WO2010038717A1 - Method for manufacturing functional device, and method for manufacturing semiconductor device provided with functional device - Google Patents

Abstract

A method for manufacturing a functional device is provided with a wafer processing step, a bonding step, a dicing step, a peeling step and a removing step.  In the wafer processing step, a functional thin film (2) is formed on one surface (3a) of a wafer (3) to be the base of a substrate (1).  In the bonding step after the wafer processing step, a protection sheet (6), i.e., an adhesive sheet using an adhesive, is directly bonded on the surface (3a) of the wafer (3), and a dicing sheet (7) is bonded on the other surface (3b) of the wafer (3).  In the dicing step after the bonding step, the protection sheet (6) and the wafer (3) are cut without cutting the dicing sheet (7), and the wafer (3) is divided into a plurality of functional devices (10).  In the peeling step after the dicing step, the protection sheet (6) is peeled from each functional device (10).  In the removing step after the peeling step, an organic material containing the adhesive of the protection sheet (6) adhered on each functional device (10) is removed.

Description

Method for manufacturing functional device and method for manufacturing semiconductor device provided with functional device

The present invention relates to a method for manufacturing a functional device and a method for manufacturing a semiconductor device provided with the functional device.

Conventionally, functional devices (functional devices) such as high-frequency devices, thermal infrared sensors, and MEMS (Micro Electro Mechanical Systems) devices (for example, acceleration sensors, gyro sensors, ultrasonic sensors, micro valves) have been provided.

Such a functional device includes a substrate and a functional thin film having a predetermined function and formed on the substrate. A cavity for spatially separating the substrate and the functional thin film is formed in the substrate.

In manufacturing a functional device, it is common to use a wafer (for example, a silicon wafer) that is the basis of a substrate. When a wafer is used, after the functional thin film is formed on one surface of the wafer, the wafer is divided into a plurality of functional devices by dicing.

The above functional thin film is relatively low in strength and fragile. Therefore, the functional thin film may be damaged during dicing. In particular, the functional thin film may be damaged during vacuum suction for fixing the wafer to the dicing stage or during pure spraying during dicing.

In view of these points, in the method for manufacturing a functional device disclosed in Document 1 (Japanese Published Patent Application No. 2004-186255), a protective layer is formed on one surface of the wafer and a dicing sheet is formed on the other surface of the wafer. The wafer is cut after being attached. The protective layer is removed after the wafer is cut. The document 1 discloses that an adhesive protective sheet is used instead of the protective layer.

In the method of manufacturing a functional device disclosed in Document 2 (Japanese Patent Publication No. 2005-197436), a resist film is formed on a wafer, a protective sheet is attached using the resist film, and then the wafer is cut. It is carried out. The protective sheet is removed by dissolving the resist film after cutting the wafer.

However, in the method for producing a functional device disclosed in Document 1, there is a possibility that a part of the protective layer or an adhesive of the protective sheet may remain on the surface of the functional device even after the protective layer and the protective sheet are removed. A part of the protective layer attached to the surface of the functional device or the adhesive of the protective sheet contributes to lowering the performance of the functional device.

In the functional device manufacturing method disclosed in Document 2, a resist is applied on a wafer by spin coating or the like and then thermally cured to form a resist film. For this reason, the resist film expands and contracts during thermal curing of the resist, and stress is applied to the functional thin film. As a result, the functional thin film may be destroyed. In addition, the functional device may be destroyed when the resist film is removed by wet etching, for example.

The present invention has been made in view of the above reasons. The objective of this invention is providing the manufacturing method of the functional device which can improve a yield, and can prevent the fall of the performance of the functional device by adhesion of organic substance, and the manufacturing method of the semiconductor device using a functional device.

A functional device manufactured by the method for manufacturing a functional device according to the present invention includes a substrate and a functional thin film having a predetermined function formed on the substrate. A cavity for spatially separating the substrate and the functional thin film is formed in the substrate.

The functional device manufacturing method according to the present invention includes a wafer processing step, a pasting step, a dicing step, a peeling step, and a removing step. In the wafer processing step, the functional thin film is formed on one surface of the wafer serving as the base of the substrate. In the sticking step, after the wafer processing step, a protective sheet, which is an adhesive sheet using an adhesive, is directly attached to one surface of the wafer, and a dicing sheet is attached to the other surface of the wafer. In the dicing step, after the attaching step, the protective sheet and the wafer are cut without cutting the dicing sheet, and the wafer is divided into a plurality of functional devices. In the peeling step, the protective sheet is peeled from each functional device after the dicing step. In the removal step, unnecessary organic matter including the pressure-sensitive adhesive on the protective sheet attached to each functional device is removed after the peeling step.

According to the present invention, since the wafer is cut using the protective sheet and the dicing sheet, the functional thin film can be prevented from being damaged during cutting, and the yield can be improved. Moreover, since unnecessary organic substances adhering to the functional device can be removed, it is possible to prevent the performance of the functional device from being deteriorated due to the adhesion of organic substances. Therefore, the performance of the functional device can be improved.

In particular, even if the pressure-sensitive adhesive adheres to the functional device after the peeling step, the pressure-sensitive adhesive can be reliably removed in the removal step. Therefore, deterioration of the performance of the functional device due to adhesion of the adhesive can be prevented.

Preferably, the functional device has a slit that penetrates the functional thin film in the thickness direction and communicates with the cavity. In the removing step, unnecessary organic substances attached to at least one of the inner surface of the slit and the inner surface of the cavity are removed.

In this way, since unnecessary organic substances adhering to the functional device can be removed, it is possible to prevent deterioration of the performance of the functional device due to the adhesion of organic substances. Therefore, the performance of the functional device can be improved.

Preferably, in the peeling step, a peeling member is attached to the surface of the protective sheet opposite to the wafer, and then the protective sheet is peeled from the functional device together with the peeling member.

In this way, cost can be reduced.

Preferably, the protective sheet is a heat-peelable pressure-sensitive adhesive sheet that uses a pressure-sensitive adhesive that decreases in adhesive strength when heated.

In this way, the protective sheet can be easily peeled from the functional device by heating the protective sheet. Therefore, it can suppress that the said functional thin film breaks at the time of peeling of the said protective sheet.

More preferably, in the peeling step, the protective sheet is uniformly heated while applying pressure uniformly to the entire surface of the protective sheet before peeling the protective sheet from the functional device.

If it does in this way, it can prevent that the said protective sheet will be parted at the time of peeling of the said protective sheet, and can peel the said protective sheet from the said functional thin film reliably.

A semiconductor device manufactured by the method for manufacturing a semiconductor device according to the present invention includes a functional device and a package that accommodates the functional device. The functional device includes a substrate and a functional thin film having a predetermined function formed on the substrate. A cavity for spatially separating the substrate and the functional thin film is formed in the substrate. The package includes a base on which the functional device is mounted and a cap that surrounds the functional device with the base.

