WO2010061089A3 - Vitrage a zones concentrant la lumiere par echange ionique - Google Patents

Vitrage a zones concentrant la lumiere par echange ionique Download PDF

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Publication number
WO2010061089A3
WO2010061089A3 PCT/FR2009/052113 FR2009052113W WO2010061089A3 WO 2010061089 A3 WO2010061089 A3 WO 2010061089A3 FR 2009052113 W FR2009052113 W FR 2009052113W WO 2010061089 A3 WO2010061089 A3 WO 2010061089A3
Authority
WO
WIPO (PCT)
Prior art keywords
areas
free surface
index
glazing
ion exchange
Prior art date
Application number
PCT/FR2009/052113
Other languages
English (en)
Other versions
WO2010061089A2 (fr
Inventor
Guillaume Counil
Michele Schiavoni
Arnaud Huignard
Julien Sellier
Xavier Brajer
Original Assignee
Saint-Gobain Glass France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint-Gobain Glass France filed Critical Saint-Gobain Glass France
Priority to US13/127,377 priority Critical patent/US20110209761A1/en
Priority to EP09768127A priority patent/EP2353190A2/fr
Priority to EA201170639A priority patent/EA201170639A1/ru
Priority to CN2009801534516A priority patent/CN102272949A/zh
Priority to JP2011533799A priority patent/JP2012507458A/ja
Publication of WO2010061089A2 publication Critical patent/WO2010061089A2/fr
Publication of WO2010061089A3 publication Critical patent/WO2010061089A3/fr

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/04Prisms
    • G02B5/045Prism arrays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S23/00Arrangements for concentrating solar-rays for solar heat collectors
    • F24S23/10Prisms
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Ce verre minéral plat comprend une première surface libre et une deuxième surface libre, et comporte des groupes de zones à haut indice (n2) et bas indice (n1) de réfraction formées dans l'épaisseur du verre plat entre les première et deuxième surfaces libres, selon une profondeur comprise entre 1 et 1000 μm à partir de la première surface libre. Ces zones à haut indice et bas indice sont alternées selon une direction transversale à la direction d'épaisseur du verre entre les première et deuxième surfaces libres, les zones à haut indice de réfraction s 'évasant à partir de la première surface libre vers la deuxième surface libre, et les surfaces enveloppes des zones à haut indice formant un angle (θ) au moins égal à 65° par rapport à la première surface libre.
PCT/FR2009/052113 2008-11-03 2009-11-02 Vitrage a zones concentrant la lumiere par echange ionique WO2010061089A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/127,377 US20110209761A1 (en) 2008-11-03 2009-11-02 Glazing with light-concentrating zones by ion exchange
EP09768127A EP2353190A2 (fr) 2008-11-03 2009-11-02 Vitrage a zones concentrant la lumiere par echange ionique
EA201170639A EA201170639A1 (ru) 2008-11-03 2009-11-02 Стекло с зонами, концентрирующими свет за счет ионного обмена
CN2009801534516A CN102272949A (zh) 2008-11-03 2009-11-02 具有通过离子交换进行光集中的区域的玻璃门窗
JP2011533799A JP2012507458A (ja) 2008-11-03 2009-11-02 イオン交換による集光領域を備えた板ガラス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0857446 2008-11-03
FR0857446A FR2938078B1 (fr) 2008-11-03 2008-11-03 Vitrage a zones concentrant la lumiere par echange ionique.

Publications (2)

Publication Number Publication Date
WO2010061089A2 WO2010061089A2 (fr) 2010-06-03
WO2010061089A3 true WO2010061089A3 (fr) 2011-03-03

Family

ID=40740158

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2009/052113 WO2010061089A2 (fr) 2008-11-03 2009-11-02 Vitrage a zones concentrant la lumiere par echange ionique

Country Status (8)

Country Link
US (1) US20110209761A1 (fr)
EP (1) EP2353190A2 (fr)
JP (1) JP2012507458A (fr)
KR (1) KR20110096531A (fr)
CN (1) CN102272949A (fr)
EA (1) EA201170639A1 (fr)
FR (1) FR2938078B1 (fr)
WO (1) WO2010061089A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2948230B1 (fr) 2009-07-16 2011-10-21 Saint Gobain Plaque transparente texturee et procede de fabrication d'une telle plaque
US20160172521A1 (en) * 2013-07-18 2016-06-16 Corning Incorporated Solar concentrator with microreflectors
FR3042260A1 (fr) * 2015-10-13 2017-04-14 Sunpartner Technologies Panneau solaire photovoltaique dont la transparence varie en fonction de la position relative du soleil
US11563137B2 (en) 2019-09-16 2023-01-24 Meta Platforms Technologies, Llc Optical transformer
US11431236B2 (en) 2020-08-18 2022-08-30 Meta Platforms Technologies, Llc Dynamically addressable high voltage optical transformer with integrated optically triggered switches

