WO2010013644A1 - Dispositif d'affichage électroluminescent organique et son procédé de fabrication - Google Patents

Dispositif d'affichage électroluminescent organique et son procédé de fabrication Download PDF

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Publication number
WO2010013644A1
WO2010013644A1 PCT/JP2009/063231 JP2009063231W WO2010013644A1 WO 2010013644 A1 WO2010013644 A1 WO 2010013644A1 JP 2009063231 W JP2009063231 W JP 2009063231W WO 2010013644 A1 WO2010013644 A1 WO 2010013644A1
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Prior art keywords
organic compound
layer
compound layer
electrode
light
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PCT/JP2009/063231
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English (en)
Inventor
Takehiko Soda
Yoshiyuki Nakagawa
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Canon Kabushiki Kaisha
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Publication of WO2010013644A1 publication Critical patent/WO2010013644A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to an organic EL display device and a method for manufacturing the same.
  • Examples of a multicolor organic EL display device structure in which organic compound layers and electrode layers alternately stacked include the multicolor organic light emitting device structure disclosed in U. S. Patent No. 5707745.
  • the multicolor organic light emitting device structure disclosed in U. S. Patent No. 5707745 has a configuration in which at least two light emitting device are stacked, and the respective light emitting device can individually be driven.
  • the multicolor organic light emitting device disclosed in U. S. Patent No. 5707745 requires the respective electrode layers to be patterned into desired shapes in order to selectively drive a plurality of organic light emitting device included in the device.
  • An object of the present invention is to provide an organic EL display device including a favorable organic compound layer that is not affected by burrs and/or residues occurring during formation of the underlying layer, and an organic EL display device manufacturing method enabling formation of such organic compound layer.
  • the present invention provides an organic EL display device comprising: a substrate; and a plurality of pixels arranged on the substrate, wherein each pixel includes a lower electrode provided on the substrate, a number of electrode layers provided above the lower electrode, the number being n, and a number of organic compound layers provided between the lower electrode and an electrode layer provided immediately above the lower electrode and between the electrode layers, the organic compound layers each including a light-emitting layer that emits predetermined light, the number being n; and wherein each organic compound layer has a thickness satisfying a relationship indicated by expression (1) below: dl ⁇ d2 ⁇ ... ⁇ dn (1)
  • dl is a thickness of a first organic compound layer
  • d2 is a thickness of a second organic compound layer
  • dn is a thickness of an n-th organic compound layer
  • the present invention enables provision of an organic EL display device including a favorable organic compound layer that is not affected by burrs and/or residues occurring during formation of the underlying layer, and an organic EL display device manufacturing method enabling formation of such organic compound layer. Accordingly, inter-electrode shorts can be reduced in regions in which an organic compound layer or an electrode layer has selectively been removed, enabling enhancement of the production yield of organic EL display devices.
  • FIG. IA is a schematic cross-sectional view of a portion of an organic EL display device manufactured with a manufacturing method according to the present invention, which corresponds to one pixel.
  • FIG. IB is a circuit diagram illustrating an equivalent circuit for the organic EL display device illustrated in FIG. IA.
  • FIGS. 2A, 2B, 2C, 2D, 2E, 2F and 2G are schematic cross-sectional diagrams illustrating an organic EL display device manufacturing method according to present invention.
  • a pixel which is a component of an organic EL display device according to the present invention, is a member including a lower electrode, electrode layers, and organic compound layers.
  • the lower electrode is provided above a substrate.
  • the electrode layers are provided above the lower electrode, and the number of the electrode layers is n.
  • the value of n is preferably 2 to 4 in consideration of, e.g., a voltage applied to the organic EL display device.
  • the organic compound layers are provided between the lower electrode and the electrode layer provided immediately above the lower electrode and between the electrode layers, and the number of the organic compound layers is n.
  • the organic compound layers each include a light-emitting layer that emits predetermined light.
  • the value of n is preferably 2 to 4 in consideration of, e.g., a voltage applied to the organic EL display device.
  • the organic EL display device according to the present invention is characterized in that each organic compound layer has a thickness satisfying the relationship indicated by expression (1) below, dl ⁇ d2 ⁇ ... ⁇ dn (1)
  • dl is the thickness of a first organic compound layer.
  • the first organic compound layer refers to an organic compound layer provided between the lower electrode and a first electrode layer provided immediately above the lower electrode.
  • d2 is the thickness of a second organic compound layer.