The semiconductor device manufacturing method according to the present invention includes a wafer processing step, a pasting step, a dicing step, a peeling step, a removing step, a mounting step, and a sealing step. In the wafer processing step, the functional thin film is formed on one surface of the wafer serving as the base of the substrate. In the sticking step, after the wafer processing step, a protective sheet, which is an adhesive sheet using an adhesive, is directly attached to one surface of the wafer, and a dicing sheet is attached to the other surface of the wafer. In the dicing step, after the attaching step, the protective sheet and the wafer are cut without cutting the dicing sheet, and the wafer is divided into a plurality of functional devices. In the peeling step, the protective sheet is peeled from each functional device after the dicing step. In the removal step, unnecessary organic matter including the pressure-sensitive adhesive on the protective sheet attached to each functional device is removed after the peeling step. In the mounting step, after the dicing step, the functional device is mounted on the base using a first adhesive. In the sealing step, after the removing step and the mounting step, the cap is bonded to the base using a second adhesive, and the functional device is hermetically sealed with the package.

According to the present invention, since unnecessary organic substances adhering to the functional device can be removed, it is possible to prevent deterioration of the performance of the functional device due to the adhesion of organic substances. Therefore, it is possible to prevent the performance of the semiconductor device from being deteriorated.

Preferably, in the sealing step, the cap is bonded to the base body so that the inside of the package is in a vacuum or a positive pressure.

In this way, since unnecessary organic substances are removed from the functional device, the pressure in the package does not change due to degassing of the organic substances. Therefore, it is possible to prevent the performance of the semiconductor device from being deteriorated. In particular, if the inside of the package is evacuated, a change in the degree of vacuum in the package can be eliminated, and the reliability of the semiconductor device can be improved. Further, if the inside of the package is set to a positive pressure, gas outside the package such as the atmosphere does not flow into the package. Therefore, the reliability of the semiconductor device can be improved.

More preferably, at least one of the first adhesive and the second adhesive is made of an inorganic material.

In this way, even when the package is hermetically sealed, changes in internal pressure due to degassing from the first adhesive and the second adhesive can be eliminated.

Preferably, before the sealing step, organic substances attached to at least one of the base and the cap are removed.

In this way, it is possible to prevent the performance of the semiconductor device from being deteriorated.

Preferably, the mounting step is performed before the removing step. In the removing step, organic substances attached to the substrate are removed.

In this way, after the functional device is mounted on the base, unnecessary organic matter of the functional device and unnecessary organic matter of the base can be removed simultaneously. Therefore, it is possible to prevent the performance of the semiconductor device from being deteriorated and to improve the yield.

It is process drawing of the manufacturing method of the functional device of one Embodiment of this invention. The functional device same as the above is shown, (a) is a schematic plan view, (b) is an equivalent circuit diagram. The functional device is shown, in which (a) is an enlarged view and (b) is a cross-sectional view taken along the line AA in FIG. It is explanatory drawing of the manufacturing method of a functional device same as the above. It is process drawing of the manufacturing method of the semiconductor device of one Embodiment of this invention. It is a schematic plan view of a semiconductor device provided with a functional device same as the above. It is explanatory drawing of a semiconductor device same as the above.

(Embodiment 1)
2 and 3 show a functional device 10 manufactured by the functional device manufacturing method of the present embodiment.

The functional device 10 is an infrared array sensor (infrared image sensor). The functional device 10 includes a substrate 1 and a functional thin film 2 having a predetermined function and formed on the substrate 1.

The substrate 1 is a silicon substrate. A functional thin film 2 is formed on the main surface (the upper surface in FIG. 1E) that is one surface in the thickness direction of the substrate 1.

2, the functional thin film 2 includes m × n (2 × 2 in the illustrated example) functional elements 30 arranged in a two-dimensional array. Note that the functional thin film 2 may include only one functional element 30.

The functional element 30 is a thermal infrared detecting element having a thermocouple type sensing element 20 made of a thermopile. The functional element 30 functions as a photoelectric conversion element of a pixel in the infrared image sensor. In FIG. 2B, the sensing element 20 is illustrated as a voltage source corresponding to the thermoelectromotive force of the sensing element 20.

Here, the substrate 1 has a cavity 5 for spatially separating the substrate 1 and the functional thin film 2. The cavity 5 thermally separates the functional element 30 of the functional thin film 2 and the substrate 1. Thereby, the sensitivity of the functional element 30 which is an infrared detection element can be improved. In the illustrated example, the cavity 5 is a depression formed in the substrate 1. The cavity 5 may be a hole that penetrates the substrate 1 in the thickness direction.

Part of the functional element 30 (part of the functional thin film 2) is spatially separated from the substrate 1 by the cavity 5, as shown in FIG. A portion of the functional element 30 that is spatially separated from the substrate 1 constitutes an infrared absorber 21 that absorbs infrared rays. Slits (through holes) 4 that penetrate the functional element 30 in the thickness direction are formed at the four corners of the rectangular region that becomes the infrared absorber 21. The slit 4 communicates with the cavity 5. By forming such a slit 4, the infrared absorber 21 and the substrate 1 can be thermally separated. Therefore, the sensitivity of the functional element 30 that is an infrared detection element can be improved. Note that the shape of the slit 4 is not limited to a rectangle, but can be variously selected as desired, such as a triangle, an ellipse, and a circle.

As shown in FIG. 3B, the functional element 30 is a laminated structure including a silicon oxide film 11, a silicon nitride film 12, a sensing element 20, an interlayer insulating film 17, and a passivation film 19. It is formed by patterning. The functional element 30 formed by such a laminated structure is sufficiently thinner than the substrate 1.

The silicon oxide film 11 is formed on the main surface of the substrate 1. The silicon nitride film 12 is formed on the silicon oxide film 11. The sensing element 20 is formed on the silicon nitride film 12. The interlayer insulating film 17 is formed so as to cover the sensing element 20 on the surface side of the silicon nitride film 12 (upper surface side in FIG. 3B). The interlayer insulating film 17 is, for example, a BPSG (Boro-PhosphoSilicate Glass) film. The passivation film 19 is formed on the interlayer insulating film 17. The passivation film 19 is, for example, a laminated film of a PSG (Phospho SilicateGlass) film and an NSG (Non-doped Silicate Glass) film formed on the PSG film.

In the functional device 10, the laminated film of the interlayer insulating film 17 and the passivation film 19 constitutes an infrared absorption film 22. The thickness t of the infrared absorption film 22 is λ / 4n. Here, n is the refractive index of the infrared absorption film 22, and λ is the center wavelength of the infrared rays to be detected (for example, infrared rays emitted from a human body having a wavelength of 8 to 12 μm). If it does in this way, the absorption efficiency of the infrared absorption film 22 with respect to the infrared rays to be detected can be increased. For example, when n = 1.4 and λ = 10 μm, t≈1.8 μm may be set. In this case, the thickness of the interlayer insulating film 17 may be 0.8 μm, the thickness of the PSG film may be 0.5 μm, and the thickness of the NSG film may be 0.5 μm. Note that the passivation film 19 may be a silicon nitride film.

