TW201017744A - Method for manufacturing functional device, and method for manufacturing semiconductor device provided with functional device - Google Patents

Abstract

A method for manufacturing a functional device is provided with a wafer processing step, a bonding step, a dicing step, a peeling step and a removing step. In the wafer processing step, a functional thin film (2) is formed on one surface (3a) of a wafer (3) to be the base of a substrate (1). In the bonding step after the wafer processing step, a protection sheet (6), i.e., an adhesive sheet using an adhesive, is directly bonded on the surface (3a) of the wafer (3), and a dicing sheet (7) is bonded on the other surface (3b) of the wafer (3). In the dicing step after the bonding step, the protection sheet (6) and the wafer (3) are cut without cutting the dicing sheet (7), and the wafer (3) is divided into a plurality of functional devices (10). In the peeling step after the dicing step, the protection sheet (6) is peeled from each functional device (10). In the removing step after the peeling step, an organic material containing the adhesive of the protection sheet (6) adhered on each functional device (10) is removed.

Description

201017744 6. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a functional device, and a method of manufacturing a semiconductor device having the functional device. , ^ [Prior technology]

Since the past, a high-frequency device, a thermal infrared sensor, and a MEMS (Micr〇 Electro Mechanical Systems; MEMS) device have been provided (for example, an acceleration sensor, a gyro sensor, an ultrasonic sensor, Functional device such as microvalve) (functional wear). " Such a functional device is provided with a substrate and a functional film having a predetermined function and formed on the substrate. A hole is formed in the substrate to spatially separate the substrate from the functional film. In the manufacture of functional devices, the base of the substrate, such as a wafer (e.g., wafer), is typically used. In the case of using a wafer, after forming the above functional film on one surface of the wafer, the wafer is divided into a plurality of functional devices by dicing. The above functional film is weak and fragile. Therefore, the functional film is damaged when it is cut. In particular, when the wafer is fixed to the vacuum suction of the cutting table or the pure ejection at the time of cutting, the functional film is damaged. 3 201017744 In view of such a problem, the manufacturing method of the functional device disclosed in the document 1 (Japanese Laid-Open Patent Publication No. 2 0 0 - 1 8 6 2 5 5) is on a surface of the wafer. After the T-cladding layer is formed and the dicing sheet is attached to the other surface of the wafer, the wafer is diced. The protective layer is removed after the wafer is cut. The above document 1 discloses the use of an adhesive protective sheet in place of the protective layer. "Using the method of manufacturing the functional device disclosed in Document 2 (Japanese Laid-Open Patent Publication No. 2 No. 5 1 9 7 4 3 6). This is made by opening a circle and forming a resist film. After the resist film is attached to the resist film, the wafer is cut. The protective sheet is removed by dissolving the resist film after the wafer is cut. However, the method for manufacturing the functional device disclosed in the above document 1 After removing the protective layer or the protective sheet, there is still a part of the protective layer on the surface of the functional device or the adhesive of the protective sheet, etc. One part of the protective layer attached to the surface of the functional device The adhesive of the protective sheet is one of the factors for degrading the performance of the functional device. Further, in the method of manufacturing the functional device disclosed in the above document 2, after the resist is applied onto the wafer by spin coating or the like, Then, the resist film is thermally cured to form a resist film. Therefore, when the resist is thermally cured, expansion and contraction of the resist film occurs to apply stress to the functional film. Accordingly, the functional film is destroyed. In addition to using wet etching The functional device for removing the resist film is also destroyed by 201017744. [Invention] The present invention has been made in view of the above circumstances. It is an object of the present invention to provide an improvement in yield and prevention of adhesion due to organic matter. A method of a functional device having a reduced performance of a functional device, and a method for manufacturing a semiconductor device having a functional device. The functional device manufactured by the method for manufacturing the functional device 4 according to the present invention includes a substrate; and/or on the substrate And a functional film having a predetermined function, and forming a hole for spatially separating the substrate and the functional film on the substrate. The manufacturing method of the functional device according to the present invention includes a wafer processing step. The attaching step, the dicing step, the stripping step, and the removing step. The above-described functional film is formed on the surface of the wafer on which the substrate is a substrate in the wafer processing step. In the above, the step t' is applied to the crystal After the round processing step, a protective sheet with an adhesive is directly attached to a surface of the wafer. Simultaneously attaching the dicing sheet to the other surface of the wafer. After the attaching step in the dicing step, the protective sheet and the wafer are divided and formed into the wafer without cutting the dicing sheet. a plurality of the above-mentioned functional devices. In the peeling step, the protective sheet is peeled off from each of the functional devices after the cutting step. In the removing step, after the peeling step, the attached 201017744 is removed from each of the above According to the invention, the protective film and the dicing sheet are used to cut the wafer, so that the functional film can be prevented from being damaged. The yield is improved. Further, since the useless organic substances adhering to the functional device can be removed, the performance of the functional device can be prevented from being lowered due to the adhesion of the organic substances. Therefore, the performance of the above functional device can be improved. In particular, even after the above-mentioned peeling step, the above-mentioned adhesive device adheres to the above-mentioned adhesive agent, and the above-mentioned adhesive can be surely removed in the above-mentioned removing step. Therefore, the deterioration of the performance of the above functional device due to the adhesion of the above-mentioned adhesive can be prevented. The functional device has a slit that penetrates the thickness direction of the functional film and communicates with the hole. In the removing step, the useless organic matter adhering to at least one of the inner surface of the slit and the inner surface of the hole is removed. Since the use of the organic substance adhering to the functional device can be removed, the performance of the functional device can be prevented from being lowered due to the adhesion of the organic substance. Therefore, the performance of the above functional device can be improved. Preferably, the peeling step causes the protective sheet and the peeling member to be peeled off from the work together with the peeling member on the surface opposite to the wafer in the protective sheet. , 201017744 This can be used to reduce costs. Che Yujia is the above-mentioned protective sheet, which is a heat-peelable adhesive sheet that uses an adhesive which is lowered by heat. In this manner, the protective sheet can be easily peeled off from the functional device by heating the protective sheet. Therefore, the above-mentioned functional film can be prevented from being damaged when the protective sheet is peeled off. More preferably, in the peeling step, the protective sheet is uniformly heated while uniformly applying the pressure to the protective month before the protective sheet