Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Definitions

• the arrangement according to the invention diversifies the possibilities for implementing waveguide systems.
• the connection geometry of the waveguides 11 - 13 can be freer relative to each other.
• the separating capacity of the switch 20 also improves.
• the channelling probabilities of the electron flows have clearly a greater separating capacity from each other than, for example, in the Y-branch / chamber / right angle solutions according to the prior art.
• both of the output channels are straight- line continuations of the input channel.
• the channelling of the electron flow to the correct / desired output channel is more challenging than in the arrangement according to the invention.
• the electron flows E 2 , 25 E 3 , reflected and scattered before the gate element 15 from the main electron flow E brought by the input channel 11 to the branch 20 may cause drawbacks / disturbances to the functioning of the overall system (i.e. to the "signal" of the main electron flow E 1 ) .
• the 35 structure 16 improves the efficiency of the waveguide switch 20.
• Figures 4 - 6 show one example of such a restrictor structure 16, a protector grid or "screen”.
• the source of the electron flow E brought by the input channel 11 to the branch 20 is of no significance.
• the electron flow E can originate from any source whatever.
• the input channel 11 can be at the opposite end relative to the branch 20, in connection with an operational part / totality preceding the waveguide system.
• Figure 6 shows yet another embodiment of the invention. It shows another way to create "monoenergetic" electron waves with a suitable energy.
• a quantum resonator 19 or similar formed in the input channel 11 by two local narrowings 18.1, 18.2. More generally, this can also be referred to as an electron monochromator .
• the resonator 19 is tuned to the value Ka according to the setting, in such a way that the ratio (T cl L (W) / T op L (W)) of the migration probabilities of the electrons is maximal.
• the optimum values of the value Ka are in the region of 4,8. In this case, the ratio of the currents (J c i/J op ) can rise to a value of 7,5 - 9.
• Figure 7 shows a cross-sectional side view of one embodiment of the structure of a switch 14 according to the invention while Figure 8 shows a simplified top view of the embodiment shown in Figure 7.
• the switch 14 can be produced, for example, by some modulation doping standard technique. Such a technique is, as such, known, for example, from the manufacture of high- electron-mobility transistors.
• the arrangement according to the invention is a switch implemented at nano scale.
• One example of the dimensions a, b of the waveguides 11 - 13 are 5 - 500 nm, for example 10 - 300 nm, and more particularly 10 - 100 nm.
• the arrangement according to the invention is very fast in operation. Particularly the number of electron collisions appearing in it is minuscule compared to solutions according to the prior art, for example. Due to the geometry of the arrangement, no thermal ohmic radiation appear in the migration area of the electrons. In addition, several waveguides can be very close to each other.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Nanotechnology (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Chemical & Material Sciences (AREA)
• Computer Hardware Design (AREA)
• Crystallography & Structural Chemistry (AREA)
• Theoretical Computer Science (AREA)
• Mathematical Physics (AREA)
• Junction Field-Effect Transistors (AREA)

Applications Claiming Priority (2)

Publications (1)

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Citations (4)

• 2008
  • 2008-06-23 FI FI20085629A patent/FI122219B/fi not_active IP Right Cessation
• 2009
  • 2009-06-18 WO PCT/FI2009/050542 patent/WO2010007207A1/en active Application Filing

Patent Citations (4)

Non-Patent Citations (1)

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