two.
  • the two processing chambers 44 and the introduction ports 46 formed in the processing chambers 44 are all formed in the same shape, and are arranged with a vertical plane T passing through the center of the radial cross section of the waveguide 30 as a symmetry plane. ing.
  • the microwaves can be uniformly fed into the processing chambers 44.
  • the larger the opening area of the introduction port 46 the higher the microwave.
  • Microwaves can be divided and supplied more evenly with less energy loss.
  • FIG. 8 (v-1) is a diagram showing a state in which the first processing chamber 44-1 and the second processing chamber 44-2 overlap each other. The structure is similar to that shown in v-2).
  • the partition plate 48 is a plate-like member provided at a communication portion between the first processing chamber 44-1 and the second processing chamber 44-2.
  • the partition plate 48 is made of a material that does not transmit microwaves, such as a nonmagnetic metal. As a result, microwaves do not pass between the first processing chamber 44-1 and the second processing chamber 44-2, and stable plasma can be generated in each processing chamber 44.
  • the partition plate 48 can have a shape in which a large number of holes 482 are formed in the plate member 481. Accordingly, air can be circulated between the first processing chamber 44-1 and the second processing chamber 44-2 through the hole 482. In addition, when the air inside the second processing chamber 44-2 is sucked using the vacuum pump 50 connected to the second processing chamber 44-2, the air in the first processing chamber 44-1 also becomes a hole in the partition plate 48. Suction can be via 482. Therefore, the vacuum pump 50 is connected only to either the first processing chamber 44-1 or the second processing chamber 44-2, so that the first processing chamber 44-1 and the second processing chamber 44 are connected. -2 air can be aspirated. Thereby, since it becomes unnecessary to provide the vacuum pump 50 and the exhaust pipe 51 for every process chamber 44, equipment cost can be held down.
  • first processing chamber 44-1 and the second processing chamber 44-2 communicate with each other via the relay path 43a by providing the vacuum partition wall 45 in the vicinity of the receiving port 42 inside the relay path 43a.
  • the vacuum pump 50 when air is sucked from the second processing chamber 44-2 using the vacuum pump 50, the air in the first processing chamber 44-1 is also sucked through the relay path 43a. Also with this configuration, it is not necessary to provide the vacuum pump 50 and the exhaust pipe 51 for each processing chamber 44, so that the equipment cost can be reduced.
  • the diameter of the hole 482 needs to be a size that suppresses the transmission of the microwave.
  • the diameter of the hole 482 is preferably 1/20 or less of the wavelength of the microwave.
  • the wavelength of the microwave is about 120 mm, and the diameter of the hole 482 is preferably about 6 mm or less.
  • FIG. 8 is a distribution diagram showing the electric field strength in the two processing chambers 44 formed in the microwave processor 40a of the present embodiment.
  • FIG. 9 is a distribution diagram showing the electric field strength in the processing chamber when one processing chamber is provided.
  • a container as a processing object is stored (set) in each of the plurality of processing chambers 44.
  • the container is stored upside down so that the mouth of the plastic bottle faces down.
  • a lid (not shown) is placed on the upper surface of the casing 41 to seal the processing chamber 44.
  • the vacuum pump 50 is operated to bring the inside of each processing chamber 44 into a reduced pressure state.
  • a processing gas is supplied from a gas nozzle (not shown) located inside the container.
  • microwave oscillator 20 When a predetermined amount of processing gas is supplied, next, power is supplied from the microwave power source 10 to the microwave oscillator 20 as a film forming stage.
  • the microwave oscillator 20 generates and outputs a microwave with the electric power received from the microwave power supply 10.
  • the waveguide 30a sends the microwave output from the microwave oscillator 20 to the microwave processor 40a.
  • the microwave processor 40 a receives the microwave from the waveguide 30 a at the receiving port 42.
  • the relay path 43a propagates the microwave in a direction toward the first processing chamber 44-1 and a direction toward the second processing chamber 44-2.
  • the microwave introduced into each processing chamber 44 brings the processing gas into a high energy state and a plasma state.
  • the plasma processing gas acts on the inner surface of the container and deposits to form a coating film.
  • FIG. 10 is a line graph showing the measurement results of the film thickness distribution.
  • FIG. 11 is a bar graph showing measurement results of oxygen barrier performance.
  • a microwave plasma processing apparatus 1a shown in FIG. 1 was prepared, and a film forming process was performed using a 500 ml PET bottle as a processing target.
  • the film forming process was performed according to the following procedure. After setting the PET bottles in both the first processing chamber 44-1 and the second processing chamber 44-2, the inside and outside of the PET bottles are evacuated, and the reactive gas (oxygen 30 sccm, hexamethyldisiloxane) required at the time of vapor deposition.
  • the reactive gas oxygen 30 sccm, hexamethyldisiloxane
  • HMDSO 3 sccm
  • a predetermined pressure is reached (vacuum inside the bottle is 8 Pa or less, vacuum inside the processing chamber (outside of the bottle) is about 3000 Pa)
  • a microwave of 2.45 GHz is introduced and plasma for 6 seconds is introduced. Vapor deposition was performed.
