WO2010066081A1 - Procédé et appareil de nettoyage d’une plaquette semi-conductrice - Google Patents

Procédé et appareil de nettoyage d’une plaquette semi-conductrice Download PDF

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Publication number
WO2010066081A1
WO2010066081A1 PCT/CN2008/073471 CN2008073471W WO2010066081A1 WO 2010066081 A1 WO2010066081 A1 WO 2010066081A1 CN 2008073471 W CN2008073471 W CN 2008073471W WO 2010066081 A1 WO2010066081 A1 WO 2010066081A1
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WO
WIPO (PCT)
Prior art keywords
mega sonic
ultra
gap
semiconductor substrate
wafer
Prior art date
Application number
PCT/CN2008/073471
Other languages
English (en)
Inventor
Jian Wang
Sunny Voha Nuch
Liangzhi Xie
Junping Wu
Zhaowei Jia
Yunwen Huang
Zhifeng Gao
Hui Wang
Original Assignee
Acm Research (Shanghai) Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Research (Shanghai) Inc. filed Critical Acm Research (Shanghai) Inc.
Priority to JP2011539870A priority Critical patent/JP5367840B2/ja
Priority to SG2011042710A priority patent/SG172096A1/en
Priority to KR1020117015974A priority patent/KR101546660B1/ko
Priority to US13/133,826 priority patent/US9595457B2/en
Priority to PCT/CN2008/073471 priority patent/WO2010066081A1/fr
Publication of WO2010066081A1 publication Critical patent/WO2010066081A1/fr
Priority to US15/418,309 priority patent/US10020208B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B08B3/123—Cleaning travelling work, e.g. webs, articles on a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Definitions

