WO2010013886A3 - 고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조 방법 - Google Patents

고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조 방법 Download PDF

Info

Publication number
WO2010013886A3
WO2010013886A3 PCT/KR2009/002414 KR2009002414W WO2010013886A3 WO 2010013886 A3 WO2010013886 A3 WO 2010013886A3 KR 2009002414 W KR2009002414 W KR 2009002414W WO 2010013886 A3 WO2010013886 A3 WO 2010013886A3
Authority
WO
WIPO (PCT)
Prior art keywords
flash memory
cell
cell device
doped semiconductor
semiconductor region
Prior art date
Application number
PCT/KR2009/002414
Other languages
English (en)
French (fr)
Other versions
WO2010013886A9 (ko
WO2010013886A2 (ko
Inventor
이종호
Original Assignee
경북대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 경북대학교 산학협력단 filed Critical 경북대학교 산학협력단
Priority to US13/055,881 priority Critical patent/US8779501B2/en
Publication of WO2010013886A2 publication Critical patent/WO2010013886A2/ko
Publication of WO2010013886A3 publication Critical patent/WO2010013886A3/ko
Publication of WO2010013886A9 publication Critical patent/WO2010013886A9/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8616—Charge trapping diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 초고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조방법에 관한 것이다. 상기 셀 소자는 반도체 기판, 반도체 기판위에 형성된 제1 도우핑 반도체 영역, 상기 제1 도우핑 반도체 영역위에 형성된 제2 도우핑 반도체 영역; 상기 제2 도우핑 반도체 영역위에 순차적으로 형성되는 터널링 절연막, 전하 저장 노드, 컨트롤 절연막 및 제어 전극;을 구비한다. 상기 제1 및 제2 도우핑 반도체 영역은 서로 다른 반도체 유형으로 도핑된 것을 특징으로 한다. 상기 플래시 메모리 셀 스트링은 전술한 구조를 갖는 다수 개의 셀 소자가 일렬로 배열되어 형성되거나 상기 배열된 셀 소자들 및 셀 선택을 위한 스위칭 소자로 형성된다. 본 발명에 의하여 기존의 NOR나 NAND 플래시 메모리의 셀 소자의 축소화 특성과 성능을 크게 개선한다. 본 발명에 따른 셀 소자는 기존의 트랜지스터형 셀 소자와 달리 채널과 소스/드레인을 구비하지 않기 때문에 기존의 메모리에 비해 제조공정이 간단하고 cross-talk이나 read disturb와 같은 문제를 크게 개선한다.
PCT/KR2009/002414 2008-07-28 2009-05-08 고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조 방법 WO2010013886A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/055,881 US8779501B2 (en) 2008-07-28 2009-05-08 Diode-based flash memory device cell string and fabricating method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080073778A KR100973827B1 (ko) 2008-07-28 2008-07-28 고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조 방법
KR10-2008-0073778 2008-07-28

Publications (3)

Publication Number Publication Date
WO2010013886A2 WO2010013886A2 (ko) 2010-02-04
WO2010013886A3 true WO2010013886A3 (ko) 2010-03-25
WO2010013886A9 WO2010013886A9 (ko) 2010-05-20

Family

ID=41610808

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002414 WO2010013886A2 (ko) 2008-07-28 2009-05-08 고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조 방법

Country Status (3)

Country Link
US (1) US8779501B2 (ko)
KR (1) KR100973827B1 (ko)
WO (1) WO2010013886A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456637B (zh) * 2012-06-05 2016-01-06 中芯国际集成电路制造(上海)有限公司 SiGe源/漏区制造方法
KR20190026161A (ko) 2017-09-04 2019-03-13 유선상 거울 탈부착식 해바라기 샤워기