  • the thickness of the formed thin film was measured. Measurements were made at 15 mm, 45 mm, 75 mm, 105 mm, 135 mm, and 156 mm heights from the bottom of the PET bottle, and the Si amount in the film at each measurement site was measured using a fluorescent X-ray apparatus manufactured by Rigaku Corporation. The film thickness distribution was measured by converting the calibration curve into the film thickness. As a result, as shown in FIG. 10, the film thickness was in the range of 4 nm to 9 nm at any height. That is, a thin film having a sufficient thickness was obtained at any height. Further, there was almost no difference in film thickness between the thin film formed in the first processing chamber 44-1 and the thin film formed in the second processing chamber 44-2.
  • a film forming process was performed on a PET bottle as a processing target.
  • the film forming process is the same as the film forming process in the above-described film thickness distribution measurement. However, here, the film forming process was performed twice in order to confirm the barrier performance of each processing chamber.
  • plastic bottles are placed in an inverted state in the first treatment chamber 44-1 and the second treatment chamber 44-2, respectively, and film formation is performed on these two plastic bottles (containers 11 and 21). Processed.
  • the plastic bottles are placed in an inverted state in the first processing chamber 44-1 and the second processing chamber 44-2, and the two plastic bottles (containers 12, 22) are placed on the two processing bottles.
  • a film forming process was performed. After the film formation process was completed, the oxygen permeation amount of the PET bottle was measured using an oxygen barrier property tester OX-TRAN (37 ° C.) manufactured by MOCON. The measurement was performed on a total of five PET bottles (containers 11, 12, 21, and 22) subjected to the film forming process and one PET bottle not subjected to the film forming process.
  • the oxygen permeation amounts of the containers 11, 12, 21, and 22 are much higher than the oxygen permeation amount of the undeposited PET bottles ("Non-deposition" in the figure). It showed a low value. That is, from the measurement results, it was found that a high-quality thin film having high barrier properties was formed in both the first processing chamber 44-1 and the second processing chamber 44-2.
  • the microwave plasma processing apparatus of this embodiment since a straight waveguide can be used, the equipment size can be reduced as compared with the case where a branched waveguide is used. In addition, since it is not necessary to provide a waveguide, a microwave oscillator, or the like for each processing chamber, the number of components in the microwave supply system can be reduced, and the equipment cost can be reduced.
  • predetermined processing can be simultaneously performed on a plurality of containers.
  • the predetermined process is a film forming process
  • a high-quality thin film can be formed as in the case where the number of processing chambers is one.
  • FIG. 2 is a cut-away top view of the main part showing the configuration of the microwave plasma processing apparatus of the present embodiment.
  • This embodiment is different from the first embodiment in the structure of the waveguide and the relay path. That is, in the first embodiment, the end of the waveguide is joined to the receiving port on the side surface of the housing and the relay path is formed from the receiving port to the introducing port.
  • the wave tube enters the inside of the casing, and the end of the waveguide is connected to the relay path or the introduction port in the casing.
  • Other components are the same as those in the first embodiment. Therefore, in FIG. 12, the same components as those in FIG.
  • the microwave plasma processing apparatus 1 b includes a microwave power source 10, a microwave oscillator 20, a waveguide 30 b, a microwave processor 40 b, and a vacuum pump 50.
  • the waveguide 30b propagates the microwave output from the microwave oscillator 20 to the microwave processor 40b.
  • a part of the waveguide 30b is inserted into the microwave processor 40b, and is connected to the relay path 43b at the insertion destination.
  • the waveguide 30b is inserted to the point where the terminal portion is in contact with the inlet 46 of the processing chamber 44, as shown in FIG.
  • the waveguide 30b is not limited to being inserted until the end portion is in contact with the introduction port 46, and may be inserted up to the front of the introduction port 46.
  • a vacuum partition 33 is provided inside the waveguide 30b.
  • the vacuum partition 33 is formed of a low dielectric material having mechanical characteristics that can withstand the differential pressure between the waveguide 30b and the processing chamber 44, as well as the vacuum partition 45 of the first embodiment. It is preferable.
  • the vacuum partition 33 is provided in the waveguide 30 b at a position separated from the introduction port 46. Therefore, the first processing chamber 44-1 and the second processing chamber 44-2 communicate with each other through the waveguide 30b (the space between the vacuum partition wall 33 and the two inlets 46).
  • the microwave processor 40b has a relay path 43b and a plurality (two in this embodiment) of processing chambers (coating chambers) 44 (44-1, 44-2). ing.
  • the relay path 43 b is a path for propagating the microwave from the waveguide 30 b to the processing chamber 44. Inside the relay path 43b, the microwaves from the waveguide 30b are divided and propagated to the processing chambers 44.
  • Each processing chamber 44 is provided with an introduction port (microwave introduction port) 46 for receiving the microwaves sent from the waveguide 30b and the relay path 43b.