The sensing element 20 includes four thermocouples 200 connected in series as shown in FIG. Each thermocouple 200 includes a p-type polysilicon layer 15, an n-type polysilicon layer 13, and a connection layer 23. The p-type polysilicon layer 15 and the n-type polysilicon layer 13 are formed so as to straddle the infrared absorber 21 and the substrate 1. The p-type polysilicon layer 15 and the n-type polysilicon layer 13 are formed so as not to contact each other. The connection layer 23 has a p-type polysilicon layer 15 and an n-type polysilicon layer 13 on the infrared incident surface side (upper surface side in FIG. 3B) which is the surface opposite to the substrate 1 side in the infrared absorber 21. Are electrically connected. The connection layer 23 is made of a metal material such as Al—Si. Connection layer 23 is electrically connected to each of n-type polysilicon layer 13 and p-type polysilicon layer 15 through contact holes 25 formed in interlayer insulating film 17.

The other end of the p-type polysilicon layer 15 of the thermocouple 200 is electrically connected to the other end of the n-type polysilicon layer 13 of the adjacent thermocouple by a wiring 18 on the main surface side of the substrate 1. The wiring 18 is formed of a metal material such as Al—Si, for example. The four thermocouples 200 are connected in series by the wiring 18 to form a sensing element 20 made of a thermopile. The sensing element 20 has a hot junction disposed on the infrared absorber 21 and a cold junction disposed on the substrate 1. The hot junction is composed of one end of the n-type polysilicon layer 13, one end of the p-type polysilicon layer 15, and the connection layer 23. The cold junction is composed of the other end of the p-type polysilicon layer 15, the other end of the n-type polysilicon layer 13, and the wiring 18.

The functional thin film 2 includes a plurality (four in the illustrated example) of output pads 24 (241 to 244) and one reference bias pad 26 as shown in FIG. One end of each sensing element 20 is electrically connected to a corresponding output pad 24 via a vertical readout line 27. Further, the other end of each sensing element 20 is electrically connected to a common reference bias line 29 via a reference bias line 28. The common reference bias line 29 is electrically connected to the reference bias pad 26. That is, one end of each sensing element 20 is connected to each output pad 24 separately. The other ends of the plurality of sensing elements 20 are commonly connected to the reference bias pad 26.

In this functional device 10, for example, by setting the potential of the reference bias pad 26 to 1.65 V, the output voltage of the functional element 30 (1.65 V + the output voltage of the sensing element 20) is extracted from each output pad 24. be able to.

The n-type compensating polysilicon layer 14 and the p-type compensating polysilicon layer 16 are formed on the infrared incident surface of the infrared absorber 21. The n-type compensation polysilicon layer 14 and the p-type compensation polysilicon layer 16 are arranged so as not to contact each other. The n-type compensation polysilicon layer 14 is formed integrally with the n-type polysilicon layer 13. That is, a portion that becomes the n-type compensation polysilicon layer 14 is left when the n-type polysilicon layer 13 is patterned. The p-type compensation polysilicon layer 16 is formed integrally with the p-type polysilicon layer 15. That is, a portion that becomes the p-type compensation polysilicon layer 16 is left when the p-type polysilicon layer 15 is patterned.

Such n-type compensation polysilicon layer 14 and p-type compensation polysilicon layer 16 enhance the uniformity of the stress balance of the functional element 30. As a result, it is possible to prevent warping while reducing the thickness of the functional element 30. Thereby, the sensitivity of the functional element 30 which is an infrared detection element can be improved.

Next, a method for manufacturing a functional device according to this embodiment will be described with reference to FIGS.

The manufacturing method of the functional device includes a wafer processing step (pre-process) and a division step (post-process) performed after the wafer processing step.

In the wafer processing step, the functional thin film 2 is formed on one surface of the wafer 3 which is the basis of the substrate 1. Through the wafer processing step, a wafer 3 having a substrate 1 and a functional thin film 2 is obtained as shown in FIG. A plurality of functional devices 10 are formed on one surface (one surface in the thickness direction) 3 a of the wafer 3. In the present embodiment, one surface 3a of the wafer 3 is a surface opposite to the substrate 1 side in the functional thin film 2 (an upper surface in FIG. 1A). The other surface (the other surface in the thickness direction) 3b of the wafer 3 is the other surface in the thickness direction of the substrate 1 (the lower surface in FIG. 1A).

The method for manufacturing a functional device according to this embodiment is characterized by a division process. Therefore, the wafer processing process is appropriately changed according to the configuration of the functional device 10.

Hereinafter, an example of a wafer processing process when the functional device 10 is an infrared sensor will be briefly described.

In the wafer processing process, an insulating layer forming process is first performed. In the insulating layer forming step, an insulating layer (thermal insulating layer) is formed on the main surface of the substrate 1. The insulating layer is a laminated film of a silicon oxide film 11 having a predetermined film thickness (for example, 3000 mm) and a silicon nitride film 12 having a predetermined film thickness (for example, 900 mm). Silicon oxide film 11 is formed by thermally oxidizing the main surface of substrate 1 at a predetermined temperature (for example, 1100 ° C.). The silicon nitride film 12 is formed by the LPCVD method.

After the insulating layer forming step, a polysilicon layer forming step is performed. In the polysilicon layer forming step, a non-doped polysilicon layer having a predetermined film thickness (for example, 0.69 μm) is formed on the entire surface of the main surface of the substrate 1 by LPCVD. This non-doped polysilicon layer is the basis of the n-type polysilicon layer 13, the n-type compensation polysilicon layer 14, the p-type polysilicon layer 15, and the p-type compensation polysilicon layer 16.

After the polysilicon layer forming step, a polysilicon layer patterning step is performed. In the polysilicon layer patterning step, the n-type polysilicon layer 13, the n-type compensation polysilicon layer 14, the p-type polysilicon layer 15, and the p-type compensation polycrystal among the non-doped polysilicon layers using the photolithography technique and the etching technique. The non-doped polysilicon layer is patterned so that a portion corresponding to the silicon layer 16 remains.

After the polysilicon layer patterning step, a p-type polysilicon layer forming step is performed. In the p-type polysilicon layer forming step, ions of p-type impurities (for example, boron) are implanted into portions of the non-doped polysilicon layer corresponding to the p-type polysilicon layer 15 and the p-type compensation polysilicon layer 16. Then, the p-type polysilicon layer 15 and the p-type compensation polysilicon layer 16 are formed.

After the p-type polysilicon layer forming step, an n-type polysilicon layer forming step is performed. In the n-type polysilicon forming step, after ion implantation of an n-type impurity (for example, phosphorus) is performed on the portion of the non-doped polysilicon layer corresponding to the n-type polysilicon layer 13 and the n-type compensating polysilicon layer 14. The n-type polysilicon layer 13 and the n-type compensation polysilicon layer 14 are formed by driving. The order of the p-type polysilicon layer forming step and the n-type polysilicon layer forming step may be reversed.

After completing the p-type polysilicon layer forming step and the n-type polysilicon layer forming step, an interlayer insulating film forming step is performed. In the interlayer insulating film forming step, an interlayer insulating film 17 is formed on the main surface of the substrate 1.