  • the second organic compound layer refers to an organic compound layer provided between the aforementioned first electrode layer and a second electrode layer provided immediately above the first electrode layer.
  • dn is the thickness of an n-th organic compound layer.
  • the n-th organic compound layer refers to an organic compound layer provided between an n-l-th electrode layer, which is the electrode layer provided as the second electrode layer from the top, and an n-th electrode layer (upper electrode) provided as the first electrode layer from the top.
  • the thickness of an organic compound layer is controlled so as to satisfy the relationship in expression (1).
  • the organic compound layer is formed so as to have a thickness larger than that of the underlying organic compound layers.
  • the light-emitting layer included in each organic compound layer satisfies the relationship indicated by expression (2) below. ⁇ l ⁇ ⁇ 2 ⁇ ... ⁇ ⁇ n (2)
  • ⁇ l is the peak wavelength of light emitted from a first light-emitting layer included in the first organic compound layer.
  • ⁇ 2 is the peak wavelength of light emitted from a second light-emitting layer included in the second organic compound layer.
  • ⁇ n is the peak wavelength of light emitted from an n-th light-emitting layer included in the n-th organic compound layer.
  • organic compound layers are formed so that the light-emitting layer included in each organic compound layer satisfies the relationship indicated by expression (2) above.
  • expression (2) preferably, adjustment is made so that the peak wavelength of light emitted from the light-emitting layer included in an organic compound layer is shifted to the longer wavelength side relative to the peak wavelength of light emitted from the light-emitting layer of the underlying organic compound layer.
  • FIGS. IA and IB are schematic diagrams of an organic EL display device manufactured with a manufacturing method according to the present invention.
  • FIG. IA is a cross-sectional view of a portion of an organic EL display device corresponding to one pixel
  • FIG. IB is a circuit diagram of an equivalent circuit for the organic EL display device illustrated in FIG. IA.
  • IA is a top emission-type organic EL display device. Also, the organic EL display device illustrated in FIG. IA includes a first sub pixel Pl, a second sub pixel P2 and a third sub pixel P3 arranged in parallel, and these three sub pixels Pl, P2 and P3 constitute one pixel.
  • organic compound layers which emit light in different colors, are formed between a lower electrode and an electrode layer, and between electrode layers.
  • a lower electrode 11a, a first organic compound layer 12a, a first electrode layer 13a, a second organic compound layer 14a, a second electrode layer 15a, a third organic compound layer l ⁇ a and a third electrode layer 21 are stacked on a substrate 10 in this order.
  • a contact hole 20a is provided, allowing the first electrode layer
  • the first sub pixel Pl forms an equivalent circuit A, which is illustrated in FIG. IB, and upon application of a desired voltage, the first organic compound layer 13a emits light.
  • a lower electrode lib In the second sub pixel P2, a lower electrode lib, a first organic compound layer 12b, a first electrode layer 13b, a second organic compound layer 14b, a second electrode layer 15b, a third organic compound layer 16b and a third electrode layer 21 are stacked on the substrate 10 in this order.
  • contact holes 18b and 20b are provided in the vicinity of the second sub pixel P2.
  • the contact hole 18b allows the lower electrode lib and the first electrode layer 13b to be directly electrically connected.
  • the contact hole 20b allows the second electrode layer 15b and the third electrode layer 21 to be directly electrically connected.
  • the second sub pixel P2 forms an equivalent circuit B, which is illustrated in FIG. IB, and upon application of a desired voltage, the second organic compound layer 14b emits light.
  • a lower electrode lie, a first organic compound layer 12c, a first electrode layer 13c, a second organic compound layer 14c, a second electrode layer 15c, a third organic compound layer 16c and a third electrode layer 21 are stacked on the substrate 10 in this order.
  • a contact hole 19c is provided, allowing the lower electrode layer lie, the first electrode layer 13c and the second electrode layer to be directly electrically connected.
  • the third sub pixel P3 forms an equivalent circuit C, which is illustrated in FIG. IB, and upon application of a desired voltage, the third organic compound layer 16c emits light.
  • Each of the organic compound layers (12a to 12c, 14a to 14c and 16a to 16c) illustrated in FIG. IA is a single- layer thin film or a stack of two or more layers, which at least includes a light-emitting layer.
  • the organic compound layer includes any of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc., in addition to a light- emitting layer.
  • switching elements such as TFTs formed on an insulating substrate may be used. These switching elements are to be electrically connected to the lower electrodes 11a to lie.
  • FIGS. 2A to 2G are cross-sectional diagrams illustrating an organic EL display device manufacturing method according to the present invention.