is peeled off from the functional device. Thus, the protective sheet can be prevented from being broken when the protective sheet is peeled off. The protective sheet can be surely peeled off from the functional film. A semiconductor device manufactured by the method of manufacturing a semiconductor device according to the present invention is provided with a functional device and a package that accommodates the above-described function. The functional device includes a substrate and a functional film that has a predetermined function on the substrate. The upper substrate is formed with holes which are spatially separated from the above-mentioned substrate and the above functional film. The package is composed of a base body that houses the functional device and a cap that surrounds the functional device with the base body. The method for manufacturing a semiconductor device according to the present invention has a θθ circle processing step, an attaching step, a dicing step, a stripping step, a removing step, a structuring step, and a sealing step. In the above-described wafer processing step, the functional film is formed on one surface 201017744 of the substrate on which the substrate is a substrate. In the attaching step, after the wafer processing step, a protective sheet with an adhesive is directly attached to one surface of the wafer while the dicing sheet is attached to the other surface of the wafer. In the dicing step, after the attaching step, the protective sheet and the wafer are divided into a plurality of the functional devices without cutting the dicing sheet. In the peeling step, after the cutting step, the protective sheet is peeled off from each of the functional devices. In the above removal step, after the above-mentioned peeling step, the useless organic matter adhering to the above-mentioned adhesive sheet of the above-mentioned protective sheet is removed. In the above-described structuring step, after the dicing step, the functional device is attached to the substrate using a first adhesive. In the sealing step, after the removing step and the structuring step, the cap is bonded to the substrate using a second adhesive, and the functional device is hermetically sealed in the package. According to the invention, since the useless organic matter adhering to the functional device can be removed, it is possible to prevent the performance of the functional device from being lowered due to the adhesion of the organic substance. Therefore, the performance of the above semiconductor device can be prevented from being lowered. Preferably, in the sealing step, the cap is joined to the base body to make the package body vacuum or positive. As a result, since the useless organic matter is removed from the functional device, there is no possibility that the pressure in the sealing body changes due to degassing of the organic matter. Therefore, it is possible to prevent the above-described semiconductor device property 201017744 from being lowered. In particular, if the package body is vacuumed, the change in the degree of vacuum in the package can be eliminated, and the reliability of the semiconductor device can be improved. Further, when β is detected, and the inside of the package is positively pressurized, the gas outside the package such as the atmosphere does not flow into the package. Therefore, the reliability of the above semiconductor device can be improved. More preferably, at least one of the first adhesive and the second adhesive is made of an inorganic material. In the case where the package is made airtight, it is possible to eliminate the internal pressure change caused by the degassing from the first adhesive and the second adhesive. Preferably, the organic substance adhering to at least one of the base body and the cap is removed before the sealing step. As a result, the performance of the above semiconductor device can be prevented from being lowered. More than this, the above-described constitutional steps are carried out before the above removal step. In the above removal step, the organic matter attached to the substrate is removed. In this manner, after the functional device is mounted on the substrate, the useless organic matter of the functional device and the useless organic matter of the substrate can be simultaneously removed. Therefore, the performance of the above-described semiconductor device can be prevented from being lowered, and the yield can be improved. [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) 201017744 The second and third figures show a functional device 1 manufactured by the manufacturing method of the functional device of the present embodiment. The functional device 1 is an infrared array sensor (infrared image sensor). The functional device i 0 includes a substrate i and a functional thin film 2 having a predetermined function and formed on the substrate 1. The substrate 1 is a germanium substrate. The functional film 2 is formed on one surface of the substrate i in the thickness direction - the main surface (the upper surface in the - (e)). As shown in the second diagram (a), the functional film 2 is provided with m x n (2 χ 2 in the illustrated example) functional elements 30 arranged in a two-dimensional array. Further, the functional film 2 may have only one functional element 30. The functional element 30 is a thermal infrared detecting element having a thermocouple type sensing element 20 made of a thermopile. The functional element 30 functions as a photo-electric conversion element of a pixel in an infrared image sensor. Further, in the second diagram (b), the sensing element 20 is illustrated as a voltage source corresponding to the thermoelectromotive force of the sensing element 2 。. Here, a hole 5 is formed in the substrate 1 for spatially separating the substrate 1 and the functional film 2. The hole 5 is such that the functional element 3 of the functional film 2 and the substrate are thermally isolated. Accordingly, the sensitivity of the functional element 30 belonging to the infrared detecting element can be improved. In the illustrated example, the holes 5 are formed in pits on the substrate 1. The hole 5 may also be a hole penetrating through the substrate 丄 thickness direction 201017744. As shown in the second diagram (b), the portion of the functional element 30 (the portion of the film 2) is spatially separated from the substrate 1 by the hole 5. The portion of the functional element 3 Q that is spatially separated from the substrate unit constitutes an infrared absorbing body j 1 that absorbs infrared rays. In the four corners of the rectangular region of the infrared absorbing body 2 i, a fine quilting (through hole) 4 penetrating the functional element 3 in the thickness direction is formed. The slit 4 is in communication with the hole 5. By forming such a slit 4, the infrared absorbing body 2 and the substrate i can be thermally isolated. Therefore, the sensitivity of the infrared detecting element_functional element 30 can be improved. Further, the shape of the slit 4 is not only a rectangle, but may be variously selected in accordance with the expectation of a square, an ellipse or a circle. As shown in the third figure (b), the functional element 3 is formed by patterning a laminated structure which is made of a ruthenium oxide film 1 and a tantalum nitride film. The element 20, the interlayer insulating film 17 and the purification film 19 are formed. The functional element 30 formed by such a laminated structure is much thinner than the substrate 1. The oxidized fragment film 11 is formed on the main surface of the substrate 1. Nitrogen The ruthenium film 12 is formed on the ruthenium oxide film 11. The sensing element 20 is formed on the tantalum nitride film 12. The interlayer insulating film 17 is formed to cover the sensing element 20 by the surface side of the tantalum nitride film 12 (the upper side in the third figure (b)). The interlayer insulating film 17 such as 201017744 is a B P S G (Boro-PhosphoSilicate Glass) film. The passivation film 19 is formed on the interlayer insulating film 17 by a passivation film such as a P S G (Phospho Silicate Glass) film and a laminated film of a NSG (Non-doped Silicate Glass) film formed on the P SG film.

