WO2010035944A3 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2010035944A3
WO2010035944A3 PCT/KR2009/003773 KR2009003773W WO2010035944A3 WO 2010035944 A3 WO2010035944 A3 WO 2010035944A3 KR 2009003773 W KR2009003773 W KR 2009003773W WO 2010035944 A3 WO2010035944 A3 WO 2010035944A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
chip
reflection
gold
mounting unit
Prior art date
Application number
PCT/KR2009/003773
Other languages
English (en)
Korean (ko)
Other versions
WO2010035944A2 (fr
Inventor
조유정
김경남
오광용
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090061691A external-priority patent/KR100941857B1/ko
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Publication of WO2010035944A2 publication Critical patent/WO2010035944A2/fr
Publication of WO2010035944A3 publication Critical patent/WO2010035944A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un dispositif électroluminescent qui est capable d'augmenter l'efficacité de l'électroluminescence. Ce dispositif électroluminescent comprend: un microcircuit électroluminescent qui génère la lumière; un module de montage de microcircuit sur lequel est monté le microcircuit électroluminescent; un élément réflecteur occupant au moins une région définie de la surface extérieure du module de montage de microcircuit; et, sur la surface extérieure de la couche de réflexion, un plaquage or suffisamment mince pour cacher la couleur inhérente de l'or. Le module de montage de microcircuit peut s'intégrer notamment à une borne de conducteur, à un bouchon, à une carte à circuit imprimé, à un substrat céramique, ou à un substrat à nanotubes de carbone. Avec l'invention, on évite de faire baisser le coefficient de réflexion de la couche de réflexion pendant la formation de la couche de réflexion à coefficient de réflexion élevé sur le module de montage du microcircuit sur lequel est monté le microcircuit électroluminescent. En outre, le mince plaquage or sur la couche de réflexion prévient l'érosion de la couche de réflexion.
PCT/KR2009/003773 2008-09-29 2009-07-09 Dispositif électroluminescent WO2010035944A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0095458 2008-09-29
KR20080095458 2008-09-29
KR10-2009-0061691 2009-07-07
KR1020090061691A KR100941857B1 (ko) 2008-09-29 2009-07-07 발광 장치

Publications (2)

Publication Number Publication Date
WO2010035944A2 WO2010035944A2 (fr) 2010-04-01
WO2010035944A3 true WO2010035944A3 (fr) 2010-05-27

Family

ID=42056422

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/003773 WO2010035944A2 (fr) 2008-09-29 2009-07-09 Dispositif électroluminescent

Country Status (2)