  • first, lower electrodes 11a to lie are formed in desired shapes on a substrate 10 by means of patterning.
  • the substrate 10 used in the present embodiment is preferably an insulating substrate, and may be, for example, a glass substrate.
  • a single metal such as Cr, Al or Ag, and a transparent conductive compound such as ITO or IZO may be used.
  • Each of the lower electrodes 11a to lie may be a stack of a thin film including any of the aforementioned single metals, and a thin film including any of the aforementioned transparent conductive compounds.
  • the method of patterning a metal film or a transparent conductive compound film, which has been formed using a sputtering method or a vacuum deposition method, using a photolithography method may be employed.
  • a first organic compound layer 12 which is provided in common to the plurality of sub pixels, is formed so as to cover the lower electrodes 11a to lie (FIG. 2A) .
  • this first organic compound layer 12 When forming this first organic compound layer 12, it is preferable that its thickness (dl) is small. As a result of forming the first organic compound layer 12 so as to have a smaller thickness, when forming contact holes 18b and 18c in the next process, burrs and residues occurring at the edge portions of the formed contact holes 18b and 18c can be reduced.
  • the thickness dl refers to the thickness of the first organic compound layer provided between the lower electrode and the first electrode layer.
  • the first organic compound layer 12 includes, for example, three layers, i.e., an electron transport layer, a light-emitting layer and a hole transport layer, but the first organic compound layer 12 according to the present invention is not limited to this example.
  • an electron injection/transport material for the electron transport layer e.g., Alq3 which is prepared by coordinating the trimer of 8-hydroxyquinoline to an aluminum atom
  • an azomethine zinc complex e.g., a distyrylbiphenyl derivative can be used.
  • a light-emitting material for forming the light- emitting layer can arbitrarily selected according to the color of light to be emitted or the wavelength of the light, For example, a triarylamine derivative, a stilbene derivative, a polyarylene, a condensed polycyclic aromatic compound, a heterocyclic aromatic compound, a condensed heterocyclic aromatic compound, and a metal complex compound, or a single or complex oligomer thereof can be used.
  • a hole injection/transport material for forming the hole transport layer e.g., a phthalocyanine compound, a triarylamine compound, a conductive polymer, a perylene compound or an Eu complex can be used.
  • a vacuum deposition method, a coating method, etc. can be used for a method for forming the first organic compound layer 12.
  • the regions of the first organic compound layer in which contact holes are to be formed are selectively removed to form contact holes 18b and 18c (FIG. 2B) .
  • the regions of the first organic compound layer are also selectively removed in which contact holes 19a (20a) and 20b, which will be described later, are to be formed.
  • contact holes 19a (20a) and 20b which will be described later, are to be formed.
  • a laser ablation method is preferable for a method for selectively removing the first organic compound layer.
  • the laser ablation method include the methods of irradiation with a YAG laser, an excimer laser, etc., but are not limited to these methods as long as the examples can selectively and favorably remove the first organic compound layer.
  • an excimer laser with a wavelength of 248 nm is used.
  • a method for selectively removing the first organic compound layer specifically, e.g., the method of scanning with a laser condensed into several micrometers or the method of irradiating only a desired region with a laser using a mask prepared by patterning a light-shielding film can be employed.
  • first organic compound layer 12 and the contact holes 18b and 18c vacuum deposition using a metal mask or patterning by means of selective coating using ink jet, etc., can be employed.
  • a thin film corresponding to the first electrode layer is formed on the first organic compound layers 12a to 12c and then patterned to form first electrode layers 13a to 13c, which are separated so as to form a desired pattern (FIG. 2C) .
  • the lower electrode lib and the first electrode layer 13b are electrically connected via the contact hole 18b.
  • the lower electrode lie and the first electrode layer 13c are electrically connected via the contact hole 18c.
  • the first electrode layer 13a is formed in a region covering the first organic compound layer 12a.
  • the first electrode layer 13b is formed in a region covering the first organic compound layer 12b.
  • the first electrode layer 13c is formed in a region covering the first organic compound layer 12c .
  • the first electrode layers 13a to 13c be transparent electrodes including, e.g., ITO or IZO.
  • the first electrode layers 13a to 13c may be, e.g., semi-transmissive Al thin films or Ag thin films having a thickness of 10 to 30 nm.
  • a method for forming the first electrode layers 13a to 13c a method similar to the method for the lower electrodes 11a to lie, that is, the method of patterning a metal film or a transparent conductive compound film, which has been formed using a sputtering method or a vacuum deposition method, using a photolithography method may be employed.