In the functional device 10, the laminated film of the interlayer insulating film 17 and the passivation film 19 constitutes the infrared absorbing film 22. The thickness t of the infrared absorbing film 2 2 is λ/4 η. Here, η is the refractive index of the infrared absorbing film 22, and is the center wavelength of the infrared ray (for example, the infrared ray of the wavelength of 8 to 12 //m emitted by the human body) to be detected. In this way, the absorption efficiency of the infrared ray of the object to be detected by the two infrared absorbing films 2 2 can be extracted. For example, in the case where η = 1.4, Λ = 1 〇 / ζ ηι, t and in this case, the film thickness of the interlayer insulating film 丄 7 is 〇 · 8//111, ? The film thickness of the 8〇 film is 0.5#111, ^^3 (5 film)

The film thickness is 0.5 mM. Further, the passivation film 丄9 may also be a ruthenium nitride film. As shown in the third diagram (a), the sensing element 2 has four thermocouples 2 串 in series. Each of the thermocouples 2 〇 is composed of a p-type polycrystalline germanium layer 15 , an n-type polycrystalline germanium layer 3 , and a connecting layer 2 3 . The p-type polycrystalline germanium layer 15 and the n-type poly germanium layer 2 3 form a cross-infrared absorber 2 i and a substrate. The p-type polycrystalline germanium layer 15 and the n-type poly germanium layer 13 are not in contact with each other. The connecting layer 23 is on the side of the substrate on the side of the substrate of the infrared absorbing body 2, on the side of the infrared radiation surface of the surface (the third figure (b) #: the 曰曰矽 layer 1 5 and n-type polysilicon layer 3 electrical connection: the connection layer 23 is formed, for example, by a metal material such as Si, and the connection layer 23 is formed by a contact hole 25 formed in the interlayer insulating film 7 #层i 3 and the type of the polysilicon layer 15 are electrically connected. /The other end of the thermocouple 2 0 pp-type polysilicon layer 5, 10 is on the main surface side of the substrate 1, by wiring The other end of the n-type polycrystal (4) 丄3 of the phase (4) thermocouple is electrically connected to the electrode 8. The wiring 1 8 is formed, for example, of a metal material such as 八1-S i. The four thermocouples 2GQ are The wiring 18 is connected in series to form a sensing element 2 that is formed by a thermopile. The sensing element 2 has a temperature contact disposed on the infrared absorber 21 and a cold junction disposed on the substrate 1. The temperature contact is formed by one end of the n-type polysilicon layer 13; one end of the p-type polysilicon layer 15 and the connection layer ® 23. The cold junction is formed by a p-type polycrystalline stone. Floor The other end of the 5, the other end of the n-type polysilicon layer 13 and the wiring i 8 are formed. As shown in the second diagram (a), the functional film 2 has a plurality of (four in the illustrated example) The output pads (24丄~2 4 4 ) and one reference bias pad 26. The ends of the sensing elements 2 〇 are electrically connected to the corresponding output ports 24 via the vertical readout lines 27 . The other end of each of the sensing elements 2 〇 is electrically connected to the common reference bias line 13 by a reference bias line 28 . The reference bias line 2 9 is electrically connected to the reference. The bias voltage is 26. That is, on each output 塾2 4, the sensing element 2 〇 is connected to each other. The other end of the 'multiple _ component 2 ◦ on the reference money 塾 2 6 In this functional device 10, for example, by setting the potential of the base:pad 26 to [.], the output voltage of the functional component 30 can be taken out from each output 塾2 4 (i 6 5 v + output voltage of the sensing element 20). In the infrared human emitting surface of the infrared absorbing body 21, an n-type compensation complex crystal second layer 14 and a Ρ-type compensation complex crystal layer i 6 are formed. The polycrystalline material 14 and the Ρ-type compensating polycrystalline hard layer 16 are disposed so as not to be in contact with each other. The n-type compensation polycrystal (4) i 4 system and the n-type complex 1 曰 夕 layer 13 are integrally formed. That is, the n-type is performed. When the pattern of Fujing Shixi 13 is patterned, the η-type compensation of the polycrystalline 矽 layerer is retained: the Ρ-type compensation of the crystallization layer of the ceramsite layer; the formation of the hexa-type polycrystalline stone 夕 layer 丄5-body formation That is, 'when the patterning of the 复-type complex riding layer 15 is performed', the portion of the p-type compensation polycrystal tilting i 6 is retained. The η-type compensation isocyanite 丄 layer 丄 4, p-type compensation complex 矽 1 6 It is to improve the uniformity of the stress balance of the functional components. Accordingly, the functional element 3 can be patterned to prevent filming and warpage. Accordingly, the sensitivity of the functional element 3 that is an infrared detecting element can be improved. A Next, with reference to the first and fourth figures, a method of manufacturing the device of the present embodiment will be described. 201017744 The manufacturing method of the functional device has a wafer processing step (previous step) and a dividing step (the latter step) performed after the wafer processing step. In the wafer processing step, the functional film 2 is formed on one surface of the wafer 3 on which the substrate i is a substrate. As shown in the first figure (a), the wafer 3 having the substrate 1 and the functional film 2 is obtained by a wafer processing step. On one surface (one side in the thickness direction) 3 a of the wafer 3, a plurality of functional devices 1 形成 are formed. In the present embodiment, 'one surface 3 of the wafer 3' is the surface on the opposite side to the substrate 1 side of the functional film 2 (the upper surface in the first diagram (a)). The other surface (thickness) of the wafer 3 The other side of the direction 3b is the other surface in the thickness direction of the substrate 1 (the lower side in the first direction). The manufacturing method of the functional device of the present embodiment has a feature in the dividing step 。. Therefore, the wafer processing step is in response. The configuration of the functional device 10 is appropriately changed. Hereinafter, an example of a wafer processing procedure in the case where the functional device process is an infrared sensor will be briefly described. In the wafer processing step, the insulation is initially performed. a layer forming step: forming an insulating layer (thermal insulating layer) on the main surface of the substrate in the insulating layer forming step. The insulating layer is a predetermined thickness (for example, 3,000 A) of the oxidized chipping and the predetermined a film of a tantalum nitride film 2 having a film thickness (for example, 900 A). The yttrium oxide film 1 is transmitted through a substrate at a predetermined temperature (for example, 1 1 ocrc) 201017744. The main surface of 1 is thermally oxidized to form LPC Formed by the VD method. After the step of forming the color edge layer, the film is formed in the layer of the polycrystalline stone. The Φ layer is formed in the step of the crystallization of the crystallization layer. In the step, the LPCVD method is used; Forming a predetermined film thickness (in the case of 复 _ 矽 ] ] ] ] ] ] ] ] ] ] ] 4 1 1 1 、 的 的 的 的 的 的 的 的 的 的 的 的 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶After the step, the polycrystal (four) patterning is performed in the patterning step of the twinned sand layer, using the lithographic printing technique and the (4) technique, and the 11-type polycrystalline germanium layer 13 and η in the above-mentioned non-doped pure crystal spar layer The type of the compensation-free polysilicon layer i 4, the ρ y-type polycrystallite layer 1 , the p-type compensation complex layer 16 is corresponding to the pattern to pattern the above-mentioned undoped polysilicon layer. After the layer patterning step, a p-type polycrystalline layer formation step is performed. In the formation process of the germanium-type polysilicon layer, the germanium-type polysilicon layer 5 and the port in the undoped polysilicon layer are Compensating for the portion corresponding to the hexagonal layer of the polycrystalline stone layer, performing ion implantation of the p-type impurity (for example, rotten, etc.), and then driving to form (4) polycrystalline The ruthenium layer 15 and the p-type compensation polysilicon layer 16. After the Ρ-type polysilicon layer formation step, the 11-type polysilicon layer formation step is performed. In the η-type polysilicon formation step, the above-mentioned non-doped The n-type polycrystalline germanium layer 13 in the hetero-polycrystalline germanium layer, the n-type compensation 201017744, the portion corresponding to the tetralithic layer of the polycrystalline quartz layer, the n-type impurity tank, etc., is ion-implanted, and then driven through. The spar layer 13, the n-type compensation polycrystal (4) 14. This =, the sequence of the formation of the spar layer and the step of forming the n-type polycrystalline layer can also be reversed. The step of forming the bismuth-type polycrystalline layer and the η After the end of the step of forming a polysilicon layer, the interlayer insulating film forming step is performed. in