After the interlayer insulating film forming step, a contact hole forming step is performed. In the contact hole forming step, a contact hole 25 is formed in the interlayer insulating film 17 by using a photolithography technique and an etching technique.

After the contact hole forming process, a metal film forming process is performed. In the metal film forming step, a metal film (for example, an Al—Si film) having a predetermined film thickness (for example, 2 μm) is formed on the entire surface of the main surface of the substrate 1 by a sputtering method or the like. This metal film is the basis of the connection layer 23, the wiring 18, the vertical readout line 27, the reference bias line 28, the common reference bias line 29, and the pads 24 and 26.

After the metal film forming process, a metal film patterning process is performed. In the metal film patterning step, the metal film is patterned using a photolithography technique and an etching technique, so that the connection layer 23, the wiring 18, the vertical readout line 27, the reference bias line 28, the common reference bias line 29, and each pad 24. , 26 are formed.

After the metal film patterning process, a passivation film forming process is performed. In the passivation film forming step, a PSG film having a predetermined film thickness (for example, 5000 mm) and an NSG film having a predetermined film thickness (for example, 5000 mm) are formed on the main surface of the substrate 1 (that is, on the surface of the interlayer insulating film 17). A passivation film 19 made of a laminated film is formed by a CVD method.

After the passivation film forming step, a laminated structure patterning step is performed. In the laminated structure patterning step, the functional thin film 2 is formed by patterning the laminated structure described above. Specifically, in the laminated structure patterning step, the functional thin film 2 is obtained by forming the slits 4.

After the laminated structure patterning step, an opening forming step is performed. In the opening forming process, openings (not shown) for exposing the pads 24 and 26 are formed by using a photolithography technique and an etching technique. In the opening forming process, RIE is used.

After the opening forming process, a cavity forming process is performed. In the cavity forming step, the cavity 5 is formed in the substrate 1 by anisotropically etching the substrate 1 by introducing the etchant using the slits 4 as the etchant introduction holes. As a result, as shown in FIG. 2, the functional device 10 in which the functional elements 30 are arranged in a two-dimensional array is obtained. In the cavity forming step, a TMAH solution heated to a predetermined temperature (for example, 85 ° C.) is used as an etching solution. The etching solution is not limited to the TMAH solution, but may be another alkaline solution (for example, a KOH solution).

The dividing step includes a sticking step, a dicing step, a peeling step, a removing step, and a separating step. In the dividing step, the pasting step is first performed.

In the attaching step, the dicing sheet 7 is attached to the other surface 3b of the wafer 3. In the present embodiment, the dicing sheet 7 is directly attached to the other surface 3 b of the wafer 3. Thereafter, a protective sheet 6 for protecting the functional thin film 2 is directly attached to one surface 3 a of the wafer 3. As a result, the structure shown in FIG. The order in which the protective sheet 6 and the dicing sheet 7 are attached is not particularly limited. The functional thin film 2 can be protected more quickly by attaching the protective sheet 6 to the wafer 3 before the dicing sheet 7.

The protective sheet (temporary fixing sheet) 6 temporarily fixes the functional thin film 2 and protects it. The protective sheet 6 is a pressure-sensitive adhesive sheet (adhesive sheet) using a pressure-sensitive adhesive (adhesive). Such an adhesive sheet is formed, for example, by applying an adhesive to the surface of a sheet-like or tape-like substrate such as plastic or polyester having a thickness of about 1 to 500 μm. In particular, as the protective sheet 6, it is preferable to use a pressure-sensitive adhesive sheet that can protect the functional thin film 2 from the cutting stress during dicing of the wafer 3 and the stress generated by cooling and cleaning and does not interfere with the cutting of the wafer 3.

As the protective sheet 6, it is preferable to use an ultraviolet peelable adhesive sheet, a water-soluble peelable adhesive sheet, or a heat peelable adhesive sheet. The ultraviolet peelable pressure-sensitive adhesive sheet is a pressure-sensitive adhesive sheet that uses a pressure-sensitive adhesive whose adhesive strength decreases when irradiated with ultraviolet rays. The water-soluble peelable pressure-sensitive adhesive sheet is a pressure-sensitive adhesive sheet that uses a pressure-sensitive adhesive whose adhesive strength decreases when immersed in an aqueous solution. The heat-peelable pressure-sensitive adhesive sheet is a pressure-sensitive adhesive sheet using a pressure-sensitive adhesive whose adhesive strength is reduced by heating.

Here, considering mass productivity, it is preferable that the adhesive force can be reduced in a short time. From this viewpoint, it is preferable to use a heat-peelable pressure-sensitive adhesive sheet or a UV-peelable pressure-sensitive adhesive sheet rather than a water-soluble peelable pressure-sensitive adhesive sheet. Moreover, when peeling a water-soluble peeling type adhesive sheet, it is necessary to immerse the functional device 10 with the protective sheet 6 in aqueous solution, and there exists a possibility that the characteristic of the functional thin film 2 of the functional device 10 may deteriorate by this.

Also, considering the adhesive strength after processing, the residual adhesive strength of the heat-peelable pressure-sensitive adhesive sheet is lower than that of the UV-peelable pressure-sensitive adhesive sheet. Therefore, if the heat-peelable pressure-sensitive adhesive sheet is used, the protective sheet 6 can be easily peeled without damaging the functional thin film 2. In particular, the yield of the functional device 10 having the cavity 5 and the slit 4 communicating with the cavity 5 can be improved.

Examples of such heat-peelable pressure-sensitive adhesive sheets include pressure-sensitive adhesives containing thermally expandable fine particles (for example, rubber pressure-sensitive adhesives, acrylic pressure-sensitive adhesives, vinyl alkyl ether pressure-sensitive adhesives, silicone-based pressure-sensitive adhesives, and polyester-based pressure-sensitive adhesives). A pressure-sensitive adhesive sheet using a polyamide-based pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, or a fluorine-based pressure-sensitive adhesive) can be used. As the thermally expandable fine particles, for example, a microcapsule in which a substance (for example, isobutane, propane, or pentane) that is easily gasified by heating and encapsulated in an elastic shell can be used.

When affixing the protective sheet 6 to the one surface 3a of the wafer 3, the protective sheet 6 is disposed on the one surface 3a of the wafer 3, and the protective sheet 6 is attached to the wafer using an instrument such as a rubber roller, a spatula, or a press. 3 may be pressed against one surface 3a. When an adhesive sheet using a tape-like base material is used as the protective sheet 6, the protective sheet 6 may be attached to the wafer 3 using a roll-to-roll method. .

In the dicing process, after the attaching process, the protective sheet 6 and the wafer 3 are cut without cutting the dicing sheet 7 and the wafer 3 is divided into a plurality of functional devices 10.

First, in the dicing process, wafer mounting for fixing the wafer 3 to a flat ring (not shown) is performed. The wafer 3 and the flat ring are fixed by a normal method using a dicing sheet 7. Therefore, the wafer 3 is fixed to the flat ring at the other surface 3b. After the wafer mounting, the flat ring on which the wafer 3 is fixed is fixed to a dicing stage (not shown) of the dicing apparatus. For example, the flat ring is fixed to the dicing stage by vacuum suction.