  • a second organic compound layer 14 is formed (FIG. 2C) .
  • the thickness (d2) of the second organic compound layer 14 is made to be larger than the thickness dl of the first organic compound layer 12.
  • a thin film corresponding to the second organic compound layer 14 can favorably be formed even on the first electrode layer 13b formed on the contact hole 18b.
  • the thickness d2 refers to the thickness of the second organic compound layer provided between the first electrode layer and a second electrode layer.
  • the second organic compound layer 14 includes, for example, three layers, i.e., an electron transport layer, a light-emitting layer and a hole transport layer, but the second organic compound layer 14 according to the present invention is not limited to this example. Also, for constituent materials for the second organic compound layer 14, materials similar to those for the first organic compound layer 12 can be used.
  • a vacuum deposition method, a coating method, etc. can be used as in the case of the first organic compound layer 12.
  • the regions of the second organic compound layer in which contact holes are to be formed are selectively removed to form contact holes 19a and 19c (FIG. 2D) .
  • the region of the second organic compound layer is also selectively removed in which a contact hole 20b, which will be described later, is to be formed.
  • separated second organic compound layers 14a to 14c are formed.
  • a thin film corresponding to the second electrode layer is formed on the second organic compound layers 14a to 14c and then patterned to form second electrode layers 15a to 15c, which are separated so as to form a desired pattern (FIG. 2E) .
  • the first electrode layer 13a and the second electrode layer 15a are electrically connected via the contact hole 19a.
  • the lower electrode lie, the first electrode layer 13c and the second electrode layer 15c are electrically connected via the contact hole 19c.
  • the second electrode layer 15a is formed in a region covering the second organic compound layer 14a.
  • the second electrode layer 15b is formed in a region covering the second organic compound layer 14b.
  • the second electrode layer 15c is formed in a region covering the second organic compound layer 14c.
  • the second electrode layers 15a to 15c be transparent electrodes including, e.g., ITO or IZO.
  • the second electrode layers 15a to 15c may be, e.g., semi-transmissive Al thin films or Ag thin films having a thickness of 10 to 30 nm.
  • a method for forming the second electrode layers 15a to 15c a method similar to the method for the lower electrodes 11a to lie, that is, the method of patterning a metal film or a transparent conductive compound film, which has been formed using a sputtering method or a vacuum deposition method, using a photolithography method may be employed.
  • a third organic compound layer 16 is formed (FIG. 2E).
  • the thickness (d3) of the second organic compound layer 16 is made to be larger than the thickness d2 of the second organic compound layer 14.
  • a thin film corresponding to the second organic compound layer 14 can favorably be formed even on the second electrode layer 15c formed on the contact hole 19c.
  • shorts occurring between the second electrode layer 15c and a third electrode layer 21, which will be described later, can be reduced.
  • the thickness of the third organic compound layer 16 is only necessary that the thickness of the third organic compound layer 16 be made to be larger than the thickness of the second organic compound layer 14, enabling formation of a film efficiently coating the second electrode layers 15a to 15c.
  • the thickness d3 refers to the thickness of the third organic compound layer provided between the second electrode layer and a third electrode layer.
  • the third organic compound layer 16 includes, for example, three layers, i.e., an electron transport layer, a light-emitting layer and a hole transport layer, but the third organic compound layer 16 according to the present invention is not limited to this example. Also, for constituent materials for the third organic compound layer 16, materials similar to those for the first organic compound layer 12 can be used.
  • a vacuum deposition method, a coating method, etc. can be used as in the case of the first organic compound layer 12.
  • a third electrode layer 21 is formed on the third organic compound layers 16a to 16c (FIG. 2G) .
  • the first electrode layer 13a, the second electrode layer 15a and the third electrode layer 21 are electrically connected via the contact hole 20a.
  • the second electrode layer 15b and the third electrode layer 21 are electrically connected via the contact hole 20b.
  • the third electrode layer 21 be a transparent electrode including, e.g., ITO or IZO.
  • the third electrode layer may be, e.g., a semi- transmissive Al thin film or Ag thin film having a thickness of 10 to 30 nm.
  • a sputtering method, a vacuum deposition method, etc. may be employed.
