WO2010035944A3 - Dispositif électroluminescent - Google Patents
Dispositif électroluminescent Download PDFInfo
- Publication number
- WO2010035944A3 WO2010035944A3 PCT/KR2009/003773 KR2009003773W WO2010035944A3 WO 2010035944 A3 WO2010035944 A3 WO 2010035944A3 KR 2009003773 W KR2009003773 W KR 2009003773W WO 2010035944 A3 WO2010035944 A3 WO 2010035944A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- chip
- reflection
- gold
- mounting unit
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
La présente invention concerne un dispositif électroluminescent qui est capable d'augmenter l'efficacité de l'électroluminescence. Ce dispositif électroluminescent comprend: un microcircuit électroluminescent qui génère la lumière; un module de montage de microcircuit sur lequel est monté le microcircuit électroluminescent; un élément réflecteur occupant au moins une région définie de la surface extérieure du module de montage de microcircuit; et, sur la surface extérieure de la couche de réflexion, un plaquage or suffisamment mince pour cacher la couleur inhérente de l'or. Le module de montage de microcircuit peut s'intégrer notamment à une borne de conducteur, à un bouchon, à une carte à circuit imprimé, à un substrat céramique, ou à un substrat à nanotubes de carbone. Avec l'invention, on évite de faire baisser le coefficient de réflexion de la couche de réflexion pendant la formation de la couche de réflexion à coefficient de réflexion élevé sur le module de montage du microcircuit sur lequel est monté le microcircuit électroluminescent. En outre, le mince plaquage or sur la couche de réflexion prévient l'érosion de la couche de réflexion.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0095458 | 2008-09-29 | ||
KR20080095458 | 2008-09-29 | ||
KR10-2009-0061691 | 2009-07-07 | ||
KR1020090061691A KR100941857B1 (ko) | 2008-09-29 | 2009-07-07 | 발광 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010035944A2 WO2010035944A2 (fr) | 2010-04-01 |
WO2010035944A3 true WO2010035944A3 (fr) | 2010-05-27 |
Family
ID=42056422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/003773 WO2010035944A2 (fr) | 2008-09-29 | 2009-07-09 | Dispositif électroluminescent |
Country Status (2)
Country | Link |
---|---|
US (1) | US20100078669A1 (fr) |
WO (1) | WO2010035944A2 (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8288785B2 (en) * | 2008-12-03 | 2012-10-16 | Seoul Semiconductor Co., Ltd. | Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode |
US8610156B2 (en) * | 2009-03-10 | 2013-12-17 | Lg Innotek Co., Ltd. | Light emitting device package |
DE102010020211A1 (de) * | 2010-05-10 | 2011-11-10 | Osram Opto Semiconductors Gmbh | Träger für ein optoelektronisches Bauelement, optoelektronische Vorrichtung mit einem Träger und Verfahren zur Herstellung eines Trägers für ein optoelektronisches Bauelement |
DE102010023955A1 (de) * | 2010-06-16 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
TWM401871U (en) * | 2010-09-14 | 2011-04-11 | Hon Hai Prec Ind Co Ltd | Light emitting diode lead frame |
JP5338788B2 (ja) * | 2010-11-10 | 2013-11-13 | 船井電機株式会社 | レーザホルダ、及び、それを備えた光ピックアップ |
US10267506B2 (en) | 2010-11-22 | 2019-04-23 | Cree, Inc. | Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same |
TW201250964A (en) | 2011-01-27 | 2012-12-16 | Dainippon Printing Co Ltd | Resin-attached lead frame, method for manufacturing same, and lead frame |
DE102011083691B4 (de) * | 2011-09-29 | 2020-03-12 | Osram Gmbh | Optoelektronisches halbleiterbauteil |
JP6078948B2 (ja) * | 2012-01-20 | 2017-02-15 | 日亜化学工業株式会社 | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
US9786825B2 (en) | 2012-02-07 | 2017-10-10 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
US9806246B2 (en) | 2012-02-07 | 2017-10-31 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
US8895998B2 (en) * | 2012-03-30 | 2014-11-25 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components and methods |
US9538590B2 (en) | 2012-03-30 | 2017-01-03 | Cree, Inc. | Solid state lighting apparatuses, systems, and related methods |