In the insulating film forming step, two interlayer insulating layers 17 are formed on the main surface of the substrate 1. After the interlayer insulating film forming step, a contact hole forming step is performed. In the contact hole forming step*, a contact hole 25 is formed in the interlayer insulating film 17 by a lithography technique. After the contact hole forming step, a metal film forming step is performed. In the metal film forming step, a metal film (e.g., A i - S i 臈 ) having a predetermined film thickness (for example, 2 # m ) is formed on the entire surface of the main surface of the substrate by sputtering or the like. This metal film serves as the basis for the connection layer 23, the wiring 18, the vertical readout line 2γ, the reference bias line 28, the common reference bias line 29, and the pads 24 and 26. After the metal film forming step, a metal film patterning step is performed. In the metal film patterning step, the metal film is patterned by using a lithography technique and an etching technique to form a connection layer 23, a wiring 18, a vertical readout line 27, a reference bias line 28, and a common reference bias. Press line 29, each pad 24, 26. 201017744 After the metal film patterning step, a passivation film formation step is performed. In the passivation film forming step, on the above main surface of the substrate 1 (that is, on the surface of the interlayer insulating film 17), a psg film having a predetermined film thickness (for example, 500 A) is formed by the cv D method. A passivation film 19 formed of a laminate film of an n SG film having a predetermined film thickness (for example, 500 A). After the passivation film forming step, a laminated structure patterning step is performed. In the laminated structure patterning step, the functional thin film 2 is formed by patterning the above-described laminated structure. Specifically, in the step of patterning the laminated structure, the functional film 2 is obtained by forming the slit 4. After the layered structure patterning step, an opening forming step is performed. In the opening forming step, an opening (not shown) in which each of the pads 24, 26 is exposed is opened by a lithography technique and an etching technique. In the opening forming step, r I E is used. After the opening forming step, a hole forming step is performed. In the hole forming step, each slit 4 is used as an etching liquid introduction hole and an etching liquid is introduced to anisotropically etch the substrate 1, whereby a hole 5 is formed in the substrate 1. Accordingly, as shown in the second figure, the functional device i 功能 in which the functional elements 30 are arranged in a two-dimensional array is obtained. In the hole forming step, a solution of butyl M A ruthenium heated to a predetermined temperature (e.g., 8 5 C) is used as an etchant. The etching solution is not limited to a butyl M A Η solution, and may be other alkali-based solutions (for example, a κ Η solution, etc.). 18 201017744 Step, removal, step, cutting step, stripping step removal step, and separation step. The attachment step is performed. Initially, in the attaching step, the dicing sheet 7 is attached to the other surface 3b of the wafer 3. In the present embodiment, the other surface 3b of the wafer 3 is attached. After U directly attaches m w m mo /, the protective sheet 6 is directly attached to the wafer 3 for protection work.

. Accordingly, the configuration shown in the first diagram (a) is obtained. This is fixed.佯:: The order of staying two sheets 6 and cutting sheets 7 is not particularly limited. λ, and the sheet 6 is attached to the wafer 3 in comparison with the dicing sheet 7, and the functional film 2 is quickly protected. , ... protective film (temporary fixed film) 6 series will temporarily fix the functional film 2 and: to protect. The protective sheet 6 utilizes an adhesive (adhesive) and an adhesive sheet (attach sheet). Such an adhesive sheet is formed by applying an adhesive to the surface of a sheet or a belt-like substrate such as plastic or polyester having a thickness of about 1 to 50 〇em. In particular, the protective sheet 6 is an adhesive sheet which is capable of protecting the functional film 2 from the stress caused by the cutting stress at the time of cutting the wafer 3 and the cooling and cleaning, and does not hinder the cutting of the wafer 3. It is appropriate. As the protective sheet 6, an ultraviolet peeling type adhesive sheet, a water-soluble peeling type adhesive sheet, and a heat-peelable type adhesive sheet are preferably used. The ultraviolet ray-off type adhesive sheet is an adhesive sheet using an adhesive which reduces the adhesion by ultraviolet rays. The water-soluble peel-off adhesive sheet utilizes an adhesive sheet in which the adhesive is lowered by immersion in an aqueous solution. 19 201017744 The heat-peelable adhesive sheet utilizes an adhesive sheet of an adhesive which adheres to heat by adhesion. Here, in consideration of mass productivity, it is preferable to reduce the adhesion for a short period of time. From this point of view, it is preferable to use a heat-peelable pressure-sensitive adhesive sheet or a UV-peelable pressure-sensitive adhesive sheet as compared with the water-soluble release-type pressure-sensitive adhesive sheet. Further, when the water-soluble peeling type adhesive sheet is peeled off, it is necessary to impregnate the functional device i with the protective sheet 6 in the aqueous solution. Thus, the characteristics of the functional film 2 of the functional device i are deteriorated. - Further, when considering the adhesive force after the treatment, the residual adhesive force of the heat-peelable adhesive sheet is lower than that of the ultraviolet-peelable adhesive sheet. Therefore, if a heat-peelable adhesive sheet is used, the protective sheet 6 can be easily peeled off without causing damage to the functional film 2. In particular, the yield of the functional device 10 having the hole 5 and the slit 4 communicating with the hole 5 can be improved.