  • the present invention generally relates to method and apparatus for cleaning semiconductor wafer. More particularly, relates to changing a gap between an ultra/mega sonic device and a wafer for each rotation of the wafer during the cleaning process to achieve an uniform ultra/mega sonic power density distribution on the wafer, which removes particles efficiently without damaging the device structure on the wafer.
  • transistor devices are manufactured or fabricated on semiconductor wafers using a number of different processing steps to create transistor and interconnection elements.
  • conductive (e.g., metal) trenches, vias, and the like are formed in dielectric materials as part of the semiconductor device. The trenches and vias couple electrical signals and power between transistors, internal circuit of the semiconductor devices, and circuits external to the semiconductor device.
  • the semiconductor wafer may undergo, for example, masking, etching, and deposition processes to form the desired electronic circuitry of the semiconductor devices.
  • multiple masking and plasma etching step can be performed to form a pattern of recessed areas in a dielectric layer on a semiconductor wafer that serve as trenches and vias for the interconnections.
  • a wet cleaning step is necessary.
  • the side wall loss in trench and via during is crucial for maintaining the critical dimension.
  • a source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid is disclosed in U.S. Pat. No. 6,039,059.
  • fluid is sprayed onto both sides of a wafer while a probe is positioned close to an upper side.
  • a short probe is positioned with its end surface close to the surface, and the probe is moved over the surface as wafer rotates.
  • a source of energy vibrates a rod which rotates around it axis parallel to wafer surface is disclosed in U.S. Pat. No. 6,843,257 B2.
  • the rod surface is etched to curve groves, such as spiral groove.
  • One method of the present invention is to put a mega sonic device adjacent to front side of a rotating wafer during the cleaning process, and to increase the gap between the mega sonic device and the wafer for each rotation of the wafer.
  • the increment of the gap for each rotation of the wafer is a friction of half wavelength of mega sonic wave, and the total increment of the gap is in the range of 0.5 ⁇ N, where ⁇ is the wavelength of mega sonic wave, and N is an integer number starting from 1.
  • Another method of the present invention is to put a mega sonic device adjacent to front side of a rotating wafer during the cleaning process, and to reduce the gap between the mega sonic device and the wafer for each rotation of the wafer.
  • the reduction of the gap for each rotation of the wafer is a friction of half wavelength of mega sonic wave, and the total reduction of the gap is in the range of 0.5 ⁇ N, where ⁇ is the wavelength of mega sonic wave, and N is an integer number starting from 1.
  • Another method of the present invention is to put a mega sonic device adjacent to back side of a rotating wafer, and to increase the gap between the mega sonic device and the wafer for each rotation of the wafer during the cleaning process.
  • the increment of the gap for each rotation of the wafer is a friction of half wavelength of mega sonic wave, and the total increment of the gap is in the range of 0.5 ⁇ N, where ⁇ is the wavelength of mega sonic wave, and N is an integer number starting from 1.
  • Another method of the present invention is to put a mega sonic device adjacent to back side of a rotating wafer, and to reduce the gap between the mega sonic device and the wafer for each rotation of the wafer during the cleaning process.
  • the reduction of the gap for each rotation of the wafer is a friction of half wavelength of mega sonic wave, and the total reduction of the gap is in the range of 0.5 ⁇ N, where ⁇ is the wavelength of mega sonic wave, and N is an integer number starting from 1.
  • FIGs. 1 A-ID depict an exemplary wafer cleaning apparatus
  • FIG. 2 depicts an exemplary wafer cleaning process
  • FIGs. 3 A-3B depicts another exemplary wafer cleaning process
  • FIG. 4 depicts another exemplary wafer cleaning apparatus
  • FIG. 5 depicts a cleaning method
  • FIG. 6 depicts another exemplary wafer cleaning apparatus
  • FIG. 7 depicts another exemplary wafer cleaning apparatus
  • FIG. 8 depicts another exemplary wafer cleaning apparatus
  • Fig. 9 depicts another exemplary wafer cleaning apparatus
  • FIG. 10 A- 1OG depicts variety of shape of ultra/mega sonic transducers.
  • FIGs. IA to IB show the conventional wafer cleaning apparatus using a mega sonic device.
  • the wafer cleaning apparatus consists of wafer 1010, wafer chuck 1014 being rotated by rotation driving mechanism 1016, nozzle 1012 delivering cleaning chemicals or de-ionized water 1032, and mega sonic device 1003.
  • the mega sonic device 1003 further consists of piezoelectric transducer 1004 acoustically coupled to resonator 1008.
  • Transducer 1004 is electrically excited such that it vibrates and the resonator 1008 transmits high frequency sound energy into liquid.
  • the agitation of the cleaning liquid produced by the mega sonic energy loosens particles on wafer 1010. Contaminants are thus vibrated away from the surfaces of the wafer 1010, and removed from the surfaces through the flowing liquid 1032 supplied by nozzle 1012.
  • d is the thickness of water film or gap between mega-sonic device 1003 and wafer 1010
  • n is an integer number
  • ⁇ is wavelength of mega sonic wave in water.
  • ⁇ 1.6 mm
  • d 0.8 mm, 1.6 mm, 2.4 mm, and so on.
  • Fig. ID shows the relationship between gap d and mega sonic power density measured by sensor 1002 as shown in Fig. IA. Power density is varies from valley value 20 w/cm2 to peak value 80 w/cm2 as gap size increase 0.4 mm, and reach a full cycle in the gap increment of 0.8 mm (0.5 ⁇ ). It is critical to maintain a gap precisely in order to keep a uniform mega sonic power distribution on the entire wafer.
  • FIG. 3A and 3B Another possible gap variation is caused by rotation axis of chuck being not veridical to surface of wafer 3010 as shown in Fig. 3A and 3B.
  • the wafer is wobbling when rotating, and Fig. 3B shows gap status after rotating 180 degree from status as shown in Fig. 3 A.
  • the gap at edge of wafer reduces from a biggest value as shown in Fig. 3 A to smallest value as shown in Fig. 3B. It will cause non uniform mega sonic power density distribution on wafer as wafer passing mega sonic device. All such non uniform power distribution will either cause damage to device structure on the wafer and no uniformly cleaning wafer.
  • the present invention discloses a method as shown in Fig. 4.
  • the gap between mega sonic device 4003 and wafer 4010 is increased or reduced by lead screw 4005 and motor 4006 as chuck 4014 rotating during cleaning process.
  • Control unit 4088 is used to control the speed of motor 4006 based on speed of motor 4016. For each rotation of wafer
  • control unit 4088 instructs motor 4006 to move mega sonic device 4003 up or down:
  • ⁇ is wavelength of ultra/mega sonic wave
  • N is an integer number between 2 to 1000.