After fixing the flat ring to the dicing stage, the wafer 3 is cut from the protective sheet 6 side (one surface 3a side). Specifically, the wafer 3 is cut together with the protective sheet 6 along a street on the wafer 3 using a dicing blade (not shown). Dicing is performed with a full cut instead of a half cut. As a result, the structure shown in FIG. After the dicing process, the wafer 3 is divided into a plurality of functional devices 10 by grooves (dicing grooves) 8. That is, the wafer 3 is chipped. The plurality of functional devices 10 are fixed to the dicing sheet 7. A divided protective sheet 6 is attached to the functional thin film 2 of each functional device 10.

In the dicing process, for example, a dicing blade having a thickness of several tens of μm is used. At the time of dicing, the dicing blade is rotated at a high speed of about 3000 to 4000 rpm. In addition, in order to cool the dicing blade and remove the cutting waste, cleaning water is sprayed during dicing. After the wafer 3 is cut, the flat ring is removed from the dicing apparatus. In addition, what is necessary is just to select suitably by the material and structure of the functional device 10 whether full cut or half cut is carried out.

In the peeling step (protective sheet peeling step), the protective sheet 6 is peeled from each functional device 10 after the dicing step. For example, when a heat-peelable adhesive sheet is used as the protective sheet 6, a heat treatment is performed in which the protective sheet 6 of each functional device 10 is heated with a heater (for example, a hot air dryer, a hot plate, or a near infrared lamp). . In particular, in the peeling process in the present embodiment, the protective sheet 6 is peeled off using the peeling member 9. The peeling member 9 is, for example, a heating plate having a metal plate excellent in thermal conductivity and a heater built in the metal plate and heating the metal plate. The metal plate of the peeling member 9 is formed with a plurality of pores (not shown) for sucking and fixing the protective sheet 6.

In the peeling step in the present embodiment, as shown in FIG. 1C, first, a peeling member 9 is attached to the surface of the protective sheet 6 opposite to the wafer 3 (upper surface in FIG. 1C). Next, the protective sheet 6 is uniformly heated while uniformly applying pressure to the entire surface of the protective sheet 6 by the peeling member 9. For example, the protective sheet 6 is heated at 120 ° C. for 1 minute.

When the protective sheet 6 is heated by the peeling member 9, the thermally expandable fine particles in the adhesive of the protective sheet 6 are greatly expanded. Thereby, minute unevenness is generated on the surface of the layer made of the adhesive, and the state changes from the state in which the protective sheet 6 and the functional thin film 2 are in contact with each other to the point. As a result, the contact area between the protective sheet 6 and the functional thin film 2 is reduced, and the adhesive strength of the protective sheet 6 is greatly reduced.

In this manner, the protective sheet 6 is peeled from the functional device 10 together with the peeling member 9 in a state in which the protective sheet 6 is heated by the peeling member 9 to reduce the adhesive force. For example, the protective sheet 6 is sucked and fixed using the pores of the peeling member 9. Next, the protective sheet 6 is lifted together with the peeling member 9. Thus, the protective sheet 6 is peeled from the functional device 10 together with the peeling member 9. By this peeling step, as shown in FIG. 10D, the protective sheet 6 can be peeled relatively easily without destroying the functional device 10 (particularly the functional thin film 2).

In addition, when an ultraviolet peeling type adhesive sheet is used for the protective sheet 6, an ultraviolet irradiation process for irradiating the protective sheet 6 with ultraviolet rays is performed instead of the heat treatment. Moreover, when a water-soluble peeling type adhesive sheet is used for the protective sheet 6, the aqueous solution injection process which immerses the protective sheet 6 in predetermined | prescribed aqueous solution is performed instead of heat processing. If it does in this way, the protection sheet 6 can be peeled easily.

In the removing process, unnecessary organic substances attached to each functional device 10 are removed after the peeling process. Here, unnecessary organic substances are organic contaminants such as photoresist, resin, silicon oil, and flux. In particular, in the case of the present embodiment, the organic material includes the adhesive of the protective sheet 6 (the adhesive of the protective sheet 6 attached to the surface of the functional thin film 2).

Such unnecessary organic substances including the adhesive of the protective sheet 6 can be removed by, for example, ozone. Ozone can be generated by irradiating oxygen gas with ultraviolet rays or high-frequency microwaves.

For example, in the removal step in the present embodiment, dry treatment using an ultraviolet ozone cleaning method (UV ozone cleaning method) is performed. In the removal step, a wet process for removing organic substances (organic contaminants) using ozone water can be used.

The ultraviolet ozone cleaning method is a method of removing unnecessary organic substances by irradiating unnecessary organic substances with short wavelength ultraviolet rays. Such an ultraviolet ozone cleaning method is a photosensitive oxidation process using ultraviolet rays having a short wavelength. Unnecessary organic matter is decomposed by absorbing short wavelength ultraviolet rays. As the short wavelength ultraviolet light, ultraviolet light having a wavelength of 184.9 nm and ultraviolet light having a wavelength of 253.7 nm are used. When oxygen molecules are irradiated with ultraviolet rays of 184.9 nm, the oxygen molecules become ozone. When ozone is irradiated with ultraviolet rays having a wavelength of 253.7 nm, the ozone is decomposed and simultaneously generates active oxygen. Most of the UV at 253.7 nm is absorbed by hydrocarbons and ozone. A product generated by decomposing organic substances by ultraviolet rays reacts with active oxygen to become volatile molecules, and is detached from the functional device 10. By irradiating ultraviolet rays with both wavelengths of 184.9 nm and 253.7 nm, oxygen elements continue to be generated, oxygen molecules become ozone, and ozone is decomposed.

In such an ultraviolet ozone cleaning method, the functional device 10 is sealed in the casing of the sealing processing apparatus. The casing of the hermetic treatment apparatus is provided with a low-pressure mercury lamp that emits, for example, 185 nm ultraviolet light and 254 nm ultraviolet light. Oxygen (O ₂ gas) is exhausted while flowing at 1 to 20 L / min (for example, 5 L / min) in the casing of the hermetic treatment apparatus. As a result, the pressure in the casing of the hermetic treatment apparatus is maintained at normal pressure. Moreover, it is preferable to set the temperature in the housing of the hermetic treatment apparatus between room temperature and 350 ° C. (for example, 150 ° C.). The treatment time for performing the ultraviolet ozone cleaning is appropriately set between 1 and 120 minutes.

Incidentally, in the removing step, the protective sheet 6 has already been peeled off in the peeling step before the removing step. Therefore, in the removal step, unnecessary organic substances attached to both the inner surface of the slit 4 and the inner surface of the cavity 5 are also removed together. Thus, in the removal step, it is preferable to remove unnecessary organic substances attached to at least one of the inner surface of the slit 4 and the inner surface of the cavity 5. Further, it is more preferable to remove unnecessary organic substances attached to both the inner surface of the slit 4 and the inner surface of the cavity 5. That is, in the removal step, it is preferable to perform a process capable of removing both unnecessary organic substances that may adhere to the inner surface of the slit 4 and unnecessary organic substances that may adhere to the inner surface of the cavity 5.