As such a heat-peelable pressure-sensitive adhesive sheet, an adhesive containing heat-expandable fine particles (for example, a rubber-based adhesive, an acrylic-based adhesive, a vinyl alkyl ether adhesive, an anthraquinone adhesive, or a polyester adhesive) can be used. Adhesive sheet of a drug, a polyamido-based adhesive, an urethane-based adhesive, or a fluorine-based adhesive. As the heat-expandable fine particles, for example, a microcapsule in which a substance which is easily gasified and expanded by heating (e.g., isobutane, propane, or pentane) is enclosed in an elastic shell can be used. When the protective sheet 6 is attached to one surface 3 a of the wafer 3, the protective sheet 6 is placed on the surface 3a of the wafer 3 on 20 201017744, and the protective sheet is protected by a rubber rolling or a press or the like. (4) One surface can be pressed. Further, in the case where the adhesive sheet using the tape-shaped substrate is used as the protective sheet 6, the protective sheet 6 may be attached to the wafer 3 by an -oil method. In the cutting step, after the attaching step, the protective sheet 6 and the wafer 3 are cut off and the wafer 3 is divided into a plurality of functional devices 10 under the uncut cutting sheet 7. First, in the (fourth) step, wafer mounting for fixing the wafer 3 to the flat and ring (not shown) is performed. The fixing of the wafer 3 and the flat ring is carried out by a usual method using the dicing sheet 7. Therefore, the wafer 3 is fixed to the flat ring by the other surface 3b. After the wafer is mounted, the plate ring to which the wafer 3 is attached is fixed to a cutting table (not shown) of the cutting device. For example, the flat ring is secured to the cutting table by vacuum suction. 1 Lu After the flat ring is fixed to the cutting table, the wafer 3 is cut from the protective sheet 6#κ - surface 3a side. Specifically, the dicing blade (not shown) is used to cut the wafer 3 along the respective protective sheets 6 along the sawing line "t...t" on the wafer 3. The cutting system performs full cutting instead of half cutting. Thus, the structure shown in Fig. (b) is obtained. After the dicing step, the wafer 3 is divided into a plurality of functional devices 10 by grooves (cutting grooves) 8. That is, the wafer 3 is wafer-formed. A plurality of functional agricultural units 10 are fixed to the cutting piece 7. The functional film 2 placed is attached with a divided protection month 6: 201017744 In the cutting step, for example, a cutting blade having a thickness of several tens of micrometers (_) is used. During cutting, the cutting blade is rotated at a high speed of about 3 〇〇〇 to 400 rpm. In addition, in order to reduce the cooling of the cutting blade and the removal of the cutting chips, the cleaning is performed while cutting. Pure water is used. After the wafer 3 is cut, the flat ring is removed from the cutting device. In addition, the whole material or the half cut may be appropriately selected depending on the material and structure of the functional device 10. In the peeling step (protective sheet peeling) In the step), after the cutting step, the protective sheet 6 is peeled off from each functional device 10. For example, in the case where the protective sheet 6 is a heat-peelable adhesive sheet, the heat treatment of the protective sheet of each functional device 1 is performed by a heater (for example, a hot air dryer, a hot plate, or a near-infrared lamp). In particular, in the peeling step in the present embodiment, the peeling member 9 is used to perform the protective sheet 6. The peeling member 9 is, for example, a metal plate having excellent heat conductivity, and is built in the metal plate for heating the metal sheet. A heating plate for the heater of the metal plate. Further, a plurality of fine holes (not shown) are formed in the metal plate of the peeling member 9 to attract and fix the protective sheet 6. In the peeling step in the embodiment, (c) First, the peeling member 9 is attached to the surface of the protective sheet 6 on the opposite side to the wafer 3 (the upper surface in the first drawing (c)). 9 The protective sheet 6 is uniformly heated uniformly while applying a force of π. For example, the protective sheet 6 is heated at 1 2 CTC for one minute. 22 201017744 When the protective sheet 6 is heated by the peeling member 9, In the adhesive of the protective sheet 6 The heat-expandable fine particles are swollen. Therefore, minute irregularities are generated on the surface of the layer formed of the adhesive, and the protective sheet 6 and the functional film 2 are changed from the state of the surface contact to the point contact. The result is 'protective sheet 6'. The contact area with the functional film 2 is reduced to greatly reduce the adhesive force of the protective sheet 6. Thus, the protective sheet 6 and the separation member 9 are together in a state where the protective sheet 6 is heated by the peeling member 9 to lower the adhesive force. The functional device 1 is peeled off. For example, the protective sheet 6 is sucked by the pores of the peeling member 9 and fixed. Next, the peeling angle member 9 and the security sheet 6 are lifted up. Accordingly, the protective sheet 6 is lifted. And the peeling member 9 is peeled off from the functional device i Q. Accordingly, the peeling step is as shown in the first figure (d), and can be made simpler without destroying the functional device 10 (specially Further, in the case where the ultraviolet ray-removable pressure-sensitive adhesive sheet is used as the protective sheet 6, in place of the heat treatment, the ultraviolet ray irradiation treatment for irradiating the protective sheet 6 with ultraviolet rays is changed. When the water-soluble peelable pressure-sensitive adhesive sheet is used as the protective sheet 6, instead of the heat treatment, the aqueous solution injection treatment for immersing the protective sheet 6 in a predetermined aqueous solution is carried out. As a result, the protective sheet 6 can be easily peeled off. After the removal step, after the stripping step, the useless organic matter attached to each functional device 1 Q is removed. Here, the useless organic substance is, for example, a photoresist such as a photoresist, a resin, an eucalyptus oil, or a co-solvent. In particular, in the case of the present embodiment, the adhesive of the protective sheet 6 (adhesive attached to the protective sheet 6 on the surface of the functional film 2) is organic. The useless organic matter of the adhesive containing such a protective sheet 6 can be removed by ozone. The ozone system can be formed by irradiating oxygen to a purple line or a high frequency microwave. For example, in the removal step in the present embodiment, the dry method of the ultraviolet ozone cleaning method (uv ozone cleaning method) is performed.

Reason. Further, the removal of step t can also facilitate the wet treatment of removing organic matter (organic contaminants) with ozone water. The method of ozone cleaning by the outside line is a method of removing unnecessary organic matter by irradiating ultraviolet rays of a short wavelength to the useless organic substance E. ’