Country Link
US (1) US20100078669A1 (fr)
WO (1) WO2010035944A2 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288785B2 (en) * 2008-12-03 2012-10-16 Seoul Semiconductor Co., Ltd. Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode
US8610156B2 (en) * 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
DE102010020211A1 (de) * 2010-05-10 2011-11-10 Osram Opto Semiconductors Gmbh Träger für ein optoelektronisches Bauelement, optoelektronische Vorrichtung mit einem Träger und Verfahren zur Herstellung eines Trägers für ein optoelektronisches Bauelement
DE102010023955A1 (de) * 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
TWM401871U (en) * 2010-09-14 2011-04-11 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
JP5338788B2 (ja) * 2010-11-10 2013-11-13 船井電機株式会社 レーザホルダ、及び、それを備えた光ピックアップ
US10267506B2 (en) 2010-11-22 2019-04-23 Cree, Inc. Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same
TW201250964A (en) 2011-01-27 2012-12-16 Dainippon Printing Co Ltd Resin-attached lead frame, method for manufacturing same, and lead frame
DE102011083691B4 (de) * 2011-09-29 2020-03-12 Osram Gmbh Optoelektronisches halbleiterbauteil
JP6078948B2 (ja) * 2012-01-20 2017-02-15 日亜化学工業株式会社 発光装置用パッケージ成形体及びそれを用いた発光装置
US9786825B2 (en) 2012-02-07 2017-10-10 Cree, Inc. Ceramic-based light emitting diode (LED) devices, components, and methods
US9806246B2 (en) 2012-02-07 2017-10-31 Cree, Inc. Ceramic-based light emitting diode (LED) devices, components, and methods
US8895998B2 (en) * 2012-03-30 2014-11-25 Cree, Inc. Ceramic-based light emitting diode (LED) devices, components and methods
US9538590B2 (en) 2012-03-30 2017-01-03 Cree, Inc. Solid state lighting apparatuses, systems, and related methods
USD738542S1 (en) 2013-04-19 2015-09-08 Cree, Inc. Light emitting unit
JP6232792B2 (ja) * 2013-07-17 2017-11-22 日亜化学工業株式会社 発光装置
US10811572B2 (en) * 2014-10-08 2020-10-20 Seoul Semiconductor Co., Ltd. Light emitting device
US9826581B2 (en) 2014-12-05 2017-11-21 Cree, Inc. Voltage configurable solid state lighting apparatuses, systems, and related methods
US9859481B2 (en) * 2014-12-22 2018-01-02 Nichia Corporation Light emitting device
US9590158B2 (en) 2014-12-22 2017-03-07 Nichia Corporation Light emitting device
US10626012B2 (en) * 2015-04-13 2020-04-21 Infineon Technologies Ag Semiconductor device including a cavity lid
JP6471641B2 (ja) * 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置の製造方法
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
CN108538877B (zh) * 2018-05-17 2020-09-01 深圳市华星光电技术有限公司 Micro LED显示面板的制作方法
KR102559294B1 (ko) * 2018-05-28 2023-07-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
JP7148792B2 (ja) * 2018-09-27 2022-10-06 日亜化学工業株式会社 光半導体装置用金属材料、及びその製造方法、及びそれを用いた光半導体装置
JP6675032B1 (ja) * 2019-07-08 2020-04-01 御田 護 半導体発光装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072158A (ja) * 2003-08-22 2005-03-17 Hitachi Aic Inc 発光素子用基板
JP2006269667A (ja) * 2005-03-23 2006-10-05 Sumitomo Electric Ind Ltd 光反射膜およびそれを用いた発光ダイオード用パッケージ
WO2006126809A1 (fr) * 2005-05-26 2006-11-30 Luxpia Co., Ltd. Tres petit boitier pour diode electroluminescente et son procede de fabrication
JP2007234818A (ja) * 2006-02-28 2007-09-13 Toshiba Lighting & Technology Corp 発光装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA875093A (en) * 1971-07-06 The Government Of The United States Of America As Represented By The Sec Retary Of The Army High efficiency stable reflecting surface
US4713824A (en) * 1983-02-11 1987-12-15 Allied Corporation Noble-metal overcoated, front-surface silver reflectors
US5139890A (en) * 1991-09-30 1992-08-18 Olin Corporation Silver-coated electrical components
US6544616B2 (en) * 2000-07-21 2003-04-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US6181226B1 (en) * 1999-11-05 2001-01-30 Siemens Energy & Automation, Inc. Bi-metal trip unit for a molded case circuit breaker
WO2001059851A1 (fr) * 2000-02-09 2001-08-16 Nippon Leiz Corporation Source lumineuse
US6797463B2 (en) * 2000-02-16 2004-09-28 Wisconsin Alumni Research Foundation Method and apparatus for detection of microscopic pathogens
JP4381574B2 (ja) * 2000-08-17 2009-12-09 日鉱金属株式会社 積層板用銅合金箔
US6949771B2 (en) * 2001-04-25 2005-09-27 Agilent Technologies, Inc. Light source
CN1326134C (zh) * 2002-06-28 2007-07-11 威廉斯高级材料公司 包含防腐银合金的光学数据存储器和可记录存储媒体
US7692277B2 (en) * 2003-01-16 2010-04-06 Panasonic Corporation Multilayered lead frame for a semiconductor light-emitting device
JP4830768B2 (ja) * 2006-05-10 2011-12-07 日亜化学工業株式会社 半導体発光装置及び半導体発光装置の製造方法
EP1928026A1 (fr) * 2006-11-30 2008-06-04 Toshiba Lighting & Technology Corporation Dispositif d'éclairage doté d'éléments luminescents semi-conducteurs
US20130174900A1 (en) * 2011-07-07 2013-07-11 Stion Corporation Nanowire enhanced transparent conductive oxide for thin film photovoltaic devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072158A (ja) * 2003-08-22 2005-03-17 Hitachi Aic Inc 発光素子用基板
JP2006269667A (ja) * 2005-03-23 2006-10-05 Sumitomo Electric Ind Ltd 光反射膜およびそれを用いた発光ダイオード用パッケージ
WO2006126809A1 (fr) * 2005-05-26 2006-11-30 Luxpia Co., Ltd. Tres petit boitier pour diode electroluminescente et son procede de fabrication
JP2007234818A (ja) * 2006-02-28 2007-09-13 Toshiba Lighting & Technology Corp 発光装置

Also Published As

Publication number Publication date
US20100078669A1 (en) 2010-04-01
WO2010035944A2 (fr) 2010-04-01

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