In the removing step, the functional device 10 may be further subjected to an ashing process that etches the photosensitive organic resist. In performing the ashing process, first, the functional device 10 is placed on a wafer holder in a chamber of an ashing apparatus (not shown). Next, oxygen is exhausted into the chamber while flowing oxygen at a standard state of 1 to 1000 cc / min (sccm) (for example, 2 cc / min (sccm)), and the pressure in the chamber is set to 13 to 266 Pa (for example, 104 Pa). . Next, the temperature of the wafer holder is stabilized at room temperature to 250 ° C. (for example, 180 ° C.). Then, ashing is performed by supplying RF power at 100 to 1 KW (for example, 450 W) for 1 to 120 minutes (for example, 60 minutes).

After the peeling step, a separation step (dicing sheet peeling step) is performed. In the separation step, the chip (functional device 10) is separated from the dicing sheet 7 using, for example, a chip bonder. As a result, as shown in FIG. 1E, a plurality of functional devices 10 divided individually can be obtained. Therefore, each functional device 10 can be used for the semiconductor device 100 (see FIG. 6) and the like.

The functional device manufacturing method described above includes a wafer processing step, a pasting step, a dicing step, a peeling step, and a removing step. In the wafer processing step, the functional thin film 2 is formed on the one surface 3a of the wafer 3 that is the basis of the substrate 1. In the sticking step, after the wafer processing step, the protective sheet 6 which is an adhesive sheet using an adhesive is directly attached to the one surface 3a of the wafer 3, and the dicing sheet 7 is attached to the other surface 3b of the wafer 3. . In the dicing process, after the attaching process, the protective sheet 6 and the wafer 3 are cut without cutting the dicing sheet 7 and the wafer 3 is divided into a plurality of functional devices 10. In the peeling step, the protective sheet 6 is peeled from each functional device 10 after the dicing step. In the removing step, the adhesive of the protective sheet 6 that is an unnecessary organic substance attached to each functional device 10 is removed after the peeling step.

According to this method of manufacturing a functional device, the wafer 3 is cut using the protective sheet 6 and the dicing sheet 7, so that the functional thin film 2 can be prevented from being damaged at the time of cutting, and the yield can be improved. Moreover, since the adhesive of the protective sheet 6 which is an unnecessary organic substance adhering to the functional device 10 can be removed, the deterioration of the performance of the functional device 10 due to the adhesion of the organic substance can be prevented. In particular, when the functional device 10 is an infrared sensor, it is possible to prevent changes in thermal characteristics due to adhesion of the adhesive on the protective sheet 6. Therefore, it is possible to prevent a decrease in sensitivity of the infrared sensor. Furthermore, a plurality of infrared sensors have uniform sensor characteristics.

In the removing step, unnecessary organic substances attached to at least one of the inner surface of the slit 4 and the inner surface of the cavity 5 are removed. Therefore, unnecessary organic substances attached to the inner surfaces of the slits 4 and the cavities 5 of the functional device 10 can be removed, so that the performance of the functional device 10 can be prevented from being deteriorated due to the adhesion of organic substances. Therefore, the performance of the functional device 10 can be improved.

In the peeling step, the peeling member 9 is attached to the surface of the protective sheet 6 opposite to the wafer 3, and then the protective sheet 6 is peeled from the functional device 10 together with the peeling member 9. Therefore, cost reduction can be achieved.

The protective sheet 6 is a heat-peelable pressure-sensitive adhesive sheet that uses a pressure-sensitive adhesive whose adhesive strength decreases when heated. Therefore, the protective sheet 6 can be easily peeled from the functional device 10 by heating the protective sheet 6. Therefore, it is possible to suppress the functional thin film 2 from being damaged when the protective sheet 6 is peeled off.

Furthermore, in the peeling step, the protective sheet 6 is uniformly heated while applying pressure uniformly to the entire surface of the protective sheet 6 before the protective sheet 6 is peeled from the functional device 10. Therefore, it can prevent that the protection sheet 6 will be parted at the time of peeling of the protection sheet 6. FIG. Therefore, the protective sheet 6 can be reliably peeled from the functional thin film 2.

The functional device 10 is not limited to the infrared array sensor described above. The functional device 10 may be, for example, an acceleration sensor (1-axis to 3-axis acceleration sensor), a gyro sensor, a pressure sensor, a micro actuator, a microphone, or an ultrasonic sensor.

(Embodiment 2)
FIG. 6 shows a semiconductor device 100 manufactured by the semiconductor device manufacturing method of the present embodiment. The semiconductor device 100 includes a functional device 10 and a signal processing device 33 made of an IC chip. Further, as shown in FIG. 5C, the semiconductor device 100 includes a package 40 that houses the functional device 10 and the signal processing device 33.

The signal processing device 33 is configured to cooperate with the functional device 10 which is an infrared sensor. The signal processing device 33 includes a plurality (four in the illustrated example) of input pads 31 (311 to 314) and one pad 32. A plurality (four in the illustrated example) of output pads 241 to 244 of the functional device 10 are electrically connected to the input pads 311 to 314 via wirings 35, respectively. The pad 32 is used to apply a reference voltage to the reference bias pad 26 of the functional device 10. The pad 32 is electrically connected to the reference bias pad 26 via the wiring 35. The wiring 35 is, for example, a bonding wire using gold or aluminum.

The signal processing device 33 further includes an amplifier circuit 42 that amplifies the output voltage of the input pad 31 and a multiplexer 41 that alternatively inputs the output voltages of the plurality of input pads 31 to the amplifier circuit 42.

The signal processing device 33 is configured to sequentially output the output voltage from each output pad 24 of the functional device 10. If the signal processing device 33 is used, an infrared image can be obtained. The signal processing apparatus 33 is formed separately from the functional device 10, but may be formed using the substrate 1 of the functional device 10. That is, the signal processing device 33 may be integrally provided in the functional device 10.

The package 40 includes a metal base 36 on which the functional device 10 and the signal processing device 33 are mounted, and a cap 39 that surrounds the functional device 10 and the signal processing device 33 with the base 36. The base 36 is formed in a rectangular box shape having an opening on one surface (upper surface). The functional device 10 and the signal processing device 33 are mounted on the inner bottom surface of the base body 36. The cap 39 is formed in a rectangular plate size that can close the opening of the base 36. When the functional device 10 is an infrared sensor, a material (for example, silicon) that can transmit infrared rays is used as the material of the cap 39. In addition, when the functional device 10 is a visible light sensor, the material (for example, glass) which has translucency with respect to visible light is used for the material of the cap 39. FIG. Further, when the functional device 10 is an acceleration sensor, a metal material can be used for the material of the cap 39. Thus, the material of the cap 39 may be any material that does not hinder the characteristics of the functional device 10.