The ultraviolet ozone cleaning method utilizes a short-wavelength ultraviolet light photooxidation process. Useless organic matter is broken down by absorbing short-wavelength outer lines. As a short-wavelength material, the wave is 184.9 nm ultraviolet light and ultraviolet light having a wavelength of 2 5 3 . nm. When oxygen molecules are irradiated with 丄8 4 · 9 ultraviolet rays, the oxygen molecules become ozone. When ozone is irradiated with ultraviolet rays having a wavelength of 2 5 3 7 nm, ozone is decomposed and oxygen is generated. 2 5 3 · 7 Money is absorbed by hydrocarbons and ozone. The four-phase system produced by the decomposition of organic matter by ultraviolet light reacts with active oxygen to form volatile molecules and is separated from the functional device. Through the irradiation of 1 8 4 · 9 11 „1 and 2 5 3 · 7′ m two wavelengths of ultraviolet ray elements continue to be produced, oxygen molecules are formed; 24 201017744 VIII, oxygen 'ozone is decomposed. In this ultraviolet ozone cleaning method In the inside of the frame, the sealing function device is installed, and the sealing treatment frame is provided, for example, i R. In the case of the sealing device, the low-hearted body of the wire is 1 to 2 inches JL/mi. The flow of oxygen in the frame is maintained (〇2 gas) - the force inside the frame of the 1 r treatment device is maintained as Changli.:,,::: The temperature inside the frame of the device should be closed and processed. Further between room temperature and 3 s η and 〇, 150 ° 〇. Perform purple d 5 0 C (for example, it should be set between 1 and 12 〇mi gas treatment time - 丄. However, in the removal step In the peeling step before the middle, it is separated. Therefore, the organic matter on both the inner surface of the slit 4 and the inner surface of the bore 5 is also removed together. The useless φ ^ ^ ^ tongue is so In the removal step, it is preferable to remove the inner surface of the slit 7 from the inner surface of the slit 4 and at least one of the inner surface of the hole 5 Further, it is better to remove (4) the useless objects on both the inner surface of the slit 4 and the inner surface of the Kongke 5. That is, in the removal of the cattle", i to the step _, it is desirable to have It is possible to adhere to the inner surface of the slit 4, the organic matter, the organic matter used, and the organic matter that may be attached. The organic matter that is removed from use is removed in the removal step, and the γ + , # It can be processed in this device] [Q for the photographic gray organic anti-caries agent, the ash, and the ash, and the ash is processed. When the ash 25 201017744 is processed, first, not shown The function device is arranged on the ash wafer holder! 腔.2 chamber: the oxygen is in the standard state 1~10QQee/] in the chamber cm) (for example, 2 cc/min (sm, 1 n ( sc — i# Iil: ^ C m )) — The pressure in the non-two-chamber chamber is set to η,” (in the case of chamber, Γ2). Secondly, the temperature of the wafer holder is stabilized by shot = (for example, 180. Then, after ==1〇〇~1KW (for example, 45〇W) is supplied to Q(4)(^'6()(4)) to perform the ashing step, the step is performed. The step (the dicing stripping step can be performed in the step, for example, using a wafer holder to separate the wafer from the dicing sheet 7). Accordingly, as shown in the first figure (〇: each can be obtained The plurality of functions are divided into a plurality of functional agricultural facilities. Second, each functional device 10 can be used for a semiconductor device (refer to the sixth figure), etc. Lu Libu = the upper Wei device (four) manufacturing method has a wafer::, The attaching step, the cutting step, the stripping step, and the removing step; in the wafer processing step, in the base-wafer of the substrate 1: the two surfaces 3a form the functional film 2. After the post-wafer processing step, a surface of the wafer 3 is attached to the surface of the wafer 3 with the adhesive:: the sheet 7 is attached to the other surface 3b of the wafer 3. In the middle, after the attaching step, under the uncut cut piece 7 26 201017744 The protective sheet 6 and the wafer 3 are cut and the wafer 3 is divided into a plurality of functional devices 10 respectively. In the peeling step, after the cutting step, the protective sheet 6 is peeled off from each functional device 1 . In the removing step, after the peeling step, the adhesive of the protective sheet 6 which is an unnecessary organic substance adhering to each functional device i is removed. According to the manufacturing method of the functional device, since the wafer 3 is cut by the protective sheet 6 and the cut (four) 7, the function (4) 2 is prevented from being broken at the time of cutting, and the yield can be improved. Further, since the adhesive of the organic matter-protecting sheet 6 attached to the functional device 10 can be removed, it is possible to prevent the performance of the device 10 from being deteriorated due to the adhesion of such organic substances. Particularly in the case where the functional device process is an infrared sensor, it is possible to prevent a change in thermal characteristics due to the adhesion of the protective sheet 6. Therefore, it is possible to prevent the sensitivity of the infrared sensation from being lowered. Furthermore, a plurality of infrared sensors are formed to have uniform sensing characteristics. Further, in the removing step, the useless organic matter adhering to at least one of the inner surface of the slit 4 and the inner surface of the hole 5 is removed. Therefore, since it is possible to remove the useless organic matter adhering to the inner surface of the slit 4 and the hole 5 of the functional device, it is possible to prevent the performance of the functional device 10 from deteriorating due to the adhesion of the organic matter. Thus, the performance of the functional device 10 can be improved. Further, in the peeling step, after the peeling member g is placed on the surface of the protective sheet 6 opposite to the wafer 3, the protective sheet 6 and the peeling member 9 are peeled off from the functional device 10. Therefore, 27 201017744 can reduce costs. Further, the 'protective sheet 6' is a heat-peelable adhesive sheet using an adhesive whose adhesive force is lowered by heating. Therefore, the protective sheet 6 can be easily peeled off from the functional device 10 by the addition of the demon protection sheet 6. Therefore, the functional film 2 can be prevented from being damaged when the protective sheet 6 is peeled off. In the peeling step, 'before the protective sheet 6 is peeled off from the functional device 10', the protective sheet 6 is uniformly heated while applying pressure to the protective sheet 6 in a uniform manner. Therefore, it is possible to prevent the protective sheet 6 from being broken when the protective sheet 6 is peeled off. Therefore, the protective sheet 106 can be surely peeled off from the functional film 2. Further, the functional device 1 is not limited to the above-described infrared array sensor. The functional device i 0 can also be, for example, an acceleration sensor (one-axis to three-axis acceleration sensor) or a gyro sensor, a pressure sensor, a microactuator, a microphone, and an ultrasonic sensor. (Second Embodiment) Fig. 6 is a view showing a semiconductor device 10 manufactured by the method of manufacturing a semiconductor device of the present embodiment. The semiconductor device 1 〇 0 includes a functional device 10 and a signal processing device 33 formed of an I C chip. Further, the semiconductor device 1 is provided with a package 40 that houses the functional device 1 and the signal processing device 33 as shown in Fig. 5(c). The signal processing device 3 3 is constructed in cooperation with the infrared sensor-function device 10. The signal processing device 3 3 has a plurality of (four in the illustrated example) input pads 3 1 ( 3 1 1 28 201017744 to 3 1 4), and a pad 3 2 . Each of the input pads 3 1 1 to 3 1 4 is electrically connected to a plurality of (four in the example) output pads 2 4 i to 2 4 4 of the functional device 1 through the wiring 35. The pad 3 2 is used to apply a reference voltage to the reference bias pad 26 of the functional device 2 。. The pad 3 2 is electrically connected to the reference bias pad via the wiring 35; The wiring 3 5 is, for example, a bonding wire using gold or aluminum (b 0 ndingw . re ). Further, the signal processing device 33 includes an amplifying circuit 42 for amplifying the output voltage of the input port 31; and a plurality of The output voltage of the input pad 3 1 is alternatively input to the multiplexer 4 1 of the amplifying circuit 4.2. As far as the processing device 3 3 is concerned, the output voltage of each output pad 24 from the functional device 1 is outputted in sequence. If the = number processing device 33 is used, the infrared ray image processing device 3 3 system and the Wei device can be obtained! Q is divided into two, but it can also be formed by using the substrate 1 which can be mounted one turn. That is, the signal processing device 33 can also be integrally provided to the functional device i. The 唬 package 4 〇 ' is composed of a metal substrate 36 made of a functional packaging device 3 3 and a "bend enclosing function device 10 and a signal processing body 36. The substrate 36 is formed on one side (" The rectangular shape of 39 is formed on the inner bottom surface of the base member 36 and the signal processing device 33. ^ ^ 1 mesh 盍 3 9 is formed into a rectangular plate shape of the size of the opening of the base member 36. The functional device 10 is a case of an infrared sensor, and the material of the cap 39 is made of an infrared permeable material (for example, 矽). Further, in the case where the functional device 1 is a visible light sensor, the cap 3 The material of 9 is made of a material that is transparent to visible light (for example, glass). In the case where the functional device 1 is an acceleration sensor, the material of the cap 39 can be made of a metal material. Thus, the cap Cover 3 g

The material may be a material that does not interfere with the characteristics of the functional device i. 0. When the semiconductor device 100 is driven, for example, the reference bias of the functional device i is via the pad 3 2 of the signal processing device 33. Pad 2 6 is assigned a reference voltage (e.g., i · 6 5 v ). In this way, the functional element 3 is output from each of the output pads 24