USD738542S1 (en) | 2013-04-19 | 2015-09-08 | Cree, Inc. | Light emitting unit |
JP6232792B2 (ja) * | 2013-07-17 | 2017-11-22 | 日亜化学工業株式会社 | 発光装置 |
US10811572B2 (en) * | 2014-10-08 | 2020-10-20 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US9826581B2 (en) | 2014-12-05 | 2017-11-21 | Cree, Inc. | Voltage configurable solid state lighting apparatuses, systems, and related methods |
US9859481B2 (en) * | 2014-12-22 | 2018-01-02 | Nichia Corporation | Light emitting device |
US9590158B2 (en) | 2014-12-22 | 2017-03-07 | Nichia Corporation | Light emitting device |
US10626012B2 (en) * | 2015-04-13 | 2020-04-21 | Infineon Technologies Ag | Semiconductor device including a cavity lid |
JP6471641B2 (ja) * | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
CN108538877B (zh) * | 2018-05-17 | 2020-09-01 | 深圳市华星光电技术有限公司 | Micro LED显示面板的制作方法 |
KR102559294B1 (ko) * | 2018-05-28 | 2023-07-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
JP7148792B2 (ja) * | 2018-09-27 | 2022-10-06 | 日亜化学工業株式会社 | 光半導体装置用金属材料、及びその製造方法、及びそれを用いた光半導体装置 |
JP6675032B1 (ja) * | 2019-07-08 | 2020-04-01 | 御田 護 | 半導体発光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072158A (ja) * | 2003-08-22 | 2005-03-17 | Hitachi Aic Inc | 発光素子用基板 |
JP2006269667A (ja) * | 2005-03-23 | 2006-10-05 | Sumitomo Electric Ind Ltd | 光反射膜およびそれを用いた発光ダイオード用パッケージ |
WO2006126809A1 (fr) * | 2005-05-26 | 2006-11-30 | Luxpia Co., Ltd. | Tres petit boitier pour diode electroluminescente et son procede de fabrication |
JP2007234818A (ja) * | 2006-02-28 | 2007-09-13 | Toshiba Lighting & Technology Corp | 発光装置 |
Family Cites Families (14)
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CA875093A (en) * | 1971-07-06 | The Government Of The United States Of America As Represented By The Sec Retary Of The Army | High efficiency stable reflecting surface | |
US4713824A (en) * | 1983-02-11 | 1987-12-15 | Allied Corporation | Noble-metal overcoated, front-surface silver reflectors |
US5139890A (en) * | 1991-09-30 | 1992-08-18 | Olin Corporation | Silver-coated electrical components |
US6544616B2 (en) * | 2000-07-21 | 2003-04-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US6181226B1 (en) * | 1999-11-05 | 2001-01-30 | Siemens Energy & Automation, Inc. | Bi-metal trip unit for a molded case circuit breaker |
WO2001059851A1 (fr) * | 2000-02-09 | 2001-08-16 | Nippon Leiz Corporation | Source lumineuse |
US6797463B2 (en) * | 2000-02-16 | 2004-09-28 | Wisconsin Alumni Research Foundation | Method and apparatus for detection of microscopic pathogens |
JP4381574B2 (ja) * | 2000-08-17 | 2009-12-09 | 日鉱金属株式会社 | 積層板用銅合金箔 |
US6949771B2 (en) * | 2001-04-25 | 2005-09-27 | Agilent Technologies, Inc. | Light source |
CN1326134C (zh) * | 2002-06-28 | 2007-07-11 | 威廉斯高级材料公司 | 包含防腐银合金的光学数据存储器和可记录存储媒体 |
US7692277B2 (en) * | 2003-01-16 | 2010-04-06 | Panasonic Corporation | Multilayered lead frame for a semiconductor light-emitting device |
JP4830768B2 (ja) * | 2006-05-10 | 2011-12-07 | 日亜化学工業株式会社 | 半導体発光装置及び半導体発光装置の製造方法 |
EP1928026A1 (fr) * | 2006-11-30 | 2008-06-04 | Toshiba Lighting & Technology Corporation | Dispositif d'éclairage doté d'éléments luminescents semi-conducteurs |
US20130174900A1 (en) * | 2011-07-07 | 2013-07-11 | Stion Corporation | Nanowire enhanced transparent conductive oxide for thin film photovoltaic devices |
-
2009
- 2009-07-09 WO PCT/KR2009/003773 patent/WO2010035944A2/fr active Application Filing
- 2009-09-29 US US12/569,208 patent/US20100078669A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072158A (ja) * | 2003-08-22 | 2005-03-17 | Hitachi Aic Inc | 発光素子用基板 |
JP2006269667A (ja) * | 2005-03-23 | 2006-10-05 | Sumitomo Electric Ind Ltd | 光反射膜およびそれを用いた発光ダイオード用パッケージ |
WO2006126809A1 (fr) * | 2005-05-26 | 2006-11-30 | Luxpia Co., Ltd. | Tres petit boitier pour diode electroluminescente et son procede de fabrication |
JP2007234818A (ja) * | 2006-02-28 | 2007-09-13 | Toshiba Lighting & Technology Corp | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US20100078669A1 (en) | 2010-04-01 |
WO2010035944A2 (fr) | 2010-04-01 |
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