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040064339A (ko) * 2003-01-10 2004-07-19 삼성전자주식회사 전하저장절연막을 가지는 비휘발성 메모리 소자 및 그제조방법
KR100831390B1 (ko) * 2006-11-25 2008-05-21 경북대학교 산학협력단 고집적 플래시 메모리 소자 및 그 제조 방법
KR20080050654A (ko) * 2006-12-04 2008-06-10 경북대학교 산학협력단 고집적 플래시 메모리 셀 스트링，셀 소자，및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3200497B2 (ja) * 1993-03-19 2001-08-20 三菱電機株式会社 電気的に情報の書込および消去が可能な半導体記憶装置およびその製造方法
WO2000045437A1 (fr) * 1999-01-26 2000-08-03 Hitachi, Ltd. Procede de reglage de polarisation inverse de circuit mos, et circuit integre mos
US7648881B2 (en) 2003-01-10 2010-01-19 Samsung Electronics Co., Ltd. Non-volatile memory devices with charge storage insulators and methods of fabricating such devices
DE102004063025B4 (de) * 2004-07-27 2010-07-29 Hynix Semiconductor Inc., Icheon Speicherbauelement und Verfahren zur Herstellung desselben

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040064339A (ko) * 2003-01-10 2004-07-19 삼성전자주식회사 전하저장절연막을 가지는 비휘발성 메모리 소자 및 그제조방법
KR100831390B1 (ko) * 2006-11-25 2008-05-21 경북대학교 산학협력단 고집적 플래시 메모리 소자 및 그 제조 방법
KR20080050654A (ko) * 2006-12-04 2008-06-10 경북대학교 산학협력단 고집적 플래시 메모리 셀 스트링，셀 소자，및 그 제조방법

Also Published As

Publication number Publication date
WO2010013886A9 (ko) 2010-05-20
KR100973827B1 (ko) 2010-08-04
KR20100012410A (ko) 2010-02-08
WO2010013886A2 (ko) 2010-02-04
US8779501B2 (en) 2014-07-15
US20110254076A1 (en) 2011-10-20

Similar Documents

Publication Publication Date Title
TWI415250B (zh) 具有非晶態金屬氧化物半導體通道之剛性半導體記憶體
US9240420B2 (en) 3D non-volatile storage with wide band gap transistor decoder
US9397111B1 (en) Select gate transistor with single crystal silicon for three-dimensional memory
CN101834188B (zh) 非易失性存储器件及其制造方法
CN101971324B (zh) 具有到单个导电柱的一对存储器单元串的存储器阵列
KR101760658B1 (ko) 비휘발성 메모리 장치
US8460998B2 (en) Method of fabricating semiconductor device
US8395941B2 (en) Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same
CN101533803B (zh) 非易失性半导体存储装置的制造方法和非易失性半导体存储装置
US20150179661A1 (en) Vertical channel-type 3d semiconductor memory device and method for manufacturing the same
TW200719442A (en) Low hydrogen concentration charge-trapping layer structures for non-volatile memory and methods of forming the same
TW200629574A (en) Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
CN106486423B (zh) 半导体器件及其制造方法
JP2008270343A (ja) 不揮発性半導体記憶装置
TW201622111A (zh) 半導體裝置之製造方法
KR20110064551A (ko) 산화물 반도체 채널을 갖는 수직형 낸드 플래시 메모리 소자
TW200701236A (en) Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
CN106024889A (zh) 半导体器件及其制造方法
US8766365B2 (en) Circuit-protection devices
CN105742287B (zh) 存储器元件
WO2010013886A3 (ko) 고집적 플래시 메모리 셀 소자, 셀 스트링 및 그 제조 방법
CN1645596A (zh) 非易失半导体存储器件的制造方法
US20140103419A1 (en) Non-volatile memory device and method for forming the same
WO2012148092A3 (ko) 비휘발성 메모리 소자의 구동 방법
Shirota Developments in 3D-NAND Flash technology

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09803091

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13055881

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 09803091

Country of ref document: EP

Kind code of ref document: A2