The output voltage (1 · 6 5 V + the output of the sensing element 2 ,, voltage). The output voltage from each of the output pads 24 is input to the corresponding input pad 31 of the signal processing device 3 3 . The multiplexer 4 1 of the signal processing device f 3 3 selectively inputs the output voltages of the plurality of input pads 3 i to the amplifying circuit 42. According to this, an infrared image which is an output of the attack device 1 can be obtained. Next, a method of manufacturing the semiconductor device of the present embodiment will be described with reference to the fifth embodiment. The method of manufacturing a semiconductor device includes a wafer processing step, a attaching step 'cutting step, stripping step, removing step, separating step, constitution step, washing step, and sealing step. 30 201017744 In the method of manufacturing a semiconductor device of the present embodiment, first, the wafer processing step. This wafer processing step has been described in the first embodiment, and therefore the description is omitted. After the wafer processing step, the attaching step, the dicing step, the stripping step, the removing step, and the separating step are carried out in the same manner as in the first embodiment. Next, the construction step is carried out after the separation step. Further, the attaching step, the cutting step, the peeling step, the removing step, and the separating step have been described in the first embodiment, and thus the description thereof will be omitted. In the structuring step, the functional device is mounted to the substrate 36 using a first adhesive. Specifically, the other surface (the lower surface in the fifth diagram (a)) of the thickness direction of the substrate 1 of the functional device 1 is bonded to the inner bottom surface of the substrate 36 by a first adhesive. Further, in the structuring step, the signal processing device 3 3 is attached to the substrate 36 using a first adhesive. Specifically, the back surface (the lower one in the fifth diagram) of the first signal processing device 33 is joined to the inner bottom surface of the base 36. Accordingly, as shown in FIG. 5 (the first 10 and the signal processing device 33 are respectively configured by the first bonding layer formed by the sitter (the ampule 7 is mounted on the substrate 3 〇 〇 layer) 3 2::::= etc. One:: The agent can be used except for the 'first-adhesive agent, which can also use epoxy resin. However, if degassing is considered, the first adhesive should be inorganic material 201017744. 1A and the signal processing device 3 3 are mounted on the base 36, and the output pads 2 4 1 to 2 44 of the functional device 1 are connected to the corresponding input pads 3 of the signal processing device 3 3 by the wiring 35. 1 1 to 3 1 4. Further, the reference bias pad 26 of the functional device 1 连接 is connected to the pad 32 of the signal processing device 33 by the wiring 35. Further, in the 'semiconductor device i ,, the functional device process The outer peripheral shape of the substrate 1 is a rectangular shape. At the end portion on the first side of the outer periphery of the substrate i, the output pads 2 4 1 to 2 for taking out all of the sleek output # of the functional element 3 〇 are taken out. 4 4 and the reference bias pad 2 6 'is juxtaposed along the first side of the substrate work. Further 'signal processing device 3 3 The outer peripheral shape is a rectangular shape. At the end portion on the second side of the outer circumference of the signal processing device 3 3, all of the input pads 3 1 1 to 3 1 4 and the pad 3 2 are along the above-described first portion of the signal processing device 3 3 . The functional device 1 is mounted such that the distance between the first side of the substrate 1 and the first side of the signal processing device 33 is closer than the distance from either side of the signal processing device 3 3 . In the case of the package 4', it is possible to shorten the wiring 35 for the input pad 2 4 of the connection function device 10 and the input pad 31 for the letter processing device 3 3 . The reference bias voltage of 1 〇 is 12 6 and the wiring 3 5 of the pad 3 2 of the signal processing device 33. Accordingly, the influence of the external noise can be reduced, and the noise resistance can be improved. Here, it is preferable to remove the noise from the substrate before the sealing step. 3 6 and cap 32 201017744 3 9 Remove organic contaminants. Then 'after the sealing step, the cleaning step is carried out before the sealing step. In the cleaning step, the useless organic matter is removed from the substrate 36 and the cap 39. Ashing treatment is carried out in the washing step. The ashing treatment is considered The functional device 1 置于 placed in the base 36, the size of the signal processing device 33, the functional device 1 〇, the number of signal processing devices 3 3, the functional device i 〇, and the material used in the signal processing device 3 3 In the ashing treatment, for example, a photoexcitation ashing treatment using an ozone ashing apparatus or a plasma ashing apparatus may be employed. Further, the washing step may be performed before the structuring step. The loading step can also be carried out before the removing step. In this case, in the removing step, the organic matter attached to the substrate 3 is removed. Specifically, after the wafer processing step, the attaching step and the dicing step and the stripping step are performed after the separating step i. Next, the structuring step is performed after the separating step, and then the removing step is performed. By the order of the changing steps, the useless "machines can be simultaneously removed from both the functional device 1 and the structural substrate 36. In this case, it is also possible to remove the waste, and remove the useless organic matter from the cap 39. Further, at least one of the stepped material base 36 and the cap 39 is removed to remove unnecessary organic matter. In addition, it is also desirable to use the signal processing device 3 from the machine. In the process of removing the useless organic matter from the signal processing device 3 3|m..., it is also possible to use the substrate in the above-mentioned step (4) for removing the (4), from the step of washing, from 33 201017744 ::裴f1 〇, the substrate 3 6 or the cap 3 9 removes the organic matter and pushes it together; ^ + can also be carried out separately. However, it is necessary to remove the organic matter from the signal processing device 33 in the sealing step λ: In the Gutianzhe sealing step, after the removal step and the construction step, the two adhesives bond the caps 39 to the substrate 36 and hermetically seal the function at the seal. Specifically, a second adhesive is applied to the opening edge of the one side of the body 36. Thereafter, the cap 39 is placed on the one side of the base 36, and the opening of the above-mentioned surface of the base 36 is covered. Accordingly, as for the fifth ® :C), the cap 39 is joined to the base 3 6 利用 by a bonding layer (sealing adhesive layer) 38 formed of a second adhesive, for example, a second adhesive such as It is glass. The second adhesive may use, in addition to glass, an inorganic material such as solder or human u-s i. Further, as the second adhesive, an organic material such as an m-oxygen resin can also be used. However, considering degassing right, the second adhesive is preferably an inorganic material. Further, in the sealing step, the cap 39 is joined to the base 36 to make the inside of the package 4Q a vacuum. For example, after the ashing treatment in the removing step and the washing step, the package 4 is vacuumed in such a manner that the oxygen enthalpy flowing during the ashing in the vacuum processing apparatus is stopped so that the inside of the package 4 is not contaminated. seal. Alternatively, in the sealing step, the cap 39 may be joined to the base member 36 to make the inside of the package 4 into a positive pressure. For example, instead of the ashing treatment in the removal step and the cleaning step, the flow of the gas is changed to a gas that does not substantially affect even if it is exposed to each functional device (for example, inert gas such as Ar gas). The gas or nitrogen (N 2 )) is sealed in the package 4 in a pressurized state. Accordingly, the inside of the package 40 is set to a positive pressure. As described above, the manufacturing method of the semiconductor device of the present embodiment includes a wafer processing step, a attaching step, a dicing step, a peeling step, a removing step, a separating step, a structuring step, a washing step, and a sealing step. In the wafer processing step, a functional film 2 is formed on a surface 3a of the substrate-wafer 3 of the substrate. In the attaching step, after the wafer processing step, the adhesive sheet-protecting sheet 6 with the dose is directly attached to the surface 3a' of the wafer 3 while the dicing sheet 7 is attached to the wafer 3. The other surface 3 b. In the cutting step, after the attaching step, the protective sheet 6 and the wafer 3 are cut off and the wafer 3 is divided into a plurality of functions Q under the uncut cutting month 7. In the stripping step, after the cutting step, the protective sheet b is peeled off from each function #分力月b. In the removing step, after the step of peeling off the traces, the useless organic substances adhering to the respective functional devices 1 containing the protective sheet of the adhesive sheet, the adhesive agent, and the adhesive agent are removed. In the separation step, set to 10. In the 槿奘 槿奘 i i i 各 各 各 各 各 各 各 各 各 各 各 各 各 各 各 各 各 各 各 各 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于After washing 9 and removing useless organic stains _==36 and cap 3 Fengniu β battle in the sealing step, after the descending step and the construction step, the system Τ% will be replaced by a second adhesive The cap 3 35 201017744 9 is joined to the base 36 and hermetic seal is sealed in the package 4 . According to the method of manufacturing a semiconductor device of the embodiment, it is possible to remove organic contaminants, that is, useless organic substances (adhesives for the protective sheet 6) attached to the functional device 1 from the sealing (4) 40, and to adhere to the substrate 36 and the cap. Organic matter of 39, organic matter attached to the signal processing device 33. Therefore, it is possible to prevent the performance of the functional device iQ from being lowered due to the adhesion of unnecessary organic substances, for example, in the case where the functional device 1 () is an infrared sensor, the infrared penetrating property is caused by degassing from an organic substance or the like. Asianization. Therefore, the performance of the semiconductor device 1 can be prevented from being lowered. Further, in the sealing step, the cap 39 is joined to the base 3 to make the inside of the package 40 into a vacuum or a positive pressure. In this case, the useless organic matter is removed from the device i, and there is no change in the pressure in the package 40 due to the degassing of the device: : preventing the performance degradation of the semiconductor device 1 : In the vacuum inside the crucible, the package can be removed, and the semiconductor device 1 can be improved. (4) The positive pressure is set in 4Q, and the gas outside the package 胄40 such as large milk does not flow. Therefore, the reliability of the semiconductor device 1 can be improved. Moreover, since the first adhesive and the second inorganic material are formed, even in the case of encapsulation: = mode, it can be eliminated from the first adhesive and the second adhesive due to the situation from the rolling. 36 201017744 Degassing and changing internal pressure. Since the adhesion to the substrate 3 is removed, the semiconductor can be prevented because the performance of the organic device 1 at least 6 with the cap 39 is lowered before the sealing step. The steps are carried out before the removal of the bovine/pre-step. So: the organic plant attached to the base 3 6 in the factory is in the device 1 〇 is mounted on the base 3 6 $