  • each portion of the wafer will receive full cycle of mega sonic power when mega sonic device moves up half wavelength of mega sonic wave (about 0.8 mm for frequency of 937.5 kHz). This will guarantee each location of wafer to receive the same mount of mega sonic power density including the same average power density, the same maximum power density, and the same minimum power density.
  • the operation sequence can be set as follows:
  • Step 1 rotating wafer at speed of ⁇ , and ⁇ is in the range of 10 rpm to 1500 rpm.
  • Step 2 move mega sonic device to adjacent to wafer with gap d, and d is in the range of 0.5 to 15 mm.
  • Step 3 turn on nozzle with deionized (DI) water or chemicals, and turn the mega sonic device on.
  • Step 4 for each rotation of chuck, move mega sonic device up 0.5 ⁇ /N (mm), where N is an integer number and in the range of 2 to 1000.
  • Step 5 continue step 4 until mega sonic device movies up total 0.5n ⁇ (mm), where n is an integer number starting from 1.
  • Step 6 for each rotation of chuck, move mega sonic device down 0.5 ⁇ /N (mm), where N is an integer number and in the range of 2 to 1000.
  • Step 7 continue step 6 until mega sonic device movies down total 0.5n ⁇ (mm), where, n is an integer number starting form 1.
  • Step 8 repeat step 4 to step 7 until wafer is cleaned.
  • Step 9 turn off mega sonic devices, stop the DI water or chemicals, and then dry the wafer.
  • Step 1 rotating wafer at speed of ⁇ , and ⁇ is in the range of 10 rpm to 1500 rpm.
  • Step 2 move mega sonic device to adjacent to wafer with gap d, and d is in the range of 0.5 to 15 mm.
  • Step 3 turn on nozzle with deionized (DI) water or chemicals, and turn the mega sonic device on.
  • DI deionized
  • Step 4 for each rotation of chuck, move mega sonic device up 0.5 ⁇ /N (mm), where N is an integer number and in the range of 2 to 1000.
  • Step 5 continue step 4 until mega sonic device movies up total 0.5n ⁇ (mm), where n is an integer number starting form 1.
  • Step 6 turn off mega sonic devices, stop the DI water or chemicals, and then dry the wafer.
  • the frequency of transducer can be set at ultra sonic range and mega sonic range, depending on the particle to be cleaned. The larger the particle size is, the lower frequency should be used. Ultra sonic range is between 20 kHz to 200 kHz, and mega sonic range is between 200 kHz to 10 MHz. Also frequency of mechanical wave can be alternated either one at a time in succession or concurrently in order to clean different size of particles on the same substrate or wafer. If a dual frequency of waves are used, the higher frequency ft should be multiple integer number of lower frequency f 2 , and the transducer moving range should be the 0.5 ⁇ 2 n, increment or reduction of gap for each rotation of chuck should be
  • ⁇ 2 is wavelength of the wave with the lower frequency f 2
  • X 1 is wavelength of the wave with the higher frequency f ⁇
  • N is an integer number between 2 to 1000
  • n is an integer number starting from 1.
  • FIG. 6 shows another embodiment of wafer cleaning apparatus using a mega sonic device according to the present invention.
  • the embodiment is similar to that shown in Fig. 4, except that chuck 6014 is moved vertically by lead screw 6005 and motor 6006.
  • Control unit
  • 6088 changes the gap d between mega sonic device 6003 and wafer 6010 by moving chuck
  • FIG. 7 shows another embodiment of wafer cleaning apparatus using a mega sonic device according to the present invention.
  • the embodiment is similar to that shown in Fig. 4, except that mega sonic device 7003 is placed adjacently to the back side of wafer 7010, and is moved vertically by lead screw 7005 and motor 7006.
  • Control unit 7088 changes the gap d between mega sonic device 7003 and back side of wafer 7010 by moving mega sonic device
  • Nozzle 7011 supplies DI water or chemicals to maintain water film 7034 between mega sonic device 7003 and back side of wafer 7010.
  • the advantage of this embodiment is to reduce or eliminate a possible damage caused by mega sonic wave to device structure on front side of wafer 7010.
  • FIG. 8 shows another embodiment of wafer cleaning apparatus using a mega sonic device according to the present invention.
  • the embodiment is similar to that shown in Fig. 4, except that wafer 8010 is placed face down, and a nozzle array 8018 is placed underneath of front side of wafer 8010. Mega sonic wave is transmitted to front side of wafer 8010 through water film 8032 and wafer 8010 itself. A nozzle array 8018 sprays liquid chemicals or DI water on to front side of wafer 8010.
  • FIG. 9 shows another embodiment of wafer cleaning apparatus using a mega sonic device according to the present invention.
  • the embodiment is similar to that shown in Fig. 4, except that surface of piezoelectric transducer 9004 has an angle ⁇ to surface of wafer 9010.
  • Resonator 9008 is attached with piezoelectric transducer 9004, and mega sonic wave is transmitted to wafer through the resonator 9008 and DI water or chemical film 9032.
  • Process sequence 1, 2, and 3 can be applied here.
  • FIG. 1OA to 1OG show top view of mega sonic devices according to the present invention.
  • Mega sonic device shown in Fig.4 can be replaced by different shape of mega sonic devices 10003, i.e. triangle or pie shape as shown in Fig, 1OA, rectangle as shown in
  • Fig. 1OB octagon as shown in Fig. 1OC
  • elliptical as shown in Fig. 10D
  • half circle as shown in Fig. 1OE
  • quarter circle as shown in Fig. 1OF
  • circle as shown in Fig. 1OG.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L’invention concerne un procédé de nettoyage d’un substrat semi-conducteur au moyen d’un dispositif ultrasonique/mégasonique, consistant à maintenir un substrat semi-conducteur à l’aide d’une fixation, à positionner un dispositif ultrasonique/mégasonique adjacent au substrat semi-conducteur, à injecter un liquide chimique sur le substrat semi-conducteur et l’espace entre le substrat semi-conducteur et le dispositif ultrasonique/mégasonique, et à modifier l’espace entre le substrat semi-conducteur et le dispositif ultrasonique/mégasonique pour chaque rotation de la fixation pendant le processus de nettoyage. L’espace peut être augmenté ou réduit de 0,5 λ/N pour chaque rotation de la fixation, où λ est la longueur d’onde de l’onde ultrasonique/mégasonique et N est un nombre entier entre 2 et 1000. L’espace est modifié dans une plage de 0,5 λn pendant le processus de nettoyage, où λ est la longueur d’onde de l’onde ultrasonique/mégasonique et n est un nombre entier à partir de 1.
PCT/CN2008/073471 2008-12-12 2008-12-12 Procédé et appareil de nettoyage d’une plaquette semi-conductrice WO2010066081A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011539870A JP5367840B2 (ja) 2008-12-12 2008-12-12 半導体ウェーハの洗浄方法、および装置
SG2011042710A SG172096A1 (en) 2008-12-12 2008-12-12 Methods and apparatus for cleaning semiconductor wafers
KR1020117015974A KR101546660B1 (ko) 2008-12-12 2008-12-12 반도체 웨이퍼 세척 방법 및 장치
US13/133,826 US9595457B2 (en) 2008-12-12 2008-12-12 Methods and apparatus for cleaning semiconductor wafers
PCT/CN2008/073471 WO2010066081A1 (fr) 2008-12-12 2008-12-12 Procédé et appareil de nettoyage d’une plaquette semi-conductrice
US15/418,309 US10020208B2 (en) 2008-12-12 2017-01-27 Methods and apparatus for cleaning semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2008/073471 WO2010066081A1 (fr) 2008-12-12 2008-12-12 Procédé et appareil de nettoyage d’une plaquette semi-conductrice