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883522A (en) * 1987-08-19 1989-11-28 Integrated Solar Technologies Corp. Fabrication of macro-gradient optical density transmissive light concentrators, lenses and compound lenses of large geometry
US5703722A (en) * 1995-02-27 1997-12-30 Blankenbecler; Richard Segmented axial gradinet array lens
WO1999004296A1 (fr) * 1997-07-18 1999-01-28 Terrasun L.L.C. Dispositif de concentration du rayonnement optique
US5936777A (en) * 1996-10-31 1999-08-10 Lightpath Technologies, Inc. Axially-graded index-based couplers for solar concentrators
US20040150895A1 (en) * 2000-04-27 2004-08-05 Masahiro Yamada Optical device, optical system, method of production of same, and mold for production of same
EP1944808A1 (fr) * 2007-01-15 2008-07-16 Stmicroelectronics Sa Module optique imageur destiné à être associé à un composant semi-conducteur optique et procédé pour sa fabrication.

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US379852A (en) * 1888-03-20 Animal-releasing device
US392774A (en) * 1888-11-13 feankenbeeg
JPS58220106A (ja) * 1982-06-17 1983-12-21 Olympus Optical Co Ltd 固体撮像装置
JPS63291466A (ja) * 1987-05-25 1988-11-29 Nippon Sheet Glass Co Ltd 固体撮像装置
JPS6491101A (en) * 1987-10-01 1989-04-10 Nippon Sheet Glass Co Ltd Plane lens plate
DE3741477A1 (de) * 1987-12-08 1989-06-22 Fraunhofer Ges Forschung Konzentratoranordnung
JPH056988A (ja) * 1991-06-26 1993-01-14 Olympus Optical Co Ltd 固体撮像装置の製造方法
JP2770906B2 (ja) * 1995-09-08 1998-07-02 株式会社日立製作所 太陽電池モジュールおよびその製造方法
JPH11307803A (ja) * 1998-04-21 1999-11-05 Toyota Motor Corp 集光装置
JP2004186334A (ja) * 2002-12-02 2004-07-02 Sharp Corp 太陽電池、および太陽電池用集光素子とその製造方法
JP2004343020A (ja) * 2003-05-13 2004-12-02 Isao Katayama 受光素子
JP4226985B2 (ja) * 2003-10-06 2009-02-18 日本航空電子工業株式会社 光学センサの製造方法
US8039731B2 (en) 2005-06-06 2011-10-18 General Electric Company Photovoltaic concentrator for solar energy system
KR20080021652A (ko) 2005-06-06 2008-03-07 솔라리아 코포레이션 복수의 광발전 영역을 사용하는 통합된 솔라 셀 시스템 및방법
JP2008147395A (ja) * 2006-12-08 2008-06-26 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883522A (en) * 1987-08-19 1989-11-28 Integrated Solar Technologies Corp. Fabrication of macro-gradient optical density transmissive light concentrators, lenses and compound lenses of large geometry
US5703722A (en) * 1995-02-27 1997-12-30 Blankenbecler; Richard Segmented axial gradinet array lens
US5936777A (en) * 1996-10-31 1999-08-10 Lightpath Technologies, Inc. Axially-graded index-based couplers for solar concentrators
WO1999004296A1 (fr) * 1997-07-18 1999-01-28 Terrasun L.L.C. Dispositif de concentration du rayonnement optique
US20040150895A1 (en) * 2000-04-27 2004-08-05 Masahiro Yamada Optical device, optical system, method of production of same, and mold for production of same
EP1944808A1 (fr) * 2007-01-15 2008-07-16 Stmicroelectronics Sa Module optique imageur destiné à être associé à un composant semi-conducteur optique et procédé pour sa fabrication.

Also Published As

Publication number Publication date
WO2010061089A2 (fr) 2010-06-03
JP2012507458A (ja) 2012-03-29
EA201170639A1 (ru) 2011-10-31
US20110209761A1 (en) 2011-09-01
KR20110096531A (ko) 2011-08-30
EP2353190A2 (fr) 2011-08-10
CN102272949A (zh) 2011-12-07
FR2938078B1 (fr) 2011-02-11
FR2938078A1 (fr) 2010-05-07

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