Thereafter, the right side of the blood of the functional device can be removed at the same time: the body of the f6, the organic substance and the base in..., thereby preventing the performance of the semiconductor device 1 from being lowered and improving the yield. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a process diagram of a method of the present invention. The function of the implementation

The second figure shows the functional devices as above, (a) is a schematic diagram, and (b) is an equivalent circuit diagram. The third figure shows the functional device of the same, and (a) is an enlarged view of the figure (b) in the same line as the a-a line of the figure (a). The fourth figure is a diagram of the manufacturing method of the functional device of the above. Fig. 5 is a process chart showing a method of manufacturing a semiconductor device according to an embodiment of the present invention. The sixth drawing is a schematic plan view of a semiconductor device having the same functional device. 37 201017744 The seventh diagram is an explanatory diagram of the same semiconductor device. [Main component symbol description] 33 a 3 b 45678910 2 Substrate Functional film Wafer Surface Surface Slit hole Hole Protective sheet Cutting sheet Groove Peeling member Functional device Cerium oxide film Tantalum nitride film

13 η-type polysilicon layer 14 η-type compensation complex 矽 layer 15 ρ-type compoundite layer 16 ρ-type compensation complex layer 17 layer 17 interlayer insulating film 18 wiring 19 passivation film 38 201017744 〇❹ 2 0 2 1 2 2 2 3 2 4 2 4 1 2 5 2 6 2 7 2 8 2 9 3 0 3 1 3 11 3 2 3 7 3 8 3 9 4 0 4 1 4 2 Sensing element Infrared absorber infrared absorbing film connection layer output塾2 4 4 Output pad contact hole reference bias pad vertical readout line reference bias line common reference bias line functional element input pad 314 input pad signal processing device wiring substrate first bonding layer second bonding Layer cap package multiplexer amplifying circuit 39 201017744 10 0 Semiconductor device 2 0 0 Thermocouple

Claims (1)

201017744 VII. Patent application scope: A manufacturing method of a functional device, comprising: a substrate; and a functional film formed on the substrate and having a predetermined function, and a hole is formed in the substrate for The method for manufacturing the above-mentioned substrate and the functional film is characterized in that: a wafer processing step comprises: forming a functional film on a surface of one of the substrates based on the substrate; a attaching step of directly attaching a protective sheet with an adhesive to a surface of the wafer after the wafer processing step, and attaching the dicing sheet to the other surface of the wafer; After the attaching step, the protective sheet and the wafer are divided into a plurality of functional devices under the uncut® dicing sheet; a stripping step, after the cutting step, Removing the protective sheet from each of the functional devices; and removing the step, after the stripping step, removing the adhesion Useless means of the functional organic material comprising the protective sheet of the adhesive. 2. The method of manufacturing a functional device according to claim 1, wherein the functional device has a slit that penetrates the thickness direction of the functional film and communicates with the hole, in the removing step. Unwanted organic matter adhering to at least one of the inner surface of the slit and the inner surface of the hole is removed. 3. The method of manufacturing a functional device according to claim 1, wherein in the peeling step, after the peeling member is attached to a surface of the protective sheet opposite to the wafer, the protective sheet and the protective sheet are The peeling members are peeled off together from the above functional device. The method of manufacturing the functional device according to the first aspect of the invention, wherein the protective sheet is a heat-peelable adhesive sheet of an adhesive which reduces adhesion by heating. 5. The method of manufacturing a functional device according to claim 4, wherein in the peeling step, before the protective sheet is peeled off from the functional device, the protective sheet is uniformly and uniformly applied with a pressure of The protective sheet is uniformly heated. A method of manufacturing a semiconductor device comprising: a functional device; and a package accommodating the functional device, wherein the functional device includes a substrate and a functional thin film having a predetermined function formed on the substrate, and the substrate Forming a hole 42 201017744 / the same for spatially separating the substrate and the functional film, the package is composed of a base body on which the functional device is mounted, and a cap that surrounds the functional device with the base body, » The method for manufacturing a semiconductor device includes: a wafer processing step of forming the functional film on a surface of one of the substrates on which the substrate is based; and an attaching step after the wafer processing step Applying a protective sheet having an adhesive directly to a surface of the wafer while attaching the dicing sheet to the other surface of the wafer; a cutting step, after the attaching step, is not cut The protective sheet and the wafer are divided into the plurality of functions described above under the dicing sheet a peeling step of peeling off the protective sheet from each of the functional devices after the cutting step; _ removing step, after the peeling step, removing the adhesive containing the protective sheet attached to each of the functional devices a useless organic substance; a step of structuring, after the dicing step, constructing the functional device on the substrate using a first adhesive; and/or a sealing step, using a second adhesive after the removing step and the structuring step Bonding the cap to the base body hermetically seals the functional device in the package. The method of manufacturing a semiconductor device according to claim 6, wherein in the sealing step, the cap is joined to the substrate to cause a vacuum or a positive pressure in the package. The method of manufacturing a semiconductor device according to claim 7, wherein at least one of the first adhesive and the second adhesive is made of an inorganic material. The method for manufacturing a semiconductor device according to Item 6, wherein the organic substance adhering to at least one of the caps of the base spot is removed before the sealing step. Set: The semiconductor package described in item 6 of the scope is 2==:; before proceeding to the step _, the machine. Remove the attached body from the above substrate.