When driving the semiconductor device 100, for example, a reference voltage (eg, 1.65 V) is applied to the reference bias pad 26 of the functional device 10 via the pad 32 of the signal processing device 33. In this way, the output voltage of the functional element 30 (1.65 V + the output voltage of the sensing element 20) is output from each output pad 24. The output voltage from each output pad 24 is input to the corresponding input pad 31 of the signal processing device 33. The multiplexer 41 of the signal processing device 33 alternatively inputs the output voltages of the plurality of input pads 31 to the amplifier circuit 42. As a result, an infrared image that is the output of the functional device 10 can be obtained.

Next, a method for manufacturing the semiconductor device of this embodiment will be described with reference to FIG.

The semiconductor device manufacturing method includes a wafer processing process, a sticking process, a dicing process, a peeling process, a removing process, a separating process, a mounting process, a cleaning process, and a sealing process.

In the semiconductor device manufacturing method of this embodiment, first, a wafer processing step is performed. Since this wafer processing step has already been described in the first embodiment, a description thereof will be omitted.

After the wafer processing step, as in the first embodiment, a pasting step, a dicing step, a peeling step, a removing step, and a separating step are performed. Then, after the separation step, a mounting step is performed. Since the pasting process / dicing process / peeling process / removing process / separating process has already been described in the first embodiment, the description thereof is omitted.

In the mounting process, the functional device 10 is mounted on the base 36 using the first adhesive. Specifically, the other surface in the thickness direction of the substrate 1 of the functional device 10 (the lower surface in FIG. 5A) is bonded to the inner bottom surface of the base 36 using the first adhesive. In the mounting process, the signal processing device 33 is mounted on the base body 36 using the first adhesive. Specifically, the back surface (the lower surface in FIG. 5A) of the signal processing device 33 is bonded to the inner bottom surface of the substrate 36 using the first adhesive. As a result, as shown in FIG. 5A, each of the functional device 10 and the signal processing device 33 is mounted on the base body 36 by the first bonding layer (mounting adhesive layer) 37 made of the first adhesive.

The first adhesive is, for example, solder. For the first adhesive, an inorganic material such as glass or Au—Si can be used in addition to solder. In addition, organic materials, such as an epoxy resin, can also be used for a 1st adhesive agent. However, considering degassing, the first adhesive is preferably an inorganic material.

After the functional device 10 and the signal processing device 33 are mounted on the substrate 36, the output pads 241 to 244 of the functional device 10 are connected to the corresponding input pads 311 to 314 of the signal processing device 33 by wirings 35. Further, the reference bias pad 26 of the functional device 10 is connected to the pad 32 of the signal processing device 33 by the wiring 35.

In the semiconductor device 100, the outer peripheral shape of the substrate 1 of the functional device 10 is rectangular. At the end on the first side of the outer periphery of the substrate 1, all output pads 241 to 244 for extracting output signals output from the functional element 30 and the reference bias pad 26 are provided on the first side of the substrate 1. It is juxtaposed along the side. Further, the outer peripheral shape of the signal processing device 33 is rectangular. All the input pads 311 to 314 and the pads 32 are juxtaposed along the second side of the signal processing device 33 at the end on the second side of the outer periphery of the signal processing device 33. The functional device 10 is mounted on the package 40 so that the distance between the first side of the substrate 1 and the second side of the signal processing device 33 is shorter than the distance between any other sides of the signal processing device 33. It is installed. Therefore, the wiring 35 that connects the output pad 24 of the functional device 10 and the input pad 31 of the signal processing device 33 can be shortened. Further, the wiring 35 connecting the reference bias pad 26 of the functional device 10 and the pad 32 of the signal processing device 33 can be shortened. Thereby, the influence of external noise can be reduced and noise resistance is improved.

Here, it is preferable to remove organic contaminants from the base body 36 and the cap 39 before the sealing step. Therefore, a cleaning process is performed after the mounting process and before the sealing process.

In the cleaning process, unnecessary organic substances are removed from the substrate 36 and the cap 39. In the cleaning process, ashing is performed. The ashing process takes into account the size of the functional device 10 and the signal processing device 33 arranged in the substrate 36, the number of the functional device 10 and the signal processing device 33, and the material used for the functional device 10 and the signal processing device 33. As appropriate. As the ashing process, for example, a light excitation ashing process using an ozone ashing apparatus or a plasma ashing apparatus can be employed. Note that the cleaning process may be performed before the mounting process.

Also, the mounting process may be performed before the removal process. In this case, in the removing step, organic substances attached to the substrate 36 are removed. Specifically, after the wafer processing step, the separation step is performed after the pasting step, the dicing step, and the peeling step. Then, after the separation step, a mounting step is performed, and then a removal step is performed. By changing the order of the processes in this way, unnecessary organic substances can be removed from both the functional device 10 and the mounting substrate 36 at the same time. In this case, unnecessary organic substances may be removed from the cap 39 in the removing step. In the removing step, unnecessary organic substances may be removed from at least one of the base body 36 and the cap 39.

It should be noted that it is preferable to remove unnecessary organic substances from the signal processing device 33. The process of removing unnecessary organic substances from the signal processing device 33 may be performed together with the process of removing organic substances from the functional device 10, the substrate 36, and the cap 39 in the above-described removal process and cleaning process, or may be performed separately. Good. However, it is necessary to remove the organic substance from the signal processing device 33 before the sealing step.

In the sealing step, after the removing step and the mounting step, the cap 39 is joined to the base 36 using the second adhesive, and the functional device 10 is hermetically sealed with the package 40. Specifically, the second adhesive is applied to the edge of the opening on the one surface of the substrate 36. Thereafter, the cap 39 is placed on the one surface of the substrate 36 so as to cover the opening on the one surface of the substrate 36. As a result, as shown in FIG. 5C, the cap 39 is joined to the base body 36 by the second joining layer (sealing adhesive layer) 38 made of the second adhesive.

The second adhesive is, for example, glass. In addition to glass, an inorganic material such as solder or Au—Si can be used for the second adhesive. An organic material such as an epoxy resin can also be used for the second adhesive. However, considering degassing, the second adhesive is preferably an inorganic material.

Incidentally, in the sealing step, the cap 39 is joined to the base body 36 so that the inside of the package 40 is evacuated. For example, after the ashing process in the removal process or the cleaning process, the package 40 is vacuum-sealed so that the oxygen flowed during the ashing is stopped in the vacuum processing apparatus so that the package 40 is not contaminated.

Alternatively, in the sealing step, the cap 39 may be bonded to the base body 36 so that the inside of the package 40 is at a positive pressure. For example, a gas (for example, an inert gas such as Ar gas or a nitrogen gas (N _{2) that} does not substantially affect exposure to each functional device 10 or the like instead of oxygen flowed during the ashing process in the removal process or the cleaning process. )) Is sealed in the package 40 under pressure. As a result, the inside of the package 40 is set to a positive pressure.