  • An organic EL display device manufactured by the method described above enables favorable formation of organic compound layers over regions in which an organic compound layer or an electrode layer has selectively been removed. Accordingly, inter-electrode shorts, which may occur in the regions in which an organic compound layer or an electrode layer has selectively been removed, can be reduced, enabling enhancement of the production yield of organic EL display devices. (Second Embodiment)
  • an organic EL display device preferably, adjustment is made so that the emission peak wavelength of the light-emitting layer included in an organic compound layer is shifted to the longer wavelength side relative to the emission peak wavelength of the light-emitting layer included in the underlying organic compound layer.
  • the emission spectrum of the second light-emitting layer included in the second organic compound layer (14a to 14c) is in a range of wavelengths longer than the emission spectrum of the first light-emitting layer included in the first organic compound layer (12a to 12c).
  • the emission spectrum of the third light-emitting layer included in the third organic compound layer (16a to 16c) is in a range of wavelengths longer than the emission spectrum of the second light-emitting layer included in the second organic compound layer (14a to 14c) . More specifically, for example, in the organic EL display device illustrated in FIG.
  • the first light- emitting layer included in the first organic compound layer (12a to 12c) is made to be a blue light-emitting layer.
  • the second light-emitting layer included in the second organic compound layer (14a to 14c) is made to be a green light-emitting layer, and the third light-emitting layer of the third organic compound layer (16a to 16c) is made to be a red light-emitting layer. Consequently, light with a high color purity using an optical resonator structure can be provided, enabling further enhancement of the display quality of organic EL display devices.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention porte sur un dispositif d'affichage électroluminescent organique comprenant une couche de composé organique non affectée par les bavures et/ou les résidus produits pendant la formation de la couche sous-jacente ainsi que sur un procédé de fabrication d'une telle couche. Le dispositif d'affichage électroluminescent organique comprend un substrat et une pluralité de pixels agencés sur le substrat. Chaque pixel comprend une électrode inférieure disposée sur le substrat ; un nombre n de couches d'électrodes formées sur l'électrode inférieure ; et un nombre n de couches de composés organiques disposées entre l'électrode inférieure et une couche d'électrodes ainsi qu’entre les couches d'électrodes et comprenant une couche d'émission de lumière qui émet une lumière prédéterminée. L’épaisseur de chaque couche de composé organique satisfait l'expression (1) : d1 < d2 < ... < dn (1) (d1 : épaisseur d'une première couche de composé organique, d2 : épaisseur d'une deuxième couche de composé organique, dn : épaisseur d'une n-ième couche de composé organique).
PCT/JP2009/063231 2008-07-31 2009-07-16 Dispositif d'affichage électroluminescent organique et son procédé de fabrication WO2010013644A1 (fr)

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JP2008197191A JP2010033983A (ja) 2008-07-31 2008-07-31 有機ｅｌ表示装置及びその製造方法
JP2008-197191 2008-07-31

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Cited By (2)

* Cited by examiner, † Cited by third party
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CN104716264A (zh) * 2013-12-11 2015-06-17 昆山工研院新型平板显示技术中心有限公司 一种有机电致发光器件及应用该发光器件的显示装置
CN111244130A (zh) * 2018-11-28 2020-06-05 乐金显示有限公司 显示装置

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JPH09199276A (ja) * 1996-01-17 1997-07-31 Nec Corp 有機薄膜ｅｌ素子
JPH11312584A (ja) * 1998-04-28 1999-11-09 Tdk Corp 有機ｅｌ素子
WO2004068911A1 (fr) * 2003-01-29 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. Dispositif électroluminescent
JP2005100928A (ja) * 2003-09-23 2005-04-14 Samsung Sdi Co Ltd アクティブマトリクス有機電界発光表示装置

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH09199276A (ja) * 1996-01-17 1997-07-31 Nec Corp 有機薄膜ｅｌ素子
JPH11312584A (ja) * 1998-04-28 1999-11-09 Tdk Corp 有機ｅｌ素子
WO2004068911A1 (fr) * 2003-01-29 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. Dispositif électroluminescent
JP2005100928A (ja) * 2003-09-23 2005-04-14 Samsung Sdi Co Ltd アクティブマトリクス有機電界発光表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104716264A (zh) * 2013-12-11 2015-06-17 昆山工研院新型平板显示技术中心有限公司 一种有机电致发光器件及应用该发光器件的显示装置
CN111244130A (zh) * 2018-11-28 2020-06-05 乐金显示有限公司 显示装置
US11114467B2 (en) * 2018-11-28 2021-09-07 Lg Display Co., Ltd. Display device
CN111244130B (zh) * 2018-11-28 2023-11-24 乐金显示有限公司 显示装置

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