WO2010053277A3 - X-선 노광을 이용한 미세 구조물 제조 방법 - Google Patents

X-선 노광을 이용한 미세 구조물 제조 방법 Download PDF

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Publication number
WO2010053277A3
WO2010053277A3 PCT/KR2009/006385 KR2009006385W WO2010053277A3 WO 2010053277 A3 WO2010053277 A3 WO 2010053277A3 KR 2009006385 W KR2009006385 W KR 2009006385W WO 2010053277 A3 WO2010053277 A3 WO 2010053277A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
micro structure
mold
ray exposure
formation step
Prior art date
Application number
PCT/KR2009/006385
Other languages
English (en)
French (fr)
Other versions
WO2010053277A2 (ko
Inventor
권태헌
이봉기
Original Assignee
포항공과대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 포항공과대학교 산학협력단 filed Critical 포항공과대학교 산학협력단
Priority to US13/128,016 priority Critical patent/US9217927B2/en
Priority to CN2009801446619A priority patent/CN102210008A/zh
Priority to EP20090824960 priority patent/EP2355136A4/en
Publication of WO2010053277A2 publication Critical patent/WO2010053277A2/ko
Publication of WO2010053277A3 publication Critical patent/WO2010053277A3/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/009—Manufacturing the stamps or the moulds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 입체적인 형상의 미세 패턴을 갖는 미세 구조물을 용이하게 형성할 수 있도록, X-마스크를 설치하고 X-선을 조사하여 측면 노광 방식으로 감광재를 노광하는 감광재 노광 단계와, 노광된 감광재를 에칭하는 감광재 에칭 단계와, 에칭된 감광재에 금속을 채워서 미체 패턴이 형성된 몰드를 제작하는 몰드 형성 단계와, 복수 개의 몰드를 결합시키는 몰드 모듈 형성 단계, 및 몰드 모듈을 이용하여, 미세 구조물을 성형하는 미세 구조물 성형 단계를 포함한다.
PCT/KR2009/006385 2008-11-07 2009-11-02 X-선 노광을 이용한 미세 구조물 제조 방법 WO2010053277A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/128,016 US9217927B2 (en) 2008-11-07 2009-11-02 Method for manufacturing micro structure using X-ray exposure
CN2009801446619A CN102210008A (zh) 2008-11-07 2009-11-02 利用x射线曝光的微细构造物的制造方法
EP20090824960 EP2355136A4 (en) 2008-11-07 2009-11-02 METHOD FOR MANUFACTURING MICRO STRUCTURE BY X-RAY EXPOSURE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0110582 2008-11-07
KR1020080110582A KR101020187B1 (ko) 2008-11-07 2008-11-07 Ｘ-선 노광을 이용한 미세 구조물 제조 방법

Publications (2)

Publication Number Publication Date
WO2010053277A2 WO2010053277A2 (ko) 2010-05-14
WO2010053277A3 true WO2010053277A3 (ko) 2010-08-05

Family

ID=42153377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006385 WO2010053277A2 (ko) 2008-11-07 2009-11-02 X-선 노광을 이용한 미세 구조물 제조 방법

Country Status (5)

Country Link
US (1) US9217927B2 (ko)
EP (1) EP2355136A4 (ko)
KR (1) KR101020187B1 (ko)
CN (1) CN102210008A (ko)
WO (1) WO2010053277A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113714393B (zh) * 2021-09-03 2024-02-02 广东安居宝数码科技股份有限公司 一种包边模具、使用方法及包边框

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020024352A (ko) * 2000-09-25 2002-03-30 김병수 새로운 가공기술 및 조립방식을 이용한 플라즈마디스플레이 패널 하판 격벽 성형용 금형 제작 방법
KR100451433B1 (ko) * 2001-10-12 2004-10-06 학교법인 포항공과대학교 리가 공정을 이용한 삼각 산맥 구조물과 그 성형틀 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273794A (ja) 2003-03-10 2004-09-30 Mitsubishi Electric Corp Ｘ線マスクの製造方法およびそれにより製造されたｘ線マスクを用いた半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020024352A (ko) * 2000-09-25 2002-03-30 김병수 새로운 가공기술 및 조립방식을 이용한 플라즈마디스플레이 패널 하판 격벽 성형용 금형 제작 방법
KR100451433B1 (ko) * 2001-10-12 2004-10-06 학교법인 포항공과대학교 리가 공정을 이용한 삼각 산맥 구조물과 그 성형틀 제조방법

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUPKA, R.K., APPLIED SURFACE SCIENCE, vol. 164, 31 December 2000 (2000-12-31), pages 97 - 110, XP008148307 *
See also references of EP2355136A4 *

Also Published As

Publication number Publication date
KR20100051418A (ko) 2010-05-17
CN102210008A (zh) 2011-10-05
EP2355136A2 (en) 2011-08-10
EP2355136A4 (en) 2013-01-23
US9217927B2 (en) 2015-12-22
WO2010053277A2 (ko) 2010-05-14
US20110254195A1 (en) 2011-10-20
KR101020187B1 (ko) 2011-03-07

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