WO2010035944A3 - 발광 장치 - Google Patents

발광 장치 Download PDF

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Publication number
WO2010035944A3
WO2010035944A3 PCT/KR2009/003773 KR2009003773W WO2010035944A3 WO 2010035944 A3 WO2010035944 A3 WO 2010035944A3 KR 2009003773 W KR2009003773 W KR 2009003773W WO 2010035944 A3 WO2010035944 A3 WO 2010035944A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
chip
reflection
gold
mounting unit
Prior art date
Application number
PCT/KR2009/003773
Other languages
English (en)
French (fr)
Other versions
WO2010035944A2 (ko
Inventor
조유정
김경남
오광용
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090061691A external-priority patent/KR100941857B1/ko
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Publication of WO2010035944A2 publication Critical patent/WO2010035944A2/ko
Publication of WO2010035944A3 publication Critical patent/WO2010035944A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

발광 효율을 향상시킬 수 있는 발광 장치가 개시되어 있다. 발광 장치는 광을 발생시키는 발광 칩, 발광 칩이 실장되는 칩 실장부, 칩실장부의 외주면 상의 적어도 일부 영역에 형성된 반사층 및 상기 반사층의 외주면 상에 금 고유의 색이 나타나지 않는 두께의 박막으로 코팅된 금 도금층을 포함한다. 칩 실장부는 리드 단자, 슬러그, 인쇄회로기판, 세라믹 기판, CNT 기판 등으로 이루어질 수 있다. 이와 같이, 발광 칩이 실장되는 칩 실장부 상에 반사율이 높은 반사층을 형성하고, 반사층 상에 반사층의 부식을 방지하기 위한 금 도금층을 얇은 두께로 형성함으로써, 반사층의 반사율 저하를 억제하고 반사층의 부식을 효율적으로 방지할 수 있다.
PCT/KR2009/003773 2008-09-29 2009-07-09 발광 장치 WO2010035944A2 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0095458 2008-09-29
KR20080095458 2008-09-29
KR1020090061691A KR100941857B1 (ko) 2008-09-29 2009-07-07 발광 장치
KR10-2009-0061691 2009-07-07

Publications (2)

Publication Number Publication Date
WO2010035944A2 WO2010035944A2 (ko) 2010-04-01
WO2010035944A3 true WO2010035944A3 (ko) 2010-05-27

Family

ID=42056422

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/003773 WO2010035944A2 (ko) 2008-09-29 2009-07-09 발광 장치

Country Status (2)

Country Link
US (1) US20100078669A1 (ko)
WO (1) WO2010035944A2 (ko)

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US8610156B2 (en) * 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
DE102010020211A1 (de) * 2010-05-10 2011-11-10 Osram Opto Semiconductors Gmbh Träger für ein optoelektronisches Bauelement, optoelektronische Vorrichtung mit einem Träger und Verfahren zur Herstellung eines Trägers für ein optoelektronisches Bauelement
DE102010023955A1 (de) * 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
TWM401871U (en) * 2010-09-14 2011-04-11 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
JP5338788B2 (ja) * 2010-11-10 2013-11-13 船井電機株式会社 レーザホルダ、及び、それを備えた光ピックアップ
US10267506B2 (en) 2010-11-22 2019-04-23 Cree, Inc. Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same
TW201250964A (en) * 2011-01-27 2012-12-16 Dainippon Printing Co Ltd Resin-attached lead frame, method for manufacturing same, and lead frame
DE102011083691B4 (de) * 2011-09-29 2020-03-12 Osram Gmbh Optoelektronisches halbleiterbauteil
JP6078948B2 (ja) * 2012-01-20 2017-02-15 日亜化学工業株式会社 発光装置用パッケージ成形体及びそれを用いた発光装置
US9806246B2 (en) 2012-02-07 2017-10-31 Cree, Inc. Ceramic-based light emitting diode (LED) devices, components, and methods
US9786825B2 (en) 2012-02-07 2017-10-10 Cree, Inc. Ceramic-based light emitting diode (LED) devices, components, and methods
US8895998B2 (en) * 2012-03-30 2014-11-25 Cree, Inc. Ceramic-based light emitting diode (LED) devices, components and methods
US9538590B2 (en) 2012-03-30 2017-01-03 Cree, Inc. Solid state lighting apparatuses, systems, and related methods
USD738542S1 (en) 2013-04-19 2015-09-08 Cree, Inc. Light emitting unit
JP6232792B2 (ja) * 2013-07-17 2017-11-22 日亜化学工業株式会社 発光装置
CN106796976B (zh) * 2014-10-08 2019-04-19 首尔半导体株式会社 发光装置
US9826581B2 (en) 2014-12-05 2017-11-21 Cree, Inc. Voltage configurable solid state lighting apparatuses, systems, and related methods
US9859481B2 (en) * 2014-12-22 2018-01-02 Nichia Corporation Light emitting device
US9590158B2 (en) 2014-12-22 2017-03-07 Nichia Corporation Light emitting device
US10626012B2 (en) * 2015-04-13 2020-04-21 Infineon Technologies Ag Semiconductor device including a cavity lid
JP6471641B2 (ja) * 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置の製造方法
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
CN108538877B (zh) * 2018-05-17 2020-09-01 深圳市华星光电技术有限公司 Micro LED显示面板的制作方法
KR102559294B1 (ko) * 2018-05-28 2023-07-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
JP7148792B2 (ja) * 2018-09-27 2022-10-06 日亜化学工業株式会社 光半導体装置用金属材料、及びその製造方法、及びそれを用いた光半導体装置
JP6675032B1 (ja) * 2019-07-08 2020-04-01 御田　護 半導体発光装置

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Also Published As

Publication number Publication date
US20100078669A1 (en) 2010-04-01
WO2010035944A2 (ko) 2010-04-01

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