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/133,826 A-371-Of-International US9595457B2 (en) 2008-12-12 2008-12-12 Methods and apparatus for cleaning semiconductor wafers
US15/418,309 Division US10020208B2 (en) 2008-12-12 2017-01-27 Methods and apparatus for cleaning semiconductor wafers

Publications (1)

Publication Number Publication Date
WO2010066081A1 true WO2010066081A1 (fr) 2010-06-17

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Country Status (5)

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US (2) US9595457B2 (fr)
JP (1) JP5367840B2 (fr)
KR (1) KR101546660B1 (fr)
SG (1) SG172096A1 (fr)
WO (1) WO2010066081A1 (fr)

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CN103084349A (zh) * 2011-11-03 2013-05-08 无锡华润上华科技有限公司 晶片清洗方法
CN103492092A (zh) * 2011-04-28 2014-01-01 朗姆研究公司 改进的超声处理方法和装置

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US11141762B2 (en) * 2015-05-15 2021-10-12 Acm Research (Shanghai), Inc. System for cleaning semiconductor wafers
CN106340470A (zh) * 2015-07-17 2017-01-18 盛美半导体设备（上海）有限公司 晶圆表面的清洗装置和清洗方法
US9885952B2 (en) * 2015-07-29 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of EUV mask cleaning
CN117046811A (zh) * 2015-12-09 2023-11-14 盛美半导体设备(上海)股份有限公司 使用高温化学品和超声波装置清洗衬底的方法和装置
KR102676133B1 (ko) * 2016-10-25 2024-06-19 에이씨엠 리서치 (상하이), 인코포레이티드 반도체 웨이퍼를 세정하는 장치 및 방법
JP7056969B2 (ja) * 2017-03-30 2022-04-19 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 基板洗浄装置
JP7055467B2 (ja) * 2017-09-08 2022-04-18 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 半導体ウェハの洗浄方法及び洗浄装置
JP6843402B2 (ja) * 2019-12-16 2021-03-17 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 基板洗浄方法
KR20230111334A (ko) 2022-01-18 2023-07-25 주식회사 일레븐전자 링 세척 시스템
KR20230111333A (ko) 2022-01-18 2023-07-25 주식회사 일레븐전자 링 세척 시스템
KR102694261B1 (ko) 2022-05-25 2024-08-12 주식회사 일레븐전자 링 회전유닛 및 이를 구비하는 링 세척장치

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JP2012511813A (ja) 2012-05-24
JP5367840B2 (ja) 2013-12-11
SG172096A1 (en) 2011-07-28
US20110290277A1 (en) 2011-12-01
US10020208B2 (en) 2018-07-10
US9595457B2 (en) 2017-03-14
KR20110091813A (ko) 2011-08-12
US20170140952A1 (en) 2017-05-18

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