As described above, the semiconductor device manufacturing method of the present embodiment includes a wafer processing step, a sticking step, a dicing step, a peeling step, a removing step, a separating step, a mounting step, a cleaning step, A sealing step. In the wafer processing step, the functional thin film 2 is formed on the one surface 3a of the wafer 3 that is the basis of the substrate 1. In the sticking step, after the wafer processing step, the protective sheet 6 which is an adhesive sheet using an adhesive is directly attached to the one surface 3a of the wafer 3, and the dicing sheet 7 is attached to the other surface 3b of the wafer 3. . In the dicing process, after the attaching process, the protective sheet 6 and the wafer 3 are cut without cutting the dicing sheet 7 and the wafer 3 is divided into a plurality of functional devices 10. In the peeling step, the protective sheet 6 is peeled from each functional device 10 after the dicing step. In the removing step, unnecessary organic substances including the adhesive of the protective sheet 6 attached to each functional device 10 are removed after the peeling step. In the separation step, each functional device 10 is separated from the dicing sheet 7. In the mounting process, the functional device 10 is mounted on the base 36 using the first adhesive after the dicing process. In the cleaning process, before the sealing process, the substrate 36 and the cap 39 are cleaned to remove unnecessary organic contaminants. In the sealing step, after the removing step and the mounting step, the cap 39 is joined to the base 36 using the second adhesive, and the functional device 10 is hermetically sealed with the package 40.

According to the manufacturing method of the semiconductor device of this embodiment, organic contaminants from the package 40, that is, unnecessary organic substances (adhesive of the protective sheet 6) attached to the functional device 10, the base 36 and the cap 39. The attached organic matter and the organic matter attached to the signal processing device 33 can be removed. Therefore, it is possible to prevent deterioration of the performance of the functional device 10 due to unnecessary adhesion of organic matter, for example, when the functional device 10 is an infrared sensor, the deterioration of infrared transmission characteristics due to degassing from the organic matter or the like. Therefore, it is possible to prevent the performance of the semiconductor device 100 from being deteriorated.

In the sealing process, the cap 39 is joined to the base body 36 so that the inside of the package 40 is in a vacuum or a positive pressure. In this case, since unnecessary organic substances are removed from the functional device 10, the pressure in the package 40 does not change due to degassing of the organic substances. Therefore, a decrease in performance of the semiconductor device 100 can be prevented. In particular, if the inside of the package 40 is evacuated, the change in the degree of vacuum in the package 40 can be eliminated and the reliability of the semiconductor device 100 can be improved. On the other hand, if the inside of the package 40 is set to a positive pressure, gas outside the package 40 such as the atmosphere does not flow into the package 40. Therefore, the reliability of the semiconductor device 100 can be improved.

Further, since at least one of the first adhesive and the second adhesive is made of an inorganic material, even when the package 40 is hermetically sealed, a change in internal pressure due to degassing from the first adhesive or the second adhesive. Can be eliminated.

Moreover, since the organic matter adhering to at least one of the base body 36 and the cap 39 is removed before the sealing step, it is possible to prevent the performance of the semiconductor device 100 from being deteriorated.

In this case, it is preferable to remove the organic matter adhering to the substrate 36 in the removing step by performing the mounting step before the removing step. In this way, after mounting the functional device 10 on the base 36, unnecessary organic matter of the functional device 10 and unnecessary organic matter of the base 36 can be removed simultaneously. Therefore, it is possible to prevent the performance of the semiconductor device 100 from being deteriorated and to improve the yield.

Claims (10)

1. A substrate,
   A functional thin film having a predetermined function formed on the substrate,
   A method of manufacturing a functional device in which a cavity for spatially separating the substrate and the functional thin film is formed on the substrate,
   A wafer processing step of forming the functional thin film on one surface of the wafer serving as a base of the substrate;
   Affixing a protective sheet, which is an adhesive sheet using an adhesive, directly on one surface of the wafer after the wafer processing step, and attaching a dicing sheet to the other surface of the wafer;
   After the attaching step, the dicing step of cutting the protective sheet and the wafer without cutting the dicing sheet and dividing the wafer into a plurality of the functional devices;
   After the dicing step, a peeling step of peeling the protective sheet from each functional device,
   After the said peeling process, the removal process of removing the unnecessary organic substance containing the said adhesive of the said protective sheet adhering to each said functional device is provided, The manufacturing method of the functional device characterized by the above-mentioned.
2. The functional device has a slit that penetrates the functional thin film in the thickness direction and communicates with the cavity.
   2. The method of manufacturing a functional device according to claim 1, wherein, in the removing step, unnecessary organic substances attached to at least one of the inner surface of the slit and the inner surface of the cavity are removed.
3. The said peeling process WHEREIN: After attaching the peeling member to the surface on the opposite side to the said wafer in the said protection sheet, the said protection sheet is peeled from the said functional device together with the said peeling member. 2. A method for producing a functional device according to 1.
4. The method for producing a functional device according to claim 1, wherein the protective sheet is a heat-peelable pressure-sensitive adhesive sheet that uses a pressure-sensitive adhesive whose adhesive strength decreases when heated.
5. 5. The functional device according to claim 4, wherein, in the peeling step, the protective sheet is uniformly heated while pressure is uniformly applied to the entire surface of the protective sheet before peeling the protective sheet from the functional device. Manufacturing method.
6. A functional device;
   A package containing the functional device,
   The functional device includes a substrate and a functional thin film having a predetermined function formed on the substrate,
   In the substrate, a cavity for spatially separating the substrate and the functional thin film is formed,
   The package is a method of manufacturing a semiconductor device including a base on which the functional device is mounted and a cap that surrounds the functional device with the base.
   A wafer processing step of forming the functional thin film on one surface of the wafer serving as a base of the substrate;
   Affixing a protective sheet, which is an adhesive sheet using an adhesive, directly on one surface of the wafer after the wafer processing step, and attaching a dicing sheet to the other surface of the wafer;
   After the attaching step, the dicing step of cutting the protective sheet and the wafer without cutting the dicing sheet and dividing the wafer into a plurality of the functional devices;
   After the dicing step, a peeling step of peeling the protective sheet from each functional device,
   After the peeling step, a removing step of removing unnecessary organic matter including the adhesive of the protective sheet attached to each functional device;
   A mounting step of mounting the functional device on the substrate using the first adhesive after the dicing step;
   A sealing step of sealing the functional device with the package by bonding the cap to the substrate using a second adhesive after the removing step and the mounting step. A method for manufacturing a semiconductor device.
7. The method of manufacturing a semiconductor device according to claim 6, wherein, in the sealing step, the cap is joined to the base body so that the inside of the package is in a vacuum or a positive pressure.
8. 8. The method of manufacturing a semiconductor device according to claim 7, wherein at least one of the first adhesive and the second adhesive is made of an inorganic material.
9. 7. The method of manufacturing a semiconductor device according to claim 6, wherein an organic substance adhering to at least one of the base and the cap is removed before the sealing step.
10. Perform the mounting process before the removal process,
    7. The method of manufacturing a semiconductor device according to claim 6, wherein in the removing step, organic substances adhering to the substrate are removed.

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