  • the introduction port (first introduction port) 46-1 of the first processing chamber 44-1 and the introduction port (second introduction port) 46-2 of the second processing chamber 44-2 are propagated through the relay path 43b.
  • Each of the direction end portions 47 is disposed.
  • the contact portion or overlapping portion between the first processing chamber 44-1 and the second processing chamber 44-2 is shown in FIGS. 6 (iv-1) to (iv-3), (v-1) to (v-3).
  • the microwave plasma processing method of this embodiment is the same as the microwave plasma processing method of the first embodiment.
  • the microwave processing in the microwave plasma processing apparatus of the first embodiment is performed. Microwaves do not leak at the receiving port of the vessel. Further, since the waveguide is a straight tube type having no branching portion, the energy loss of the microwave can be suppressed and the equipment size can be reduced. Further, since a plurality of processing chambers are provided, a predetermined process such as film formation can be simultaneously performed on a plurality of processing objects.
  • FIG. 2 is a cut-away top view of the main part showing the configuration of the microwave plasma processing apparatus of the present embodiment.
  • This embodiment is different from the first embodiment in the structure of the microwave processor. That is, in the first embodiment, two processing chambers are formed in one thick casing, and a relay path is provided between these processing chambers and the receiving port. In the embodiment, there is no casing or relay path as in the first embodiment, and the waveguide is directly connected to the processing chamber. Other components are the same as those in the first embodiment. Therefore, in FIG. 13, the same components as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the microwave plasma processing apparatus 1 c includes a microwave power source 10, a microwave oscillator 20, a waveguide 30 c, a microwave processor 40 c, and a vacuum pump 50.
  • the waveguide 30c propagates the microwave output from the microwave oscillator 20 to the microwave processor 40c.
  • the waveguide 30 c of this embodiment is directly connected to the inlet 46 of the processing chamber 44. This is different from the waveguide 30a of the first embodiment connected to the receiving port 42 of the microwave processor 40a.
  • the waveguide 30c is approximate to the waveguide 30a of the first embodiment in that it is a straight tube type, has no branching and bending portions, and has a rectangular or circular cross section.
  • a vacuum partition 33 is provided inside the waveguide 30c.
  • the vacuum partition 33 is formed of a low dielectric material having mechanical characteristics that can withstand the differential pressure between the waveguide 30c and the processing chamber 44, and having a low microwave energy loss, like the vacuum partition 45 of the first embodiment. It is preferable.
  • the vacuum partition wall 33 is provided inside the waveguide 30 c and at a position separated from the introduction port 46. Therefore, the first processing chamber 44-1 and the second processing chamber 44-2 communicate with each other through the waveguide 30c (the space between the vacuum partition wall 33 and the two inlets 46).
  • the microwave processor 40c has a plurality of (two in this embodiment) processing chambers (coating chambers) 44 (44-1, 44-2).
  • the processing chamber 44 is a space for performing predetermined processing using the microwave transmitted from the waveguide 30c.
  • the processing chamber 44 is covered with an outer wall 49.
  • the entire outer wall 49 is formed in a cylindrical shape, and the hollow portion constitutes the processing chamber 44.
  • the outer wall of the first processing chamber 44-1 is a first outer wall 49-1
  • the outer wall of the second processing chamber 44-2 is a second outer wall 49-2.
  • Each processing chamber 44 is provided with an introduction port (microwave introduction port) 46 for receiving the microwave transmitted from the waveguide 30c.
  • the introduction port (first introduction port) 46-1 of the first processing chamber 44-1 and the introduction port (second introduction port) 46-2 of the second processing chamber 44-2 are provided at the end of the waveguide 30c. Each is arranged.
  • the relay path 43 in FIGS. 3 to 5 is omitted in the present embodiment, and the waveguide 30 c is directly connected to the processing chamber 44.
  • the contact portion or overlapping portion between the first processing chamber 44-1 and the second processing chamber 44-2 is shown in FIGS. 6 (iv-1) to (iv-3), (v-1) to (v-3).
  • the microwave plasma processing method of this embodiment is the same as the microwave plasma processing method of the first embodiment.
  • microwaves are supplied to the processing chambers to perform predetermined processing. Can be done simultaneously.
  • a straight pipe waveguide can be used instead of a branch waveguide, the equipment size can be reduced and the equipment cost can be reduced.
  • microwave plasma processing apparatus of the present invention
  • the microwave plasma processing apparatus according to the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the present invention. It goes without saying that implementation is possible.
  • the configuration including two processing chambers is shown, but the number of processing chambers is not limited to two, and three or more processing chambers may be provided.
  • the present invention relates to a structure of a device that generates plasma using microwaves
  • the present invention can be used for devices and equipment that handle microwaves and plasmas.

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Abstract

L'invention concerne un dispositif de traitement par plasma micro-ondes qui est équipé d'un guide d'ondes (30a), dans lequel se propagent les micro-ondes, et deux ou plusieurs chambres de traitement (44), dans lesquelles un traitement prescrit se déroule à l'aide de micro-ondes. Chaque chambre de traitement (44) possède un orifice d'entrée (46) à travers lequel on introduit les micro-ondes à partir du guide d'ondes (30a), et au moins deux desdits orifices d’entrée (46) sont formés dans l’extrémité (47) du guide d'ondes (30a).
PCT/JP2009/006714 2008-12-11 2009-12-09 Dispositif de traitement par plasma micro-ondes WO2010067590A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010542017A JP5556666B2 (ja) 2008-12-11 2009-12-09 マイクロ波プラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-315592 2008-12-11
JP2008315592 2008-12-11

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WO2010067590A1 true WO2010067590A1 (fr) 2010-06-17

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Citations (4)

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JPH0649647A (ja) * 1992-07-29 1994-02-22 Hitachi Ltd マイクロ波プラズマ処理装置
JPH11111493A (ja) * 1997-09-29 1999-04-23 Sumitomo Metal Ind Ltd プラズマ処理装置
JP2004538367A (ja) * 2001-08-07 2004-12-24 カール−ツアイス−シュティフツンク 物品をコーティングする装置
JP2005526913A (ja) * 2002-05-24 2005-09-08 ショット アーゲー 複数場所コーティング装置およびプラズマコーティングの方法

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* Cited by examiner, † Cited by third party
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JPH0339480A (ja) * 1989-07-05 1991-02-20 Sony Corp Ｅｃｒプラズマ装置
JP3703877B2 (ja) * 1995-05-16 2005-10-05 東京エレクトロン株式会社 プラズマ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0649647A (ja) * 1992-07-29 1994-02-22 Hitachi Ltd マイクロ波プラズマ処理装置
JPH11111493A (ja) * 1997-09-29 1999-04-23 Sumitomo Metal Ind Ltd プラズマ処理装置
JP2004538367A (ja) * 2001-08-07 2004-12-24 カール−ツアイス−シュティフツンク 物品をコーティングする装置
JP2005526913A (ja) * 2002-05-24 2005-09-08 ショット アーゲー 複数場所コーティング装置およびプラズマコーティングの方法

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